Abstract: A substrate processing apparatus includes a suctioning unit for suctioning a processing liquid existing inside a processing liquid pipe that communicates with a discharge port, and a controller. In the suctioning step, the controller executes a suctioning step of suctioning the processing liquid existing inside the processing liquid pipe by the suctioning unit. The controller selectively executes a first suctioning step of retracting a leading end surface of the processing liquid and disposing the leading end surface of the processing liquid after suctioning in a preliminarily set standby position inside the processing liquid pipe, and a second suctioning step of retracting the leading end surface of the processing liquid further back than the standby position.

Abstract: A substrate processing device includes a holding member for holding a substrate, and an opposed member having a body portion and an extended portion extending from at least a part of a peripheral edge part of the body portion. A protrusion is provided on one part of a tip side part of the extended portion and a side surface part of the holding member, and the other part is provided with a restricting structure disposed opposite to the protrusion and restricting relative motion of the protrusion. The relative motion between the holding member and the opposed member is restricted, and the substrate processing device further includes a rotating mechanism, and a nozzle for discharging a processing solution and the protrusion and the restricting structure are disposed below an upper surface of the holding member.

Abstract: User profiles of applications installed in a user environment, which may be compromised by malware, are managed to protect against such malware gaining access to sensitive data that may be contained in the user profiles. The method includes the steps of detecting, by a management agent of a user environment, a launch of an application within the user environment, verifying, by a filter driver, an identity of the application against a stored profile of the application, and responsive to determining that the identity of the application matches the stored profile of the application, importing, by the management agent, an encrypted user profile from a remote storage to local storage, decrypting, by the filter driver, the encrypted user profile, and providing the decrypted user profile to the application.

Abstract: An imprinting method includes dispensing a first liquid on a first region of a substrate. The first liquid is a photocurable resist precursor. A second liquid is dispensed on a second region of the substrate. The second region is adjacent to and surrounding the first region. The second liquid is non-photocurable as dispensed. The first region is then irradiated with light while a patterned template is being pressed against the first liquid. The light cures the first liquid and forms a resist pattern corresponding to the patterned template. The patterned template and the substrate are then separated from each other. The second liquid is then selectively removed from the substrate while leaving the resist pattern on the substrate.

Abstract: A coating assembly for coating a plurality of substrates. The coating assembly includes a chamber. At least one target is disposed in the chamber and includes a coating material. At least one power supply is connected to the target. At least one support fixture is disposed in the chamber. The at least one support fixture includes a base having a plurality of recesses formed in an upper surface of the base. A first mounting component has a plurality of slots. The first mounting component is positioned on the upper surface of the base wherein at least some of the plurality of recesses are in registry with corresponding ones of the plurality of slots to define a plurality of cavities, each of the plurality of cavities configured to hold at least one of the plurality of substrates to be coated.

Abstract: A method for imparting an optical element with at least one light influencing property in a gradient pattern. The method includes (a) providing an optical substrate having first and second surfaces; (b) depositing a first composition over the first surface of the optical substrate so as to provide a first treated surface region and an untreated surface region, the first composition including a material which provides a light influencing property; (c) depositing a second composition over the optical substrate of (b) to provide a second treated surface region over the untreated surface region and over a portion of the first treated surface region to form a first overlap region; and (d) spinning the optical substrate of (c) thereby providing the optical element having a light influencing property in a gradient pattern.

Abstract: A spin-on glass (SOG) depositing system includes a suck back (SB) valve arranged to receive SOG. The SOG depositing system further includes a SOG dispenser having a nozzle, the SOG dispenser coupled with the SB valve for receiving SOG. The SOG depositing system further includes a detector positioned to detect SOG outside the nozzle. The SOG depositing system further includes an SB valve controller coupled with the detector for receiving one or more signals from the detector and coupled with the SB valve for controlling operation of the SB valve, wherein the SB valve controller is configured to pause sensing by the detector based on the sensed amount of SOG outside the nozzle being outside at least one operating parameter.

Abstract: A cleaning module for cleaning a wafer comprises a wafer gripping device configured to support a wafer in a vertical orientation and comprises a catch cup and a gripper assembly. The catch cup comprises a wall that has an annular inner surface that defines a processing region and has an angled portion that is symmetric about a central axis of the wafer gripping device. The gripper assembly comprises a first plate assembly, a second plate assembly, a plurality of gripping pin, and a plurality of loading pin. The gripping pins are configured to grip a wafer during a cleaning process and the loading pins are configured to grip the wafer during a loading and unloading process. The cleaning module further comprises a sweep arm coupled to a nozzle mechanism configured to deliver liquids to the front and back side of the wafer.

Abstract: The disclosure relates to a method for coating a substrate with a lacquer. First, the lacquer is uniformly applied to the substrate. Then, the solvent proportion of the lacquer applied to the substrate is reduced, and the coated substrate is exposed to a solvent atmosphere. In some embodiments, the lacquer is heated. The invention also relates to a device for planarising a lacquer layer.

Abstract: An example heat-dissipating device with enhanced interfacial properties generally includes a first heat spreader configured to be thermally coupled to a region configured to generate heat, a second heat spreader, an interposer thermally coupled to at least one of the first heat spreader or the second heat spreader, at least one interfacial layer including a graphene material disposed on at least one surface of the interposer, and a phase change material disposed between the at least one interfacial layer and at least one of the first heat spreader or the second heat spreader and thermally coupled to at least one of the first heat spreader or the second heat spreader.

Abstract: A cleaning module for cleaning a wafer comprises a wafer gripping device configured to support a wafer in a vertical orientation and comprises a catch cup and a gripper assembly. The catch cup comprises a wall that has an annular inner surface that defines a processing region and has an angled portion that is symmetric about a central axis of the wafer gripping device. The gripper assembly comprises a first plate assembly, a second plate assembly, a plurality of gripping pin, and a plurality of loading pin. The gripping pins are configured to grip a wafer during a cleaning process and the loading pins are configured to grip the wafer during a loading and unloading process. The cleaning module further comprises a sweep arm coupled to a nozzle mechanism configured to deliver liquids to the front and back side of the wafer.

Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.

Abstract: A method for coating a top of a substrate with a coating solution includes supplying, before a solution film of the coating solution formed on the substrate dries, a solvent for the coating solution to a peripheral portion on the solution film of the coating solution on the substrate while rotating the substrate at a predetermined rotation speed to form a mixed layer of the coating solution and the solvent at the peripheral portion. The method includes, then, controlling a film thickness of the coating solution after drying by rotating the substrate at a rotation speed higher than the predetermined rotation speed to push the mixed layer to an outer peripheral side.

Abstract: The invention is directed to methods for making an EC material comprising providing a substrate, applying at least one metal linker to the substrate, applying at least one metal-coordinated organic complex to form a layer, washing the layer, drying the layer, and repeating the applying steps to obtain a multiple layer EC material. The invention is further directed to EC materials made by the methods of this invention.

Abstract: The disclosed optical lens assemblies may include a structural support element, a deformable element coupled to the structural support element, and a deformable medium positioned between the deformable element and the structural support element. The deformable element may include a base element that, when deformed, alters an optical property of the optical lens assembly. The deformable element may have a non-uniform stiffness. Related methods of fabricating an optical lens assembly are also disclosed.

Abstract: There is provided a substrate processing apparatus which includes: a rotation holding part configured to hold a substrate and rotate the substrate at a predetermined rotation speed around a rotation axis which extends in a direction perpendicular to a front surface of the substrate; a processing liquid supply part provided with a processing liquid nozzle located in proximity of the front surface and configured to supply a processing liquid onto the front surface from the processing liquid nozzle; a solvent supply part provided with at least one discharge nozzle located in proximity of the front surface and configured to supply an organic solvent onto the front surface from the at least one discharge nozzle; and a controller configured to execute a first process and a second process.

Abstract: In a method of forming a sacrificial film, a liquid film 26 of a sacrificial polymer solution 25 which covers the front surface of a substrate W in which patterns P are formed is heated from the side of the substrate, the solution in contact with the front surface of the substrate is evaporated and thus the liquid film is dried in a state where the liquid film is held on at least tip end portions other than base portions of the patterns, with the result that a sacrificial film is formed. In a substrate processing method and a substrate processing apparatus, the front surface of the substrate is processed while the collapse of the patterns is suppressed or prevented by utilization of the formed sacrificial film.

Abstract: Electronic device processing systems including environmental control of the factory interface, a carrier purge chamber, and one or more substrate carriers are described. One electronic device processing system has a factory interface having a factory interface chamber, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface, the carrier purge chamber, and the one or more substrate carriers and operational to control an environment at least within the factory interface chamber, carrier purge chamber, and the one or more substrate carriers. Methods for processing substrates are described, as are numerous other aspects.

Abstract: The present invention relates to metal complexes, to compositions and formulations comprising these complexes, and to devices comprising the complexes or compositions.

Abstract: A substrate processing device includes a holding member for holding a substrate, and an opposed member having a body portion and an extended portion extending from at least a part of a peripheral edge part of the body portion. A protrusion is provided on one part of a tip side part of the extended portion and a side surface part of the holding member, and the other part is provided with a restricting structure disposed opposite to the protrusion and restricting relative motion of the protrusion. The relative motion between the holding member and the opposed member is restricted, and the substrate processing device further includes a rotating mechanism, and a nozzle for discharging a processing solution and the protrusion and the restricting structure are disposed below an upper surface of the holding member.

Abstract: A self-assembled film-forming composition for orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer including a block copolymer, in the whole surface of a coating film, even at high heating temperatures at which arrangement failure of the microphase separation of the block copolymer occurs. The self-assembled film-forming composition includes a block copolymer, and at least two solvents having different boiling points as a solvent. The block copolymer is obtained by bonding: a non-silicon-containing polymer having, as a structural unit, styrene, a derivative thereof, or a structure derived from a lactide; and a silicon-containing polymer having, as a structural unit, styrene substituted with silicon-containing groups. The solvent includes: a low boiling point solvent (A) having a boiling point of 160° C. or lower; and a high boiling point solvent (B) having a boiling point of 170° C. or higher.

Abstract: According to one embodiment, an imprinting method comprises forming a carbon film on a substrate. The carbon film being oxygen in an amount of less than or equal to 15% by weight. A transfer material is dispensed over the carbon film. A patterned template is brought into contact with the transfer material. The transfer material is cured with light passing through the patterned template. The patterned template is then detached from the cured transfer material.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus according to the exemplary embodiment of the present disclosure may include: a processing liquid supply tube; a nozzle unit which is supplied with a processing liquid from the processing liquid supply tube and discharges the processing liquid to the substrate; and a light source unit which is provided to irradiate the processing liquid discharged from the nozzle unit with ultraviolet rays. According to the present disclosure, the processing liquid, which is electrified while passing the processing liquid supply tube, is irradiated with ultraviolet rays, such that electricity is eliminated from the electrified processing liquid, and as a result, it is possible to minimize a problem that the substrate is contaminated by peripheral particles or arcing occurs on the substrate.

Abstract: A filler solution is supplied to an upper surface of a substrate, forming a coating that is a film of the filler solution. Clearance in the structure on the upper surface of the substrate is filled with the filler solution. Then, a stripping solution is applied to a peripheral region of the upper surface of the substrate, to strip off a portion of the coating formed on the peripheral region. Also, a gas is injected toward a boundary portion between the peripheral region and an inner region of the upper surface of the substrate, to accelerate solidification of an outer edge portion of the coating formed on the inner region, to suppress the spread of the coating from the inner region to the peripheral region. A substrate holder/rotator, fluid supplies, and a gas injection part are provided to carry out the above process.

Abstract: A coating sequence includes supplying a resist liquid onto a wafer under a condition that a liquid puddle of the resist liquid is formed at a central portion thereof; supplying, while rotating the wafer at a first rotation speed where the liquid puddle stays at an inner side than an edge of the wafer, a diluting liquid and moving a supply position of the diluting liquid from an outside of the liquid puddle to an edge portion thereof; moving, after the moving of the supply position from the outside to the edge portion, the supply position from the edge portion to the outside while continuously rotating the wafer at the first rotation speed; and rotating, after the moving of the supply position from the edge portion to the outside, the wafer at a rotation speed higher than the first rotation speed to diffuse the resist liquid toward the edge.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes the following operations. A first semiconductor substrate is provided on a spin chuck. A first humidity factor near the first semiconductor substrate is obtained. A resist material is dispensed on the first semiconductor substrate. The spin chuck is rotated at a first speed. The first speed is determined based on the first humidity factor.

Abstract: The present invention is generally related to various types of compositions that comprise a polyindane resin. In particular, the polyindane resins may be utilized in various polymer-based and elastomer-based formulations in order to enhance several properties and characteristics of those formulations. More specifically, adhesive formulations are provided that comprise at least one polyindane resin, which may be used to replace or enhance the functionality of existing hydrocarbon resins typically used in adhesive formulations. Compositions comprising at least one thermoplastic elastomer and at least one polyindane resin are also provided.

Abstract: A manufacturing process of an elemental chip includes steps of preparing a substrate held on the holding tape, the substrate including first and second sides opposite each other and the second side thereof being held on the holding tape, and the substrate further including a plurality of element regions and a plurality of segmentation regions defining each of the element regions; setting a nozzle to have a length between a lower most edge of the nozzle and the first side of the substrate in a range between 20 mm and 150 mm, spraying a resist solution to form droplets of the resist solution, the resist solution containing a resist constituent and a solvent; forming a resist layer by vaporizing the solvent from the droplets and depositing the resist constituent on the first side of the substrate that is held on the holding tape such that an amount of the solvent remained in the resist layer to be in a range between 5 wt. % and 20 wt.

Abstract: A development liquid is discharged from a development liquid nozzle having one discharge port extending continuously in one direction to the substrate. The development liquid nozzle is fixed such that the development liquid is supplied to a reference straight line on an upper surface of the substrate, and is fixed such that a liquid receiving region that receives the development liquid on the upper surface of the substrate extends in a direction inclined with respect to the reference straight line, the reference straight line passing through a rotational center of the substrate. The development liquid nozzle is moved in a direction of the reference straight line. The liquid receiving region has one end and another end. The other end is located farther away from the rotational center of the substrate than the one end, and is located farther downstream in the rotation direction of the substrate than the one end.

Abstract: Disclosed is a substrate treating apparatus including a first liquid treatment chamber that performs a liquid treatment to a substrate, a second liquid treatment chamber that is disposed below the first liquid treatment chamber and performs a liquid treatment to a substrate, a first feed channel that supplies gases to the first liquid treatment chamber, and a second feed channel that supplies gases to the second liquid treatment chamber. The first feed channel includes a first vertical member that extends substantially vertically. The second feed channel includes a second vertical member that extends substantially vertically. The first vertical member and the second vertical member both extend to a position lower in level than the second liquid treatment chamber.

Abstract: An apparatus for conveying dishware through a cleaning cycle. The apparatus includes a magnetic grasping element to grasp dishware having a ferromagnetic component. The magnetic grasping element transitions between at least two states to selectively engage and disengage the dishware. A corresponding system and method are also described herein.

Abstract: A method includes providing a photoresist solution that includes a first solvent having a first volume and a second solvent having a second volume, where the first solvent is different from the second solvent and where the first volume is less than the second volume; dispersing the photoresist solution over a substrate to form a film, where the dispersing evaporates a portion of the first solvent and a portion of the second solvent such that a remaining portion of the first solvent is greater than a remaining portion of the second solvent; baking the film; after baking the film, exposing the film to form an exposed film; and developing the exposed film.

Abstract: A substrate processing method for processing a surface of a substrate includes: a first solvent supply step (a) of supplying IPA to a surface of a substrate while rotating the substrate to treat the surface; a modification treatment liquid supply step (b) of supplying a silylating solution after the first solvent supply step to form a liquid film; and a step (c) of heating the substrate in the first solvent supply step and the modification treatment liquid supply step. The step (c) is configured such that an amount of heat per unit time to be applied to the substrate in the modification treatment liquid supply step is larger than an amount of heat per unit time applied to the substrate in the first solvent supply step.

Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Abstract: Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(?O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(?O)OX groups are —C(?O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

Abstract: A method for inspecting a process solution is provided. In this method, a process solution is disposed on a surface of a substrate. A liquid of the process solution is removed to form an inspection sample by a spinning method. The surface of the substrate of the inspection sample is inspected by the surface inspection device to identify whether a residue of the process solution is left on the surface of the substrate after removing the liquid of the process solution. Further, an apparatus for inspecting a process solution and a sample preparation apparatus in inspection are also provided herein.

Abstract: A developer container is capable of supplying a liquid developer to a portion, of a surface of a cleaning roller, between a cleaning position X and a contact position Y with respect to a rotational direction of the cleaning roller. A free end of a cleaning blade is positioned in a range of 65° or more and less than 95° as a positive angle of the rotational direction of the cleaning roller when a line passing through a center of the cleaning roller and an upper end portion of the cleaning roller with respect to a direction of gravitation is at 0° (reference line G). In this case, the cleaning blade is disposed so that an angle ? between a line F perpendicular to a line E connecting the center of the cleaning roller and the free end of the cleaning blade, and the cleaning blade is in a range of 35° or more and less than 60° .

Abstract: A display substrate including a base substrate and an optical functional layer provided on the base substrate. The optical functional layer includes a black matrix providing a plurality of first shading strips and a plurality of second shading strips. The plurality of first shading strips intersect with the plurality of second shading strips so as to divide the display substrate into a plurality of pixel units. A thickness of the first shading strips is different from that of the second shading strips.

Abstract: Disclosed is a substrate treating method including a solvent supplying step of supplying a solvent to a center part of a substrate while increasing a rotation speed of the substrate. In the solvent supplying step, the solvent is successively supplied to the substrate until the solvent reaches a periphery edge of the substrate. With such a substrate treating method, the solvent is able to cover a substrate surface entirely with effective suppression of particles. In other words, a process of supplying the solvent to the substrate is performable with effectively improved quality.

Abstract: The present invention relates to new multiferroic materials. More particularly, the present invention relates to new multiferroic single phase ceramic materials as well as to thin films formed from these materials, methods of preparing these materials and their use as multiferroic materials in electronic components and devices.

Abstract: In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

Abstract: Embodiments describe a method of depositing an MOF, including depositing a metal solution onto a substrate, spinning the substrate sufficient to spread the metal solution, depositing an organic ligand solution onto the substrate and spinning the substrate sufficient to spread the organic ligand solution and form a MOF layer.

Abstract: An apparatus for treating a substrate includes a chamber including a space in which a substrate is treated, a support member disposed in the chamber and supporting the substrate, and a heating member for heating the substrate. The space is divided into an upper space and a lower space by the support member. The support member includes a support plate receiving the substrate, a base supporting the support plate, exposing a bottom surface of the support plate and including a cut region formed in an edge portion of the base, and an adjustment block held in the cut region and coupled to the base. The cut region fluidly connects the upper space to the lower space. The adjustment block divides the cut region into a plurality of vents.

Abstract: A photoresist baking apparatus is provided. The photoresist baking apparatus comprises a baking chamber including an inlet, an outlet and a cover sealed connected thereon. The cover is applied to guide the hot air entering the baking chamber and includes a heating device for maintaining the temperature of the hot air. The heating device is disposed on the cover for heating the hot air flowing to the cover and maintaining the temperature of the hot air to be consistent when the hot air flowing to the outlet, thereby to prevent from the photoresist volatile condensing and dripping due to decreased temperature after the photoresist volatile contacting the cover and affecting the product quality, and to guarantee the temperature homogeneity inside the baking chamber.

Abstract: In a coating apparatus, a nozzle moving mechanism selectively grips any one of a plurality of coating solution nozzles, moves the gripped coating solution nozzle and a solvent nozzle together, and moves at least the solvent nozzle to a solvent suction unit. The moved solvent nozzle is caused to dispense a solvent to the solvent suction unit, and the gripped coating solution nozzle is caused to suck the solvent retained in the same solvent suction unit to which the solvent has been dispensed. Thus, since dispensation and suction of the solvent are done in the same solvent suction unit, the quantity of the solvent used can be held down. Further, a supply line for supplying the solvent does not need to be provided for the suction unit. The construction of the suction unit can therefore be made simple, and its cost can be held down.

Abstract: This disclosure relates to dielectric film forming composition containing at least one fully imidized polyimide polymer; at least one inorganic filler; at least one metal-containing (meth)acrylate compound; and at least one catalyst. The dielectric film formed by such a composition can have a relatively low coefficient of thermal expansion (CTE) and a relatively high optical transparency.

Abstract: Tooling apparatus and methods are provided to fabricate semiconductor devices in which controlled thermal annealing techniques are utilized to modulate microstructures of metallic interconnect structures. For example, an apparatus includes a single platform semiconductor processing chamber having first and second sub-chambers. The first sub-chamber is configured to receive a semiconductor substrate comprising a metallization layer formed on a dielectric layer, wherein a portion of the metallization layer is disposed within an opening etched in the dielectric layer, and to form a stress control layer on the metallization layer. The second sub-chamber comprises a programmable hot plate which is configured to perform a thermal anneal process to modulate a microstructure of the metallization layer while the stress control layer is disposed on the metallization layer, and without an air break between the process modules of forming the stress control layer and performing the thermal anneal process.

Abstract: A treatment solution supply apparatus for supplying a treatment solution to a treatment solution discharge unit that discharges the treatment solution to a treatment body, includes: a temporary storage apparatus that temporarily stores the treatment solution supplied from a treatment solution supply source that stores the treatment solution; a filter that removes a foreign substance in the treatment solution from the temporary storage apparatus; and a pump that sends the treatment solution from which the foreign substance has been removed by the filter to the treatment solution discharge unit, wherein the temporary storage apparatus has a pressure-feeding function of pressure-feeding the treatment solution stored in the temporary storage apparatus.

Abstract: A nanoimprint lithography method includes contacting a composite polymerizable coating formed from a pretreatment composition and an imprint resist with a nanoimprint lithography template defining recesses. The composite polymerizable coating is polymerized to yield a composite polymeric layer defining a pre-etch plurality of protrusions corresponding to the recesses of the nanoimprint lithography template. The nanoimprint lithography template is separated from the composite polymeric layer. At least one of the pre-etch plurality of protrusions corresponds to a boundary between two of the discrete portions of the imprint resist, and the pre-etch plurality of protrusions have a variation in pre-etch height of ±10% of a pre-etch average height. The pre-etch plurality of protrusions is etched to yield a post-etch plurality of protrusions having a variation in post-etch height of ±10% of a post-etch average height, and the pre-etch average height exceeds the post-etch average height.

Abstract: A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.