Abstract: A sputtering device includes a reaction chamber, a pin mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The pin mechanism is arranged in the reaction chamber. The pin mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the pin mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: In a method of forming a diamond film, substrate, or window, a substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the substrate. The grown diamond film, substrate, or window has a thickness between 150-999 microns and an aspect ratio?100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The substrate can optionally be removed or separated from the grown diamond film, substrate, or window.

Abstract: A system includes at least one component configured to generate thermal energy, a heat spreader configured to remove thermal energy from the at least one component, and at least one substrate configured to remove thermal energy from the heat spreader. The heat spreader includes a first portion and a second portion. The first portion of the heat spreader is coupled to the substrate, and the second portion of the heat spreader is coupled to the at least one component. The first portion of the heat spreader includes high aspect-ratio structures that are separated from one another. The high aspect-ratio structures cause the first portion of the heat spreader to be pliable and able to accommodate a mismatch in coefficients of thermal expansion between a material in the heat spreader and a material in the substrate.

Abstract: A cutting tool made of diamond-coated cemented carbide includes: a tool body made of tungsten carbide-based cemented carbide including: 3 to 15 mass % of Co; at least one of TaC and NbC of which a total amount is 0.1 to 3.0 mass %; and a balance including WC; and a diamond film coating the tool body, the tool body has a plurality of protrusions on a surface of the tool body, an upper portion of each of the protrusions is made of the at least one of TaC and NbC, and a lower portion of each of the protrusions is made of WC and Co, the lower portion being under the upper portion.

Abstract: Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

Abstract: A catalyst support for an electrochemical system includes a high surface area refractory material core structure and boron-doped diamond. The BDD modifies the high surface area refractory material core structure.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable.

Abstract: A method and apparatus for the continuous production of carbon nanostructures so as to improve their quality and quantity. Such structures have potential application as hydrogen storage means in new energy sources. The carbon nanostructures (20) are grown in a continuous or semi-continuous manner on a continuous, elongate, heated substrate (15) to form a coated substrate the process involving movement of the substrate through one or more deposition chambers (2,3). The substrate may be an electrically heated wire (15).

Abstract: A method of depositing a stable diamond film on a metal substrate includes pretreating a surface of the substrate and depositing a diamond film on the substrate by way of a multi-stage chemical vapor deposition, in which each subsequent stage is performed at progressively higher temperature. The deposited diamond may be doped with boron. The substrate may be titanium, a titanium alloy, iron, an iron alloy, or any other valve metal. The diamond deposition may be a high temperature chemical vapor deposition. The first deposition stage may optionally create a carbide of diamond and substrate, and an optional mixture of diamond and amorphous carbon may be deposited to bond this carbide layer to a subsequently applied layer. The resulting product may be used as an electrode, as a tooth or blade in a cutting tool, or may have many other uses.

Abstract: A hot wire chemical vapor deposition apparatus comprises a vacuum chamber, a substrate support member located in the vacuum chamber, a filament assembly support member located in the vacuum chamber, a precursor gas inlet located in the vacuum chamber and a device for providing a clean portion of at least one filament inside the vacuum chamber without breaking vacuum.

Abstract: In a process according to the invention and an apparatus according to the invention for the coating or modification of a surface a flow of a first gaseous phase or of a first aerosol comprising one or more precursor compounds is guided along a heated filament so that the precursor compounds are converted into reactive compounds. Alternatively, non-activated particles are guided along a heated filament so that these are activated and are then combined with a gaseous phase or an aerosol comprising a plurality of precursor compounds, so that the precursor compounds are thereby converted into reactive compounds. The reactive compounds formed according to at least one of the two aforementioned steps are guided onto a substrate that is exposed to atmospheric pressure, so that a layer is deposited on the substrate or its surface is modified.

Abstract: The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant material and discrete elements of the addressable field-emission electrode are made of a high-temperature resistant metal. The growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer, namely the backing temperature, the temperature of the reactor threads, the pumping speed of a gas mixture through the reactor, a selected distance between the reactor threads and the backing and a settling time. The cathode metallic discrete elements can be made of two metallic layers.

Abstract: A method of manufacturing diamond coatings, at low temperature and low pressure on a substrate utilizing chemical vapor transport (CVT) comprising the steps of: providing a wire-wrapped graphite assembly component and the substrate into a chamber; filling the chamber with hydrogen; reducing ambient pressure in the chamber to a vacuum and backfilling with hydrogen; sealing the chamber containing hydrogen at a pressure less than 1 atmosphere; and passing electric current through the graphite rod until the substrate is heated within a range of 125° C.–750° C. to produce high-quality diamond at temperatures with exceptional properties.

Abstract: The present invention is related to an apparatus for forming diamond via a chemical vapor deposition process using hot metal filament based on hydrogen and methane gas, and a method thereof. In particular, the present invention provides an apparatus for using the hot filament repeatedly without breakage, in comparison with the conventional apparatus that the filament is limited in one use, and a method thereof. The apparatus that the filament is limited in one use, and a method thereof. The apparatus includes a base substrate wherein diamond is synthesized by heating filament due to supply of voltage, a pair of electrodes being located above the base substrate, and a plurality of hot filaments being placed over the both electrodes. The top portion of the electrodes has a flat surface that is parallel with the filament, and the side portion has a curved surface. A plurality of filaments is smoothly hanged to both electrodes according to the flat surface and the curved surface without fixing.

Abstract: A diamond foam article comprises diamond deposited material on a substrate having an open contiguous structure at least partially filled with a filler material. Methods for forming a diamond foam article comprise providing a foam substrate; preparing the foam substrate for diamond deposition; depositing diamond material on the foam substrate by one of several diamond deposition methods; and at least partially filling the diamond foam article with a filler material. Diamond foam articles are bonded to other components.

Abstract: Methods of forming a nano-supported catalyst on a substrate and at least one carbon nanotube on the substrate are comprised of configuring a substrate with an electrode (102), immersing the substrate with the electrode into a solvent containing a first metal salt and a second metal salt (104) and applying a bias voltage to the electrode such that a nano-supported catalyst is at least partly formed with the first metal salt and the second metal salt on the substrate at the electrode (106). In addition, the method of forming at least one carbon nanotube is comprised of conducting a chemical reaction process such as catalytic decomposition, pyrolysis, chemical vapor deposition, or hot filament chemical vapor deposition o grow at least one nanotube on the surface of the nano-supported catalyst (108).

Abstract: A carbon deposition chamber is provided with several advantages. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves.

Abstract: A method of forming diamond crystals and diamond films from a dissociated precursor solution of methanol and at least one carbon containing compound having a carbon to oxygen ration of greater than one is disclosed. The A hot filament is applied to dissociate the vaporized precursor of the premixed solution and generate oxidizing and etching radicals such as OH. O, H as well as carbon depositing radicals such as CH3. Graphitic and amorphous carbon deposition is suppressed or preferentially etched resulting in the net deposition of good quality diamond crystals and diamond films.

Abstract: A hard carbon thin film formed on a substrate has a graded structure in which a ratio of sp2 to sp3 carbon-carbon bonding in the thin film decreases in its thickness direction from a thin film/substrate interface toward a surface of the thin film. A method of forming the thin film involves varying the film-forming ion species over time to produce the composition gradient or structural gradient in the thickness direction of the thin film.

Abstract: A process for making CVD diamond burrs, mills and files of odontological and relates uses, for boring, abrading and machining teeth, glass, ceramics, metals, etc. A CVD diamond deposition method and gas mixture deposits a CVD diamond as a thin or thick film directly on the tool stick material, or as a freestanding film on a substrate material for later joining to a tool stick.

Abstract: A composite structure having a substantially monocrystalline growth substrate and at least one monocrystalline or polycrystalline layer of diamond or diamond-like material arranged on a surface of the growth substrate, the surface of the growth substrate being provided with crystal growth nuclei having crystal axes which exhibit an inclination of not more than 10%, preferably not more than 7%, with respect to corresponding axes of the crystal lattice of the growth substrate, and a process for producing such a composite structure in which the growth substrate is pretreated and growth nuclei are deposited from a nucleating gas phase of known composition for depositing layers of diamond or diamond-like material, in which during the nucleation the growth substrate is raised to a negative electrical potential relative to the nucleating gas phase.

Abstract: An improved non-sticking diamond-like nanocomposition includes networks of a-C:H and a-Si:O, wherein the H-concentration is between 85% and 125% of the C-concentration. The composition includes preferably 25 to 35 at % of C, 30 to 40 at % of H, 25 to 30 at % of Si, and 10 to 15 at % of O.

Abstract: A carbon deposition chamber is provided with several advantages. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner.

Abstract: In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.

Abstract: A method and apparatus for nucleation and growth of diamond by hot-filament DC plasma deposition. The apparatus uses a resistively heated filament array for dissociating hydrogen in the reactant gas. For two sided diamond growth, configurations of substrate-hot filament-grid-hot filament-substrate or substrate-hot filament-hot filament-substrate configuration are used. For the latter configuration, two independent arrays of filaments serve as both hot filament and grid, and AC or DC plasma is maintained between the filament arrays. For this and the other electrode configurations, the grid electrode is positively biased with respect to the hot filaments to maintain a plasma. The plasma potential gradient across the grid and the hot-filament draws ions from the plasma towards the filaments. To further increase deposition rates, the filament array is biased negatively with respect to the substrate holder so that a DC plasma is also maintained between the substrate and filament array.