Abstract: A metal oxide-polymer laminate includes a polymer layer, and a metal oxide layer laminated on a surface of the polymer layer and formed by an aerosol deposition method. At least a portion of the metal oxide layer is embedded in the polymer layer in a thickness direction thereof.

Abstract: Vacuum deposited thin films of material are described to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.

Abstract: The present invention relates generally to methods for producing metallic products comprising a substrate and a metallic, external coating. In preferred embodiments, the metallic products are jewelry articles.

Abstract: The present invention relates generally to methods for producing a coated jewelry article or a coated component of a jewelry article, comprising a jewelry article or a component of a jewelry article, a first metallic coating, and a second metallic coating.

Abstract: A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process.

Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

Abstract: A coated article includes a substrate and an anti-fingerprint film formed on the substrate. The anti-fingerprint film is a mixture layer of tin and polyformaldehyde, a mixture layer of indium and polyformaldehyde, or a polyformaldehyde layer. The anti-fingerprint film has an excellent abrasion resistance. A method for making the coated article is also described.

Abstract: Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.

Abstract: A method for forming a chromium nitride coating over a substrate to provide a chromium nitride coated article, and the resulting chromium nitride coated article, each use a bilayer chromium nitride containing material layer. The bilayer chromium nitride containing material layer includes: (1) a first chromium nitride material layer having a first thickness, a first uniform chromium concentration and a first uniform nitrogen concentration located and formed closer to a substrate which provides the article; and (2) a second chromium nitride material layer having a second thickness, a second increasingly graded chromium concentration and a second decreasingly graded nitrogen concentration located and formed upon the first chromium nitride material layer. This particular bilayer chromium nitride containing material layer provides the article with superior reflectivity and crack resistance.

Abstract: A high surface area catalyst with a mesoporous support structure and a thin conformal coating over the surface of the support structure. The high surface area catalyst support is adapted for carrying out a reaction in a reaction environment where the thin conformal coating protects the support structure within the reaction environment. In various embodiments, the support structure is a mesoporous silica catalytic support and the thin conformal coating comprises a layer of metal oxide resistant to the reaction environment which may be a hydrothermal environment.

Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Abstract: A hard-coated member comprising a substrate made of cemented carbide or high-speed steel and a titanium carbonitride layer formed on the substrate by a chemical vapor deposition method, the titanium carbonitride layer comprising first to third layers each having a columnar crystal structure in this order from the side of the substrate, the second layer being smaller than the first layer in carbon concentration, and the third layer being smaller than the second layer in carbon concentration, and an indexable rotary tool comprising it. The first layer is formed by using a starting material gas comprising a TiCl4 gas, an N2 gas, a C2-C5 hydrocarbon gas and an H2 gas, the second layer is formed by using a starting material gas comprising a TiCl4 gas, an N2 gas, an organic cyanide gas, a C2-C5 hydrocarbon gas, and an H2 gas, and the third layer is formed by using a starting material gas comprising a TiCl4 gas, an N2 gas, an organic cyanide gas, whose amount is smaller than in the second layer, and an H2 gas.

Abstract: The device for performing continuous deposition of a solid hydrogen and/or deuterium film includes a cell provided with a control valve for controlling the flowrate of the gas inlet to the cell, a strip, and means for moving the strip in the cell. The device includes a pumping device placing a volume of the cell, through which the strip passes, at a first pressure, and a heat exchanger arranging the strip in said volume at a first temperature. To adjust the pressure, the device further includes a control circuit of the pumping device and of the control valve, adjusting the first pressure so as to condense a solid hydrogen and/or deuterium film on the strip in movement in said volume.

Abstract: The invention relates to vaporization source, an evaporation chamber, a coating method and a nozzle plate. The vaporization source according to the invention makes it possible to generate a high, stable melt flow rate having improved layer thickness homogeneity under vacuum conditions in a selenium atmosphere. The direction of the molecular flow of the vaporization source can be adjusted with respect to the substrate support located above the vaporization source.

Abstract: A cutting tool insert for machining by chip removal comprising a body of a hard alloy of cemented carbide, cermet, ceramics or cubic boron nitride based material onto which a hard and wear resistant coating is deposited by CVD, and the methods of making and using the same. The coating includes at least one ?-Al2O3 layer with a thickness between 0.5 ?m and 40 ?m having a {01-15} and/or {10-15} texture exhibiting excellent wear and metal cutting performance.

Abstract: Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.

Abstract: Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.

Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed.

Abstract: A process for producing a semiconductor device, in which in the formation of a boron doped silicon film from, for example, monosilane and boron trichloride by vacuum CVD technique, there can be produced a film excelling in inter-batch homogeneity with respect to the growth rate and concentration of a dopant element, such as boron. The process includes the step of performing the first purge through conducting at least once of while a substrate after treatment is housed in a reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto and the steps of performing the second purge through conducting at least once of after carrying of the substrate after treatment out of the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace and while at least no product substrate is housed in the reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto.

Abstract: A process for producing a semiconductor device, in which in the formation of a boron doped silicon film from, for example, monosilane and boron trichloride by vacuum CVD technique, there can be produced a film excelling in inter-batch homogeneity with respect to the growth rate and concentration of a dopant element, such as boron. The process includes the step of performing the first purge through conducting at least once of while a substrate after treatment is housed in a reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto and the steps of performing the second purge through conducting at least once of after carrying of the substrate after treatment out of the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace and while at least no product substrate is housed in the reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto.

Abstract: Coated cemented carbide inserts are particularly useful for wet or dry milling steels. The inserts are formed by a cemented carbide body including WC, NbC and a W-alloyed Co binder phase, and a coating including an innermost layer of TiCxNyOz, with equiaxed grains, a layer of TiCxNyOz with columnar grains and a layer of ?-Al2O3.

Abstract: The present invention provides an appliance for chip removal applications comprising a vibration-damping material wherein the vibration-damping material is a material arranged by nano-dimensional cluster form. The present invention additionally provides a method for manufacturing said appliance. The present invention provides also an appliance obtainable by said method. Additionally the present invention provides an article or work piece for use in an appliance for chip removal applications. Also a computer program is provided for controlling the above method.

Abstract: A method of stabilizing a frequency of a piezoelectric vibration element includes: disposing the piezoelectric vibration element in an atmosphere of a vapor of a ring-shaped dimethylpolysiloxane molecule, the piezoelectric vibration element having a metal layer on a surface of a piezoelectric substrate formed of a thickness slip based piezoelectric material; and making the ring-shaped dimethylpolysiloxane molecule subject to chemical absorption with a surface of the metal layer to form a layer of the ring-shaped dimethylpolysiloxane molecule.

Abstract: Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.

Abstract: To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramic powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal.

Abstract: A methodology and system for applying coatings onto the interior surfaces of components, includes a vapor creation device, a vacuum chamber having a moderate gas pressure and an inert gas jet having controlled velocity and flow fields. The gas jet is created by a rarefied, inert gas supersonic expansion through a nozzle. By controlling the carrier gas flow into a region upstream of the nozzle an upstream pressure is achieved. The carrier gas flow and chamber pumping rate control the downstream pressure. The ratio of the upstream to downstream pressure along with the size and shape of the nozzle opening controls the speed of the gas entering the chamber. Vapor created from a source is transported into the interior regions of a component using binary collisions between the vapor and gas jet atoms. These collisions enable the vapor atoms to scatter onto the interior surfaces of the component and deposit.

Abstract: The present invention relates to a vacuum deposition facility for depositing a metal alloy coating on a substrate (7), said facility being equipped with a vapour generator/mixer comprising a vacuum chamber (6) in the form of an enclosure provided with means for creating a vacuum state therein relative to the external environment and provided with means for the entry and exit of the substrate (7), while still being essentially sealed from the external environment, said enclosure including a vapour deposition head, called the injector (3), configured so as to create a jet of metal alloy vapour of sonic velocity towards the surface of the substrate (7) and perpendicular thereto, said ejector (3) being in sealed communication with a separate mixer device (14), which is itself connected upstream to at least two crucibles (11, 12) respectively, these containing different metals M1 and M2 in liquid form, each crucible (11, 12) being connected to the mixer (14) by its own pipe (4, 4?).

Abstract: A coating is formed by depositing the coating on a metallic feature at a deposition temperature. Subsequently, the deposited coating and the metallic feature are cooled below the deposition temperature. The coating is chosen such that this cooling step causes the coating to induce a tensile stress in the metallic feature sufficient to substantially suppress the growth of metallic whiskers on that metallic feature. The coating thereby acts to suppress the growth of metallic whiskers.

Abstract: Disclosed and described are multi-component inorganic phosphate formulations of acidic phosphate components and basic oxide/hydroxide components. Also disclosed are high solids, atomizable compositions of same, suitable for spray coating.

Abstract: According to the present invention, a method for depositing an ultra-fine crystal particle polysilicon thin film supplies a source gas in a chamber loaded with a substrate to deposit a polysilicon thin film on the substrate, wherein the source gas contains a silicon-based gas, an oxygen-based gas and a phosphorous-based gas. The mixture ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or lower (but, excluding zero). Oxygen in the thin film may be 0.8 atomic percent or lower (but, excluding zero).

Abstract: A multi-layer thin film for encapsulation and the method thereof are provided. The multi-layer thin film for encapsulation includes a protective layer composed of aluminum oxide, a single or double barrier layer composed of silicon nitride (SiNx), and a mechanical protective layer composed of silicon dioxide (SiO2). The multi-layer thin film can be economically fabricated by using the existing equipment, and has a high level of light transmission over 85% while showing a low level of oxygen and moisture penetration. Additionally, due to superior adhesive strength between the thin films, and high resistance against impacts by heat or ion during a fabricating process, reliability of fabrication is enhanced, and it can thus efficiently used in encapsulating an organic light-emitting device (OLED), a flexible organic light emitting device (FOLED) in a display field, and the cells such as a thin film battery and a solar cell.

Abstract: An organic-inorganic hybrid material comprising two phases: a first, mineral phase comprising a structured mesoporous network with open porosity; and a second, organic phase comprising an organic polymer, said organic phase being essentially not present inside the pores of the structured mesoporous network. Membrane and electrode comprising this material. Fuel cell comprising at least one such membrane and/or at least one such electrode. Process for preparing said hybrid material.

Abstract: An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O3 or O2 is used as the oxidizer. It is absolutely necessary to introduce the second organic metal compound source material immediately before the introduction of the oxidizer.

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: The present invention provides a multiple layer film comprising a substrate layer and a multiple layer having two or more sub-layers formed by use of a single target material, provided on at least one side of the substrate layer; and a method for manufacturing the same.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

Abstract: A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: This invention discloses a method of making an oxygen scavenging particle comprised of an activating component and an oxidizable component wherein one component is deposited upon the other component from a vapor phase and is particularly useful when the activating component is a protic solvent hydrolysable halogen compound and the oxygen scavenging particle is a reduced metal.

Abstract: An atomic layer deposition (ALD) method is utilized to deposit a thin film barrier layer of a metal oxide, such as titanium dioxide, onto a substrate. Excellent barrier layer properties can be achieved when the titanium oxide barrier is deposited by ALD at temperatures below approximately 100° C. Barriers less than 100 angstroms thick and having a water vapor transmission rate of less than approximately 0.01 grams/m2/day are disclosed, as are methods of manufacturing such barriers.

Abstract: Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R1 is selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R2 is selected from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl; R4 is a branched alkylene bridge with at least one chiral center; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal

Abstract: Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R2 is selected from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is a branched alkylene bridge with at least one chiral center; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract: Embodiments of this apparatus and method introduce solutes into a sheet formed from a melt. A melt of a material is cooled and a sheet of the material is formed in the melt. A first fluid is introduced around the sheet at least partially while the sheet is formed. A second fluid also may be introduced. In one instance, use of the first fluid and second fluid may form a sheet that has two different solute concentrations.

Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

Abstract: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

Abstract: Embodiments related to chemical vapor deposition of aluminum nitride onto surfaces are provided. In particular, methods are provided for coating AlN onto solid surfaces by heating and vaporizing an aluminum nitride precursor and exposing solid surfaces to the heated and vaporized aluminum nitride precursor. In an embodiment, the aluminum nitride precursor is AlCl3(NH3)x, wherein x=1-6. In an embodiment, the surface is a metallic substrate, such as a silicon, aluminum nitride, steel, aluminum, molybdenum and manganese. In an embodiment, the surface is steel that is nitrided to form an iron nitride layer on which AlN is deposited.

Abstract: A method of making an insulating glass (IG) window unit is provided. The IG window unit includes at least two spaced apart substrates that are separated from one another by at least one seal and/or spacer, wherein a first one of the substrates supports a hydrophilic coating (e.g., silicon oxide) on the surface facing the building exterior and either of the substrates supports a solar management coating (e.g., a low-emissivity coating) for blocking infrared radiation.

Abstract: This invention discloses a method of making an oxygen scavenging particle comprised of an activating component and an oxidizable component wherein one component is deposited upon the other component from a vapour phase and is particularly useful when the activating component is a protic solvent hydrolysable halogen compound and the oxygen scavenging particle is a reduced metal.

Abstract: A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.