Abstract: A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

Abstract: A photovoltaic device may be provided. The photovoltaic device may include a first energy absorbing surface and a second energy absorbing surface being substantially parallel to the first energy absorbing surface. The photovoltaic device may include a third energy absorbing surface being substantially perpendicular to the first energy absorbing surface and the second energy absorbing surface. Each of the first energy absorbing surface, the second energy absorbing surface, and the third energy absorbing surface may be configured to convert energy from photons into electrical energy. The photons may be impringing one or more of the first energy absorbing surface, the second energy absorbing surface, and the third energy absorbing surface. The first, second, and third energy absorbing surface may be oriented in manner to cause the photons to bounce between two or more of the first energy absorbing surface, the second energy absorbing surface, and the third energy absorbing surface.

Abstract: A method of making thermodynamically stable, diffusion-impeded barrier layers within, for example, a photovoltaic cell with a metal-containing electrical contact using exposure to fluorine. Exposing the cadmium telluride surface to fluorine creates a Te-poor barrier layer of cadmium fluoride. Once that barrier layer is formed, the metal-containing electrical contact may be applied or formed. The barrier layer allows tunneling current to occur between the p-type layer and the metal-containing electrical contact establishing a low-resistance, highly uniform, and thermally stable electrical contact.

Abstract: An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.

Abstract: Solar module manufacturing methods for manufacturing a solar electric module including photovoltaic cells. The method includes applying an interconnect material to a flexible electrical backplane having preformed conductive interconnect circuitry to form interconnect attachments. The method aligns an array of back contact PV cells with the interconnect attachments. Conductive pathways are formed between the PV cells and the conductive interconnects of the flexible electrical backplane. The method applies an encapsulant material to fill spaces formed between the PV cells and the flexible electrical backplane to form a solar cell subassembly, which is incorporated into a solar electric module.

Abstract: There are disclosed an electrode having a large amount of a dye to be supported, having an excellent dye replacement property and having a capability of improving a photoelectric conversion efficiency, a manufacturing method of the electrode and a dye-sensitized solar cell including the electrode. An electrode 11 according to the present invention includes a dye-supported layer 14 laminated on a substrate 12 and including zinc oxide and a dye. The dye-supported layer 14 has at least a plurality of bump-like protrusions formed so that zinc oxide protrudes radially from the substrate 12, or satisfies represented by the following formula (1): 2?I002/I101?12, in which I002 is a peak intensity attributed to a zinc oxide (002) face in X-ray diffraction measurement of the dye-supported layer 14, and I101 is a peak intensity attributed to a zinc oxide (101) face in the X-ray diffraction measurement.

Abstract: A method for fabricating an array of interconnected photovoltaic cells on a single substrate is disclosed. A silicon nitride (SiNx) layer is deposited onto a glass substrate for use as both a diffusion barrier and as an anti-reflection coating (ARC); an n+ Si layer is deposited as a front electrode and as a wetting layer for subsequent coating with a crystalline Si layer by liquid phase deposition (LPD); a first laser scribing is performed to separate the n+ Si layer into stripes; stripes of crystalline Si are deposited onto the first n+ Si layer, with a small offset, wherein each stripe of crystalline Si covers a majority of one stripe of n+ layer underneath, and also covers an edge portion of a neighboring stripe of n+ layer; a p+ a-Si layer is deposited; an Al layer is deposited for use as both an electrode and as a back-reflector; and the Al and p+ Si layers are divided into stripes to form spaced, isolated solar cells.

Abstract: In a solar cell module in which a plurality of dye sensitized solar cells is arranged on a plane basis and is connected in series with an intercell region interposed therebetween, a first transparent substrate, a first transparent conductive film, a dye carrying oxide semiconductor layer, an electrolyte layer, a catalyst layer, a second transparent conductive film and a second transparent substrate are laminated, an insulating barrier seals cells on both sides thereof in fluid tightness and insulates them in the intercell region, an electrode connecting portion provided in a central part in a vertical direction of the insulating barrier connects an extended portion of the first transparent conductive film of one of the cells on the both sides to that of a second transparent conductive film of the other cell, and the electrode connecting portion penetrates through at least one of the first transparent substrate and the second transparent substrate in the vertical direction and is thus exposed.

Abstract: A method for liquid phase deposition of crystalline silicon thin films, and a high efficiency solar cell that is fabricated using crystalline silicon thin film technology, has the performance of a crystal silicon solar cell, but at the cost level per unit area of a solar cell fabricated using an amorphous silicon thin film. The crystal thin film uses only 10% or less of the amount of silicon used in a wafer-based solar cell. Because of the maturity of silicon technology in semiconductor industry, this approach not only enables high volume, automated production of solar cells on a very large, low-cost substrate, but also increases the area throughput up to 10000 cm2/min from 942 cm2/min in case of CZ crystal growth.

Abstract: Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device comprises a substrate. A dielectric layer is formed over the substrate and a phase change material layer is embedded in the dielectric layer. A first conductive electrode is also embedded in the dielectric layer to penetrate the phase change material layer and extends perpendicular to a top surface of the dielectric layer.

Abstract: A solar cell module and a method for the production thereof, are used in particular in the field of concentrating solar technology. The solar cell module has a large number of two-dimensionally disposed solar cells. These solar cells are applied on a substrate which is coated with a metal layer on the surface orientated towards the solar cells. The metal layer is thereby structured in such a manner that it is subdivided into individual two-dimensional portions which are assigned respectively to one solar cell. The metal layer in each of the portions has two regions which are electrically insulated from each other, the first region extending under the assigned solar cell and contacting the latter in an electrically conductive manner. The second region is likewise connected to the other electrical contact of the solar cell.

Abstract: A solar module includes a plurality of interconnected photovoltaic cells, an encapsulant layer encapsulating the photovoltaic cells, the encapsulant layer having a first side, a protective layer coupled to the first side of the encapsulant layer, and a stiffening layer coupled to the protective layer, the stiffening layer having an open support structure that provides stiffness to the solar module.

Abstract: A method of making a micron gap thermal photovoltaic device wherein at least one standoff is formed on a photovoltaic substrate, a sacrificial layer is deposited on the photovoltaic substrate and about the standoff, an emitter is attached to the standoff and has a lower planar surface separated from the photovoltaic substrate by the sacrificial layer, and the sacrificial layer is removed to form a sub-micron gap between the photovoltaic substrate and the lower planar surface of the emitter.

Abstract: The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode; an active organic layer comprising an electron-donating organic material and an electron-accepting organic material; a semiconducting layer formed between the anode and the active organic layer; and an electron-blocking layer (EBL) formed between the semiconducting layer and the active organic layer, where the EBL is transparent and adapted for blocking electron leakage from the active organic layer to the anode while transporting holes from the active organic layer to the anode.

Abstract: The present invention relates to a method for producing a photovoltaic novelty item. Conductive polymer solutions and semiconductive oxide dispersions are formulated into inks that are laid down on top of one another to produce voltage and current when exposed to light. In addition, these inks may be printed on novelty items, such as magazine advertisements or greeting cards, connecting to printed light emitting graphics.

Abstract: A method of making an anti-reflection coating using a sol-gel process, for use in a photovoltaic device or the like. The method may include the following steps in certain example embodiments: forming a polymeric component of silica by mixing silane(s) with one or more of a first solvent, a catalyst, and water; forming a silica sol gel by mixing the polymeric component with a colloidal silica, and optionally a second solvent; forming a metal oxide sol by mixing silane(s) with a metal oxide, a second catalyst, and a third solvent; forming a combined sol by mixing the metal oxide sol with the silica sol; casting the mixture by spin coating or the like to form a silica and metal oxide containing layer on a substrate; and curing and/or heat treating the layer. This layer may make up all or only part of an anti-reflection coating which may be used in a photovoltaic device or the like.

Abstract: Nanostructures and quantum dots are used in photovoltaic cells or solar cells outside of the active layer to improve efficiency and other solar cell properties. In particular, organic photovoltaic cells can benefit. The quantum dot can absorb light which is not absorbed by the active layer and emit red-shifted light which is absorbed by the active layer. The active layer, the hole transport layer, or the hole injection layer can comprise regioregular polythiophenes. Quantum dots can form a quantum dot layer, and the quantum dot layer can be found between the light source and the active layer or on the side of the active layer opposite the light source. Quantum dots can also be used in electrode layers.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base layer and a connector layer that is formed on the transparent conductive layer. The connector layer comprises the busbar and the fingers of the solar cell. The busbar is preferably placed over the electrically resistive portion while the fingers extend over the active portion of the absorber layer.

Abstract: The invention relates to an anti-reflecting coating (20) comprising a combined inner coating (21), made of anti-reflecting silicon, and outer coating (22) made of carbon in the form of an amorphous diamond which is essentially non-porous and essentially devoid of foreign species. The invention also relates to a method for the production of an anti-reflecting coating and to the use thereof as a coating for a solar batter (10). The coating is less likely to deteriorate with time and can improve the spectral domain of efficient conversion of radiation.

Abstract: The present invention, in one embodiment, provides a method of forming an organic electric device that includes providing a plurality of carbon nanostructures; and dispersing the plurality of carbon nanostructures in a polymeric matrix to provide a polymeric composite, wherein when the plurality of carbon nanostructures are present at a first concentration an interface of the plurality of carbon nanostructures and the polymeric matrix is characterized by charge transport when an external energy is applied, and when the plurality of carbon nanostructures are present at a second concentration the interface of the plurality of carbon nanostructures and the polymeric matrix are characterized by exciton dissociation when an external energy is applied, wherein the first concentration is less than the second concentration.

Abstract: A method of making an anti-reflection coating using a sol-gel process, for use in a photovoltaic device or the like. The method may include the following steps in certain example embodiments: forming a polymeric component of silica by mixing glycycloxypropyltrimethoxysilane (or other suitable silane) with one or more of a first solvent, a catalyst, and water; forming a silica sol gel by mixing the polymeric component with a colloidal silica, optionally a second solvent, and at least one organic additive; casting the mixture by spin coating to form a porous silica based layer on a substrate; and curing and/or heat treating the layer. This layer may make up all or only part of an anti-reflection coating.

Abstract: Disclosed is a photo-electrode for a dye-sensitized solar cell comprising a conductive substrate; a meso-porous metal oxide thin film formed on the surface of the conductive substrate; a porous film formed on the meso-porous metal oxide thin film and comprising metal oxide nanoparticles; and a photosensitive dye adsorbed on the surface of the porous film; and a process for preparation thereof.

Abstract: Conventional optoconductive compounds, such as CIS or CdTe include scarce indium or environmentally-unfriendly cadmium. On the other hand, an optoconductive compound according to the present invention has high optoconductive efficiency without inclusion of indium and cadmium, wherein the optoconductive compound according to the present invention is represented by AXYY? where A is a Group 11 element, X is a Group 15 element, and Y and Y? are Group 16 elements in which Y and Y? can be identical to or different from each other.

Abstract: A solar cell pre-laminate assembly comprising (i) a solar cell component comprising one or a plurality of solar cells and having a light-receiving side and a back side, and (ii) stiff poly(vinyl butyral) sheet as an encapsulant layer, wherein the stiff poly(vinyl butyral) sheet is positioned next to the light-receiving or the back side of the solar cell component and comprises a poly(vinyl butyral) composition containing about 10 to about 23 wt % of a plasticizer based on the total weight of the composition. A process of preparing solar cell assembly comprising (i) providing a solar cell component and a stiff poly(vinyl butyral) sheet comprising a poly(vinyl butyral) composition containing about 10 to about 23 wt % of a plasticizer based on the total weight of the poly(vinyl butyral) composition, and (ii) encapsulating the solar cell component in a polymer matrix comprising the poly(vinyl butyral) composition.

Abstract: The present invention relates to a layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, where the laser-induced aggregation silicon nano-dots are formed by a laser-induced aggregation process applied to the silicon-rich dielectric layer, and applications of the same. In one embodiment, the silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, and a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer is usable in a solar cell, a photosensitive element, a touch panel, a non-volatile memory device as storage node, and a display panel, respectively.

Abstract: Methods are disclosed of fabricating a solar cell system. A solar cell is formed over a substrate. The substrate is attached to a carrier. A translucent or transparent protective cover is overlaid over the solar cell to produce the solar cell system, which is deployed onto an exterior of a building.

Abstract: Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same.

Abstract: One exemplary embodiment of a semiconductor structure can include: (a) a semiconductor substrate of one conductivity type, having a front surface and a back surface and including at least one via through the semiconductor substrate, where the at least one via is filled with a conductive material; and (b) a semiconductor layer disposed on at least a portion of the front or back surface of the semiconductor substrate, where the semiconductor layer is compositionally graded through its depth with one or more selected dopants, and the conductive material is configured to electrically couple the semiconductor layer to at least one front contact disposed on or over the surface of the substrate.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no liquid phase of the alloy is present in a temperature range between room temperature and a deposition temperature higher than room temperature, wherein the group IIIA element is otherwise liquid in that temperature range.

Abstract: The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallising, at least partly, the at least one first layer (13) using a technology for crystallising silicon by pulsed electronic beam.

Abstract: A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The bias electrodes are at least partially separated from the substrate with a buffer layer, which in one embodiment has a small amount of conductivity. This conductive buffer layer reduces optical loss from the bias electrodes and also reduces DC drift.

Abstract: A photovoltaic device includes a substrate having at least two surfaces and a multilayered film disposed on at least a portion of at least one surface of the substrate. Elongated nanostructures are disposed on the multilayered film. The device incorporates a top layer of the multilayered film contacting the elongated nanostructures that is a tunnel junction. The device has at least one layer deposited over the elongated nanostructures defining a portion of a photoactive junction. A solar panel includes at least one photovoltaic device. The solar panel isolates each such devices from its surrounding atmospheric environment and permits the generation of electrical power.

Abstract: An active layer utilized in a solar cell. The active layer includes a polymer film having a plurality of hollow column array structures formed therein and a semiconductor material filled in the hollow column structures. The invention also provides a method of fabricating the active layer utilized in a solar cell.

Abstract: The invention provides a fluoropolymer coated film comprising: a polymeric substrate film; and a fluoropolymer coating on the polymeric substrate film, the fluoropolymer coating comprising a vinyl fluoride copolymer comprised of about 40 to about 90 mole % of repeat units derived from vinyl fluoride and about 10 to about 60 mole % of repeat units derived from monomer selected from the group consisting of (a) and (b) below and mixtures thereof, with the proviso that about 0.

Abstract: A substrate-supported photoelectrode, which includes an essentially two-dimensional transparent conductive oxide (TCO) film supported by a substrate, wherein the film is doped with at least one element of Group III, and one or more single crystal essentially one-dimensional nanostructures that are integral with the film and grown upwardly therefrom without a boundary layer therebetween, wherein the film and the nanostructures are essentially identical in composition and include zinc oxide or a zinc oxide alloy. Methods for preparing the substrate-supported photoelectrode and solar cells incorporating the substrate-supported photoelectrode are also provided.

Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: The present invention provides composite organic materials and optoelectronic device, including photovoltaic devices, comprising the same. In one embodiment, a composite material comprises a polymeric phase and a nanoparticle phase, the nanoparticle phase comprising at least one exaggerated nanocrystalline grain.

Abstract: A process for large-scale production of CdTe/CdS thin film solar cell the films of the solar cells being deposited as a sequence on a transparent substrate, which comprises the steps of: depositing a film of a transparent conductive oxide (TCO) on the substrate; depositing a film of CdS on the TCO film; treating the CdTe film with Chlorine-containing inert gas; and depositing a back-contact film on the treated CdTe film. The Chlorine-containing inert gas is a Chlorofluorocarbon or a Hydrochlorofluorocarbon product and the treatment is carried out in a vacuum chamber at an operating temperature of 380-420° C. The Chlorine released as a result of the thermal dissociation of the product reacts with solid CdTe present on the cell surface to produce TeCl2 and CdCl2 vapors. Any residual CdCl2 is removed from the cell surface by applying a vacuum to the vacuum chamber while keeping the temperature at the operating value.

Abstract: An underlayer of a phosphor layer is disposed on a sensor panel including two-dimensionally arranged photoelectric conversion devices. The surface of the underlayer is subjected to atmospheric pressure plasma treatment. The phosphor layer is formed on the surface-treated underlayer. Then, the phosphor layer is covered with a moisture-resistant protective layer, a reflection layer, and another protective layer. Thus, the phosphor layer is prevented from peeling due to adhesion failure, and is constituted of uniformly shaped crystals by vapor deposition. A resulting radiation detecting apparatus exhibits high sensitivity and high definition, producing a uniform photoelectric conversion efficiency.

Abstract: A photovoltaic device and a method for production thereof. The photovoltaic device comprises an anode (32), a cathode (46) spaced apart from the anode, and at least one subcell disposed between the anode and the cathode. The subcell comprises a charge-transfer dyad (38) with a light absorbing electron donor moiety (40) and an electron acceptor moiety (42), which are covalently linked to each other in a non-flexible configuration and oriented such that each subcell is capable of performing primary photo-induced vectorial electron transfer between the donor and acceptor moieties in the direction from the anode to cathode. The structure of the donor-acceptor molecule is highly symmetric, which greatly increases the intramolecular electron transfer probability and, thereby, the efficiency of the device.

Abstract: Photovoltaic conductive features and processes for forming photovoltaic conductive features are described. The process comprises (a) depositing a composition onto at least a portion of a substrate, wherein the composition comprises metal-containing particles having a primary particle size of from about 10 nanometers to less than 500 nanometers and including a continuous or non-continuous coating of a ceramic material; and (b) heating the composition such that the precursor composition forms at least a portion of a photovoltaic conductive feature. The metal-containing particles are preferably produced by flame spraying.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: The invention relates to a method for the production of an SiN:H layer on a substrate which converts light into electric voltage, wherein a silicon-containing target is sputtered and at least one reactive gas in introduced into the volume between target and substrate. The silicon-containing target is implemented in the form of a tube and is comprised of an Si-based alloy with an Al content of 2 to 50 wt. %.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: In some embodiments, the present invention is directed to compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive. In other embodiments, the present invention is directed to methods of making such photovoltaic devices, as well as to applications which utilize such devices (e.g., solar cell modules).

Abstract: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

Abstract: A photovoltaic device can include metal layer in contact with a semiconductor layer.

Abstract: The present invention relates to a nanocomposite device comprising a polymeric matrix, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs. In addition, the present invention relates to a method of making a nanocomposite device. The method includes providing a mixture comprising a polymer, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs or a soluble precursor thereof, depositing the mixture on a substrate, and treating the mixture under conditions effective to produce a nanocomposite device comprising the polymeric matrix, semiconducting nanoparticles, and the semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs. Thin film devices including the nanocomposite device are also disclosed.