Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.

Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.

Abstract: A hydrazine-fixing group such as a ketone group, a formyl group, a chlormethyl group or an amide group, which is capable of releasably fixing hydrazine, is introduced into a side chain of a synthetic resin, and hydrazine is fixed to the hydrazine-fixing group. Since a hydrazine storage resin of the present invention has a hydrazine-releasable group capable of releasing hydrazine, it is able to store hydrazine stably. In addition, hydrazine can be supplied by releasing hydrazine from the hydrazine-releasable group. Consequently, the hydrazine storage resin can be widely used in various industrial fields requiring supply of hydrazine.

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A method for the production of nitrogen trifluoride (NF.sub.3) and hydrogen (H.sub.2) gas, starting with a molten flux including at least ammonia (NH.sub.3), a metal fluoride, and hydrogen fluoride (HF), including the steps of: circulating the molten flux from an electrolyzer, to an ammonia solubilizer, to a nitrogen trifluoride reactor, to a hydrogen fluoride solubilizer, and back to the electrolyzer; maintaining the quantity of the molten flux substantially constant by adding ammonia (NH.sub.3) and a carrier gas to the ammonia solubilizer and by adding hydrogen fluoride (HF) and a carrier gas to the hydrogen fluoride solubilizer; producing fluorine (F.sub.2) gas and hydrogen (H.sub.

Abstract: The present invention relates to high performance ceramics and methods for their production using supercritical temperatures and supercritical pressures. Furthermore, the present invention relates to high performance ceramics for use in the automobile industry.

Abstract: 1. A continuous cyclic process for preparing hydrazine comprising the step of:(a) contacting in a non-aqueous medium at least one haloamine of the formula NH.sub.2 --X, wherein X is a halogen, with at least one material selected from the group consisting of the metals of Groups IA and IIA and the amides thereof to provide an anhydrous mixture containing hydrazine and a metal halide;(b) separating said hydrazine from said anhydrous mixture;(c) subjecting the hydrazine-poor residue of step (b) to direct current electrolysis to separate the metal component and the halogen component of said metal halide from each other; and(d) recycling said metal for reaction with fresh haloamine in step (a).

Abstract: A novel process is disclosed for preparing hydrazine, phenyl-substituted and alkyl-substituted hydrazines. The process comprises reacting an N-haloamine with the corresponding alkali metal or alkaline earth metal amide in the presence of a non-aqueous, inert carrier and at a temperature below about 0.degree. C., briefly heating the resulting reaction mixture and separating the desired hydrazine product.

Abstract: In the production of hydrazine wherein aqueous ammonia is oxidized in the presence of a ketone to form an aqueous solution containing at least one of a hydrazone and a ketazine along with ammonia, the hydrazone and ketazine are concentrated and the hydrazone and ketazine are subsequently hydrolyzed to hydrazine and ketone, the improvement which comprises effecting the concentration of the hydrazone and ketazine by extracting the aqueous solution with a substantially water-immiscible organic solvent whereby the hydrazone and ketazine preferentially enter the water-immiscible solvent, and separating the water-immiscible solvent extract from the aqueous solution. The organic solvent is preferably a higher alcohol, a chlorinated hydrocarbon, benzene or a substitution product thereof.

Abstract: A method for preparing hydrazine and its compounds is described. Hypochlorous acid in a non-aqueous solvent is reacted with a carbonyl compound and with a nitrogen-contributing compound selected from the group consisting of ammonia, primary alkyl amines and mixtures of these. Hydrazine intermediates such as azines, hydrazones, and diazacyclopropanes are obtained and these may, if desired, be converted to hydrazine and its compounds, e.g., by hydrolysis.