Abstract: Methods for depositing films by atomic layer deposition using aminosilanes are provided.

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

Abstract: In order to provide a concentration control apparatus that, without adding any new sensors or the like, makes it possible to accurately estimate a quantity of source consumed inside a vaporization tank, and to perform highly accurate concentration control in accordance with the remaining quantity of source, there is provided a concentration control apparatus that, in a vaporizer that is equipped with at least a vaporization tank containing a liquid or solid source, a carrier gas supply path that supplies a carrier gas to the vaporization tank, and a source gas extraction path along which flows a source gas which is created by vaporizing the source and is then extracted from the vaporization tank, controls a concentration of the source gas and includes a concentration monitor that is provided on the source gas extraction path, and outputs output signals in accordance with a concentration of the source gas.

Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.

Abstract: Disclosed are chuck assemblies, semiconductor device fabricating apparatuses, and methods of fabricating semiconductor devices. The chuck assembly comprises a chuck base including lower and upper bases, a ceramic plate on the upper base, an edge ring that surrounds the ceramic plate, a ground ring that surrounds an outer sidewall of the edge ring on an edge portion of the lower base, a coupling ring between the ground ring and the upper base and between the edge ring and the edge portion of the lower base, an upper heat sink between the coupling ring and the edge ring, and a sidewall heat sink between the coupling ring and the ground ring and between the coupling ring and the upper base.

Abstract: A method of coating a flexible substrate in a roll-to-roll deposition system is described. The method includes unwinding the flexible substrate from an unwinding roll, the flexible substrate having a first coating on a first main side thereof; measuring a lateral positioning of the first coating while guiding the flexible substrate to a coating drum; adjusting a lateral position of the flexible substrate on the coating drum depending on the measured lateral positioning of the first coating; and depositing a second coating on the flexible substrate, particularly on a second main side of the flexible substrate opposite the first main side. Further described is a vacuum deposition apparatus for conducting the methods described herein.

Abstract: A process for densifying annular porous substrates by chemical vapour infiltration, includes providing a plurality of unit modules including a support plate on which is formed a stack of substrates, the support plate including a central gas inlet opening communicating with an internal volume formed by the central passages of the stacked substrates and gas outlet openings distributed angularly around the central opening, and a thermal mass cylinder disposed around the stack of substrates having a first end integral with the support plate and a second free end, forming stacks of unit modules in the chamber of a densification furnace, and injecting into the stacks of unit modules a gas phase including a gas precursor of a matrix material to be deposited within the porosity of the substrates.

Abstract: An atomic layer deposition apparatus includes a film-forming container 11 in which a film-forming process is performed, a vertically movable stage 14 configured to hold a substrate 100, a susceptor 50 held on the stage 14 and being configured to hold the substrate 100, and a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the susceptor 50, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed. Further, the susceptor 50 includes an upper susceptor substrate holding portion 52B configured to hold the substrate 100, and an upper susceptor peripheral portion 52A arranged in a periphery of the upper susceptor substrate holding portion 52B, wherein a susceptor deposition prevention member 15 is provided on the upper susceptor peripheral portion 52A.

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

Abstract: There is included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.

Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.

Abstract: A method to operate an apparatus for feeding liquid metal to an evaporator device in a vacuum chamber, wherein the feed tube runs from a container adapted to contain a liquid metal to the evaporator device and wherein an electromagnetic pump is provided in the feed tube and a valve in the feed tube between the electromagnetic pump and the evaporator device. An at least partially gas permeable electromagnetic pump, which is enclosed in a pressure controlled enclosure, is used in the method wherein electromagnetic pump and the pressure controlled enclosure are controlled such that filling and draining of the evaporator device and feed tube can be done without affecting the vacuum pressure in the vacuum chamber.

Abstract: The present disclosure proposes a coating nozzle, a coating device and a corresponding coating method. The nozzle includes: a first reactant spout configured to spray a first reactant; a second reactant spout configured to spray a second reactant; and a first air curtain spout configured to spray shielding gas, so that the sprayed shielding gas forms an air curtain which isolates the first reactant from the second reactant. The device includes: one or more coating nozzles described above; and a transport mechanism configured to transport an object to be coated, so that the object to be coated sequentially passes through a first reaction region of the first reactant and a second reaction region of the second reactant for each of the one or more nozzles.

Abstract: A method for preparing a cable formed of carbon nanotubes, comprising decomposing at least one carbon precursor compound and at least one precursor compound of a catalyst on a porous substrate (43), in which method continuously: —a first gas stream comprising a precursor of a catalyst is brought into contact with a porous substrate (43); —a second gas stream comprising at least one carbon precursor is brought into contact with said porous substrate (43); —said porous substrate (43) is heated to a temperature leading to the deposition of catalyst particles and the catalytic growth of a carbon nanotube bundle, and preferably between 500° C. and 1000° C.

Abstract: The present application discloses an evaporation crucible including a crucible body and a plurality of nozzles connected to the crucible body. Each of the plurality of nozzles has an opening on a side distal to the crucible body. The plurality of nozzles include a first nozzle on a first edge of the plurality of nozzles. The first nozzle has a first height relative to a surface of the crucible body on a side proximal to the first edge greater than a second height relative to the surface of the crucible body on a side distal to the first edge.

Abstract: The invention relates to a method of fabricating a conductive fabric by vapor phase polymerization, a multi-pressure sensor for a fiber type, and a multi-pressure measuring method employing the multi-pressure sensor. The method of fabricating a conductive fabric by vapor phase polymerization provides a conductive fabric having a resistance value which changes depending on pressure applied by a user. The multi-pressure measuring method employing the multi-pressure sensor has high resistance to moisture and repeated loading, is manufactured with lower costs than existing pressure sensors, is capable of measuring both dynamic and static pressures using a principle of a piezo-resistive sensor, has a simple circuit configuration, and is strong against a high-frequency disturbance.

Abstract: There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

Abstract: A high-temperature, high-strength, oxidation-resistant cobalt-nickel base alloy is disclosed. The alloy includes, in weight percent: about 3.5 to about 4.9% of Al, about 12.2 to about 16.0% of W, about 24.5 to about 32.0% Ni, about 6.5% to about 10.0% Cr, about 5.9% to about 11.0% Ta, and the balance Co and incidental impurities. A method of making an article having high-temperature strength, cyclic oxidation resistance and corrosion resistance is disclosed. The method includes forming a high-temperature, high-strength, oxidation-resistant cobalt-nickel base alloy as described herein; forming an article from the alloy; solution-treating the alloy by a solution heat treatment; and aging the alloy by providing at least one aging heat treatment at an aging temperature that is less than the gamma-prime solvus temperature, wherein the alloy is configured to form a continuous, protective, adherent oxide layer on an alloy surface upon exposure to a high-temperature oxidizing environment.

Abstract: An evaporation mask, an organic light-emitting diode (OLED) panel and system, and an evaporation monitoring method. The evaporation mask includes a first functional region and a first peripheral region disposed outside of the first functional region. The first functional region has a first opening for forming a functional layer by evaporation, and the first peripheral region has a second opening for monitoring an evaporation effect of the first opening. A monitoring structure can be formed on an observation layer of the OLED panel by evaporation through the second opening of the evaporation mask, and the evaporation effect of the first opening of the evaporation mask can be monitored via the monitoring structure, so that the evaporation effect can be monitored in time to achieve real-time on-line monitoring.

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

Abstract: A treatment apparatus includes two can rolls provided on a transfer path through which a long resin film is transferred in a roll-to-roll manner in a vacuum chamber; and surface treatment means facing an outer circumference of each of the can rolls to treat a surface of the long resin film cooled by being wound around the outer circumference. The downstream can roll is provided with upper and lower two sets of feeding and sending systems, and one surface of the long resin film in contact with the outer circumference of the downstream can roll at a time when the long resin film travels through the lower one of the two sets of feeding and sending systems is opposite to the other surface of the resin film in contact with the outer circumference of the downstream can roll at a time when the resin film travels through the upper one.

Abstract: The present disclosure provides a vehicle cruise control sensor-cover and a method of manufacturing the vehicle cruise control sensor-cover, the vehicle cruise control sensor-cover including a bottom cover member wherein indium or an indium-containing alloy is deposited, by using a non-conductive vacuum metallization (NCVM) method, on a front surface of a bottom cover body having a logo and an outer frame protruding three-dimensionally and a top cover body including a transparent material and having a back surface formed in a shape corresponding to the front surface of the bottom cover member, wherein the top cover member is assembled integrally with the front surface of the bottom cover member, and a laser etching process is partially selectively performed only on the logo or the outer edge on the back surface of the top cover body to partially form an etched surface.

Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

Abstract: A method of forming a composite article may generally comprise forming a mixture of (i) a reactant gas stream comprising hydrogen and methyltrichlorosilane and (ii) solid silicon carbide particles; heating a carbon substrate in the reactor; heating the mixture of the reactant gas stream and solid silicon carbide particles to decompose the methyltrichlorosilane to produce silicon carbide material without causing the solid silicon carbide particles to react and injecting the heated mixture into the reactor; co-depositing the silicon carbide material and the solid silicon carbide particles onto the heated carbon substrate in the reactor to produce a CVD matrix comprising the silicon carbide material and the solid silicon carbide particles by chemical vapor deposition on the heated carbon substrate; post-treating the carbon substrate having the CVD matrix coating in a furnace; and cooling and removing the carbon substrate from the CVD matrix to form the transparent composite article.

Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

Abstract: A coated article includes a substrate and an MCrAlY coating supported on the substrate. The M includes at least one of nickel, cobalt, and iron, Cr is chromium, Al is aluminum, and Y is yttrium. The composition of the MCrAlY coating varies in an amount of at least one of Cr, Al, and Y by location on the substrate with respect to localized property requirements. In one example, the coated article is an article of a gas turbine engine.

Abstract: There is provided a thermoelectric material including a compound which is formed of an element R belonging to alkaline earth metal and lanthanoid, and an element X belonging to any of Group 13 elements, Group 14 elements, and Group 15 elements. The composition ratio of the element R and the element X is selected to obtain the compound having an AlB2 type structure.

Abstract: Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densities a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

Abstract: The method for coating a separator for a fuel cell according to one form of the present disclosure includes the steps of: vaporizing a metal nitride precursor to obtain a precursor gas; introducing a metal nitride coating layer-forming gas containing the precursor gas and a reactive gas to a reaction chamber; applying a voltage to the reaction chamber so that the precursor gas and reactive gas may be converted into a plasma state, thereby forming a metal nitride coating layer on a substrate; introducing a carbon layer-forming gas containing a carbonaceous gas to the reaction chamber; and applying a voltage to the reaction chamber so that the carbonaceous gas may be converted into a plasma state, thereby forming a carbon coating layer on the metal nitride coating layer.

Abstract: A method for producing a carbon nanostructure according to an aspect of the present invention is a method in which a carbon nanostructure is produced between a base body and a separable body while the separable body is relatively moved away from the base body, the base body including a carburizable metal that is a principal constituent, the separable body including a carburizable metal that is a principal constituent, the separable body being joined to or in contact with the base body in a linear or strip-like shape. The method includes a carburizing gas feed step, an oxidizing gas feed step, a heating step in which the portion of the base body at which the base body and the separable body are joined to or in contact with each other is heated, and a separation step in which the separable body is relatively moved away from the base body.

Abstract: Methods, systems, and devices to enhance fracturing fluid delivery to subsurface formations to enhance hydrocarbon production from the subsurface formations may include providing a manifold coupling having a manifold coupling passage with a manifold coupling axis. The manifold coupling may include a first inlet passage positioned to provide fluid flow between a first fracturing fluid output and the manifold coupling passage, and a second inlet passage positioned opposite the first inlet passage to provide fluid flow between a second fracturing fluid output and the manifold coupling passage. The first inlet passage may have a first inlet passage cross-section at least partially defining a first inlet axis extending transverse relative to the manifold coupling axis. The second inlet passage may have a second inlet passage cross-section at least partially defining a second inlet axis extending transverse relative to the manifold coupling axis and not being co-linear with the first inlet axis.

Abstract: Methods, systems, and devices to enhance fracturing fluid delivery to subsurface formations to enhance hydrocarbon production from the subsurface formations may include providing a manifold coupling having a manifold coupling passage with a manifold coupling axis. The manifold coupling may include a first inlet passage positioned to provide fluid flow between a first fracturing fluid output and the manifold coupling passage, and a second inlet passage positioned opposite the first inlet passage to provide fluid flow between a second fracturing fluid output and the manifold coupling passage. The first inlet passage may have a first inlet passage cross-section at least partially defining a first inlet axis extending transverse relative to the manifold coupling axis. The second inlet passage may have a second inlet passage cross-section at least partially defining a second inlet axis extending transverse relative to the manifold coupling axis and not being co-linear with the first inlet axis.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

Abstract: Containment assemblies and methods for forming containment assemblies of gas turbine engines are provided. For example, a containment assembly comprises a containment case including a plurality of coated fibers. Each coated fiber comprises a fiber surrounded by a ceramic material such that the ceramic material coats the fiber. As another example, a containment assembly comprises an inner case and a containment case comprising a plurality of coated fibers. Each coated fiber comprises a fiber surrounded by a ceramic material such that the ceramic material coats the fiber. The containment case includes a greater proportion of the coated fibers at an inner surface of a layer of the containment case than at a location within the containment case that is radially outward from the inner surface. Methods for forming a containment assembly of a gas turbine engine are provided.

Abstract: A system for treatment of a first material with at least one hazardous material, the system comprising a manufacturing room configured according to safety standards to hold at least one hazardous material. The manufacturing room is configured for the treatment of the first material using the at least one hazardous material as a solvent. A holding room is not configured according to the safety standards and is separated from the manufacturing room by a wall common to the manufacturing room and the holding room. A vacuum oven is embedded in the wall, and has a rear portion in the manufacturing room and a front portion in the holding room. The front door of the oven is configured to be opened from the holding room for removing the first material from the inner cavity following removal of the at least one hazardous material from the first material and from the inner cavity and no electrical components of the vacuum oven extend into the manufacturing room.

Abstract: The present disclosure relates to a novel non-conjugated radical polymer film with high electrical conductivity, and methods of making and using the novel non-conjugated radical polymer film.

Abstract: There is provided a substrate processing apparatus including: a chamber in which a target substrate is accommodated; a first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device; and an energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight.

Abstract: Method for producing a thermal barrier system on a metal substrate (1) of a turbo engine part, such as a high-pressure turbine blade, the thermal barrier system comprising at least one columnar ceramic layer (31, . . . , 3i, . . . , 3n), characterised in that the method comprises a step of compressing at least one of said at least one columnar ceramic layer (31, . . . 3i, . . . , 3n).

Abstract: An air-floating thin film bonding apparatus and its air-floating roller is provided. The apparatus is composed of an air-floating rollers, which can blow out airflow at a specific angle to be applied to the base film with three-dimensional obstacles. The positive pressure provided by the airflow can be utilized to fill the gap space caused by the three-dimensional obstacles. Therefore, the base film can bond to the bonding film tightly to overcome the wrinkles and defects caused by the three-dimensional obstacle and the problem of unflatness of the film-bonding can be solved.

Abstract: A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

Abstract: A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.

Abstract: A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below, (R1)3-Si-R2-Si-(R1)3??Chemical Formula 1, (R3)3-Si-R4-Si-(R3)3??Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.

Abstract: Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.

Abstract: High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.

Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

Abstract: A thin-film deposition apparatus, related systems and methods are provided. The thin-film deposition apparatus 200 comprises a reaction chamber 201 for accommodating substrates 10 arranged with their side faces adjacent to each other and a fluid distribution device 100 with an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.

Abstract: There is provision of a showerhead assembly including a plate provided with multiple gas holes. Each of the gas holes has a first opening, a second opening, and a gas passage disposed between the first opening and the second opening. The gas passage has a first portion communicating with the first opening and a second portion communicating with the second opening. The second portion has a funnel-like shape or a bell-like shape, and an edge of the second opening is rounded.

Abstract: Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.