Abstract: An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a pocket or cavity into which the solid dopant material is disposed. When the solid dopant material melts, it remains contained within the pocket, thus not damaging or degrading the arc chamber. Additionally, the target holder can be moved from one or more positions where the pocket is at least partially in the arc chamber to one or more positions where the pocket is entirely outside the arc chamber. In certain embodiments, a sleeve may be used to cover at least a portion of the open top of the pocket.

Abstract: Provided are methods of depositing silicon-containing films utilizing certain precursors at temperatures of 400° C. or higher. Certain methods comprise exposing a substrate surface to a silicon precursor and another precursor to achieve various films. Examples of silicon-containing films which can be deposited include SiN, SiC, SiO2, SiCN, etc.

Abstract: The invention relates to a process for depositing an anti-fouling top coat onto the outermost coating layer of a coated optical article, comprising the following steps: a) providing an optical article having two main faces, at least one of which being coated with an outermost layer; b) treating said outermost layer with energetic species resulting in surface physical attack and/or chemical modification; and c) vacuum evaporating a liquid coating material for an anti-fouling top coat by means of an evaporation device, resulting in the deposition of the evaporated coating material onto the treated outermost layer of the optical article, wherein prior to the vacuum evaporation step of the liquid coating material, said liquid coating material has been treated with energetic species.

Abstract: Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon carbide films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon carbide film. The one or more radicals can be formed in a remote plasma source.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: Three dimensional optical structures are described that can have various integrations between optical devices within and between layers of the optical structure. Optical turning elements can provide optical pathways between layers of optical devices. Methods are described that provide for great versatility on contouring optical materials throughout the optical structure. Various new optical devices are enabled by the improved optical processing approaches.

Abstract: A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicon carbide, improving the thermal stability of the carbon aerogel.

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.

Abstract: Particles coming from an evaporation source 9 are deposited on a substrate 21 at a specified film forming position 33 in a vacuum so as to form a thin film on the substrate 21. A rod-shaped material 32 containing a source material of the thin film is melted above the evaporation source 9 and the melted material is supplied to the evaporation source 9 in the form of droplets 14.

Abstract: The invention relates to a device for coating a substrate (14) using CVD, in particular for coating with diamond or silicon, wherein a heat conductor array comprising a plurality of elongated heat conductors (2) is provided in a housing (10), said heat conductors extending between a first (1) and a second electrode (8), wherein the heat conductors (2) are held individually tensioned by a tensioning device attached to one end thereof. For the purposes of improving the life of the heat conductors (2), the invention proposes that the tensioning device comprises a tilt arm (5) having a tensioning weight (G), the heat conductor (2) being attached to the first end (E1) of said tilt arm, and the second end thereof substantially being mounted pivotably about a horizontal axis (H).

Abstract: A pump piston and/or elements sealing the pump piston, in particular a sealing ring of elastomeric material with an additionally applied coating are/is proposed. To improve the durability characteristics, the pump piston and/or the elements sealing the pump piston have a coating which is formed at least predominantly of halogen-, silicon-, carbon-containing and/or metal-organic monomers. Furthermore, a device and a method for coating an object of elastomeric material utilizing a plasma are proposed.

Abstract: Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

Abstract: Particles coming from an evaporation source 9 are deposited on a substrate 21 at a predetermined film forming position 33 in a vacuum so as to form a thin film on the substrate 21. A bulk material 32 containing a source material of the thin film is melted above the evaporation source 9, and the melted material is supplied to the evaporation source 9 in the form of droplets 14. A silicon material 32 including a plurality of pores therein is used as the bulk material 32. Preferably, the pores have a lower average internal pressure than an atmospheric pressure. More preferably, the average internal pressure is 0.1 atm or less.

Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.

Abstract: The present invention relates to inks for silk-screen printing technique, as well as the corresponding printing technique, designed to bestow upon the reproduction obtained by means of the use of said inks on an appropriate substrate, preferably of a paper type, a particular feel, preferably a particular roughness or coarseness. In particular, the present invention relates to an ink for silk-screen printing of catalogues or advertising leaflets for products designed for decorative wall coatings that will reproduce also the feel of the final decoration applied on the wall substrate.

Abstract: A piezo-electric film forming method includes (1) a first moving step of moving a nozzle with respect to a substrate along a first direction to form a first piezo-electric band extending along the first direction, (2) a measuring step of measuring thickness distribution along the width of the first piezo-electric band, (3) a calculating step of calculating a shifting distance based on the thickness distribution, (4) a shifting step of moving the nozzle with respect to the substrate along a second direction by the calculated shifting distance, wherein the second direction intersects with the first direction, and (5) a second moving step of moving the nozzle with respect to the substrate along the first direction to form a second piezo-electric band extending along the first direction. The piezo-electric film is formed such that the first piezo-electric band and the second piezo-electric band are overlapped.

Abstract: Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.

Abstract: Light reactive deposition uses an intense light beam to form particles that are directly coated onto a substrate surface. In preferred embodiments, a coating apparatus comprising a noncircular reactant inlet, optical elements forming a light path, a first substrate, and a motor connected to the apparatus. The reactant inlet defines a reactant stream path. The light path intersects the reactant stream path at a reaction zone with a product stream path continuing from the reaction zone. The substrate intersects the product stream path. Also, operation of the motor moves the first substrate relative to the product stream. Various broad methods are described for using light driven chemical reactions to produce efficiently highly uniform coatings.

Abstract: This invention relates to a highly stable silicon hydride (SiH(1/p)) surface coating formed from high binding energy hydride ions. SiH(1/p) may be synthesized in a cell for the catalysis of atomic hydrogen to form novel hydrogen species and/or compositions of matter containing new forms of hydrogen. The reaction may be maintained by a microwave plasma of a source of atomic hydrogen, a source of catalyst, and a source of silicon.

Abstract: Glass is produced by depositing presintering composition on a preform set into move in front of a plasma torch which moves back and forth substantially parallel to a longitudinal direction of the preform, a first feed duct feeds the plasma with grains of the presintering composition while optionally a second feed duct feeds the plasma with a fluorine or chlorine compound, preferably a fluorine compound, mixed with a carrier gas, whereby the presintering composition consists of granules of metal oxides or metalloid oxides of a pyrogenic silicon dioxide powder with a BET surface area of 30 to 90 m2/g, a DBP index of 80 or less, a mean aggregate area of less than 25000 nm2 and a mean aggregate circumference of less than 1000 nm, wherein at least 70% of the aggregates have a circumference of less than 1300 nm or a high-purity pyrogenically prepared silicon dioxide having metal contents of less than 0.

Abstract: In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

Abstract: A nozzle plate of an inkjet printhead, and a method of manufacturing the nozzle plate. The nozzle plate includes a substrate through which nozzles are formed; an ink-philic coating layer formed on an outer surface of the substrate and inner walls of the nozzles; and an ink-phobic coating layer selectively formed on the ink-philic coating layer disposed around the nozzles.

Abstract: A low refractive index SiO2 film is provided which uses a starting material for forming an SiO2 film and has a lower refractive index than the conventional SiO2 film. A starting material gas comprising a gas containing a fluorine atom, a gas containing a silicon atom and an alkyl group having 1 to 4 carbon atoms or an alkyl group having 1 to 4 carbon atoms with a part or the whole of hydrogen atoms substituted by a fluorine atom, and a gas containing an oxygen atom is subjected to plasma CVD in a vacuum chamber 1 to form an SiO2 film on a web 2 in a plasma zone 5.

Abstract: A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

Abstract: Conducting polymers having improved optical properties, and a method of manufacturing the conducting polymers, are disclosed. The conducting polymers are prepared by a process wherein organic ions and neutral oligomers are deposited simultaneously on a substrate surface to provide a conducting polymer film.

Abstract: This invention relates to antisoiling compositions for antireflective substrates. More particularly, this invention relates to methods for depositing antisoiling compositions onto antireflective substrates. In particular, this invention relates to a method of depositing an antisoiling composition on an antireflective substrate comprising vaporizing an antisoiling composition and depositing the antisoiling composition onto an antireflective substrate. In another aspect, this invention relates to method of preparing an antireflective film stack comprising depositing an antireflective layer onto the surface of a transparent substrate and vapor depositing an antisoiling layer onto the surface of the antireflective layer. In yet another aspect, this invention relates to a method of depositing an antisoiling composition on an antireflective coated ophthalmic lens comprising vaporizing an antisoiling composition and depositing the antisoiling composition onto an antireflective coated ophthalmic lens.

Abstract: Chemical vapor deposition is performed using a plurality of expanding thermal plasma generating means to produce a coating on a substrate, such as a thermoplastic and especially a polycarbonate substrate. The substrate is preferably moved past the generating means. Included are methods which coat both sides of the substrate or which employ multiple sets of generating means, either in a single deposition chamber or in a plurality of chambers for deposition of successive coatings. The substrate surfaces spaced from the axes of the generating means are preferably heated to promote coating uniformity.

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress.

Abstract: Conducting polymers having improved optical properties, and a method of manufacturing the conducting polymers, are disclosed. The conducting polymers are prepared by a process wherein organic ions and neutral oligomers are deposited simultaneously on a substrate surface to provide a conducting polymer film.

Abstract: A method for coating surfaces, for which a precursor material is caused to react with the help of plasma and the reaction product is deposited on a surface, the reaction as well as the deposition taking place at atmospheric pressure, such that a plasma jet is generated by passing a working gas through an excitation zone and the precursor material is supplied with a lance separately from the working gas to the plasma jet.

Abstract: A method of manufacturing an electrode for a secondary battery by depositing a thin film composed of active material on a current collector in which a surface-treated layer such as an antirust-treated layer is formed, including the steps of: removing at least part of the surface-treated layer by etching the surface of the current collector with an ion beam or plasma in order to improve the diffusion of the current collector material into the active material thin film; and depositing the thin film on the surface of the current collector subjected to the etching step.

Abstract: In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

Abstract: This invention relates to methods whereby nanoparticle liquid suspensions are used in conventional thermal spray deposition for the fabrication of high-quality nanostructured coatings. Ultrasound is used for disintegration of the as-synthesized particle agglomerates, nanoparticle dispersion in liquid media, and liquid precursor atomization.

Abstract: A method for retarding the deterioration rate of acidic paper is disclosed. The method includes placing an acidic paper article in a polymer film enclosure having a reservoir of deacidifying agent. The deacidifying agent migrates over time to the paper article in an amount sufficient to retard the deterioration rate of the paper. The method can further include placing in the polymer film enclosure a carrier material having a second reservoir of deacidifying agent. An article for retarding the deterioration rate of acidic paper is also disclosed. The article includes a polymer film enclosure having a reservoir of deacidifying agent. The polymer film enclosure is capable of enclosing an acidic paper article. The deacidifying agent is capable of migrating over time to the acidic paper article enclosed therein in an amount sufficient to retard the deterioration rate of the paper. The article can further include a carrier material having a reservoir of deacidifying agent.

Abstract: A method for making an otical recording medium comprises providing a substrate which is encoded with information in the form of pits and/or a continuous groove beforehand at least on one side thereof, spraying a solution or dispersion of a film-forming material containing at least one organic compound having optical functionality in the form of a mist onto the encoded side of the substrate in a vacuum chamber under conditions sufficient to permit a thin film to be formed thereon in a substantially solvent-free condition, and drying the thin film. An optical recording medium obtained by the method is also described.

Abstract: A low refractive index SiO2 film is provided which uses a starting material for forming an SiO2 film and has a lower refractive index than the conventional SiO2 film.

Abstract: This invention relates to methods whereby nanoparticle precursor solutions are used in conventional thermal spray deposition for the fabrication of high-quality nanostructured coatings. The method allows combining nanoparticle synthesis, melting, and quenching into a single operation.

Abstract: This invention combines the precision spray process with in-flight laser treatment in order to produce direct write electronic components. In addition to these components, the process can lay down lines of conductive, inductive, and resistive materials. This development has the potential to change the approach to electronics packaging. This process is revolutionary in that components can be directly produced on small structures, thus removing the need for printed circuit boards.

Abstract: An inorganic antimicrobial composition has the formula AB2O4, wherein A and B are low temperature far infrared irradiating metals, A is Mg, Zn, Mn, Ni, Co, or Fe(II), B is Al, Cr(III), Mn(III) or Fe(III), and O is oxygen. An antimicrobial article is made by coating said composition on a porous honeycomb-shaped substrate. An organic antimicrobial article is made from a quarternary ammonium salt coated on a porous honeycomb-shaped substrate. Processes of making the antimicrobial articles are provided.

Abstract: A non-chrome process for the pretreatment of substrate surfaces to simultaneously clean them and improve their bonding strength for organic coatings such as adhesives, protective primers, sealants, paints, composites and similar materials conventionally bonded to such substrates, including non-chromated or chromated curable organic resin protective coatings applied directly to bare aluminum substrates. The invention involves the use of novel wipe solvent compositions containing a major volume of an environmentally-safe volatile organic solvent which has a low composite vapor pressure or is otherwise exempt from federal, state or local regulations, and a minor volume of a polyfunctional coupling agent, preferably of the silane type.

Abstract: A method of forming a polycrystalline silicon thin layer, which comprises the steps of forming a silicon thin film on a surface of a heat resistant substrate by making use of polycrystalline silicon fine particles as a raw material, and heating the silicon thin film thereby to recrystallize the silicon thin film and hence to enlarge an average particle diameter of the polycrystalline silicon fine particles. The silicon thin film is formed by depositing the polycrystalline silicon fine particles directly on the surface of the substrate, and meets a relationship represented by the following formula (1)W.sub.A /(V.sub.S .multidot.d.sub.S).gtoreq.0.95 (1)wherein W.sub.A is the weight of the polycrystalline silicon fine particles which is actually deposited on the surface of the substrate, V.sub.S is a volume of the silicon thin film which is deposited on the surface of the substrate, and d.sub.S is a density of silicon (Si).

Abstract: An Si--O--F insulating film having a low dielectric constant is deposited on a substrate by thermally reacting disassociated SiF.sub.4 radicals and ozone or oxygen gas in a vacuum chamber. The SiF.sub.4 radicals are formed remotely from the chamber and interact thermally with the ozone or oxygen without requiring plasma enhancement. The deposited Si--O--F film has good gap-filling properties and is suitable for forming IMD layers over high aspect ratio 0.25 micron geometries.

Abstract: Apparatus and methods for treatment of materials by producing gaseous product material in the form of high purity molecules including metal oxides, metal carbides, etc., using catalytic and non-catalytic processes, and stoichiometrically depositing the gaseous product material on articles, substrates or base materials in the fields of semi-conductors, superconductors, thin optical films, wear and corrosion and the like. The deposition of high purity gas phase material produced by the disclosed methods are useful in forming common refractory layers, films, and bodies such as ferroelectric, superconducting and semiconductor materials, to name a few. Catalytic reaction for the formation and desorption of the molecules, etc., may be monitored by the use of work function measurements. Such measurements also provide a basis for detecting the presence of impurities, gasification of the surface catalyst, and conditions which favor maximum gas phase molecular formation.

Abstract: The methods for ceramic coatings synthesized by chemical reactions energized by laser plasmas were invented. Laser plasmas were generated by pulsed laser beams focused by a reflector having a hole. The ions and electrons were formed by the laser plasmas from gaseous molecules or solid materials. The first method applied an electric or a magnetic field to separate ions from electrons and to promote ion-atom and ion-molecule reactions. The product molecular ions were focused and deflected to coat patterned coatings with extremely high precision. The second method allowed the electron-ion recombinations to form product molecules or radicals to form high uniform coatings. These two methods and their combinations provides consistent, or continuous modulations, or discrete layers in vast varieties of chemical compositions and crystal structures. Ceramic films were separated by dissolving the substrates.

Abstract: Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.

Abstract: This invention discloses a decorative sheet having a hammer tone texture and the method used to obtain such hammer tone texture. A hammer tone composition is agitated, applied to a decorative sheet using a controlled means of delivery in a sufficient thickness, and then dried at a sufficient temperature and for a sufficient time to provide the hammer tone texture on the decorative sheet.

Abstract: The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

Abstract: In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.

Abstract: A silicon oxide film is deposited on a substrate by chemical vapor deposition (CVD) using an organosilicon compound such as tetraethylorthosilicate (TEOS) and ozone as the principal reactants. The organosilicon compound gas and an ozone-oxygen gas which is relatively low in ozone concentration such as 0.1-1% are mixed in a gas mixer outside the CVD reaction chamber, and the resultant gas mixture is fed into the reaction chamber. Separately, another ozone-oxygen gas which is relatively high in ozone concentration such as 1-10% is introduced directly into the reaction chamber so as to come into contact with and mix with the aforementioned gas mixture in the vicinity of the substrate surface. The obtained silicon oxide film is good in film properties and step coverage, and the CVD operation does not suffer from deposition of reaction products in the gas feeding pipes and gas injecting nozzles.