Vapor Deposition Or Spraying Patents (Class 427/78)
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Patent number: 6648712Abstract: A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.Type: GrantFiled: October 2, 2002Date of Patent: November 18, 2003Assignee: Electronics and Telecommunications Research InstituteInventors: Sung-Yool Choi, Mun-Cheol Paek, Kyoung-Ik Cho, Jeen Hur, Gi-Pyung Han
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Patent number: 6635307Abstract: A method for depositing a coating onto a solid substrate for the fabrication of a functional layer in a solar cell device wherein the functional layer is used as an anti-reflection layer, an active layer for photon absorption and charge generation, a buffer layer, a window layer, or an electrode layer.Type: GrantFiled: December 12, 2001Date of Patent: October 21, 2003Assignee: Nanotek Instruments, Inc.Inventors: Wen-Chiang Huang, Liangwei Wu
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Publication number: 20030143321Abstract: The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant metal. The growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer. For producing a display structure, a control grid is obtained from the metal layer having an emission threshold higher than a field density at which the cathode emits the required current. The inventive method enables to avoid operations of removing the emission layer making it possible to produce flat displays having high characteristics in addition to high performance and low cost.Type: ApplicationFiled: October 23, 2002Publication date: July 31, 2003Inventors: Alexandr Alexandrovich Blyablin, Alexandr Tursunovich Rakhimov, Vladimir Anatolievich Samorodov, Nikolaii Vladislavovich Suetin
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Patent number: 6565916Abstract: A method for producing an oxide cathode including a sleeve containing a heater coil, a cathode substrate provided on one end of the sleeve, and an emissive material layer formed by thermally decomposing an alkaline earth metal carbonate layer adhered onto the cathode substrate, which method includes adhering the alkaline earth metal carbonate onto the cathode substrate so that it has a bulk density of 0.5 to 0.8 g/cm3, then pressing it so that the bulk density becomes not more than 0.9 g/cm3, and then thermally decomposing it in vacuum. Accordingly, an oxide cathode in which the current density distribution of emission electrons is smooth and an electron emission characteristic is not deteriorated when operated for a long time is realized, and a method for producing a cathode-ray tube with high resolution in which moire is invisible is provided.Type: GrantFiled: February 20, 2001Date of Patent: May 20, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshiki Hayashida, Yoshikazu Iwai, Shinji Sasaki
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Patent number: 6537122Abstract: Patterned graphite electron emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes and display panels. These graphite field emitters can be formed by screen printing a paste comprised of graphite and electrically insulating material (glass frit) in the desired patterned paste and bombarding the fire product with an ion beam.Type: GrantFiled: June 5, 2000Date of Patent: March 25, 2003Assignee: E. I. du Pont de Nemours and CompanyInventors: Daniel Irwin Amey, Jr., Robert Joseph Bouchard, Syed Ismat Ullah Shah
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Publication number: 20030054093Abstract: The present invention provides a metal composition for making a conductive film and a metal composition for making an electron emission element.Type: ApplicationFiled: April 4, 2002Publication date: March 20, 2003Inventors: Yasuko Tomida, Taku Shimoda
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Patent number: 6514559Abstract: A novel process for producing an electron source substrate is disclosed for formation of electron-emitting element at high efficiency with less shape irregularity. In the process, the region for electroconductive film formation is divided into plural subregions on which an electroconductive film is formed respectively. In forming the electroconductive film by application of plural liquids, the time interval between the application of the two drops is controlled to be larger than the time length necessary for suppressing the spreading of the succeedingly applied liquid within an allowable limit.Type: GrantFiled: March 19, 1998Date of Patent: February 4, 2003Assignee: Canon Kabushiki KaishaInventors: Masahiko Miyamoto, Mitsutoshi Hasegawa, Kazuhiro Sando, Kazuya Shigeoka
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Patent number: 6514112Abstract: Wire-coated graphite electron emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes, display panels and lighting devices. These graphite field emitters can be formed by coating a paste comprised of graphite and glass frit onto the wire, firing the paste and bombarding the fired product with an ion beam.Type: GrantFiled: June 5, 2000Date of Patent: February 4, 2003Assignee: E. I. du Pont de Nemours and CompanyInventors: Daniel Irwin Amey, Jr., Robert Joseph Bouchard, Syed Ismat Ullah Shah
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Publication number: 20020136830Abstract: A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.Type: ApplicationFiled: April 12, 2002Publication date: September 26, 2002Inventor: Kanwal K. Raina
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Publication number: 20020136896Abstract: A method of preparing an electron emission source having excellent electron emission characteristics which is easily produced and an electron emission source are provided. Chamber 101 is brought to He atmosphere of 1 Pa pressure, arc current of DC 100 A is allowed to flow to perform arc discharge for one second, cathode 102 is heated locally, cathode materials constituting cathode 102 are scattered and carbon particles on the surface of which a lot of carbon nano-tube is formed are produced. The aforementioned carbon particles are collected to use as an emitter of an electron emission source.Type: ApplicationFiled: May 6, 2002Publication date: September 26, 2002Applicant: FUTABA DENSHI KOGYO KABUSHIKI KAISHAInventors: Hirofumi Takikawa, Shigeo Itoh
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Publication number: 20020132041Abstract: An electron-emitting device comprises an electroconductive film including an electron-emitting region disposed between a pair of electrodes arranged on a substrate. The electron-emitting region is formed close to the step portion formed by one of the electrodes and the substrate.Type: ApplicationFiled: October 28, 1998Publication date: September 19, 2002Inventors: MASATO YAMANOBE, TAKEO TSUKAMOTO, KEISUKE YAMAMOTO, YASUHIRO HAMAMOTO
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Patent number: 6440505Abstract: The invention includes methods of treating sodalime glass surfaces for deposition of silicon nitride and methods of forming field emission display devices. In one aspect, the invention includes a method of treating a sodalime glass surface for deposition of silicon nitride comprising: a) cleaning a surface of the glass with detergent; and b) contacting the cleaned surface with a solution comprising a strong oxidant to remove non-silicon-dioxide materials from the surface and from a zone underlying and proximate the surface.Type: GrantFiled: November 6, 2000Date of Patent: August 27, 2002Assignee: Micron Technology, Inc.Inventor: Kanwal K. Raina
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Patent number: 6425992Abstract: A non-carbon, metal-based, high temperature resistant, electrically conductive and electrochemically active anode of a cell for the production of aluminum has a metal-based oxidation-resistant substrate to which an adherent multi-layer coating is applied prior to its immersion into the electrolyte and start up of the electrolysis by connection to the positive current supply. The multi-layer coating is obtainable from one or more applied layers selected from: a liquid solution, a dispersion in a liquid or a paste, a suspension in a liquid or a paste, and a pasty or non-pasty slurry, and combinations thereof, with or without heat treatment between two consecutively applied layers. At least one layer of the multi-layer coating contains a polymeric and/or a colloidal carrier. The coating is after final heat treatment electrically conductive and has during operation in the cell an electrochemically active surface for the oxidation of oxygen ions present at the surface of the anode.Type: GrantFiled: July 15, 2000Date of Patent: July 30, 2002Assignee: Moltech Invent S.A.Inventor: Vittorio de Nora
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Patent number: 6410101Abstract: A method for scrubbing and passivating an anode plate (100) of a field emission display (120) includes the steps of providing a scrubbing passivation material (127); imparting to scrubbing passivation material (127) an energy selected to cause removal of a contamination layer (123, 117) from anode plate (100); causing scrubbing passivation material (127) to be received by contamination layer (123, 117), thereby removing contamination layer (123, 117); and depositing at least a portion of scrubbing passivation material (127) on anode plate (100), thereby forming a passivation layer (129).Type: GrantFiled: February 16, 2000Date of Patent: June 25, 2002Assignee: Motorola, Inc.Inventors: James E. Jaskie, Albert Alec Talin
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Patent number: 6396049Abstract: An improved microchannel plate (24) is disclosed. The microchannel plate has an input side (24a) and an output side (24b). A coating (32) is applied to the input side (24a) to increase secondary electron production and to prevent ions from leaving the microchannel plate (24) and damaging the photocathode (22).Type: GrantFiled: January 31, 2000Date of Patent: May 28, 2002Assignee: Northrop Grumman CorporationInventors: Joseph P. Estrera, Michael J. Iosue, Adriana Giordana, John W. Glesener
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Patent number: 6383416Abstract: An electron-emitting material contains a first metal component selected from Ba, Sr and Ca and a second metal component selected from Ta, Zr, Nb, Ti and Hf and also contains oxynitride perovskite. The electron-emitting material has improved electron emission characteristics, restrained evaporation at elevated temperatures, and minimized consumption by ion sputtering. The electron-emitting material is prepared by firing a metal component-containing raw material disposed in proximity to carbon in a nitrogen gas-containing atmosphere to thereby create oxynitride perovskite.Type: GrantFiled: March 2, 2000Date of Patent: May 7, 2002Assignee: TDK CorporationInventors: Munemitsu Hamada, Akira Takeishi, Makoto Takahashi, Dai Matsuoka, Masatada Yodogawa, Hiraku Harada
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Publication number: 20020028285Abstract: A method of producing an electron-emitting device includes the steps of forming a pair of electrodes and an electrically-conductive thin film on a substrate in such a manner that the pair of electrodes are in contact with the electrically-conductive thin film and forming an electron emission region using the electrically-conductive thin film, wherein the method is characterized in that a solution containing a metal element is supplied in a droplet form onto the substrate thereby forming the electrically-conductive thin film.Type: ApplicationFiled: April 9, 1999Publication date: March 7, 2002Inventors: YOSHIKAZU BANNO, ETSURO KISHI, MITSUTOSHI HASEGAWA, KAZUHIRO SANDO, KAZUYA SHIGEOKA, MASAHIKO MIYAMOTO
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Patent number: 6334803Abstract: A surface conduction electron-emitting device has an electroconductive film including an electron-emitting region between a pair of electrode on a substrate. The electroconductive film is formed by producing a precursor film of an organic metal compound or complex thereof and then turning the precursor film into the electroconductive film by keeping the temperature of the film above the decomposition temperature of the organic metal compound or the complex thereof and applying a voltage to the film. A plurality of such electron-emitting devices are arranged on a substrate in a matrix or ladder-like manner to constitute an electron source. Such an electron source is used with an image-forming member disposed vis-a-vis the electron source to form an image-forming member.Type: GrantFiled: April 28, 1997Date of Patent: January 1, 2002Assignee: Canon Kabushiki KaishaInventor: Masaaki Shibata
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Publication number: 20010051209Abstract: This invention consists of a coating applied to the metal surface which reduces the field emission levels of the surface. This coating could also decrease the secondary electron coefficient of the surface. The preferred embodiment described below is a hybrid coating consisting of two layers. However, a single-layer coating may also be used so long as it decreases field emission. Likewise, any number of coating layers may be used, so long as the resultant coating reduces field emission. The coating may also alter the properties of the interface between the metal surface and any macroparticle debris, in order to reduce field emission levels, but this is not essential, so long as the field emission from the surface is reduced. The invention is a coating which is not harmful to dc and rf vacuum system components, as for example, coatings which contain halogen atoms, such as CaF [J. N. Smith, Jr., J. Appl. Phys. 59, 283 (1986)].Type: ApplicationFiled: October 11, 1996Publication date: December 13, 2001Inventors: RICHARD SILBERGLITT, WILLIAM PETER
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Method and system for enhanced vision employing an improved image intensifier and gated power supply
Patent number: 6320180Abstract: The present invention comprises a method for detecting photons and generating a representation of an image. A photocathode receives photons from an image. A power supply to the photocathode is gated such that the photocathode is switched between an on state and an off state. The photocathode discharges electrons in response to the received photons while the photocathode is in the on state. A microchannel plate with an unfilmed input face and an output face receives the electrons from the photocathode and produces secondary emission electrons which are emitted from the output face. A screen receives the secondary electrons and displays a representation of the image.Type: GrantFiled: June 4, 1999Date of Patent: November 20, 2001Assignee: Litton Systems, Inc.Inventors: Joseph P. Estrera, John W. Glesener, Michael R. Saldaña -
Patent number: 6316734Abstract: Circuit and circuit carries include a dielectric substrate having a conductive layer mounted thereon. The conductive layer is patterned to define a plurality of spaced apart conductive elements. A static charge dissipative layer is in contact with and extending between at least two of the conductive elements. The static charge dissipative layer has a surface resistivity of between about 1×105 and about 1×1010 ohms/□. The static charge dissipative layer is made of a material selected from the group consisting of diamond-like carbon, silicon nitride, boron nitride, boron trifluoride, silicon carbide and silicon dioxide. Circuits and circuit carriers according to the present invention allow static charges to be controllably and reliably dissipated from a surface of the circuit or circuit carrier such that the potential for damage from static discharge to electrical components connected to the circuit is reduced.Type: GrantFiled: March 7, 2000Date of Patent: November 13, 2001Assignee: 3M Innovative Properties CompanyInventor: Rui Yang
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Publication number: 20010019238Abstract: A field emission device having bundles of aligned parallel carbon nanotubes on a substrate. The carbon nanotubes are oriented perpendicular to the substrate. The carbon nanotube bundles may be up to 300 microns tall, for example. The bundles of carbon nanotubes extend only from regions of the substrate patterned with a catalyst material. Preferably, the catalyst material is iron oxide. The substrate is preferably porous silicon, as this produces the highest quality, most well-aligned nanotubes. Smooth, nonporous silicon or quartz can also be used as the substrate. The method of the invention starts with forming a porous layer on a silicon substrate by electrochemical etching. Then, a thin layer of iron is deposited on the porous layer in patterned regions. The iron is then oxidized into iron oxide, and then the substrate is exposed to ethylene gas at elevated temperature. The iron oxide catalyzes the formation of bundles of aligned parallel carbon nanotubes which grow perpendicular to the substrate surface.Type: ApplicationFiled: May 15, 2001Publication date: September 6, 2001Inventors: Hongjie Dai, Shoushan Fan, Michael Chapline, Nathan Franklin, Thomas Tombler
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Publication number: 20010014391Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.Type: ApplicationFiled: December 9, 1999Publication date: August 16, 2001Inventors: STEPHEN ROSS FORREST, MARK EDWARD THOMPSON, PAUL EDWARD BURROWS, LINDA SUSAN SAPOCHAK, DENNIS MATTHEW MCCARTY
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Patent number: 6259202Abstract: A method for modifying the surface properties such as work function of semiconducting and conducting layers by plasma treatment. Also disclosed are electrical devices such as organic light emitting devices of enhanced performance owing to the use of plasma treatment-modified semiconducting or conducting layers.Type: GrantFiled: May 5, 1999Date of Patent: July 10, 2001Assignee: The Trustees of Princeton UniversityInventors: James C. Sturm, Chung-Chih Wu
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Publication number: 20010001679Abstract: A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing treatment of a substrate and then depositing the film. The treatment step creates nucleation and growth sites on the substrate for the film deposition process and promotes election emission of the deposited film. With this process, a patterned emission can be achieved without post-deposition processing of the film. A field emitter device can be manufactured with such a film.Type: ApplicationFiled: January 4, 2001Publication date: May 24, 2001Applicant: SI Diamond Technology, Inc.Inventors: Zhidan Li Tolt, Zvi Yaniv, Richard Lee Fink
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Patent number: 6210545Abstract: An inventive method for forming a thin film comprises the steps of preparing a sputter-target of a material which is fully oxidized and crystallized to a perovskite structure, sputter-depositing a thin film on top of a sample with the target in an inert gas atmosphere, and annealing the thin film in non-oxygen ambient. With the use of such a target, it is possible to reduce the negative ion effect during the sputter deposition and to eliminate the presence of oxygen during the annealing process.Type: GrantFiled: November 23, 1999Date of Patent: April 3, 2001Assignee: International Business Machines CorporationInventors: Mukta Farooq, Robert A. Rita, Stephen M. Rossnagel
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Patent number: 6210245Abstract: In a method for producing an electron source substrate having a matrix of electron emitting elements formed by dispensing droplets of a solution containing a material for conductive thin film between each pair of element electrodes arranged in a matrix pattern on substrate, by use of an ink jet device, the ink jet device is the one having plural nozzles, delivery amounts of the respective nozzles are detected, the delivery amounts of the respective nozzles are adjusted based on the detection results, and thereafter dispensing of the droplets is carried out, during the dispensing of droplets, the substrate is moved relative to the ink jet device, and the droplets are dispensed from the plural nozzles to areas between each pair of element electrodes in plural rows or columns simultaneously and in parallel. An image forming apparatus is produced by placing at least a face plate equipped with fluorescent substance opposite the electron source substrate produced by the above method.Type: GrantFiled: May 8, 1998Date of Patent: April 3, 2001Assignee: Canon Kabushiki KaishaInventors: Kazuhiro Sando, Mitsutoshi Hasegawa, Seiji Mishima, Kazuya Shigeoka
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Patent number: 6180577Abstract: A method for inhibiting attachment of germs to the skin which comprises applying to the skin a composition comprising: (a) a skin cleansing effective amount of a surfactant or mixture of surfactants; (b) a silicone in amounts effective to inhibit attachment of germs to the skin, and rinsing said composition from the skin.Type: GrantFiled: May 4, 1999Date of Patent: January 30, 2001Assignee: Colgate-Palmolive CompanyInventors: Shamim Alam Ansari, Thomas Gregory Polefka
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Patent number: 6165568Abstract: The invention includes methods of treating sodalime glass surfaces for deposition of silicon nitride and methods of forming field emission display devices. In one aspect, the invention includes a method of treating a sodalime glass surface for deposition of silicon nitride comprising: a) cleaning a surface of the glass with detergent; and b) contacting the cleaned surface with a solution comprising a strong oxidant to remove non-silicon-dioxide materials from the surface and from a zone underlying and proximate the surface.Type: GrantFiled: February 9, 1998Date of Patent: December 26, 2000Assignee: Micron Technology, Inc.Inventor: Kanwal K. Raina
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Patent number: 6120857Abstract: Short-wavelength photons are used to ablate material from a low work function target onto a suitable substrate. The short-wavelength photons are at or below visible wavelength. The elemental composition of the deposit is controlled by the composition of the target and the gaseous environment in which the ablation process is performed. The process is carried out in a deposition chamber to which a short-wavelength laser is mounted and which includes a substrate holder which can be rotated, tilted, heated, or cooled. The target material is mounted onto a holder that spins the target during laser ablation. In addition, the deposition chamber is provided with a vacuum pump, an external gas supply with atomizer and radical generator, a gas generator for producing a flow of molecules on the substrate, and a substrate cleaning device, such as an ion gun. The substrate can be rotated and tilted, for example, whereby only the tip of an emitter can be coated with a low work function material.Type: GrantFiled: May 18, 1998Date of Patent: September 19, 2000Assignee: The Regents of the University of CaliforniaInventors: Mehdi Balooch, Long N. Dinh, Wigbert J. Siekhaus
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Patent number: 6103298Abstract: Methods for making low work function electrodes either made from or coated with an electride material in which the electride material has lattice defect sites are described. Lattice defect sites are regions of the crystal structure where irregularities and deformations occur. Also provided are methods for making electrodes which consist of a substrate coated with a layer of a compound comprised of a cation complexed by an electride former, in which said complex has lattice defect sites. In addition, methods for making electrodes which consist of a bulk metal coated with a layer of an electride former having lattice defect sites are described. The electride former stabilizes the loss of electrons by surface sites on the metal, lowering the work-function of the coated surface.Type: GrantFiled: October 22, 1997Date of Patent: August 15, 2000Assignee: Borealis Technical LimitedInventors: Jonathan Sidney Edelson, Isaiah Watas Cox
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Patent number: 6086944Abstract: The present invention involves a method for simultaneously applying an activation layer on the photoemissive layers of a plurality of photocathodes such as those used in image intensifier devices. The method includes the steps of diffusing a flux of activating chemicals over the plurality of photocathodes, wherein the flux is substantially spatially uniform with respect to the plurality of photocathodes; monitoring the sum photoresponse of the plurality of photocathodes; and terminating the flux of activating chemicals when a desired sum photoresponse is attained.Type: GrantFiled: February 18, 1997Date of Patent: July 11, 2000Assignee: ITT Manufacturing Enterprises, Inc.Inventors: Robert Peckman, Donald H. Stanley, Roger M. Voss, Joseph Herman Reich, Jr.
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Method of manufacturing electron-emitting device and image-forming apparatus comprising such devices
Patent number: 6063453Abstract: An electron-emitting device having an electroconductive film including an electron-emitting region and arranged between a pair of electrodes is manufactured by forming an electroconductive film on a substrate and producing an electron-emitting region in the electroconductive film. The electroconductive film is formed on the substrate by heating the substrate in an atmosphere containing a gasified organic metal compound to a temperature higher than the decomposition of the gasified organic metal compound.Type: GrantFiled: October 30, 1997Date of Patent: May 16, 2000Assignee: Canon Kabushiki KaishaInventors: Yoshinori Tomida, Hisaaki Kawade, Masahito Niibe, Toshikazu Ohnishi, Yoshimasa Okamura -
Patent number: 6060113Abstract: A method of producing an electron-emitting device includes the steps of forming a pair of electrodes and an electrically-conductive thin film on a substrate in such a manner that the pair of electrodes are in contact with the electrically-conductive thin film and forming an electron emission region using the electrically-conductive thin film, wherein a solution containing a metal element is supplied in a droplet form, such as by an inkjet system, onto the substrate thereby forming the electrically-conductive thin film.Type: GrantFiled: December 14, 1995Date of Patent: May 9, 2000Assignee: Canon Kabushiki KaishaInventors: Yoshikazu Banno, Etsuro Kishi, Mitsutoshi Hasegawa, Kazuhiro Sando, Kazuya Shigeoka, Masahiko Miyamoto
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Patent number: 6056615Abstract: A wet chemical process is provided for treating an emitter formed on a substrate of a field emission display, the process comprises applying a solution including hydrogen to the emitter. In one embodiment of the invention, the steps of applying a solution comprises applying a solution of hydrofluoric acid to the emitter.Type: GrantFiled: October 28, 1998Date of Patent: May 2, 2000Assignee: Micron Technology, Inc.Inventors: David A. Cathey, Terry Gilton
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Patent number: 6040001Abstract: This invention discloses a method of manufacturing a diamond vacuum device, and more particularly a method of manufacturing a diamond vacuum device which uses a diamond thin film as an electron emitter by electric field. The present invention presents a method of manufacturing a vacuum device for use in high speed, high voltage, using diamond having a negative electron affinity, which can emit electrons even at a low voltage and is also resistant to chemical variations.Type: GrantFiled: August 20, 1998Date of Patent: March 21, 2000Assignee: Electronics and Telecommunications Research InstituteInventors: Mun Cheol Paek, Sung Woo Choi, Kee Soo Nam
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Patent number: 6040000Abstract: There is disclosed in a microchannel plate for an image intensifier tube, a fissured material capable of secondary electron emission disposed on a top surface of the microchannel plate. The fissured material has randomized fissures which permit electrons impinging on the material to exhibit increased electron emission along each of the fissures. The fissured material operates as an electron multiplier causing a cascade of electrons for entry into the MCP channels in response to an electron entering a respective one of the fissures. The image intensifier tube includes an evacuated housing with a photo cathode disposed at a first end thereof, and an optic element disposed at a second end thereof. The microchannel plate with the fissured coating on the top surface is disposed in the evacuated housing between the photo cathode and the optic element.Type: GrantFiled: March 24, 1998Date of Patent: March 21, 2000Assignee: ITT Manufacturing Enterprises, Inc.Inventors: Richard F. Floryan, George Hambro
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Patent number: 6030700Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.Type: GrantFiled: November 7, 1997Date of Patent: February 29, 2000Assignee: The Trustees of Princeton UniversityInventors: Stephen Ross Forrest, Mark Edward Thompson, Paul Edward Burrows, Linda Susan Sapochak, Dennis Matthew McCarty
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Patent number: 6025094Abstract: Disclosed is an alkali metal negative electrode having a protective layer. Specifically, the disclosed negative electrode includes a glassy or amorphous surface protective layer which conducts alkali metal ions but effectively blocks the alkali metal in the electrode from direct contact with the ambient. The protective layer has improved smoothness and reduced internal stress in comparison to prior protective layers such as those formed by sputtering. In a specific embodiment, the protective layer is formed on the lithium metal electrode surface by a plasma assisted deposition technique.Type: GrantFiled: May 29, 1998Date of Patent: February 15, 2000Assignee: PolyPlus Battery Company, Inc.Inventors: Steven J. Visco, May-Ying Chu
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Patent number: 6017430Abstract: A cathode wherein the electrocatalytically-active outer layer is of substantially uniform thickness and has contours which are at least substantially the same as the contours of the substrate immediately underlying it. The electrode may be prepared by depositing the electrocatalytically-active outer layer by physical vapour deposition. The electrocatalytically-active outer layer comprises (a) cerium and/or cerium oxide and at least one non-noble Group 8 metal or (b) platinum and/or platinum oxide and ruthenium and/or ruthenium oxide.Type: GrantFiled: August 6, 1997Date of Patent: January 25, 2000Assignee: Imperial Chemical Industries PLCInventors: David Ronald Hodgson, Francis Rourke
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Patent number: 6015588Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.Type: GrantFiled: September 13, 1996Date of Patent: January 18, 2000Assignee: Electron R+D International, Inc.Inventor: Samuel Goukassian
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Patent number: 5965218Abstract: A method for manufacturing probe tips suitable for use in an atomic force microscope (AFM) or scanning tunneling microscope (STM) begins by depositing a layer of a first material over a substrate and then patterning the layer of the first material to define apertures wherever probe tips are to be formed. Next, a layer of a second material is deposited using an unbiased high density plasma chemical vapor deposition (HDPCVD) process to form sharp probe tips in the apertures in the layer of the first material. The HDPCVD process also forms a sacrificial layer of the second material on top of the portions of the first material not removed by the patterning step. The sacrificial layer at least partially overhangs the apertures in the first material, forming a shadow mask during the deposition process which gives rise to a sharp probe profile.Type: GrantFiled: March 18, 1997Date of Patent: October 12, 1999Assignee: VLSI Technology, Inc.Inventors: Subhas Bothra, Ling Q. Qian
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Patent number: 5935639Abstract: A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film.The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.Type: GrantFiled: January 20, 1998Date of Patent: August 10, 1999Assignee: Sandia CorporationInventors: John P. Sullivan, Thomas A. Friedmann
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Patent number: 5902640Abstract: A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.Type: GrantFiled: July 19, 1996Date of Patent: May 11, 1999Assignee: The University of ChicagoInventors: Alan R. Krauss, Dieter M. Gruen
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Patent number: 5888113Abstract: A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.Type: GrantFiled: March 27, 1997Date of Patent: March 30, 1999Assignee: Universities Research Association, Inc.Inventors: David F. Anderson, Simon W. Kwan
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Patent number: 5868913Abstract: Preparation of an electrode comprising a substrate of a valve metal or of an alloy thereof having similar properties thereto and a coating thereon comprising at least an outer layer of an electrocatalytically-active material which comprises an oxide of at least ruthenium and an oxide of at least one non-noble metal by a one-step coating process which comprises the vapor phase deposition of a mixture of at least ruthenium and/or oxide thereof and at least one non-noble metal or oxide thereof onto the substrate. The outer layer is of substantially uniform thickness, the contours thereof are at least substantially the same as the contours of the substrate underlying it and the electrode affords an increased surface area for a given mass of catalyst and a more efficient use of catalyst to obtain a given thickness thereof.Type: GrantFiled: January 11, 1996Date of Patent: February 9, 1999Assignee: Imperial Chemical Industries PLCInventor: David Ronald Hodgson
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Patent number: 5837331Abstract: An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.Type: GrantFiled: March 13, 1996Date of Patent: November 17, 1998Assignee: Motorola, Inc.Inventors: Eric P. Menu, John Song, Bernard F. Coll
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Patent number: 5776538Abstract: Microchannel plates for use in image intensifiers and night vision devices having both improved gain and signal-to-noise ratio are provided. The microchannel plates disclosed herein provide an initial electron impact area having a surface electron-emissivity coefficient greater than one (1) that is not occluded by low electron-emissivity conductive coatings. In one embodiment angulated deposition of a coating material is used to provide a high electron-emissivity initial electron-impact area while in another embodiment nonmetallic electrodes provide increased amplification of a signal electron. Besides improving gain and sensitivity, the microchannel plates of the present invention provide a higher signal-to-noise ratio, better resolution, high open area ratios and are significantly more cost effective to produce.Type: GrantFiled: September 26, 1995Date of Patent: July 7, 1998Inventors: Robert L. Pierle, Mark Gilpin, Hubert G. Parish, Po-Ping Lin
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Patent number: 5750013Abstract: An electrode membrane assembly structure comprises a substrate, two active catalytic layers, each active catalytic layer consisting of micro-particle metal layer(s) and porous conducting layer(s) arranged alternately, and a solid polymer membrane layer being sandwiched in said two active catalytic layers and having protonic conductivity. And a method for manufacturing an electrode membrane assembly comprises the steps of forming an active catalytic layer comprising micro-particle metal layers and porous conducting layers on a substrate by plasma sputtering deposition and chemical vapor deposition (CVD), respectively; then forming a solid polymer membrane layer having protonic conductivity on said active catalytic layer by chemical vapor deposition; and followed by further forming another active catalytic layer on said solid polymer membrane layer, all under the condition of vacuum environment, to obtain the electrode membrane assembly.Type: GrantFiled: August 7, 1996Date of Patent: May 12, 1998Assignee: Industrial Technology Research InstituteInventor: Andrew S. Lin
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Patent number: 5746634Abstract: A process method and system for making field emission cathodes exists. The deposition source divergence is controlled to produce field emission cathodes with height-to-base aspect ratios that are uniform over large substrate surface areas while using very short source-to-substrate distances. The rate of hole closure is controlled from the cone source. The substrate surface is coated in well defined increments. The deposition source is apertured to coat pixel areas on the substrate. The entire substrate is coated using a manipulator to incrementally move the whole substrate surface past the deposition source. Either collimated sputtering or evaporative deposition sources can be used. The position of the aperture and its size and shape are used to control the field emission cathode size and shape.Type: GrantFiled: April 3, 1996Date of Patent: May 5, 1998Assignee: The Regents of the University of CaliforniaInventors: Alan F. Jankowski, Jeffrey P. Hayes