Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: An epoxy resin composition comprising an epoxy resin, a curing agent, (A) a carboxyl-containing benzotriazole derivative, and (B) an alkoxysilyl-containing aminoalkylsilane derivative is suited for encapsulating semiconductor devices. The sum of (A)+(B) is 0.5-5.0 pbw per 100 pbw of the sum of the epoxy resin and the curing agent, and a molar ratio (A)/(B) is 0.5-1.5. The composition is free of sulfur and highly adhesive to metal substrates.

Abstract: The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 ?m was heated to a temperature in a range of 595° C.˜900° C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.

Abstract: A method for producing aluminum nitride is to disclose, which includes injecting a nitrogen-containing gas and a pure aluminum material into a high-temperature jet mill. In the high-temperature jet mill, the injected pure aluminum material reacts with the nitrogen and forms aluminum nitride on the surface. The aluminum nitride is continuously to pulverize in the high-temperature jet mill to form fine aluminum nitride powder. According to the present disclosure, unnecessary cost and complicated processes in elevated-temperature agglomeration is to avoid.

Abstract: A method of manufacture for a semiconductor device is disclosed. The method includes providing a semiconductor stack structure that includes a device terminal of a semiconductor device, and having a first surface and a buried oxide (BOX) layer attached to a wafer handle. Another step includes disposing a polymeric layer that includes a polymer and an admixture that increases thermal conductivity of the polymer onto the first surface of the semiconductor stack structure. Another step involves removing the wafer handle from the BOX layer to expose a second surface of the semiconductor stack structure, and yet another step involves removing a portion of the semiconductor stack structure to expose the device terminal.

Abstract: A method of manufacture for a semiconductor device is disclosed. The method includes providing a semiconductor stack structure that includes a device terminal of a semiconductor device, and having a first surface and a buried oxide (BOX) layer attached to a wafer handle. Another step includes disposing a polymeric layer that includes a polymer and an admixture that increases thermal conductivity of the polymer onto the first surface of the semiconductor stack structure. Another step involves removing the wafer handle from the BOX layer to expose a second surface of the semiconductor stack structure, and yet another step involves removing a portion of the semiconductor stack structure to expose the device terminal.

Abstract: A controlled-release solid nitride fertilizer from fly ash and a method for making are described. The fertilizer includes a nitrogen source including at least one solid nitride combined with at least one precipitation-inhibiting agent and with at least one moisture-retention agent, all compressed together to form a porous release structure that in contact with water releases ammonium ions as a nitrogen nutrient at a substantially uniform release rate over a selected release period and thereby maximizes nitrogen-use efficiency by plants.

Abstract: A method of manufacture for a semiconductor device is disclosed. The method includes providing a semiconductor stack structure that includes a device terminal of a semiconductor device, and having a first surface and a buried oxide (BOX) layer attached to a wafer handle. Another step includes disposing a polymeric layer that includes a polymer and an admixture that increases thermal conductivity of the polymer onto the first surface of the semiconductor stack structure. Another step involves removing the wafer handle from the BOX layer to expose a second surface of the semiconductor stack structure, and yet another step involves removing a portion of the semiconductor stack structure to expose the device terminal.

Abstract: A method of manufacture for a semiconductor device is disclosed. The method includes providing a semiconductor stack structure that includes a device terminal of a semiconductor device, and having a first surface and a buried oxide (BOX) layer attached to a wafer handle. Another step includes disposing a polymeric layer that includes a polymer and an admixture that increases thermal conductivity of the polymer onto the first surface of the semiconductor stack structure. Another step involves removing the wafer handle from the BOX layer to expose a second surface of the semiconductor stack structure, and yet another step involves removing a portion of the semiconductor stack structure to expose the device terminal.

Abstract: A method of manufacture for a semiconductor device is disclosed. The method includes providing a semiconductor stack structure that includes a device terminal of a semiconductor device, and having a first surface and a buried oxide (BOX) layer attached to a wafer handle. Another step includes disposing a polymeric layer that includes a polymer and an admixture that increases thermal conductivity of the polymer onto the first surface of the semiconductor stack structure. Another step involves removing the wafer handle from the BOX layer to expose a second surface of the semiconductor stack structure, and yet another step involves removing a portion of the semiconductor stack structure to expose the device terminal.

Abstract: A method of manufacture for a semiconductor device is disclosed. The method includes providing a semiconductor stack structure that includes a device terminal of a semiconductor device, and having a first surface and a buried oxide (BOX) layer attached to a wafer handle. Another step includes disposing a polymeric layer that includes a polymer and an admixture that increases thermal conductivity of the polymer onto the first surface of the semiconductor stack structure. Another step involves removing the wafer handle from the BOX layer to expose a second surface of the semiconductor stack structure, and yet another step involves removing a portion of the semiconductor stack structure to expose the device terminal.

Abstract: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.

Abstract: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.

Abstract: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.

Abstract: The product of a molten alkali metal metalate phase separation can be processed into a purified metal from a metal source. Metal sources include native ores, recycled metal, metal alloys, impure metal stock, recycle materials, etc. The method uses a molten alkali metal metalate as a process medium or solvent in purifying or extracting high value metal or metal oxides from metal sources. Vitrification methods using the silicate glass separation phase can be prepared as is or can be prepared with a particulate phase distributed throughout the silica glass phase and encapsulated and fixed within the continuous glass phase. Tungsten metal can be obtained from an alkali metal tungstate. A typically finely divided tungsten metal powder can be obtained from a variety of tungsten sources including recycled tungsten scrap, tungsten carbide scrap, low grade tungsten ore typically comprising tungsten oxide or other form of tungsten in a variety of oxidation states.

Abstract: A method for manufacturing aluminum nitride powder includes steps of: preparing a polymer powder, a wood powder having grain size similar with that of the polymer powder, and an alumina powder; and mixing the polymer powder, the wood powder and the alumina powder uniformly and forming granules to be carried out a single-replacement reaction by exposing the granules in a nitrogen-containing atmosphere at a temperature of 1680-1850° C.

Abstract: Systems, methods and apparatus relating to evaluation of alumina feedstocks are disclosed. A system may include an alumina storage unit comprising an alumina feedstock, an alumina supply member in communication with the alumina storage unit and an aluminum electrolysis cell. The alumina feedstock of the alumina storage unit may periodically flow through the alumina supply member and to the aluminum electrolysis cell. A measurement device may be in communication with the alumina supply member, and may be configured to measure a supply member property and transmit a first signal to a processor. The processor may be configured to receive the first signal and produce supply member property data based, at least in part, on the first signal.

Abstract: A method for selective formation of a gallium nitride material on a (100) silicon substrate. The method includes forming a blanket layer of dielectric material on a surface of a (100) silicon substrate. The blanket layer of dielectric material is then patterned forming a plurality of patterned dielectric material structures on silicon substrate. An etch is employed that selectively removes exposed portions of the silicon substrate. The etch forms openings within the silicon substrate that expose a surface of the silicon substrate having a (111) crystal plane. A contiguous AlN buffer layer is then formed on exposed surfaces of each patterned dielectric material structure and on exposed surfaces of the silicon substrate. A gallium nitride material is then formed on a portion of the contiguous AlN buffer layer and surrounding each sidewall of each patterned dielectric material structure.

Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.

Abstract: A method for producing an aluminum nitride powder includes mixing an alumina powder having an average particle diameter of not more than 5 ?m; an eutectic melting agent; and a carbon powder are mixed to obtain a mixture thereof, and reductively nitriding the mixture by firing at a higher temperature than a melting point of the eutectic melting agent, while maintaining a nitrogen ratio within a range of 60 to 85 vol % in an atmosphere of mixed gases of nitrogen and carbon monoxide until a nitriding ratio of the alumina powder reaches at least 50%.

Abstract: Embodiments of a layered-substrate comprising a substrate and a layer disposed thereon, wherein the layered-substrate is able to withstand fracture when assembled with a device that is dropped from a height of at least 100 cm onto a drop surface, are disclosed. The layered-substrate may exhibit a hardness of at least about 10 GPa or at least about 20 GPa. The substrate may include an amorphous substrate or a crystalline substrate. Examples of amorphous substrates include glass, which is optionally chemically strengthened. Examples of crystalline substrates include single crystal substrates (e.g. sapphire) and glass ceramics. Articles and/or devices including such layered-substrate and methods for making such devices are also disclosed.

Abstract: A population of light-emissive nitride nanoparticles has a photoluminescence quantum yield of at least 10% and an emission spectrum having a full width at half maximum intensity (FWHM) of less than 100 nm. One suitable method of producing light-emissive nitride nanoparticles comprises a first stage of heating a reaction mixture consisting essentially of nanoparticle precursors in a solvent, the nanoparticle precursors including at least one metal-containing precursor and at least one first nitrogen-containing precursor, and maintaining the reaction mixture at a temperature to seed nanoparticle growth. It further comprises a second stage of adding at least one second nitrogen-containing precursor to the reaction mixture thereby to promote nanoparticle growth.

Abstract: Flexible semiconductor devices based on flexible freestanding epitaxial elements are disclosed. The flexible freestanding epitaxial elements provide a virgin as grown epitaxy ready surface for additional growth layers. These flexible semiconductor devices have reduced stress due to the ability to flex with a radius of curvature less than 100 meters. Low radius of curvature flexing enables higher quality epitaxial growth and enables 3D device structures. Uniformity of layer formation is maintained by direct absorption of actinic radiation by the flexible freestanding epitaxial element within a reactor. In addition, standard post processing steps like lithography are enabled by the ability of the devices and elements to be flattened using a secondary support element or vacuum. Finished flexible semiconductor devices can be flexed to a radius of curvature of less than 100 meters. Nitrides, Zinc Oxides, and their alloys are preferred materials for the flexible freestanding epitaxial elements.

Abstract: The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of protecting the substrate surface comprises forming a passivating layer on at least a portion of the substrate surface by performing a wet etch, which can comprise the use of one or more organic compounds and one or more acids. The invention also provides aluminum nitride substrates having passivated surfaces.

Abstract: Method for performing a HIPIMS coating process, whereby a minimal distance 5 between target and substrate is reduced till achieving an essentially maximal bias current at substrate during coating process, and thereby improving considerably coating quality and increasing deposition rate in comparison with conventional HIPIMS coating processes.

Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104cm?3.

Abstract: The present invention relates to a method for preparing nitride nanomaterials, including: providing a first precursor and a second precursor, in which the first precursor is a transition metal precursor, a group IIIA precursor, a group IVA precursor or a mixture thereof, and a second precursor is a nitrogen-containing aromatic compound; and heating the first precursor with the second precursor to form a nitride nanomaterial. Accordingly, the present invention provides a simpler, nontoxic, more widely applied and low-cost method for preparing nitride nanomaterials.

Abstract: A sintered aluminum nitride substrate having a thermal conductivity of about 60 W/m-K to about 150 W/m-K, a flexural strength of about 200 MPa to about 325 MPa, a volume resistivity of greater than 1010 Ohm cm, a density of at least about 95% of theoretical, optionally at least 97%, and a reflectance factor of at least about 60% substantially over the wavelength range of 360 nm to 820 nm. A low temperature process for sintering aluminum nitride includes providing an AlN sintering formulation of AlN powder and a sintering aid of yttria, calcia, and optionally added alumina, forming the AlN sintering formulation into a green body, and sintering the green body at a temperature of about 1675° C. to 1750° C.

Abstract: Provided is a silver-supported alumina catalyst for reducing nitrogen oxides using ethanol, which has the drawbacks of the conventional silver-supported alumina catalysts improved, has high performance, is not likely to deteriorate over time, and has excellent initial performance and durability. A catalyst for purifying nitrogen oxides, which purifies nitrogen oxides in exhaust gas using an alcohol as a reducing agent, and contains alumina, aluminum sulfate and silver as main components.

Abstract: A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an ?-? phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.

Abstract: [Problem] To provide a method of producing aluminum nitride that has high conducting property and can be excellently filled and is useful as a filler for heat-radiating materials, and an aluminum nitride powder obtained by the same method. [Means for Solution] An aluminum nitride powder is produced by reducing and nitriding: an alumina powder or a hydrated alumina powder having a primary grain size of 0.001 to 6 ?m; and a powder of a compound containing a rare earth metal element and having an average grain size in a range of 2 ?m to 80 ?m, the average grain size being not less than 6 times as great as the primary grain size of the alumina powder or the hydrated alumina powder; in the presence of a carbon powder at a temperature of 1620° C. to 1900° C. for not less than 2 hours.

Abstract: The present invention relates to a manufacturing method of a composite substrate. The method includes the steps of: providing a substrate; providing a precursor of group III elements and a precursor of nitrogen (N) element alternately in an atomic layer deposition (ALD) process or a plasma-enhanced atomic layer deposition (PEALD) process so as to deposit a nitride buffer layer on the substrate; and annealing the nitride buffer layer on the substrate at a temperature in the range of 300° C. to 1600° C.

Abstract: To provide a method of producing a spherical aluminum nitride powder which has a large thermal conductivity and excellent filling property, and is useful as a filler for heat-radiating materials. [Means for Solution] The spherical aluminum nitride powder is produced by reductively nitriding a mixture of 100 parts by mass of an alumina or an alumina hydrate, 0.5 to 30 parts by mass of a rare earth metal compound and 38 to 46 parts by mass of a carbon powder at a temperature of 1620 to 1900° C. for not less than 2 hours.

Abstract: [Problems] To provide a spherical aluminum nitride powder that features high thermal conductivity and filling property, and that is useful as a filler for a heat radiating material, and a method of producing the same. [Means for Solution] A spherical aluminum nitride powder comprising aluminum nitride particles having an average particle diameter of 3 to 30 ?m, a sphericalness of not less than 0.75, and an oxygen content of not more than 1% by weight wherein, when the average particle diameter is d (?m), the specific surface area S (m2/g) satisfies the following formula (1), (1.84/d)?S?(1.84/d+0.

Abstract: A method for manufacturing a nanoscale cage of a material suitable for forming a molecular layer, including a step of shaping and packaging an object in the general shape of a revolving cylinder, the shaping and packaging step being adapted according to the position of the value of the diameter of the revolving cylinder relative to a threshold below which a folding of the ends of the cylinder is promoted.

Abstract: A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

Abstract: Disclosed is a method for removing oxygen from aluminum nitride by carbon. At first, an oven is provided. An aluminum nitride substrate is located in the oven. Nitrogen is introduced into the oven to form an atmosphere of nitrogen. The temperature is increased to the transformation point of the aluminum nitride substrate in the oven. Then, the heating is stopped and quenching is conducted in the oven. Carbon is introduced into the oven in the quenching. Thus, oxygen included in the aluminum nitride substrate reacts with the carbon to produce carbon monoxide or carbon dioxide. The carbon monoxide or carbon is released from the oven as well as the nitrogen. Thus, the aluminum nitride substrate is purified.

Abstract: Disclosed is a method for removing oxygen from aluminum nitride by carbon. At first, an oven is provided. An aluminum nitride substrate is located in the oven. Nitrogen is introduced into the oven to form an atmosphere of nitrogen. The temperature is increased to the transformation point of the aluminum nitride substrate in the oven. Then, the heating is stopped and quenching is conducted in the oven. Carbon is introduced into the oven in the quenching. Thus, oxygen included in the aluminum nitride substrate reacts with the carbon to produce carbon monoxide or carbon dioxide. The carbon monoxide or carbon is released from the oven as well as the nitrogen. Thus, the aluminum nitride substrate is purified.

Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.

Abstract: A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single crystal grows in a growth direction oriented parallel to the longitudinal mid-axis by deposition on the AlN seed crystal. The crucible has a lateral crucible inner wall extending in the growth direction, a free space being provided between the AlN seed crystal and the growing bulk AlN single crystal on the one hand, and the lateral crucible inner wall on the other hand. Bulk AlN single crystals and monocrystalline AlN substrates produced therefrom are therefore obtained with only few dislocations, which furthermore are substantially distributed homogeneously. The growing crucible, inside which the crystal growth region is located, is an inner growing crucible which is arranged in an outer growing crucible.

Abstract: A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion in chamber. Then, by heating material to be sublimated, a material gas is deposited on the other side of heat-shielding portion in chamber so that a Group III nitride semiconductor crystal is grown.

Abstract: [Problems] To provide a process capable of efficiently producing a spherical aluminum nitride powder having a size most suited for use as a filler, and having a high sphericalness and a large particle strength. [Means for Solution] A spherical aluminum nitride powder is produced by using a spherical granulated product of an alumina powder or an alumina hydrate powder as a starting material, and feeding the spherical granulated product to the step of reductive nitrogenation so as to be reductively nitrogenated.

Abstract: An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.

Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.

Abstract: Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible. The seed crystal is placed so as to face the aluminum nitride raw material. The crucible includes an inner crucible and an outer crucible. The inner crucible stores the aluminum nitride raw material and the seed crystal inside the inner crucible. The inner crucible is also corrosion resistant to a sublimation gas of the aluminum nitride raw material. The inner crucible includes either, a single body of a metal having an ion radius larger than an ion radius of an aluminum, or includes a nitride of the metal. The outer crucible includes a boron nitride. The outer crucible covers the inner crucible.

Abstract: Methods of preparing polycrystalline aluminum nitride materials that have high density, high purity, and favorable surface morphology are disclosed. The methods generally comprises pressing aluminum nitride powders to form a slug, sintering the slug to form a sintered, polycrystalline aluminum nitride boule, and optionally shaping the boule and/or polishing at least a portion of the boule to provide a finished substrate. The sintered, polycrystalline aluminum nitride materials beneficially are prepared without the use of any sintering aid or binder, and the formed materials exhibit excellent density, AlN purity, and surface morphology.

Abstract: The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract: There are provided an aluminum nitride film and a substance, coated with such a film; the film is new in that it has a brightness or lightness L* of 60 or lower; preferably the film has a transmittance of 15% or lower for a visible and near infrared radiation having a wave length of 0.35-2.5 micrometers, the combined concentration of metallic elements as impurities but for Al is 50 ppm or smaller, and the film is heat-treated at a temperature of 1050 degrees centigrade or higher but lower than 1400 degrees centigrade, and the film is a product of CVD method; the substance coated with the film is preferably a ceramic material such as a nitride, an oxide, and a carbide or a metal having a low thermal expansion coefficient such as tungsten, molybdenum and tantalum.