Abstract: A method for making wire grid optical elements by preferentially depositing material on a substrate is disclosed. Material can be preferentially deposited by directing an electromagnetic interference pattern on to a substrate to selectively heat areas of the substrate coincident with the interference pattern maxima. The substrate can then be exposed to gas phase material that is capable of preferentially accumulating on surfaces based on surface temperature.

Abstract: Methods and apparatuses for coating medical devices and the devices thereby produced are disclosed. In one embodiment, the invention includes a method comprising the steps of suspending the medical device in an air stream and introducing a coating material into the air stream such that the coating material is dispersed therein and coats at least a portion of the medical device. In another embodiment, the medical devices are suspended in an air stream and a coating apparatus coats at least a portion of the medical device with a coating material. The coating apparatus may include a device that utilizes any number of alternative coating techniques for coating the medical devices. This process is used to apply one or more coating materials, simultaneously or in sequence. In certain embodiments of the invention, the coating materials include therapeutic agents, polymers, sugars, waxes, or fats.

Abstract: A process for mitigating or eliminating contamination and/or degradation of surfaces having common, adventitious atmospheric contaminants adsorbed thereon and exposed to radiation. A gas or a mixture of gases is introduced into the environment of a surface(s) to be protected. The choice of the gaseous species to be introduced (typically a hydrocarbon gas, water vapor, or oxygen or mixtures thereof) is dependent upon the contaminant as well as the ability of the gaseous species to bind to the surface to be protected. When the surface and associated bound species are exposed to radiation reactive species are formed that react with surface contaminants such as carbon or oxide films to form volatile products (e.g., CO, CO2) which desorb from the surface.

Abstract: Devices, and their method of production, having coatings deposited by pulsed plasma polymerization of a macrocycle containing a heteroatom, wherein the heteroatom is oxygen, nitrogen, sulfur, or a mixture thereof. The coatings on contact lens are preferably deposited by gas phase polymerization of a cyclic ether, such as crown ether, which coatings are non-fouling and wettable, and the gas phase polymerization utilizes a pulsed discharge.

Abstract: A method for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas.

Abstract: An apparatus and method for catalyzing a reaction on a substrate (24) comprising, a light source (12), a micromirror (16) positioned to redirect light (14) from the light source (12) toward a substrate (24) wherein the redirected light (14) catalyzes a chemical reaction proximate a substrate (24), is disclosed. A computer (18) is connected to, and controls, the positioning of mirrors within the micromirror (16) to specifically redirect light to specific portions of a substrate. The substrate (24) can be placed in a reaction chamber (50), wherein the light (14) that is redirected by the micromirror (16) catalyzes a chemical reaction proximate a substrate (24).

Abstract: A system for the depositing of insulating, conducting, or semiconducting thin films is disclosed, in which the sputtering plasma is irradiated with a transverse, adjustable ultraviolet emission produced by an ultraviolet optical cavity containing a lamp discharge. The cavity irradiates the sputtering plasma volume with a sufficiently high optical flux to enact significant changes in the film produced. This effect is enabled by the device geometry, which, in the preferred embodiment, provides uniquely high efficiency and stability in the optical coupling between the lamp discharge and the sputtering plasma, resulting in the ability to significantly alter ionized and excited state populations within and directly above the sputtering plasma. The design also allows the operator to significantly control the volume and species involved in the optical interaction.

Abstract: Fluorinated chemical precursors, methods of manufacture, polymer thin filmswith low dielectric constants, and integrated circuits comprising primarily of sp2C—F and some hyperconjugated sp3C—F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

Abstract: An ozone-processing apparatus for a semiconductor process system includes an airtight process chamber and a lamp chamber, which are partitioned by a window for transmitting ultraviolet rays. A plurality of ultraviolet-ray lamps is arrayed along the window in the lamp chamber. A measurement space is defined between the window and the lamps in the lamp chamber. The lamp chamber is provided with a mount portion to set up a measuring unit therein. The measuring unit includes a sensor to be inserted into the measuring space, for measuring the light quantity of the lamps. The sensor is movable in a direction in which the lamps are arrayed.

Abstract: A method for producing well-crystallized adherent diamond layers on WC—Co substrates. An array of focused laser beams is scanned across the WC—Co sample. Useful lasers include the excimer, YAG:Nd, and carbon dioxide types. The process is conducted in open air with carbon dioxide and nitrogen gases delivered for shrouding the substrate. A luminous plasma is found a few mm above the WC—Co insert. The duration of the deposition process in a typical case is approximately 40 s. This typically gives 20-40 &mgr;m thick coatings. The vertical growth rate is about 1 &mgr;m/s.

Abstract: A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.

Abstract: Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 106 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.

Abstract: To produce a desirable amount of desirable radical and/or ion in treating a substrate such as etching the substrate, depositing a thin film on the substrate and the like by using plasma and the like. As a treating gas, a gas such as CFmIn and the like containing both a strongly bonded halogen element (F etc.) and weakly bonded halogen element (I etc.) is used. A substrate is treated by active species produced by exciting the treating gas by an excitation means capable of providing an energy which cannot dissociate the strong bond but can dissociate the weak bond. Preferable excitation means is capable of emitting a monochromatic irradiation, having a single value of excitation energy, such as electron beam, light etc., or otherwise capable of providing plasma, having a peak energy value of electrons and sharp electron energy distribution, such as UHF plasma etc.

Abstract: The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo energy for maintaining activation of the active species during transfer from the remote plasma activation region to the processing chamber. The source of photo energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist plasma processes by providing additional in-situ energy through a transparent window of the processing chamber.

Abstract: A method for treating an object with a laser including emitting a laser beam from a laser; expanding the laser beam in a first direction; removing a portion of the laser beam though a mask, the portion including at least edges of the expanded laser beam extending in the first direction; and condensing the laser beam in a second direction orthogonal to the first direction in order to form a line-shaped laser beam on an object.

Abstract: A method for monitoring the actual flow of a gas into a vacuum facility, which flow of gas resulting from setting a desired flow of gas by means of at least one adjustable mass flow controller, interconnected between said facility and a pressurized reservoir arrangement for said gas.

Abstract: Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 10.sup.6 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.

Abstract: Apparatus for determining a best trajectory for laser CVD through a strategy of acquiring a series of two-dimensional plane images of the substrate. These images, taken together, contain topographical information as well as local reflectivity and thermal mapping information. The images are combined in digital format with additional substrate mapping information to calculate a best three-dimensional trajectory for the desired laser operation. The technique is especially suitable for compensation of tilt or severe height variation on microelectronic parts. The apparatus can deposit platinum conductors on integrated circuits by pyrolytic deposition from Pt(PF.sub.3).sub.4 vapor.

Abstract: The invented apparatus is a relatively small-volumed chamber useful for processing a substrate. The apparatus includes a reference member with a substantially flat surface. The apparatus also includes a stage member with a surface that supports the substrate, and that has a gas bearing surrounding this support surface. Gas flows through the bearing are regulated to generate a seal of the substrate from ambient gases upon bringing the gas bearing close to the reference member's flat surface. The seal generated by the gas bearing can also be used to contain process gas in proximity to the substrate. Such process gas can be introduced into and exhausted from the chamber through an inlet and outlet, respectively, defined in the reference member. The apparatus can include a window fixed in the reference member. Patterned light or a particle beam can be directed through the window to the contained substrate to cause selective reactions to occur thereon.

Abstract: A processing method comprises:a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator;a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface;a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; anda fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.

Abstract: The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber sid

Abstract: Amorphously crosslinked aromatic polymeric low .kappa. materials and methods for their fabrication are provided. The subject materials are prepared by a modified transport polymerization process, in which aromatic precursors are pyrolyzed to produce radical comprising aromatic monomeric precursors which are then allowed to polymerize by deposition onto a substrate surface, where during and/or after deposition the growing polymer chain is exposed to a high energy crosslinking agent, such as high energy photons or plasma. The subject crosslinked materials find use in a variety of applications, particularly as low .kappa. dielectrics in the manufacture of integrated circuits.

Abstract: A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within a chemical vapor deposition reactor; b) providing a gaseous precursor within the reactor having the substrate positioned therein, the precursor comprising one or a combination of tetrakisdimethylamidotitanium, cyclopentadienylcycloheptatrienyltitanium (CpTiCht), bis(2,4-dimethyl-1,3-pentadienyl)titanium (BDPT), and biscyclopentadienyltitanium diazide (Cp.sub.2 Ti(N.sub.3).sub.

Abstract: The present invention is generally directed to a process and a system for transforming a liquid into a solid material using light energy. In particular, a solution containing a parent material in a liquid form is atomized in a reaction vessel and directed towards a substrate. The atomized liquid is exposed to light energy which causes the parent material to form a solid coating on a substrate. The light energy can be provided from one or more lamps and preferably includes ultraviolet light. Although the process of the present invention is well suited for use in many different and various applications, one exemplary application is in depositing a dielectric material on a substrate to be used in the manufacture of integrated circuit chips.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: This invention relates to a new technique for preparing metal devices such as guidewires for the subsequent attachment of hydrophilic coatings. The invention also relates to guidewires and other devices made according to that method.In one embodiment of the method of this invention, a hydrocarbon residue undercoat is applied to a metal guidewire core by plasma deposition. A photoactive hydrophilic polymer is then deposited on the hydrocarbon residue coating and activated by ultraviolet light. The hydrocarbon residue coating acts as a tie layer between the hydrophilic polymer and the metal guidewire core apparently by providing C--C bonds for the covalent linking of the coating material to the tie layer. The resulting article of this invention is a guidewire having the maneuverability of a metal guidewire and the biocompatibility of a lubricious, hydrophilic polymer.

Abstract: An apparatus and process are disclosed for depositing a barrier layer, such as an SiOx barrier layer, onto a moving web of substrate material in a continuous process at atmospheric pressure using a gaseous phase precursor and an oxidizer.

Abstract: The invention relates to a coated cemented carbide body for rock drilling having a substrate containing at least one metal carbide and a binder metal and an at least partly covering coating comprising at least one diamond- or cBN-layer applied by CVD- or PVD-technique. The cemented carbide body has a core of cemented carbide containing eta-phase surrounded by a surface zone of cemented carbide free of eta-phase.

Abstract: A method is provided for modifying a photosensitive chemical material which controls exposure to make spectral intensity ratio constant, adjusts the pre-tilt angles of a liquid crystal orientation film easily and accurately, and gives desired properties to the photosensitive chemical material. A photosensitive chemical material is patterned by the photochemical reaction of a photosensitive chemical material. The photosensitive chemical material is irradiated with light emitted from a light source having a line spectrum having almost single wavelength between 200 nm and 300 nm (for example, a low pressure mercury lamp or a laser lamp) according to a pattern to control the reaction of the photosensitive chemical material. Also, the photosensitive chemical material is irradiated with light having a wavelength of 300 nm or longer to make the photosensitive chemical material cause a reaction to occur that selectively generates active oxygen.

Abstract: A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within a chemical vapor deposition reactor; b) providing a gaseous precursor within the reactor having the substrate positioned therein, the precursor comprising one or a combination of tetrakisdimethylamidotitanium, cyclopentadienylcycloheptatrienyltitanium (CpTiCht), bis(2,4-dimethyl-1,3-pentadienyl)titanium (BDPT), and biscyclopentadienyltitanium diazide (Cp.sub.2 Ti(N.sub.3).sub.

Abstract: A method for chemical vapor deposition onto high aspect ratio features. Process gases including a reactant species are supplied to the surface and sufficient primary energy is supplied to the surface so as to cause the reactant species to deposit on the surface. Additional energy is supplied, preferably in the form of optical energy, that is tuned to be captured by the patterned features so as to slow the deposition rate preferentially on the patterned features.

Abstract: A process for forming a deposition film comprises introducing a gaseous starting material for forming a deposition film and a gaseous oxidizing agent having an oxidation action on the gaseous starting material separately into a reaction space to chemically contact these two, thereby generating a plurality of precursors including precursor in an excited state, and utilizing at least one of the generated precursors as a supply source for film-constituting members, thereby forming a deposition film on a substrate provided in a film-forming space, the deposition film being formed while supplying a bias energy to the substrate and changing the intensity of the bias energy.

Abstract: In a method for manufacturing electrodes for medical applications, particularly implantable stimulation electrodes, having an active layer of porous titanium nitride, a substrate of electrically conductive material that is in an atmosphere containing titanium, nitrogen and hydrogen is irradiated with an excimer laser through an optical mask, and a structure of porous titanium nitride is deposited on the substrate.

Abstract: A process for forming a deposited film on a substrate including generating a plasma in a plasma generating chamber via a light transmissive perforated diffusion plate which is located adjacent to a reaction chamber containing the substrate. The plasma thereby excites a gas, which is introduced into the reaction chamber through the light-transmissive perforated diffusion plate. A gaseous starting material for forming the deposited film is introduced into the reaction chamber and reacts with the excited gas. A deposited film is formed on the substrate while irradiating the substrate with a light scattered by the light-transmissive perforated diffusion plate.

Abstract: Laser energy is used to make precursors of crystalline materials, such as diamond, by providing an environment in which optical radiation may be efficiently absorbed to create significant precursor concentrations. In some instances this process is augmented by evaporating or liquefying a sacrifice to induce heterogeneous nucleation. In other cases two chemically and spatially distinct plasmas are juxtaposed to initiate the required chemistry.

Abstract: A halftone phase shift photomask designed so that it is possible to shorten the photoengraving process, use a production line for a conventional photomask, prevent lowering of the contract between the transparent and semitransparent regions at a long wavelength in the visible region, which is used for inspection and measurement, and also prevent charge-up during electron beam exposure, and that ordinary physical cleaning process can be used for the halftone phase shift photomask. The halftone phase shift photomask has on a transparent substrate (1) a region which is semitransparent to exposure light and a region which is transparent to the exposure light so that the phase difference between light passing through the transparent region and light passing through the semitransparent region is substantially .pi. radians. A semitransparent film that constitutes the semitransparent region is arranged in the form of a multilayer film including layers (3, 4) of chromium or a chromium compound.

Abstract: An oxidation process for an article to be treated in which, by generating ozone with a high concentration, a high treatment rate is achieved. In particular, an oxygen-containing fluid is irradiated with a vacuum ultraviolet rays emitted from a dielectric barrier discharge lamp in which xenon gas is encapsulated, producing a photochemical reaction from which ozone and an activated oxygen result. By causing this ozone and activated oxygen to contact the surface of the article to be treated, the surface of the article is oxidized. An even higher treatment rate can be achieved by generating the activated oxygen with the simultaneous use of a far ultraviolet ray source, thereby increasing the activity of the activated oxygen. Advantageously, the oxidation of the article to be treated with the vacuum ultraviolet rays and far ultraviolet rays is performed in accordance with the relationship:(p.times.d)/(1+I.sup.1/2)=0.33where I is a radiation density (mW/cm.sup.

Abstract: The present invention provides a method for removing a natural gas film or contaminant adhering on a surface of a silicon semiconductor substrate. The semiconductor substrate having the natural oxide film or contaminant adhered thereon is placed in a chamber. Then, a HCl gas is introduced into the chamber. The semiconductor substrate is heated at a temperature in the range of 200.degree..about.700.degree. C., while ultraviolet rays are irradiated into the chamber. According to the method, the reaction of the natural oxide with HCl gas is promoted by a synergistic effect of light and heat energy. Therefore, the natural oxide film or contaminant can be removed at a lower temperature with the help of the light energy.

Abstract: A method is disclosed for depositing a substance on a substrate, including the following steps: providing the substrate in a deposition chamber, providing in the chamber a vapor of the substance, providing a buffer gas in the chamber, and directing a light beam at the substrate to control deposition of the substance by causing light induced drift.

Abstract: A system and method for the printing of substrates for use in food packaging and, more particularly, a flexographic printing system and method for applying and curing radiation cured inks to a flexible, heat shrinking web employing a combination of UV radiation and EB radiation.

Abstract: Carbon fluoride solid compositions having a low fluorine-to-carbon ratio are produced by chemical vapor deposition processes. These carbon fluoride compositions have improved wettability characteristics over polytetrafluoroethylene. These compositions can be used as films, coatings on substrates, powders, and stand-alone articles. These carbon fluoride compositions are produced by energizing vapors comprised of compounds containing fluorine and carbon to cause them to degrade into fragments which are then condensed onto a substrate to form the carbon fluoride solids. These vapors can be energized by a variety of techniques, including hot filament techniques. The carbon fluoride solids find utility as films in aircraft de-icing, cookware, appliances, surgical tooling, chemical processing, gaskets, seals, diaphragms, packings, valve seats, windings, mold release components, extruder coatings, medical prosthetics, and other similar non-wetting applications.

Abstract: In a photo-CVD system, ultraviolet light is introduced into a reaction chamber from light emitting elements of ultraviolet light sources, through transparent bulb surfaces thereof, and through elongated light pipes in a sealed wall bounding the reaction chamber. This prevents molecules of reactant gas in the reaction chamber from reaching and being deposited on the transparent bulb surfaces, and thereby prevents buildup of such reactant molecules from occurring and impeding flow of ultraviolet light into the reaction chamber.

Abstract: An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

Abstract: As to technical subject matters of attempting increase of deposition rate and improvement of film quality and removing restriction of light source and source gas in the photo CVD process, the promotion of photolysis of the source gas is achieved by use of a pulse laser beam together with a continuous light, application of plural laser beams wherein each pulse of at least one second pulse laser beam is irradiated into each interval between a pulse and the next pulse in a first lase beam, and further introduction of an additive gas in addition to the source gas into a reaction vessel and particularly the provision of photo CVD process advantageously adaptable for the production of semiconductor is realized.

Abstract: A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Abstract: A process for producing a deposit of an inorganic and amorphous protective coating on an organic polymer substrate, the coating comprising compounds in the form of an oxide, nitride, carbide, or alloys thereof, by photosensitized decomposition in the gas phase, which comprises decomposing a gas medium by photosensitized decomposition, including precursors of the elements constituting the deposit of the inorganic and amorphous protective coating to be produced by photonic excitation of an impurity which has been previously introduced into the medium, said decomposition being adapted for producing an indirect transfer of energy to the molecules of the medium, thereby causing the decomposition and subsequent deposition of the these elements onto the substrate.

Abstract: An illuminating apparatus includes a light source section; an integrator section for spreading out and making uniform light generated from the light source; and a collimator lens for making the light which is spread out and made uniform by the integrator section a parallel light flux, wherein the integrator section is formed of a reflecting member for reflecting light generated from the light source section toward the collimator lens.

Abstract: A photo-assisted chemical vapor deposition system includes a reaction chamber, a susceptor in the reaction chamber supporting a wafer, a source for introducing reactant gas into the reaction chamber through an inlet port, and a cover positioned in sealed relationship to the housing and partially bounding the reaction chamber, the cover including a plurality of elongated light pipe openings each having a length comparable to the thickness of a boundary layer of the reactant gas and a diameter-to-length ratio small enough to maintain one-dimensional purge gas flow through the light pipe openings. A plurality of transparent windows are disposed in sealed relationship with the cover and bound an outer end of each of the light pipe openings. Ultraviolet light is introduced through the light pipe openings, which also provide a thick gas layer through which reactant species of the reactant gas must diffuse to reach the window surface.

Abstract: In order to so improve a process for the manufacture of a layer on a substrate wherein by means of a pulsed laser beam a coating material is ablated from a carrier, transported in the form of a current of particles to the substrate and deposited on the latter to form the layer, that it is suitable for the manufacture of thin precision layers, preferably in a defined number of atom layers, as is, for example, required in the manufacture of semiconductors, it is proposed that the layer be manufactured as thin precision layer by pulse duration and pulse intensity of the laser beam being selected such that ionization and heating-up of the coating material take place essentially only in the zone of interaction of the laser light with the coating material so the stream of particles is formed as cluster-free plasma containing single, non-coherent ions or atoms.

Abstract: An argon (Ar.sup.+) laser has a resonator. A reaction chamber is integrally formed in the resonator. A voltage is applied to electrodes, which discharge electricity to excite argon atoms in the resonator to produce a laser beam. The laser beam is continuously oscillated between total reflection mirrors disposed at opposite ends of the resonator. A substrate is disposed in the reaction chamber into which a material gas is introduced. The material gas absorbs the laser beam, to decompose and deposit as a thin film over the substrate.