Electric Superconducting Patents (Class 428/930)
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Patent number: 5736489Abstract: A method is provided for producing polycrystalline superconductor materials which utilizes a zdense and non-polluting 211 substrate which has been pre-sintered prior to melt processing with a 123 superconducting material. The resulting melt-processed material may be fabricated into a 123 superconductor having a single crystal size of up to 60 mm long which can carry very high current of up to about 1,500 A at 1 .mu.V/cm criterion.Type: GrantFiled: February 7, 1997Date of Patent: April 7, 1998Assignee: Wright State UniversityInventor: Gregory Kozlowski
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Patent number: 5736488Abstract: This invention relates to multilayered superconductive composites, particularly to composites based on thallium-containing superconducting oxides, and their process of manufacture.Type: GrantFiled: January 26, 1996Date of Patent: April 7, 1998Assignee: E. I. du Pont de Nemours and CompanyInventors: Dean Willett Face, Kirsten Elizabeth Myers
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Patent number: 5721197Abstract: A microelectronic thin-film device having a thin superconducting layer in contact with a thin quasi-insulating conversion layer. The critical current of the superconducting layer is controlled by application of a voltage to the conversion layer by means of a gate electrode, causing the conversion layer to undergo an insulator-metal transition.Type: GrantFiled: October 6, 1995Date of Patent: February 24, 1998Assignee: Dornier GmbHInventors: Hartmut Downar, Werner Scherber, Thomas Peterreins, Paul Ziemann
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Patent number: 5712227Abstract: A substrate having a superconducting thin film of compound oxide thereon. An intermediate layer consists of at least one layer of copper-containing oxide is interposed between the substrate and the superconducting thin film.Type: GrantFiled: January 25, 1995Date of Patent: January 27, 1998Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kenjiro Higaki, Keizo Harada, Takashi Matsuura, Hitoshi Oyama, Hideo Itozaki, Shuji Yazu
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Patent number: 5691279Abstract: c-axis oriented high temperature superconductors are deposited onto new compositions of garnets using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure; a block temperature of 730.degree. C., a substrate surface temperature of 790.degree. C. and a laser fluence of 1 to 2 Joules/cm.sup.2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the new compositions of garnets exhibit a mismatch of less than 7 percent with the a and b lattice parameters of the HTSC.Type: GrantFiled: April 18, 1995Date of Patent: November 25, 1997Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Arthur Tauber, Steven C. Tidrow
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Patent number: 5670459Abstract: In a bismuth oxide superconductor having a composition of Bi-Sr-Ca-Cu or (Bi,Pb)-Sr-Ca-Cu and being covered with a metal sheath, the a-b plane of a 2223 phase, which is a 110 K phase, is oriented along the longitudinal direction as a matrix, while a dispersed superconducting phase mainly consisting of a 2212 phase, which is a 80 K phase, and/or non-superconducting phases is dispersed along the a-b plane in the 2223 phase, so that a magnetic field property of its critical current density is extremely improved. In order to prepare such a bismuth oxide superconductor, performed are the steps of preparing raw material which is based on a 2223 composition in Bi-Sr-Ca-Cu or (Bi,Pb)-Sr-Ca-Cu in relation to blending/composition, consisting as a superconducting phase of mainly a 2212 phase and non-superconducting phases in relation to the crystal structure, covering the raw material with a metal sheath, and performing deformation processing and heat treatment on the composite.Type: GrantFiled: August 1, 1994Date of Patent: September 23, 1997Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kenichi Sato, Takeshi Hikata
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Patent number: 5661112Abstract: Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.Type: GrantFiled: July 22, 1988Date of Patent: August 26, 1997Inventors: Shinichiro Hatta, Hidetaka Higashino, Kumiko Hirochi, Hideaki Adachi
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Patent number: 5656380Abstract: A superconductive article is made from interwoven superconductive, metallic tapes. The interwoven tapes are electrically interconnected by a plurality of superconductive interconnections that extend between the interwoven tapes. Articles of the invention may be formed from tapes comprising superconductive Nb.sub.3 Sn having Nb.sub.3 Sn interconnections.Type: GrantFiled: March 20, 1995Date of Patent: August 12, 1997Assignee: General Electric CompanyInventors: Thomas Robert Raber, Mark Gilbert Benz, Howard Roscoe Hart, Jr.
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Patent number: 5654098Abstract: A superconducting wire saved in weight and enhanced in mechanical properties is provided without damaging electric and thermal characteristics as an Al stabilizer, and further a method for producing the same, a high strength Al sintered alloy and powders used for the process are provided. A superconducting wire comprising an Al alloy of a high purity Al in which a small amount of ceramic ultrafine particles are dispersed and superconducting filaments embedded in the Al alloy, in which a large number of the ceramic ultrafine particles are dispersed in the area of 1 .mu.m.sup.2, and the areas of 1 .mu.m.sup.2 in which a large number of the ceramic ultrafine particles are dispersed, are formed over nearly the whole of the alloy.Type: GrantFiled: June 7, 1996Date of Patent: August 5, 1997Assignee: Hitachi, Ltd.Inventors: Yasuhisa Aono, Fumio Iida, Shinzo Ikeda, Takahiko Kato, Masakiyo Izumiya, Hideyo Kodama
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Patent number: 5650376Abstract: A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.Type: GrantFiled: November 6, 1995Date of Patent: July 22, 1997Assignee: International Superconductivity Technology CenterInventors: Massoud Badaye, Tadataka Morishita, Youichi Enomoto, Shoji Tanaka
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Patent number: 5637260Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.Type: GrantFiled: June 7, 1995Date of Patent: June 10, 1997Assignee: Sumitomo Electric Industries, Ltd.Inventors: Nobuyuki Okuda, Takashi Uemura, Yoshinobu Ueba, Koji Tada, Kengo Ohkura, Hirokazu Kugai
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Patent number: 5635453Abstract: A superconducting thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. A high temperature superconducting layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.Type: GrantFiled: December 23, 1994Date of Patent: June 3, 1997Assignee: Neocera, Inc.Inventors: Alberto Pique, Kolagani S. Harshavardhan, Thirumalai Venkatesan
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Patent number: 5627140Abstract: Enhanced flux pinning in superconductors is achieved by embedding carbon nanotubes into a superconducting matrix. The carbon nanotubes simulate the structure, size and shape of heavy ion induced columnar defects in a superconductor such as Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8+x. The nanotubes survive at treatment temperatures of up to approximately 800.degree. C. both in oxygen containing and in inert atmospheres. The superconducting matrix with nanotubes is heat treated at a lower temperature than the temperature used to treat the best case pure superconductor material.Type: GrantFiled: May 19, 1995Date of Patent: May 6, 1997Assignees: NEC Research Institute, Inc., Florida State UniversityInventors: Kristian Fossheim, Thomas W. Ebbesen
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Patent number: 5620798Abstract: A new design for an aluminum stabilized superconductor which embeds the superconducting cable within a high purity aluminum stabilizer. This stabilizer is, in turn, partially surrounded by an aluminum alloy sheath. The aluminum alloy sheath is constructed and arranged so that at least one exterior surface of the stabilizer is open for exposure to a coolant. Preferably, this open exterior surface of the stabilizer will be knurled for greater cooling efficiency.Type: GrantFiled: May 17, 1995Date of Patent: April 15, 1997Assignee: The Babcock & Wilcox CompanyInventors: Xianrui Huang, Gregory A. Lehmann, Yury Lvovsky, Ronald G. Wood
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Patent number: 5593951Abstract: An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.Type: GrantFiled: May 18, 1995Date of Patent: January 14, 1997Assignee: International Business Machines CorporationInventor: Franz J. Himpsel
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Patent number: 5589281Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.Type: GrantFiled: February 23, 1995Date of Patent: December 31, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Nobuyuki Okuda, Takashi Uemura, Yoshinobu Ueba, Koji Tada, Kengo Ohkura, Hirokazu Kugai
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Patent number: 5574001Abstract: A superconductive lead assembly for a superconductive device (e.g., magnet) cooled by a cryocooler coldhead having first and second stages. A first ceramic superconductive lead has a first end flexibly, dielectrically, and thermally connected to the first stage and a second end flexibly, dielectrically, and thermally connected to the second stage. A jacket of open cell material (e.g., polystyrene foam) is in general surrounding compressive contact with the first ceramic superconductive lead, and a rigid support tube generally surrounds the jacket. This protects the first ceramic superconductive lead against shock and vibration while in the device. The rigid support tube has a first end and a second end, with the second end thermally connectable to the second stage.Type: GrantFiled: May 11, 1995Date of Patent: November 12, 1996Assignee: General Electric CompanyInventors: Robert A. Ackermann, Kenneth G. Herd, Evangelos T. Laskaris, Richard A. Ranze
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Patent number: 5573861Abstract: The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30.degree. K. or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9-99.9999 wt %. The crystal structure consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of <111> or <100> or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of <111> and/or <100>, or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.Type: GrantFiled: July 6, 1993Date of Patent: November 12, 1996Assignees: Sumitomo Chemical Co., Ltd., The Texas A & M University SystemsInventors: Akihiko Takahashi, Hitoshi Yasuda, Karl T. Hartwig, Lacy C. McDonald, Hong Zou
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Patent number: 5571602Abstract: A superconducting magnet shield includes a plurality of overlapping NbTi sheets welded together with a plurality of welds extending along elongated parallel slots in the overlap region with the slots extending in the direction of superconducting current flow.Type: GrantFiled: December 29, 1994Date of Patent: November 5, 1996Assignee: General Electric CompanyInventors: Phillip W. Eckels, Delton A. Grey, Jr., Christopher G. King, Anthony Mantone, O'Neil T. McClam, Granville G. Ward, Jr.
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Patent number: 5571606Abstract: A superconductive lead assembly for a superconductive device (e.g., magnet) cooled by a cryocooler coldhead having first and second stages. A first ceramic superconductive lead has a first end flexibly, dielectrically, and thermally connected to the first stage and a second end flexibly, dielectrically, and thermally connected to the second stage. A jacket of open cell material (e.g., polystyrene foam) is in general surrounding compressive contact with the first ceramic superconductive lead, and a rigid support tube generally surrounds the jacket. This protects the first ceramic superconductive lead against shock and vibration while in the device. The rigid support tube has a first end and a second end, with the second end thermally connectable to the second stage.Type: GrantFiled: May 12, 1995Date of Patent: November 5, 1996Assignee: General Electric CompanyInventors: Robert A. Ackermann, Kenneth G. Herd, Evangelos T. Laskaris, Richard A. Ranze
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Patent number: 5567674Abstract: A thin film of oxide superconductor consisting of more than two portions (1, 11, 12) each possessing a predetermined crystal orientation and deposited on a common surface of a substrate (2). At least one selected portion (10) of thin film of oxide superconductor is deposited on a thin under-layer (4, 100) which facilitates crystal growth of selected portions and which is deposited previously on the substrate. The selected portions (10) may consist of a-axis oriented thin film portions while non-selected portions (11, 12) may consists of c-axis oriented thin film portions. The thin under-layer can be a buffer layer (4) or a very thin film (100) of oxide superconductor.Type: GrantFiled: June 7, 1995Date of Patent: October 22, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hiroshi Inada, Michitomo Iiyama
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Patent number: 5554448Abstract: Disclosed herein is a wire for an Nb.sub.3 X superconducting wire, which is improved in workability and soundness of a diffusion barrier layer without increasing the diffusion barrier layer in thickness. This wire for an Nb.sub.3 X superconducting wire comprises a wire which is prepared by superposing and winding up a first sheet consisting of pure Nb or an Nb alloy and a second sheet consisting of metal atoms X, reacting with Nb for forming a compound exhibiting superconductivity, or an X alloy, a stabilizing material layer which is provided to enclose the wire, and a diffusion barrier layer which is provided between an outer surface of the wire and an inner surface of the stabilizing material layer for preventing the metal atoms X from being diffused in the stabilizing material layer, and the diffusion barrier layer is made of a metal material having larger tensile strength than that of the first sheet. It is possible to obtain a high-performance Nb.sub.Type: GrantFiled: February 17, 1994Date of Patent: September 10, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yuichi Yamada, Naoki Ayai
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Patent number: 5554585Abstract: A lanthanum aluminate (LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also be used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.Type: GrantFiled: November 4, 1994Date of Patent: September 10, 1996Assignee: TRW Inc.Inventors: Randy W. Simon, Christine E. Platt, Alfred E. Lee, Gregory S. Lee
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Patent number: 5552211Abstract: A superconductive lead assembly for a superconductive device (e.g., magnet) cooled by a cryocooler coldhead having first and second stages. A first ceramic superconductive lead has a first end flexibly, dielectrically, and thermally connected to the first stage and a second end flexibly, dielectrically, and thermally connected to the second stage. A jacket of open cell material (e.g., polystyrene foam) is in general surrounding compressive contact with the first ceramic superconductive lead, and a rigid support tube generally surrounds the jacket. This protects the first ceramic superconductive lead against shock and vibration while in the device. The rigid support tube has a first end and a second end, with the second end thermally connectable to the second stage.Type: GrantFiled: May 12, 1995Date of Patent: September 3, 1996Assignee: General Electric CompanyInventors: Robert A. Ackermann, Kenneth G. Herd, Evangelos T. Laskaris, Richard A. Ranze
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Patent number: 5545611Abstract: An oxide superconductor thin film is formed on a substrate by emitting molecular beams of constituent elements of the oxide superconductor to the substrate under high vacuum, wherein at first a molecular beam of one of the constituent elements of the oxide superconductor, of which an oxide thin film can be deposited so as to have a smooth surface, is emitted so as to form the oxide thin film of one or two unit cells. And then, all the molecular beams of constituent elements of the oxide superconductor are emitted to the oxide thin film so as to form the oxide superconductor thin film.Type: GrantFiled: March 31, 1995Date of Patent: August 13, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventor: Takao Nakamura
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Patent number: 5545612Abstract: A superconductor element includes a first layer of an oxide superconductor, a second layer of an insulator, semiconductor, or metal, and an interlayer interposed between the first and second layers and formed of AgO.sub.x (where in 0<.times.< 1/2) .Type: GrantFiled: May 1, 1995Date of Patent: August 13, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Mizushima, Jiro Yoshida, Koh-ichi Kubo
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Patent number: 5545610Abstract: An oxide-based superconductor ccmprising Tl, Pb, Sr, Ca and Cu or Tl, Pb, Ba, Sr, Ca and Cu, prepared by subjecting a low melting point composition comprising the superconductor-constituting elements and a solid composition comprising the superconductor-constituting elements, prepared in advance, to reaction under melting conditions for the low melting point composition, has distinguished current pass characteristics in a high magnetic field due to improvement of electric contact among grains through reduction of non-superconductor phase, increase in crystal grain sizes (reduction of crystal boundaries), orientation of crystal and cleaning of crystal boundaries.Type: GrantFiled: September 2, 1993Date of Patent: August 13, 1996Assignee: Hitachi, Ltd.Inventors: Kazutoshi Higashiyama, Toshiya Doi, Takesi Ozawa, Seizi Takeuchi, Tomoichi Kamo, Shinpei Matsuda, Yutaka Yoshida
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Patent number: 5538795Abstract: A multilayer structure has a selectable, (i) propagating reaction front velocity V, (ii) reaction initiation temperature attained by application of external energy and (iii) amount of energy delivered by a reaction of alternating unreacted layers of the multilayer structure. Because V is selectable and controllable, a variety of different applications for the multilayer structures are possible, including but not limited to their use as ignitors, in joining applications, in fabrication of new materials, as smart materials and in medical applications and devices. The multilayer structure has a period D, and an energy release rate constant K. Two or more alternating unreacted layers are made of different materials and separated by reacted zones. The period D is equal to a sum of the widths of each single alternating reaction layer of a particular material, and also includes a sum of reacted zone widths, t.sub.i, in the period D.Type: GrantFiled: July 15, 1994Date of Patent: July 23, 1996Assignee: The Regents of the University of CaliforniaInventors: Troy W. Barbee, Jr., Timothy Weihs
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Patent number: 5538942Abstract: A superconducting magnet coil is produced by winding a superconducting wire to form a coil; impregnating the coil with a curable resin composition of low viscosity which contains for example at least one epoxy resin selected from the group consisting of diglycidyl ether of bisphenol A, diglycidyl ether of bisphenol F and diglycidyl ether of bisphenol AF, all having a number-average molecular weight of 350-1,000, a flexibilizer and a curing catalyst, to obtain a curable-resin composition-impregnated coil; and heating the curable-resin-composition-impregnated coil to cure the composition.Type: GrantFiled: January 20, 1995Date of Patent: July 23, 1996Assignee: Hitachi, Ltd.Inventors: Toru Koyama, Koo Honjo, Masao Suzuki, Akio Takahashi, Akio Mukoh, Keiji Fukushi, Seiji Numata
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Patent number: 5527765Abstract: A high temperature superconductor and composite structure. A superconductor is disposed on a silver substrate without interdiffusion. The superconductor is formed by heating to a temperature not exceeding the peritectic point of the superconductor material, providing an oxidizing atmosphere while not exceeding the melting point of silver and disposing the superconductor on the silver substrate.Type: GrantFiled: August 23, 1994Date of Patent: June 18, 1996Assignee: Illinois Superconductor CorporationInventors: James D. Hodge, Lori J. Klemptner
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Patent number: 5523283Abstract: A lanthanum aluminate ( LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.Type: GrantFiled: June 23, 1994Date of Patent: June 4, 1996Assignee: TRW Inc.Inventors: Randy W. Simon, Christine E. Platt, Alfred E. Lee, Gregory S. Lee
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Patent number: 5520953Abstract: A method of substantially aligning the superconducting grains of a multi-grained perovskite defect oxide type material, which material includes at least one superconducting phase. In the superconducting phase of such perovskite materials, the unit cells thereof include a plurality of substantially parallel metal oxide planes spacedly disposed along the c axis thereof. The aforementioned alignment of discrete grains of the multi-grained superconducting material occurs along the c axis.Type: GrantFiled: October 29, 1990Date of Patent: May 28, 1996Assignee: Energy Conversion Devices, Inc.Inventors: Standford R. Ovshinsky, Rosa Young
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Patent number: 5508257Abstract: Superconducting composite comprising a matrix made of superconducting sintered mass composed of perovskite type or quasi-perovskite type oxide and metal phase dispersed in the superconducting mass with a proportion of from 10 to 70 volume % with respect to said composite. The metal phase may consist of at least one of Cu, Ag, Au, Pt, Ni and Zn or their alloys. The superconducting sintered mass may be Ba-Y-Cu-O type compound oxide.Type: GrantFiled: February 17, 1994Date of Patent: April 16, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kenichiro Sibata, Takeshi Yamaguchi, Shuji Yazu, Tetsuji Jodai
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Patent number: 5502029Abstract: Superconductors using oxide superconducting materials having pinning centers inside crystal grains are enhanced in transmissible critical current density and allowed to have a high critical current density even in the magnetic field. A superconductor is produced comprising superconducting materials having a high irreversible magnetic field where the c axes of their crystals are oriented in one direction. This can be practically realized by heat-treating a superconducting material having the composition (Tl.sub.1-X1-X2 Pb.sub.X1 Bi.sub.X2)(Sr.sub.1-X3 Ba.sub.X3).sub.2 Ca.sub.2 Cu.sub.3 O.sub.9+X4 together with Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 having a tendency of growing in the form of plate crystal. Various apparatuses capable of working under cooling with liquid nitrogen let alone with liquid helium and having a high superconducting critical current density even in a high magnetic field can be produced.Type: GrantFiled: January 26, 1994Date of Patent: March 26, 1996Assignee: Hitachi, Ltd.Inventors: Toshiya Doi, Atsuko Soeta, Seizi Takeuchi, Tomoichi Kamo, Shinpei Matsuda
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Patent number: 5496798Abstract: A superconducting tube for shielding magnetic fields including a substrate having a tubular wall, a superconducting layer supported by the substrate, and at least two ring-shaped reinforcing members connected to the radially-outer surface of the tubular wall.Type: GrantFiled: January 18, 1995Date of Patent: March 5, 1996Assignee: NGK Insulators, Ltd.Inventors: Hitoshi Sakai, Hitoshi Yoshida
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Patent number: 5489573Abstract: A method is disclosed for forming polycrystalline thallium system superconductors having high current carrying capacity and high magnetic field behavior. A precursor deposit is formed comprised of silver, in an amount of about 1 to 20 mole percent of total metals in the precursor deposit, and the balance oxides of calcium, barium, and copper in ratios for forming the superconductor. The precursor deposit is annealed in an oxidizing atmosphere, and in the presence of a source of thallous oxide. The source of thallous oxide is heated to a first temperature selected to incorporate thallium into the deposit in an amount of about 6 to 22 mole percent of metals in the superconductor, and the precursor deposit is heated to a second temperature to form the superconductor.Type: GrantFiled: August 16, 1994Date of Patent: February 6, 1996Assignee: General Electric CompanyInventors: John A. DeLuca, Pamela L. Karas
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Patent number: 5476719Abstract: A multi-layer microstrip structure includes a substrate and a first superconducting layer deposited on the substrate. A first dielectric layer, made at least partially of benzocyclobutene (BCB), is deposited on the first superconducting layer. Additional superconducting dielectric and superconducting layers can be employed. Preferably the superconducting layers are made from niobium. The multilayer microstrip structure is ideally suited for use in passive circuit components of microwave circuits and in multi-chip modules.Type: GrantFiled: August 17, 1994Date of Patent: December 19, 1995Assignee: TRW Inc.Inventors: Robert D. Sandell, Andrew D. Smith
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Patent number: 5474834Abstract: A circuit sub-assembly as a mounting for an electronic component such as Josephson device, i.e., a superconducting element, comprises a ceramic insulating substrate, an oxygen-shielding barrier layer formed on the insulating substrate, and a circuit film of niobium, as a superconducting material formed on the barrier layer according to a desired pattern. The barrier layer prevents oxidation of the circuit layer by shielding it from oxygen present in the insulating substrate. Due to the barrier layer, the circuit film is scarcely subject to superconductivity-impairing oxidation. The circuit film is thus capable of high-speed electronic signal conduction.Type: GrantFiled: June 9, 1994Date of Patent: December 12, 1995Assignee: Kyocera CorporationInventors: Shigeo Tanahashi, Takanori Kubo, Kazuhiro Kawabata
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Patent number: 5464812Abstract: A thin film of oxide superconductor consisting of more than two portions (10, 11, 12) each possessing a predetermined crystal orientation and deposited on a common surface of a substrate (2). At least one selected portion (10) of the thin film of oxide superconductor is deposited on a thin under-layer (4, 100) which facilitates crystal growth of the selected portion and which is deposited previously on the substrate. The selected portions (10) may consist of a-axis oriented thin film portions while non-selected portions (11, 12) may consists of c-axis oriented thin film portions. The thin under-layer can be a buffer layer (4) or a very thin film (100) of oxide superconductor.Type: GrantFiled: February 24, 1994Date of Patent: November 7, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hiroshi Inada, Michitomo Iiyama
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Patent number: 5447906Abstract: Superconducting transition metal oxide films are provided which exhibit very high onsets of superconductivity and superconductivity at temperatures in excess of 40.degree. K. These films are produced by vapor deposition processes using pure metal sources for the metals in the superconducting compositions, where the metals include multi-valent nonmagnetic transition metals, rare earth elements and/or rare earth-like elements and alkaline earth elements. The substrate is exposed to oxygen during vapor deposition, and, after formation of the film, there is at least one annealing step in an oxygen ambient and slow cooling over several hours to room temperature. The substrates chosen are not critical as long as they are not adversely reactive with the superconducting oxide film. Transition metals include Cu, Ni, Ti and V, while the rare earth-like elements include Y, Sc and La. The alkaline earth elements include Ca, Ba and Sr.Type: GrantFiled: June 23, 1994Date of Patent: September 5, 1995Assignee: International Business Machines CorporationInventors: Praveen Chaudhari, Richard J. Gambino, Roger H. Koch, James A. Lacey, Robert B. Laibowitz, Joseph M. Viggiano
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Patent number: 5447908Abstract: An outer surface of a superconducting thin film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as MgO and SrTiO.sub.3 is protected with a protective layer which is composed of amorphous inorganic material such as inorganic glass, amorphous oxide.Type: GrantFiled: August 15, 1994Date of Patent: September 5, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideo Itozaki, Saburo Tanaka, Nobuhiko Fujita, Shuji Yazu, Tetsuji Jodai
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Patent number: 5434126Abstract: A thin-film superconductor includes a substrate, a ferroelectric film, and a superconducting oxide film. The ferroelectric film extends on the substrate. The ferroelectric film is made of a crystal contains Bi and O. The superconducting oxide film extends on the ferroelectric film, and containing Bi, Cu, and an alkaline-earth metal element. The superconducting oxide film may contain at least two different alkaline-earth metal elements.Type: GrantFiled: March 25, 1994Date of Patent: July 18, 1995Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yo Ichikawa, Koichi Mizuno, Toshifumi Sato, Hideaki Adachi, Kentaro Setsune
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Patent number: 5430014Abstract: c-axis oriented YBa.sub.2 Cu.sub.3 O.sub.7 layers are grown with intervening SrTiO.sub.3 layers bridged over steps at which there is a transformation to a-axis crystal-oriented growth. The multilayer superconductor has YBa.sub.2 Cu.sub.3 O.sub.7 layers which are not thicker than 500 nm while the intervening layers of SrTiO.sub.3 have thicknesses of 20 to 30 nm.Type: GrantFiled: October 30, 1992Date of Patent: July 4, 1995Assignee: Forschungszentrum Julich GmbHInventors: Helmut Soltner, Ulrich Poppe, Knut Urban
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Patent number: 5428005Abstract: A superconducting thin film of compound oxide material deposited on a substrate, comprising a plurality of a-axis or b-axis oriented unit layers (2) and a plurality of c-axis oriented unit layers (1), each unit layer (1, 2) being made of the compound oxide material and being laminated alternately one over another on the substrate (3).Type: GrantFiled: June 14, 1994Date of Patent: June 27, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takashi Matsuura, Keizo Harada, Hidenori Nakanishi, Hideo Itozaki
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Patent number: 5424282Abstract: A process for producing a composite oxide superconducting wire is disclosed, which comprises the steps of compacting material powder for an oxide superconductor in a noble metal pipe; heating the metal pipe filled with the material powder at a temperature ranging between an upper limit corresponding to the lowest melting point of any one of constituent components in the material powder and a lower limit which is lower by 100.degree. C. than said upper limit to sinter the material powder and cooling the product at a cooling velocity of less than 50.degree. C./min, and further including a series of wire-drawing, annealing and sintering steps. Furthermore, an intermediate layer of noble metal can be interposed between the oxide superconductor and the metal pipe.Type: GrantFiled: February 22, 1994Date of Patent: June 13, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Susumu Yamamoto, Teruyuki Murai, Nozomu Kawabe, Tomoyuki Awazu, Shuji Yazu, Tetsuji Jodai
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Patent number: 5420103Abstract: A LnBaCuO-series superconducting thin film is provided over a surface of a substrate of Y.sub.2 O.sub.3 single crystal to form a composite superconductor. Ln stands for Y or a lanthanoid element. The composite superconductor has an improved interfacial diffusion.Type: GrantFiled: August 19, 1993Date of Patent: May 30, 1995Assignee: International Superconductivity Technology CenterInventors: Akira Oishi, Tadataka Morishita
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Patent number: 5419974Abstract: A component 10 for making Al5 Nb.sub.3 Sn superconducting wire is of plane-filling cross-section after removing temporary additions 6, 7. It consists of a central pillar 1 of aluminium (later replaced by tin) surrounded by a two-deep array of polygonal copper columns 2/2a containing niobium rods. Many (e.g. 61) components 10 are stacked together and extruded. The niobium rods adopt and retain a uniform distribution with minimum intervening material. On heat-treatment of the whole, the tin diffuses over a relatively short path and hence consistently into the rods, whereby there is formed a kilofilament Nb.sub.3 Sn wire.Type: GrantFiled: January 5, 1993Date of Patent: May 30, 1995Assignee: British Technology Group Ltd.Inventors: Colin R. Walters, Jan E. Evetts, Francis J. V. Farmer, Thomas J. Hawksley
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Patent number: 5420102Abstract: A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.Type: GrantFiled: August 1, 1994Date of Patent: May 30, 1995Assignee: Neocera, Inc.Inventors: Kolagani S. Harshavardhan, Thirumalai Venkatesan
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Patent number: 5416062Abstract: A thin film of oxide superconductor deposited on a single crystal substrate of silicon wafer. A buffer layer of (100) or (110) oriented Ln.sub.2 O.sub.3, in which Ln stands for Y or lanthanide elements is interposed between the thin film of oxide superconductor and the silicon wafer. A surface of silicon wafer is preferably cleaned satisfactorily by heat-treatment in vacuum before the buffer layer is deposited. An under-layer of metal oxide; ZrO.sub.2, YSZ or metal Y, Er is preferably interposed between the Ln.sub.2 O.sub.3 buffer layer and the silicon wafer.Type: GrantFiled: December 27, 1993Date of Patent: May 16, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Keizo Harada, Hidenori Nakanishi, Hideo Itozaki
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Patent number: 5407906Abstract: A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.Type: GrantFiled: February 10, 1994Date of Patent: April 18, 1995Assignee: The Texas A&M University SystemInventors: Raghvendra K. Pandey, Kanwal K. Raina, Narayanan Solayappan