Coating Is Selenium, Tellurium, Or Compound Thereof Patents (Class 427/76)
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Patent number: 12136680Abstract: An optoelectronic device comprising two photovoltaic absorber materials of CdSeTe and perovskite and their functional component layers that are monolithically integrated into a bifacial tandem solar cell structure.Type: GrantFiled: November 18, 2021Date of Patent: November 5, 2024Assignee: The University of ToledoInventors: Zhaoning Song, Kamala Khanal Subedi, Randy Ellingson, Yanfa Yan
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Patent number: 11961923Abstract: A solar cell is provided, including a front electrode, a functional layer, and a back electrode. The front electrode is an electrode on a side of an illuminated surface. The front electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other, or the back electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other. The front electrode and/or the back electrode may be designed to be separated by region, and conductivity of one conductive region is designed to be higher than conductivity of the other conductive region. According to the application, a film rectangular resistance loss caused by large-scale non-uniform lateral transfer of a photocurrent is avoided, thereby improving photoelectric conversion efficiency of the cell, and improving the cell comprehensive performance by flexibly selecting materials based on different requirements of different regions in different application scenarios.Type: GrantFiled: April 20, 2022Date of Patent: April 16, 2024Assignee: Huawei Technologies Co., Ltd.Inventors: Shuo Wang, Kai Xin, Yunfeng Liu
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Patent number: 11710799Abstract: Disclosed herein are CdTe-based solar cells that are successfully removed from their glass superstrate through a combination of lamination to a backsheet followed by thermal shock.Type: GrantFiled: March 22, 2019Date of Patent: July 25, 2023Assignee: Alliance for Sustainable Energy, LLCInventors: Matthew Owen Reese, Deborah Lee McGott, Michael David Kempe, Teresa Marie Barnes, Colin Andrew Wolden
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Patent number: 9575423Abstract: An electrophotographic photosensitive member has a photosensitive layer. The photosensitive layer is a multi-layer photosensitive layer having a charge transport layer being an outermost layer or a single-layer photosensitive layer. The amount of silica particles contained in the photosensitive layer is at least 0.5 parts by mass and no greater than 15 parts by mass relative to 100 parts by mass of a binder resin contained in the photosensitive layer.Type: GrantFiled: March 6, 2015Date of Patent: February 21, 2017Assignee: KYOCERA Document Solutions Inc.Inventors: Jun Azuma, Kensuke Okawa, Akihiko Ogata, Takahiro Oki
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Patent number: 9105797Abstract: An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.Type: GrantFiled: September 4, 2012Date of Patent: August 11, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Calvin J. Curtis, Peter A. Hersh, Alexander Miedaner, Susan Habas, Maikel van Hest, David S. Ginley
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Patent number: 8894826Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.Type: GrantFiled: September 17, 2010Date of Patent: November 25, 2014Inventors: Jesse A. Frantz, Jasbinder S. Sanghera, Robel Y. Bekele, Vinh Q Nguyen, Ishwar D. Aggarwal, Allan J. Bruce, Michael Cyrus, Sergey V. Frolov
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Publication number: 20140246088Abstract: A process for the preparation of a thin film having at least one layer of a predetermined thickness not exceeding 5 microns is provided such that the integrity of the thin film is preserved. The process for the preparation of such a thin film comprises the step of rolling at least one sheet. The step of rolling is preceded by a step of stacking at least one sheet on a substrate having a predetermined thickness. The process of stacking preferably includes the step of bonding at least one sheet to a substrate. The sheet is a metal, alloy or a combination thereof, the metal and the alloy being of metals selected from the groups IB, IIB, IIIA, IVA, IVB, VB and VIB.Type: ApplicationFiled: October 23, 2012Publication date: September 4, 2014Applicant: RELIANCE INDUSTRIES LIMITEDInventors: Uday Agarwal, Swanand Patil
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Patent number: 8809678Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group 13 and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stoichiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).Type: GrantFiled: May 7, 2012Date of Patent: August 19, 2014Assignee: aeris CAPITAL Sustainable IP Ltd.Inventors: Brian M. Sager, Dong Yu, Matthew R. Robinson
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Patent number: 8715775Abstract: Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula MB(ER)3, wherein MB is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.Type: GrantFiled: September 29, 2012Date of Patent: May 6, 2014Assignee: Precursor Energetics, Inc.Inventors: Kyle L. Fujdala, Zhongliang Zhu, Wayne A. Chomitz, Matthew C. Kuchta
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Patent number: 8709860Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.Type: GrantFiled: April 12, 2011Date of Patent: April 29, 2014Assignee: KYOCERA CorporationInventors: Shintaro Kubo, Rui Kamada, Yusuke Miyamichi, Shuji Nakazawa
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Patent number: 8709917Abstract: A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; a carboxylic acid component having a formula R—COOH, wherein R is selected from a C1-10 alkyl, C1-10 haloalkyl and a C1-10 mercaptoalkyl; a Group 3a complex, comprising at least one Group 3a material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3a complex is stably dispersed in the liquid carrier.Type: GrantFiled: May 18, 2010Date of Patent: April 29, 2014Assignee: Rohm and Haas Electronic Materials LLCInventors: Kevin Calzia, David Mosley, David L. Thorsen
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Patent number: 8673401Abstract: A method for depositing gallium using a gallium ink, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; is provided comprising applying the gallium ink on the substrate; heating the applied gallium ink to eliminate the additive and the liquid carrier, depositing gallium on the substrate; and, optionally, annealing the deposited gallium.Type: GrantFiled: January 7, 2013Date of Patent: March 18, 2014Assignee: Rohm and Haas Electronic Materials LLCInventors: David Mosley, David Thorsen
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Patent number: 8632851Abstract: A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure.Type: GrantFiled: April 26, 2013Date of Patent: January 21, 2014Assignee: Sun Harmonics LtdInventors: Yuhang Ren, Zhi Huang, Paifeng Luo, Kai Shum
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Patent number: 8617642Abstract: A preparation method of a CIS-based or CIGS-based thin film for a light absorption layer of a solar cell, which uses a paste prepared by mixing precursors of Cu, In, Se, and optional Ga in a solvent, minimizes the raw material loss, does not produce a toxic gas during the process, and is suitable for producing a large scale film at a low production cost.Type: GrantFiled: October 30, 2008Date of Patent: December 31, 2013Assignee: Korea Institute of Science and TechnologyInventors: Oh-shim Joo, Byoung Koun Min, Kwang Deog Jung, Jun-haeng Lee
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Patent number: 8609182Abstract: Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of the web.Type: GrantFiled: March 4, 2009Date of Patent: December 17, 2013Assignee: Global Solar Energy, Inc.Inventors: Jeffrey S. Britt, Scot Albright, Urs Schoop
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Patent number: 8585936Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.Type: GrantFiled: August 2, 2010Date of Patent: November 19, 2013Assignee: Precursor Energetics, Inc.Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta, Qinglan Huang
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Patent number: 8574685Abstract: A thin film and a method of making a thin film. The thin film comprises a patterned substrate, a smooth film of electric field tuned quantum dots solution positioned on the patterned substrate, and a thin layer of metal positioned on the thin film. The method begins by drop-casting a quantum dots solution onto a patterned substrate to create a thin film. While the quantum dots solution is drying, a linearly increasing electric filed is applied. The thin film is then placed in a deposition chamber and a thin layer of metal is deposited onto the thin film. Also included are a method of measuring the photoinduced charge transfer (PCT) rate in a quantum dot nanocomposite film and methods of forming a Shottky barrier on a transparent ITO electrode of a quantum dot film.Type: GrantFiled: August 24, 2010Date of Patent: November 5, 2013Assignee: University of South FloridaInventors: Jason Lewis, Xiaomei Jiang
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Patent number: 8557326Abstract: A method for manufacturing polycarbonate solar cells. The method is designed to adapt many techniques used in the compact disc manufacturing industry to the manufacture of polycarbonate solar cells. The method comprises: creating a polycarbonate substrate for a solar cell; depositing a low resistivity cathodic contact layer on the polycarbonate substrate; depositing a photonic energy absorbing layer with a sputter chamber comprising a quaternary CIGS sputter target; using a modulated high intensity pulsed xenon flashlamp; depositing a buffer layer; depositing a highly resistive transmissive intrinsic layer; depositing a transmissive contact oxide window layer; adding anodic contacts to one of the layers; depositing an anti-reflective coating layer; and encapsulating the solar cell to provide environmental protection.Type: GrantFiled: May 10, 2012Date of Patent: October 15, 2013Inventor: Arthur Don Harmala
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Patent number: 8551558Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.Type: GrantFiled: February 29, 2008Date of Patent: October 8, 2013Assignee: International Business Machines CorporationInventors: Supratik Guha, Oki Gunawan
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Patent number: 8545944Abstract: The present invention relates generally to production of photoelectric grade films or cells from semiconductor powders or dust. In one embodiment, the present invention provides a method for producing a photoelectric grade film from a semiconductor powder. The method includes providing a substrate, coating the substrate with a layer of the semiconductor powder and moving the substrate with the layer of the semiconductor powder under an energy source at a predefined rate, wherein the predefined rate is sufficient to melt the semiconductor powder by the energy source and to cool the substrate such that substantially all impurities are moved to an edge of the substrate.Type: GrantFiled: May 5, 2009Date of Patent: October 1, 2013Assignee: SRI InternationalInventor: Angel Sanjurjo
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Patent number: 8541048Abstract: An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200° C. and about 600° C. and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced.Type: GrantFiled: May 7, 2009Date of Patent: September 24, 2013Assignee: Nanosolar, Inc.Inventors: Craig Leidholm, Brent Bollman
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Patent number: 8440498Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof.Type: GrantFiled: December 5, 2011Date of Patent: May 14, 2013Assignee: Nanosolar, Inc.Inventors: Matthew R. Robinson, Chris Eberspacher, Jeroen K. J. Van Duren
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Patent number: 8414961Abstract: Methods and devices are provided for improved photovoltaic devices. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer.Type: GrantFiled: December 13, 2007Date of Patent: April 9, 2013Assignee: Nanosolar, Inc.Inventors: Matthew R. Robinson, Chris Eberspacher
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Patent number: 8410004Abstract: In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.Type: GrantFiled: April 10, 2012Date of Patent: April 2, 2013Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Erol Girt, Mariana Rodica Munteanu
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Patent number: 8372485Abstract: A gallium ink is provided, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; wherein the gallium ink is a stable dispersion. Also provided are methods of preparing the gallium ink and for using the gallium ink in the preparation of semiconductor films (e.g., in the deposition of a CIGS layer for use in photovoltaic devices).Type: GrantFiled: February 18, 2011Date of Patent: February 12, 2013Assignee: Rohm and Haas Electronic Materials LLCInventors: David Mosley, David Thorsen
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Patent number: 8318240Abstract: The present inventions relate to methods and apparatus for detecting and mechanically removing defects and a surrounding portion of the photovoltaic layer and the substrate in a thin film solar cell such as a Group IBIIIAVIA compound thin film solar cell to improve its efficiency.Type: GrantFiled: February 9, 2010Date of Patent: November 27, 2012Assignee: SoloPower, Inc.Inventors: Geordie Zapalac, David Soltz, Bulent M. Basol
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Patent number: 8277894Abstract: A selenium ink comprising selenium stably dispersed in a liquid medium is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photo responsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photo voltaic cells) and chalcogenide containing phase change memory materials.Type: GrantFiled: July 16, 2009Date of Patent: October 2, 2012Assignee: Rohm and Haas Electronic Materials LLCInventors: David Mosley, Kevin Calzia
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Publication number: 20120181440Abstract: A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive.Type: ApplicationFiled: September 27, 2011Publication date: July 19, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-il Kim, Jae-chul Park, Chang-jung Kim, Sang-wook Kim
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Publication number: 20120145244Abstract: A photoreceptive layer including heterogeneous dyes is provided. The dye fill density is enhanced and light absorption is achieved at a broad wavelength range, which enables the beneficial utilization of the photoreceptive layer in a dye-sensitized solar cell.Type: ApplicationFiled: February 23, 2012Publication date: June 14, 2012Inventors: Won-cheol Jung, Kyung-sang Cho, Jung-gyu Nam, Sang-cheol Park
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Patent number: 8197885Abstract: A method for producing a metal article according to one embodiment may include: Providing a supply of a sodium/molybdenum composite metal powder; compacting the sodium/molybdenum composite metal powder under sufficient pressure to form a preformed article; placing the preformed article in a sealed container; raising the temperature of the sealed container to a temperature that is lower than a sintering temperature of molybdenum; and subjecting the sealed container to an isostatic pressure for a time sufficient to increase the density of the article to at least about 90% of theoretical density.Type: GrantFiled: February 25, 2009Date of Patent: June 12, 2012Assignee: Climax Engineered Materials, LLCInventors: Dave Honecker, Christopher Michaluk, Carl Cox, James Cole
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Patent number: 8198123Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.Type: GrantFiled: April 15, 2009Date of Patent: June 12, 2012Assignee: Global Solar Energy, Inc.Inventors: Jeffrey S. Britt, Scott Wiedeman
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Patent number: 8193442Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).Type: GrantFiled: December 11, 2007Date of Patent: June 5, 2012Assignee: Nanosolar, Inc.Inventors: Brian M. Sager, Dong Yu, Matthew R. Robinson
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Patent number: 8158204Abstract: For making ceramic or oxidic layers (CL/OL) on substrates (S), the method according to the invention therefore provides that following application (I) and drying (II) of a suitable precursor (P) the formed precursor layer (PLD) is gassed (III) with a moist reactant gas (RG) for conversion into a corresponding hydroxide or complex layer (HL) and then thermally treated (IV) for forming a ceramic or oxidic layer (CL/OL). For the alternative production of other chalcogenidic layers of increased material conversion additional gassing is carried out with a reactant gas containing chalcogen hydrogen. Metallic layers may alternatively be made by use of a reducing reactant gas. The methods in accordance with the invention may be used wherever surfaces, even those of shaded structures, must be protected or modified or provided with functional layers, particularly in solar and materials technology.Type: GrantFiled: April 6, 2000Date of Patent: April 17, 2012Assignee: Helmholtz-Zentrum Berlin Fuer Materialien und Energie GmbHInventors: Christian-Herbert Fischer, Martha Christina Lux-Steiner, Hans-Juergen Baecker
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Patent number: 8110428Abstract: A method is provided for producing a thin-film photovoltaic device. The method includes forming on a substrate a first thin-film absorber layer using a first deposition process. A second thin-film absorber layer is formed on the first thin-film absorber layer using a second deposition process different from the first deposition process. The first and second thin-film absorber layers are each photovoltaically active regions and the second thin-film absorber layer has a smaller concentration of defects than the first thin-film absorber layer.Type: GrantFiled: November 25, 2008Date of Patent: February 7, 2012Assignee: Sunlight Photonics Inc.Inventors: Sergey Frolov, Allan James Bruce, Michael Cyrus
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Patent number: 8088309Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.Type: GrantFiled: October 31, 2007Date of Patent: January 3, 2012Assignee: Nanosolar, Inc.Inventors: Dong Yu, Jacqueline Fidanza, Brian M. Sager
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Patent number: 8071419Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C.Type: GrantFiled: June 12, 2007Date of Patent: December 6, 2011Assignee: Nanosolar, Inc.Inventors: Matthew R. Robinson, Chris Eberspacher, Jeroen K. J. Van Duren
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Patent number: 8057781Abstract: The invention provides a fabrication method for a chalcopyrite powder. The fabrication method includes: (a) mixing a Group IB compound and a Group IIIA compound in a solvent; (b) drying or precipitating the solution of step (a) to obtain a precursor containing Group IB and Group IIIA elements; (c) mixing a solution or powder containing a Group VIA compound with the precursor; and (d) heating the mixture of step (c) to obtain the chalcopyrite powder.Type: GrantFiled: June 10, 2010Date of Patent: November 15, 2011Assignee: National Taiwan UniversityInventors: Chung-Hsin Lu, Chung-Hsien Wu, Szu-Chia Chien, Zhi-Liang Liu
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Patent number: 8034317Abstract: A composition of matter, includes a plurality of anisotropic nanoparticles that are in physical contact with one another, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction. The plurality a anisotropic nanoparticles are substantially aligned with respect to each other to define a substantially close packed dense layer having a non-random shared crystallographic orientation that is substantially aligned with a basal plane of the substantially close packed dense layer. The plurality of anisotropic nanoparticles includes a member selected from the group consisting of (In,Ga)y(S,Se)1-y, an In2Se3 stable wurtzite structure that defines a hexagonal rod nanoparticle, Cux(Se)1-x and Cu(In,Ga)y(S,Se)1-y.Type: GrantFiled: June 18, 2007Date of Patent: October 11, 2011Assignee: Heliovolt CorporationInventor: Billy J. Stanbery
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Patent number: 8012546Abstract: A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.Type: GrantFiled: August 23, 2007Date of Patent: September 6, 2011Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Shogo Ishizuka, Shigeru Niki, Keiichiro Sakurai, Akimasa Yamada, Koji Matsubara
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Patent number: 7955586Abstract: A method for preparing III-VI2 nanoparticles and a thin film of polycrystalline light absorber layers. The method for preparing I-III-VI2 nanoparticles comprises the steps of: (a1) preparing a mixed solution by mixing each element from groups I, III and VI in the periodic table with a solvent; (a2) sonicating the mixed solution; (a3) separating the solvent from the sonicated mixed solution; and (a4) drying the product resulted from the above step (a3) to obtain nanoparticles.Type: GrantFiled: June 17, 2008Date of Patent: June 7, 2011Assignee: Sungkyunkwan University Foundation For Corporate CollaborationInventors: Duk-Young Jung, Jae Eok Han, Juyeon Chang
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Patent number: 7939048Abstract: Methods for assemblies of anisotropic nanoparticles which includes forming a substantially close packed dense layer by assembling a plurality of anisotropic nanoparticles, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction, wherein assembling includes mechanically interacting the plurality of anisotropic nanoparticles by imposing a delocalized force that defines a direction that is substantially perpendicular to a basal plane of the substantially closed packed dense layer; and imposing a fluctuating force to which the anisotropic nanoparticles respond, which is sufficient to overcome a short range weak attractive force between members of the plurality of anisotropic nanoparticles with respect to anisotropic nanoparticles that are not substantially overlapping.Type: GrantFiled: October 31, 2007Date of Patent: May 10, 2011Assignee: HelioVolt CorporationInventor: Billy J. Stanbery
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Publication number: 20110094557Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.Type: ApplicationFiled: October 27, 2009Publication date: April 28, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David B. Mitzi, Teodor K. Todorov
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Publication number: 20110083730Abstract: The present invention relates to substrates coated with films comprising compounds of general formula (I) below: and also to the process for manufacturing them and to their use as anode interface layer in electronic devices. The present invention also relates to organic electroluminescent diodes (OLED), polymeric electroluminescent diodes (PLED), organic field-effect transistors (OFET) and organic solar cells (OSC) comprising a substrate according to the invention, to specific organic solar cells and to the process for manufacturing them. Compounds of formula (I) as such also form part of the invention.Type: ApplicationFiled: October 13, 2009Publication date: April 14, 2011Inventors: Denis Fichou, Stéphane Berny, Ludovic Tortech
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Publication number: 20110059231Abstract: Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment.Type: ApplicationFiled: June 11, 2010Publication date: March 10, 2011Inventors: Brent Bollman, Craig Leidholm
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Publication number: 20110056564Abstract: A nanoparticle composition is disclosed comprising a copper indium gallium selenide, a copper indium sulfide, or a combination thereof. Also disclosed is a layer comprising the nanoparticle composition. A photovoltaic device comprising the nanoparticle composition and/or the absorbing layer is disclosed. Also disclosed are methods for producing the nanoparticle compositions, absorbing layers, and photovoltaic devices described herein.Type: ApplicationFiled: May 7, 2009Publication date: March 10, 2011Inventors: Brian A. Korgel, Matthew G. Panthani, Brian W. Goodfellow, Vahid A. Akhavan, Bonil Koo
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Patent number: 7867551Abstract: A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially reacted. After the dopant structure is formed on the partially reacted precursor layer, the dopant structure and partially reacted precursor layer is fully reacted. The dopant structure includes a dopant material such as Na.Type: GrantFiled: September 21, 2007Date of Patent: January 11, 2011Assignee: SoloPower, Inc.Inventor: Bulent M. Basol
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Patent number: 7847187Abstract: The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising a binary compound of the formula (I) or a ternary compound of the formula (II): ZnTe??(I) Zn1-xMnxTe??(II) where x is from 0.01 to 0.99, and a particular proportion of tellurium ions in the photovoltaically active semiconductor material has been replaced by halogen ions and nitrogen ions and the halogen ions are selected from the group consisting of fluoride, chloride and bromide and mixtures thereof.Type: GrantFiled: October 26, 2005Date of Patent: December 7, 2010Assignee: BASF AktiengesellschaftInventor: Hans-Josef Sterzel
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Patent number: 7838063Abstract: Provided is a process for preparing an absorption layer of a solar cell composed of a 1B-3A-Se compound, comprising applying a metal selenide nanoparticle as a precursor material to a base material and subjecting the applied nanoparticle to thermal processing, whereby the crystal size of the 1B-3A-Se compound can be increased as compared to a conventional method using a metal in the form of an oxide as a precursor material, consequently resulting in an enhanced efficiency of the solar cell, and the manufacturing process can be simplified with omission of hydrogen reduction and selenidation processes.Type: GrantFiled: August 31, 2006Date of Patent: November 23, 2010Assignee: LG Chem, Ltd.Inventor: Seokhyun Yoon
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Patent number: 7673382Abstract: A method of forming an external electrode of an electronic component involving: a paste preparation step, a removal step, an element preparation step, a contact step, and a formation step. A jig with a groove into which an element forming the electronic component can be inserted is prepared. A conductive paste is filled in the groove, and then removed, so as to leave the conductive paste along a first wall surface of the groove and remove the rest. Then, element immediately above the groove is located, and inserted into the groove and moved toward the first wall surface. Finally, the element is moved along the first wall surface and toward the aperture in a state in which the ridgeline of the element is kept in contact with the first wall surface, and moved away from the first wall surface so as to separate the ridgeline from the first wall surface.Type: GrantFiled: December 20, 2006Date of Patent: March 9, 2010Assignee: TDK CorporationInventors: Ko Onodera, Satoshi Kurimoto, Yoji Tozawa, Shirou Ootsuki
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Patent number: 7674713Abstract: A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.Type: GrantFiled: August 2, 2005Date of Patent: March 9, 2010Assignee: Calyxo GmbHInventors: Norman W. Johnston, Kenneth R. Kormanyos, Nicholas A. Reiter