Abstract: A vapor deposition process for the preparation of a chemical compound, wherein the process comprises providing each component element of the chemical compound as a vapor, and co-depositing the component element vapors on a common substrate, wherein: the vapor of at least one component element is provided using a cracking source; the vapor of at least one other component element is provided using a plasma source; and at least one further component element vapor is provided; wherein the component elements react on the substrate to form the chemical compound.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: The invention relates to a process for depositing an anti-fouling top coat onto the outermost coating layer of a coated optical article, comprising the following steps: a) providing an optical article having two main faces, at least one of which being coated with an outermost layer; b) treating said outermost layer with energetic species resulting in surface physical attack and/or chemical modification; and c) vacuum evaporating a liquid coating material for an anti-fouling top coat by means of an evaporation device, resulting in the deposition of the evaporated coating material onto the treated outermost layer of the optical article, wherein prior to the vacuum evaporation step of the liquid coating material, said liquid coating material has been treated with energetic species.

Abstract: A joule-heating evaporation deposition apparatus which deposits a layer on a target substrate, the apparatus including: a base substrate facing the target substrate including a plurality of target areas defined thereon; a plurality of heating electrodes on the base substrate; and a deposition material on the plurality of heating electrodes and an entire surface of the base substrate. Plural heating electrodes among the plurality of heating electrodes respectively face each target area among the plurality of target areas.

Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract: A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

Abstract: A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.

Abstract: Provided is a method of producing an aluminum structure using a porous resin molded body having a three-dimensional network structure, with which it is possible to form an aluminum structure having a low oxide content in the surface of aluminum (i.e., having an oxide film with a small thickness), and in particular, it is possible to obtain an aluminum porous body that has a large area. The method includes a step of preparing an aluminum-coated resin molded body in which an aluminum layer is formed, directly or with another layer therebetween, on a surface of a resin molded body composed of urethane, and a step of decomposing the resin molded body by bringing the aluminum-coated resin molded body into contact with concentrated nitric acid with a concentration of 62% or more.

Abstract: A batch vapor deposition process for applying adhesion promoter during manufacturing of nanoimprinted discrete track media and bit-patterned media, and mono-molecular layer lubricant on magnetic recording media are disclosed. The adhesion promoter is simultaneously coated on both sides of numerous disk substrates, and minimal solution is wasted. In another step, the lubricant is applied at a uniform thickness that is on the order of a single molecular layer. The lubricant is also applied on the entire disk surfaces while processing multiple disks at a time. Batch processing increases throughput, and vapor lubricant reduces costs compared to conventional techniques. Limited air exposure controls bonding and monolayer adsorption guarantees uniformity.

Abstract: A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.

Abstract: Aspects of the present disclosure include methods for making an electrode for an electrochemical sensor. In practicing methods according to certain embodiments, a conductive layer is deposited on a substrate by high voltage electron beam thermal evaporation followed by depositing a reactive layer on a surface of the conductive layer by low-voltage resistive thermal evaporation using a sequential step, single production chamber. Also provided are methods for a producing a multi-layered reference electrode having silver or ITO and silver chloride thereon in the absence of a separate curing stage. Systems for practicing the subject methods are also described.

Abstract: The process for producing polycrystalline silicon by feeding a reaction gas containing a silane gas and a hydrogen gas into a reaction vessel equipped with silicon core members erected on the electrodes, heating the silicon core members by flowing an electric current thereto to a temperature at which silicon deposits, forming polycrystalline silicon rods by allowing the formed silicon to deposit on the silicon core members, and discharging the discharge gas after the reaction from the reaction vessel, wherein the discharge gas discharged from the reaction vessel is quenched so that the temperature thereof drops from 800° C. down to 500° C. in not longer than 0.1 second.

Abstract: In-situ flux measurement methods, devices, and systems are provided. According to some embodiments, an in-situ molecular flux device generally comprises a electrically conductive container configured to hold a precursor material, a heat source proximate the electrically conductive container to heat the precursor material to release ions such that an ion current is produced; and a current-measuring device in electrical communication with the electrically conductive container to measure the ion current associated with the heated precursor material. Other embodiments are also claimed and described.

Abstract: To improve the use efficiency of a vapor-deposition material, reduce the manufacturing cost of a light-emitting device including a layer containing an organic compound, and shorten the manufacturing time for manufacturing a light-emitting device. Inside of a film formation chamber is made in a reduced pressure state, and conductive-surface substrate is energized, so that the conductive-surface substrate is heated rapidly, and a material layer over the conductive-surface substrate is evaporated in a short period of time to be vapor-deposited on a film formation substrate, whereby film formation of the material layer is performed on the film formation substrate. Note that the heating area of the conductive-surface substrate which is rapidly heated is set to be the same size as the film formation substrate so that film formation on one film formation substrate is completed by one heating.

Abstract: A thin film solid state battery configured with barrier regions formed on a flexible substrate member and method. The method includes forming a bottom thin film barrier material overlying and directly contacting a surface region of a substrate. A first current collector region can be formed overlying the bottom barrier material and forming a first cathode material overlying the first current collector region. A first electrolyte can be formed overlying the first cathode material, and a second current collector region can be formed overlying the first anode material. The method also includes forming an intermediary thin film barrier material overlying the second current collector region and forming a top thin film barrier material overlying the second electrochemical cell. The solid state battery can comprise the elements described in the method of fabrication.

Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

Abstract: A process for combining a polythiol reactant and an alkenyl silane reactant to form a polysulfide polysilane. The reactants are combined in a thiol-ene addition process driven by UV radiation. The polysulfide polysilane is then hydrolyzed and may be combined with other hydrolyzed compounds. For coatings, the polysulfide polysilane is hydrolyzed and may optionally be combined with nanoparticles. For bulk materials, the polysulfide polysilane is hydrolyzed, concentrated, and heated to form a high refractive index material which can be used to form optical articles such as lenses.

Abstract: [Problems] To provide a polycrystalline silicon rod used for the recharging in the FZ method or the CZ method, the straight body portions thereof assuming an easily transferable shape and excelling in transferability. [Means for Solution] The polycrystalline silicon rod is obtained by depositing and growing silicon, by the chemical vapor-phase deposition method, on a silicon core member which includes a pair of silicon rods erected on the electrodes and a bridging portion connecting the upper ends of the silicon rods, wherein the straight body portions of the silicon rod erected on the electrodes have a diameter profile in the lengthwise direction thereof, and a minimum diameter is adjusted to be 60 to 95% of a maximum diameter.

Abstract: [Problem] To provide a process for producing polycrystalline silicon, which is capable of effectively preventing the formation of phosphorus-silicon compounds in the discharge gas discharged from the reaction vessel, and makes it possible to reuse a silane compound contained in the discharge gas. [Means for Solution] The process for producing polycrystalline silicon by feeding a reaction gas containing a silane gas and a hydrogen gas into a reaction vessel equipped with silicon core members erected on the electrodes, heating the silicon core members by flowing an electric current thereto to a temperature at which silicon deposits, forming polycrystalline silicon rods by allowing the formed silicon to deposit on the silicon core members, and discharging the discharge gas after the reaction from the reaction vessel, wherein the discharge gas discharged from the reaction vessel is quenched so that the temperature thereof drops from 800° C. down to 500° C. in not longer than 0.1 second.

Abstract: The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones, wherein the innermost zone (B) projects from the zone (A) at the top and has a lower specific thermal conductivity than zone (A).

Abstract: A method for CVD processing, comprises the steps of: fixing both ends of a silicon substrate to a pair of electrode mounts; lowering a resistance value of the silicon substrate by raising temperature of the silicon substrate with heat from an outer heater provided outside the case; heating the silicon substrate to a temperature at which the CVD process can be started by applying electrical current, and lowering an atmosphere temperature in the CVD space by stopping the outer heater; and forming a thin film on a surface of the silicon substrate by injecting source gas into the CVD space, when the silicon substrate is heated to the temperature at which the CVD process can be started and the atmosphere temperature in the CVD space is lowered to a predetermined temperature.

Abstract: A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10?5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.

Abstract: An apparatus for levitation of an amount of conductive material including a coil for keeping the material in levitation using a varying electric current in the coil. The apparatus has two coils, a first coil and a second coil, both coils generating an alternating electromagnetic field during use, the alternating electric field of the first and the second coil counteracting each other. The first and second coils are positioned such that the conductive material kept in levitation between the first coil and the second coil is evaporated. A method for generating an amount of levitated conductive material is also disclosed.

Abstract: A reaction chamber system, and related devices and methods for use in the system, are provided in which reduced power consumption can be achieved by providing a thin layer of gold on one or more components inside a reaction chamber. The reaction chamber system can be used for chemical vapor deposition. The gold coating should be maintained to a thickness of at least about 0.1 microns, and more preferably about 0.5 to 3.0 microns, to provide a suitable emissivity inside the reaction chamber, and thus reduce heat losses.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.

Abstract: A composition having a polythiol reactant and an alkenyl silane reactant which are combined to form a polysulfide polysilane. In the process, the reactants are combined in a thiol-ene addition process driven by UV radiation. The polysulfide polysilane is then hydrolyzed and may be combined with other hydrolyzed compounds. For coatings, the polysulfide polysilane is hydrolyzed and may optionally be combined with nanoparticles. For bulk materials, the polysulfide polysilane is hydrolyzed, concentrated and heated to form a high refractive index material which can be used to form lenses.

Abstract: A method for evaporating a plurality of purified organic materials in a thermal physical vapor deposition system, comprising the steps of: mixing predetermined amounts of first and second organic materials to form a mixture of materials at a predetermined ratio; processing at least one of the organic materials at less than the sublimation temperature of the at least one of the organic materials before or after mixing to remove a first contaminant, wherein if processing is after mixing, the processing temperature is lower than the sublimation temperature of each of the organic materials; providing a thermal physical vapor deposition source; transferring the purified mixture of organic materials into the thermal physical vapor deposition source while maintaining the purified mixture of organic materials in a controlled, contaminant-free environment; and using the source to evaporate the purified mixture of organic materials.

Abstract: A canister apparatus for supplying a precursor material is disclosed. The canister apparatus includes a container defining an interior volume adapted to confine a precursor material, a tubular member adapted to introduce a carrier gas into the container, wherein the tubular member includes a distal end, and perforated portion spaced apart from the distal end that includes a plurality of radial holes, and an outlet adapted to flow out the precursor material and the carrier gas.

Abstract: A process for the evaporation of a high-melting material in an evaporator cell having a crucible for receiving the material to be evaporated, and a heating device with a heating resistor for the resistance heating of the crucible, the heating resistor being provided as an electron emitter for the electron beam heating of the crucible.

Abstract: The invention relates to an object, in particular a security element for security papers, bank notes, identity card or the like, as well as a security paper and a document of value with such a security element. Furthermore, the invention relates to a method for producing the object, in particular the security element or the security paper and the document of value with such a security element. The method in particular serves for manufacturing a precious-metal-coloured, preferably gold-coloured coating on a substrate.

Abstract: A physical vapor deposition method for the deposition of thioaluminate phosphor compositions includes providing one or more source materials including an intermetallic barium aluminum compound, a barium aluminum alloy or a protected barium metal, providing an activator species and effecting deposition of the one or more source materials and activator species as a phosphor composition on a selected substrate. The method allows for the deposition of blue thin film electroluminescent phosphors with high luminance and colors required for TV applications.

Abstract: Reactors having isolated gas connectors, systems that include such reactors, and methods for depositing materials onto micro-devices workpieces are disclosed herein. In one embodiment, a reactor for depositing material onto a micro-device workpiece includes a reaction chamber, a lid attachable to the reaction chamber, and a connector. The connector has a first portion coupled to the lid, a second portion coupled to the reaction chamber, a gas passageway extending through the first and second portions, and a seal. The seal can surround the gas passageway between the first and second portions. The first portion is detachably coupled to the second portion. In one aspect of this embodiment, the connector can also include a second gas passageway extending through the first and second portions and a second seal surrounding the second gas passageway between the first and second portions.

Abstract: Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.

Abstract: A method of coating by vapor deposition including heating a material-heating cell provided in a chamber and having a nozzle part at its one end, for holding a solid material, supplying a fluid from the other end side of the chamber toward the nozzle part of the chamber to guide the material vaporized from the heated material-heating cell to the nozzle part to discharge the material from the nozzle part, and blowing a gas for controlling a vapor-deposition material straight movement, outside the nozzle part of the chamber toward the tip of the nozzle part to control the material discharged from the nozzle part so that the material can move straight ahead.

Abstract: In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract: A reactor for preparing carbon nanotubes comprising a reaction chamber, at least one support means located within said reaction chamber capable of supporting a substrate, said substrate being capable of supporting carbon nanotube growth, at least one heating element located within said reaction chamber capable of providing localized heating to said substrate within said reaction chamber, and means for passing a gaseous carbonaceous material into said reaction chamber such that is passes over the contacts said substrate.

Abstract: A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.

Abstract: An information recording medium that is excellent in repeated-rewriting performance and is deteriorated less in crystallization sensitivity with time is provided, with respect to which high density recording can be carried out. A method of manufacturing the same also is provided. The information recording medium includes a substrate and a recording layer disposed above the substrate. The recording layer contains, as constituent elements, Ge, Sb, Te, Sn, and at least one element M selected from Ag, Al, Cr, Mn, and N and is transformed in phase reversibly between a crystal phase and an amorphous phase by an irradiation of an energy beam.

Abstract: Disclosed is a method of forming a high-temperature corrosion-resistant film, which comprises placing a container containing a film-forming fine powder and a target member capable of being heated by an electric current heating process, in an atmosphere-controllable treatment chamber, and floating the fine powder and subjecting the target member to the electric current heating process to allow vapor of the fine powder generated by the heating to be diffused into the target member from a surface thereof so as to form a diffusion film layer, and allow the floated fine powder to be attached onto the surface so as to form a fine-powder film layer on the diffusion film layer. The target member may be masked to form the film only in a non-masked region of the target member. Alternatively, a specific region of the target member may be cooled at a temperature precluding the film formation to prevent the film from being formed in the specific region.

Abstract: The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed below the ET layer in the active matrix light-emitting device. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, little damage was observed on the EL layer, but significant damages were found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT.

Abstract: A ceramic heater for heating a semiconductor wafer under processing and has a layered structure wherein on one surface of a supporting substrate made of carbon or a carbon-based composite material, successively formed layers including an insulating layer, and electroconductive layer as an electric heating element and a dielectric layer. A first step for partly or completely removing the layer or layers having degraded properties by means of a suitable method such as sandblasting and a second step of re-forming the layer or layers having been removed in the first step. The invention allows for a substantial cost decrease as compared with the conventional way by replacing the worn-out ceramic heater with a newly manufactured one.

Abstract: The invention relates to a method for coating a substrate with a layer of a material, such as a metal, in which a quantity of electrically conductive material is vaporized in a space with a low background pressure and energy is supplied to the material which is to be vaporized in order to vaporize this material. According to the invention, the material which is to be vaporized, while it is being vaporized, is kept floating, without support, in the space and is enclosed in an alternating electromagnetic field, the alternating electromagnetic field being generated with the aid of a high-frequency alternating current. The invention also relates to a device for coating a substrate and to a substrate.

Abstract: A radiation image storage panel composed at least of a phosphor layer containing energy-storable phosphor particles and a light-reflecting layer provided on one side of the phosphor layer, in which the energy-storable phosphor particles are composed of at least two kinds of particles having different mean sizes, one of which is composed of smaller particles having a mean size of 2.0 to 4.0 ?m and the other of which is composed of larger particles having a mean size of 6.0 to 15 ?m, and a weight ratio between the smaller particles and the larger particles is in the range of 10:90 to 50:50 (former:latter), and in which the light-reflecting layer gives a scattering length of 5 ?m or less (the scattering length is for a stimulating light).

Abstract: Conducting polymers having improved optical properties, and a method of manufacturing the conducting polymers, are disclosed. The conducting polymers are prepared by a process wherein organic ions and neutral oligomers are deposited simultaneously on a substrate surface to provide a conducting polymer film.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

Abstract: A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) ?/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) ?/second for the a-SiGe:H intrinsic layer.

Abstract: A series of noble metal organometallic complexes of the general formula (I): MLaXb(FBC)c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide.