Abstract: A positive photoresist composition is disclosed, which comprises an alkali-soluble resin, at least one of 1,2-naphthoquinonediazidesulfonic monoesters of specific polyhydroxy compounds, and at least one of 1,2-naphthoquinonediazidesulfonic ester of specific polyhydroxy compounds. The positive photoresist composition exhibits remarkably improved sensitivity and resolution, and broad development latitude regardless of the film thickness, and further, low film thickness dependence of resist performances.

Abstract: A photosensitive resin composition comprising an alkali-soluble resin, a quinonediazide-type photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) with 2 formaldehyde (a) and at least one carbonyl compound (b) of the following formula (B), in which the mixing ratio of the formaldehyde (a) to the carbonyl compound (b) is within a range of from 1/99 to 99/1 in terms of the molar ratio of (a)/(b), and the alkaline soluble resin has partial structures of the following formula (C), in which the weight ratio of repeating units (.beta.) wherein m is from 1 to 5, to repeating units (.alpha.) wherein m is 0, i.e. the weight ratio of (.beta.)/(.alpha.), is at most 0.25: ##STR1## wherein R.sup.1 is a group of the formula R.sup.2, OR.sup.3, COOR.sup.4 or CH.sub.2 COOR.sup.5, wherein R.sup.2 is a C.sub.1-4 alkyl group, each of R.sup.3, R.sup.4 and R.sup.

Abstract: A positive type or negative type photoresist composition for fine processing having excellent resolution, sensitivity, adhesive-ness and developability comprising:(a) an alkali soluble resin or a resin having anti-alkali dissolution groups in the molecules thereof,(b) a light-sensitive compound, and(c) at least one organic compound selected from the group consisting of organic phosphorus acid compounds and esters thereof in an amount of 0.001 to 10% by weight based on a weight of the resin. In addition, the present invention is directed to an etching method utilizing the positive type or negative type photoresist composition.

Abstract: The present invention provides an image-forming material which comprises a support having thereon, in the following order, (1) a photosensitive composition layer comprising (a) an o-quinonediazide compound, and (b) an additive which reacts with a photoreaction product of the o-quinonediazide compound on heating to produce an alkali-insoluble matter, and (2) a water-soluble high molecular compound layer or a silicone rubber layer. The present invention also provides an image formation process which comprises exposing an entire surface of the image-forming material to light rays which render the o-quinonediazide compound soluble in an alkaline developer, imagewise heating the image-forming material, and then developing the image forming material with an alkaline developer to remove those areas which have not been heated.

Abstract: The present invention relates to a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, and a developer for the positive electron beam resist, containing specific amounts of alkali metal ions, weak acid radical ions and a water soluble organic compound. The present invention can provide a positive electron beam resist composition with a novolak and a quinonediazide as main ingredients, excellent in dry etching resistance and resolution, and it if is used, a fine pattern can be obtained at high sensitivity especially when the developer of the present invention is used.

Abstract: A positive photoresist composition is described, which comprises an alkali-soluble resin and 1,2-naphthoquinone-diazido-5-(and/or -4-)sulfonate of a polyhydroxy compound represented by the following formula (I): ##STR1## wherein R.sub.1 to R.sub.11 are the same or different and each represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an alkoxyl group, an acyl group or a cycloalkyl group, provided that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group; A represents -CH(R.sub.12)-, in which R.sub.12 represents a hydrogen atom or an alkyl group; and m represents 2 or 3.

Abstract: A photoresist composition comprising (a) a difficultly alkali-soluble special resin, (b) a photo-sensitive compound capable of generating a carboxylic acid, and (c) a solvent, is effective for pattern formation using deep ultraviolet light, KrF excimer laser beams, etc.

Abstract: A positive type anionic electrodeposition photoresist composition comprising, as a main component, a dispersion obtained by neutralizing, with a base, a mixture comprising:(A) an acrylic resin containing carboxyl group(s) and hydroxyl group(s),(B) a vinylphenol resin containing a hydroxystyrene unit in an amount of at least 25% by weight based on the resin, and(C) an ester between a polyhydroxybenzophenone and 1,2-naphthoquinone diazide sulfonic acid or benzoquinone diazide sulfonic acid, and dispersing the resulting neutralization product in water.This composition is superior in running stability during electrodeposition and is useful for formation of highly reliable resist pattern or conductor pattern.

Abstract: Disclosed are an organic silicon compound having a repeating unit represented by general formula (I) shown below, a resist, a thermal polymerization composition and a photopolymerization composition containing the organic silicon compound, ##STR1## wherein R.sup.1 is a t-butyl group or a tetrahydropyranyl group, R.sup.2 is an hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 1 to 24 carbon atoms, or a substituted or unsubstituted aralkyl having 7 to 24 carbon atoms, R.sup.3 is a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 24 carbon atoms or an alkoxyl group, and k represents an integer from 0 to 4.

Abstract: A positive photoresist composition is disclosed, which comprises prescribed amounts of an alkali-soluble novolak resin which is obtained from prescribed amounts of m- and p-cresols and at least one xylenol selected from 2,3-, 3,4- and 3,5-xylenols and an aldehyde, a 1,2-quinonediazide compound which is an esterified product of a polyhydroxy compound having from 3 to 7 phenolic hydroxyl groups in the molecule with 1,2-naphthoquinonediazido-5(and/or 4)-sulfonyl chloride(s) and an alkali dissolution accelerator which is a polyhydroxy compound having a molecular weight of 1,000 or less and from 2 to 7 phenolic hydroxyl groups in the molecule.

Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.

Abstract: A photosensitizer comprising a trishydroxyphenylethane 80/20 to 50/50 2,1,5-/2,1,4-diazonaphthoquinone sulfonate, and a trishydroxybenzophenone 0/100 to 20/80 2,1,5-/2,1,4-diazonaphthoquinone sulfate, and a photoresist composition containing such photosensitizer, the photosensitizer being present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition; and a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition.

Abstract: There is provided a positive working photosensitive composition suitable for photosensitive lithographic printing plate or photoresist for fine processing, which comprises a quinonediazide ester compound having the structure characterized by containing in the same molecule both quinonediazide structure and N-sulfonylamide [--C(.dbd.O)--NHSO.sub.2 --] or sulfonamide [--NHSO.sub.2 --] structure which are positioned independently of each other.

Abstract: The present invention provides a positive-working photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a specific water-insoluble alkali-soluble low molecular compound, wherein the high-performance liquid chromatography of the ester with an ultraviolet ray at 254 nm shows that the patterns corresponding to the diester components and complete ester component of the ester each fall within the specific range and a positive-working photoresist composition comprising a water-insoluble alkali-soluble resin, a water-insoluble alkali-soluble low molecular compound, and an ionization-sensitive radioactive compound which comprises a mixture of a naphthoquinone-diazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having three phenolic hydroxyl groups as an ionization-sensitive radioactive compound (A) and a naphthoquinonediazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having four phenoli

Abstract: A method for patterning a photoresist film, capable of preventing a notching phenomenon occurring upon forming a pattern of the photoresist film having a single layer structure and thereby accurately forming a pattern of a metal wiring or a gate with a desired dimension even on a layer exhibiting a severe topology by removing a portion of the photoresist film coated over the layer having a severe topology up to a depth corresponding to 30% or below of the thickness of the photoresist film to form a recess, forming an planarized inorganic material layer on the recess, and selectively removing a predetermined portion of the photoresist film under a condition that the inorganic material layer is used as a mask.

Abstract: Proposed is an improved positive-working photoresist composition for use in the photolithographic patterning works for the manufacture of semiconductor devices, which is capable of giving a patterned resist layer on a substrate surface having excellent resolution and heat resistance without formation of scum in the development treatment. The photoresist composition comprises: (a) an alkali-soluble novolac resin as a film-forming ingredient and (b) a naphthoquinone diazide group-containing compound as a photosensitizing ingredient, of which the novolac resin is a condensation product of a phenolic compound and an aldehyde compound, the condensation reaction being undertaken in a solvent system containing, in addition to water, .gamma.-butyrolactone or a combination of .gamma.-butyrolactone and a propyleneglycol monoalkyl ether in a limited proportion.

Abstract: Disclosed is an improved positive-working photoresist composition comprising an alkali-soluble resin as a film-forming agent and a quinone diazide group-containing compound as a photosensitive agent. The most characteristic feature of the inventive composition consists in the unique formulation of the alkali-soluble resin which is a combination of two or three kinds of novolac resins selected from novolac resins (a), (b1) or (b2) and (c1) or (c2), each of which is characterized by the unique formulation of the phenolic compounds as a mixture to be subjected to a condensation reaction with an aldehyde compound to form the novolac resin.

Abstract: Disclosed herein is a polyamic acid composition which comprises an aromatic carboxylic acid compound having phenolic hydroxyl groups, polyamic acid, and a photosensitizer made of a diazide compound, and which can form a polyimide film pattern having a high resolution and capable of firmly adhering to a substrate.

Abstract: Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.

Abstract: A novel positive type photoresist composition is provided, comprising an alkali-soluble novolak resin obtained by the condensation of substituted or unsubstituted phenols and aldehydes in the presence of a silica-magnesia solid catalyst and a light-sensitive material containing 1,2-naphthoquinone-diazido-5-(and/or -4-) sulfonate as main component.

Abstract: The invention relates to a non-continuous matte layer that can be used with a recording material having a substrate and a radiation-sensitive layer which contains a 1,2-naphthoquinone-2-diazide and an organic, polymeric binder which is insoluble in water but soluble in aqueous alkaline solutions. This matte layer comprises 100 to 10,000 particles per square centimeter which have a mean diameter of less than 40 .mu.m and a maximum diameter of less than 80 .mu.m and a mean height of 2 to 6 .mu.m and a maximum height of 10 .mu.m, and contains a resin which has up to 0.80 mmol of acid groups and/or salt groups per gram. The matte layer is obtained by spraying on and drying an aqueous, anionically or anionically/nonionically stabilized dispersion of the resin.

Abstract: Disclosed is a positive-working photoresist composition used in the photolithographic patterning work for the manufacture of various electronic devices such as VLSIs having improved characteristics, in particular, in respect of the halation-preventing effect. In addition to the conventional ingredients of (a) an alkali-soluble novolac resin as a film-forming agent and (b) a naphthoquinonediazide group-containing compound as a photosensitizing agent, the composition is formulated by the admixture of a specific amount of (c) a halation-preventing agent which is a combination of, one, (c1) a 4,4'-bis(dialkylamino) benzophenone compound and, the other, (c2) a compound selected from the group consisting of polyhydroxy benzophenone compounds, amino- and hydroxy-containing benzophenone compounds and 4-pyrazolylazo compounds in a specific weight proportion of (c1):(c2).

Abstract: A photosensitive resin composition which comprises (A) a polyimide resin precursor of recurring units of a specific type, (B) at least one member selected from the group consisting of photosensitive diazoquinone compounds of the following formulas ##STR1## wherein R.sup.2 represents an organic group having from 1 to 50 carbon atoms, i is an integer of from 1 to 7, and i is an integer of from 1 to 7, and (C) a phenolic novolac resin. A method for forming a polyimide film pattern on various types of substrates is also described wherein a composition film is alkali-developed after imagewise exposure and cured to provide a heat-resistant polyimide film pattern suitable for protecting the substrate.

Abstract: An essentially aromatic alkali soluble novolak resin comprising the product resulting from the acid condensation of an aromatic aldehyde and a phenol where the resin has a molecular weight in excess of 1500 and a glass transition temperature in excess of 125.degree. C. If desired, the aromatic novolak resin may be blended with a conventional novolak resin to regulate the glass transition temperature of the resin. The aromatic novolak resin and blends formed therefrom are especially suitable as coating resins and are useful for the formation of photoresist coating compositions.

Abstract: A photoresist composition is disclosed containing an alkali-soluble resin and a photosensitive substance obtained by reaction of a polyhydroxy compound and (a) a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride(s), said photosensitive substance being a mixture of photosensitive compounds (1) to (3):(1) a photosensitive compound having at least one hydroxyl group per molecule and having a number ratio of 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride sulfonate groups to hydroxyl groups within the range of from 3 to 20, contained in the photosensitive substance in an amount of 50 wt % or more;(2) a photosensitive compound where all the hydroxyl groups in the polyhydroxy compound have been 1,2-naphthoquinonediazidosulfonyl-esterified, contained in the photosensitive substance in an amount of 30 wt % to 0 wt %; and(3) a photosensitive compound having three or more hydroxyl groups which have not been 1,2-naphthoquinonediazidosulfonyl-esterified per molecule, contained in the photosensitive subs

Abstract: The invention relates to 2,3,4-trihydroxy-3'-methyl-, -ethyl-, -propyl- or -isopropylbenzophenone which is completely esterified with (1,2-naphthoquinone 2-diazide)-4-sulfonic acid and/or (7-methoxy-1,2-naphthoquinone 2-diazide)-4-sulfonic acid, a radiation-sensitive mixture prepared therewith, and a radiation-sensitive recording material comprising a substrate and a radiation-sensitive layer which is composed of the mixture according to the invention.

Abstract: A radiation sensitive resin composition which comprises (A) a copolymer represented by the following general formula and (B) a radiation sensitive acid generator and, if necessary, (C) an alkali-soluble resin: ##STR1## wherein R represents a hydrogen atom or a methyl group and m and n are integers representing the numbers of the respective recurring units and satisfying the relations 0.1.gtoreq.m/(m+n)<0.6 and 0.4<n/(m+n).ltoreq.0.9. Said radiation sensitive resin composition is excellent in resolution and pattern profile and also excellent in sensitivity and developability and is useful as a chemically amplified resist good in contrast and heat resistance.

Abstract: A positive working photoresist composition sensitive to radiation, having high resolving power, high sensitivity, and excellent storage stability, and further forming a pattern capable of accurately reproducing a mask size in a wide range of photomask line width. The present invention has been obtained by a composition containing at least one of a 1,2-napthoquinonediazido-5-sulfonic acid ester of a polyhydroxy compound and a 1,2-napthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound in combination with at least one alkali-soluble resin.

Abstract: The present invention provides a composition having sensitivity to light or radiation. The composition comprises a polymer having a siloxane-bond structure which undergoes polymerization reaction when irridiated with light or radiation, and a sensitizing agent. The present invention also provides a process for forming a pattern, preparing a photomask and a semiconductor device by using the composition of the present invention.

Abstract: Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formulae (IB) and (IIB): ##STR1## wherein the photosensitive compound is used in a radiation sensitive composition and a process for forming a positive patterned image.

Abstract: The present invention provides a composition having sensitivity to light or radiation. The composition comprises a polymer having a siloxane-bond structure which undergoes polymerization reaction when irridiated with light or radiation, and a sensitizing agent. The present invention also provides a process for forming a pattern, preparing a photomask and a semiconductor device by using the composition of the present invention.

Abstract: Changing (varying, irregular) resist thickness on semiconductor wafers having irregular top surface topography or having different island sizes, affects the percent reflectance (and absorption efficiency) of incident photolithographic light, and consequently the critical dimensions of underlying features being formed (e.g., polysilicon gates). A low solvent content resist solution that can be applied as an aerosol provides a more uniform thickness resist film, eliminating or diminishing photoresist thickness variations. A top antireflective coating (TAR) also aids in uniformizing reflectance, despite resist thickness variations. The two techniques can be used alone, or together. Hence, better control over underlying gate size can be effected, without differential biasing.

Abstract: The present invention provides methods for producing photoresist compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such photoresist compositions.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formulae (IB) and (IIB): ##STR1## wherein the photosensitive compound is used in a positive photoresist composition and process for forming patterned image. Further the invention is drawn to a positive photoresist composition comprising an alkali-soluble resin and quinone diazide sulfonic acid triesters and diesters characterized by their HPLC peak areas.

Abstract: An alkali soluble resin, preferably a phenolic resin, having a portion of its phenolic hydroxyl groups reacted to form a blocking group inert to acid or base. The polymer is used for the formulation of acid hardening photoresists and the presence of the inert blocking group enables development of an exposed photoresist with a strong developer without formation of microbridges between fine line features.

Abstract: The invention provides a method for forming a photoresist mask on a substrate resistant to reticulation during plasma etching. The method comprises the steps of forming an imaged and developed photoresist coating over an integrated circuit substrate where the photoresist contains an essentially unreacted acid activated cross linking agent, and subjecting said substrate to an etching plasma in a gaseous stream that contains a Lewis acid. Contact of the surface of the photoresist film with the Lewis acid causes cross linking of the surface of the photoresist film during plasma etching with the formation of a reticulation resistant surface layer.

Abstract: A photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a crosslinking agent. The crosslinking agent comprises a water soluble sugar. The present invention also provides a method of making microelectronic structures.

Abstract: Disclosed is a positive photoresist composition comprising an alkali-soluble resin and the 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonate acid ester of a polyhydroxy compound represented by formula (I): ##STR1## wherein R.sub.1 to R.sub.3 may be the same or different and each represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, or an alkoxy group; and m, n and o each represent an integer of from 1 to 3. The photoresist composition has a high resolving power and a less layer thickness reliance of the resolving power, and a wide development latitude, is reluctant to form a development residue, and further has a very excellent storage stability, and does not deposit the photosensitive material and does not form microgels, i.e., shows no increase in the particles, with the passage of time.

Abstract: Disclosed herein is a positive resist composition comprising an alkali-soluble phenolic resin and a photosensitive agent, characterized in that the positive resist composition contains, as the photosensitive agent, the quinonediazide sulfonate of at least one of phenolic compounds represented by the following general formulae (I) and (II): ##STR1## wherein R.sub.1 through R.sub.4 mean individually a hydrogen or halogen atom, a hydroxyl group, an alkyl or alkenyl group having 1-3 carbon atoms, or a hydroxyalkyl group having 1-3 carbon atoms and may be equal to or different from one another, and R.sub.5 denotes a hydrogen atom, an alkyl or alkenyl group having 1-3 carbon atoms, or an aryl group with the proviso that the number of hydroxyl groups is 3 or 4; and ##STR2## wherein R.sub.6 through R.sub.9 mean individually a hydrogen or halogen atom, an alkyl or alkenyl group having 1-3 carbon atoms, or a hydroxyalkyl group having 1-3 carbon atoms and may be equal to or different from one another, and R.sub.

Abstract: A positive-tone photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a dissolution inhibitor. The dissolution inhibitor comprises a compound of Formula I: ##STR1## wherein R.sub.1 is a C.sub.1 -C.sub.20 alkyl, cyclo alkyl, bensyl, phenyl, alkyl substituted cyclo alkyl, alkoxy substituted cyclo alky, alkyl substituted phenyl, alkoxy substituted phenyl, acetoxy substituted phenyl, hydroxy substituted phenyl, t-butyloxycarbonyloxy substituted phenyl, diphenyl alkyl, alkyl substituted diphenyl, alkoxy substituted diphenyl, alkyl substituted diphenyl alkyl, or alkoxy substituted diphenyl alkyl; and R.sub.2 is a C.sub.1 -C.sub.20 alkyl, cyclo alkyl, benzyl, phenyl, alkyl substituted cyclo alkyl, alkoxy substituted cyclo alkyl, alkyl substituted phenyl, alkoxy substituted phenyl, hydroxy substituted phenyl, acetoxy substituted phenyl, or t-butyloxycarbonyloxy substituted phenyl.The present invention also provides a method of making microelectronic structures.

Abstract: The present invention provides a positive type photosensitive anionic electrocoating composition having excellent running stability and highly reliable image formability, and a process for pattern formation using said composition. Said composition comprises, as essential components, a resin (A) containing polyethylene glycol or polypropylene glycol chains each having a substituted or unsubstituted phenyl group at the end and a compound (B) containing at least one quinone diazide sulfone unit, and contains carboxyl groups in an amount of 0.2-3 moles per kg (solid content) of the composition.

Abstract: A positive photoresist composition for super fine working is disclosed, which comprises (a) an alkali-soluble resin and (b) as a photosensitive compound the 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid ester of a polyhydroxy compound represented by formula (I) or (II), wherein in a high-speed liquid chromatography measured using a ultraviolet ray of 254 nm, the pattern of the diester component and the pattern of the complete ester component of said 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid of the polyhydroxy compound shown by formula (I) or (II) are at least 50% and less than 40%, respectively, of the whole pattern areas; ##STR1## wherein R.sub.1 to R.sub.11, which may be the same or different, each represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group, with the proviso that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group, and R.sub.12 to R.sub.

Abstract: A photoresist that is a mixture of the esterification product of an o-quinonediazide compound and a novolak resin and a high molecular weight phenol having from 2 to 5 phenolic groups and at least 4 diazo naphthoquinone groups. The extent of esterification of the novolak resin is up to 20 percent of the hydroxyl groups and the degree of esterification of the phenol is at least 50 percent of the phenolic hydroxyl groups. The preferred novolak resins are the aromatic novolak resin that are the condensation product of a reactive phenol with a bis(hydroxymethyl)phenol or an aromatic aldehyde, each alone or in the presence of a reactive phenol.

Abstract: The invention relates to monomers of the formulae R.sup.1 -SO.sub.2 -N(CO-OR.sup.2)-R3-O-CO-CR.sup.4 =CH.sub.2 and R.sup.1 -N(CO-OR.sup.2) -SO.sub.2 -R.sup.3 -O-CO-CR.sup.4 =CH.sub.2, in which R.sup.1 is a (C.sub.1 -C.sub.20)alkyl, (C.sub.3 -C.sub.10)cycloalkyl, (C.sub.6 -C.sub.14)aryl or (C.sub.7 -C.sub.20)aralkyl radical, individual methylene groups in the radicals containing alkyl being optionally replaced by heteroatoms, R.sup.2 is a (C.sub.3 -C.sub.11)alkyl, C.sub.3 -C.sub.11) alkenyl or (C.sub.7 -C.sub.11)aralkyl radical, R.sup.3 is an unsubstituted or substituted (C.sub.1 -C.sub.6)alkyl, (C.sub.3 -C.sub.6)cycloalkyl, (C.sub.6 -C.sub.14)aryl or (C.sub.7 -C.sub.20)aralkyl radical and R.sup.4 is a hydrogen atom or a methyl group. It further relates to polymers having at least 5 mol % of units with pendent groups of the formula(e) -R.sup.3 -N(CO-OR.sup.2)-SO.sub.2 -R.sup.1 (I) and/or -R.sup.3 -SO.sub.2 -N(CO-OR.sup.2)-R.sup.

Abstract: There are disclosed novel photoresist compositions employing phosphazene compounds as ballast, unabsorbent of light at a band of i-line and g-line and superior in thermal resistance and sensitivity as well as resolution, characterized by introducing photosensitive groups into phosphazene type ballast represented by the following formula I: ##STR1##

Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.

Abstract: A positive-working photoresist composition comprising a cresol novolac resin as the film-forming agent and a quinonediazido group-containing compound as the photosensitizing agent is admixed with a limited amount of a hydroxyalkyl-substituted pyridine compound so that great improvements can be obtained in the adhesive bonding of the resist layer to the substrate surface and in the stability of the composition by storage still without the problem due to the sublimed material from the resist layer during the patterning process.

Abstract: A positive-type photosensitive electrodeposition coating composition comprising a water-soluble or water-dispersible resin having an ionic group and containing at least one modified quinonediazidesulfone unit represented by the following formula (I) or (II) ##STR1## wherein R.sub.1 represents ##STR2## R.sub.2 represents a hydrogen atom, an alkyl group, a cycloalkyl group or an alkyl ether group, andR.sub.3 represents an alkylene group, a cycloalkylene group, an alkylene ether group, a phenylene group which may optionally be substituted with an alkyl group having 1 to 20 carbon atoms, or an alkylene, cycloalkylene or alkylene ether group containing in its chain a phenylene group which may optionally be substituted with an alkyl group having 1 to 20 carbon atoms, in the molecule.

Abstract: A photoresist composition consisting of an acid or base generator, a crosslinking agent activated in the presence of an acid or base and an alkali soluble resin, preferably a phenolic resin, having a portion of its phenolic hydroxyl groups reacted to form a blocking group inert to acid or base. The presence of the inert blocking group enables development of an exposed photoresist with a strong developer without formation of microbridges between fine line features.