Abstract: The disclosure provides for zirconium terephthalate-based metal organic frameworks with open metal sites, and uses thereof.

Abstract: A metal organic framework (MOF) includes a coordination product of a metal ion and an at least bidentate organic ligand, where the metal ion and the organic ligand are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas. A porous organic polymer (POP) includes polymerization product from at least a plurality of organic monomers, where the organic monomers are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Abstract: When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

Abstract: A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1?d2|/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 ?m and a plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 1.9×10?3, and the main surface has a plane orientation inclined in the <10-10> direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

Abstract: Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled.

Abstract: A method for producing a workpiece comprising a layer of an additive-free silicon nitride includes providing a base body of the workpiece. A layer of a slip comprising a silicon powder is applied to an inside of the base body so as to obtain a coated base body. The coated base body is subjected to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride.

Abstract: This invention relates to a process for purifying at least one of perfluoromethane and nitrogen trifluoride from a mixture thereof using an ionic liquid. The process may be performed by a technique such as extractive distillation or absorption wherein at least one ionic liquid is used as the entraining agent or absorbent, respectively.

Abstract: A hexagonal boron nitride (h-BN) powder is disclosed in which primary particles of the powder exhibit a ratio (D/d) of long diameter (D) to thickness (d) in a range of 5 to 10. Agglomerated particle bodies made of the primary particles have an average particle diameter (D50) in a range of 2 ?m to 200 ?m, inclusive, and the powder has a bulk density in a range of 0.5 g/cm3 to 1.0 g/cm3. In an exemplary method for producing the h-BN, boron carbide is nitridizated in a nitrogen partial pressure of at least 5 kPa at 1800° C. to 2200° C., inclusive. B2O3 (or precursor thereof) is added to the nitridization product to produce a mixture. The mixture is decarbonized in a non-oxidizing atmosphere at a 1500° C. to 2200° C., inclusive. The decarbonization product is pulverized and subject to particle-size classification, yielding H-BN powder. The method includes a depressurizing step, performed at 100 kPa or less either during nitridization or after decarbonization.

Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.

Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.

Abstract: Systems and methods of producing chemical compounds are disclosed. An example chemical production system includes an intake chamber having intake ports for entry of a gas mixture. An igniter ignites the gas mixture in the intake chamber. A nozzle restricts exit of the ignited gas mixture from the intake chamber. An expansion chamber cools the ignited gas with a cooling agent. The expansion chamber has an exhaust where the cooled gas exits the expansion chamber. A chemical compound product is formed in the expansion chamber.

Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.

Abstract: A polyvinylidene fluoride (PVDF) pyrolyzate adsorbent is described, having utility for storing gases in an adsorbed state, and from which adsorbed gas may be desorbed to supply same for use. The PVDF pyrolyzate adsorbent can be of monolithic unitary form, or in a bead, powder, film, particulate or other finely divided form. The adsorbent is particularly suited for storage and supply of fluorine-containing gases, such as fluorine gas, nitrogen trifluoride, carbo-fluoride gases, and the like. The adsorbent may be utilized in a gas storage and dispensing system, in which the adsorbent is contained in a supply vessel, from which sorbate gas can be selectively dispensed.

Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.

Abstract: Presented is a method for Batch or continuous production of nitrogen trifluoride (NF3) using direct fluorination of organic solution of trimethylsilylamines at low temperatures. Fluorine gas reacts with a solution of tris(trimethylsilyl)amine or bis(trimethylsilyl)amine in a suitable reactor to produce NF3 in a continuous flow process. The crude product can be purified by a channeling the crude process flow through a scrubber to remove reactive byproducts and by cryogenic trapping of other non reactive byproducts in the process flow. Temperatures in the reaction and storage vessels are maintained to control the reaction products based on thermodynamics of the process and products. NF3 is liquefiable at ?126 degree Centigrade, and may be collected and used in other processes. The method also produce NF3 as a continuous gas flow process where fluorine is channeled to contact micro droplet suspensions of bis(trimethylsilyl)amines in sulfur hexafluoride.

Abstract: A method for ammonothermally growing group-III nitride crystals using an initially off-oriented non-polar and/or semi-polar growth surface on a group-III nitride seed crystal. Group-III-containing source materials and group-III nitride seed crystals are placed into a vessel, wherein the seed crystals have one or more non-polar or semi-polar growth surfaces. Group-III nitride crystals are ammonothermally grown by filling the vessel with a nitrogen-containing solvent for dissolving the source materials and transporting a fluid comprised of the solvent with the dissolved source materials to the seed crystals for growth of the group-III nitride crystals on the seed crystals. The growth surfaces are initially off-oriented growth surfaces, wherein the growth surfaces are off-oriented m-plane or highly vicinal m-plane growth surfaces. The growth surfaces of the seed crystals may be created by cutting group-III nitride crystals at a desired angle with respect to an m-plane.

Abstract: To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method. A process for producing a nitride crystal, which comprises bringing a reactant gas reactive with ammonia to form a mineralizer, and ammonia into contact with each other to prepare a mineralizer in a reactor or in a closed circuit connected to a reactor; and growing a nitride crystal by an ammonothermal method in the presence of the ammonia and the mineralizer.

Abstract: A method for adding hydrogen-containing and/or nitrogen-containing compounds to a nitrogen-containing solvent used during ammonothermal growth of group-Ill nitride crystals to offset decomposition products formed from the nitrogen-containing solvent, in order to shift the balance between the reactants, i.e. the nitrogen-containing solvent and the decomposition products, towards the reactant side.

Abstract: A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.

Abstract: A highly active and environment-friendly catalyst for use in a living radical polymerization is provided. A catalyst for use in a living radical polymerization method is provided. The catalyst comprises a central element, which is selected from nitrogen and phosphorus, and at least one halogen atom, which is bound to the central element. A monomer having a radical reactive unsaturated bond is subjected to a radical polymerization reaction in the presence of the catalyst, thereby it is possible to obtain a polymer having narrow molecular weight distribution. The present invention has the merits such as low toxicity of the catalyst, a small amount of the catalyst being required, high solubility of the catalyst in the polymerization media, mild reaction conditions, no coloration, no odor (unnecessary post-treatment of molded products). The method of the present invention is more environment-friendly and economical than other living radical polymerization methods.

Abstract: Catalytic system for partial oxidation reactions of hydrocarbons characterized in that it contains: one or more metals belonging to the 1st, 2nd, and 3rd transition series; one or more elements of group IIIA, IVA or VA, wherein at least one of said metals or said elements is in the form of a nitride.

Abstract: Provided herein is a new material, periodic mesoporous phosphorus-nitrogen compound, which may be used in a variety of emerging technologies. Its surface properties render it promising as a component in a variety of applications, including gas separation and purification systems in which waste gases such as SO2, SO3, or CO2 are separated from other gases. It may also be used as an interlayer dielectric in microelectronic chips. Its structure and composition are useful due to an advantageous and favorable combination of thermal stability, elastic modulus, and dielectric properties. The surface properties and the regularity of the pores furthermore provides utility as shape selective base catalysts. Protonated forms of the material are expected to be useful as a solid acid, and in applications such as acid catalysis. Additionally, because of the thermal behavior of the material, it is useful as “hard” template for other porous materials, without the need of an external reagent.

Abstract: A method for producing nitrogen trifluoride related to the present invention is characterized in that a fluorine gas and an ammonia gas are fed into a tubular reactor and are reacted with each other in the presence of a diluting gas in a gaseous phase under the condition of no catalyst to produce a gas product mainly composed of nitrogen trifluoride and a solid product mainly composed of ammonium fluoride and/or acidic ammonium fluoride, and then the solid product attached to an inner wall of the tubular reactor is removed by means of a device for removing the solid product, which device is mounted to the tubular reactor.

Abstract: Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24).

Abstract: A negative electrode for a lithium ion secondary battery including a current collector and an active material layer carried on the current collector, wherein the active material layer includes an active material and no binder, the active material contains silicon and nitrogen, and the active material layer has a larger nitrogen ratio on a side of a first face which is in contact with the current collector than on a side of a second face which is not in contact with the current collector.

Abstract: A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.

Abstract: A method for producing nitrogen trifluoride related to the present invention is characterized in that a fluorine gas and an ammonia gas are fed into a tubular reactor and are reacted with each other in the presence of a diluting gas in a gaseous phase under the condition of no catalyst to produce a gas product mainly composed of nitrogen trifluoride and a solid product mainly composed of ammonium fluoride and/or acidic ammonium fluoride, and then the solid product attached to an inner wall of the tubular reactor is removed by means of a device for removing the solid product, which device is mounted to the tubular reactor.

Abstract: A highly pure nitrogen trifluoride having a carbon tetrafluoride content of 10 ppm or less can be effectively obtained by boiling crude liquid nitrogen trifluoride having carbon tetrafluoride contaminant under a pressure ranging from 35 to 45 atm, to remove carbon tetrafluoride therefrom through vaporization.

Abstract: A highly pure nitrogen trifluoride having a carbon tetrafluoride content of 10 ppm or less can be effectively obtained by boiling crude liquid nitrogen trifluoride having carbon tetrafluoride contaminant under a pressure ranging from 35 to 45 atm, to remove carbon tetrafluoride therefrom through vaporization.

Abstract: A method for preparing a high-pressure phase cubic spinel-type silicon nitride includes housing a molding containing low-pressure phase silicon nitride powder and a metal powder in a cylindrical container, arranging an explosive in the cylindrical container so as to surround the molding, and exploding the explosive to compress the molding. An X-ray diffraction pattern of the high-pressure phase cubic spinel-type silicon nitride produced according to the method of the present invention shows a maximum peak having a full width at half maximum of 0.65 degrees or less. TG-DTA analysis of the cubic spinel-type silicon nitride shows a weight change starting temperature of 700 to 1100° C.

Abstract: The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4 particles. The invention further relates to a method for producing the silicon nitride mould parts.

Abstract: A method and apparatus for manufacture of NF3 by gas-liquid phase reaction of fluorine and ammonia in molten ammonium acid fluoride (AAF) in a static reactor in which the reactants are conveyed primarily by thermal conduction or siphon. Optimally, the reactor contains one or more static mixing elements with little, if any, mechanical agitation. Reactant flow rate and reaction temperature are regulated by the rate of introduction of ammonia and cooling, as necessary The ratio of hydrogen fluoride (generated by the reaction) to ammonia in the reactor is significantly lower than taught in the prior art. This allows a lower reaction temperature. The present invention is an improved synthetic method that offers enhanced selectivity and higher yields, improved control of reaction kinetics, reduced operational and energy costs, and a greater margin of safety.

Abstract: The present invention relates to a process for production, shipment, and treatment of a NH4F(HF)x feedstock for local production of fluorine and NF3 for semiconductor chamber cleaning without the need for storage of large quantities of dangerous feeds and intermediate products.

Abstract: A process and system for adsorption purification of NF3 wherein a crude product containing NF3 and impurities such as CF4 is brought into contact with a polyacrylonitrile-based carbon molecular sieve so that at least a portion of one or more impurities are adsorbed by the sieve without a significant adsorption of the NF3.

Abstract: A process for the production of nitrogen trifluoride by reacting fluorine gas and liquid ammonia acid fluoride in a first reaction zone having a relatively low energy input followed by treatment of the resulting reaction product in a second reaction zone having a relatively high energy input. The resulting crude nitrogen trifluoride product may be further treated with fluorine gas under elevated temperatures to improve yield of the desired product.

Abstract: Nitrogen trifluoride is produced with a high yield by the method comprising forming a fast stream of micro droplets of a fused ammonium fluoride salt by rapidly ejecting the fused ammonium fluoride salt into a reactor through a nozzle while circulating the fused ammonium fluoride salt in the reactor from a lower portion to an upper portion; and contacting micro droplets of the fused ammonium fluoride salt with fluorine gas sucked in the reactor through a suction pipe for fluorine by a negative pressure formed around the nozzle due to an ejection of the fused ammonium fluoride salt, whereby excessive generation and regional accumulation of the heat of reaction are prevented, reducing the reaction temperature by 10˜30° C. compared with those of the existing methods, and a side reaction occurs only to a slight extent according to the lowered reaction temperature.

Abstract: This invention describes an improvement in a process for purifying a nitrogen trifluoride (NF3) stream containing unreacted F2, HF, and nitrogen oxides from an NF3 reactor wherein the F2, and HF are removed and then the nitrogen oxides removed by adsorption. The improvement in the process resides in selectively removing the F2 from said NF3 stream without generating oxygen difluoride, removing HF and then removing said nitrogen oxides by adsorption. Further purification can be effected as desired.

Abstract: The present invention is directed to an improved reaction process that allows for the achievement of excellent NF3 production yields, while minimizing the amount of unreacted fluorine exiting with the process gases and minimizing the amount of liquid melt waste (HF/NH3) produced by the process. The basic NF3 process resides in reacting F2 with an ammonium ion source, e.g., ammonium acid fluoride, under conditions for forming NF3. The improvement in the process comprises: introducing F2 and said ammonium ion source cocurrently and downflow through a packed column or monolith column at a first temperature; reacting said F2 and ammonium ion source in said column; and, removing a mixture of NF3 and byproducts from said column at a second temperature higher than said first temperature.

Abstract: A metal container to be filled with a halogen containing gas, with the inner surface processed with a polishing agent. The gas has a reduced purity decline by the increase of the water content or impurities from the inner surface of the container which is absorbed by the gas over the passage of time. The inner surface processing method is improved such that the value of dividing the area of the Si2s peak by the area of the Fe2p3/2 peak in the X-ray photoelectron spectrum of the gas container inner surface with the inner surface process with a polishing agent applied is 0.3 or less.

Abstract: The present invention relates to a method of purifying gaseous nitrogen trifluoride from CF4 as impurity. The method comprises selective adsorption of nitrogen trifluoride by dehydrated erionite at a temperature of from ?30 to 30° C., displacement of carbon tetrafluoride by an inert gas, desorption and condensation of the purified nitrogen trifluoride. The purification yields 99.99% pure NF3 with CF4 content not over 10 ppm. The proposed method of NF3 sorption purification makes it possible to carry out the process at an ambient temperature and with long operating life of the sorbent. The method is practically feasible, economically expedient, and easy to implement under industrial conditions.

Abstract: F2 gas is reacted with NH3 gas in a gaseous phase at 80° C. or less in the presence of a diluting gas to produce NF3. Thus, NF3 is produced with good safety, efficiency and profitability.

Abstract: The present invention provides a method and apparatus for producing nitrogen trifluoride. The method comprises contacting a fluorine-containing feed stream with liquid ammonium acid fluoride in a reaction zone for time and under conditions sufficient to produce nitrogen trifluoride. During the contacting step, the effective melt acidity value of the liquid ammonium acid fluoride is decreased and a reaction product stream is removed. In one embodiment, a gaseous mixture of elemental fluorine and hydrogen fluoride is contacted with a bulk liquid ammonium acid fluoride, such that the initial effective melt acidity value is greater than the melt acidity value of the bulk liquid ammonium acid fluoride in the reaction zone.

Abstract: A method for the production of nitrogen trifluoride from a fluorine reactant and an ammonium ion source that is dispersed within a liquid phase reaction mixture containing one or more perfluorocarbon fluids is disclosed herein. In one embodiment, the fluorine reactant is introduced to the reaction mixture at a temperature that ranges from 90° C. to 120° C. In this embodiment, the percentage yield of nitrogen trifluoride may be about 80% or greater.

Abstract: The invention provides a method and apparatus for producing nitrogen trifluoride. The invention involves passing a working fluid through a heat engine cycle and using the mechanical energy generated by the working fluid to produce sufficient mixing intensity within a nitrogen trifluoride reactor. The method utilizes a working fluid vapor jet, such as a hydrogen fluoride vapor jet, to impart sufficient energy to the mixing zone of a reactor in order to disperse gaseous fluorine within a liquid ammonium acid fluoride melt. A gaseous reaction product stream is removed from the reactor, the reaction product stream comprising nitrogen trifluoride and a working fluid vapor. The working fluid is then separated from the nitrogen trifluoride and recycled for reuse in the process, thereby completing a heat engine cycle.

Abstract: The invention relates to a new process for preparing nitrogen trifluoride which finds extensive application in the technology of semiconductors, high energy lasers, and chemical vapor deposition. Nitrogen trifluoride is prepared by the fluorination of urea or its decomposition products with elemental fluorine in anhydrous hydrogen fluoride at a temperature of from −20° C. to 0° C. and the molar ratio of fluorine to the starting compounds of not over 3. The concentration of the starting compounds in anhydrous hydrogen fluoride is preferably 20-50% by weight. The proposed process is explosion-safe and gives a product with maximum content of nitrogen trifluoride and minimum concentration of admixtures, with the yield of up to 90%.

Abstract: The invention provides a method and apparatus for producing nitrogen trifluoride. The invention involves passing a working fluid through a heat engine cycle and using the mechanical energy generated by the working fluid to produce sufficient mixing intensity within a nitrogen trifluoride reactor. The method utilizes a working fluid vapor jet, such as a hydrogen fluoride vapor jet, to impart sufficient energy to the mixing zone of a reactor in order to disperse gaseous fluorine within a liquid ammonium acid fluoride melt. A gaseous reaction product stream is removed from the reactor, the reaction product stream comprising nitrogen trifluoride and a working fluid vapor. The working fluid is then separated from the nitrogen trifluoride and recycled for reuse in the process, thereby completing a heat engine cycle.

Abstract: The concentration of undesirable impurities dinitrogen difluoride and dinitrogen tetrafluoride in a nitrogen trifluoride mixture are reduced by heating the mixture in the gas phase in a vessel with an inner wall selected from electropolished metal, ceramic alumina or sapphire, and recovering a nitrogen trifluoride product having reduced concentration of such impurities. The process is preferably carried out at a temperature of at least about 150° C. to about 300° C. and the vessel is preferrably free of packing and has a minimized ratio of the vessel interior surface area to vessel volume in the region of the vessel where the heating step is carried out. The process optionally may further include the step of contacting the inner wall of the vessel with a passivating composition comprising fluorine gas.