Vacuum, Vapor, Or Gas Other Than Air Utilized Patents (Class 427/374.6)
-
Patent number: 10641329Abstract: A porous ultrasonic bearing includes a ring, a high-strength outer casing, a bearing bushing and a vibration collar. The high-strength outer casing is sheathed on the bearing bushing, and a group of radial holes that penetrate are provided on the bearing bushing. The vibration collar is arranged between the high-strength outer casing and the bearing bushing. The outer cylindrical surface of the vibration collar is fixedly connected to the inner hole of the high-strength outer casing. A gap is provided between the inner hole of the vibration collar and the outer cylindrical surface of the bearing bushing. The vibration collar radially vibrates at high frequency. A high-strength lubricating oil film is formed between the inner hole of the bearing bushing and the shaft, so that the friction between the inner hole of the bearing bushing and the shaft is reduced.Type: GrantFiled: May 9, 2019Date of Patent: May 5, 2020Assignee: Shunde PolytechnicInventors: Xuefeng Chen, Mingxia Tu
-
Patent number: 8999449Abstract: A method for making a composite polyamide membrane including the step of applying a polyfunctional amine monomer and polyfunctional acyl halide monomer to a surface of the porous support and interfacially polymerizing the monomers to form a thin film polyamide layer, wherein the method is characterized by: i) conducting the interfacial polymerization in the presence of an aromatic anhydride monomer include at least one sulfonyl halide functional group, or ii) applying the aromatic anhydride monomer to the thin film polyamide layer.Type: GrantFiled: March 5, 2014Date of Patent: April 7, 2015Assignee: Dow Global Technologies LLCInventors: Mou Paul, Tina L. Arrowood, Duane R. Romer
-
Publication number: 20120308722Abstract: Methods for improving the strength of glass substrates are described. One such method for strengthening a glass disk substrate for a storage device includes immersing at least a portion of the glass substrate in a solution, the solution including a solvent and a coating material selected from the group consisting of NaOH, KOH, and KNO3, removing the glass substrate from the solution, allowing the solvent to evaporate from the glass substrate, and heating the glass substrate at a preselected temperature for a preselected duration, where the preselected temperature is sufficient to substantially melt the coating material and is less than a transition temperature of the glass substrate.Type: ApplicationFiled: June 3, 2011Publication date: December 6, 2012Applicant: WD MEDIA, INC.Inventors: SHOJI SUZUKI, CHRIS BRISKO
-
Patent number: 7842356Abstract: Substrate processing methods involve forming an insulating film of amorphous carbon on a substrate by supplying acetylene gas and hydrogen gas with a volume ratio of 4:3 to 4:1, or alternatively, butyne gas, into a process vessel in which the substrate is accommodated. The methods further involve generating a plasma inside of the process vessel by emitting a microwave. The pressure inside of the process vessel is maintained to be 4.0 Pa or less and the substrate is maintained to be 200° C. or less while the insulating film is formed.Type: GrantFiled: June 15, 2006Date of Patent: November 30, 2010Assignee: Tokyo Electron LimitedInventor: Hiraku Ishikawa
-
Patent number: 7829138Abstract: A Ni alloy layer is formed on a surface of a steel base on the side to be in direct contact with a molten aluminum alloy, and titanium carbide (TiC) is bonded in a particulate state to the surface of the Ni alloy layer. This makes it possible to provide a metal material having materially enhanced melting loss resistance without resorting to conventional techniques, such as the provision of a ceramic coating by PVD or CVD.Type: GrantFiled: March 22, 2005Date of Patent: November 9, 2010Assignee: Toshiba Kikai Kabushiki KaishaInventors: Jun Masuda, Shuhei Homma, Ryousuke Fujimoto
-
Patent number: 7763320Abstract: The purpose of the invention is to provide a film formation apparatus capable of forming an EL layer with a high purity and a high density, and a cleaning method. The invention is a formation of an EL layer with a high density by heating a substrate 10 by a heating means for heating a substrate, decreasing the pressure of a film formation chamber with a pressure decreasing means (a vacuum pump such as a turbo-molecular pump, a dry pump, or a cryopump) connected to the film formation chamber to 5×10?3 Torr (0.665 Pa) or lower, preferably 1×10?3 Torr (0.133 Pa) or lower, and carrying out film formation by depositing organic compound materials from deposition sources. In the film formation chamber, cleaning of deposition masks is carried out by plasma.Type: GrantFiled: September 21, 2007Date of Patent: July 27, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakazu Murakami
-
Patent number: 7307772Abstract: A method of producing an electrochromic device, includes the steps of: providing a first electron conducting layer on a substrate, providing a working electrode in communication with the first electron conducting layer, providing an ion conducting layer in communication with the working electrode, providing an ion storage electrode in communication with the ion conducting layer, and providing a second electron conducting layer in communication with the ion storage electrode, wherein at least one and less than all of the providing steps include(s) plasma chemical vapor deposition. An electrochromic device produced by the method of the invention is disclosed, as is an apparatus adapted to perform the method of the invention, including plasma CVD devices and vacuum sputtering devices.Type: GrantFiled: September 11, 2006Date of Patent: December 11, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Diwakar Garg, Philip Bruce Henderson
-
Patent number: 7106488Abstract: A method of producing an electrochromic device, includes the steps of: providing a first electron conducting layer on a substrate, providing a working electrode in communication with the first electron conducting layer, providing an ion conducting layer in communication with the working electrode, providing an ion storage electrode in communication with the ion conducting layer, and providing a second electron conducting layer in communication with the ion storage electrode, wherein at least one and less than all of the providing steps include(s) plasma chemical vapor deposition. An electrochromic device produced by the method of the invention is disclosed, as is an apparatus adapted to perform the method of the invention, including plasma CVD devices and vacuum sputtering devices.Type: GrantFiled: March 23, 2004Date of Patent: September 12, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Diwakar Garg, Philip Bruce Henderson
-
Patent number: 6503849Abstract: A method for forming an insulating film, wherein a precursor film of a coating type insulating film having Si—H bonding is coated, the precursor film is calcined in an atmosphere containing at least one of an inert gas and oxygen gas for converting it into a ceramic film as the insulating film, and then the ceramic film is cooled under reduced pressure lower than that for the calcination.Type: GrantFiled: October 10, 2000Date of Patent: January 7, 2003Assignee: Sharp Kabushiki KaishaInventors: Yoshihiro Ooishi, Yushi Inoue
-
Patent number: 6488986Abstract: A method for imparting an aluminide coating to an alloy gas turbine engine component, heat treating the component, and quenching the component. The component is exposed to a source of aluminum at an elevated temperature in a coating furnace to deposit an aluminum-based oxidation barrier on the component, heated in the coating furnace to a temperature of at least the solution temperature of the alloy, and quenched by flowing a chilled inert gas around the component in the coating furnace to cool the component from the temperature of at least the solution temperature of the alloy to a temperature at which a gamma′ phase of the alloy is set in the alloy in less than about 10 minutes.Type: GrantFiled: January 29, 2001Date of Patent: December 3, 2002Assignee: General Electric CompanyInventors: Nripendra N. Das, Terri K. Brown, Matthew D. Saylor, Brian H. Pilsner, Carl H. Snyder
-
Publication number: 20020132052Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.Type: ApplicationFiled: July 11, 2001Publication date: September 19, 2002Inventors: Devendra Kumar, Jeffrey D. Womack, Vuong P. Nguyen, Jack S. Kasahara, Sokol Ibrani