Modified Condition Of Atmosphere (e.g., Steam, Air Movement, Etc.) Patents (Class 427/377)
-
Patent number: 6063179Abstract: Goniochromatic luster pigments based on silicon dioxide platlets, CVD coated withA) a nonselectively absorbing filmlike layer at least partially transparent to visible light, andB) if desired an outer layer which consists essentially of colorless or selectively absorbing metal oxide and/or comprises phosphate, chromate and/or vanadate,are prepared and used for coloring paints, inks, including printing inks, plastics, glasses, ceramic products and decorative cosmetic preparations.Type: GrantFiled: October 13, 1998Date of Patent: May 16, 2000Assignee: BASF AktiengesellschaftInventors: Raimund Schmid, Norbert Mronga
-
Patent number: 6045867Abstract: A fluorine compound-containing composite material consists essentially of a metal or polymer matrix and particles or fibers of a polytetrafluoroethylene oligomer having a number average molecular weight of 10,000 or less, the proportion of the number of fluorine atoms to the number of the total atoms at the surface portion of the composite material being 40% or more.Type: GrantFiled: January 27, 1997Date of Patent: April 4, 2000Assignees: Nobatsu Watanabe, Yong-Bo Chong, C. Uyemura & Co., Ltd.Inventors: Nobuatsu Watanabe, Yong-Bo Chong, Sowjun Matsumura
-
Patent number: 6042875Abstract: The invention is directed to medical devices having a drug-releasing coating and methods for making such coated devices. The coating permits timed or prolonged pharmacological activity on the surface of medical devices through a reservoir concept. Specifically, the coating comprises at least two layers: an outer layer containing at least one drug-ionic surfactant complex overlying a reservoir layer containing a polymer and the drug which is substantially free of an ionic surfactant. Upon exposure to body tissue of a medical device covered with such coating, the ionically bound drug in the outer layer is released into body fluid or tissue. Following release of such bound drug, the ionic surfactant binding sites in the outer layer are left vacant.Type: GrantFiled: March 2, 1999Date of Patent: March 28, 2000Assignee: Schneider (USA) Inc.Inventors: Ni Ding, Jennifer E. Raeder-Devens, Tuyethoa Thi Trinh
-
Patent number: 6033735Abstract: There is disclosed a method of coating cemented carbide inserts at least partly with a layer of at least one iron group metal. When inserts coated with such a layer are brazed to a tool holder, a joint with improved strength is obtained. According to the present method, one or more metal salts of at least one iron group metal containing organic groups are dissolved and complex bound in at least one polar solvent with at least one complex former comprising functional groups in the form of OH or NR.sub.3 (R.dbd.H or alkyl). A soluble carbon source is added to the solution which is subsequently at least partly applied to the cemented carbide inserts by dipping, spraying or painting. The inserts are dried and heat treated in an inert and/or reducing atmosphere. As a result, cemented carbide inserts are obtained at least partly coated with a layer of an iron group metal.Type: GrantFiled: September 18, 1997Date of Patent: March 7, 2000Assignee: Sandvik ABInventors: Stefan Ederyd, Enrico Galli, Mats Nygren, Gunnar Westin, Asa Ekstrand
-
Patent number: 6033727Abstract: A method for strengthening and aging-prevention of a TZP ceramics includes the steps of: introducing TZP ceramic and Si-based ceramic powders into a furnace in which a water vapor pressure is controlled; and exposing the TZP ceramic next to Si-based ceramic in a flowing H.sub.2 atmosphere containing H.sub.2 O of no more than 0.1%, to form a silica/zircon layer on the surface of the TZP ceramic.Type: GrantFiled: January 22, 1999Date of Patent: March 7, 2000Assignee: Agency for Defense DevelopmentInventors: Yong Kee Baek, Hyoun-Ee Kim, Young Hak Ko, Eul-Son Kang
-
Patent number: 6017645Abstract: Composite material for magnetooptic recording, comprising a thin layer deposited on a non-magnetic solid substrate. The said thin layer is a polycrystalline layer consisting of microcrystals having a structure of a vacant-site spinel ferrite, based on iron, cobalt and transition metals. By virtue of a particular process for producing the thin layers, enabling especially the size of the crystallites to be increased, it is possible to optimize the magnetic and magnetooptic properties and to obtain thin layers having, for example, a remanent Faraday rotation and a coercive field which are greater, respectively, than 1 degree per micron for the Faraday rotation and 1000 Oe for the coercive field.Type: GrantFiled: February 25, 1998Date of Patent: January 25, 2000Assignee: ATG-CygnetInventors: Philippe Tailhades, Jean-Pierre Bonino, Isabelle Pasquet, Lionel Presmanes, Laurence Bouet, Abel Rousset, Patrick Langlade
-
Patent number: 6017579Abstract: A new method (P200) is provided for making magnesium oxide layers (122) in plasma displays (100). A magnesium carboxylate liquid precursor solution is applied to a display panel (102), dried, and annealed to yield a solid magnesium oxide layer (122) having excellent electro-optical performance.Type: GrantFiled: April 14, 1997Date of Patent: January 25, 2000Assignees: Symetrix Corporation, Matsushita Electronics CorporationInventors: Gota Kano, Carlos A. Paz De Araujo, Koji Arita, Michael C. Scott, Larry D. McMillan, Shinichiro Hayashi
-
Patent number: 6013316Abstract: A spin coater drying cover is disclosed having unique properties and construction to enable accurate control of the drying process of an optically active lamina of a Nitrocellulose Dye Polymer solution on a Polycarbonate disc substrate. The cover is configured with an orientation platform allowing micro adjustment of the angle and distance of a porous gas filter disc of the cover in relation to the optically active layer. The filter, essentially parallel and concentric to the disc substrate, can be varied from a flat, concave or convex camber to cause gas flow over the disc substrate to be such that a variable linear ramp of the optically active lamina can be achieved, with a thicker layer at the periphery than at the center of the disc. This enables deeper data pits to be formed at the difficult to mold outer disc periphery, thus increasing yield in a disc mastering process.Type: GrantFiled: February 7, 1998Date of Patent: January 11, 2000Assignee: ODMEInventor: Robert L. Cubit
-
Patent number: 6013322Abstract: A ceramic material is surface treated by contacting the surface of a 312 ternary ceramic material with a surface-modifying compound selected from carburization agents, silicidation agents, nitridation agents and boronization agents, at an elevated temperature of at least about 600.degree. C. for a period of time sufficient to provide a surface reaction layer of at least about one micron in thickness in the surface-treated material, preferably having a surface hardness in excess of about 6 GPa. A product made by the method of this invention is also disclosed having a surface hardness in excess of about 6 GPa, preferably at least about 10 GPa.Type: GrantFiled: July 9, 1999Date of Patent: January 11, 2000Assignee: Drexel UniversityInventors: Michel W. Barsoum, Tamer El-Raghy
-
Patent number: 6013314Abstract: A method of manufacturing a phosphor composition of a phosphor comprising a pigment coating of hematite, includes a first step in which the phosphor is coated with an iron-containing starting compound for hematite, and a second step, in which the phosphor with the coating is calcined, thereby converting the iron-containing starting compound for hematite into hematite. The calcining operation is carried out in an atmosphere of a gas mixture of water vapor and an oxidizing gas.Type: GrantFiled: July 24, 1998Date of Patent: January 11, 2000Assignee: U.S. Philips CorporationInventors: Michael Bredol, Jacqueline Merikhi, Dieter Wadow, Irmgard Kohler
-
Patent number: 6010940Abstract: A method of fabricating a capacitor for a integrated circuit device includes the steps of forming a lower capacitor electrode on an integrated circuit substrate, and forming a dielectric layer on the lower capacitor electrode opposite the integrated circuit substrate. A titanium nitride barrier layer is deposited by chemical vapor deposition on the dielectric layer opposite the integrated circuit substrate to a thickness in the range of 50 .ANG. to 500 .ANG. using TiCl.sub.4 as a source gas. The titanium nitride barrier layer is annealed, and an upper electrode is formed on the titanium nitride barrier layer opposite the integrated circuit substrate.Type: GrantFiled: September 24, 1997Date of Patent: January 4, 2000Assignee: Samsung Electronics Co., Ltd.Inventors: Myoung-bum Lee, Hyeon-deok Lee
-
Patent number: 6001421Abstract: A dry end of a paper machine and a method for drying paper in which a paper web to be dried is passed from a press section of the paper machine into a forward dryer section including only single-wire groups with normal single-wire draw. The web is dried from the side of its bottom face in the dryer groups in the forward dryer section. From the forward dryer section, the web is passed into a finishing section in which the web is coated/surface-sized by a coating/surface-sizing device and then dried in an after-dryer by passing through at least one dryer group that applies a normal single-wire draw. Thereafter, the web is calendered and passed to a reeling station. Curling of the web is controlled by the operation or construction of components and/or by assemblies and combinations formed out of these components provided in connection with the forward dryer section and/or the finishing section.Type: GrantFiled: December 3, 1997Date of Patent: December 14, 1999Assignee: Valmet CorporationInventors: Pasi Ahonen, Jaakko Kallioniemi, Juha Kaihovirta, Ville Korhonen, Matti Luontama
-
Patent number: 5980977Abstract: The present invention concerns a process to produce a high surface area niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate for use as an electrical energy storage component in a capacitor or a battery configuration.Type: GrantFiled: December 9, 1996Date of Patent: November 9, 1999Assignee: Pinnacle Research Institute, Inc.Inventors: Charles Z. Deng, Keh Chi Tsai, Dania Ghantous
-
Patent number: 5976624Abstract: The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.Type: GrantFiled: August 20, 1996Date of Patent: November 2, 1999Assignee: Sony CorporationInventors: Takaaki Ami, Katsuyuki Hironaka, Yuji Ikeda
-
Patent number: 5968597Abstract: A process for the production of a fabric/elastomer composite is provided. The inventive process involves the impregnation through a printing procedure of an inventive elastomer composition comprising (i) a water-borne polyurethane latex, (ii) an acid-generating chemical, (iii) a cloud point surfactant, (iv) a thickener, and (v) optionally, a cross-linking agent, within a textile fabric. Subsequently, the impregnated fabric is then heated, preferably with steam, in order to generate an acid, which, in turn, permits the surfactant to gel and uniformly coagulate the latex over the fabric surface. The fabric is preferably a circular knit comprised of polyester and/or lycra fibers. The composite may be utilized within any fabric application requiring a support function, particularly as joint braces, sports brassieres, support apparel, and the like. The inventive elastomer composition is also provided.Type: GrantFiled: April 15, 1998Date of Patent: October 19, 1999Assignee: Milliken & CompanyInventors: Kirkland W. Vogt, Shulong Li
-
Patent number: 5952045Abstract: Disclosed is a spin coating apparatus and method for coating a semiconductor wafer of known diameter with a thin and substantially uniform coating of a solution. The apparatus comprises a containment bowl with a rotatable vacuum chuck, having a diameter less than hat of the wafer, rotatably mounted inside the bowl. The vacuum chuck captively holds a bottom surface of the wafer. Directly beneath the bottom surface of the wafer is a substantially frustroconical deflector ring. The deflector ring is concentrically attached about and stationary with respect to the rotatable vacuum chuck. The top surface of the ring is located just below and in close-spaced parallel relation to the bottom surface of the wafer. The top face of the deflector has a minimum diameter that is greater that the diameter of the semiconductor wafer. With the system of this invention the requirement of an organic solvent wash of the wafer backside after the coating of the wafer top surface is eliminated.Type: GrantFiled: October 17, 1997Date of Patent: September 14, 1999Assignee: Micron Technology, Inc.Inventor: Tim Bossart
-
Patent number: 5948476Abstract: A method for forming a molecular film includes the steps of: coating a surface of a substrate having active hydrogen atoms on its surface with a coating solution containing a silane-based compound having at least one reactive group selected from the group consisting of a chloro group, an alkoxy group and an isocyanate group; and effecting an elimination reaction between the active hydrogen atoms on the surface of the substrate and reactive groups of the silane-based compound, thereby covalently bonding the silane-based compounds to the surface of the substrate. The substrate is supplied to a chamber in which an atmosphere is maintained at a low water vapor density. The surface of the substrate is coated with a coating solution containing the silane-based compound and a solvent by using a transfer element. A dehydrochlorination reaction is effected between the active hydrogen atoms and the chloro groups of the silane-based compounds.Type: GrantFiled: November 4, 1997Date of Patent: September 7, 1999Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Tadashi Otake, Norihisa Mino, Tohru Nakagawa, Mamoru Soga, Kazufumi Ogawa, Takaiki Nomura, Yasuo Takebe
-
Patent number: 5925403Abstract: An undercoat containing copper and bismuth and/or vanadium is formed on a ceramic substrate such as Al.sub.2 O.sub.3. When the undercoat contains copper and bismuth, the ceramic substrate having the undercoat is heated at a temperature between 600.degree. C. and 1100.degree. C. in an oxidative atmosphere to obtain a fired undercoat on the ceramic substrate. The fired undercoat is formed with copper oxide particles and a binder phase containing bismuth and copper for bonding between adjacent copper oxide particles. A bismuth content in the fired undercoat is determined within a range of 10 to 90 wt %. When the undercoat contains copper and vanadium, the ceramic substrate having the undercoat is heated at a temperature between 450.degree. C. and 1100.degree. C. in the oxidative atmosphere to obtain a fired undercoat which is formed with copper oxide particles and a binder phase containing vanadium and copper. A vanadium content in the fired undercoat is determined within a range of 3 to 63 wt %.Type: GrantFiled: March 4, 1997Date of Patent: July 20, 1999Assignee: Matsushita Electric Works, Ltd.Inventors: Izuru Yoshizawa, Hiroaki Takahashi, Tomoyuki Kawahara
-
Patent number: 5922411Abstract: Disclosed are a composition for forming a ceramic material useful for smoothly forming a ceramic film at a low temperature on surfaces of solid products such as substrates used in electronic products, plastic films or the like and a process for producing such a ceramic material. The afore-mentioned composition comprises a silazane-based polymer, and at least one ceramic-transformation promoting agent selected from the group consisting of an amine compound, an acid compound and peroxide. Further, the afore-mentioned ceramic material can be produced by bringing a mixture of the silazane-based polymer and the ceramic-transformation promoting agent into contact with steam.Type: GrantFiled: March 7, 1997Date of Patent: July 13, 1999Assignee: Tonen CorporationInventors: Yasuo Shimizu, Hideki Matsuo, Kazuhiro Yamada
-
Patent number: 5912047Abstract: A borosilicate containing coating is formed on an electronic substrate by applying a borosilazane polymer on the substrate and converting it to borosilicate by heating in an oxidizing environment. The resultant thick planarizing coatings are useful as protective coatings and dielectric inner layers.Type: GrantFiled: March 25, 1993Date of Patent: June 15, 1999Assignee: Dow Corning CorporationInventors: Grish Chandra, Loren Andrew Haluska, Gregg Alan Zank
-
Patent number: 5912048Abstract: Porous carbonaceous adsorptive membranes are protected or passivated from surface degradation in moist air by oxidizing the surface at relatively mild conditions after initial preparation of the membrane by pyrolysis. Carbon dioxide is a preferred passivating gas. Contact of passivated membranes with moist air at ambient conditions unexpectedly improves membrane effectiveness in separating gas mixtures containing hydrogen and light hydrocarbons.Type: GrantFiled: August 25, 1997Date of Patent: June 15, 1999Assignee: Air Products and Chemicals, Inc.Inventors: Madhukar Bhaskara Rao, Madhu Anand
-
Patent number: 5910336Abstract: An improved process for producing a light-absorbing chalcopyrite film is disclosed, which comprises the steps of: applying at least one solution containing at least either of (a) an organic compound of a metal in Group 1B of the periodic table and (b) an organic compound of a metal in Group 3B of the periodic table on a substrate at least once to thereby form a thin film containing the organic compound (a) and the organic compound (b); heating the thin film in a reducing or inert gas atmosphere to convert the thin film into a thin metal film comprising the Group 1B metal and the Group 3B metal; and heating the thin metal film in an atmosphere containing either an element in Group 6B of the periodic table or a compound thereof to thereby convert the thin metal film into a thin chalcopyrite film.Type: GrantFiled: March 31, 1998Date of Patent: June 8, 1999Assignee: Yazaki CorporationInventors: Hiroki Ishihara, Shinichi Nakagawa, Norio Mochizuki, Masaharu Ishida
-
Patent number: 5902640Abstract: A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.Type: GrantFiled: July 19, 1996Date of Patent: May 11, 1999Assignee: The University of ChicagoInventors: Alan R. Krauss, Dieter M. Gruen
-
Patent number: 5900317Abstract: The present invention provides a method of modifying the surface of a polymeric substrate, e.g., to improve the wettability of the polymer film surface and/or affix silicon-containing structures to the substrate surface, comprising exposing the substrate to a flame. The flame is supported by a fuel and oxidizer mixture that includes at least one silicon-containing compound that functions as a fuel and is in an effective amount for modifying the surface of the polymeric substrate. Also disclosed are substrates with surfaces that are modified by exposing the substrate to a flame that is supported by the process of the invention. Large increases in the ASTM wetting test, e.g., greater than 13 mJ/m.sup.2 over that reported with conventional flame-treating processes, have been observed in polymeric substrates treated according to this invention.Type: GrantFiled: September 13, 1996Date of Patent: May 4, 1999Assignee: Minnesota Mining & Manufacturing CompanyInventors: Mark A. Strobel, Ronald S. Kapaun, Christopher S. Lyons, Seth M. Kirk
-
Patent number: 5893950Abstract: A method and apparatus that prevents premature drying of a layer of a water-based coating composition on a substrate are disclosed.Type: GrantFiled: July 31, 1997Date of Patent: April 13, 1999Assignee: The Dexter CorporationInventors: Raffaele Martinoni, Paul Bohler, Christian Schmid
-
Patent number: 5891507Abstract: A metallic stent is coated with a synthetic or biological active or inactive agent that only adheres to the metallic surface of the stent and does not cover slots formed in the stent. In the method, a metallic stent is manufactured in a known manner and is then cleaned to remove surface contaminants and carbon deposits formed from cutting operations and electro-polishing procedures. The stent is then dried in a chamber in which nitrogen gas is purged and then placed in a bath containing a suitable surfactant, such as a long chain alkyl quaternary salt, that removes any residual carbon on the surface of the stent. The stent is then placed in a container filled with the coating agent and the container is placed in an ultrasonic bath. When the bath is activated, the stent swirls in the agent, which agent coats the stent but does not cover the slots of the stent. The stent is removed from the container and dried in a controlled atmosphere.Type: GrantFiled: July 28, 1997Date of Patent: April 6, 1999Assignee: Iowa-India Investments Company LimitedInventor: Swaminathan Jayaraman
-
Patent number: 5885654Abstract: Proposed is a coating solution for the formation of an interlayer insulating film of silicon dioxide in the manufacture of various kinds of electronic devices having excellent storage stability and coating workability. The principal ingredient of the coating solution, of which the solvent is preferably a dialkyl ether, is a polysilazane compound modified with a trimethylsilylating agent such as hexamethyl disilazane to such an extent that, in the .sup.1 H-NMR spectrometric diagram, the ratio of the area of the peak assignable to SiH.sub.3 to the total area of the peaks assignable to SiH.sub.1 and SiH.sub.2 is in the range from 0.15 to 0.45. An interlayer insulating film can be formed by coating a substrate with the coating solution, drying the coating layer and baking the dried coating layer at 300.degree. to 800.degree. C. in a moisturized atmosphere.Type: GrantFiled: August 12, 1997Date of Patent: March 23, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshio Hagiwara, Tatsuhiko Shibuya
-
Patent number: 5885657Abstract: A process is disclosed for producing ceramic layers. A dispersion of a strongly acid hydrolysed metal composed and of a metal oxide powder is hardened at low temperatures into a mechanically stable ceramic layer. 29 g of titanium tetraisopropylate are hydrolysed in 14 g water, peptised in 42 g hydrochloric acid (25%) and mixed with 15 g nanocrystalline titanium dioxide. A 10 .mu.m thick ceramic layer produced with this paste is hardened within 5 minutes in a hot air flow at 100.degree. C. This ceramic layer adheres to glass, ceramic materials, metals, and is solvent and water-resistant.Type: GrantFiled: December 3, 1996Date of Patent: March 23, 1999Assignee: Creavis Gesellschaft fur Technologie und Innovation mbHInventor: Bernd Penth
-
Patent number: 5879743Abstract: A wear-resistant hardfacing and a method for applying such a hardfacing is taught herein. A finely powdered, wear-resistant alloy and a polyvinyl alcohol (PVA) solution slurry is coated onto the metal surface of a tool, implement, or similar item to be hardfaced. Alternatively, a binding coating of PVA solution may be applied to the metal surface followed by application of a layer of a powdered alloy. After the slurry or PVA binding coating has dried, leaving a dry coat of alloy in a PVA matrix, the metal surface is heated to the fusion temperature of the alloy in vacuum, in an inert gas atmosphere, or in hydrogen atmosphere. The metal item with the fused coating is heat treated to impart desired mechanical properties to the part substrate material. The method of the present invention gives a smooth, dense coating of the wear-resistant hardfacing without nonmetallic inclusions.Type: GrantFiled: October 21, 1997Date of Patent: March 9, 1999Assignee: Deere & CompanyInventor: Gopal S. Revankar
-
Patent number: 5876795Abstract: A process for producing a low-stress electrolessly deposited layer of nickel yielding a clean nickel film and having a wettable surface is described. Diffusion is performed in a non-oxidizing environment, using a gas mixture containing nitrogen. The diffusion temperature is optimally set at a temperature of at least 500.degree. C., i.e., at least 150.degree. C. below typical prior art diffusion temperatures. The presence of nitrogen during diffusion changes the direction of the outgoing born away from the surface of the film, and eliminates the requirement that the nickel film be plated on refractory metal that contains glass, which was previously required to provide a media for the boron to diffuse into it for its subsequent removal.Type: GrantFiled: May 21, 1997Date of Patent: March 2, 1999Assignee: International Business Machines CorporationInventors: Charles Curtis Goldsmith, Thomas Lester Nunes
-
Patent number: 5875547Abstract: This invention relates to a method for preventing transport of fluids--such as water and/or gas--through a joint between at least two insulated cable conductors (1,2;21,22,23). The method includes provision of a jointing ferrule (3) for insertion of the conductor ends into the ferrule and making required electrical contacts, --and provision of a molded sheath (8) of insulation material over the joint in sealed contact with the conductor insulation. The ferrule is precovered with a coating containing EEA copolymer to obtain improved adhesion between the ferrule and the insulation sheath. The mold material must be compatible with--and preferably of the same material--as the conductor insulation.Type: GrantFiled: September 19, 1997Date of Patent: March 2, 1999Assignee: AlcatelInventors: Bj.o slashed.rn Larsson, Liv Molvik Lundegaard
-
Patent number: 5871815Abstract: An antistatic film comprising a chemically adsorbed film of straight chain molecules each containing a conductive group and provided on a chargeable substrate via covalent bonds each containing a Si group, said chemically adsorbed film having a conductivity of 10.sup.-10 S/cm or above. With the antistatic chemically adsorbed film according to the invention, conductive functional groups are secured via chemically adsorbed molecules and by siloxane bonds to the surface of a substrate material such as ceramics, glass, synthetic resins or synthetic fibers, a film, a plate, an display screen surface, a light-emitting tube. Thus, the film provides an antistatic effect and does not separate. In addition, this chemically adsorbed film has a thickness at the nanometer level and is thus excellently transparent, as well as capable of preventing contamination of the substrate surface due to charging thereof. The film is also excellently durable.Type: GrantFiled: July 14, 1997Date of Patent: February 16, 1999Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazufumi Ogawa, Norihisa Mino, Mamoru Soga
-
Patent number: 5871806Abstract: A process for heat-treating an object in a heat-treating apparatus comprises carburizing the object under a carburizing gas atmosphere in a carburizing zone, cooling the object with a cooling gas, and nitriding the object under a nitriding gas atmosphere in a nitriding zone.Type: GrantFiled: December 11, 1996Date of Patent: February 16, 1999Assignee: Mazda Motor CorporationInventors: Hideo Shoga, Yoshikazu Nagai, Masayuki Suzawa, Hiroshi Nagahama, Ko Yamaoka, Teiji Ogawa, Yoshitugu Kamiya
-
Patent number: 5867234Abstract: In a manufacturing method of a MIM nonlinear device (50) having a Ta electrode layer (16), an anodic oxidation film (18) and a Cr electrode layer (20), tantalum oxidation film (14) is first formed on the transparent substrate (12). The Ta electrode layer (16) is formed on the tantalum oxidation film (14) and the anodic oxidation film (18) is formed on the Ta electrode layer (16). Then, heat treatment is performed to the substrate. The final temperature drop in the heat treatment process is carried out in the atmosphere that contains water vapor. After that, the Cr electrode layer (20) is formed to complete the MIM nonlinear device (50). By conducting the heat treatment in the atmosphere that contains water vapor, the nonlinear characteristics of the MIM device can be improved as well as the improvement of the resistance characteristic in the OFF state.Type: GrantFiled: November 29, 1996Date of Patent: February 2, 1999Assignee: Seiko Epson CorporationInventors: Yasushi Takano, Takumi Seki, Yasuhiro Yoshimizu, Takashi Inoue
-
Patent number: 5863603Abstract: The present invention teaches electroless liquid vapor deposition/etching process for depositing on a reactive or non-reactive substrate surface or etching a film on a substrate surface in a bathless deposition apparatus during ULSI processing by the steps of: applying liquid chemical precursor solutions to the surface of the substrate, the liquid chemical precursor solutions are reactive to one another and enter the chamber of the inert atmosphere deposition apparatus separately; spinning the substrate during the application of the liquid chemical precursor solutions; and depositing or etching the film. The process may be implemented in inert atmosphere by enclosing the whole arrangement in a chamber and flowing inert gases such as Ar, He, and N.sub.2, etc.Type: GrantFiled: June 19, 1997Date of Patent: January 26, 1999Assignee: Micron Technology, Inc.Inventors: Gurtej S. Sandhu, Trung T. Doan
-
Patent number: 5853808Abstract: Silsesquioxane polymers that are useful for preparing SiO.sub.2 -rich ceramic coatings are obtained as the polymeric reaction products from the hydrolysis and condensation of organosilanes having a .beta.-substituted alkyl group. A preferred silsesquioxane polymer is the polymeric reaction product obtained from .beta.-chloroethyltrichlorosilane. Coating compositions containing such silsesquioxane polymers dissolved in organic solvent may be applied to a substrate and converted to SiO.sub.2 -rich ceramic thin layers by evaporating the solvent and heating the coated substrate at moderate temperatures.Type: GrantFiled: September 3, 1997Date of Patent: December 29, 1998Assignees: Gelest Inc., University of PennsylvaniaInventors: Barry C. Arkles, Donald H. Berry, Lisa Kiernan Figge
-
Patent number: 5843526Abstract: The present invention is directed to compositions derived from polymers containing metal-nitrogen bonds, which compositions exhibit, among other things, desirable oxidation resistance, corrosion resistance and hydrolytic stability when exposed to adverse environments, whether at ambient or at elevated temperatures, and which may be useful as, for example, protective coatings on surfaces.Type: GrantFiled: October 29, 1997Date of Patent: December 1, 1998Assignee: Lanxide Technology Company, LPInventors: Alexander Lukacs III, James Allen Jensen, Kurt Joseph Becker
-
Patent number: 5840371Abstract: A coating of a vinylidene fluoride polymer on a metal foil is heated at about 350.degree. C. to 450.degree. C. in a non-oxidizing atmosphere of inert gas to provide a rechargeable battery current collector having an exceptional bonding surface which maintains a long-lasting and highly-conductive laminate interface with an associated polymeric battery electrode composition.Type: GrantFiled: July 2, 1997Date of Patent: November 24, 1998Assignee: Bell Communications Research, Inc.Inventor: Paul C. Warren
-
Patent number: 5834114Abstract: Fiber material for adsorbing contaminants is prepared according to the steps of preparing coating a glass or mineral fiber substrate with a resin, cross-linking the resin, heating the coated fiber substrate and resin to carbonize the resin, and exposing the coated fiber substrate to an etchant to activate the coated fiber substrate.Type: GrantFiled: May 31, 1995Date of Patent: November 10, 1998Assignee: The Board of Trustees of the University of IllinoisInventors: James Economy, Michael Daley
-
Patent number: 5830535Abstract: A process is for producing a ski edge for incorporation into a ski consisting of rolled and heat-treated material, at least part of the surface of which is coated with a bonding agent. In order to reduce the labour and expense and environmental pollution in the production of ski edges and improve the reliability of the bond between the edges and body of the ski, the ski edge strip material is coated with the bonding agent (primer) at least in the region of the bonding surfaces in a continuous process following the heat treatment. Thus, the ski edge strip material is kept under reducing conditions directly before coating in such a way that the surface of the strip material is free of oxide before coating.Type: GrantFiled: January 10, 1997Date of Patent: November 3, 1998Assignee: C. D. Walzholz Produktions-Gesellschaft mbHInventors: Hans-Toni Junius, Heinz Hofinghoff
-
Patent number: 5827802Abstract: Method of vacuum depositing a monomolecular layer on a surface, the monomolecular layer comprising at least one element selected from groups IIa, IIIa, IVa, VIIIa, Ib, IIb, IIIb, Vb of the periodic table. The method consists in heating said surface to a predetermined temperature (T) of less than 600.degree. C. and vacuum evaporating at least the above-mentioned element for the purpose of depositing it on the receptor surface, the total atomic flow of the element(s) onto the receptor surface being from 10.sup.12 to 10.sup.15 atoms/cm.sup.2 s. According to the invention, the formation of the monomolecular layer is monitored in real time, and evaporation of the element is stopped when the complete formation of the monomolecular layer is detected.Type: GrantFiled: July 8, 1996Date of Patent: October 27, 1998Assignee: UfinnovaInventor: Michel Lagues
-
Patent number: 5814525Abstract: A piezoelectric biosensor substrate useful for immobilizing biomolecules in an oriented manner on the surface of a piezoelectric sensor has a ladder polymer of polyacrylonitrile. To make the substrate, a solution of an organic polymer, preferably polyacrylonitrile, is applied to the surface of a piezoelectric sensor. The organic polymer is modifying by heating the polymer in a controlled fashion in air such that a ladder polymer is produced which, in turn, forms the attachment point for the biomolecules comprising the piezoelectric biosensor.Type: GrantFiled: January 25, 1996Date of Patent: September 29, 1998Assignee: Sandia CorporationInventors: Clifford L. Renschler, Christine A. White, Robert M. Carter
-
Patent number: 5804252Abstract: A durable and extremely water- and oil repellent ultra thin film is formed on the surface of a substates such as glass, ceramics, fabrics, fur and cloth by a dehydrochlorination reaction between a functional group such as a hydroxyl group or an imino group on the surface of the substrate. The coating film of the material comprises a plurality of chlorosilyl groups was formed on the surface of the substrate by dipping and holding the substrate comprising functional groups on its surface in a solution prepared by dissolving a material comprising fluorocarbon groups and a plurality of chlorosilyl groups in a non-aqueous solvent and drying the substrate which is then taken out from the solution in a substantially moistureless or low moisture atomosphere and removing the non-aqueous solvent remaining on the substrate. Further, when the coating film is left in an atomosphere comprising moisture, i.e.Type: GrantFiled: April 1, 1996Date of Patent: September 8, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazufumi Ogawa, Mamoru Soga
-
Patent number: 5800860Abstract: A novel planar waveguide structure has been constructed by sintering substantially pure SiO.sub.2 layers in a He.sub.2 /BCl.sub.3 atmosphere. This results in the generation of a liquid phase of substantially lower viscosity than that of the deposited silica by itself. Since viscous sintering is enhanced by the presence of this liquid, consolidation occurs at lower temperature, e.g. 1000.degree.-1100.degree. C., than those used in the prior art, e.g. 1350.degree.-1500.degree. C. Much of the B.sub.2 O.sub.3 remains unreacted with the silica particles it helps to sinter, acting like a flux to bring about consolidation. This remaining B.sub.2 O.sub.3 is removed at the conclusion of the consolidation procedure by steam treatment at temperatures of 900.degree.-1100.degree. C. Some boron is incorporated into the silica layer, changing its CTE without substantially increasing its index.Type: GrantFiled: June 28, 1995Date of Patent: September 1, 1998Assignee: Lucent Technologies Inc.Inventors: Arnd Hermann Kilian, Hyung Jong Lee, John Burnette MacChesney
-
Patent number: 5792510Abstract: A method for forming a chemically-ordered ferromagnetic or antiferromagnetic metal alloy film allows the temperature and/or time required for annealing to be reduced. The ferromagnetic or antiferromagnetic metal alloy film is dosed with hydrogen either during or subsequent to deposition of the film on a substrate. The metal alloy film is then heated to desorb the hydrogen atoms from the metal alloy. In one embodiment for dosing the metal alloy film with hydrogen a transition metal of the type that catalyzes the dissociative chemisorption of H.sub.2, such as palladium (Pd), is deposited as a film in contact with the metal alloy film. The Pd film is then heated and while at an elevated temperature, it is exposed to H.sub.2 gas. The H.sub.2 becomes dissociated into hydrogen atoms and the hydrogen atoms become chemically absorbed by the Pd film. During subsequent cooling of the Pd film hydrogen atoms in the Pd film become absorbed into the metal alloy film.Type: GrantFiled: June 10, 1997Date of Patent: August 11, 1998Assignee: International Business Machines CorporationInventors: Robin Frederick Charles Farrow, Ronald Franklin Marks
-
Patent number: 5783255Abstract: A high quality shaped article of silicon carbide is efficiently produced by using a carbon substrate suitable for the production of a silicon carbide film without generating cracking or breakage. In a method of producing a shaped article of silicon carbide while using a carbonaceous material as a deposition substrate by decomposing halogenated organic silicone compound by a reduction pyrolysis at a high temperature, forming a silicon carbide film layer on a surface of the substrate by CVD and removing the carbon substrate, the carbon substrate is formed of a composite of graphite and amorphous carbon obtained by shaping and firing a mixture of a powdery graphite and an organic substance.Type: GrantFiled: June 27, 1997Date of Patent: July 21, 1998Assignee: Mitsubishi Pencil Co., Ltd.Inventors: Yoshihisa Suda, Yasushi Yamamoto
-
Patent number: 5780099Abstract: A process for manufacturing a continuous dental floss brush comprising alternating portions of thread sections which do not stretch significantly under tension and brush sections which stretch under slight tension, includes the step of coating at least the thread sections of a reverse twisted high tenacity nylon yarn with a solution of polymer in a volatile solvent, the polymer being selected from the group consisting of nylon, polyurethane and mixtures thereof. The thread sections of the yarn are thereafter heated to vaporize solvent therefrom while the yarn is maintained under a tension of from 0.15 to 1N. In the humidifier assembly, having a housing which defines a humidifier zone, the brush sections of the yarn are exposed to a mixture of steam and gas, the steam and gas mixture having a temperature of from 130.degree. C.Type: GrantFiled: July 9, 1996Date of Patent: July 14, 1998Assignee: Gillette Canada, Inc.Inventors: Sean G. Gilligan, Dermot T. Freeman, Larry J. Oliphant, Jeffrey S. Meessmann, Patrick J. Hanley, Gerald S. Szczech
-
Patent number: 5766692Abstract: A process for depositing an oxynitride film on a substrate by liquid phase deposition. A nitrogen radical-containing solution is added to a silicon dioxide supersaturated solution to obtain a deposition solution. Then, a substrate is contacted with the deposition solution to deposit the oxynitride film on the substrate, followed by thermal annealing under nitrogen.Type: GrantFiled: March 17, 1997Date of Patent: June 16, 1998Assignee: National Science CouncilInventors: Ming-Kwei Lee, Chung-Hsing Lin
-
Patent number: 5753305Abstract: This invention pertains generally to aging methods suited to aerogel thin film fabrication, and particularly to techniques for improving gel strength and/or aerogel dielectric constant by a rapid aging technique, which avoid damage or premature drying of wet gel thin films during aging. A substrate having a wet gel thin film deposited thereon is contacted with a saturated water vapor atmosphere, preferably at an elevated pressure and a temperature greater than 100.degree. C. The method may comprise a vapor-phase exchange step to remove low boiling point pore liquids such as ethanol prior to or during aging. The method may also comprise a vapor-phase exchange step to replace water in the wet gel with another pore liquid such as acetone to stop the aging process and prepare the wet gel for drying. A vapor-phase aging catalyst (e.g. ammonia) may also be used to enhance the aging process.Type: GrantFiled: November 14, 1996Date of Patent: May 19, 1998Assignee: Texas Instruments IncorporatedInventors: Douglas M. Smith, Gregory P. Johnston, William C. Ackerman, Shin-Puu Jeng
-
Patent number: 5750403Abstract: On a first insulating film covering a substrate, wiring layer patterns are formed and thereafter, a second insulating film of plasma CVD--SiO.sub.2 or the like is formed thereon. A hydrogen silsesquioxane resin film having a flat surface is spin-coated on the second insulating film. Thereafter, the resin film is subjected to a first heat treatment in an inert gas atmosphere to convert the resin film into a silicon oxide film of a preceramic phase. On this silicon oxide film, a third insulating film of plasma CVD--SiO.sub.2 or the like is formed. Thereafter, a second heat treatment is performed to convert the silicon oxide film of preceramic phase into a silicon oxide film of a ceramic phase, while preventing fine size projections from being formed on the surface of the silicon oxide film. Thereafter, a second wiring layer is formed on the third insulating film. It is possible to planarize an interlevel insulating film and improve a process yield.Type: GrantFiled: July 12, 1996Date of Patent: May 12, 1998Assignee: Yamaha CorporationInventors: Yushi Inoue, Takahisa Yamaha