Abstract: Apparatus for semi-sealed diffusion of semiconductor materials includes a quartz tube with a quartz stopper at one end to facilitate the loading and unloading of semiconductor materials, the other end of the quartz tube having an inlet passage with a quartz stopcock. The stopper includes quartz pressure release valve.The process involves loading semiconductor material to be diffused into the tube with a source of diffusion. The semiconductor material, e.g., in the form of wafers, is first coated with an oxide layer. The stopper is inserted to seal the tube, the interiors being then purged with an inert gas supplied to the inlet passage which is subsequently closed prior to placing the tube in a furnace to initiate the diffusion process. After diffusion, the ampoule is quenched, the stopper removed and the tube unloaded. The oxide layer is then stripped off revealing a diffused, damage-free surface.

Abstract: A temperature sensing device and a method of forming it is disclosed. A first film or coating of an adherent electro-conductive metallic oxide is applied over the exterior surface of a dielectric substrate. The metal oxide coating is thereafter thoroughly cleansed and a second coating or layer of a metal having a relatively high temperature coefficient of resistance is applied over the metallic oxide film so as to form a strong physical bond as well as a chemical bond therebetween. The composite so formed is fired at a temperature up to about 750.degree.C. If desired, the metal layer is thereafter suitably spiralled to provide the desired resistance and terminal leads are attached to the element. Also, if desired, the element is then coated with a dielectric protective coating.

Abstract: Metal-silicide-silicon Schottky barrier diodes are made by a process which yields the characteristic of low barrier height, in the region of 0.15 volt, suitable for use without dc bias as a detector at microwave frequencies. Low barrier height metals, such as palladium, platinum and hafnium are processed through heat treatment steps which reduce the barrier height below that which is typical of point contact diodes.

Abstract: A magnetic transducer exhibiting the magnetoresistive (MR) effect is made by depositing at least two thin film layers. An MR film placed in electrical contact with a higher resistivity layer is magnetically biased by a portion of the MR sense current shunted through the nonmagnetic layer.

Abstract: This invention relates to an improvement in the process for the production of a copper coating on a shaped plastic support in which copper is vapor-deposited in a high vacuum on the surface of the plastic support, the improvement comprising coating said surface, prior to the vapor-deposition of copper, with a layer of a conducting substance in a quantity such that the surface resistance is in the range of about 1 to less than 10.sup.12 ohm.

Abstract: A process of preparing a nickel secondary electron emissive conductive cong along the interior channel walls of a microchannel plate or by continuing the process of preparing a solid nickel conductor channel to provide a conductive panel and the apparatuses resulting therefrom. The microchannel plate is positioned in a heated oven, or deposition chamber, such that heated inert gases are forced through the open channels to stabilize the channel temperature. The temperature is then lowered and a nickel compound gas is mixed with the inert gas. The gas mixture is forced through the channels to decompose the microchannel plate material and deposit a thin nickel coating on the interior channel walls. If a conductive panel is desired, the process is continued until the entire channel is completely filled with nickel.

Abstract: The present invention relates to a liquid crystal display cell having an alignment film therein. The present invention also relates to a method of aligning liquid crystal molecules in a selected direction in a liquid crystal display cell. An alignment film whose film growth is oriented in the same direction is deposited on an electrode film of a liquid crystal cell. The alignment film is used to align the molecules of a liquid crystal material. The film growth sympathetically aligns the molecules of liquid crystals in the direction of the film growth. A liquid crystal display cell which has two such alignment films therein is used to form a polarizing liquid crystal display cell.

Abstract: A method of making a photosensitive imaging device which comprises; vacuum evaporating a thin layer of vitreous selenium onto a supporting substrate, forming a relatively thicker layer of electrically active organic material over said selenium layer, followed by heating said device to an elevated temperature for a time sufficient to convert the vitreous selenium to the crystalline trigonal form. The imaging device is also disclosed.

Abstract: Stress free films of metals, semi-conductors and insulators which have a very uniform thickness and composition and which are supported independent of a substrate, and the method of forming same. Such films have wide application for reflection of light as mirrors and transmission or absorption of light in the form of filters throughout the complete optical spectrum. Also, such films may be used for the study of fundamental properties of the material in question.

Abstract: This invention relates to an improvement in the process for the production of a copper coating on a shaped plastic support in which copper is vapor-deposited in a high vacuum on the surface of the plastic support, the improvement comprising coating said surface, prior to the vapor-decomposition of copper, with a layer of a conducting substance in a quantity such that the surface resistance is in the range of about 1 to less than 10.sup.12 ohm.

Abstract: A technique for the fabrication of thin film electrets designed for use in electroacoustic transducers involves depositing a thin film of aluminum or titanium upon a perfluorinated foil and etching away the film prior to deposition of gold. The resultant structure evidences superior adhesion characteristics and electrical characteristics comparable to those previously described.

Abstract: A layer of unoxidized metal is provided on surfaces of the device in such manner as to possess an oriented microstructure capable of causing sympathetic alignment of the liquid crystal molecules. The metal layer is thereafter heated in the presence of oxygen, preferably in a device envelope sealing process, to oxidize the metal layer. The metal oxide layer is stable, in that it retains the molecular aligning characteristic, and is more transparent than the metal layer.

Abstract: An improved thick film resistor for use with variable resistor applications includes a gold overlay applied to the contact surface of the thick film resistor after first etching the contact surface with acid. The combination of the gold overlay and acid etching of the contact surface reduces contact resistance and the contact resistance variation and provides improved wear resistance of the contact surface in a variable resistor element.

Abstract: A highly piezoelectric polyvinylidene fluoride element is prepared by treating a polyvinylidene fluoride film having an infrared absorbance ratio D.sub.530 /D.sub.510 of not more than 1.2, namely having a major proportion of .beta.-type crystal structure, at a temperature of at least 40.degree.C but below the melting point of the film while applying to the film a direct current voltage of 200 KV/cm to 1,500 KV/cm. The polyvinylidene fluoride film having a major proportion of .beta.-type crystal structure may be obtained by stretching a fabricated article of polyvinylidene fluoride having a major proportion of .alpha.-type crystal structure under specific conditions.