Abstract: [Problem] To improve productivity of guest-free silicon clathrates [Solution] A method of producing a guest-free silicon clathrate includes a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound; and a guest removing step of irradiating the silicon clathrate compound contained in a container with an electromagnetic wave to remove the guest while suctioning gas inside the container.

Abstract: A device including a chamber and a nozzle detachably connected to the chamber, the nozzle defining an aperture, a target carousel disposed within the chamber, a first laser configured to generate a first beam directed toward the target carousel to perform in-situ ablation to form a laser plume, a gas flow system configured to supply gas into the chamber, such that the gas interacts with the laser plume and causes condensation and formation of nanoparticles, and a second laser configured to generate a second beam directed through the interior of the chamber, through the aperture of the nozzle, and toward a substrate disposed outside the device, the second laser beam configured to sinter and crystalize on the substrate the nanoparticles exiting the nozzle.

Abstract: A method for the continuous vapour deposition of silicon on substrates, including the following steps: a) introducing at least one substrate into a reaction chamber; b) introducing a process gas and at least one gaseous silicon precursor compound into the reaction chamber; c) forming a gaseous mixture of at least one silicon-based intermediate product coexisting with the gaseous silicon precursor compound and the process gas; d) forming a silicon layer by vapour deposition of silicon from the gaseous silicon precursor compound and/or the silicon-based intermediate product on the substrate; e) discharging an excess of the gaseous mixture from the reaction chamber; f) returning at least one of the constituents of the excess of the gaseous mixture, selected from the silicon precursor compound, the silicon-based intermediate product and/or the process gas into the reaction chamber, wherein introducing the gaseous silicon precursor compound into the reaction chamber is regulated such that the molar ratio of the si

Abstract: A method for preparing an amorphous silicon powder for an anode material of a lithium-ion battery is disclosed. The amorphous silicon powder is prepared by reducing an oxide of silicon, wherein an X-ray diffraction peak of an amorphous silicon material is weak, and the amorphous silicon material is of an amorphous structure. A structural formula of the oxide of silicon is SiOx, wherein 0<x?2. The reduction refers to vapor phase reduction, a vapor phase reduction atmosphere is a mixed gas of hydrogen and carbon monoxide, a reduction temperature ranges from 100° C. to 700° C., and a reduction time ranges from 2 h to 72 h.

Abstract: A system and a method for producing silicon from a SiO2-containing material that includes solid SiO2. The method uses a reaction vessel including a first section and a second section in fluid communication with said first section. The method includes: heating the SiO2-containing material that includes the solid SiO2 to a SiO2-containing material that includes liquid SiO2, at a sufficient temperature to convert the solid SiO2 into the liquid SiO2; converting, in the first section, the liquid SiO2 into gaseous SiO2 that flows to the second section by reducing the pressure in the reaction vessel to a subatmospheric pressure; and reducing, in the second section, the gaseous SiO2 into liquid silicon using a reducing gas. The reducing of the pressure is performed over a continuous range of interim pressure(s) sufficient to evaporate contaminants from the SiO2-containing material, and removing by vacuum, the one or more evaporated gaseous contaminants.

Abstract: An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.

Abstract: A manufacturing system and method for recycling and smelting crushed silica from silicon plants, including a crushed silica storage device, granulator, submerged arc furnace, transfer device, forming device and cooling system. Firstly silicon waste is collected, then crushed silica is output to a granulator. The granulator mixes the waste irregular crushed silica with water, and granulates and produces small particles having an uniform grain size as the raw material for smelting. The raw material is smelted in the submerged arc furnace. The forming device evenly pours the silicon liquid into the cooling system according to a set flow rate. The silicon liquid is solidified to form silicon pellets, and then a lift system is used to lift the formed silicon pellets, wherein the silicon liquid poured into the cooling system has a uniform diameter. The system can rapidly and efficiently smelt the silicon waste from the silicon plants.

Abstract: Exemplary methods provide for recovery of valuable industrial metals in connection with recycling of silicon solar cells and modules. Silicon, copper, silver, and the like may be recovered separately, allowing for cost-effective recycling for silicon solar cells and modules.

Abstract: A process for the preparation of nanofilament particles of SiOx in which x is between 0.8 and 1.2, the process comprising: a step consisting of a fusion reaction between silica (SiO2) and silicon (Si), at a temperature of at least about 1410° C., to produce gaseous silicon monoxide (SiO); and a step consisting of condensation of the gaseous SiO to produce the SiOx nanofilament particles. The process may also comprising using carbon.

Abstract: The invention relates generally to heaters and methods of using the heaters. In certain embodiments, a heater includes a pressure shell having a cylindrical heating cavity, an annular heat shield disposed within the cylindrical heating cavity, and at least one heating element disposed within an interior volume of the annular heat shield. In another embodiment, a method of preparing a trichlorosilane includes introducing a reactant stream comprising silicon tetrachloride into a heater, passing electrical current through a heating element to heat the reactant stream, and introducing the heated reactant stream into a reactor.

Abstract: Provided are a silicon oxide-carbon composite and a method of manufacturing the same. More particularly, the present invention provides a method of manufacturing a silicon oxide-carbon composite including mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, reacting the mixture of silicon and silicon dioxide in a reducing atmosphere, and coating a surface of silicon oxide manufactured by the reaction with carbon, and a silicon oxide-carbon composite manufactured thereby.

Abstract: A method and apparatus for producing titanium metal powder from a melt. The apparatus includes an atomization chamber having an inner wall that is coated with or formed entirely of CP-Ti to prevent contamination of titanium metal powder therein. The inner surfaces of all components of the apparatus in a flow path following the atomization chamber may also be coated with or formed entirely of CP-Ti.

Abstract: A method of making mesoporous silicon from silica, the mesoporous silicon obtained by the method, and uses of the mesoporous silicon are described. The mesoporous silicon may be derived from plants, particularly land-based plants.

Abstract: A method that includes: (a) forming a molten liquid from a solvent metal, silicon, and an alkali magnesium halide; (b) cooling the molten liquid to provide silicon crystals and a mother liquor; and (c) separating the silicon crystals from the mother liquor.

Abstract: The present invention relates to a method for manufacturing polysilicon. According to the present invention, meltdown can be prevented during the growth of silicon rod, and a polycrystalline silicon rod having a larger diameter can be shortly manufactured with a minimal consumption of energy.

Abstract: A titanium metal production apparatus is provided with (a) a first flow channel that supplies magnesium in a state of gas, (b) a second flow channel that supplies titanium tetrachloride in a state of gas, (c) a gas mixing section in which the magnesium and titanium tetrachloride in a state of gas are mixed and the temperature is controlled to be 1600° C. or more, (d) a titanium metal deposition section in which particles for deposition are arranged so as to be movable, the temperature is in the range of 715 to 1500° C., and the absolute pressure is 50 kPa to 500 kPa, and (e) a mixed gas discharge section which is in communication with the titanium metal deposition section.

Abstract: Porous, amorphous lithium storage materials and a method for making these materials are disclosed herein. In an example of the method, composite particles of a lithium storage material in an amorphous phase and a material that is immiscible with the lithium storage material are prepared. Phase separation is induced within the composite particles to precipitate out the amorphous phase lithium storage material and form phase separated composite particles. The immiscible material is chemically etched from the phase separated composite particles to form porous, amorphous lithium storage material particles.

Abstract: A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod.

Abstract: A method and apparatus for the production of nano-sized silicon particles via a low-temperature chemical solid-liquid reaction between a silicon-containing compound and a reducing agent. Embodiments of the present invention provide a production method that is cost-effective, while producing elemental silicon having purity, particle sizes, and stability suitable for energetics applications including solid propulsion additives, igniters, flares, decoys, and liquid fuel catalysts.

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract: The method for producing silicon metal and porous carbon from rice hulls is provided. The method comprises a first step S1 of producing a rice hull charcoal M2 containing SiO2 and C by heat treatment of rice hulls M1; a second step S4 of exposing the rice hull charcoal M4 to at least any one of heated first inert gas G2 or reducing gas to produce SiC; a third step S5 of exposing SiC to a heating atmosphere containing Cl2 gas to produce SiCl4 and porous carbon P1; a fourth step S7 of reacting SiCl4 and Zn to produce silicon metal P2 and ZnCl2; and a fifth step S9 of electrolyzing ZnCl2 to produce Zn and Cl2 gas. The Cl2 gas in the fifth step S9 is used in the third step S5, and Zn in the fifth step S9 is used in the fourth step S7.

Abstract: There is provided a hydrogen chrolide gas ejecting nozzle 1 used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends.

Abstract: The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.

Abstract: We provide a mesoporous silicon material (PSi) prepared via a template-free and HF-free process. The production process is facile and scalable, and it may be conducted under mild reaction conditions. The silicon may be produced directly by the reduction of a silicon-halogenide precursor (for example, SiCl4) with an alkaline alloy (for example, NaK alloy). The resulting Si-salt matrix is then annealed for the pore formation and crystallite growth. Final product is obtained by removal of the salt by-products with water.

Abstract: A method for producing silicon fine particles of the present invention comprises: a step A of heating a precursor obtained by drying a mixture containing a silicon source and a carbon source by using a heating means in an inert atmosphere in a part formed by non-carbon substances 20, a step B of rapidly cooling a gas generated by heating the precursor in the inert atmosphere in the part formed by non-carbon substances 20, wherein at least one of the silicon source and the carbon source is liquid form.

Abstract: A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al.

Abstract: The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.

Abstract: The present invention relates to a method of preparing a porous silicon-based negative electrode active material comprising: mixing a porous silica (SiO2) and an aluminum powder; oxidizing all or part of the aluminum powder as an aluminum oxide while at the same time reducing all or part of the porous silica as a porous silicon (Si) by heat-treating a mixture of the porous silica with the aluminum powder, a negative electrode active material, and a rechargeable lithium battery including the same.

Abstract: There is provided a silicon production method which comprises producing semiconductor grade silicon while producing solar grade silicon by converting a portion of trichlorosilane into silicon for solar cells. There is also provided an industrially advantageous method that removes contaminants from a chlorosilane circulating system which produces trichlorosilane in producing silicon from trichlorosilane by a vapor deposition method.

Abstract: Methods of converting silica to silicon and fabricating silicon photonic crystal fiber (PCF) are disclosed. Silicon photonic crystal fibers made by the fabrication methods are also disclosed. One fabrication method includes: sealing silica PCF and a quantity of magnesium within a container, the quantity of magnesium defined by 2Mg(g)+SiO2(s)->2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid. Another fabrication method includes: adding silica PCF and a quantity of solid magnesium to an unsealed container, the quantity of magnesium substantially in excess of that defined by 2Mg(g)+SiO2(s)->2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid.

Abstract: Silicon based anode active materials are described for use in lithium ion batteries. The silicon based materials are generally composites of nanoscale elemental silicon with stabilizing components that can comprise, for example, silicon oxide-carbon matrix material, inert metal coatings or combinations thereof. High surface area morphology can further contribute to the material stability when cycled in a lithium based battery. In general, the material synthesis involves a significant solution based processing step that can be designed to yield desired material properties as well as providing convenient and scalable processing.

Abstract: A method for determining the efficiency of a chemical conversion within a gas decomposition reactor having an inlet and an exhaust outlet is disclosed. The method includes measuring a chemical composition of an exhaust gas located within the exhaust outlet using Raman spectra. The measured chemical composition is compared to a set of values. A flow of an inlet gas through the inlet is adjusted to change a subsequently measured chemical composition of a subsequent exhaust gas located within the gas outlet.

Abstract: The present application includes a method of preparing silicon nanocrystals (Si-NCs) comprising combining silica particles with magnesium and heating said combination under conditions to form Si-NCs, wherein the silica particles are obtained using sol gel chemistry.

Abstract: The silicon purification method uses a silicon purification device including at least a crucible for loading a silicon metal and a plasma torch, and purifies the silicon metal by injecting a plasma gas from the plasma torch toward a melt surface of the silicon metal loaded in the crucible in a state where an angle formed by the melt surface and the plasma gas is set in the range of 20° to 80°.

Abstract: A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.

Abstract: The present invention relates generally to production of a fluoride gas and equivalents thereof, and fluorine-doped sodium silicate glass, glass ceramics, vitro ceramics and equivalents thereof. In one embodiment, the method includes providing a salt and an oxide in a reactor, heating the reactor to produce a vapor and the vitro ceramic and removing the vapor.

Abstract: Solid silicon is deposited onto electrically heated deposition plates by the reduction reaction of gaseous trichlorosilane and hydrogen which are mixed and pumped across the surfaces of the plates. The plates can have a number of high-surface area geometries such as concentric cylinders, spirals, or repeating S-shapes. Once the desired amount of silicon has been deposited, the deposition plates are heated to above the melting point of silicon causing the deposited silicon to slide off the plates in the form of a crust due to gravitational force. The plates are left coated with a thin film of liquid silicon which contains any impurities leached from the plates. This film is melted off separately from the main silicon crust to avoid contamination of the latter and the plates are then ready for the next deposition cycle.

Abstract: The invention relates to a process for deposition of polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen into a reactor, as a result of which polycrystalline silicon is deposited in the form of rods, which includes passing into the reactor, after the deposition has ended, a gas which attacks silicon or silicon compounds which flows around the polycrystalline rods and an inner reactor wall in order to dissolve silicon-containing particles which are formed in the course of deposition and adhere on the inner reactor wall or on the polycrystalline silicon rods before the polycrystalline silicon rods are removed from the reactor.

Abstract: A method of making mesoporous silicon from silica, the mesoporous silicon obtained by the method, and uses of the mesoporous silicon are described. The mesoporous silicon may be derived from plants, particularly land-based plants.

Abstract: A method of manufacture is described that uses liquid phase reduction of silicon hydride, to produce silicon metal. Working in liquid phase permits a more compact plant design and offers significantly lower capital costs.

Abstract: In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.

Abstract: Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.

Abstract: An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C.

Abstract: The present invention is for the recovery of maximum silicon value of kerf silicon waste, produced during the manufacture of silicon wafers by wire saw, diamond saw and chemical mechanical polishing, as high purity metallurgical silicon. This recovery is achieved by a process scheme that effects an initial removal of minor extrinsic metallic impurities but not the major silicon compound impurities, and followed, preferentially, by a direct metallurgical process to form elemental silicon. The recovered silicon is for use as feedstock for polysilicon manufacturing, as high purity polysilicon for PV application, and in metallurgical alloy manufacture.

Abstract: The present invention relates to a method of purifying a material using a metallic solvent. The present invention includes a method of purifying silicon utilizing a cascade process. In a cascade process, as the silicon moves through the purification process, it contacts increasingly pure solvent metal that is moving through the process in an opposite direction.

Abstract: A method for preparation of high purity silicon suitable for photovoltaic cells using reduction of silica, which is pre-purified in an aqueous solution, in presence of a reducing agent, preferably carbonaceous agent, where the pre-purified silica has a low amount of boron suitable for photovoltaic cells is described.

Abstract: Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.

Abstract: The present invention relates to a method of purifying a material using a metallic solvent. The present invention includes a method of purifying silicon utilizing a cascade process. In a cascade process, as the silicon moves through the purification process, it contacts increasingly pure solvent metal that is moving through the process in an opposite direction.

Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.

Abstract: A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m2/g to about 200 m2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm2 to about 3.5 mg/cm2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.