Abstract: A die or piston of a spark plasma sintering apparatus, wherein the die or piston is made from graphite and the outer surfaces of the die or piston are coated with a silicon carbide layer with a thickness of 1 to 10 micrometres, the silicon carbide layer being further optionally coated with one or more other layer(s) made from a carbide other than silicon carbide chosen from hafnium carbide, tantalum carbide and titanium carbide, the other layer(s) each having a thickness of 1 to 10 micrometres. A spark plasma sintering (SPS) apparatus comprising the die and two of the pistons, defining a sintering, densification or assembly chamber capable of receiving a powder to be sintered, a part to be densified, or parts to be assembled. A method of sintering a powder, densifying a part, or assembling two parts by means of a method of spark plasma sintering (SPS) in an oxidising atmosphere, using the spark plasma sintering (SPS) apparatus.

Abstract: A method is disclosed for coating, by means of a chemical vapor deposition (CVD) technique, a part with a coating (PAO) for protecting against oxidation. The method enables the preparation of a refractory coating for protecting against oxidation, having a three-dimensional microstructure, which ensures the protection against oxidation at a high temperature, generally at a temperature above 1200° C., for materials that are sensitive to oxidation, such as composite materials, and in particular carbon/carbon composite materials.

Abstract: The present invention relates generally to methods for producing metallic products comprising a substrate and a metallic, external coating. In preferred embodiments, the metallic products are jewelry articles.

Abstract: The invention relates to a protective coating, having the chemical composition CaSibBdNeOgHlMem, wherein Me is at least one metal of the group consisting of {Al, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Y, Sc, La, Ce, Nd, Pm, Sm, Pr, Mg, Ni, Co, Fe, Mn}, with a+b+d+e+g+l+m=1. According to the invention, the following conditions are satisfied: 0.45?a?0.98, 0.01?b?0.40, 0.01?d?0.30, 0?e?0.35, 0?g?0.20, 0?l?0.35, 0?m?0.20. The invention relates also to a coated member having a protective coating, as well as to a method for producing a protective coating, in particular a multilayer film for a member.

Abstract: A technique allows diamonds, whether synthetic or naturally occurring, and regardless of shape, to resist high temperatures in an oxidizing environment. This is accomplished by coating the diamond with silicon carbide (SiC). The resulting product may be referred to as SiC-stabilized diamond. A further benefit with respect to diamond jewelry is that by applying SiC to the diamond jewel, a unique pattern is made by small variations in the film thickness. These variations appear under UV and X-ray examination, and along with a unique and invariant weight, provide a unique signature to the jewel.

Abstract: A method of manufacturing silicon carbide crystal includes the steps of forming silicon carbide crystal on a main surface of a base composed of carbon and removing the base from silicon carbide crystal by oxidizing carbon. According to the manufacturing method, by gasifying the base integrated with the silicon carbide crystal by oxidizing carbon forming the base, the base is removed from the silicon carbide crystal. Therefore, since it is not necessary to apply physical force to the silicon carbide crystal or the base for separating them from each other, occurrence of a defect involved with removal of the base can be suppressed. Therefore, high-quality silicon carbide crystal having fewer defects can be manufactured.

Abstract: A method of forming a ?-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.

Abstract: A method of producing a silicon carbide-coated carbon material that comprises heating, under a non-oxidizing atmosphere, a carbon substrate and an amorphous inorganic ceramic material obtained by heating a non-melting solid silicone, thereby forming a silicon carbide coating film on the carbon substrate. A silicon carbide-coated carbon material that exhibits excellent heat resistance and has a uniform silicon carbide coating can be obtained.

Abstract: Produced is a silicon carbide-coated carbon base material in which a silicon carbide coating is densely and uniformly formed on the surface of a carbon base material, such as graphite. A production process includes the steps of: preparing a carbon base material the surface of which has basal plane sites of an SP2 carbon structure with no dangling bond and edge plane sites of an SP2 carbon structure with a dangling bond; and reacting the surface of the carbon base material with SiO gas in an atmosphere at a temperature of 1400° C. to 1600° C. and a pressure of 1 to 150 Pa to form silicon carbide, whereby the carbon base material coated with silicon carbide is produced.

Abstract: A method of manufacturing a high surface area per unit weight carbon electrode includes providing a substrate, depositing a carbon-rich material on the substrate to form a film, and after the depositing, activating the carbon-rich material to increase the surface area of the film of carbon-rich material. Due to the activation process being after deposition, this method enables use of low cost carbon-rich material to form a carbon electrode in the capacitor. The electrode may be used in capacitors, ultracapacitors and lithium ion batteries. The substrate may be part of the electrode, or it may be sacrificial—being consumed during the activation process. The carbon-rich material may include any of carbonized material, carbon aerogel and metal oxides, such as manganese and ruthenium oxide. The activation may include exposing the carbon-rich material to carbon dioxide at elevated temperature, in the range of 300 to 900 degrees centigrade.

Abstract: Inserts are used to line openings in parts that form a semiconductor processing reactor. In some embodiments, the reactor parts delimit a reaction chamber. The reactor parts may be formed of graphite. A layer of silicon carbide is deposited on surfaces of the openings in the reactor parts and the inserts are placed in the openings. The inserts are provided with a hole, which can accept another reactor part such as a thermocouple. The insert protects the walls of the opening from abrasion caused by insertion of the other reactor part into the opening.

Abstract: A coated cutting tool includes a substrate and a PVD coating having an outermost zone C being a nitride, carbide, boride, or mixtures thereof, of Si and at least two additional elements selected from Al, Y, and groups 4, 5 or 6 of the periodic table and zone C is free from a compositional gradient of an average content of Si. Zone C has a laminar, aperiodic, multilayered structure with alternating individual layers X and Y having different compositions from each other. The coating further includes a zone A closest to the substrate, a transitional zone B, where zone A is essentially free from Si, zone B includes a compositional gradient of the average content of Si, and where the average content of Si is increasing towards zone C.

Abstract: A carrier for an object, preferably a substrate of a semiconductor component such as a wafer, includes a receiving element for the object and gas outlets arranged below the receiving element along the object received. At least sections of the carrier are made of a material which including stabilizing fibers and having a porosity which forms the gas outlets, in order to enable a desired gas to exit from the gas outlets in a dosed and finely distributed manner.

Abstract: A method of making a showerhead for a semiconductor processing apparatus is disclosed. In one embodiment, the method includes providing a substrate; forming first holes in the substrate; forming a protective film on the substrate, where the protective film covers sidewalls of the first holes; and forming second holes in the substrate, where a part of the protective film within the first holes is removed. In another embodiment, the method includes providing a substrate; forming islands on the substrate; forming a protective film on the substrate, where the protective film does not cover the tops of the islands; and forming holes in the islands.

Abstract: A method of forming an SiC or SiC/Si3N4 coating layer on a bare graphite substrate via a solid-vapor process is disclosed. Synthesis of the SiC coating layer on the graphite substrate is accomplished by reaction of SiO vapor and carbon (C) of the graphite, and that of the SiC/Si3N4 coating layer is accomplished by reaction of SiO vapor, N2 and C of the graphite. Thickness of the SiC coating layer is affected by porosity of the graphite substrate, reaction temperature, and dwell time. By controlling the reaction temperature, hardness of the SiC coating may be increased to 10-15 times that of the bare graphite substrate. The SiC/Si3N4 coating is much thinner than the SiC coating and has a higher surface hardness. Thermal oxidation tests show that the SiC or SiC/Si3N4 coated substrate exhibits improved oxidation resistance over bare substrates. In particular, the SiC/Si3N4 coated substrate shows outstanding resistance to thermal oxidation.

Abstract: A method for forming interphase layers in ceramic matrix composites. The method forms interphase layers in ceramic matrix composites thereby enabling higher matrix densities to be achieved without sacrificing crack deflection and/or toughness. The methods of the present invention involve the use fugitive material-coated fibers. These fibers are then infiltrated with a ceramic matrix slurry. Then, the fugitive material is removed and the resulting material is reinfiltrated with an interphase layer material. The ceramic matrix composite is then fired. Additional steps may be included to densify the ceramic matrix or to increase the strength of the interphase layer. The method is useful for the formation of three dimensional fiber-reinforced ceramic matrix composites envisioned for use in gas turbine components.

Abstract: A method for manufacturing carbon nanotubes with a desired length includes the steps of: providing an array of carbon nanotubes; placing a mask having at least an opening defined therein on the array of carbon nanotubes, with at least one portion of the array of carbon nanotubes being at least partially exposed through a corresponding opening of the mask; forming a protective film on at least one exposed portion of the array of carbon nanotubes; removing the mask from the array of the carbon nanotubes, with the carbon nanotubes being compartmentalized into at least a first portion covered by the protective film and at least one uncovered second portion; breaking/separating the first portion from the second portion of the array of the carbon nanotubes using a chemical method, thereby obtaining at least a carbon nanotube segment with a protective film covered thereon; and removing the protective film from the carbon nanotube segment.

Abstract: Embodiments of a method of preparing a coated C/C composite structure comprises the steps of: providing a C/C composite structure; applying a silicon based composition over the C/C composite structure by physical vapor deposition; forming a first layer comprising silicon carbide over the C/C composite by annealing the silicon based composition and the C/C composite at an annealing temperature; and applying a second layer comprising boron over the first layer by physical vapor deposition.

Abstract: A method for making a ceramic matrix composite turbine engine component, wherein the method includes providing a plurality of biased ceramic plies, wherein each biased ply comprises ceramic fiber tows, the tows being woven in a first warp direction and a second weft direction, the second weft direction lying at a preselected angular orientation with respect to the first warp direction, wherein a greater number of tows are woven in the first warp direction than in the second weft direction. The plurality of biased plies are laid up in a preselected arrangement to form the component, and a preselected number of the plurality of biased plies are oriented such that the orientation of the first warp direction of the plies lie about in the direction of maximum tensile stress during normal engine operation. A coating is applied to the plurality of biased plies. The coated component preform is then densified.

Abstract: A protective coating for a carbon-containing component comprises a material selected from the group consisting of non-stoichiometric silicon and carbon; non-stoichiometric silicon and oxygen; non-stoichiometric silicon and nitrogen; compounds of silicon, oxygen, and carbon; compounds of silicon, oxygen and nitrogen; compounds of silicon, nitrogen, and carbon; and silicon.

Abstract: An organic silicon polymer is infiltrated and charged into gaps in a matrix phase of a formed fiber fabric, and its airtightness is increased by (a) CVI infiltration process 2 for forming the SIC matrix phase on the surface of the fiber fabric formed, (b) pressurized infiltrations process 4 for pressurizing the organic silicon polymer in the direction operating pressure is applied to the fiber fabric during use and infiltrating the organic silicon polymer into gaps in the aforementioned matrix phase, and (c) heating process 5 for heating the infiltrated fiber fabric at a high temperature. Thus, airtightness can be increased quickly, and fired work can be applied practically even to thrust chambers etc.

Abstract: A method of regulating a high temperature gas phase process on the basis of a measurement curve determined by means of infrared spectroscopy, the curve having at least one spectral peak which is characteristic for the regulation of the process and which deviates from a background of the measurement curve. A straight line synthetic background is calculated directly from the measurement curve on the basis of initial and end values of the characteristic spectral peak, and the peak is integrated over the straight line, or a maximum height of the peak over the straight line, or another characteristic value of the peak relative to the straight line is utilized. The process is regulated based on measured peak and the synthetic background.

Abstract: A high temperature substrate having improved properties. The substrate is a polymer substrate having a glass transition temperature greater than about 120° C., and at least one first barrier stack adjacent to the polymer substrate. The barrier stack includes at least one first barrier layer and at least one first polymer layer. A method for making the high temperature substrate with improved properties is also disclosed.

Abstract: A corrosion-resistant member includes a substrate made of a ceramic material and having a diameter of at least 200 mm, and a film of chemically vapor deposited silicon carbide having a thickness of not less than 0.5 mm and covering at least such a portion of the surface of the substrate that is to contact a corrosive material. A process is disclosed for producing such a corrosion-resistant member, which process includes thermally treating the film at a temperature higher, by not less than 50° C. centigrade, than a film-forming temperature at which the film of silicon carbide is formed, after the formation of the silicon carbide film.

Abstract: The invention concerns (1) thermochemically treating by pack-cementation a carbon-containing material, which may have an open porosity, to generate a refractory carbide coating on its surface and, if the material is porous, within the material; and (2) the use of specific alloys as a pack for thermochemically treating carbon-containing materials, optionally with an open porosity, in a halogenated atmosphere. Pack-cementation is carried out under reduced pressure using an element E (to be transported and to be reacted with the carbon in the material to generate the expected carbide) alloyed to an element M, and using a halide (chloride or fluoride, preferably a fluoride) of the same element M, of low volatility, present in the solid form.

Abstract: Silicon carbide fibers having an excellent mechanical strength and a superior heat resistance can be produced by the process in which activated carbon fibers having a thickness of 1 to 30 &mgr;m and a BET specific surface area of 700 to 1500 m2/g are reacted with a silicon and/or silicon oxide gas at 1200 to 1500° C. under a reduced pressure or in an inert gas atmosphere; and the resultant SiC fibers are heat treated in the presence of a boron-containing substance and optionally a carbon-containing substance at 1700 to 2300° C. in an inert gas atmosphere, wherein the fibers may be in the form of a shaped article, for example, a sheet or honeycomb structure.

Abstract: A method for isothermic, isobaric chemical vapor infiltration (CVI) of refractory substances, especially of carbon (C) and silicon carbide (SiC), based on diffusion in a porous structure, whereby the pressure of the gas or partial pressure of an educt gas contained in the gas and the dwell time of the gas in the reaction zone are set at a given temperature in the reaction zone so that a deposition reaction occurs in the porous structure in the area of pressure or partial pressure of the saturation adsorption of the gaseous compounds forming the solid phase, saturation adsorption meaning that the deposition speed remains substantially constant at increased pressure of the gas or partial pressure of the educt gas. The reaction of the educt gas is limited in such a way that no more than 50% of the elements in the educt gas as it flows through the reaction zone are deposited as a solid phase in the porous structure.