Abstract: A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure value until the chamber reaches a second pressure value and at a first temperature value, wherein the second pressure value is a predefined percentage of the first pressure value. The temperature in the chamber is increased to a second temperature value for a selenization process so that the pressure in the chamber increases to a third pressure value. Residual gas that is generated during the selenization process can be removed from the chamber. A second inert gas mixture that includes hydrogen sulfide is added into the chamber until the chamber reaches a fourth pressure value. The temperature in the chamber is increased to a third temperature value for a sulfurization process. The chamber is cooled after the sulfurization process.

Abstract: A coating is formed by chemical vapor deposition an electrically heated filament which is passed through an end plate into a deposition chamber and leaves the deposition chamber through a similar end plate. The filament slides through an entrance passage into the deposition chamber. The entrance passage is formed from misaligned portions which press the filament into direct electrical contact with their walls. A tube communicates with a chamber between the ends of the passage and acts as a sealing means to prevent gas escaping from the deposition chamber through the entrance passage. The end plate operates in exactly the same manner. As no mercury or a low-melting point eutectic alloy is used, no contaminants associated therewith are produced and the resultant coated filament is free of such contaminants.

Abstract: The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer made of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1<P2<P3<P4 and (P2?P1)+(P4?P3)<E the distance between P1 and P2 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between P3 and P4 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma.

Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.

Abstract: A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.

Abstract: Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.

Abstract: A coating apparatus (700) is provided including: (i) a vacuum chamber (16) for coating a substrate (12) with coating material heated by a wire (14); and (ii) an actuator system (18) including a motorised drive (20). The actuator system is configured for tensioning the wire (14) during the coating. Furthermore, a method of manufacturing a coated substrate (12) is provided including: (i) tensioning a wire (14) by an actuator system (18) including a motorised drive; and (ii) coating the substrate (12) with a coating material (28), the coating being under vacuum conditions. The coating includes heating at least a portion (14a) of the wire (14) to an operating temperature for inducing a temperature increase in the coating material before the coating material is deposited over substrate (12).

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas comprising silicon elements to the silicon particles provided in the reaction pipe; and a heater unit configured to supply heat to an internal space of the reaction pipe, with a heater channel in which inert gas flows serially.

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a head; a first body part connected with the head, located under the head, the first body part having a first reaction pipe provided therein; a second body part connected with the first body part, located under the first body part, the second body part having a second reaction pipe provided therein; and a bottom part connected with the second body part, located under the second body part, the bottom part having a flowing-gas supply nozzle, a reaction gas supply nozzle, a heater and an electrode assembled thereto.

Abstract: A method to grow a boule of silicon carbide is described. The method may include flowing a silicon-containing precursor and a carbon-containing precursor proximate to a heated filament array and forming the silicon carbide boule on a substrate from reactions of the heated silicon-containing and carbon-containing precursors. Also, an apparatus for growing a silicon carbide boule is described. The apparatus may include a deposition chamber to deposit silicon carbide on a substrate, and a precursor transport system for introducing silicon-containing and carbon-containing precursors into the deposition chamber. The apparatus may also include at least one filament or filament segment capable of being heated to a temperature that can activate the precursors, and a substrate pedestal to hold a deposition substrate upon which the silicon carbide boule is grown. The pedestal may be operable to change the distance between the substrate and the filament as the silicon carbide boule is grown.

Abstract: The process for producing polycrystalline silicon by feeding a reaction gas containing a silane gas and a hydrogen gas into a reaction vessel equipped with silicon core members erected on the electrodes, heating the silicon core members by flowing an electric current thereto to a temperature at which silicon deposits, forming polycrystalline silicon rods by allowing the formed silicon to deposit on the silicon core members, and discharging the discharge gas after the reaction from the reaction vessel, wherein the discharge gas discharged from the reaction vessel is quenched so that the temperature thereof drops from 800° C. down to 500° C. in not longer than 0.1 second.

Abstract: A hot wire chemical vapor deposition apparatus for use in depositing thin films such as amorphous or epitaxial silicon upon a surface of a wafer or substrate by cracking a source or precursor gas such as silane. The apparatus includes a vacuum chamber and a source of precursor gas operable to inject the precursor gas into the chamber. The HWCVD apparatus also includes a heater with a support surface exposed to the deposition chamber, and the heater is operable to heat a substrate positioned upon the support surface. The apparatus includes a catalytic decomposition assembly with a filament positioned between the heater and the precursor gas inlet for selectively passing a current through the filament to resistively heat material of the filament. The filament material may be carbide such as tantalum carbide, which may be coated on a graphite core.

Abstract: Induction for thermochemical processes, and associated systems and methods are disclosed. A method in accordance with a particular embodiment includes placing first and second substrates in a reactor, with each substrate having a surface facing toward the other. Method can further include directing a precursor gas into the reactor and activating an induction coil proximate to the facing surfaces of the substrates to dissociate the precursor gas. A constituent of the precursor gas is deposited on both the first and second surfaces, and heat radiated from each surface and/or a constituent deposited on the surface is received at the other surface and/or the constituent deposited on the other surface.

Abstract: A nanostructure includes a plurality of metal nanoblades positioned with one edge on a substrate. Each of the plurality of metal nanoblades has a large surface area to mass ratio and a width smaller than a length. A method of storing hydrogen includes coating a plurality of magnesium nanoblades with a hydrogen storage catalyst and storing hydrogen by chemically forming magnesium hydride with the plurality of magnesium nanoblades.

Abstract: The invention relates to a CVD reactor comprising a heatable body (2, 3) disposed in a reactor housing, a heating device (4, 17) for heating the body (2, 3) located at a distance from the body (2, 3), and a cooling device (5, 18) located at a distance from the body (2, 3). The heatable body, the heating device, and the cooling device are arranged such that heat is transferred from the heating device (4, 17) across the space between the heating device (4, 17) and the body (2, 3) to the body (2, 3), and from the body (2, 3) across the space between the body (2, 3) and the cooling device (5, 18) to the cooling device (5, 18). In order to be able to affect the surface temperature of the heated process chamber walls in a locally reproducible manner, control bodies (6, 19) can be inserted into the space between the cooling and/or heating device (4, 5, 17, 18). During the thermal treatment or between sequential treatment steps, said bodies are displaced such that the heat transport is locally affected.

Abstract: Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H2) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.

Abstract: A method and apparatus are disclosed for improving densification of porous substrate using a film boiling process. In particular, the disclosed method and apparatus permit more complete densification of a substrate (i.e., densification closer to the surface of the substrate) by providing a sort of barrier that reduces cooling of the surface of the substrate being densified caused by contact with the relatively cool boiling liquid precursor of the densifying material, such as carbon. In particular, contact between the substrate and the liquid precursor is reduced using one or both of physical barriers (such as a mesh material) or structures that promote the formation of an insulating gaseous layer between the substrate and the liquid precursor (such as a plate closely spaced apart from the surface of the porous substrate).

Abstract: A gas delivery device is for use in low pressure Atomic Layer Deposition at a substrate location. The device includes a first generally elongate injector for supplying process gas to a process zone, a first exhaust zone circumjacent the process zone, and a further injector circumjacent the first exhaust gas for supplying purge or inert gas at an outlet surrounding the process zone having a wall for facing the location circumjacent the outlet to define at least a partial gas seal.

Abstract: A deposition apparatus 50 includes a chamber 1 having at its top section a gas inlet 4 for supplying deposition gas 25. Inside chamber 1 is a susceptor 7 on which to place a substrate 6; a heater 8 located below the substrate 6; and a liner 2 for covering the inner walls of the chamber 1. Apparatus 50 deposits a film on the substrate 6 by supplying deposition gas 25 from gas inlet 4 into chamber 1 while heating substrate 6. An upper electric resistance heater cluster 35 is located between the inner walls of the chamber 1 and liner 2 such that the upper heater 35 surrounds the liner 2. The upper heater 35 is divided vertically into electric resistance heaters 36, 37, and 38 which are independently temperature-controlled. The substrate 6 is heated with the use of both heater 8 and the upper heater cluster 35.

Abstract: A reaction chamber system, and related devices and methods for use in the system, are provided in which reduced power consumption can be achieved by providing a thin layer of gold on one or more components inside a reaction chamber. The reaction chamber system can be used for chemical vapor deposition. The gold coating should be maintained to a thickness of at least about 0.1 microns, and more preferably about 0.5 to 3.0 microns, to provide a suitable emissivity inside the reaction chamber, and thus reduce heat losses.

Abstract: A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: An electrode is used to perform discharge surface treatment of a work piece. The electrode is made of a green compact obtained by compression-molding an electrode material including powder of any of a metal, a metallic compound, and ceramics. The discharge surface treatment includes generating an electric discharge between the electrode and the work piece in an atmosphere of a machining medium and forming a film consisting of a machining material on a surface of a work piece using energy produced by the electric discharge. The powder has an average particle diameter of 5 micrometer to 10 micrometers, and contains 40 volume percent or more of a component not forming or less easily forming carbide as a component for forming the film on the work piece. The electrode has a hardness in a range of B to 8B tested with a pencil scratch test for a coating film.

Abstract: Methods of densifying a complex-shaped and/or asymmetrical porous structure include providing a porous structure having such shape, connecting at least two regions of the porous structure with an electrically-conductive element to form a continuous electrically-conductive assembly to enable non-contact electromagnetic coupling between the porous structure and an induction coil, establishing a thermal gradient from an inner region of the porous structure to an outer surface region thereof, where the inner region is at a temperature that is initially higher than a temperature of the outer surface region and that causes decomposition of a compound to effect deposition of a solid derived from the decomposition of the compound on and within the inner porous region, exposing the porous structure to the gaseous compound to effect deposition of the solid within the porous structure, and continuing the steps of establishing and exposing until the porous structure has a predetermined mass or density.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A method for producing a metallized image on a sheet material includes impregnating the material with a metal salts-containing solution and exposing the specified material points to a pulse laser radiation. The interaction of the pulses with the solution within a laser spot irritates a photochemical reaction resulting in a metal ion reduction into the elementary state thereof by associating the required number of electrons and deposition of metallic film which is firmly fixed to the filler of the sheet material in the laser spot area on the material surface. In case of sufficient laser radiation power, a recess is formed on the sheet material surface, and the metallic film is deposited on the bottom of the recess.

Abstract: The present invention relates to a method for producing an at least partially corrosion protected and in particular, shiny metallic and/or non-metallic substrate, comprising a) the provision of a substrate with an at least partially coatable surface, and b) the application of at least one metallic protective layer, containing a first metal, a first precious metal or a first metal alloy, and at least one salt, one oxide, double oxide, oxide hydrate, sulphide, halogenide, nitride, carbide, carbon nitride, boride, silicide, oxyhalogenide and/or salt of a second metal, second precious metal or second metal alloy.

Abstract: A coating is formed by chemical vapour deposition an electrically heated filament which is passed through an end plate into a deposition chamber and leaves the deposition chamber through a similar end plate. The filament slides through an entrance passage into a first electrode chamber, around part of a wheel electrode into the deposition chamber. The passage of the filament around the wheel electrode provides adequate direct electrical contact. The end plate operates in exactly the same manner. As no mercury or a low-melting point eutectic alloy is used, no contaminants associated therewith are produced and the resultant coated filament is free of such contaminants.

Abstract: A system and method for that allows one part of an atomic layer deposition (ALD) process sequence to occur at a first temperature while allowing another part of the ALD process sequence to occur at a second temperature. In such a fashion, the first temperature can be chosen to be lower such that decomposition or desorption of the adsorbed first reactant does not occur, and the second temperature can be chosen to be higher such that comparably greater deposition rate and film purity can be achieved. Additionally, the invention relates to improved temperature control in ALD to switch between these two thermal states in rapid succession.

Abstract: A method and apparatus are disclosed for improving densification of porous substrate using a film boiling process. In particular, the disclosed method and apparatus permit more complete densification of a substrate (i.e., densification closer to the surface of the substrate) by providing a sort of barrier that reduces cooling of the surface of the substrate being densified caused by contact with the relatively cool boiling liquid precursor of the densifying material, such as carbon. In particular, contact between the substrate and the liquid precursor is reduced using one or both of physical barriers (such as a mesh material) or structures that promote the formation of an insulating gaseous layer between the substrate and the liquid precursor (such as a plate closely spaced apart from the surface of the porous substrate).

Abstract: The object of the present invention is to provide an apparatus for manufacturing a gas barrier plastic container which simultaneously satisfies the condition that the same vacuum chamber can be used even when the container shapes are different, the condition that a high-frequency power source is unnecessary, and the condition that film formation can be carried out for a plurality of containers inside one vacuum chamber in order to make the apparatus low cost. In an apparatus for forming a film on the inner surface of a container, a thermal catalyst is supported on a source gas supply pipe, and the source gas supply pipe is inserted into the port of the container, followed by film formation. In an apparatus for forming a film on the outer surface of a container, a thermal catalyst is arranged on the periphery of the plastic, and a source gas is blown out through the source gas supply pipe while bringing the source gas into contact with the thermal catalyst for film formation.

Abstract: A method for producing a disk shaped workpiece with a dielectric substrate includes treatment in a plasma process volume between two electrode faces bounding a high-frequency plasma discharge. One electrode face is of dielectric material and is at a high-frequency potential with a varying distribution along the face. The other electrode face is metallic. Reactive gas is introduced into the process volume through an aperture pattern. The dielectric substrate, before treatment, is at least regionally coated with a layer material to whose specific resistance applies: 10?5 ?cm??10?1 ?cm, and to the resulting surface resistance RS of the layer applies: 0<RS?104 ?. Subsequently, the coated substrate is positioned on the metallic electrode face and is etched or coated reactively under plasma enhancement in the plasma process volume.

Abstract: Methods and apparatus for controlling and delivering a vaporous element or compound, for example, selenium or sulfur, from a solid source to a work piece are provided. The methods and apparatus may be used in photovoltaic cell manufacturing. The apparatus may comprise a treatment chamber, for example, a box furnace or a tube furnace. The chamber may include an inner enclosure, an outer enclosure, and heating sources capable of independent thermal control, for example, in compliance with a predetermined heating schedule. The apparatus include devices and mechanisms for isolating the treatment chambers from the ambient environment. The methods and apparatus may be adapted to control metalloid vapor delivery in photovoltaic cell processing, for example, the processing of CIGS and CIGSS photovoltaic cells.

Abstract: A continuous, uninterrupted two-step treatment process capable of forming nanometer scale physical structures on the surface of articles fabricated from metallic, ceramic, glass, or plastic materials, and then depositing a thin conformal coating on the nanostructured surface such that the physical structures previously produced are neither masked nor are the dimensions of the physical structures substantially altered. In an additional embodiment, a thicker coating can be grown from the thin conformal coating which itself can be nanostructured as it is deposited. In this case adhesion of the thicker coating is not dependent upon the use of conventional surface pretreatments such as machining, chemical etching, or abrasive blasting. Surface texturing may be performed by ion beam sputtering, and ion assisted coating forms the thin conformal coating, and thicker coating if desired. The treatment process is useful for improving the mechanical, catalytic, chemical, or biological activity of the surfaces so treated.

Abstract: A process for coating a non-uniform, thin-film, dichroic pattern to a wheel rim or motorcycle part. The thin-film coating adds a colored or iridescent pattern to the wheel rim or motorcycle part, while maintaining other characteristics, such as brilliance, shine, durability and general appearance. The coating is intentionally non-uniform. It may be varied, and may have different patterns and color among different articles, and even among different areas on the same article. The thin-film coating may be added by various techniques known in the art, but is preferably applied by sputtering a silicon or titanium target to obtain the thin-film on a chromed wheel rim.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

Abstract: A series of noble metal organometallic complexes of the general formula (I): MLaXb(FBC)c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide.

Abstract: The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hydrazine-based compound coordinated with a central metal thereof, and a method of forming a metal film or pattern using the same. Further, the present invention provides a composition containing an organometallic compound and a hydrazine-based compound, and a method of forming a metal film or pattern using the same. Additionally, the present invention is advantageous in that a pure metal film or pattern is formed using the organometallic precursor or composition through a simple procedure without limiting atmospheric conditions at a low temperature, and the film or pattern thus formed has excellent conductivity and morphology. Therefore, the film is useful in an electronic device field including flexible displays and large-sized TFT-LCD.

Abstract: This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N?-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.

Abstract: In a method of producing a nanotube layer on a substrate by using a CVD process, the substrate is placed in a reaction chamber, which is flushed with a carbon-containing gas. Subsequently, the substrate is heated by an induction process to a temperature at which carbon from the gas phase is deposited on the substrate while forming nanotubes thereon.

Abstract: The present invention provides an organic compound for CVD raw material prepared by mixing a first organometallic compound and at least one second organometallic compound, said first organometallic compound having a central metal atom and at least one ligand coordinated thereto and said second organic compound having the same central metal as that of the first organometallic compound and at least one different ligand coordinated thereto from the ligand of the first organometallic compound, wherein the first and second organometallic compounds differ in decomposition behavior. In particular, a CVD raw material having both easy handling and good adhesiveness to thin film, which have not been so far sufficiently compatible with each other, can be obtained by mixing a cyclopentadienyl complex or a derivative thereof as the first organometallic compound, and a ?-diketonato compound as the second organometallic compound.

Abstract: A metal bis-triflimide compound having the formula: [Mx]n+[(N(SO2CF3)2)(nx?yz)](nx?yz)?[Ly]z? where M is a metal selected from the metals in groups 5 to 10, 12 and 14 to 16 and Cu, Au, Ca, Sr, Ba, Ra, Y, La, Ac, Hf, Rf, Ga, In, Tl, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Lu and the actinides; L is a negative or neutral ligand; n is 2,3,4,5,6,7 or 8; x is greater than or equal to 1 y is 0,1,2,3,4,5,6,7 or 8; and z is 0,1,2,3 or 4.

Abstract: A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry “built into” a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.

Abstract: Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3?n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.