Abstract: Metallurgical silicon containing impurities of carbon and/or carbon-containing compounds is classified and subsequently used selectively for chlorosilane production. The process comprises the steps of: a) determining the free carbon proportion which reacts with oxygen up to a temperature of 700° C., b) directing metallurgical silicon in which the free carbon proportion is ?150 ppmw to a process for producing chlorosilanes and/or directing metallurgical silicon in which the free carbon proportion is >150 ppmw to a process for producing methylchlorosilanes. As a result of the process, metallurgical silicon having a total carbon content of up to 2500 ppmw can be used for producing chlorosilanes.

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

Abstract: To provide a silica-based film-forming composition, which can form a homogeneous silica-based film, a method of producing a substrate including a silica-based film using the composition, and an additive agent to be added to a silica-based film-forming composition. In a silica-based film-forming composition including a polysilazane (A) and a solvent (S), a nitrogen-containing polar organic solvent is included as the solvent (S). In addition, the composition including a polysilazane (A) and a nitrogen-containing polar organic solvent as the solvent (S) is coated onto the surface of a substrate to form a coated film, which is then baked to produce a substrate including a silica-based film.

Abstract: The selectivity of a process for preparing trichlorosilane (TCS) by reaction of metallurgical silicon (mg-Si) and HCl, is improved by utilizing mg-Si having a titanium content greater than 0.06 wt %.

Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Abstract: A method of treating a carbon structure is provided. The method may include infiltrating the carbon structure with a silicon compound preparation, heat treating the carbon structure to form a plurality of silicon carbide whiskers in the carbon structure, and/or densifying the carbon structure.

Abstract: The present invention relates to a specific process for producing trisilylamine from monochlorosilane and ammonia in the liquid phase. The invention further relates to a plant in which such a process can be carried out with advantage.

Abstract: The invention relates to a method for producing carbon-coated, transition metal-doped zinc oxide particles and the use thereof as electrode material for alkali metal ion batteries and, in particular, lithium ion batteries.

Abstract: The present invention relates to a specific process for producing trisilylamine from monochlorosilane and ammonia in the liquid phase. The invention further relates to a plant wherein such a process can be carried out with advantage.

Abstract: A method to produce a hydrosilylation reaction-crosslinkable silicone rubber powder includes washing the hydrosilylation reaction-crosslinkable silicone rubber powder using an aqueous solution. The aqueous solution can be heated to a temperature of 30° C. to 99° C. The aqueous solution contains at least one type of surfactant. The hydrosilylation reaction-crosslinkable silicone rubber powder produced via the method has a platinum metal content ?3.5 ppm by mass. The hydrosilylation reaction-crosslinkable silicone rubber powder can be used for various applications, including use in a cosmetic composition, which can also include a cosmetic raw material.

Abstract: A method for preparing a composition including silicate mineral particles that have coloring properties in which a talcose composition, including phyllosilicate mineral particles chosen from the group formed: from the particles having the chemical formula: ((SixGe1-x)4 M3O10 (OH)2, the particles having at least one interlayer space and having the chemical formula: (SixGe1-x)4 M3-? O10 (OH)2, (M?m+)??.nH2O: -M having the formula Mgy(1)Coy(2)Zny(3)Cuy(4)Mny(5) Fey(6)Niy(7)Cry(8); -M?m+ designating at least one interlayer cation, the silicate mineral particles having a thickness of less than 100 nm and of which the largest dimension is less than 10 ???, is brought into contact with a dye solution, including dye cations, of at least one element chosen from the transition metals, the lanthanides and the actinides. The composition obtained by this method is also described.

Abstract: A method for manufacturing a silicon semiconductor substrate including a diffusion layer prior to forming a semiconductor device thereon, includes providing a silicon semiconductor substrate which is manufactured by a floating zone method; and performing thermal diffusion at a heat treatment temperature that is equal to or higher than 1290° C. and that is lower than a melting temperature of a silicon crystal to form a diffusion layer with a depth of 50 ?m or more in the silicon semiconductor substrate, the thermal diffusion including a first heat treatment performed in an atmosphere consisting of oxygen or oxygen and at least one of argon, helium, or neon, followed by a second heat treatment performed in an atmosphere comprised of nitrogen or nitrogen and oxygen to form the diffusion layer. The method suppresses the occurrence of crystal defects, reduces the amount of inert gas used, and reduces manufacturing costs.

Abstract: The present invention relates to a specific process for producing trisilylamine from monochlorosilane and ammonia in the liquid phase. The invention further relates to a plant wherein such a process can be carried out with advantage.

Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Abstract: The present invention relates to a specific process for producing trisilylamine from monochlorosilane and ammonia in the liquid phase. The invention further relates to a plant wherein such a process can be carried out with advantage.

Abstract: A polycrystalline silicon rod comprises a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit which is deposited on the outer circumferential surface of the seed rod by the CVD process. A diameter of the polycrystalline silicon rod is 77 mm or less. When the polycrystalline silicon rod is observed by an optical microscope with respect to the cross section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 ?m or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit. The needle-shaped crystals account for 78% or more of the cross section.

Abstract: The invention relates to a process for preparing trisilylamine and polysilazanes in the liquid phase, in which ammonia dissolved in an inert solvent is initially introduced in a substoichiometric amount relative to monochlorosilane which is likewise present in an inert solvent. The reaction is carried out in a reactor in which trisilylamine formed according to the following equation 4NH3+3H3SiCl?3NH4Cl+(SiH3)3N and polysilazanes are formed. The reactor is subsequently depressurized and TSA is separated off in gaseous form from the product mixture. The TSA obtained is purified by filtration and distillation and obtained in high or very high purity. Further ammonia dissolved in an inert solvent is subsequently introduced into the reactor, using, together with the previously introduced amount of ammonia, a stoichiometric excess of ammonia relative to the amount of MCS previously present.

Abstract: A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: Porous silicon particles and complex porous silicon particles suitable for negative electrode materials etc. for lithium-ion batteries, which achieve high capacity and good cycling characteristics, are provided. Porous silicon particles formed by the joining of a plurality of silicon microparticles, and having an average particle diameter of 0.1 ?m to 1000 ?m, a three-dimensional network structure having continuous gaps, an average porosity of 15 to 93%, and a structure in which the particles of a whole particle are uniform. Complex porous silicon particles formed by the joining of a plurality of silicon microparticles and a plurality of silicon compound particles, and characterized by containing a compound of silicon and composite elements, having an average particle diameter of 0.1 ?m to 1000 ?m, and having a three-dimensional network structure having continuous gaps.

Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

Abstract: A process of treating a gas stream containing mercury and acid gas pollutants is disclosed. The process includes applying a sorbent composition into a gas stream in order to adsorb mercury containing compounds and acid gas pollutants. The sorbent composition includes a compound having the formula (SiO2)x(OH)yMzSaF.B. The combination of basic inorganic solids for the adsorption of acid gases, and metal sulfide-doped silica for the adsorption of mercury provides dual sorbent functionality, along with additional benefits for each individual sorbent: silica for moisture retention on the surface of the basic inorganic particle and adsorption of acid gas, which will improve metal sulfide performance at higher operating temperatures. The use of a hygroscopic solid effectively dries the metal sulfide-doped silica slurry without the use of filtration of drying equipment, providing significant economic benefit for the manufacture of metal sulfide-doped silica material.

Abstract: The present invention provides a coating liquid for forming an insulation film, which has a small shrinkage in the calcination step in water vapor and is not likely to cause cracking of a resulting silica coating film or detachment thereof from a semiconductor substrate; an insulation film using the same; and a method of producing a compound used in the same. The coating liquid of comprises an inorganic polysilazane whose ratio of a peak area at 4.5 to 5.3 ppm attributed to SiH1 group and SiH2 group with respect to a peak area at 4.3 to 4.5 ppm attributed to SiH3 group in 1H-NMR spectrum is 4.2 to 50; and an organic solvent. The insulation film is obtained using the coating liquid.

Abstract: The present invention relates to a specific process for producing trisilylamine from monochlorosilane and ammonia in the liquid phase. The invention further relates to a plant wherein such a process can be carried out with advantage.

Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Abstract: A method of producing alkoxysilanes and precipitated silicas from biogenic silicas is provided. In a first step, biogenically concentrated silica is mixed with a liquid polyol to obtain a mixture, and then the mixture is heated. In a second step, a base is added to obtain a reaction mixture. In a third step, the reaction mixture is filtered to remove the carbon enriched RHA or other undissolved biogenic silica and recover the solution of alkoxysilane and alcoholate. In a fourth step, alkoxysilane is purified by filtering, distilling, precipitating or extracting from the original reaction solution to precipitate various forms of silica. In a final step, residual base present in alkoxysilane is neutralized to eliminate the residual alkali metal base.

Abstract: Disclosed and claimed herein are hybrid silica aerogels containing non-polymeric, functional organic materials covalently bonded at one or both ends to the silica network of the aerogels through a C—Si bond between a carbon atom of the organic material and a silicon atom of the aerogel network. Methods of their preparation are also disclosed.

Abstract: The invention relates to a process for preparing trisilylamine and polysilazanes in the liquid phase, in which ammonia dissolved in an inert solvent is initially introduced in a substoichiometric amount relative to monochlorosilane which is likewise present in an inert solvent. The reaction is carried out in a reactor in which trisilylamine formed according to the following equation 4NH3+3H3SiCl?3NH4Cl+(SiH3)3N and polysilazanes are formed. The reactor is subsequently depressurized and TSA is separated off in gaseous form from the product mixture. The TSA obtained is purified by filtration and distillation and obtained in high or very high purity. Further ammonia dissolved in an inert solvent is subsequently introduced into the reactor, using, together with the previously introduced amount of ammonia, a stoichiometric excess of ammonia relative to the amount of MCS previously present.

Abstract: Thin films comprising crystalline Fe2XY4, wherein X is Si or Ge and Y is S or Se, are obtained by coating an ink comprised of nanoparticle precursors of Fe2XY4 and/or a non-particulate amorphous substance comprised of Fe, X and Y on a substrate surface and annealing the coating. The coated substrate thereby obtained has utility as a solar absorber material in thin film photovoltaic devices.

Abstract: Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.

Abstract: The present invention relates to a zero-waste process for extraction of alumina from different types of bauxite ores and red mud residues and of titanium dioxide from ilmenite. Iron oxide is first reduced to metallic iron above the melting point of C-saturated cast iron alloy which yields a high-C iron alloy and an Al and Ti metal oxide rich slag which is then treated with alkali carbonate to form alkali aluminates and titanates. The alkali aluminates are separated by water leaching from which the hydroxide of alumina is precipitated by bubbling C02. The residue from water leaching is treated with sulphuric acid and Ti02 is precipitated via a hydrolysis route. The process recovers most of the metal values and generates only small quantities of silicious residues at pH 4-5 which can be used for soil conditioning.

Abstract: New magnetic materials containing cerium, iron, and small additions of a third element are disclosed. These materials comprise compounds Ce(Fe12?xMx) where x=1-4, having the ThMn12 tetragonal crystal structure (space group I4/mmm, #139). Compounds with M=B, Al, Si, P, S, Sc, Co, Ni, Zn, Ga, Ge, Zr, Nb, Hf, Ta, and W are identified theoretically, and one class of compounds based on M=Si has been synthesized. The Si cognates are characterized by large magnetic moments (4?Ms greater than 1.27 Tesla) and high Curie temperatures (264?Tc?305° C.). The Ce(Fe12?xMx) compound may contain one or more of Ti, V, Cr, and Mo in combination with an M element. Further enhancement in Tc is obtained by nitriding the Ce compounds through heat treatment in N2 gas while retaining the ThMn12 tetragonal crystal structure; for example CeFe10Si2N1.29 has Tc=426° C.

Abstract: A gas barrier laminate comprising a substrate having thereon at least a gas barrier layer and a polymer layer, wherein at least one polymer layer is provided adjacent to at least one gas barrier layer; and an average carbon content of the polymer layer at a contact interface between the gas barrier layer is lower than an average carbon content in the polymer layer.

Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.

Abstract: Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.

Abstract: Non-spherical siliceous particles having a plurality of porous branches are disclosed and claimed. The porous branches are randomly oriented and elongated, ring-like, and/or aggregated. An additive introduced during synthesis of the particles modifies pore volume and morphology. The tunability of the pore volume includes an inner diameter ranging from about 2 ? to about 50,000 ?. Synthesizing the particles includes mixing under constant or intermittent stirring in a reaction vessel an aqueous silicic acid solution with an acidic heel solution to form a mixture. The stirring may optionally be performed at a variable speed. An additive is introduced into the mixture at a controlled rate, wherein the additive imposes a pH change from a lower pH to a higher pH to the mixture to induce siliceous particle precipitation.

Abstract: The present invention relates to a specific process for producing trisilylamine from monochlorosilane and ammonia in the liquid phase. The invention further relates to a plant wherein such a process can be carried out with advantage.

Abstract: A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Abstract: Provided is a clathrate compound represented by a following chemical formula, for example, BaaGabAlcSid (where 7.77?a?8.16, 7.47?b?15.21, 0.28?c?6.92, 30.35?d?32.80, and a+b+c+d=54), and a thermoelectric material containing the clathrate compound. A producing method of the thermoelectric material is also provided.

Abstract: The present invention relates to a specific process for producing trisilylamine from monochlorosilane and ammonia in the liquid phase. The invention further relates to a plant in which such a process can be carried out with advantage.

Abstract: A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract: Disclosed is an inorganic polysilazane that undergoes less shrinkage during a calcination step in an oxidizing agent such as water vapor and is less prone to allow a silica film to suffer from the formation of cracks or peel off from a semiconductor substrate, and a silica film-forming coating liquid containing the inorganic polysilazane, and also provides an inorganic polysilazane and a silica film-forming coating liquid containing the same. The value of A/(B+C) is 0.9-1.5 and the value of (A+B)/C is 4.2-50. A=peak area within the range of from 4.75 ppm to less than 5.4 ppm. B=peak area within the range of from 4.5 ppm to less than 4.75 ppm. Peak area within the range of from 4.2 ppm to less than 4.5 ppm is represented by C in a 1H-NMR spectrum; and the polystyrene-equivalent mass average molecular weight is 2000 to 20000.

Abstract: A method for producing high-purity silicon nitride in two steps is described, wherein a) high-purity silicon is reacted with nitrogen in a rotary tubular furnace comprising a first temperature zone of 1,150 to 1,250° C. and at least one other temperature zone of 1,250 to 1,350° C. in the presence of a gas mixture comprising argon and hydrogen, said reaction proceeding up to a nitrogen content of 10 to 30 wt % and b) allowing the partially nitrogen-containing product from step a) to react in a chamber or settling furnace in a quiescent bed at 1,100 to 1,450° C. with a mixture of nitrogen, argon and optionally hydrogen up to the completion of nitrogen uptake. It is possible, utilizing the method according to the invention, to produce high-purity silicon nitride with a purity of >99.9 in a technically simple manner, wherein no further purification steps, such as leaching with inorganic acids, are required.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0?y<1, 0?m?1, 0?a?1, 0?n<9, 0?z?4, 0?b?3 and 0<n+z+b.

Abstract: The invention relates to a method for producing trisilylamine from ammoniac and monochlorosilane in the gas phase. The invention further relates to a plant in which such a method can be performed.

Abstract: The present disclosure relates to a protective layer composition that includes TixSiyA, where A is Cm, CmNl, OnCm, or OnCmNl and x, y, l, m, and n are positive integers. In one implementation, the protective layer composition has a ratio of x over (x+y) in the range of between about 0.1 and about 1.0. In another implementation, the protective layer composition has a ratio of x over (x+y) in the range of between about 0.3 and about 0.9. In yet another implementation, the protective layer composition has a ratio of x over (x+y) that is about 0.6. The protective layer composition may be amorphous. Also, the protective layer composition may include an atomic percentage of Ti that is less than about 20%. In one implementation of the protective layer composition, x is 2, y is 1, and A is C3.

Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange.

Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis process that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This process facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.