Coating By Vapor, Gas, Or Smoke Patents (Class 427/248.1)
  • Patent number: 11646198
    Abstract: Methods for depositing films by atomic layer deposition using aminosilanes are provided.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: May 9, 2023
    Assignee: Lam Research Corporation
    Inventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
  • Patent number: 11646184
    Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: May 9, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: HyungChul Moon, WonKi Jeong
  • Patent number: 11631596
    Abstract: In order to provide a concentration control apparatus that, without adding any new sensors or the like, makes it possible to accurately estimate a quantity of source consumed inside a vaporization tank, and to perform highly accurate concentration control in accordance with the remaining quantity of source, there is provided a concentration control apparatus that, in a vaporizer that is equipped with at least a vaporization tank containing a liquid or solid source, a carrier gas supply path that supplies a carrier gas to the vaporization tank, and a source gas extraction path along which flows a source gas which is created by vaporizing the source and is then extracted from the vaporization tank, controls a concentration of the source gas and includes a concentration monitor that is provided on the source gas extraction path, and outputs output signals in accordance with a concentration of the source gas.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: April 18, 2023
    Assignee: HORIBA STEC, CO., LTD.
    Inventors: Toru Shimizu, Masakazu Minami
  • Patent number: 11624107
    Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: April 11, 2023
    Assignee: Samsung Display Co., Ltd.
    Inventors: Choong-Ho Lee, Jung-Min Lee
  • Patent number: 11618762
    Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: April 4, 2023
    Assignee: ADEKA CORPORATION
    Inventors: Tomoharu Yoshino, Nana Okada, Akihiro Nishida, Atsushi Yamashita
  • Patent number: 11605551
    Abstract: Disclosed are chuck assemblies, semiconductor device fabricating apparatuses, and methods of fabricating semiconductor devices. The chuck assembly comprises a chuck base including lower and upper bases, a ceramic plate on the upper base, an edge ring that surrounds the ceramic plate, a ground ring that surrounds an outer sidewall of the edge ring on an edge portion of the lower base, a coupling ring between the ground ring and the upper base and between the edge ring and the edge portion of the lower base, an upper heat sink between the coupling ring and the edge ring, and a sidewall heat sink between the coupling ring and the ground ring and between the coupling ring and the upper base.
    Type: Grant
    Filed: August 22, 2021
    Date of Patent: March 14, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Youngjae Son, Guesuk Lee, Taemin Earmme, Hyeongyun Lee, Seungchul Han
  • Patent number: 11552283
    Abstract: A method of coating a flexible substrate in a roll-to-roll deposition system is described. The method includes unwinding the flexible substrate from an unwinding roll, the flexible substrate having a first coating on a first main side thereof; measuring a lateral positioning of the first coating while guiding the flexible substrate to a coating drum; adjusting a lateral position of the flexible substrate on the coating drum depending on the measured lateral positioning of the first coating; and depositing a second coating on the flexible substrate, particularly on a second main side of the flexible substrate opposite the first main side. Further described is a vacuum deposition apparatus for conducting the methods described herein.
    Type: Grant
    Filed: August 4, 2020
    Date of Patent: January 10, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Andreas Sauer, Thomas Deppisch, Mathew Dean Allison
  • Patent number: 11549176
    Abstract: A process for densifying annular porous substrates by chemical vapour infiltration, includes providing a plurality of unit modules including a support plate on which is formed a stack of substrates, the support plate including a central gas inlet opening communicating with an internal volume formed by the central passages of the stacked substrates and gas outlet openings distributed angularly around the central opening, and a thermal mass cylinder disposed around the stack of substrates having a first end integral with the support plate and a second free end, forming stacks of unit modules in the chamber of a densification furnace, and injecting into the stacks of unit modules a gas phase including a gas precursor of a matrix material to be deposited within the porosity of the substrates.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: January 10, 2023
    Assignee: SAFRAN CERAMICS
    Inventors: Franck Lamouroux, Rémy Dupont, William Ros
  • Patent number: 11453944
    Abstract: An atomic layer deposition apparatus includes a film-forming container 11 in which a film-forming process is performed, a vertically movable stage 14 configured to hold a substrate 100, a susceptor 50 held on the stage 14 and being configured to hold the substrate 100, and a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the susceptor 50, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed. Further, the susceptor 50 includes an upper susceptor substrate holding portion 52B configured to hold the substrate 100, and an upper susceptor peripheral portion 52A arranged in a periphery of the upper susceptor substrate holding portion 52B, wherein a susceptor deposition prevention member 15 is provided on the upper susceptor peripheral portion 52A.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: September 27, 2022
    Assignee: THE JAPAN STEEL WORKS, LTD.
    Inventors: Keisuke Washio, Tatsuya Matsumoto
  • Patent number: 11450537
    Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: September 20, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Hironari Sasagawa, Maju Tomura, Yoshihide Kihara
  • Patent number: 11424127
    Abstract: There is included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
    Type: Grant
    Filed: September 15, 2021
    Date of Patent: August 23, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Atsuro Seino
  • Patent number: 11424132
    Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: August 23, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Takashi Kuratomi, Avgerinos Gelatos, Tae Hong Ha, Xuesong Lu, Szuheng Ho, Wei Lei, Mark Lee, Raymond Hung, Xianmin Tang
  • Patent number: 11414744
    Abstract: A method to operate an apparatus for feeding liquid metal to an evaporator device in a vacuum chamber, wherein the feed tube runs from a container adapted to contain a liquid metal to the evaporator device and wherein an electromagnetic pump is provided in the feed tube and a valve in the feed tube between the electromagnetic pump and the evaporator device. An at least partially gas permeable electromagnetic pump, which is enclosed in a pressure controlled enclosure, is used in the method wherein electromagnetic pump and the pressure controlled enclosure are controlled such that filling and draining of the evaporator device and feed tube can be done without affecting the vacuum pressure in the vacuum chamber.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: August 16, 2022
    Assignee: TATA STEEL NEDERLAND TECHNOLOGY B.V.
    Inventors: Edzo Zoestbergen, Colin Commandeur, Roland Jan Snijders, Eduard Paul Mattheus Bakker, Peter William Hazelett, Douglas Alexander Hamilton, Stephen James Widdis, Timothy Dean Kaiser
  • Patent number: 11401606
    Abstract: The present disclosure proposes a coating nozzle, a coating device and a corresponding coating method. The nozzle includes: a first reactant spout configured to spray a first reactant; a second reactant spout configured to spray a second reactant; and a first air curtain spout configured to spray shielding gas, so that the sprayed shielding gas forms an air curtain which isolates the first reactant from the second reactant. The device includes: one or more coating nozzles described above; and a transport mechanism configured to transport an object to be coated, so that the object to be coated sequentially passes through a first reaction region of the first reactant and a second reaction region of the second reactant for each of the one or more nozzles.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: August 2, 2022
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Song Zhang, Tao Sun
  • Patent number: 11401628
    Abstract: A method for preparing a cable formed of carbon nanotubes, comprising decomposing at least one carbon precursor compound and at least one precursor compound of a catalyst on a porous substrate (43), in which method continuously: —a first gas stream comprising a precursor of a catalyst is brought into contact with a porous substrate (43); —a second gas stream comprising at least one carbon precursor is brought into contact with said porous substrate (43); —said porous substrate (43) is heated to a temperature leading to the deposition of catalyst particles and the catalytic growth of a carbon nanotube bundle, and preferably between 500° C. and 1000° C.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: August 2, 2022
    Assignee: Nawa Technologies
    Inventors: Pascal Boulanger, Thomas Goislard de Monsabert
  • Patent number: 11396694
    Abstract: The present application discloses an evaporation crucible including a crucible body and a plurality of nozzles connected to the crucible body. Each of the plurality of nozzles has an opening on a side distal to the crucible body. The plurality of nozzles include a first nozzle on a first edge of the plurality of nozzles. The first nozzle has a first height relative to a surface of the crucible body on a side proximal to the first edge greater than a second height relative to the surface of the crucible body on a side distal to the first edge.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: July 26, 2022
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., Chengdu BOE Optoelectronics Technology Co., Ltd.
    Inventors: Jianpeng Wu, Yinan Liang, Fengli Ji, Chang Luo, Zhongying Yang
  • Patent number: 11378471
    Abstract: The invention relates to a method of fabricating a conductive fabric by vapor phase polymerization, a multi-pressure sensor for a fiber type, and a multi-pressure measuring method employing the multi-pressure sensor. The method of fabricating a conductive fabric by vapor phase polymerization provides a conductive fabric having a resistance value which changes depending on pressure applied by a user. The multi-pressure measuring method employing the multi-pressure sensor has high resistance to moisture and repeated loading, is manufactured with lower costs than existing pressure sensors, is capable of measuring both dynamic and static pressures using a principle of a piezo-resistive sensor, has a simple circuit configuration, and is strong against a high-frequency disturbance.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: July 5, 2022
    Assignee: Korea Institute of Industrial Technology
    Inventors: Seong Jin Jang, Jae Hoon Ko, Jee Young Lim, Seung Ju Lim
  • Patent number: 11380540
    Abstract: There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: July 5, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takashi Nakagawa, Yoshiro Hirose, Naofumi Ohashi, Tadashi Takasaki
  • Patent number: 11371120
    Abstract: A high-temperature, high-strength, oxidation-resistant cobalt-nickel base alloy is disclosed. The alloy includes, in weight percent: about 3.5 to about 4.9% of Al, about 12.2 to about 16.0% of W, about 24.5 to about 32.0% Ni, about 6.5% to about 10.0% Cr, about 5.9% to about 11.0% Ta, and the balance Co and incidental impurities. A method of making an article having high-temperature strength, cyclic oxidation resistance and corrosion resistance is disclosed. The method includes forming a high-temperature, high-strength, oxidation-resistant cobalt-nickel base alloy as described herein; forming an article from the alloy; solution-treating the alloy by a solution heat treatment; and aging the alloy by providing at least one aging heat treatment at an aging temperature that is less than the gamma-prime solvus temperature, wherein the alloy is configured to form a continuous, protective, adherent oxide layer on an alloy surface upon exposure to a high-temperature oxidizing environment.
    Type: Grant
    Filed: March 10, 2019
    Date of Patent: June 28, 2022
    Assignee: General Electric Company
    Inventors: Akane Suzuki, Andrew John Elliott, Michael Francis Xavier Gigliotti, Jr., Kathleen Blanche Morey, Pazhayannur Subramanian
  • Patent number: 11374173
    Abstract: An evaporation mask, an organic light-emitting diode (OLED) panel and system, and an evaporation monitoring method. The evaporation mask includes a first functional region and a first peripheral region disposed outside of the first functional region. The first functional region has a first opening for forming a functional layer by evaporation, and the first peripheral region has a second opening for monitoring an evaporation effect of the first opening. A monitoring structure can be formed on an observation layer of the OLED panel by evaporation through the second opening of the evaporation mask, and the evaporation effect of the first opening of the evaporation mask can be monitored via the monitoring structure, so that the evaporation effect can be monitored in time to achieve real-time on-line monitoring.
    Type: Grant
    Filed: April 28, 2018
    Date of Patent: June 28, 2022
    Assignee: KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD.
    Inventors: Mingxing Liu, Junfeng Li, Xuliang Wang, Feng Gao
  • Patent number: 11362162
    Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: June 14, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myung Soo Huh, Dong Kyun Ko, Sung Chui Kim, Woo Jin Kim, Cheol Lae Roh, Keun Hee Park
  • Patent number: 11352697
    Abstract: A treatment apparatus includes two can rolls provided on a transfer path through which a long resin film is transferred in a roll-to-roll manner in a vacuum chamber; and surface treatment means facing an outer circumference of each of the can rolls to treat a surface of the long resin film cooled by being wound around the outer circumference. The downstream can roll is provided with upper and lower two sets of feeding and sending systems, and one surface of the long resin film in contact with the outer circumference of the downstream can roll at a time when the long resin film travels through the lower one of the two sets of feeding and sending systems is opposite to the other surface of the resin film in contact with the outer circumference of the downstream can roll at a time when the resin film travels through the upper one.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: June 7, 2022
    Assignee: SUMITOMO METAL MINING CO., LTD.
    Inventor: Hideharu Okami
  • Patent number: 11345292
    Abstract: The present disclosure provides a vehicle cruise control sensor-cover and a method of manufacturing the vehicle cruise control sensor-cover, the vehicle cruise control sensor-cover including a bottom cover member wherein indium or an indium-containing alloy is deposited, by using a non-conductive vacuum metallization (NCVM) method, on a front surface of a bottom cover body having a logo and an outer frame protruding three-dimensionally and a top cover body including a transparent material and having a back surface formed in a shape corresponding to the front surface of the bottom cover member, wherein the top cover member is assembled integrally with the front surface of the bottom cover member, and a laser etching process is partially selectively performed only on the logo or the outer edge on the back surface of the top cover body to partially form an etched surface.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: May 31, 2022
    Inventors: Keun Ha Kim, Tae Yong Hong, Hong Il Lee
  • Patent number: 11335591
    Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: May 17, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Anqing Cui, Dien-Yeh Wu, Wei V. Tang, Yixiong Yang, Bo Wang
  • Patent number: 11319629
    Abstract: A method of forming a composite article may generally comprise forming a mixture of (i) a reactant gas stream comprising hydrogen and methyltrichlorosilane and (ii) solid silicon carbide particles; heating a carbon substrate in the reactor; heating the mixture of the reactant gas stream and solid silicon carbide particles to decompose the methyltrichlorosilane to produce silicon carbide material without causing the solid silicon carbide particles to react and injecting the heated mixture into the reactor; co-depositing the silicon carbide material and the solid silicon carbide particles onto the heated carbon substrate in the reactor to produce a CVD matrix comprising the silicon carbide material and the solid silicon carbide particles by chemical vapor deposition on the heated carbon substrate; post-treating the carbon substrate having the CVD matrix coating in a furnace; and cooling and removing the carbon substrate from the CVD matrix to form the transparent composite article.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: May 3, 2022
    Inventors: William F Fischer, III, Walter Wrigglesworth, III, Lauren Montgomery
  • Patent number: 11286560
    Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: March 29, 2022
    Assignee: Lam Research Corporation
    Inventors: Richard Phillips, Chloe Baldasseroni, Nishanth Manjunath
  • Patent number: 11261742
    Abstract: A coated article includes a substrate and an MCrAlY coating supported on the substrate. The M includes at least one of nickel, cobalt, and iron, Cr is chromium, Al is aluminum, and Y is yttrium. The composition of the MCrAlY coating varies in an amount of at least one of Cr, Al, and Y by location on the substrate with respect to localized property requirements. In one example, the coated article is an article of a gas turbine engine.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: March 1, 2022
    Assignee: RAYTHEON TECHNOLOGIES CORPORATION
    Inventor: Mark T. Ucasz
  • Patent number: 11251353
    Abstract: There is provided a thermoelectric material including a compound which is formed of an element R belonging to alkaline earth metal and lanthanoid, and an element X belonging to any of Group 13 elements, Group 14 elements, and Group 15 elements. The composition ratio of the element R and the element X is selected to obtain the compound having an AlB2 type structure.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: February 15, 2022
    Assignee: HITACHI, LTD.
    Inventors: Akinori Nishide, Jyun Hayakawa, Ken Kurosaki, Sora-at Tanusilp
  • Patent number: 11236021
    Abstract: Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densities a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: February 1, 2022
    Assignee: Goodrich Corporation
    Inventors: Ying She, Naveen Menon, Gavin Charles Richards, Zissis A. Dardas, Thomas P. Filburn
  • Patent number: 11233248
    Abstract: The method for coating a separator for a fuel cell according to one form of the present disclosure includes the steps of: vaporizing a metal nitride precursor to obtain a precursor gas; introducing a metal nitride coating layer-forming gas containing the precursor gas and a reactive gas to a reaction chamber; applying a voltage to the reaction chamber so that the precursor gas and reactive gas may be converted into a plasma state, thereby forming a metal nitride coating layer on a substrate; introducing a carbon layer-forming gas containing a carbonaceous gas to the reaction chamber; and applying a voltage to the reaction chamber so that the carbonaceous gas may be converted into a plasma state, thereby forming a carbon coating layer on the metal nitride coating layer.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: January 25, 2022
    Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION
    Inventors: Kwang Hoon Choi, Woong Pyo Hong, Chi Seung Lee, Hyun Dal Park, Bokyung Kim, Jungyeon Park, In Woong Lyo, Jiyoun Seo
  • Patent number: 11220432
    Abstract: A method for producing a carbon nanostructure according to an aspect of the present invention is a method in which a carbon nanostructure is produced between a base body and a separable body while the separable body is relatively moved away from the base body, the base body including a carburizable metal that is a principal constituent, the separable body including a carburizable metal that is a principal constituent, the separable body being joined to or in contact with the base body in a linear or strip-like shape. The method includes a carburizing gas feed step, an oxidizing gas feed step, a heating step in which the portion of the base body at which the base body and the separable body are joined to or in contact with each other is heated, and a separation step in which the separable body is relatively moved away from the base body.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: January 11, 2022
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Takeshi Hikata, Soichiro Okubo, Ryusuke Nakai, Daisuke Tanioka
  • Patent number: 11193360
    Abstract: Methods, systems, and devices to enhance fracturing fluid delivery to subsurface formations to enhance hydrocarbon production from the subsurface formations may include providing a manifold coupling having a manifold coupling passage with a manifold coupling axis. The manifold coupling may include a first inlet passage positioned to provide fluid flow between a first fracturing fluid output and the manifold coupling passage, and a second inlet passage positioned opposite the first inlet passage to provide fluid flow between a second fracturing fluid output and the manifold coupling passage. The first inlet passage may have a first inlet passage cross-section at least partially defining a first inlet axis extending transverse relative to the manifold coupling axis. The second inlet passage may have a second inlet passage cross-section at least partially defining a second inlet axis extending transverse relative to the manifold coupling axis and not being co-linear with the first inlet axis.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: December 7, 2021
    Assignee: BJ Energy Solutions, LLC
    Inventors: Tony Yeung, Nicholas Tew, William Nieuwenburg
  • Patent number: 11193361
    Abstract: Methods, systems, and devices to enhance fracturing fluid delivery to subsurface formations to enhance hydrocarbon production from the subsurface formations may include providing a manifold coupling having a manifold coupling passage with a manifold coupling axis. The manifold coupling may include a first inlet passage positioned to provide fluid flow between a first fracturing fluid output and the manifold coupling passage, and a second inlet passage positioned opposite the first inlet passage to provide fluid flow between a second fracturing fluid output and the manifold coupling passage. The first inlet passage may have a first inlet passage cross-section at least partially defining a first inlet axis extending transverse relative to the manifold coupling axis. The second inlet passage may have a second inlet passage cross-section at least partially defining a second inlet axis extending transverse relative to the manifold coupling axis and not being co-linear with the first inlet axis.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: December 7, 2021
    Assignee: BJ Energy Solutions, LLC
    Inventors: Tony Yeung, Nicholas Tew, William Nieuwenburg
  • Patent number: 11180850
    Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: November 23, 2021
    Assignee: Lam Research Corporation
    Inventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
  • Patent number: 11174550
    Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: November 16, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
  • Patent number: 11149584
    Abstract: Containment assemblies and methods for forming containment assemblies of gas turbine engines are provided. For example, a containment assembly comprises a containment case including a plurality of coated fibers. Each coated fiber comprises a fiber surrounded by a ceramic material such that the ceramic material coats the fiber. As another example, a containment assembly comprises an inner case and a containment case comprising a plurality of coated fibers. Each coated fiber comprises a fiber surrounded by a ceramic material such that the ceramic material coats the fiber. The containment case includes a greater proportion of the coated fibers at an inner surface of a layer of the containment case than at a location within the containment case that is radially outward from the inner surface. Methods for forming a containment assembly of a gas turbine engine are provided.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: October 19, 2021
    Assignee: General Electric Company
    Inventors: David William Crall, Nicholas Joseph Kray, Scott Roger Finn, Wendy Wenling Lin
  • Patent number: 11118837
    Abstract: A system for treatment of a first material with at least one hazardous material, the system comprising a manufacturing room configured according to safety standards to hold at least one hazardous material. The manufacturing room is configured for the treatment of the first material using the at least one hazardous material as a solvent. A holding room is not configured according to the safety standards and is separated from the manufacturing room by a wall common to the manufacturing room and the holding room. A vacuum oven is embedded in the wall, and has a rear portion in the manufacturing room and a front portion in the holding room. The front door of the oven is configured to be opened from the holding room for removing the first material from the inner cavity following removal of the at least one hazardous material from the first material and from the inner cavity and no electrical components of the vacuum oven extend into the manufacturing room.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: September 14, 2021
    Inventor: Alexander Edward Joseph Barsky
  • Patent number: 11084912
    Abstract: The present disclosure relates to a novel non-conjugated radical polymer film with high electrical conductivity, and methods of making and using the novel non-conjugated radical polymer film.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: August 10, 2021
    Assignee: Purdue Research Foundation
    Inventors: Bryan W Boudouris, Brett M. Savoie, Varad Agarkar, Yongho Joo, Seunghyun Sung
  • Patent number: 11081321
    Abstract: There is provided a substrate processing apparatus including: a chamber in which a target substrate is accommodated; a first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device; and an energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: August 3, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Syuji Nozawa, Yoji Iizuka, Tatsuya Yamaguchi
  • Patent number: 11060178
    Abstract: Method for producing a thermal barrier system on a metal substrate (1) of a turbo engine part, such as a high-pressure turbine blade, the thermal barrier system comprising at least one columnar ceramic layer (31, . . . , 3i, . . . , 3n), characterised in that the method comprises a step of compressing at least one of said at least one columnar ceramic layer (31, . . . 3i, . . . , 3n).
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: July 13, 2021
    Assignee: SAFRAN
    Inventors: Nihad Ben Salah, Jawad Badreddine, Aurélian Joulia
  • Patent number: 11046055
    Abstract: An air-floating thin film bonding apparatus and its air-floating roller is provided. The apparatus is composed of an air-floating rollers, which can blow out airflow at a specific angle to be applied to the base film with three-dimensional obstacles. The positive pressure provided by the airflow can be utilized to fill the gap space caused by the three-dimensional obstacles. Therefore, the base film can bond to the bonding film tightly to overcome the wrinkles and defects caused by the three-dimensional obstacle and the problem of unflatness of the film-bonding can be solved.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: June 29, 2021
    Assignees: PROLOGIUM TECHNOLOGY CO., LTD., Prologium Holding Inc.
    Inventors: Szu-Nan Yang, Ching-Ho Wang
  • Patent number: 11041238
    Abstract: A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: June 22, 2021
    Assignee: Luxembourg Institute of Science and Technology (LIST)
    Inventors: Didier Arl, Noureddine Adjeroud, Damien Lenoble
  • Patent number: 11011488
    Abstract: A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: May 18, 2021
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Nazila Dadvand, Christopher Daniel Manack, Salvatore Frank Pavone
  • Patent number: 10995268
    Abstract: A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below, (R1)3-Si-R2-Si-(R1)3??Chemical Formula 1, (R3)3-Si-R4-Si-(R3)3??Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: May 4, 2021
    Assignee: LTCAM CO., LTD.
    Inventors: Sok Ho Lee, Jung Hwan Song, Seong Sik Jeon, Sung Il Jo, Byeoung Tak Kim, Ah Hyeon Lim, Junwoo Lee
  • Patent number: 10998172
    Abstract: Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: May 4, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ilya Lavitsky, Keith A. Miller, John Mazzocco
  • Patent number: 10985284
    Abstract: High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: April 20, 2021
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Timothy E. Boles, Douglas Carlson, Anthony Kaleta
  • Patent number: 10985013
    Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: April 20, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Jianheng Li, Robert G. Ridgeway, Xinjian Lei, Raymond N. Vrtis, Bing Han, Madhukar B. Rao
  • Patent number: 10982325
    Abstract: A thin-film deposition apparatus, related systems and methods are provided. The thin-film deposition apparatus 200 comprises a reaction chamber 201 for accommodating substrates 10 arranged with their side faces adjacent to each other and a fluid distribution device 100 with an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: April 20, 2021
    Assignee: PICOSUN OY
    Inventors: Juhana Kostamo, Timo Vähä-Ojala, Tom Blomberg, Marko Pudas
  • Patent number: 10978275
    Abstract: There is provision of a showerhead assembly including a plate provided with multiple gas holes. Each of the gas holes has a first opening, a second opening, and a gas passage disposed between the first opening and the second opening. The gas passage has a first portion communicating with the first opening and a second portion communicating with the second opening. The second portion has a funnel-like shape or a bell-like shape, and an edge of the second opening is rounded.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: April 13, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Takaaki Nezu, Yoshitaka Tamura
  • Patent number: 10968516
    Abstract: Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: April 6, 2021
    Assignee: Molecular Imprints, Inc.
    Inventors: Se-Hyun Ahn, Byung-Jin Choi, Frank Y. Xu