Abstract: Provided is a graphene-based coating suspension comprising multiple graphene sheets, thin film coating of an anti-corrosive pigment or sacrificial metal deposited on graphene sheets, and a binder resin dissolved or dispersed in a liquid medium, wherein the multiple graphene sheets contain single-layer or few-layer graphene sheets selected from a pristine graphene material having essentially zero % of non-carbon elements, or a non-pristine graphene material having 0.001% to 47% by weight of non-carbon elements wherein the non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, doped graphene, chemically functionalized graphene, or a combination thereof. The invention also provides a process for producing this coating suspension. Also provided is an object or structure coated at least in part with such a coating.

Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.

Abstract: A system and method of producing carbon nanotubes from flare gas and other gaseous carbon-containing sources.

Abstract: Non-ASTM low hysteresis carbon blacks chemically treated, and surface coated with a compound comprising at least one amine group and at least one thiol group, and/or di- and/or polysulfidic linkage. When compared with a standard ASTM grade compound, the disclosed surface modified low hysteresis carbon black compound shows improved rolling resistance, wet traction, and DIN abrasion, comparable to silica compounds.

Abstract: A method of producing bifunctional catalyst systems that include a carbon-coated metal catalyst may comprise: coating a metal catalyst particle with a carbon-containing small molecule to produce a coated metal catalyst particle; carbonizing the carbon-containing small molecule on the coated metal catalyst particle to produce a carbon-coated metal catalyst particle; and mixing the carbon-coated metal catalyst particle with an acid catalyst particle to produce an acid/metal bifunctional catalyst system.

Abstract: The present invention relates to entangled-type carbon nanotubes which have a bulk density of 31 kg/m3 to 85 kg/m3 and a ratio of tapped bulk density to bulk density of 1.37 to 2.05, and a method for preparing the entangled-type carbon nanotubes.

Abstract: Embodiments of the present disclosure generally relate to methods and systems for cleaning a surface of a substrate. In an embodiment, a method of processing a substrate is provided. The method includes introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support. The method further includes flowing a first process gas into the processing volume, the first process gas comprising HF, flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof, and exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions. In another embodiment, a system is provided that includes a processing chamber to process a substrate, and a controller to cause a processing method to be performed in the processing chamber.

Abstract: Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

Abstract: A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas; preferably argon, and at least nitrogen gas as the reactive gas, wherein: the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere h

Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

Abstract: A method for obtaining metallic carbon nanotubes is provided. An insulating substrate comprising hollow portions and non-hollow portions is provided. A plurality of electrodes is formed on a surface of the non-hollow portions. A plurality of carbon nanotubes is formed on a surface of the insulating substrate, and the carbon nanotubes stretch across the hollow portions. The insulating substrate, the plurality of electrodes and the carbon nanotubes are placed into a cavity, and the cavity is evacuated. A voltage is applied between any two electrodes, and photos of carbon nanotubes suspended between the two electrodes are taken. In the photo, darker ones are semiconducting carbon nanotubes, and brighter ones are metallic carbon nanotubes. Finally, the semiconducting carbon nanotubes are removed.

Abstract: A vapor deposition system fixture comprises an arm, a rake, a crown gear bearing assembly, a workpiece holder, a thermocouple, and a contact ring assembly. The crown gear bearing assembly is attached to and rotatably engaged with the rake and includes stationary portion and rotating portions. The workpiece holder is configured to rotate with the rotating portion. The thermocouple is configured to rotate with the workpiece holder. The contact ring assembly comprises a housing, a cover, first and second rotating contact rings, and first and second stationary contact rings. The housing is attached to at least one of the arm and the rake. The first and second rotating contact rings are electrically connected to the thermocouple. The first and second stationary contact rings surround the rotating ring. The first and second stationary contact rings are configured to receive an electrical signal from the first and second rotating contact rings.

Abstract: A carbon nanotube (CNT) resonator includes: a first CNT having a first end and a second end both fixed to a substrate; and a second CNT having a first end fixed to the substrate. The second CNT creates a Van der Waals (VdW) bond with the first CNT where the second CNT overlaps the first CNT. A length of the VdW bond along a distance between the first and the second CNTs oscillates based on a DC voltage applied between the first end of the first CNT and the first end of the second CNT. An electrical current passing through the first and the second CNTs using the VdW bond oscillates based on the oscillation of the length of the VdW bond.

Abstract: A sliding member having a hard carbon coating that has a thickness of 3 ?m or more and demonstrates high peeling resistance and high wear resistance is provided. A sliding member 100 according to the present disclosure includes a base member 10 and a hard carbon coating 12 that is formed on the base member 10 and has the hydrogen content of 3 atomic % or less and a thickness of 3 ?m or more. When HM represents a Martens hardness of the hard carbon coating 12 and HIT represents an indentation hardness, the ratio HM/HIT is 0.40 or more.

Abstract: Transport of a vaporizable liquid containing at least one solute through a material containing nanochannels is performed by contacting material with at least one vaporizable liquid component and inducing liquid transport along nanochannel interior wall surfaces, wherein the material contains nanochannels having an average diameter up to about 300 nm, preferably up to about 100 nm, and liquid transport is induced by partial liquid vaporization. A film of solid material is deposited onto an interior nanochannel wall surface by removing the transport liquid.

Abstract: This disclosure relates to a hydrophilic graphitic material. The graphitic material may be a carbon nanotube film having superior chemical, mechanical and electrical properties compared to traditional membrane materials. The hydrophilic graphitic material includes a kosmotropic polymer or kosmotropic molecule coating that increases the hydrophilicity of a graphitic material. Methods for preparing the hydrophilic graphitic material are disclosed along with potential applications and uses.

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Abstract: A method for fabricating a component according to an example of the present disclosure includes the steps of depositing a stoichiometric precursor layer onto a preform, and densifying the preform by depositing a matrix material onto the stoichiometric precursor layer. An alternate method and a component are also disclosed.

Abstract: The present invention relates generally to a plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction for deposition of thin film coatings and modification of surfaces. More particularly, the present invention relates to a plasma source comprising one or more plasma-generating electrodes, wherein a macro-particle reduction coating is deposited on at least a portion of the plasma-generating surfaces of the one or more electrodes to shield the plasma-generating surfaces of the electrodes from erosion by the produced plasma and to resist the formation of particulate matter, thus enhancing the performance and extending the service life of the plasma source.

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

Abstract: A system for measuring a temperature of a rotating workpiece comprises a deposition chamber, a crucible within the deposition chamber, an energy source, a drive system, a temperature sensor, first and second sensor wires, a dynamic electrical connection, and a control system. The crucible is configured to hold a deposition feedstock material. The energy source is configured to evaporate the deposition feedstock material. The drive system is configured to rotate the workpiece such that the evaporated deposition feedstock material can impinge the rotating workpiece. The temperature sensor is configured to sense the temperature of the rotating workpiece. The first and second sensor wires are electrically connected to the temperature sensor. The dynamic electrical connection is configured to electrically communicate the signal indicative of the sensed temperature from the rotatable workpiece holder to the stationary portion.

Abstract: A sliding member includes: a base; a chromium-based hard chromium plated layer formed on the surface of the base; a hard carbon layer that is mainly composed of carbon element and is formed on the hard chromium plated layer. The hydrogen concentration of the hard chromium plated layer is equal to or less than 150 mass ppm. A method for producing the sliding member involves heating the surface of the base on which the chromium-based hard chromium plated layer has been formed at a temperature of 250° C. or more so that the hydrogen concentration of the hard chromium plated layer is equal to or less than 150 mass ppm, and thereafter forming the hard carbon layer mainly composed of carbon element on the hard chromium plated layer.

Abstract: The invention concerns a substrate that is electrical conductive on at least one of the faces of same, provided with a stack of thin layers comprising at least one layer of catalyst material suitable for accelerating the growth of carbon nanotubes, characterized in that the stack comprises the sequence of thin layers deposited in the following order on top of said at least one electrically conductive face of the substrate: a) optionally, a metal made from metal M or a layer of a metal alloy made from metal M or a graphene layer; b) a titanium layer (Ti); c) an aluminum layer (Al); d) a layer of catalyst material(s) for the growth of carbon nanotubes. The invention also concerns a functional substrate (6) comprising a substrate coated with a carbon nanotube (NTC) mat, a production method and the uses of such a functional substrate.

Abstract: A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate.

Abstract: Methods of forming carbon nanotubes and structures and devices including carbon nanotubes are disclosed. Methods of forming the carbon nanotubes include patterning a surface of a substrate with polymeric material, removing portions of the polymeric material to form exposed substrate surface sections, and forming the carbon nanotubes on the exposed substrate sections.

Abstract: Provided are examples of electrochemically active electrode materials, electrodes using such materials, and methods of manufacturing such electrodes. Electrochemically active electrode materials may include a high surface area template containing a metal silicide and a layer of high capacity active material deposited over the template. The template may serve as a mechanical support for the active material and/or an electrical conductor between the active material and, for example, a substrate. Due to the high surface area of the template, even a thin layer of the active material can provide sufficient active material loading and corresponding battery capacity. As such, a thickness of the layer may be maintained below the fracture threshold of the active material used and preserve its structural integrity during battery cycling.

Abstract: A protective film forming method is provided. In the method, an oxide film of either an organic metal compound or an organic metalloid compound is deposited on a flat surface region between adjacent recessed shapes formed in a surface of a substrate. Then, a lateral portion of the oxide film deposited on the flat surface region is removed by etching.

Abstract: A method of forming a substrate assembly includes preparing a substrate in a chamber, combining a solid-state nitrogen source and a boron source on the substrate, forming a metal layer on a surface of the substrate including the combined solid-state nitrogen and boron sources, and forming a first hexagonal boron nitride sheet directly bonded to the surface of the substrate by performing a heat treatment on the substrate including the metal layer and the combined solid-state nitrogen and boron sources.

Abstract: Solutions of carbon nanotubes and methods for purifying the solutions are provided. The methods include mixing, for example, at least one complexing agents, at least one ionic species, and/or at least one buffer oxide etch (BOE) with a liquid medium containing carbon nanotubes and different types of contaminants, such as metal impurities, amorphous carbon, and/or silica particles, and performing a filtration process to the liquid medium so as to remove or reduce the contaminants in the liquid medium. As a result, carbon nanotube solutions of low contaminants are produced. In some embodiments, the solutions of this disclosure include a high concentration of carbon nanotubes and are substantially free from metal, amorphous carbon, and/or silica impurities.

Abstract: A method for producing a laminate that has to undergo frictional loads, including a substrate and a functional layer formed from tungsten-containing, amorphous diamond-like carbon. To be able to produce such functional layers easily, they are applied by means of a tungsten-containing precursor and by using a PACVD process. A laminate including a functional layer produced by means of a precursor and to the use of a metallo-organic compound as a precursor for producing a functional layer.

Abstract: Articles and methods comprising persistent carbenes are provided, as well as related compositions. In some embodiments, a persistent carbene may be associated with a portion of a substrate (e.g., at least a portion of a surface on the substrate). In certain embodiments, the association of persistent carbene with the substrate may be used to affect certain properties of substrate (e.g., surface chemistry, stability). In some cases, a persistent carbene may be functionalized after association with a portion of a substrate. In some embodiments, a persistent carbene and at least one secondary compound may be associated with a portion of a substrate. Articles and methods of the present invention may be useful for applications involving electronics, sensing, microfabrication, nanotechnology, biomimetic, and drug delivery, amongst others.

Abstract: Disclosed herein are methods of manufacturing micro-super capacitors from C-MEMS structures.

Abstract: A carbon nanotube sheet includes a carbon nanotube aggregate in which a plurality of carbon nanotubes are arrayed, a thermoplastic resin portion formed in a center area of the carbon nanotube aggregate, and an uncured thermosetting resin portion formed in an outer periphery area of the carbon nanotube aggregate so as to surround the thermoplastic resin portion.

Abstract: A method of forming graphene flower is provided, which includes introducing a hydrocarbon gas and an assistance gas into transformer-coupled plasma equipment, and providing a medium-frequency electromagnetic wave to the hydrocarbon gas and the assistance gas by the transformer-coupled plasma equipment to dissociate the hydrocarbon gas, and the dissociated hydrocarbon gas is re-combined to form the graphene flower, wherein the hydrocarbon gas is dissociated at a ratio of greater than 95%.

Abstract: A method of providing an apparatus with a protective layer by simultaneously depositing carbon and seed material on the apparatus to form an intermediate layer, wherein the carbon and seed material have a percentage composition that varies as a function of the intermediate layer thickness; and then providing a diamond-like carbon (DLC) layer adjacent to the intermediate layer to produce the protective layer.

Abstract: A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.

Abstract: A high strength ceramic matrix composite and method for same is provided. A fiber preform is provided that is either self-supporting or is constrained by a tool for subsequent processing. The preform is coated with about 0.1 ?m to about 5 ?m of silicon carbide. The silicon carbide is coated with about 0.05 ?m to about 2 ?m boron nitride, carbon, or other interface layer. The interface layer is coated with at least about 0.2 ?m to about 40 ?m of silicon carbide.

Abstract: A part made of ceramic matrix composite material has fiber reinforcement of carbon or ceramic fibers and a majority-ceramic sequenced matrix having first matrix layers made of crack-deflector material alternating with second matrix layers made of ceramic material. An interphase coating is interposed between the fibers and the matrix, and the interphase coating adheres to the fibers and to the matrix, and is formed of at least one sequence constituted by a first elementary layer made of carbon, possibly doped with boron, surmounted by a second elementary layer made of ceramic. The outer elementary interphase layer of the coating is a ceramic layer having an outer surface formed by ceramic grains of size lying essentially in the range 20 nm to 200 nm, with the presence of grains of size greater than 50 nm conferring roughness on the outer surface ensuring mechanical attachment with the adjacent matrix phase.

Abstract: Methods for providing a metal surface structure and treatment process to prevent the corrosion (e.g., high electrochemical potential oxidization and hydrogen embrittlement) of a metallic component used in electrolyzer operational conditions. The oxide surface scale of a metal plate is used to prevent the corrosion, and electrical conductive materials such as e.g., precious metals or carbon are used to provide the surface electrical conductance of the metallic components. The methods advantageously produce, at a low cost, metal components for electrolyzers that need high electrical conductance and corrosion resistance for long term operation.

Abstract: The disclosed method of manufacturing carbon nanotubes includes the steps of growing CNTs on a substrate 12 and cleaning the inside of a growth furnace 13 by supplying a cleaning gas that contains water into the growth furnace 13. In the cleaning step, the cleaning is performed such that 0.7?(2[CO2]+[CO])/[H2]?1.3 is satisfied, where [H2], [CO2], and [CO] denote the concentrations of hydrogen, carbon dioxide, and carbon monoxide, respectively, in a gas within the growth furnace 13.

Abstract: Catalysts of the present invention are not corroded in acidic electrolytes or at high potential and have excellent durability and high oxygen reducing ability. The catalyst includes a metal oxycarbonitride containing two metals M selected from the group consisting of tin, indium, platinum, tantalum, zirconium, titanium, copper, iron, tungsten, chromium, molybdenum, hafnium, vanadium, cobalt, cerium, aluminum and nickel, and containing zirconium and/or titanium. Also disclosed is a process for producing the catalyst.

Abstract: A method for forming an electrically conductive oxide film (1) on a substrate (2), the method comprising the steps of, bringing the substrate (2) into a reaction space, forming a preliminary deposit on a deposition surface of the substrate (2) and treating the deposition surface with a chemical. The step of forming the preliminary deposit on the deposition surface of the substrate (2) comprises forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space. The step of treating the deposition surface with a chemical comprises treating the deposition surface with an organometallic chemical and subsequently purging the reaction space, to form oxide comprising oxygen, first metal and transition metal. The steps of forming the preliminary deposit and treating the deposition surface being alternately repeated such that a film (1) of electrically conductive oxide is formed on the substrate (2).

Abstract: A method and an apparatus for synthesizing graphene. The method includes loading catalyst metals into a chamber in the horizontal direction or the vertical direction; increasing sizes of grains of the catalyst metals by heating the catalyst metals; raising a temperature inside the chamber while providing a vapor carbon source in the catalyst metals; and forming graphene by cooling the catalyst metals.

Abstract: Disclosed are methods for fabricating pyrolysed carbon nanostructures. An example method includes providing a substrate, depositing a polymeric material, subjecting the polymeric material to a plasma etching process to form polymeric nanostructures, and pyrolysing the polymeric nanostructures to form carbon nanostructures. The polymeric material comprises either compounds with different plasma etch rates or compounds that can mask a plasma etching process. The plasma etching process may be an oxygen plasma etching process.

Abstract: A method for manufacturing a large-area carbon nanotube film is provided. A helical-shaped substrate having a smoothly curved surface configured for growing carbon nanotube film thereon is provided. The helical-shaped substrate is fixed in a reactor chamber using a supporter. The helical-shaped substrate gradually increases along an axis of the reactor chamber, and the supporter is substantially perpendicular to the axis of the reactor chamber. A catalyst layer is formed on the smoothly curved surface of the substrate. A carbon nanotube film is grown on the smoothly curved surface of the helical-shaped substrate by a chemical vapor deposition process.

Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

Abstract: Methods for enabling or enhancing growth of carbon nanotubes on unconventional substrates. The method includes selecting an inactive substrate, which has surface properties that are not favorable to carbon nanotube growth. A surface of the inactive substrate is treated so as to increase a porosity of the same. CNTs are then grown on the surface having the increased porosity.

Abstract: A magnetic data storage medium may include a substrate, a magnetic recording layer, a protective carbon overcoat, and a monolayer covalently bound to carbon atoms adjacent a surface of the protective carbon overcoat. According to this aspect of the disclosure, the monolayer comprises at least one of hydrogen, fluorine, nitrogen, oxygen, and a fluoro-organic molecule. In some embodiments, a surface of a read and recording head may also include a monolayer covalently bound to carbon atoms of a protective carbon overcoat.

Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.

Abstract: The present invention relates to a graphene pattern forming method using a delamination technique employing a polymer stamp. The technique is adequate for forming a graphene pattern having a an arbitrary target pattern. According to the present invention, a portion of a graphene layer formed on a substrate is physically and selectively delaminated using the polymer stamp to simply and easily form a desired graphene pattern having a uniform line width on the substrate. Also, a portion of the graphene layer formed on the substrate is physically and selectively delaminated in a roll-to-roll manner using a rotating body stamp or by using a stamp having a large area to simply and easily form a desired graphene pattern having a uniform line width on the a substrate having a large area.