Abstract: A process for producing low-density, porous silica films in a vacuum environment is provided. The films are advantageous for use as low dielectric constant insulating materials in semiconductor devices. In a first step, an organic-group-containing silica precursor is deposited on a semiconductor substrate in a chemical vapor deposition reactor. In a second step, the organic groups are removed by heating in a furnace in an oxidizing environment or by exposure to an oxidizing plasma, thereby creating a low density silica film.

Abstract: The invention relates to a process for the production of a cerametallic composite part containing a phase rich in Al.sub.2 O.sub.3 which is permeated by a metallic phase consisting predominantly of aluminides, in which process a preform that may have been sintered and comprises at least one oxidic compound reducible by aluminium and maybe also non-oxidic compounds or elements is reacted with molten aluminium or aluminium alloy until aluminide and Al.sub.2 O.sub.3 have formed at least in the surface layer. Composite parts fabricated in this way can serve as wear-resistant or/and high-temperature-resistant components in the construction of machinery, apparatus, engines and turbines, for applications under corrosive or/and oxidizing conditions, as functional elements, especially high-performance brake elements and as electrical or magnetic functional elements.

Abstract: In a method and an appratus for a thin film growth on a semiconductor crystal substrate, impurities and contaminants absorbed on the inside wall of the reaction vessel are very harmful because these impurities and contaminants will deteriorate the quality of the thin film. A method and an apparatus by which the quantity of these impurities and contaminants absorbed on the inside wall of the reaction vessel can be restrained and removed easily are disclosed in this invention, wherein a semiconductor crystal substrate is mounted in the reaction vessel, and the wall of the reation vessel is cooled forcibly by a coolant while the substrate is under heating procedure to grow a thin film on the substrate by supplying the raw material gas into the reaction vessel. And the temperature of the wall of the reaction vessel during the procedure except the thin film growth is kept higher temperature than the temprature of the wall of the reaction vessel during the thin film growth procedure.

Abstract: An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

Abstract: A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50.degree. C. to about 500.degree. C. for a period of time sufficient to deposit a copper-based film on said substrate.

Abstract: The present invention relates to coating and printing methods for the deposition of aqueous compositions. The composition may be adapted to any method without the need to change its chemical content. Viscosity is determined and adjusted by rising and lowering the temperature. High gloss value, increased film integrity and enhanced more resistance result.

Abstract: A process for decorating and/or coloring tile- or slab-shaped stone-like artificial or composite materials comprises the application of one or more sublimate colors to the surface to be decorated and/or colored, said application being carried out at a temperature range from about 50.degree. C. to 250.degree. C., said sublimate colors being supported on a suitable carrier. A natural or synthetic resin is mixed into the original composition of said artificial material in order to enhance the migration of color pigments through the tile or slab surface during the sublimation process. Thereby a good penetration of the color into the slab is achieved, and the color is still visible even after having removed the polished surface of the slabs by means of grinding.

Abstract: The invention relates to a method of coating an optical fiber, the method comprising the following steps: applying a polymerizable coating material to the surface of the optical fiber; and polymerizing said material to obtain a coating. In the method, the optical fiber prior to application of said material is raised to a value T determining the value T' of the temperature at which said material polymerizes.

Abstract: A method for coating an inner surface of a metal tube comprises supplying a hot-melt resin powdery paint floating in air together with an air stream into the metal tube which has been pre-heated and rotating around it's horizontal center axis. An apparatus used for the method comprises a rotating means for supporting and rotating the metal tube, fluidizing bed tank for floating the powdery paint in air, a paint supply pipe, an air pipe and a Y-shaped mixing pipe through which the powdery paint is supplied to the inside of the metal tube in the form of a jet. The inner surface of the metal tube can be coated uniformly in a very short period of time.

Abstract: The invention relates to a water-repellent glass plate. This glass plate has a glass substrate having a major surface and a water-repellent film formed on the major surface of the glass substrate. The water-repellent film is prepared by an application of a water-repellent agent which is in a liquid form, to the major surface of the glass substrate, while the glass substrate is heated at a temperature of from 90 to 200.degree. C. The glass plate is superior in water repellency duration even under severe environment.

Abstract: A film-forming method and apparatus for forming a deposited film on a substrate employing plasma generated by a raw material gas for film formation in a film-forming chamber involves several steps. The method includes arranging a deposition preventive member in the film-forming chamber so that the deposition preventive member prevents a film from being deposited on an inner wall of the chamber during film formation. A heater and a cooler are alternately arranged on a face of the deposition preventive member. Prior to commencing film deposition, the deposition preventive member is heated using the heater. During film formation, the deposition preventive member is cooled by the cooler to prevent the deposition preventive member from releasing contaminants.

Abstract: A surface coating applied on a substrate as well as a method of preparing a surface coated substrate are provided. A mixture comprising about 40% polyvinyl acetate and about 60% polyvinyl alcohol is applied to a porous substrate. Then, the mixture is heated. The polyvinyl alcohol cures by evaporation, and the mixture separates into a hydrophilic layer of polyvinyl alcohol and a hydrophobic layer of polyvinyl acetate, and the hydrophilic layer is between the hydrophobic layer and the substrate. A water-soluble ink is then deposited into the surface coating, and the ink is generally repelled by the hydrophobic layer, and is generally absorbed by the hydrophilic layer. Additionally, the hydrophobic layer protects from fading the ink which is absorbed into the hydrophilic layer, causes the ink to spread less in the hydrophilic layer, allows a charge to be applied to the same side of the substrate on which the ink is deposited, and allows an enhanced surface charge to be applied.

Abstract: A process for preparing silicon granules with a chlorine contamination below 50 ppm by weight by deposition of elemental silicon on silicon particles in a fluidized-bed reactor. This reaction has a heating zone below a reaction zone. The silicon particles, in the heating zone, are fluidized by means of an inert silicon-free carrier gas to produce a fluidized bed and are heated by means of microwave energy. The silicon particles are reacted within the reaction zone, a reaction gas made up of a silicon source gas and the carrier gas. The average temperature of the reaction gas in the reaction zone, while the gas is perfusing the fluidized silicon particles, is maintained at less than 900.degree. C. The average temperature of the fluidized silicon particles in the reaction zone, while they are being perfused by the reaction gas, is maintained at greater than 900.degree. C.

Abstract: A method of producing a phosphor having high brightness is provided, and the method includes the steps of firing raw materials of phosphor, washing the resulting fired material, ball-milling the washed material with one or more dispersion agents, coating the ball-milled material with pigment, and drying the coated material. The dispersion agent is preferably a compound selected from the group consisting of silicate compounds, sodium polycarbonate, and alcohols.

Abstract: An apparatus for applying a coating to the head-shank junction of externally threaded fasteners in an automated fashion. The fasteners are positioned, head down, on rotating part holders positioned about the periphery of a rotating disc. The part holders may be magnetic or other forms, and are adapted to maintain the fasteners in a generally fixed position during their movement. The fasteners are pre-heated at a heating station during their rotational movement on the disc. A dispenser is then used to apply the coating to the articles, in timed sequence to the movement of the articles. In this fashion, a coating can be applied to selected portions of the entire periphery of the head-shank junction. A method for applying a coating to the head-shank junction of externally threaded fasteners in an automated fashion also forms part of the present invention.

Abstract: A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, Ni.sub.x Co.sub.1-x O (0.1.ltoreq.x.ltoreq.0.9) and C.sub.o O. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc.sub.2 of the other ferromagnetic thin film.

Abstract: A fuser member for fixing toner to a recording medium having a fluoropolymer non-stick topcoat on a compliant silicone rubber baselayer bonded to a metallic insert is provided. The fluoropolymer is adhered to the silicone rubber baselayer using a primer of a blend of silane and a polyamide resin. The primed silicone baselayer is preheated in an infrared oven to remove low molecular weight fractions. A primer is applied to the prebaked rubber and completely dried before applying the fluoroelastomer topcoat by spaying.

Abstract: The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.

Abstract: The invention concerns the production of a pre-mixed porous polymeric composition wherein granules of rubber are encapsulated with a first pre-polymer which is cured, a second uncured pre-polymer is then mixed with the encapsulated granules in a substantially moisture-free environment, the mixture is deposited into containers substantially impermeable to water vapor and is then stored for later use so that without further mixing it may be applied to a suitable sub-base surface and the second pre-polymer is allowed to polymerize by reaction with water.

Abstract: A method for providing a uniform coating of photoresist over substrate for defining high density integrated device and circuit patterns. This is accomplished by applying the photoresist onto the substrate in multiple, separate dispensing steps and leveling spins to attain the designed thickness uniformly over substrate having high topographic surfaces, thereby preserve the integrity of the critical dimension for multi-level alignments used in the fabrication of integrated devices and circuits.

Abstract: Structural ceramic matrix composite material to be employed as automotive engine parts and the like is provided with erosion-resistant qualities in several ways. For one, an erosion-resistant material is applied to the surface as by plasma spraying. The erosion-resistant material can also be mixed with the fibers of the material, particularly near the surface.

Abstract: A method for making an apertured film for use as a topsheet in absorbent products wherein the film is corona treated on one side, and has received a surfactant application that is distributed to both the corona treated and non-corona treated sides of the film. A method for application of surfactant includes applying the surfactant to one side of the film and rolling the film into a roll while the surfactant is still wet in order to apply surfactant to both sides of the film.

Abstract: A process of bonding a plastic is provided. The process comprises applying to a plastic surface an aqueous dispersion of a hydroxyl-functional polyurethane prepolymer obtained by:(1) reaction of:a polyol component containing a polyester polyol,a compound selected from the group of compounds containing groups capable of salt formation and at least two isocyanate-reactive groups,an isocyanate component in a stoichiometric excess, at least 20% by weight of said component consisting of tetramethyl xylylene diisocyanate, and(2) subsequent dispersion in water and at least partial reaction of the remaining NCO groups with an aminoalcohol and, optionally, subsequent chain extension. The process further comprises drying said applied aqueous dispersion to form a primer and bonding said plastic surface having said primer to a part to be joined thereto. The process is particularly useful for priming plastics such as polyvinyl chloride.

Abstract: A nonaqueous secondary battery comprising a negative electrode, a positive electrode in which a chalcogenated substance containing lithium is used as a positive electrode active material and a nonaqueous ion conductor, said negative electrode containing a negative electrode active material which is a carbon material where an amorphous carbon is adhered on the surface of graphite particles which are subjected to an oxidizing treatment.

Abstract: A ceramic, metal, or metal alloy surface is covered with lithium permangae which is then thermally decomposed to produce a corrosion resistant coating on the surface. This coating serves as a primer coating which is preferably covered with an overcoat of a sealing paint.

Abstract: A metal-semiconductor layer (26) is formed over an insulating layer (20) such that the metal-semiconductor layer (26) is graded to have varying amounts of the semiconductor and metal throughout the layer. In one embodiment, the metal-semiconductor layer (26) has relatively higher silicon content near the layer's lower and upper surfaces. At the midpoint, the layer is close to stoichiometric tungsten silicide. In another embodiment, a metal-semiconductor-nitrogen layer is formed having nitrogen nearer the lower surface and essentially no nitrogen near the upper surface. The layer (26) can be formed using chemical vapor deposition or sputtering.

Abstract: A method for producing an information recording medium is disclosed. The method comprising the steps of (1) applying a surface treatment on a surface of a film support so that the atomic percentage of oxygen at said surface is increased by 1.0 atomic-% to 10 atomic-% compared to the atomic percentage of oxygen at said surface before treatment, (2) providing a subbing layer comprising a water-soluble or water-dispersible polymer having a 2-oxazoline group represented by Formula A on said treated surface of the film support so that the subbing layer is directly adjoined to said surface, and (3) providing an information recording layer on said subbing layer, ##STR1## wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each independently a hydrogen atom, a halogen atom, an alkyl group, an aralkyl group, a phenyl group.

Abstract: Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

Abstract: A grain growth accelerator in a form dispersed in an aqueous solution or an organic solvent is introduced into a preliminarily fired body, and thereafter the preliminarily fired body is fired in a main firing process. In the main firing process, a volumetric diffusion of metal and grain growth of ceramic particles are caused as the firing temperature increases. Therefore, it is possible to manufacture a composite material which has such a gradient function that it is ceramic-rich on its surface and metal-rich in its inside, a high degree of surface hardness and toughness, and an interface-free structure.

Abstract: A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film.The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.

Abstract: The present invention provides a novel method of reducing the amount of seed deposited on polymeric dielectric surfaces. The method comprises the following steps: providing a work-piece coated with a polymeric dielectric layer; baking the work-piece to modify the surface of the polymeric dielectric layer; then applying the seed to polymeric dielectric layer and electrolessly plating metal to the seed layer. The invention also relates to a circuit board produced by the method of the present invention.

Abstract: Disclosed is an industrial technique for electrode processing for the direct recoating of an electrode surface for use in an electrochemical process wherein the recoating operation is performed without disassembly of the electrode assembly. In the process, a coating solution is applied to the electrode surface and a temperature differential is established, or induced, and maintained between the electrode surface and other components of the assembly while the coating is cured on the electrode surface.

Abstract: An aluminum oxide film is economically and conveniently deposited on a substrate by a process which comprises vaporizing a dialkylaluminum alkoxide compound at a temperature ranging from 0 to 25.degree. C. and contacting the resulting vapor with said substrate heated to a temperature ranging from 300 to 600.degree. C.

Abstract: A plurality of transporter robots are provided on respective rails. Each semiconductor substrate is transported by a first robot from an indexer to processing units and then to a cooling plate. The second robot comes to the cooling plate and transports the substrate to other processing units. The cooling plate is used as an interface for the exchange of the substrate between the robots. No liquids nor gasses are applied to the substrate in the cooling plate and the substrate is passed to the next robot without contamination. No dedicated buffers are required, and thereby the size of the apparatus is reduced.

Abstract: At least the surface region of a cutting tool substrate made of tungsten carbide in a cobalt matrix is carburized to chemically passivate the cobalt prior to deposition of diamond film on it. The passivation improves adhesion by preventing reaction of the cobalt with the diamond in the course of the deposition process.

Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract: The present invention provides a method of modifying the surface of a polymeric substrate, e.g., to improve the wettability of the polymer film surface and/or affix silicon-containing structures to the substrate surface, comprising exposing the substrate to a flame. The flame is supported by a fuel and oxidizer mixture that includes at least one silicon-containing compound that functions as a fuel and is in an effective amount for modifying the surface of the polymeric substrate. Also disclosed are substrates with surfaces that are modified by exposing the substrate to a flame that is supported by the process of the invention. Large increases in the ASTM wetting test, e.g., greater than 13 mJ/m.sup.2 over that reported with conventional flame-treating processes, have been observed in polymeric substrates treated according to this invention.

Abstract: The present invention is an apparatus and method for mixing a plurality of materials in-situ to form an admixture and heating a localized portion of admixture upon dispense. The heat thereby primarily effects the speed of chemical reaction and curing of only the exiting reactants with little effect upon the admixture not dispensed. The apparatus and process are especially useful for encapsulating a plurality of workpieces at a high throughput. Advantageous configurations are described such as wherein the workpieces and/or the dispensing mechanism may be mounted on a carrier and fed by an assembly line. Alternative admixture chemistries are described.

Abstract: A process for coating a tungsten carbide base material substrate with CVD diamond film includes carburization and gas-assisted vaporization of cobalt from the surface with simultaneous recrystallization of surface grains of tungsten carbide to change their stoichiometry for improved adherence.Also disclosed is a WC-Co cutting tool having a relatively fine WC grain size and coated with adherent CVD diamond.

Abstract: The process and apparatus of the present invention teaches how to treat a well-integrated woven or non-woven web of hydrophobic fibers to make selective areas hydrophyllic. It also can be used to make a web of hydrophyllic fibers selectively hydrophobic. It uses a plurality of selectively adjustable covers on an applicator roll rotating in a bath of liquid to place the liquid material on selective areas of the moving web. In a preferred embodiment the web is non-woven and the fibers are hydrophobic in nature, e.g., dry-laid or melt-blown polypropylene or polyethylene fibers or spun-bonded hydrophobic filaments. A woven web made of cotton or other hydrophyllic fibers may also be used if the end result is to create partially hydrophobic areas on a hydrophyllic web. The areas of liquid are positioned on the web only where desired so as to eliminate the excessive cost of unwanted and unnecessary coating material. If the web is hydrophobic, the liquid makes that area hydrophyllic.

Abstract: A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.

Abstract: A method of producing amorphous silicon layers on a substrate by chemical vapor deposition at elevated pressures of at least about 25 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain an amorphous silicon deposit of predetermined microcrystalline density, and the silicon precursor gases fed to the chamber to a preselected high pressure. Doped amorphous silicon films also can be deposited at high deposition rates.The above amorphous silicon films have a low density of nucleation sites; thus when the films are annealed, polycrystalline films having large crystal grains are produced.

Abstract: The invention is a method of plating a nonmetallic substrate comprising the steps of depositing an adhesion enhancing film on the substrate, treating the adhesion enhancing film to make the film catalytic, and forming an outer coating and passivating plate on the adhesion enhancing film. The resulting plated, nonmetallic substrates may comprise any number of materials used as an inner substrate such as compounds of oxide, nitride, phosphide, carbide, glass, ceramic, and mixtures thereof. In use, the resulting substrate may find application in any number of data storage and retrieval application.

Abstract: A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.

Abstract: To improve the reduction in tensile strength due to aging as well as the recovery, a weak acid is applied to a glass fiber mat containing a phenolic condensation resin binder before the binder is hardened.

Abstract: A ceramic welding process for forming a coherent refractory mass on a surface of a refractory which is hot and which is comprised of at least one silicon compound includes providing a mixture composed of combustible particles including silicon particles, refractory particles which are silicon carbide particles and which constitute a major portion by weight of the mixture, and particles of one of (a) another substance selected from the group consisting of CaO, MgO, FeO, and mixtures thereof or (b) particles of a nonmetallic precursor of the another substance, which another substance causes incorporation of silica, formed by combustion of the silicon particles, into a crystalline lattice of a compound formed between the silica and the another substance within the coherent refractory mass being formed; and projecting the mixture against the surface of the refractory, simultaneously with substantially pure oxygen, so that the combustible particles react in an exothermic manner by combusting with the projected oxy

Abstract: A magnetic recording medium is formed with a laser textured glass, ceramic or glass-ceramic substrate. The use of a pulsed, focused laser light beam, such as a CO.sub.2 derived laser light beam, through an acoustic-optical modulator enables the use of a high pulse repetition rate and/or short pulses. The resulting laser textured substrate comprises a plurality of dome-like protrusions extending above the substrate.

Abstract: Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

Abstract: A thin film magnet and a cylindrical ferromagnetic thin film having a high maximum energy product (greater than 120 kJ/m.sup.3) and thus suitable for use in miniature high performance devices are provided. The thin film magnet is produced by means of physical vapor deposition. The thin film magnet is an (Nd.sub.1-x R.sub.x).sub.y M.sub.1-y-z B.sub.z alloy having a ferromagnetic compound of the Nd.sub.2 Fe.sub.14 B type as its main phase, wherein R is Tb, Ho, and Dy and M is Fe metal or an Fe-based alloy including at least one of Co and Ni, 0.04.ltoreq.x.ltoreq.0.10,0.11.ltoreq.y.ltoreq.0.15, and 0.08.ltoreq.z.ltoreq.0.15. A perpendicular magnetization film having such a composition is deposited on the side wall of a substrate in the columnar (or cylindrical) form thereby obtaining a cylindrical ferromagnetic thin film having radial anisotropy.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer.