Abstract: An improved electroluminescent display panel having an X-Y array of display elements upon a planar insulating substrate. Integral thin film transistor circuit elements and drive signal buses are interconnected on the panel with individual electroluminescent electrodes covering a large area of the panel to increase the active display area. The electroluminescent electrode is a multilevel electrode with a first level portion disposed on the insulated substrate, a second level electrode portion disposed over an insulative polymerized layer which covers the thin film circuit areas and the drive signal buses, and a connecting electrode portion which extends between the first and second level electrode portions.

Abstract: A short gate field effect transistor having a gate on the bottom of a recess in a body of semiconductor material with the source and drain being on the surface of the semiconductor body at opposite sides of the recess is made by providing a metal film on the surface of the semiconductor body with the metal film having an opening therein. A recess is formed in the portion of the semiconductor body in the opening in the metal film. While protecting the bottom portion of the recess, metal films are plated up on each side of the recess until the spacing between the metal films across the recess is equal to the desired length of the gate. The gate is then deposited on the bottom of the recess using the plated metal films as a mask to control the length of the gate.

Abstract: A polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO), over which a nickel metal thin-film is laid down in a spiral or serpentine pattern, taking up a desirably small area, but at the same time giving a high electrical resistance. Finally, a cover or protective layer of silicon monoxide is then deposited over the resistor, serving to protect it from the possibility of outside contamination.

Abstract: A valve metal anode, for electrolytical processes, having an electron-active covering layer, is prepared by anchoring electron-activating substances, counteracting passivation of the anode, in a sintered porous carrier layer of valve metal. The carrier layer which is sintered onto the cleaned valve metal base may consist of a powder of the same metal or of the crystallographically similar metal. The infusion of the active substances into the carrier layer can be accomplished by impregnating and drying or baking the active substances, by precipitating them from the vapor phase, galvanically, or from the gaseous phase. The active substances may also be ingredients of the sinter mixture.

Abstract: An improved ion-sensitive electrode is described, particularly in terms of the structure of a pH electrode and first and second processes for making the same. The pH electrode includes a substrate, preferably of forsterite, which is configured as a wafer having a substantially planar wafer surface. A continuous conducting layer, formed by either thin-film vapor deposition or thick-film screening processes, is formed on the substantially planar wafer surface in a desired configuration. A first region of the continuous conducting layer, and contiguous portions of the substantially planar wafer surface, are covered by a continuous membrane layer preferably composed of a pH-sensitive glass such as Corning Code 0150 glass.

Abstract: The provision of a supplementary layer of nickel by an electroless process in order to provide solder wetting capability for a tempered aluminum-nickel metallization is made unnecessary by causing the layer of nickel deposited on an underlying aluminum metallization layer to have a thickness between 0.6 and 1.0 .mu.m and by conducting the subsequent tempering operation between 400 and 480.degree. C, preferably 475.degree. C, for a period of between 10 and 20 minutes, preferably 15 minutes. In order to provide high transverse conductivity, the aluminum layer should have a thickness between 3 and 10 .mu.m. The process is useful in the manufacture of semiconductor devices as well as for making electrical devices based on an insulating substrate.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing air into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing oxygen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposite a film of Nb.sub.3 Ge on the heated substrate.

Abstract: Electrically conducting components of sodium/sulfur batteries subject to the corrosive attack of the cell reactants are protected by aluminiding to provide a conductive, protective coating of a metal aluminide. The protective coating finds particular application in the metal conducting container forming the sulfur compartment, where the metal aluminide reacts with the sulfur and sodium polysulfide to form a protective, doped, aluminum sulfide coating, which is conductive due to the presence of the metal from the container.

Abstract: A method for metallizing a phosphor screen for a cathode ray tube including the steps of forming a volatilizable substrate on the surface of the phosphor screen and depositing a metal layer on the substrate, followed by heating for volatilizing the substrate, said substrate comprising a laminate of superposed layers respectively representing different organic materials having different thermal decomposition points. This disclosed method is advantageous in that the substrate can be volatilized without causing blistering of the metal layer and the formed metal layer is enabled to reflect light more effectively.

Abstract: A display device includes a layer of electroluminescent material which is capable of conducting electric current. The electroluminescent material is sandwiched between a pair of electrodes to which a voltage is to be applied to excite the electroluminescent material to luminescence. The display device is manufactured by disposing on an assembly comprising a substrate with one of the said electrodes thereon, two masks in which are formed aligned apertures defining a region in which the electroluminescent material is to be provided. The electroluminescent material is disposed in the apertures, and, after that material has solidified one of the masks is removed, the other of the electrodes then being formed on the exposed surface of the electroluminescent material and within slots in the remaining mask and the mask is removed.

Abstract: Vacuum deposition method for adjusting the resonant frequency of piezoelectric resonators wherein the speed and accuracy of the process are enhanced by abrupt termination of the deposition through injection of a gas into the vacuum chamber at the end of the adjustment cycle.

Abstract: A process for producing fine structures having an order of magnitude of 1 .mu.m without a loss of dimension relative to a mask on a base such as a semiconductor device having electrode structures characterized by providing a base having a surface which is either etchable or is provided with an auxiliary etchable layer, providing a mask on the surface, which mask has openings corresponding to the fine structure of material to be applied on the surface, providing an etching agent which attacks the surfaces of the base without attacking the mask, etching the uncovered portions of the base until an under-etching of predetermined width exists beneath the edges of the mask, depositing the layer of material on the entire surface, controlling the amount of depositing so the layer of material being deposited on the mask and on the etched surfaces of the base are not in contact with each other, and subsequently removing the mask with the layer of material deposited thereon.

Abstract: A film laminate having low surface resistivity, high abrasion resistance, and high light transmission includes a polymeric substrate layer and a transparent metal layer bonded to the substrate by a polymeric coupler. A polymeric coating is applied over the metal layer.

Abstract: A solid electrolyte sensor for sensing oxygen in exhaust gases having a solid electrolyte body of a thimble-like design with an inner conductor thereon and a nonreactive but compatible bonding layer of magnesium or calcium oxide over the outer surface of the electrolyte body and a conductive catalyst layer superimposed on the bonding layer.

Abstract: A novel light scattering reflector and methods of making and using it are disclosed. The reflector, which can advantageously be used in conjunction with liquid crystal displays, includes a layer carrier formed of glass or rigid PVC foil. The layer carrier is roughened by sandblasting, impressing with a grooved die, or by other techniques to provide an irregular surface. A reflective metal coating is subsequently evaporated onto the roughened surface to complete the reflector structure. Auxiliary materials may also be coated onto the layer carrier to improve the characteristics of the device.

Abstract: A thin film strain gauge fabricated by depositing a first film of a high temperature insulating material upon a surface of an article to be tested, depositing both a thin film of a resistive material and a conducting lead in connection with each end of the resistive pattern upon the surface of the first film and overcoating the resistive strain gauge film and at least a portion of the conducting leads with a second film of high temperature insulating material to protect the strain gauge against corrosion and erosion in its operating environment.

Abstract: Articles exhibiting a micropattern carried by a surface of a support, typically microdevices comprising a micropattern of a functional material on or in a substrate of a dissimilar material, are produced by a method employing a microsubstrate comprising a substrate base, a protein layer which comprises at least a compressed monolayer of a denatured non-fibrous protein on the base, and a masking film overlying the protein layer, the material of the masking film being such as to be modified by radiant energy so as to be removable from the protein layer where irradiated. The method is flexible in the sense that it is possible to proceed via either a positive or a negative of the desired micropattern and to build a more extensive, or more complex, micropattern from an initial relatively simple micropattern.

Abstract: A new, useful and nonobvious process is disclosed wherein vapor phase controlled stoichiometry is employed to obtain compound semiconductor films having large crystallite textures. The process has been found to be particularly useful in the formation of compound semiconductor films where one of the components is a high vapor pressure element and the substrate material is amorphous.

Abstract: This invention provides a method for forming a dense, electrically conductive, metallic coating having a sufficient adherence without use of an adhesive on an insulating film, sheet, or plate such as plastic film, plastic rigid sheet, or ceramics by the cluster ion plating procedure which comprises heating a crucible containing a vapor deposition metal at a temperature of 200.degree. to 2,500.degree. C in a vacuum of 1 .times. 10.sup.-4 Torr. to 1 .times. 10.sup.-7 Torr.

Abstract: An improved method for providing electrical conductive paths in a Dewar flask is disclosed. A thin metal film is deposited over the side and top of the inner flask of the Dewar. Portions of the metal film are then selectively removed to provide electrical conductive paths which extend from the side on to the top of the inner flask.

Abstract: A battery plate is disclosed having a core of aluminum, for example, which has its oxide coating removed and replaced by a thin film of lead. Such a plate has a higher conductivity and is lighter in weight with superior performance characteristics than a conventional lead-antimony plate.

Abstract: Electrical contacts are produced by processes comprising (1) forming on a metallic body a first layer of low melting metal(s) and (2) forming on the first layer a second layer of high melting metal(s). The thus produced contacts possess prolonged life, approximately 10 times that of conventional contacts when they are operated as working contact.

Abstract: The process by which this device is made comprises the implantation of ions into an insulator. Surface charge on the insulator is discharged during implantation by an electron beam or by a thin conductive surface layer previously deposited on the insulator. Ion energy and dose are selected to embed ions into the insulating lattice to a sufficiently high local concentration to produce a zone of lower resistance which is the implanted zone. The dosage which presently appears to be a minimum dosage for providing a conductive zone in the insulative body is the order of 10.sup.18 ions per square centimeter. Beam currents upward from 10 microampers per centimeter square implanted areas are satisfactory.

Abstract: A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition rates are used to minimize aluminum oxide contamination. High yield is achieved by forming the beam leads to have an elevated cantilevered configuration, by deep scribing of the wafer and, when desired, by providing an energy absorbing cushion to reduce the effect of collisions between chip edges and beam leads.

Abstract: A method for preparing superconductive Nb.sub.3 Sn layers on niobium surfaces for high frequency applications in which a defined reaction zone which contains a tin source and the niobium surface is formed in an open reaction chamber and sealed off to the extent that, while interfering gases are being drawn off from the reaction zone during the evacuation, the vapor pressure of the tin remains higher within the reaction zone, when heated, than in the rest of the chamber. While pumping continuously, the reaction zone is then heated to a temperature between 930.degree. and 1400.degree. C and held at this temperature until an Nb.sub.3 Sn layer 0.5 to 5 .mu.m thick is formed on the niobium surface.

Abstract: A metalization process for the manufacture of hybrid integrated circuit elements including boards and semiconductors to be attached thereto involves applying to a substrate of insulating material such as aluminum oxide, successive layers of sputtered nickel-chromium and nickel, an electroless deposit of nickel-boron and, frequently, an electro-deposited layer of gold. The assembly is then normally heat-treated to stabilize the resistive layer. The addition of the nickel-boron layer provides many advantages in that reliable low-temperature solder connections may be made to it, ultrasonic wire bonds of high reliability may be accomplished with the usual aluminum wire supplied with most discrete components, the heat-treating step is considerably shortened in time with greater stability of resistance values, and the assemblies thus manufactured are capable of operating in comparatively high-temperature environments.

Abstract: A method of preparing photodetector array elements from a body of photodetector material wherein conductive layers of a metal are formed on selected portions of a substrate, the conductive layers are coated with a photoresist material, an adhesive layer is deposited on the photoresist and the remaining substrate, a body of photodetector material is bonded to the adhesive, and individual photodetector elements are delineated from the body to form the elements of the array and to expose the edges of the photoresist material, and the photoresist layer and material deposited thereon are removed.

Abstract: The adherence of thin-film conductors to supporting substrates, and therefore the strength of external lead bonds made to the conductors, is increased by forming the conductors first and then heat treating them in air. The conductors may be formed from layers of titanium, palladium and gold sequentially deposited on the substrate or, in order to reduce the amount of gold, a portion of it may be replaced by copper and nickel.

Abstract: A microstrip board comprising a gold film which contains about at least 1/2 weight per cent of aluminum bonded to a non-electrical conducting oxide is prepared by simultaneously evaporating the gold and aluminum onto the non-electrical conducting oxide and thereafter optionally heating the film thus formed.

Abstract: A method of manufacturing a thin-film electrode constituting a multi-layer electrode structure supported at an electrically insulating surface of a supporting element, comprising: a first step of depositing a thin-film layer on said surface and, in succession a second step of depositing an additional thin-film layer on top of the previously deposited thin-film layer, said second depositing step being carried out at least once, and the last one of the depositing steps being carried out in a vacuum chamber under reduced pressure of a residual gas.

Abstract: An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.

Abstract: There is disclosed a method of forming a continuous, thin film of stoichiometric metal hydride such as titanium dihydride, titanium dideuteride, or titanium ditritide on a substrate which may be of metal, glass or the like. The substrate is first cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system vapor deposition by a sublimator or vaporizer first coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate.After the hydride forming metal coating is formed, a deuterium or other hydrogen isotopes are bled into the vacuum system and diffused into the metal film or coating to form a hydride of metal film. Higher substrate temperatures and pressures may be used if various parameters are appropriately adjusted.

Abstract: Bulk coatings of Nb.sub.3 Ge superconductors having transition temperatures in excess of 20 K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl.sub.5 and GeCl.sub.4 in the presence of hydrogen. The NbCl.sub.5 vapor may advantageously be formed quantitatively in the temperature range of about 250.degree. to 260.degree. C by the chlorination of Nb metal provided the partial pressure of the product NbCl.sub.5 vapor is maintained at or below about 0.1 atm.

Abstract: A process is described for producing a composite metal film in which metalliferous particles and polymer particles are co-deposited on a substrate, the proportion of metalliferous particles being such that the metal film is discontinuous, the metal particles being present in the form of islands with intervening zones of polymeric material. The resulting composite films have negative temperature coefficient of resistance. The process may be applied to the production of semiconductor composite films, e.g., copper oxide films by means of an annealing oxidative treatment to convert metal to metal oxide before loss of polymeric matrix by oxidation or evaporation.

Abstract: A method of metallizing a screen with a luminescent layer. The method comprises the following steps: providing a film that can be fired. Blasting parts of the film projecting beyond the luminescent layer with a fine-granular material, metallizing the film, firing the film. The said blasting prevents blisters and chips from forming in the metallization.

Abstract: An evaporated multilayer solderable low resistance contact for N-type and P-type regions on a semiconductor body comprising an aluminum layer directly on the semiconductor body, an evaporated manganese layer on the aluminum layer and an evaporated nickel layer on the manganese layer.

Abstract: On an aluminum oxide or high-alumina ceramic substrate an intermediate layer of a rare earth, titanium or iron oxide or a mixture of such oxides is provided for matching the thermal expansion coefficient of the substrate to that of a platinum layer between 0.1 and 10 .mu. m thick applied in a resistor pattern configuration on the surface of the intermediate layer. The intermediate layer, unlike a glass embedding layer, allows heat treatment of the platinum layer by heating the entire structure makes it possible to avoid the embedding to heal local defects, without impairing the integrity of the structure (which occur when glass melt) and without co-crystallizing with aluminum oxide. The platinum layer thickness is consistent with stability of the specific resistance and the temperature coefficient of resistance.

Abstract: A method and device for obtaining uniform vapor deposition of one or more inorganic metallic photoconductive materials onto a substrate by importing under vacuum a slow translational movement of one or more heated crucibles and/or of the substrate being coated.

Abstract: The invention discloses a technique for fabricating an amorphous (i.e., non-crystalline) bubble device which enables high quality permalloy films for drive circuits and magneto-resistors to be deposited without destroying the magnetic properties of the amorphous film.

Abstract: A process for the manufacture of electroconductive non-woven fabrics which comprisesA. cleaning the fabrics with a polar organic solvent and, after elimination of the solvent,B. sensitizing them with an aqueous hydrochloric acid solution of tin-II chloride,C. activating them with an aqueous hydrochloric acid solution of palladium chloride, andD. treating them with a mixture of a tenside-free binder dispersion and a metastable aqueous metal salt solution, and subsequently drying them; the fabrics being rinsed with water after each of the steps (b) and (c) is provided.

Abstract: An arrangement of thin film resistive layers for hybrid microcircuits that liminates electrical contact problems and provides a means for obtaining high precision by trimming. A thin resistive film is deposited on an insulating substrate over a mask. Without breaking vacuum, a second resistive film which is not subject to oxidation is deposited over the first resistive film. The second resistive film is then etched away from portions which are not used as contact points. Since the second resistive material has a different resistivity, it is also used for low value resistive portions in multiple resistor networks.

Abstract: A method of mounting thin film photodiodes to a cryogenic cold finger in ch the photodiode uses opaque metal Schottky barrier contacts to form the active regions of the photodiode. The method comprises laying a mirrored surface on one side of a radiation transparent substrate with the thin film photodiode on the other side of the substrate and the plurality of metal Schottky barrier contacts on the photodiode. The mirrored side of the substrate is mounted to the cold finger and reflects incoming radiation off the mirrored surface back to the active area of the photodiode.

Abstract: A glass body having a fluorescent pattern inwardly of a surface thereof is formed by depositing a first material in a predetermined pattern on a surface of glass containing readily ion-exchangeable first ions, the first material containing second ions capable of ion-exchange with the first ions, one of the glass and the first material containing ions for providing a fluorescence center, and by causing the second ions to penetrate into the glass through ion-exchange with the first ions so that the fluorescence-center providing ions may be distributed in a pattern which is in positive or negative relationship with the predetermined pattern.

Abstract: A technique for the fabrication of thin film electrets designed for use in electroacoustic transducers involves depositing a thin film of titanium upon a perfluorinated foil and, subsequently, depositing a layer of gold thereon. The resultant structure evidences adhesion characteristics which are superior to those described heretofore for metallized foils and electrical characteristics comparable to those previously described.

Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.

Abstract: A substrate to be coated and a measuring body are simultaneously coated with a conductive coating. The measuring body includes two surfaces separated by insulating material and transversely spaced a predetermined distance. One surface extends over the other surface. The surfaces defining the predetermined distance are each metallized and provided with electrical connections. The deposition is terminated when the conductive coating fills the predetermined distance between the surfaces.

Abstract: Gold alloy bumps are built up upon conductive pads formed upon electronic chips. The bumps are thereafter aligned with conductive portions of a generally larger substrate to which the chips are to be electrically connected. The bumps are produced by either vacuum evaporating or plating metallic layers over the conductive chip pad areas wherein certain layers within the bumps are formed of magnetic metals such as cobalt or nickel cobalt alloys. Metallic layers of gold and alloying metal are evaporated or plated over the deposited magnetic metals to complete the formation of the bumps. The chips are thereafter subjected to a sufficient amount of heat to cause the bumps to flow, thereby to form a reliable electrical connection between the chips and the substrate. The magnetic materials formed within the bumps result in ease of transporting and manipulating the chips for further processing by means of magnetic plates or other pickup devices.

Abstract: A method of producing a conductor for a superconducting cable or the like is disclosed. The conductor is made up of at least niobium and copper of which the copper is an electrically normal-conducting metal. The method includes heating a niobium carrier to a temperature between 150.degree. and 800.degree.C in a vacuum having a residual gas pressure of at most 10.sup.-.sup.4 Torr, and evaporating copper unto the niobium carrier to form a tightly adhering copper layer thereon. If required, the conductor can be produced to include other electrically normal-conducting metals.