Abstract: Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas. Thin films of hafnium oxide are also described.

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: The present invention is directed to a method and an apparatus for providing vapor for a discontinuous process.

Abstract: A coating system for coating an interior surface of a housing comprising: first and second closures engaging first and second ends, respectively, of the housing to provide an enclosed volume; first and second flow lines coupled to the first and second closures, respectively, the first flow line and/or the second flow line connected to an inert gas source; a reactant gas source(s) comprising a reactant gas and coupled to the first and/or second flow line; and a controller in electronic communication with the reactant gas and inert gas sources, and configured to control flow of inert gas into the enclosed volume, and counter current injection of reactant gas from the reactant gas source(s) into the enclosed volume whereby introduction of pulse(s) of the reactant gas into the enclosed volume are separated by introduction of inert gas into the enclosed volume, and coating layer(s) are deposited on the interior surface.

Abstract: Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.

Abstract: A coating system for coating, with a surface coating process, an interior surface of a housing defining an interior volume, having: a first closure and a second closure to sealingly engage with the housing; one or more first flow lines and second flow lines fluidically coupled to the first and second closure, respectively; a pressurized cell comprising a pressurized gas comprising at least one reactant and at a pressure of greater than a pressure within the housing, wherein the pressurized cell is fluidically coupled to a pressurized cell line comprising one of the first flow lines or second flow lines; and a controller in electronic communication with the pressurized cell and configured to control injection of a pulse of the pressurized gas into a flow of inert gas in the pressurized cell line, whereby the pulse is introduced into the interior volume, coating the interior surface with a coating layer.

Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

Abstract: A composition is provided which contains an organic zinc compound represented by general formula R1—Zn—R1, in which R1 represents a linear or branched alkyl group having 1 to 7 carbon atoms, and an organic metal compound containing a metal element whose oxide has a band gap smaller than 3.2 eV. The composition can be used to form a zinc oxide film by a droplet coating method, such as a spray coating method, at a base material temperature of less than 200° C. A method for producing a zinc oxide film involves coating the composition in the form of droplets at a base material temperature of less than 200° C. to form the zinc oxide film. Using this method, it is possible to provide a zinc oxide thin film having an ultraviolet ray absorption ability, excellent visible light permeability, and a thickness of 1 ?m or less.

Abstract: Methods of enhancing the corrosion resistance of an oxidizable material exposed to a supercritical fluid is disclosed One method includes placing a surface layer on an oxidizable material, and choosing a buffered supercritical fluid containing a reducing agent with the composition of the buffered supercritical fluid containing the reducing agent chosen to avoid the corrosion of the surface layer or reduce the rate of corrosion of the surface layer and avoid the corrosion of the oxidizable material or reduce the rate of corrosion of the oxidizable material at a temperature above the supercritical temperature and supercritical pressure of the supercritical fluid.

Abstract: An area-selective deposition method may include providing a substrate structure including a silicon oxide area and a silicon nitride area; performing a surface treatment on the silicon oxide area and the silicon nitride area of the substrate structure to form a first functional group on a surface of the silicon oxide area and to form a second functional group on a surface of the silicon nitride area; and performing an atomic layer deposition (ALD) process in a chamber in which the substrate structure is disposed, to selectively form a silicon oxide layer on the silicon oxide area among the silicon nitride area and the silicon oxide area. The ALD process may include: supplying an aminosilane-based silicon precursor into the chamber; purging the chamber with a first purge gas; supplying an oxygen-containing source into the chamber; and purging the chamber with a second purge gas.

Abstract: This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

Abstract: A coated tool includes a base and a coating layer on the base. The coating layer includes a first layer including Al2O3 particles, and a second layer on the first layer. The second layer includes, sequentially from the base, a first film, a second film in contact with the first film, and a third film in contact with the second film. The first to third films individually include Ti. The first film, the second film and the third film individually include at least one kind selected from C and N. The coated tool satisfies a relationship of a first N content>a third N content>a second N content, in which the first N content is an N content in the first film, the second N content is an N content in the second film, and the third N content is an N content in the third film.

Abstract: A gas feeding cup removably provided in a fixed gas manifold structure of an atomic layer deposition apparatus and including a cup bottom including gas feeding channels extending through the cup bottom from a cup bottom outer surface to a cup bottom inner surface on the other side of the cup bottom; and a cup wall surrounding the cup bottom and extending transverse relative to the cup bottom in a direction away from the cup bottom at the inner surface side of the cup bottom such that a gas feeding space is formed by the cup wall and the cup bottom inner surface.

Abstract: A gas outlet surface of a gas inlet element for a CVD reactor or a gas outlet surface of a shielding plate for a gas inlet element has a multiplicity of gas outlet openings arranged around a center of the gas outlet surface. The central points of the gas outlet openings lie at the corner points of polygonal, identically formed cells, each having a geometrical central point. The position and the length of the edges of the cells are defined by intersecting reference lines, the reference lines being assigned to at least two families of lines, and the reference lines of a respective family extending linearly and parallel to one another over an entirety of the gas outlet surface. The center of the gas outlet surface is separated from one of the corner points by one-third±10 percent of the length of one of the edges.

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: Methods are directed to the use of a supercritical fluid for performing a dyeing of a material such that dye from a first material is used to dye a second material. A supercritical fluid is passed through a first material in a pressurized vessel. The supercritical fluid transports the dye from the first material to at least a second material causing a dye profile of the second material to change as a result of dye from the first material perfusing the second material.

Abstract: Described herein is a technique capable of suppressing the generation of particles due to a film peeling in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; (b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and (c) forming the metal-containing film on the substrate after (b).

Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

Abstract: Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

Abstract: A reactor 200 according to the present invention includes a heater storage section serving as a space section capable of accommodating a carbon heater for initial heating of silicon core wires. A carbon heater 13 is loaded in a deposition reaction space 20 in the reactor 200 only when necessary for initial heating of silicon core wires 12. After initial heating of the silicon core wires 12 is finished, the carbon heater 13 is unloaded from the deposition reaction space to the heater storage section 30. As a result, the carbon heater 13 is not unduly damaged in the reactor any longer and its deterioration is reduced. In addition, because of reduction in reaction with hydrogen gas in the reactor, the generation of methane is reduced, and thus carbon contamination of polycrystalline silicon is reduced.

Abstract: The present invention relates to a method of controlling a defect structure in an MFI zeolite membrane and a method of separating xylene isomers using the MFI zeolite membrane produced by the method, and more particularly, to a method of controlling a defect structure in an MFI zeolite membrane that improves the performance of separating a xylene isomer by reducing the amount and size of defects formed in the MFI membrane structure when removing organic-structure-directing agents in the membrane through calcination at a low temperature using ozone.

Abstract: The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I R1-(A1-Z1)r—(B1)n—(Z2-A2)s-Sp-G??(I) in which the groups occurring have the meanings defined in Claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

Abstract: The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.

Abstract: Disclosed are apparatuses and methods for providing a substrate onto a substrate support in a processing chamber, generating an inert plasma in the processing chamber, and maintaining the inert plasma to heat the substrate to a steady state temperature, suitable for conducting plasma-enhanced chemical vapor deposition (PECVD), in less than 30 seconds from providing the substrate onto the substrate support. An apparatus may include a processing chamber, a process station that includes a substrate support, a process gas unit configured to flow an inert gas onto a substrate supported by the substrate support, a plasma source configured to generate an inert plasma in the process station, and a controller with instructions configured to flow the inert gas onto the substrate, generate the inert plasma in the first process station, and maintain the inert plasma to thereby heat the substrate.

Abstract: The present invention relates to a method for the protection of a hafnium-free, nickel-based monocrystalline superalloy part against corrosion and oxidation. The method comprises at least the following steps of: manufacturing a hafnium-free, nickel-based monocrystalline superalloy part (1), depositing on the part a first hafnium-free sublayer (2), depositing, on the first sublayer (2), a second hafnium-doped sublayer (3), depositing, on the second sublayer (3), a third hafnium-free sublayer (4), sandblasting the third sublayer (4) to at least partially separate the third sublayer (4) and increase the surface roughness of an upper sub-layer formed by the second sublayer (3) and at least partially by the third sublayer (4), performing oxidation treatment so as to obtain at the surface a layer of hafnium-doped oxidised material (5), depositing a thermal barrier layer (6) on the layer of oxidised material (5).

Abstract: Methods of depositing a tungsten nucleation layers that achieve very good step coverage are provided. The methods involve a sequence of alternating pulses of a tungsten-containing precursor and a boron-containing reducing agent, while co-flowing hydrogen (H2) with the boron-containing reducing agent. The H2 flow is stopped prior to the tungsten-containing precursor flow. By co-flowing H2 with the boron-containing reducing agent but not with the tungsten-containing precursor flow, a parasitic CVD component is reduced, resulting in a more self-limiting process. This in turn improves step coverage and conformality of the nucleation layer. Related apparatuses are also provided.

Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power t

Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.

Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 ??-cm at a film thickness of less than 50 nanometers.

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Abstract: One or more heating assemblies for a material deposition apparatus for pre-heating a substrate before entering a material deposition area and/or for post-heating the substrate after exiting the material deposition area are described.

Abstract: Polymeric membranes are modified via SIS to promote membrane resilience, prolong membrane lifetime, and mitigate fouling. Modified membranes include an inorganic material within an outer portion of the modified membrane and a polymeric core that remains unmodified by the inorganic material. The polymer may be removed leaving an inorganic material patterned from an initial unmodified polymeric membrane.

Abstract: A device and a method for characterizing the surface shape of a test object. The device for characterizing the surface shape of a test object has a test arrangement (130, 230) for determining the surface shape of a test object (111, 112, 113, 211, 212, 213) using a test wave. The test wave has a wavefront generated by diffraction at a diffractive optical element. The device additionally has a first vacuum chamber (110, 210) and a second vacuum chamber (120, 220), wherein the second vacuum chamber (120, 220) has a magazine for mounting at least two diffractive optical elements (121, 122, 123, 221, 222, 223).

Abstract: The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.

Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

Abstract: A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

Abstract: The present invention provides a supply system enabling a precursor of a solid material or a precursor of a liquid material to be supplied to a latter process at no higher concentration than required and also at or above a predetermined concentration. A supply system 1 comprises: a vessel 11 for receiving a precursor material; a vessel heating unit for heating the vessel at a set temperature; a carrier gas heating unit which is disposed in an introduction line L1 and heats a carrier gas; a main measurement unit which is disposed in an outward conduction line L2 and obtains data relating to a gas of the precursor; and a carrier gas temperature control unit for controlling the temperature of the carrier gas heating unit in accordance with a measurement result of the main measurement unit.

Abstract: An atomic layer deposition (ALD) method can include pulsing a first reactant vapor into a reactor assembly. The first reactant vapor is supplied to a first reactant gas line. An inactive gas is supplied to a first inactive gas line at a first flow rate. The first reactant vapor and the inactive gas are fed to the reactor assembly by way of a first feed line. The reactor assembly is purged by supplying the inactive gas to the first inactive gas line at a second flow rate higher than the first flow rate. A first portion of the inactive gas can be fed back along a diffusion barrier portion of the first reactant gas line to provide an inert gas valve (IGV) upstream of the first inactive gas line. A second portion of the inactive gas can be fed to the reactor assembly by way of the first feed line.

Abstract: A superalloy workpiece includes a superalloy substrate and an interface layer (IF-1) of essentially the same superalloy composition directly on a surface of the superalloy substrate. A transition layer (TL) of essentially the same superalloy and superalloy oxides or a different metal composition and different metal oxides is on the interface layer (IF-1). The oxygen content of the transition layer increases from the interface layer (IF-1) towards a barrier layer (IF-2) of super alloy oxides or of different metal oxides.

Abstract: Disclosed herein is an article comprising a substrate; an abrasive coating disposed on the substrate; where the abrasive coating comprises a matrix having abrasive grit particles dispersed therein; and a layer of material disposed on the abrasive coating; where the layer of material is a titanium nitride (TiN), boron nitride (BN), titanium-aluminum-nitrides [(TiAl)N], titanium-aluminum-silicon-nitrides [(TiAlSi)N], chromium nitrides (CrN), aluminum oxide (Al2O3), titanium oxide (TiO2), silicon carbo-nitride (SiCN), titanium carbo-nitride (TiCN), or a combination thereof.

Abstract: A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.

Abstract: A method of applying a protective coating to a substrate includes the steps of: providing a turbine engine component substrate formed of a ceramic matrix composite material, forming an environmental barrier coating layer including a rare earth disilicate material directly on the substrate, treating an outer surface of the environmental barrier coating layer to form a thermal barrier coating layer including a porous rare earth monociliate material directly on the environmental barrier coating layer. The step of treating the outer surface is performed using a thermal process consisting of the application of heat or a chemical-thermal process consisting of the application of heat and a chemical. The method further includes infiltrating at least a portion of the pores with a metal solution or suspension.

Abstract: Thick, inorganic coatings can be deposited on a polarizer by chemical vapor deposition. In one embodiment, the method can comprise activating a surface of the polarizer with an oxygen plasma in an oven; injecting a solution including tetrakis(dimethylamino)silane dissolved in cyclohexane and water into the oven; and vapor depositing silicon dioxide onto the polarizer. These three steps can be repeated multiple times until desired thickness is attained.

Abstract: Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densifies a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

Abstract: The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.

Abstract: Examples of a substrate processing apparatus includes a device for subjecting a substrate to processing, and a controller for modifying a control parameter predetermined to control the device with a first modification value and a second modification value that vary over time, thereby calculating a modified parameter, and controlling the device based on the modified parameter, wherein the first modification value has a shorter term for modifying the control parameter than the second modification value.

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.