Abstract: In producing a thin-film electroluminescent device having a ZnS:Mn film deposited by a MOCVD process using a mixed gas containing an organic zinc compound, an organic sulfur compound and an organic manganese compound, either methyl mercaptan or ethyl mercaptan is used as the sulfur compound and di.pi.-cyclopentadienylmanganese as the manganese compound. The zinc compound is preferably dimethylzinc or diethylzinc. As the merits of using such a combination of organic metal compounds the MOCVD operation can be accomplished at a relatively low substrate temperature, and the deposited ZnS:Mn film is high in the light emitting efficiency and low in the threshold voltage.

Abstract: The present invention is directed towards the production of a single crystal semiconductor device mounted in intimate contact with a polycrystalline CVD diamond substrate which allows the high heat conductivity of diamond to keep the device cool. This device is made by a method comprising the steps of placing in a reaction chamber, a single crystal of silicon heated to an elevated CVD diamond-forming temperature. A hydrocarbon/hydrogen gaseous mixture is provided within the chamber and is at least partially decomposed to form a polycrystalline CVD diamond layer on said silicon. During the deposition/growth phase, an intermediate layer of single crystal SiC has been found to form between the single crystal of silicon and the polycrystalline CVD diamond layer. In the next step of the process, the silicon is etched or removed to reveal the single crystal SiC supported by the polycrystalline CVD diamond layer. Finally, a semiconductor layer (e.g.

Abstract: In a vacuum evaporation method for depositing a thin film on a substrate by heating a sublimable source material under vacuum to vaporize it, the source material is subjectd to vaporization in an unsintered state. Electron-beam heating may be employed. The primary advantage of avoiding precedent sintering of the source material is great reduction in scattering of fine particles of the source material in the vacuum chamber. Consequently the deposited film has an even and smooth surface. A representative of the sublimable source material is a II-VI compound semiconductor such as ZnS used as the host material of an electroluminescent phosphor. Thin-film electroluminsecent devices produced by using the vacuum evaporation method according to the invention possess improved reliability.

Abstract: A system is disclosed which will improve the flashover strength of high-voltage insulators in vacuum. Treatments which deposit a small amount of metal on an insulator surface can improve flashover performance. This process applies commercial ion-implantation techniques to achieve a quasi-metalized surface on a vacuum insulator. By making the metal a part of the structure of the insulator near the surface, the ion-bombardment process yields a surface which has the same electrical properties as a metalized surface achieved by other methods, with the additional advantage of mechanical and electrical ruggedness.

Abstract: In an optical recording medium, for an audio-video or ROM compact disc comprising a pitted translucent base material and a layer (9) of a corrosion resistant metal or combination of metals from the groups 4N, 5N, 7N or 8N of the periodic table of elements is disclosed. For example NiCr can Be Applied onto the surface having the pits (7), thereby providing good adhesion, reflecting light and providing printable surface and not requiring any further coating such as a protective lacquer. Also, in the event that a gold-colored glossy layer is necessary, a CuBe layer can be sputtered onto the substrate (8).

Abstract: A fluorescent lamp containing a Y.sub.2 O.sub.3 or Al.sub.2 O.sub.3 coating on a layer of yttrium vanadate phosphor and a method of coating the layer of the yttrium vanadate phosphor with a continuous protective coating of Y.sub.2 O.sub.3 or Al.sub.2 O.sub.3 is described. The method comprises applying a coating of a metal, such as yttrium or aluminum, on the yttrium vanadate phosphor then lehring the metallic coating at about 500.degree. C. to about 625.degree. C. to form a continuous protective coating of Y.sub.2 O.sub.3 or Al.sub.2 O.sub.3 overlaying the layer of phosphor.

Abstract: The use of a highly stable, lattice-matched barrier layer grown epitaxially on a suitable substrate, and permitting the subsequent epitaxial growth of a thin high-temperature superconducting film with optimized properties.

Abstract: An article, having particular use as a scintillator, includes a thin film of calcium sulfide on a substrate, such as alumina, quartz, sapphire, or most glasses. The material is first formed in bulk with cerium sulfide, cerium oxide, or cerium, and lithium fluoride. The material is applied by physical vapor deposition in a relatively thin film to the substrate, and then at least the luminescent material is subjected to a high temperature for a period of time to effect recrystallization and activation of the material, such that the material acquires luminescent characteristics.

Abstract: An article, having particular use as an optical memory medium, includes a thin electron trapping photoluminescent film upon a substrate. In one preferred embodiment, a selected material is prepared in bulk, then applied in a relatively thin film to a substrate, and then heated to a sufficient temperature for a sufficient period of time such that the selected material acquires electron trapping characteristics and becomes photoluminescent. Some preferred methods of depositing the material are electron-beam deposition and sputtering. Some preferred methods of heating the material include photo crystallization and laser crystallization.

Abstract: A system for analyzing an aluminum deposition process to form a coating on a surface of a CRT faceplate panel disposed on an exhaust cart includes: an apparatus within the exhaust cart for controlling the distribution of the aluminum; a sensor disposed on the panel for determining whether aluminum was deposited thereon, and a plurality of thickness monitors disposed on the panel for generating a plurality of signals representative of the relative thickness of the aluminum coating at a plurality of locations on the surface thereof. The signals are converted into data values to indicate whether the aluminum coating achieves a predetermined thickness profile.A method of depositing the aluminum coating is also disclosed. The method provides an indication of the performance of each of the exhaust carts and permits the categorization of defects for the panels not meeting the predetermined thickness profile.

Abstract: Disclosed are optically transmissive conductors, particulary resistive electrodes for optical devices such as electroluminescent lamps and displays, comprising a thin layer of indium tin oxide (ITO) stabilized by a layer of a metal oxide, such as palladium oxide or nickel oxide. In the disclosed method, a thin layer of conductive ITO is coated with a metal layer and then oxidized by heating in air to 500.degree. C.

Abstract: An electroluminescent device comprising an electroluminescent layer capable of emitting light under application of AC voltage, the electroluminescent layer comprising strontium sulfide as a matrix and containing at least one of halides and sulfides of cerium, europium, thulium, terbium and samarium, and having a lattice constant of not more than 6.04 .ANG. and a half-width value at the (111) face of not more than 0.21 degree has a higher brightness than an electroluminescent device having an electroluminescent layer comprising ZnS as a matrix.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

Abstract: Vapor deposition crucible is provided at least twenty degrees from the central normal to a smooth surface of a screen on which luminescent material is to be deposited. During deposition the surface is rotated relative to the source to produce a layer having a regular structure and a good fill factor.

Abstract: A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.

Abstract: Photoluminescent materials useful for detection of infrared light are constructed using a base material of strontium sulfide. Barium sulfate is used to increase brightness of output light of the materials, whereas lithium floride is used to allow the material to be fused together. Samarium and either cerium oxide or europium oxide are used in specific examples for providing electron traps in the photoluminescent material. An infrared sensing device or card may be constructed using the material. The photoluminescent material is made according to a process involving heating of the material to a fusing point, grinding the material after cooling, and reheating the material to below the fusing temperature. The material is then placed in a transparent binder and applied to a substrate. An alternate process involves applying the components of the photoluminescent material to a substrate of aluminum oxide and fusing the components onto the substrate.

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.

Abstract: A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.

Abstract: A method for preventing aluminum corrosion in electronic parts which comprises adding lead hydroxy apatite and/or cadmium hydroxy apatite to constituents of the electronic parts through which halogen ions pass, so that said ions may be captured by said apatites in said constituents.

Abstract: Disclosed are electroluminescent devices employing a stabilized tantalum sub-oxide as a dielectric. The tantalum sub-oxide is a non-stoichiometric oxide of the general form Ta.sub.2 O.sub.m, where 4.5<m<5.0, stabilized by bonds with suitable anions such as OH. In a disclosed method, a layer of tantalum sub-oxide is deposited to a thickness of from 3000 to 4000 angstroms. More particularly, a source mixture of tantalum metal and tantalum pentoxide is provided, vaporized by electron beam evaporation, and allowed to condense on a surface. The layer of tantalum sub-oxide is exposed to anions for completing a stable oxide network. Preferably, the anions are OH radicals, and the bonds are formed by exposing the layer to a humid atmosphere. The thus-stabilized layer is reheated to remove any water.

Abstract: A thin-film electroluminescent (EL) display panel comprises a thin-film EL layer, first and second dielectric layers, the thin-film EL layer being disposed between the dielectric layers, first and second metal oxide layers, and first and second electrodes, the first and second metal oxide layers being disposed respectively between the first and second dielectric layers, and the first and second electrodes. Preferably, at least one of the first and second metal oxide layers is made of Al.sub.2 O.sub.3, SiO.sub.2 or the like with a thickness of about 100-800.ANG. and at least one of the dielectric layers being about 1000-3000.ANG..

Abstract: In an electroluminescent panel which in turn comprises a transparent electrode member on a transparent substrate, a first dielectric layer, an electroluminescent layer, a second dielectric layer, and a back electrode member, at least one of the first and the second dielectric layers is divided into first and second partial dielectric films nearer to and farther from the transparent electrode member, respectively. The first partial dielectric film is deposited in a nonoxidization atmosphere by the use of a pellet which essentially consists of silicon and oxygen. Thereafter, the second partial dielectric film is deposited on the first partial dielectric film in an oxygen atmosphere and has a relative dielectric constant greater than the first partial dielectric film. Alternatively, each of the first and the second dielectric layers may comprise the first partial dielectric film of silicon and oxide and the second partial dielectric film mentioned above.

Abstract: The present invention provides a means of relieving stress on an apertured mask, typically used to deposit thin-film structures on a glass substrate, such that the mask easily conforms to the substrate surface when the mask is in its hold down and patterning position during the deposition process. In particular, the present invention provides a mask assembly having a structurally relieved inner apertured mask portion from an outer mask portion that serves to eliminate wrinkles or crimps in the mask during deposition which may produce unacceptable blurs or shorts between thin-film structures. The stress relieving feature includes a slot which is disposed peripherally about the inner mask and two small segments providing the interconnection between the inner and outer mask of the mask assembly.

Abstract: A process of forming improved ohmic contacts is disclosed. Substrates having contact openings formed in a dielectric layer thereon are cleaned under vacuum with HF/H.sub.2 O vapor wherein the temperature of the vapor is at least about 5.degree. C. lower than that of the substrate. The cleaned substrates are then metallized in-situ in a closed system, e.g. by magnetron sputtering, thus preventing air from contacting the substrate. The cleaning and metallization each require about one minute, thus making the process suitable for efficient, large-scale operation.

Abstract: An input phosphor screen includes a substrate having a substantially smooth surface, and first and second phosphor layers both vapor-deposited sequentially on the substrate. The first layer is made of phosphor crystal particles having a mean diameter of 15 .mu.m or less. The second layer has a thickness ten or more times that of the first layer and is made of individual columnar crystals of alkali halide grown vertically on the crystal particles, standing close together with fine spaces therebetween. A third layer is preferably deposited on the second layer as a continuous film. These three layers can be deposited by evaporating a phosphor material or materials at a prescribed temperature and at a predetermined degree of vacuum.

Abstract: A thin flexible steel mask is provided for use in vacuum depositing high resolution back metal electrodes on the surface of a glass substrate already having deposited thereon front transparent electrodes and a thin-film structure including an electroluminescent layer sandwiched between layers of a dielectric.The spaced filaments provided on the mask for defining the openings through which the metal electrodes are deposited are joined together along the lengths thereof by reinforcing portions which provide for rigidly holding the filaments in the plane of the mask and enable a permanent magnet to retain the filaments of the mask in position flush against the surface of the substrate. After the metal has been deposited a first time through the openings in the mask, the mask is repositioned on the substrate such that the reinforcing portions now lie over the areas already deposited on and uncover the portions of the substrate that have yet to be deposited on.

Abstract: A quartz crystal oscillator including a quartz crystal plate defining a tuning fork having a base, two vibratory tines extending from the base and a frame integrally extending from the base and surrounding the tines is provided. The quartz crystal plate is disposed between two cooperating case members in the region of the base and frame. Thin metallic electrodes are disposed on the opposed planar surfaces of the quartz crystal plate. A through-hole or opening is formed in the base region of the vibrator plate for electrically connecting an electrode from one planar surface of the plate to the opposed planar surface for providing two external terminals on one surface case member. The electrical connection through the through-hole or opening is a thin metal film disposed by sputtering or deposition.

Abstract: A process is provided for forming a self-supporting semiconductor film or ribbon. A TESS substrate is prepared from a substrate of refractory material having an expansion coefficient different from the expansion coefficient of the semiconductor material. A colloidal suspension of graphite is applied to the substrate to form a thin layer of loosely adherent graphite particles. Over this layer of graphite is deposited a layer of the semiconductor material, the deposition occurring at an elevated temperature. Upon cooling from the deposition temperature, the differential thermal expansion coefficience causes the shearing at the graphite layer and therefore provides for the easy removal of the semiconductor layer from the substrate.

Abstract: A method for coating a selected portion of the internal surface of the neck of a CRT having a beaded electron-gun mount assembly housed therein. The method comprises providing in the neck at least one source of chromium metal spaced from and within line-of-sight of at least a portion of the neck surface opposite each bead. The CRT is evacuated to a low gas pressure and then chromium metal vapor is released from each source towards the neck surface, whereby chromium metal deposits on the neck surface.

Abstract: In a method of manufacturing a color picture tube of the type comprising the steps of coating phosphors of three primary colors on the inner surface of the face plate of the color picture tube to form dots or stripes of the phosphors, applying an acrylic resin emulsion on the dots or stripes of the phosphors to form an acrylic resin film, vapor depositing metal onto the film to form a metallic reflecting film, subjecting the acrylic resin film to a pyrolysis for decomposing it into gases, and removing the gases, the acrylic resin emulsion comprises a plurality of emulsions respectively containing conventional acrylic resin and normal butyl methacrylate resin. The normal butyl methacrylate resin is mixed with the conventional acrylic resin at a ratio of 5 to 40% by weight.

Abstract: An absorbing coating consisting of three layers sequentially deposited on e aluminized phosphor screen of an electro-optical device such as an image intensifier. The layers are: a transparent dielectric layer with a thickness of about one quarter wavelength of radiation to be absorbed, a thin metal semitransparent layer, and an aluminum oxide protective layer for the thin metal layer. The coating is transparent to electrons bombarding the phosphor, but absorbs radiation which might pass through the photocathode and be reflected from the phosphor aluminum coating back to the photocathode. Such reflected radiation can cause spurious output electrons from the photocathode.

Abstract: A cathode ray tube is described having a high brightness, high resolution cathodoluminescence screen which exhibits a low noise level. Two discrete phosphor layers are provided on the interior of the tube faceplate. A thin electrophoretically deposited first phosphor layer of very finely divided phosphor is disposed upon the interior surface of the tube faceplate. A second gravity settle phosphor layer is disposed over the first phosphor layer.

Abstract: The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium arsenide substrate, and the deposition of a layer of germanium establishes a second PN junction in Ge of a different bandgap energy on the other side of the GaAs substrate. The two PN junctions are responsive respectively to different wavelength ranges of solar energy to thus enhance the power output capability of a single wafer (substrate) solar cell. Utilization of the Group IV element germanium, as contrasted to compound semiconductors, simplifies the process control requirements relative to known prior art compound semiconductor processes, and germanium also provides a good crystal lattice match with gallium arsenide and thereby maximizes process yields.

Abstract: An improved electroluminescent display panel having an X-Y array of display elements upon a planar insulating substrate. Integral thin film transistor circuit elements and drive signal buses are interconnected on the panel with individual electroluminescent electrodes covering a large area of the panel to increase the active display area. The electroluminescent electrode is a multilevel electrode with a first level portion disposed on the insulated substrate, a second level electrode portion disposed over an insulative polymerized layer which covers the thin film circuit areas and the drive signal buses, and a connecting electrode portion which extends between the first and second level electrode portions.

Abstract: In a process for producing a color television picture tube which comprises at least the step of coating phosphor slurries onto the inner surface of a panel to form a phosphor layer, the step of forming two layers each consisting of an aqueous filming emulsion containing an acrylic resin, the step of forming a metal film on the second layer, and the step of baking out the organic substances, a color television picture tube having a metal film which contains a few pores and cracks and no blister can be produced by using said phosphor slurries containing an acrylic resin and using the first aqueous filming emulsion containing an acrylic resin having an elongation of 10% or more and using the second aqueous filming emulsion containing an acrylic resin having an elongation of less than 10%.

Abstract: A large area integrated solid-state flat panel display is detailed in which thin film transistor addressing and drive circuitry is provided at each individual picture point with a display medium. The preferred display medium is an electroluminescent phosphor layer. An insulating layer of laminated photoresist is disposed over all electrical circuit elements except the electroluminescent drive electrodes.

Abstract: In a process for the production of color television picture tubes which comprises at least the step of forming a phosphor layer on the inner surface of a panel, the step of coating said inner surface of the panel including said phosphor layer with an aqueous emulsion of a water-insoluble film-forming resin to form a volatilizable substrate layer, the step of forming a metal film on the substrate layer and the step of volatilizing the organic substances, a color television picture tube in which the blister or separation of the metal film can be prevented in said volatilization step and the undecomposed resin does not remain and which has an improved brightness can be produced by forming said substrate layer from at least two layers each of an emulsion, adding colloidal silica, an aqueous ammonium oxalate solution and aqueous hydrogen peroxide to the first layer emulsion, and adding polyvinyl alcohol-boric acid complex and a small amount of ammonium hydroxide to the emulsion of the layer contacting directly wit

Abstract: A method for metallizing a phosphor screen for a cathode ray tube including the steps of forming a volatilizable substrate on the surface of the phosphor screen and depositing a metal layer on the substrate, followed by heating for volatilizing the substrate, said substrate comprising a laminate of superposed layers respectively representing different organic materials having different thermal decomposition points. This disclosed method is advantageous in that the substrate can be volatilized without causing blistering of the metal layer and the formed metal layer is enabled to reflect light more effectively.

Abstract: A process for producing a thin fluorescent film for electroluminescence includes the steps of heating a raw material, composed of a base material and an activator, within an enclosed type crucible so as to generate a mixed vapor, injecting the mixed vapor into a vacuum zone through means of an injection nozzle, projecting an electron beam into the injected mixed vapor so as to ionize the mixed vapor, accelerating the ionized mixed vapor by means of an electric field, and permitting the accelerated ionized mixed vapor to collide with a base plate so as to form a vapor-deposited film upon the base plate.

Abstract: A phosphor screen for converting x-rays to light includes a large number of discrete columns of the phosphor material, say doped CsI, with the spaces therebetween preferably filled with a reflective substance, which itself may be phosphor (e.g., Gd.sub.2 O.sub.2 S or La.sub.2 O.sub.2 S). Because of the resulting inhibition of lateral spread of light within the phosphor screen, it may be made thicker than conventional screens while achieving at least as high resolution and contrast, thereby increasing brightness (and thus requiring lower x-ray "doses"). A method for making the screen includes using a patterned substrate and wide-angle vapor deposition (as in a hot-wall evaporator) so as to deposit the phosphor only on the raised portions of the substrate.

Abstract: A method of metallizing a screen with a luminescent layer. The method comprises the following steps: providing a film that can be fired. Blasting parts of the film projecting beyond the luminescent layer with a fine-granular material, metallizing the film, firing the film. The said blasting prevents blisters and chips from forming in the metallization.

Abstract: The invention relates to a method of aluminizing the inside of the panel of a television picture tube. When aluminizing the inside of the panel, blisters caused by the vaporizing lacquer, are likely to develop in the layer of aluminum, especially on the side walls of the panel portion. When taking care in accordance with the invention, that the coat of lacquer is roughened prior to the performance of the aluminizing process, these blisters are avoided.

Abstract: A glass body having a fluorescent pattern inwardly of a surface thereof is formed by depositing a first material in a predetermined pattern on a surface of glass containing readily ion-exchangeable first ions, the first material containing second ions capable of ion-exchange with the first ions, one of the glass and the first material containing ions for providing a fluorescence center, and by causing the second ions to penetrate into the glass through ion-exchange with the first ions so that the fluorescence-center providing ions may be distributed in a pattern which is in positive or negative relationship with the predetermined pattern.

Abstract: The invention relates to a method of aluminizing the inside of the panel of a television picture tube. When aluminizing the inside of the panel, blisters caused by the vaporizing lacquer, are likely to develop in the layer of aluminum, especially on the side walls of the panel portion. When taking care in accordance with the invention, that the coat of lacquer is roughened prior to the performance of the aluminizing process, these blisters are avoided.