Abstract: A sealing structure of a gas supply line assembly connected to a processing chamber for processing a substrate in a vacuum atmosphere is provided. The sealing structure includes a first pipe member constituting the gas supply line assembly and having an end surface where an opening communicating with the processing chamber is formed, a second pipe member constituting the gas supply line assembly and having a facing surface facing the end surface of the first pipe member, and a sealing member made of an elastomer disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround the opening. The sealing structure further includes a sheet-shaped porous member disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround a vicinity of the sealing member.

Abstract: A method, a system, and a controller for imprinting. Apply droplets of a formable material to imprint region of substrate. A partial pressure of formable material develops at a fluid-gas interface. A portion of an imprinting surface of a mesa on a template at an initial contact time is brought into contact with the droplets. The droplets merge and flow towards an imprint edge interface. A first gas flows in the imprint region prior to the initial contact time. A second gas flows into the imprint edge interface and region between the template and the substrate after the initial contact time. The template and the flow of the second gas reduces the partial pressure of the formable material below a vapor pressure of the formable material in a portion of the gap region adjacent to the fluid-gas interface at the imprint edge interface.

Abstract: A table for a lithographic apparatus, the table having an encoder plate located on the table, a gap between the encoder plate and a top surface of the table, the gap located radially inward of the encoder plate relative to the periphery of the table, and a fluid extraction system with an opening in the surface of the gap to extract liquid from the gap.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: A method of photopatterning rewritable reactive groups onto surfaces using typically a plasmachemical deposition of functionalized materials, followed by molecular printing of inks. Subsequent treatment of the reactive groups allows for surface rewriting and also the method allows for the creation of either positive or negative image multifunctional rewritable patterned surfaces.

Abstract: A process of preparing a lamella from a substrate includes manufacturing a protection strip on an edge portion of the lamella to be prepared from the substrate, and preparing the lamella, wherein the manufacturing the protection strip includes a first phase of activating a surface area portion of the substrate, and a second phase of electron beam assisted deposition of the protective strip on the activated surface area portion from the gas phase.

Abstract: Three dimensional optical structures are described that can have various integrations between optical devices within and between layers of the optical structure. Optical turning elements can provide optical pathways between layers of optical devices. Methods are described that provide for great versatility on contouring optical materials throughout the optical structure. Various new optical devices are enabled by the improved optical processing approaches.

Abstract: Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” refers to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.

Abstract: The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in ?1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

Abstract: In various exemplary embodiments, the present invention provides a system for the light-induced directed self-assembly (LIDSA) of periodic sub-wavelength nanostructures, including: a light source for delivering a beam of photons; a reaction chamber disposed adjacent to the light source; a gas including one or more precursor materials disposed within the reaction chamber; and a substrate disposed within the reaction chamber, wherein the substrate is positioned and configured to receive the beam of photons; wherein the beam of photons causes a periodic sub-wavelength nanostructure of one or more constituents of the one or more precursor materials to form on a surface of the substrate. In various exemplary embodiments, the present invention also provides an associated method.

Abstract: A method for repairing process-related damage of a dielectric film formed on a substrate caused by processing the dielectric film includes: irradiating the damaged dielectric film with UV light in an atmosphere of hydrocarbon-containing gas to restore the surface of the dielectric film; and irradiating the surface-restored dielectric film with UV light in an atmosphere of oxygen gas to partially remove the hydrocarbon film.

Abstract: A method of forming a metal-containing film by atomic layer deposition is provided herein. The method comprises using (a) at least one metal fluorinated ?-diketonate precursor; and (b) a co-reagent comprising at least one optionally-substituted hydrazine.

Abstract: A coating composition containing a coating base resin and a C4-C10 alcohol as a main solvent, and a method for forming a fine contact of a semiconductor device including the steps of preparing the coating composition, forming a photoresist film on a semiconductor substrate having an underlying layer, performing exposure with a contact mask and developing processes to form a photoresist pattern for contact on the photoresist film, and coating the coating composition on the photoresist pattern to form a coating film.

Abstract: Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

Abstract: Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.

Abstract: A passive reflective tracking media includes a plurality of multi-layer particles including at least one layer of a high refractive index material and at least one layer of a low refractive index material. The particles are configured to reflect ambient electromagnetic radiation at one or more signature wavelengths. Methods of applying the tracking media to a target object, detecting the tracking media, and fabrication the tracking media are also described.

Abstract: A miniaturized spring element is intended to be particularly suitable for use as a beam probe or cantilever for detecting atomic or molecular forces, in particular in an atomic force microscope, and, to this end, is intended to make it possible to detect its deflection in a particularly reliable manner and with high resolution. For this purpose, the spring element contains a basic body which is formed from a matrix containing embedded nanoparticles or defects. The spring element is produced using the principle of local deposition with focused energetic particles or electromagnetic waves or by pyrolytically induced deposition.

Abstract: Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of opposing electrodes for deposition of reactants onto the substrate that is used to form the device or the complete device itself. The processes significantly reduce tact time relative to one at a time batch processing that is currently used for manufacturing optoelectronic devices.

Abstract: The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in ?1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

Abstract: A method and system for modifying a drug delivery polymeric substrate for an implantable device, such as a stent, is disclosed.

Abstract: The invention relates to a method for the synthesis of product molecules, wherein ultrashort laser pulses shaped with the aid of a pulse shaper are generated and a gas which contains educt molecules is fed onto a surface, on which the educt molecules are at least partially adsorbed, the shaped ultrashort laser pulses being directed onto the surface in order to control a reaction process for synthesis of the product molecules from educts adsorbed on the surface.

Abstract: Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.

Abstract: In various exemplary embodiments, the present invention provides a system for the light-induced directed self-assembly (LIDSA) of periodic sub-wavelength nanostructures, including: a light source for delivering a beam of photons; a reaction chamber disposed adjacent to the light source; a gas including one or more precursor materials disposed within the reaction chamber; and a substrate disposed within the reaction chamber, wherein the substrate is positioned and configured to receive the beam of photons; wherein the beam of photons causes a periodic sub-wavelength nanostructure of one or more constituents of the one or more precursor materials to form on a surface of the substrate. In various exemplary embodiments, the present invention also provides an associated method.

Abstract: To provide an evaporation donor substrate which is used for deposition by an evaporation method and which allows reduction in manufacturing cost and high uniformity of a film which is deposited. In addition, to provide a method for manufacturing a light-emitting device using the evaporation donor substrate. The evaporation donor substrate includes a reflective layer having an opening which is formed over a substrate, a heat insulating layer having a light-transmitting property which is formed over the substrate and the reflective layer, a light absorption layer which is formed over the heat insulating layer; and a material layer which is formed over the light absorption layer.

Abstract: A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NH3 gas, an NH3 gas purge step of purging NH3 gas, and a step of further repeating the deposition step, the anneal step, and the NH3 gas purge step for at least one time. The deposition step is performed using titanium halide gas and NH3 gas as material gases and with a deposition temperature of 300° C.-450° C. to form the TiN film by a thickness of 1 nm-5 nm for each deposition step. Thus, a semiconductor device in which generation of irregularly grown objects in the TiN film is suppressed and a manufacturing method thereof can be provided.

Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

Abstract: Methods for forming coated substrates can be based on depositing material from a flow onto a substrate in which the coating material is formed by a reaction within the flow. In some embodiments, the product materials are formed in a reaction driven by photon energy absorbed from a radiation beam. In additional or alternative embodiments, the flow with the product stream is directed at the substrate. The substrate may be moved relative to the flow. Coating materials can be formed with densities of 65 percent to 95 percent of the fully densified coating material with a very high level of coating uniformity.

Abstract: A miniaturized spring element is intended to be particularly suitable for use as a beam probe or cantilever for detecting atomic or molecular forces, in particular in an atomic force microscope, and, to this end, is intended to make it possible to detect its deflection in a particularly reliable manner and with high resolution. For this purpose, the spring element contains a basic body which is formed from a matrix containing embedded nanoparticles or defects. The spring element is produced using the principle of local deposition with focused energetic particles or electromagnetic waves or by pyrolytically induced deposition.

Abstract: Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition involves low valence oxidation state metal precursors soluble in liquid and/or compressible solvent fluids at liquid, near-critical, or supercritical conditions for the mixed precursor solutions. Metal film deposition is effected via thermal and/or photolytic activation of the metal precursors. The invention finds application in fabrication and processing of semiconductor, metal, polymer, ceramic, and like substrates or composites.

Abstract: An economical method of manufacturing a plastic glazing assembly having a decorative marking and/or opaque border printed from a thermally curable ink is presented. This method includes the steps of forming a substantially transparent plastic panel; printing an opaque pattern from an ink, the printed pattern being in contact with the plastic panel; pre-drying the ink of the printed pattern to a tack-free condition; applying a weather resistant layer on the printed pattern and on the plastic panel; curing the ink of the printed pattern and the weather resistant layer; and depositing an abrasion resistant layer on the weather resistant layer. In this process the drying of the ink substantially removes the solvent from the ink without substantially curing the ink.

Abstract: The present invention, in one embodiment, provides a method of forming an organic electric device that includes providing a plurality of carbon nanostructures; and dispersing the plurality of carbon nanostructures in a polymeric matrix to provide a polymeric composite, wherein when the plurality of carbon nanostructures are present at a first concentration an interface of the plurality of carbon nanostructures and the polymeric matrix is characterized by charge transport when an external energy is applied, and when the plurality of carbon nanostructures are present at a second concentration the interface of the plurality of carbon nanostructures and the polymeric matrix are characterized by exciton dissociation when an external energy is applied, wherein the first concentration is less than the second concentration.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.

Abstract: An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtosecond laser) which produces optical radiation at an instantaneous intensity sufficient to cause non linear or otherwise enhanced interaction between optical radiation photons and the donor compound is used to decompose the donor compound and deposit the metal on the substrate. After an initial deposit of the donor compound is produced, optical radiation can be absorbed and heat the substrate in the localized area of the deposit in order to accelerate the deposition process by thermally decomposing the donor compound.

Abstract: The present invention relates to b-stageable die attach adhesives, methods of preparing such adhesives, methods of applying such adhesives to the die and other substrate surfaces, and assemblies prepared therewith for connecting microelectronic circuitry.

Abstract: A method of forming an insulating ceramic film or a metallic film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

Abstract: A water-repelling film is formed by using a vacuum ultraviolet rays chemical vapor deposition (CVD) system (100) comprising a vacuum ultraviolet rays generating section (102), a reaction room (106), and a window (104) for separating the reaction room (106) and the vacuum ultraviolet rays generating section (102). Plasma having an energy larger than 0 eV but smaller than 10 eV and organic material gas are supplied to the reaction room. A substrate (116) in the reaction room (106) is heated to maintain such a temperature as not causing damage on the substrate (116). Vacuum ultraviolet rays is applied from the vacuum ultraviolet rays generating section (102) to the inside of the reaction room (106) through the window (104).

Abstract: Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1; n is an integer greater than or equal to 0; Z is a divalent linking group; and Rf is a highly fluorinated organic group.

Abstract: A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precursor fluid is converted into a solid which forms a layer on the substrate. In accordance with the present invention, the precursor fluid is pulsed into the process chamber in a manner such that the fluid is completly exhausted or removed from the chamber in between each pulse. Light energy can be used in forming the solid layers.

Abstract: In a method of fabricating a protective film, a vacuum ultraviolet radiation CVD (Chemical Vapor Deposition) system is provided. The system includes a vacuum ultraviolet rays generator, a reactor provided with a platform for supporting a substrate, a heat retainer provided on the platform, and a window separating the vacuum ultraviolet rays generator from the reactor. Then, an organic stock gas is fed from a gas feeder into the reactor while retaining temperature of the substrate at a low temperature with the heat retainer. Simultaneously, the reactor is irradiated with vacuum ultraviolet rays from the vacuum ultraviolet rays generator through the window.

Abstract: An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtosecond laser) which produces optical radiation at an instantaneous intensity sufficient to cause non linear or otherwise enhanced interaction between optical radiation photons and the donor compound is used to decompose the donor compound and deposit the metal on the substrate. After an initial deposit of the donor compound is produced, optical radiation can be absorbed and heat the substrate in the localized area of the deposit in order to accelerate the deposition process by thermally decomposing the donor compound.

Abstract: Disclosed is a method for forming a high reflective micropattern, comprising forming a micropattern using an organometallic compound in a photoreaction or with thermal energy; and growing crystal, using the pattern as the nucleus for growing crystal, by an electro or electroless plating process. The method forms a high reflective metal pattern rapidly and efficiently without using conventional chemical vapor deposition or physical deposition methods such as sputtering.

Abstract: An exemplary method of constructing an alternating phase-shifting mask is described. This method can include providing a vapor in a vapor chamber containing a mask blank, and applying a laser to selected areas of the mask blank to deposit material on the integrated circuit substrate. The material is configured to cause a 180° phase shift at the wavelengths the mask is designed for such as 248 nm, 193 nm or 157 nm.

Abstract: An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtosecond laser) which produces optical radiation at an instantaneous intensity sufficient to cause non linear or otherwise enhanced interaction between optical radiation photons and the donor compound is used to decompose the donor compound and deposit the metal on the substrate. After an initial deposit of the donor compound is produced, optical radiation can be absorbed and heat the substrate in the localized area of the deposit in order to accelerate the deposition process by thermally decomposing the donor compound.

Abstract: Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C.

Abstract: A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250° C. to about 650° C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.

Abstract: An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask is described. This method can include providing a multi-layer mirror over an integrated circuit substrate or a mask blank, providing a buffer layer over the multi-layer mirror, providing a dual element material layer over the buffer layer, and selectively growing features on the integrated circuit substrate or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer.

Abstract: A method an apparatus for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas. The apparatus includes a reaction chamber including a support for a substrate, a device for introducing a reactive gas into the reaction chamber, an electric discharge device, and a device for forming an electric field in the reaction chamber in a direction to the support for the substrate, and an outlet for discharging the reactive gas.

Abstract: The present invention relates to an enhanced non-sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: A method for preparing a sample for observation, by the steps of: contacting a first predetermined area of the sample surface with an organic compound vapor while irradiating the first predetermined area with an ion beam to decompose the organic compound into a layer having a mask function, the layer covering the first predetermined area; and contacting a second predetermined area of the sample surface with an etching gas while irradiating the second predetermined area with an ion beam in order to remove material from the sample surface at the second predetermined area, wherein the second predetermined area includes at least part of the first predetermined area and the layer covering the first predetermined area prevents removal of material from the sample surface in the first predetermined area.