Abstract: An apparatus and related method for cooling a hard metal applied in a molten or semi-molten state to the surface of a metal substrate employ a chill block chilled by a cryogenic coolant conducted through a coolant passage in the chill block with at least one ejector port in communication with the coolant passage arranged to eject cryogenic coolant from the chill block onto the hand metal for further cooling the hard metal. An alloy steel substrate preheated to 300 to 600 degrees Fahrenheit has a hard metal applied thereto by an arc welding process.

Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract: A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

Abstract: A polycrystalline silicon reactor which can prevent polycrystalline silicon which deposits on the surface of an electrode holding a silicon seed rod from being peeled off is provided. In a polycrystalline silicon reactor which applies an electric current to a silicon seed rod provided within a furnace, thereby heating the silicon seed rod, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod, the reactor includes, at a bottom plate of the furnace, an electrode holder provided so as to be electrically insulated from the bottom plate, and a seed rod holding electrode connected to the electrode holder, and holding the silicon seed rod toward the upside. Concavo-convex portions exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode.

Abstract: Surface metallization technology for ceramic substrates is disclosed herein. It makes use of a known phenomenon that many metal—metal oxide alloys in liquid state readily wet an oxide ceramic surface and strongly bond to it upon solidification. To achieve high adhesion strength of a metallization to ceramic, a discrete metallization layer consisting of metal droplets bonded to ceramic surface using metal—metal oxide bonding process is produced first. Next, a continuous metal layer is deposited on top of the discrete layer and bonded to it using a sintering process. As a result a strongly adhering, glass-free metallization layer directly bonded to ceramic surface is produced. In particular, the process can be successfully used to metalize aluminum nitride ceramic with high thermal and electrical conductivity copper metal.

Abstract: An apparatus and method for manufacturing thin-film CdS/CdTe photovoltaic modules in a vacuum environment. The apparatus deposits CdS and CdTe layers onto a substrate using heated pocket deposition, a form of physical vapor deposition (PVD) in which a material thermally sublimes from a thermal sublimation source block and is deposited onto a substrate. The thermal sublimation source block includes a pocket having a lower surface into which an array of holes is formed to house plugs of deposition material. Upon heating, deposition material sublimes from a surface of each plug of deposition material, and the surface of each plug regresses into its corresponding hole while maintaining a constant surface area. The sublimation surface area of deposition material across the pocket remains substantially constant during an extended deposition process, and the deposition material is substantially free of undesired thermal radiation from the substrate.

Abstract: Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.

Abstract: A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.

Abstract: A multi-layered article includes a substrate; a resin pattern layer; and a thin film coating layer. The substrate, the resin pattern layer, and the thin film coating layer are sequentially layered on each other. A protective film or a first protective coating layer is layered on a surface of the thin film coating layer that faces away from the resin pattern layer. A second protective coating layer is interposed between the thin film coating layer and the protective film or the first protective coating layer. A primer coating layer is interposed between the resin pattern layer and the thin film coating layer.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A process for depositing nanometer-sized metal particles onto a substrate in the absence of aqueous solvents, organic solvents, and reducing agents, and without any required pre-treatment of the substrate, includes preparing an admixture of a metal compound and a substrate by dry mixing a chosen amount of the metal compound with a chosen amount of the substrate; and supplying energy to the admixture in an amount sufficient to deposit zero valance metal particles onto the substrate. This process gives rise to a number of deposited metallic particle sizes which may be controlled. The compositions prepared by this process are used to produce polymer composites by combining them with readily available commodity and engineering plastics. The polymer composites are used as coatings, or they are used to fabricate articles, such as free-standing films, fibers, fabrics, foams, molded and laminated articles, tubes, adhesives, and fiber reinforced articles.

Abstract: A method and system for purifying polymers to use with medical devices, particularly for a drug eluting stent, is described.

Abstract: Methods and apparatus for controlling and delivering a vaporous element or compound, for example, selenium or sulfur, from a solid source to a work piece are provided. The methods and apparatus may be used in photovoltaic cell manufacturing. The apparatus may comprise a treatment chamber, for example, a box furnace or a tube furnace. The chamber may include an inner enclosure, an outer enclosure, and heating sources capable of independent thermal control, for example, in compliance with a predetermined heating schedule. The apparatus include devices and mechanisms for isolating the treatment chambers from the ambient environment. The methods and apparatus may be adapted to control metalloid vapor delivery in photovoltaic cell processing, for example, the processing of CIGS and CIGSS photovoltaic cells.

Abstract: A method of making an electron-emitting device including the steps of (A) preparing a member comprising first and second substances composed of carbon, wherein the substances have respective reaction rates different from each other for a gas, and (B) heating the member in an atmosphere containing the gas.

Abstract: A continuous, uninterrupted two-step treatment process capable of forming nanometer scale physical structures on the surface of articles fabricated from metallic, ceramic, glass, or plastic materials, and then depositing a thin conformal coating on the nanostructured surface such that the physical structures previously produced are neither masked nor are the dimensions of the physical structures substantially altered. In an additional embodiment, a thicker coating can be grown from the thin conformal coating which itself can be nanostructured as it is deposited. In this case adhesion of the thicker coating is not dependent upon the use of conventional surface pretreatments such as machining, chemical etching, or abrasive blasting. Surface texturing may be performed by ion beam sputtering, and ion assisted coating forms the thin conformal coating, and thicker coating if desired. The treatment process is useful for improving the mechanical, catalytic, chemical, or biological activity of the surfaces so treated.

Abstract: A ceramic heater for heating a semiconductor wafer under processing and has a layered structure wherein on one surface of a supporting substrate made of carbon or a carbon-based composite material, successively formed layers including an insulating layer, and electroconductive layer as an electric heating element and a dielectric layer. A first step for partly or completely removing the layer or layers having degraded properties by means of a suitable method such as sandblasting and a second step of re-forming the layer or layers having been removed in the first step. The invention allows for a substantial cost decrease as compared with the conventional way by replacing the worn-out ceramic heater with a newly manufactured one.

Abstract: A low-radiation-rate film, made of a material whose radiation rate is lower than that of a heater substrate, is formed at least entirely over the surface of a heat-subject-placing surface of a heater substrate. By applying patterning to the low-radiation-rate film, the exposure rate of the heater substrate is varied such that the radiation rate becomes smaller from the center part of the heat-subject-placing surface toward the outer peripheral part thereof, thereby enabling a uniform temperature across the surface. In addition, the power supply is reduced, thermal stress is eliminated, the wiring design flexibility is increased, and the reliability is increased by preventing short-circuit accidents.

Abstract: A network of electronic devices is provided. The network comprises an organized matrix of armchair nanotubes and zigzag nanotubes.

Abstract: The present invention provides electrical devices having controlled electrical properties and being formed from nanotube components, together with a method of constructing the devices. In one example, the electrical device is formed from the central nanotube of a zigzag type interconnected between two nanotubes of an armchair type. The method of forming the nanotube structure includes connecting a first end of a zig-zag type nanotube to an end of an armchair type nanotube, and connecting a second end of the zig-zag type nanotube to an end of a second armchair type nanotube.

Abstract: Carbon nanotubes are formed on carbon paper by first depositing a metal catalyst on the carbon paper, and passing a feedstock gas containing a source of carbon over the substrate while applying an electrical current thereto to heat the substrate sufficiently to generate a reaction between the catalyst and the feedstock gas. Alternatively, inert gas under pressure is passed through a tubular metal cathode while passing an electric current through the cathode to produce a plasma of fine catalyst particles which are deposited on a porous carbon substrate, and a feedstock gas containing a source of carbon is passed over the substrate to cause a reaction between the catalyst and the carbon source resulting in the formation of carbon nanotubes.

Abstract: High-Tc superconducting ceramic oxide products and macroscopic and microscopic methods for making such high-Tc superconducting products. Completely sealed high-Tc superconducting ceramic oxide provides are made by a macroscopic process including the steps of pressing a superconducting ceramic oxide powder into a hollow body of a material inert to oxygen; heat treating the superconducting ceramic oxide powder packed body under conditions sufficient to sinter the ceramic oxide powder; and then sealing any openings of the body. Optionally, a waveform or multiple pulses of alternate magnetic filed can be applied during the heat treatment.

Abstract: The present invention provides novel molecular structures, which are suitable for use as electrical devices. In one example, the molecular structure comprises a central nanotube of a zigzag type (9) interconnected between two nanotubes of an armchair type (6,8).

Abstract: Hot-filament chemical vapor deposition has been used to deposit copolymer thin films consisting of fluorocarbon and siloxane groups. The presence of covalent bonds between the fluorocarbon and organosilicon moieties in the thin film has been confirmed by Infrared, X-ray Photoelectron (XPS) and solid-state 29Si, 19F, and 13C Nuclear Magnetic Resonance (NMR) spectroscopy. The film structure consists of chains with linear and cyclic siloxane groups and CF2 groups as repeat units.

Abstract: Nanotube films and articles and methods of making the same. A nanotube films produced from a conductive article includes an aggregate of nanotube segments. The nanotube segments contact other nanotube segments to define a plurality of conductive pathways along the article. The nanotube segments may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining a pattern within the fabric in which the pattern corresponds to the conductive article.

Abstract: The prevent invention improves the film thickness distribution in the direction of revolution of substrates by a simple manner in a method for forming coating films, wherein a evaporating source 3 is disposed at a predetermined distance from substrates 2, and when a coating film material is applied from the evaporating source 3 onto the substrate surfaces while revolving the substrates 2, coating films are formed on the substrate surfaces in a condition where the radius of curvature of the substrates 2 obtained by bending the substrates 2 within the elasticity range is made equal to the radius of revolution of the substrates 2.

Abstract: The present invention has several plausible embodiments. In one embodiment an apparatus for coating a medical device is provided. This apparatus includes a coating chamber, a vibrating structure within the coating chamber the vibrating structure capable of suspending a medical device positioned in the coating chamber, and a coating source, the coating source positioned to introduce coating into the coating chamber. In another embodiment a method of coating a medical device is provided. This method includes moving a medical device into a predetermined coating area, vibrating a structure below the medical device, the vibration of the structure forcing the medical device away from the vibrating structure, and coating at least a portion of the medical device that has moved away from the vibrating structure.

Abstract: An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.

Abstract: A substrate processing device is provided in which an interior rotating body for a substrate holder, provided in the interior of a vacuum chamber, and an external rotating body, provided in the exterior of said vacuum chamber, are magnetically coupled, and which includes a can-seal type magnetic coupling-type rotation introduction mechanism which, by the rotational movement of the abovementioned exterior rotating body, controls the rotational movement of the abovementioned interior rotating body. A heat-accumulating member, maintained at a predetermined temperature, and a device for performing heat exchange between the heat-accumulating member and the substrate holder, are provided in said vacuum chamber interior.

Abstract: The present invention provides for a method to reduce the strength of the honeycomb of a jet turbine stator, increasing its machinability, with a resultant reduction in measured peak tooth temperature, while maintaining or even improving its high temperature capability, so as not to limit its operating environment. The air seal functionality is unaffected, and even improved in some instances. The machinability of the honeycomb is increased by using a light element diffused into the honeycomb ribbon to produce the effect of reducing its strength and ductility while maintaining the environmental resistance needed. The present invention also includes the stator honeycomb produced by the foregoing method.

Abstract: The prevent invention improves the film thickness distribution in the direction of revolution of substrates by a simple manner in a method for forming coating films, wherein a evaporating source 3 is disposed at a predetermined distance from substrates 2, and when a coating film material is applied from the evaporating source 3 onto the substrate surfaces while revolving the substrates 2, coating films are formed on the substrate surfaces in a condition where the radius of curvature of the substrates 2 obtained by bending the substrates 2 within the elasticity range is made equal to the radius of revolution of the substrates 2.

Abstract: A method of constructing nanotube matrix material in a controlled manner wherein, a nanotube fragment having at least two potential energy-binding surfaces including two distinct levels of binding potential energy of H-bonding and a second lower binding potential energy of covalent bonding, are used for binding corresponding nanotube fragments. The method comprises the steps of: (a) bringing a solution of nanotube fragments together; (b) heating the solution to a temperature to disrupt the H-bonding but insufficient to denature the covalent bonding; (c) agitating the solution and slowly reducing the temperature (annealing) to a temperature where the H-bondings are stable, producing an optimal configuration; (d) adding a reagent to the solution to cause ring closure; and (e) introducing a catalytic element for purification and dehydrogenation of the nanotube matrix material formed.

Abstract: Using a scan coating method, a liquid film is formed on a substrate having a temperature distribution for correcting a temperature distribution of a liquid film caused by the heat of evaporation due to the volatilization of a solvent contained in the liquid film, and then the solvent is removed from the liquid film to form a coating film.

Abstract: Disclosed are thermal transfer elements and processes for patterning solvent-coated layers and solvent-susceptible layers onto the same receptor substrate. These donor elements and methods are particularly suited for making organic electroluminescent devices and displays. The donor elements can include a substrate, an optional light-to-heat conversion layer, and a single or multicomponent transfer layer that can be imagewise transferred to a receptor to form an organic electroluminescent device, portions thereof, or components therefor. The methods offer advantages over conventional patterning techniques such as photolithography, and make it possible to fabricate new organic electroluminescent device constructions.

Abstract: A composition for increasing the dissipation of heat from one portion of a surface when heat is applied to another portion of the same surface. The preferred composition is a gel or paste with high water content and a thickener of a mineral clay in a colloidal suspension. The invention finds particular use in welding and soldering processes which are carried out adjacent heat sensitive materials.

Abstract: A hot wire chemical vapor deposition method and apparatus for fabricating high quality amorphous, micro-crystalline, and poly-crystalline thin film silicon, or related materials, devices and large area modules is described. A silane gas impinges upon a hot graphite rod assembly whereas the gas is broken up into its individual constituents, these constituents then depositing on an inert substrate member. The distance between the hot graphite rod assembly and the substrate member is adjustable. A shutter is provided to shield the substrate member as the hot graphite rod assembly is heating up. The hot graphite rod assembly contains a plurality of mutually parallel and coplanar rods that are parallel to the plane of the substrate member, and the hot graphite rod assembly and/or the substrate is oscillated in a direction generally normal to the direction in which the rods extend.

Abstract: A composition used as a resist in the manufacture of electronic parts, for example printed circuits, and which is rendered soluble in a developer by patternwise delivery of heat, comprises a polymer of general formula (I), wherein R1 represents a hydrogen atom or alkyl group, R2 represents a hydrogen atom or alkyl group, R3 represents a hydrogen atom or alkyl group, and R4 represents hydroxyalkyl group, and wherein the ratio n/m is in the range 10/1 to 1/10.

Abstract: Disclosed are thermal transfer elements and processes for patterning solvent-coated layers and solvent-susceptible layers onto the same receptor substrate. These donor elements and methods are particularly suited for making organic electroluminescent devices and displays. The donor elements can include a substrate, an optional light-to-heat conversion layer, and a single or multicomponent transfer layer that can be imagewise transferred to a receptor to form an organic electroluminescent device, portions thereof, or components therefor. The methods offer advantages over conventional patterning techniques such as photolithography, and make it possible to fabricate new organic electroluminescent device constructions.

Abstract: Disclosed are thermal transfer elements and processes for patterning solvent-coated layers and solvent-susceptible layers onto the same receptor substrate. These donor elements and methods are particularly suited for making organic electroluminescent devices and displays. The donor elements can include a substrate, an optional light-to-heat conversion layer, and a single or multicomponent transfer layer that can be imagewise transferred to a receptor to form an organic electroluminescent device, portions thereof, or components therefor. The methods offer advantages over conventional patterning techniques such as photolithography, and make it possible to fabricate new organic electroluminescent device constructions.

Abstract: Disclosed are thermal transfer elements and processes for patterning organic materials for electronic devices onto patterned substrates. These donor elements and methods are particularly suited for making organic electroluminescent devices and displays. The donor elements can include a substrate, and optional light-to-heat conversion layer, and a single or multicomponent transfer layer that can be imagewise transferred to a receptor to form an organic electroluminescent device, portions thereof, or components therefor, The methods offer advantages over conventional patterning techniques such as photolithography, and make it possible to fabricate new organic electroluminescent device constructions.

Abstract: Disclosed are thermal transfer elements and processes for patterning organic materials for electronic devices onto patterned substrates. These donor elements and methods are particularly suited for making organic electroluminescent devices and displays. The donor elements can include a substrate, an optional light-to-heat conversion layer, and a single or multicomponent transfer layer that can be imagewise transferred to a receptor to form an organic electroluminescent device, portions thereof, or components therefor.

Abstract: A coated nanocrystal capable of light emission includes a substantially monodisperse nanoparticle selected from the group consisting of CdX, where x=S, Se, Te and an overcoating of ZnY, where Y=S, Se, uniformly deposited thereon, said coated nanoparticle characterized in that when irradiated the particles exhibit photoluminescence in a narrow spectral range of no greater than about 60 nm, and most preferably 40 nm, at full width half max (FWHM). The particle size of the nanocrystallite core is in the range of about 20 Å to about 125 Å, with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescence having quantum yields of greater than 30%.

Abstract: A carbon nanotube is contacted with a reactive substance which is a metal or a semiconductor. The reactive substance is heated to diffuse atoms of the reactive substance into the carbon nanotube so that the carbon nanotube is partially transformed or converted into carbide as a reaction product. Thus, a heterojunction of the reaction product and the carbon nanotube is formed. For example, the carbon nanotube (2) is contacted with a silicon substrate (1). The silicon substrate (1) is heated to cause solid-solid diffusion of Si. As a result, SiC (3) is formed as the heterojunction. At least a part of a filament material of a carbon nanotube is irradiated with electromagnetic wave to deform the filament material.

Abstract: A method for increasing the dissipation of heat from one portion of a surface when heat is applied to another portion of the same surface. The preferred composition is a gel or paste with high water content and a thickener of a mineral clay in a colloidal suspension. The invention finds particular use in welding and soldering processes which are carried out adjacent heat sensitive materials.

Abstract: A heating device is formed by a heating plate formed of silica and having a heating surface for heating an object to be heated, a heating element having a predetermined pattern and fixed to a surface opposing the heating surface of the heating plate, and a reflecting plate formed of silica and brought into tight contact with the surface of the heating plate on which the heating element is formed. This heating device is arranged in a processing vessel in a CVD apparatus, and a semiconductor wafer is placed on the heating device. A process gas is supplied into the processing vessel while the semiconductor wafer is heated, thereby forming a predetermined film on the semiconductor wafer.

Abstract: The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Copper Iodide.

Abstract: A method for forming a desired pattern of a material of conductive or non-conductive type on a variety of substrates. It is based on the use of a pen which essentially consists of a refractory tip wetted with the material in the molten state. The pen preferably consists of a pointed tungsten tip attached to the top of a V-shaped tungsten heater, forming a heater assembly. The tip and the heater top portion are roughened at the vicinity of the welding point. In turn, the ends of the V-shaped heater are welded to the pins of a 3-lead TO-5 package base. The pen is incorporated in an apparatus adapted to the direct writing technique. To that end, the pen is attached to a supporting device capable of movements in the X, Y and Z directions, while the substrate is placed on an X-Y stage for adequate X, Y and Z relative movements therebetween. The two pins of the pen are connected to a power supply to resistively heat the heater.

Abstract: In order to improve a process and an apparatus for producing a functional structure of a semiconductor component, which comprises layers arranged on a base substrate and defining the entire functions of the semiconductor component, such that the functional structure of the semiconductor components can be produced as simply as possible and with as little susceptibility as possible with respect to the quality of the semiconductor components it is suggested that all the layers be produced without lithography and applied to the base substrate one after the other exclusively with physical layer application processes.