Abstract: A method of forming aggregate abrasive grains for use in the production of abrading or cutting tools comprises providing abrasive core particles; coating these particles with adhesive, the adhesive comprising a binding agent and a solvent for the binding agent; separately dropping the adhesive-coated core particles onto a layer of abrasive peripheral particles and covering the dropped core particles with further peripheral particles, in such a way as to form aggregate particles, each of which comprises a core particle having peripheral particles attached to it; consolidating the aggregate particles by causing the solvent to evaporate, i.e. by letting the adhesive set.

Abstract: Methods of manufacturing polycrystalline diamond are disclosed. More particularly, a mixture including diamond and fullerenes may be provided. Further, the mixture may be exposed to a high pressure, high temperature sintering process. In addition, a volume of polycrystalline diamond bonded to a substrate may be formed by providing a mixture including diamond and fullerenes and exposing the mixture to a high pressure, high temperature sintering process. A drill bit for drilling a subterranean formation is disclosed. Further, polycrystalline diamond compacts are disclosed including polycrystalline diamond bonded to a substrate, wherein the polycrystalline diamond includes less than about 1% by weight or is substantially free of non-fullerenes, non-diamond carbon. Polycrystalline diamond exhibiting an increased diamond volume fraction due to the presence of fullerenes during manufacture relative to polycrystalline diamond formed without fullerenes is disclosed.

Abstract: A method for making a cemented tungsten carbide-based material includes subjecting a cemented tungsten carbide substrate film to chromization so as to form the cemented tungsten carbide substrate with a chromized layer that contains a tungsten carbide and a chromium carbide and forming a diamond film on the chromized layer.

Abstract: A diamond thin film coating method is provided that enables, with no need for an intermediate layer, the formation of a diamond thin film, which has conventionally been considered difficult because cobalt contained in a binding phase of a cemented carbide provides a catalysis for the formation of graphite. Cobalt in a binding phase (11) present in a surface of a cemented carbide substrate member comprised of a hard phase of a carbide (2) and a binding phase (1) containing cobalt, is silicidated into silicide (3), and thereafter the diamond thin film is formed.

Abstract: A cemented tungsten carbide-based material includes: a cemented tungsten carbide substrate having a chromized layer that contains a tungsten carbide and a chromium carbide; and a diamond film formed on said chromized layer. A method for making the cemented tungsten carbide-based material involves subjecting a cemented tungsten carbide substrate to chromization so as to form the cemented tungsten carbide substrate with a chromized layer that contains a tungsten carbide and a chromium carbide; and forming a diamond film on the chromized layer.

Abstract: Methods of manufacturing a superabrasive element and/or compact are disclosed. In one embodiment, a superabrasive volume including a tungsten carbide layer may be formed. Polycrystalline diamond elements and/or compacts are disclosed. Rotary drill bits for drilling a subterranean formation and including at least one superabrasive element and/or compact are also disclosed.

Abstract: The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.

Abstract: A coated cemented carbide excellent in peel strength includes a cemented carbide substrate comprising a hard phase containing tungsten carbide and a binder phase, and a hard film being provided on a surface of the substrate with a single layer or two or more laminated layers, wherein (1) at least part of the surface of the substrate is subjected to machining, and (2)(i) substantially no crack is present in particles of the hard phase existing at an interface of the surface of the substrate subjected to machining and the hard film and/or (2)(ii) peak intensities of crystal surfaces satisfy hs(001)wc/hs(101)wc≧1.1×hi(001)wc/hi(101)wc wherein hs(001)wc and hs(101)wc each represent a peak intensity of (001) crystal face and that of (101) crystal face at the surface of the substrate subjected to machining processing, respectively, and hi(001)wc and hi(101)wc each represent a peak intensity of (001) crystal face and that of (101) crystal face in the substrate, respectively.

Abstract: A process for making a diamond coated cutting tool that comprises the steps of providing a sintered substrate, re-sintering the sintered substrate to form a re-sintered substrate, subjecting the re-sintered substrate to a chemical treatment to remove cobalt on the surface of the re-sintered substrate so as to form a treated substrate, and adherently depositing a diamond coating to the treated substrate.

Abstract: A method of thermally treating a preform element, of the kind having a facing table of polycrystalline diamond bonded to a substrate of cemented tungsten carbide, comprises the steps of: (a) heating the element to a soaking temperature of 550-625° C., and preferably about 600° C., (b) maintaining the element at that temperature for at least one hour, and (c) cooling the element to ambient temperature. The resulting preform element has a substrate with a cobalt binder including a substrate interface zone with at least 30 percent by volume of the cobalt binder a hexagonal close packed crystal structure. This reduces the risk of cracking or delamination of the element in use.

Abstract: A method of synthesizing an even free-standing diamond film without growth cracks is disclosed. The intrinsic tensile stress of a diamond film is compensated by an artificial compressive stress with a step down control of the deposition temperature during deposition. After a diamond film is deposited with a predetermined thickness at a deposition temperature, the deposition temperature is decreased in multiple steps during the deposition. The bending of the diamond wafer is minimized by using a tungsten substrate with higher elastic modulus than molybdenum.