Abstract: Fixture (1) for exposing two opposite ends of an object to be coated (6) to a vapor deposition while masking an intermediate portion (8) of the object against being coated, comprising an object holding device (OHD), whereas the object holding device (OHD) consists of at least one battery (3) of hole plate strips (2) which are designed and arranged that way that each single hole (retaining hole; H) is formed by a pair of hole plate strips (2) that way that the first segment (4) of the hole (H) is embodied by the preceding hole plate strip (2) and that the second segment (5) of the hole (H) is embodied by the subsequent hole plate strip (2).

Abstract: A boron structure body includes boron having each concentration of Ti, Al, Fe, Cr, Ni, Co, Cu, W, Ta, Mo and Nb being 0.1 ppmw or less and having a thickness of 0.8 to 5 mm. The boron structure body may have a tubular shape, and when used as a doping agent, a ratio of 11B that is an isotope may be 95 mass % or more. The boron structure body can be easily crushed, and a high-purity boron powder having an average particle diameter of 0.5 to 3 mm and having each metal impurity concentration of 0.3 ppmw or less can be obtained.

Abstract: A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

Abstract: The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer made of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1<P2<P3<P4 and (P2?P1)+(P4?P3)<E the distance between P1 and P2 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between P3 and P4 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer.

Abstract: A method of depositing material onto a substrate at cryogenic temperatures using beam-induced deposition. A precursor gas is chosen from a group of compounds having a melting point that is lower than the cryogenic temperature of the substrate. Preferably the precursor gas is chosen from a group of compounds having a sticking coefficient that is between 0.5 and 0.8 at the desired cryogenic temperature. This will result in the precursor gas reaching equilibrium between precursor molecules adsorbed onto the substrate surface and precursor gas molecules desorbing from the substrate surface at the desired cryogenic temperature. Suitable precursor gases can comprise alkanes, alkenes, or alkynes. At a cryogenic temperature of between ?50° C. and ?85° C., hexane can be used as a precursor gas to deposit material; at a cryogenic temperature of between ?50° C. and ?180° C., propane can be used as a precursor gas.

Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.

Abstract: A method of depositing a material on a work piece surface. The method comprising providing a deposition precursor gas at the work piece surface; providing a purification compound including a nitrogen-containing compound at the work piece surface; and directing a beam toward a local region on the work piece surface, the beam causing decomposition of the precursor gas to fabricate a deposit on the work piece surface, the deposited material including a contaminant, the purification compound causing a reduction in the concentration of the contaminant and providing a deposited material that includes less contamination than a material deposited using the same methodology but without using a purification compound.

Abstract: A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.

Abstract: A method of controlling power applied to an induction coil assembly used for densifying porous articles with a liquid matrix precursor. The control of applied power addresses dynamic changes in the electrical characteristics of the porous article being densified as it becomes denser. In particular, the power applied is controlled in accordance with changes in resonant frequency of the coupled system of the induction heating system and the porous article.

Abstract: Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.

Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.

Abstract: Provided is a magnetic disk (10) for a magnetic recording, which comprises a magnetic layer (4) for a magnetic recording, a protecting layer (5) formed over the magnetic layer (4) for protecting the magnetic layer (4), and a lubricating layer (6) formed over the protecting layer (5). The protecting layer (5) is a layer composed substantially of carbon, hydrogen and nitrogen. The atomic ratio (N/C) of nitrogen and carbon, which was calculated from the spectral intensities of N1s and C1s detected for a detection angle of 7 degrees of photoelectrons by an angularly resolved X-ray photoelectron spectroscopy, is 0.15 to 0.25. This constitution of the protecting layer (5) is excellent in wear resistance and sliding characteristics even for a film thickness of 3 nm or less and provides a magnetic disk which can avoid a high fly write trouble or the like.

Abstract: A method of growing a plurality of free-standing structures comprises providing a plurality of free-standing structures, each free-standing structure having a first end coupled to a substrate, and a terminal end; providing at least one laser beam, the laser beam having a beam waste at a point proximate to the terminal end of the free-standing structure; and moving one of the plurality of freestanding structures or the beam waste to provide a growth zone proximate to the terminal end of each of the free-standing structures such that the free-standing structures grow into the growth zones by addition of decomposing precursor components. The growth rates of each of the free-standing structures are substantially the same.

Abstract: A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.

Abstract: Induction for thermochemical processes, and associated systems and methods are disclosed. A method in accordance with a particular embodiment includes placing first and second substrates in a reactor, with each substrate having a surface facing toward the other. Method can further include directing a precursor gas into the reactor and activating an induction coil proximate to the facing surfaces of the substrates to dissociate the precursor gas. A constituent of the precursor gas is deposited on both the first and second surfaces, and heat radiated from each surface and/or a constituent deposited on the surface is received at the other surface and/or the constituent deposited on the other surface.

Abstract: The present invention relates to a nanocomposite material including graphene and a lithium-containing metal oxide on a surface of the graphene, a method for preparing the same, and an energy storage device including the same as an electrode material. According to the present invention, the nanocomposite material, in which the nano-sized lithium-containing metal oxide with high crystallinity is combined with the graphene with high specific surface area and high electrical conductivity, has an effect of achieving excellent high efficiency charge and discharge characteristics of energy storage devices such as an ultra-high capacity capacitor with high power and high energy density and a lithium secondary battery with high energy density.

Abstract: A method of manufacturing a high surface area per unit weight carbon electrode includes providing a substrate, depositing a carbon-rich material on the substrate to form a film, and after the depositing, activating the carbon-rich material to increase the surface area of the film of carbon-rich material. Due to the activation process being after deposition, this method enables use of low cost carbon-rich material to form a carbon electrode in the capacitor. The electrode may be used in capacitors, ultracapacitors and lithium ion batteries. The substrate may be part of the electrode, or it may be sacrificial—being consumed during the activation process. The carbon-rich material may include any of carbonized material, carbon aerogel and metal oxides, such as manganese and ruthenium oxide. The activation may include exposing the carbon-rich material to carbon dioxide at elevated temperature, in the range of 300 to 900 degrees centigrade.

Abstract: A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.

Abstract: An environmental barrier for a substrate of ceramic matrix composite material containing silicon, in particular containing SiC, is formed by an anticorrosion protection layer containing an aluminosilicate type compound of an alkali or alkaline-earth or rare earth element, e.g. BSAS, with a chemical barrier forming layer of aluminum nitride being interposed between the substrate and the anticorrosion protection layer.

Abstract: In a manufacturing flow for adapting the band gap of the semiconductor material with respect to the work function of a metal-containing gate electrode material, a strain-inducing material may be deposited to provide an additional strain component in the channel region. For instance, a layer stack with silicon/carbon, silicon and silicon/germanium may be used for providing the desired threshold voltage for a metal gate while also providing compressive strain in the channel region.

Abstract: The present invention relates to wear-resistant mechanical parts.

Abstract: Methods of densifying a complex-shaped and/or asymmetrical porous structure include providing a porous structure having such shape, connecting at least two regions of the porous structure with an electrically-conductive element to form a continuous electrically-conductive assembly to enable non-contact electromagnetic coupling between the porous structure and an induction coil, establishing a thermal gradient from an inner region of the porous structure to an outer surface region thereof, where the inner region is at a temperature that is initially higher than a temperature of the outer surface region and that causes decomposition of a compound to effect deposition of a solid derived from the decomposition of the compound on and within the inner porous region, exposing the porous structure to the gaseous compound to effect deposition of the solid within the porous structure, and continuing the steps of establishing and exposing until the porous structure has a predetermined mass or density.

Abstract: The present invention relates to a method of preparing wear-resistant metallic surfaces.

Abstract: The present invention is a method for localized chemical vapor deposition (CVD) for localized growing for example for carbon nanotubes (CNT), nanowires, and oxidation using a heated tip or an array of heated tips to locally heat the area of interest. As the tips moved, material such as CNTs grows in the direction of movement. The Scanning Probe Growth (SPG) or nanoCVD technique has similarities to the CVD growth; however it allows for controlled synthesis and direction and eliminates the need for masks.

Abstract: A catalytic chemical vapor deposition method and apparatus for synthesizing carbon nanotubes and/or carbon nanofibers (CNTs) on a substrate involves selectively heating a catalyst for CNT synthesis on or near the surface of the substrate. Selective heating of the catalyst is achieved using inductive heating from a radio frequency source. Selective heating of the catalyst prevents heating of the substrate and enables the synthesis of CNTs on temperature sensitive substrates.

Abstract: A diamond electrode having a sufficiently low resistance is disclosed which is realized by increasing the amount of boron added thereto. A method for producing a high-performance, high-durability electrode is also disclosed by which adhesiveness between a diamond coating and a substrate and separation resistance during electrolysis are sufficiently increased. An electrode composed of a substrate and a diamond layer coating the substrate is characterized in that the electrode is composed of a base coated with diamond and the diamond contains boron in such an amount that the boron concentration is not less than 10,000 ppm but not more than 100,000 ppm. The base is preferably made of an insulating material.

Abstract: In a method of producing a nanotube layer on a substrate by using a CVD process, the substrate is placed in a reaction chamber, which is flushed with a carbon-containing gas. Subsequently, the substrate is heated by an induction process to a temperature at which carbon from the gas phase is deposited on the substrate while forming nanotubes thereon.

Abstract: A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impurities of 0.2 to 8 atom % and has a thickness of 10 to 200 nm.

Abstract: The present invention includes carbon nanotubes whose hollow cores are 100% filled with conductive filler. The carbon nanotubes are in uniform arrays on a conductive substrate and are well-aligned and can be densely packed. The uniformity of the carbon nanotube arrays is indicated by the uniform length and diameter of the carbon nanotubes, both which vary from nanotube to nanotube on a given array by no more than about 5%. The alignment of the carbon nanotubes is indicated by the perpendicular growth of the nanotubes from the substrates which is achieved in part by the simultaneous growth of the conductive filler within the hollow core of the nanotube and the densely packed growth of the nanotubes. The present invention provides a densely packed carbon nanotube growth where each nanotube is in contact with at least one nearest-neighbor nanotube.

Abstract: A method for making a magnetic disk comprises forming first and second protective carbon layers on a magnetic layer. The first protective carbon layer is predominantly SP3 carbon. The second protective carbon layer comprises about 50% or less SP3 carbon. The second protective carbon layer is very thin, e.g. between 0.1 and 1.0 nm thick. A lubricant layer (e.g. a perfluoropolyether lubricant) is applied to the second protective carbon layer. The second protective carbon layer facilitates improved cooperation between lubricant and the disk.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Abstract: A stable compound having a vapor pressure higher by 1 order than that of Ta(NtBu)(NEt2)3 is provided as a starting material for forming a TaN film as a barrier film by the CVD method. There are further provided a process for producing the same and a method of forming a TaN film by using the same. The novel compound, tantalum tertiary amylimido tris(dimethylamide) [Ta(NtAm)(NMe2)3] has a vapor pressure of 1 Torr at 80° C., and its melting point is 36° C. This compound is obtained by allowing 1 mole of TaCl5, 4 moles of LiNMe2 and 1 mole of LiNHtAm to react with one another in an organic solvent in the vicinity of room temperature, then separating byproducts by filtration, distilling the solvent away, and distilling the product in vacuo. This compound can be used as a starting material in CVD to form a cubic TaN film on a SiO2/Si substrate at 550° C. at 0.05 Torr.

Abstract: A method for making a magnetic disk comprises forming first and second protective carbon layers on a magnetic layer. The first protective carbon layer is predominantly SP3 carbon. The second protective carbon layer comprises about 50% or less SP3 carbon. The second protective carbon layer is very thin, e.g. between 0.1 and 1.0 nm thick. A lubricant layer (e.g. a perfluoropolyether lubricant) is applied to the second protective carbon layer. The second protective carbon layer facilitates improved cooperation between lubricant and the disk.

Abstract: This invention attempts to provide a method for producing a DNA chip which can be accomplished in simple steps at a low cost, and wherein use of the resulting DNA chip reduces loss of probes and sample substances in the washing step enabling efficient use of such probe and sample. This invention also attempts to provide a DNA chip produced by such method. Accordingly, a method for producing a DNA chip comprising a substrate and a DNA-binding layer formed on the substrate wherein said DNA-binding layer is a diamond like film having a DNA-binding group is provided, and this method comprises the steps of: reducing pressure of a vacuum chamber to a predetermined degree of vacuum; feeding the chamber with a gas which is the source of said diamond like film; feeding the chamber with a gas which is the source of nitrogen; and forming the diamond like film having a DNA-binding group on the substrate by CVD. Also provided is the DNA chip produced by such method.

Abstract: There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising boron, nitrogen, and hydrogen, wherein the number of the nitrogen atom is 0.7 to 1.3 and the number of the hydrogen atom is 1.0 to 2.2 based on one boron atom, and of which dielectric constant is at most3 2.4.

Abstract: In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 gas and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.

Abstract: A method of deposing a carbon-containing substance in the pores of a porous body comprises establishing an open varying magnetic field flux loop and placing the body such that a magnetic field flux generated by the open magnetic field flux loop passes through a region of said body and heats that region, creating a thermal gradient across the body and bringing a thermally decomposable carbon-containing gas into contact with the heated region, thereby depositing a carbon-containing substance in the pores if said heated region.

Abstract: A pad conditioner having integral conditioning points. The pad conditioner includes a conditioning surface having a first integral conditioning point extending from the conditioning surface. For one embodiment the conditioning surface is formed of diamond and an array of integral conditioning points including the first integral conditioning point extends from the diamond surface.

Abstract: Objects of the invention are to provide a novel vapor deposition material for coating from which a thermal barrier coating film excellent in heat resistance and thermal shock resistance can be satisfactorily formed even by the EB-PVD method, and to provide a method of vapor deposition in which the vapor deposition material is used. The vapor deposition material comprises a zirconia sintered body containing a stabilizer, wherein the sintered body has a content of monoclinic crystals of from 25 to 90% and has a maximum thermal expansion ratio not exceeding 6×10−3 based on room temperature when heated in the temperature range of from room temperature to 1,200° C. This zirconia sintered body preferably has a tapped density of from 3.0 to 5.5 g/cm3, a porosity of from 5 to 50%, and a mode size of pores of from 0.3 to 10 &mgr;m, and in the sintered body the volume of pores of from 0.1 to 10 &mgr;m preferably accounts for at least 90% of the total pore volume.

Abstract: A process for chemical vapor deposition of titanium nitride film using thermal decomposition of a metal-organic compound is disclosed. In particular, the deposition of titanium nitride film from tetrakis dimethylamino-titanium (TDMAT) is performed at a temperature preferably below 350° C. in the presence of helium and nitrogen. The process is performed at a total pressure of about 5 torr, a nitrogen dilutant gas flow of at least 500 sccm, preferably about 1000 sccm, and an edge purge gas flow of at least 500 sccm. These process parameters, coupled with an improved thermal conduction between the wafer and the heated pedestal, lead to a conformal deposition of titanium nitride film at a rate of at least 6 Å/sec.

Abstract: The present invention provides: refractory composite materials protected against oxidation at high temperature; said materials are of the type made by a solid process and include, in characteristic manner, over their entire outside surface, a complex layer containing at least one silicate corresponding to a densification additive used to make them, silica, and a vitreous boron-containing silicate phase; precursors or intermediates for preparing said materials; said precursors including, in characteristic manner, over their entire outside surface, at least one layer of a precursor for borosilicate glass or a layer of borosilicate glass; and a method of preparing said materials (by preparing said precursors) and a method of preparing said precursors.

Abstract: A volatile organogallium compound of formula(I), an azidodialkylgallium complexed with a hydrazine derivative, can form a GaN film having no nitrogen defects by a metal organic chemical vapor deposition(MOCVD): R1R2(N3)Ga.(R3HNNR4H)  (I) wherein, R1 and R2 are each independently C1-5 alkyl; and R3 and R4 are each independently hydrogen or C1-5 alkyl.

Abstract: A method for treating diamond for improving the oxidation resistance and the mechanical strength of said diamond crystals includes forming a mixture of diamond crystals, a source of boron, and inert particles. This mixture is heated at a temperature of between about 800° and 1200° C. for a time adequate to diffuse boron into the surface of the diamond crystals for improving the oxidation resistance and the mechanical strength of the boron-diffused diamond crystals. The resulting diamond crystals have improved oxidation resistance and improved mechanical strength by virtue of having had boron thermally diffused into the surface of thereof.

Abstract: Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.

Abstract: A method for making a multi-layered integrated circuit structure, includes depositing a methyl compound spin on glass layer over a substrate. The spin on glass layer is treated by plasma-deposition to form a SiO2 skin on the methyl compound spin on glass layer and then treated again by plasma-deposition to form a cap layer which adheres to the SiO2 skin.

Abstract: There is disclosed a pyrolytic boron nitride container for accommodating a material serving as a source of molecular beams for molecular beam epitaxy, wherein the transmissivity of the pyrolytic boron nitride container with respect to light having a wave number of 2600 cm−1 to 6500 cm−1 has a profile such that the transmissivity changes in the height direction of the container. The pyrolytic boron nitride container can be manufactured through a simple process and at low cost. The pyrolytic boron nitride container can prevent material melt from rising along the inner wall surface and prevent splashed material melt from adhering to the upper portion of the container. Further, the pyrolytic boron nitride container can stabilize molecular beam epitaxial growth and improve the quality of epitaxial film.

Abstract: The present invention relates to a coating method for the preparation of a coated nuclear fuel. Particularly, the present invention relates to the coating method of nuclear fuel surface with more than two coated layers of carbides, borides or nitrides and their compounds comprising deposition or permeation steps of i) elements or mixture that can form carbides, borides or nitrides and ii) a layer of pyrolytic carbon or boron prepared by chemical vapor deposition(CVD) or sputtering in sequence or in reverse sequence, or nitrogen prepared by gas permeation in sequence, on the nuclear fuel surface. The coated layers are formed with carbides, borides, nitrides or their mixture at high temperature and pressure by a combustion synthesis.

Abstract: A low dielectric constant gap-fill process using high density plasma (HDP) deposition is provided for depositing a boron-doped silicon oxide layer to eliminate the damaging effects of fluorine on underlying circuitry while still maintaining a low dielectric constant for an intermetal dielectric (IMD) layer.

Abstract: For the application of a scratch protection layer on plastic substrates, a plasma is produced by the plasma CVD method, away from the individual plastic substrate, in an excitation gas, and this excitation gas is supplied through a tube to the plastic substrate. Subsequently, an antireflection layer is applied by means of a gas flow sputter source. The apparatus provided for this has a plasma CVD chamber (1) and a gas flow sputter chamber (2), next to one another. The plastic substrates (7,8) to be coated are transported from the plasma CVD chamber (2) to the gas flow sputter chamber (1) with the aid of a transporting device (3), designed as a turning plate.

Abstract: In order to form a film of organic-inorganic hybrid material, such as a perovskite material, in a selected stoichiometric ratio upon a surface of a substrate, the proposed method entails a number of simple steps. First, a substrate and a selected quantity of an organic-inorganic hybrid material are placed in a chamber, with the hybrid material being placed on a heater. Then, the hybrid material is heated sufficiently, as by passing an electric current through the heater, to cause its total ablation. As a consequence, a film of the organic-inorganic hybrid material, in the aforesaid selected stoichiometric ratio, reassembles as a film upon a surface of the substrate. During the heating step, the chamber may be either evacuated to a pressure below 10.sup.-3 torr or filled with an inert gas, such as nitrogen.