Abstract: A silylated polymeric binder, which is soluble or swellable in alkali, bears a plurality of at least one of aliphatic and aromatic hydroxyl groups, at least a portion of which are derivatized by units of the formulae I and II:[(A--B.sub.n).sub.m C]--[(D.sub.o E.sub.p)BC].sub.u (I)and[(D.sub.o E.sub.p)BC].sub.v (II)which are side chains of the polymeric binder, whereinA denotes a silanyl group containing at least 2 silicon atoms in total linked to each other, but not more than 3 silicon atoms linked to each other in an unbranched chain of silicon atoms;B denotes a bridging group;C denotes a functional group which has formed a covalent bond with an aromatic, aliphatic, or cycloaliphatic hydroxyl group of the binder, the group D, or the group E;D denotes a grafted monohydric or polyhydric aliphatic alcohol;E denotes a grafted monohydric or polyhydric aromatic alcohol;n denotes 0 or 1;m denotes 1 or 2; ando, p, u and v each denote 0 or 1.
Type:
Grant
Filed:
January 10, 1991
Date of Patent:
April 27, 1993
Assignee:
Hoechst Aktiengesellschaft
Inventors:
Peter Wilharm, Gerhard Buhr, Juergen Fuchs
Abstract: A positive working photosensitive composition comprising a polymeric compound insoluble in water but soluble in an aqueous alkaline solution and an aromatic sulfonic acid salt of an onium compound. The positive working photosensitive composition having high sensitivity and being capable of forming high-contrast images.
Abstract: A positive resist composition comprising an aromatic group-containing alkali-soluble resin and a compound having an ammonium salt as skeleton, as the main components.
Abstract: The present invention relates to a light-sensitive composition comprising (a) a photo-crosslinkable polymer having a maleimido group at a side chain and (b) a sensitizer such as the following compounds: ##STR1## The present invention provides a light-sensitive composition having very high sensitivity; providing excellent images during only a short exposure time; and being sensitive to light of long wave length.
Abstract: Positive-working photoresist compositions containing 23-27%, based on said composition, of at least one compound of formula (I) ##STR1## wherein one of the substituents X is hydrogen or a group of formula II ##STR2## and the other substituents X are a group of formula II; and 6-11%, based on said composition, of at least one polyhydroxy compound of formula III ##STR3## wherein X is a direct bond, --O--, --S--, --SO.sub.2 --, --CO-- or C(R.sub.6 (R.sub.7)--, and R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are each independently of the other hydrogen, halogen, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 alkoxy or hydroxy, and R.sub.6 and R.sub.7 are each independently of the other hydrogen, --CH.sub.3 or --CF.sub.3.These compositions have particularly good profile contrast and exhibit insignificant fluctuations in line width.
Abstract: A light-sensitive composition is provided comprising (a) an aromatic diazo compound and (b) a cationic dye/borate anion complex.In a preferred embodiment, the cationic dye/anionic borate dye complex is represented by the general formula (I): ##STR1## wherein D.sup.+ represents a cationic dye; and R.sub.1, R.sub.2, R.sub.3 and R.sub.4, which may be the same or different, each represents an unsubstituted or substituted alkyl group, an unsubstituted or substituted aryl group, an unsubstituted or substituted aralkyl group, an unsubstituted or substituted alkenyl group, an unsubstituted or substituted alkynyl group, an unsubstituted or substituted alicyclic group, or an unsubstituted or substituted heterocyclic group.The aromatic diazo compound can be a nonionic diazo compound.The light-sensitive compound can further comprise a radical-polymerizable unsaturated compound.
Abstract: A positively operating radiation-sensitive mixture comprising a binder which is insoluble in water but soluble or at least swellable in aqueous alkaline solution, and as a photoactive component a polyfunctional .alpha.-diazo-.beta.-keto ester of the general formula I ##STR1## in which R.sup.1 denotes an aliphatic, cycloaliphatic or araliphatic or aromatic radical having 4 to 20 carbon atoms, in which individual CH.sub.2 groups can be replaced by oxygen or sulfur atoms or by ##STR2## or NH groups and/or contain keto groups, X denotes an aliphatic, cycloaliphatic, carbocyclic, heterocyclic or araliphatic radical having 2 to 22 carbon atoms, in which individual CH.sub.2 groups can be replaced by oxygen or sulfur atoms or by the groups --NR.sup.2 --, --C(O)--O--, --C(O)--NR.sup.2 --, --C(O)-- ##STR3## --NR.sup.2 --C(O)--NR.sup.3 --, --O--C(O)--NR.sup.2 --, --C(O)-- ##STR4## or --O--C(O)--O--, or CH groups can be replaced by ##STR5## in which R.sup.2 and R.sup.
Type:
Grant
Filed:
January 12, 1990
Date of Patent:
March 30, 1993
Assignee:
Hoechst Aktiengesellschaft
Inventors:
Peter Wilharm, Hans-Joachim Merrem, Georg Pawlowski, Ralph Dammel
Abstract: A trihydroxybenzophenone compound of the formula (I): ##STR1## wherein R.sub.1 is selected from the group consisting of hydroxyl group, halide group, a lower alkyl group having 1 to 4 carbon atoms, and a lower alkoxy group having 1 to 4 carbon atoms.
Type:
Grant
Filed:
February 28, 1991
Date of Patent:
March 23, 1993
Assignee:
OCG Microelectronic Materials, Inc.
Inventors:
Medhat A. Toukhy, Alfred T. Jeffries, III
Abstract: Block phenolic oligomers of the formula (I): ##STR1## These may be reacted alone or with selected phenolic monomers during or after the formation of a phenolic novolak resin thereby said resin having at least one unit of formula (II): ##STR2##
Type:
Grant
Filed:
June 4, 1991
Date of Patent:
March 23, 1993
Assignee:
OCG Microelectronic Materials, Inc.
Inventors:
Alfred T. Jeffries, III, Kenji Honda, Andrew J. Blakeney, Sobhy Tadros
Abstract: A block copolymer novolak resin composition comprising at least one unit of the reaction product of an alkali-soluble phenolic moiety having at least two phenolic nuclei and at least two unsubstituted positions ortho and para to the hydroxyls in the moiety and a reactive ortho, ortho bonded oligomer having the formula: ##STR1## wherein x is from 2 to 7; wherein R is selected from hydrogen a lower alkyl group or lower alkoxy group having 1-4 carbon atoms and a halogen group; and Y.sub.1 is either a hydroxyl group; an alkoxy group or a halogen group; and Y.sub.2 is hydrogen, alkyl, alkoxy, halogen, hydroxyl, --CH.sub.2 OH, --CH.sub.2 -- halogen, or --CH.sub.2 -alkoxy group.
Type:
Grant
Filed:
June 4, 1991
Date of Patent:
February 23, 1993
Assignee:
OCG Microelectronic Materials, Inc.
Inventors:
Alfred T. Jeffries, III, Kenji Honda, Andrew J. Blakeney, Sobhy Tadros
Abstract: A positive resist composition comprising a radiation-sensitive component and an alkali-soluble resin and a phenol compound of the formula: ##STR1## wherein R is a hydrogen atom, a lower alkyl group or a phenyl group, R' is an alkyl group or an alkoxy group, and n is a number of 0 to 3, which has well balanced good properties such as sensitivity, resolution, heat resistance and adhesiveness.
Abstract: A positive photosensitive composition for forming lenses, which comprises a polymer, a photosensitive agent, a thermosetting agent and a solvent, wherein said polymer is an alkali-soluble resin, said photosensitive agent is a 1,2-naphthoquinone diazide sulfonate, and said thermosetting agent is a thermosetting agent capable of imparting heat resistance and solvent resistance at the time of forming lenses by heat treatment.
Abstract: Photosensitizers containing saturated and unsaturated polycyclic compounds containing the cyclopentane-2-diazo-1,3-dione structural unit.These compounds have their maximum u.v. absorption at around 248 nm, decompose into polar products upon irradiation, and can be used as photosensitizers in positive deep u.v. or excimer laser (248 nm) lithography. They are most preferably useful with deep u.v. transparent resins for forming photoresists.
Type:
Grant
Filed:
April 30, 1991
Date of Patent:
January 26, 1993
Assignee:
Hoechst Celanese Corporation
Inventors:
Chengjiu Wu, Anne Mooring, James T. Yardley
Abstract: A positive photosensitive planographic printing plate is disclosed which has a photosensitive layer comprising in combination a specific o-naphthoquinonediazidosulfonic ester and a resin having a specific structural unit(s). Said photosensitive layer may also contain a novolak resin and/or an organic acid.
Abstract: Novolak resins are provided which are the condensation product of (a) a phenol, phenol derivative, or mixtures thereof, and (b) a mixture of formaldehyde or a formaldehyde precursor and (1) a monohydroxy aromatic aldehyde and wherein at least a portion of the hydroxyl groups thereof are esterified or (2) a mixture of at least one monohydroxy aromatic aldehyde and at least one non-hydroxylic aromatic aldehyde; the novolak resins having a hydroxyl number of from about 120 to about 180 grams of resin per equivalent of hydroxyl. The novolak resins are especially useful in positive photoresist formulations and have enhanced photospeed and film loss characteristics as well as improved thermal stability.
Type:
Grant
Filed:
February 5, 1990
Date of Patent:
January 26, 1993
Assignee:
Morton International, Inc.
Inventors:
Richard M. Lazarus, Randall Kautz, Sunit S. Dixit
Abstract: A radiation sensitive oligomeric compound is described as the photoactive component with a base soluble phenolic matrix resin to provide improved photo-resist composition having high light-sensitivity, high resolution, excellent developer resistance and excellent resistance to thermal flow.
Type:
Grant
Filed:
June 19, 1992
Date of Patent:
January 12, 1993
Assignee:
Shipley Company Inc.
Inventors:
Anthony Zampini, David C. Madoux, Peter Trefonas, III, Charles R. Szmanda
Abstract: A methylol-substituted trihydroxybenzophenone of the formula (I): ##STR1## This methylol-substituted trihydroxybenzophenone may be reacted with selected phenolic monomers during or after the formation of a phenolic novolak resin thereby said resin having at least one unit of formula (II): ##STR2## wherein R and R.sub.1 are individually selected from hydrogen, a lower alkyl group having 1 to 4 carbon atoms or a lower alkoxy group having 1 to 4 carbon atoms.
Abstract: A positive type photoresist developer which comprises an aqueous solution of quaternary ammonium hydroxide represented by the general formula; ##STR1## (wherein all the symbols are as defined in the appended claims) and hydrazine or hydrazine and a nonionic surfactant is disclosed.The developer can form a fine pattern having a high degree of resolution and can provide an excellent profile with few irregularities in pattern dimensions.
Abstract: A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.
Abstract: A water soluble contrast enhancement compound and composition, and a method of use thereof, are disclosed for improving sidewall profiles in photoresist patterning and developing. The compound consists of a 1-oxy-2-diazonaphthalene sulfonamide salt.
Type:
Grant
Filed:
September 13, 1990
Date of Patent:
December 22, 1992
Assignee:
Texas Instruments Incorporated
Inventors:
John B. Covington, Vic B. Marriott, Larry G. Venable, Peter Kim
Abstract: A positive-working photoresist composition is disclosed, which comprises (1) a light-sensitive material obtained by reacting a polyhydroxy compound containing at least one group represented by the following general formula (I) per molecule with at least one of 1,2-naphthoquinonediazido-5-sulfonyl chloride and 1,2-naphthoquinonediazido-4-sulfonyl chloride, and (2) an alkali-soluble novolak resin: ##STR1## wherein R.sub.1 and R.sub.2 each represents a hydrogen atom or a C.sub.1 -C.sub.4 straight or branched alkyl or alkoxy group, provided that R.sub.1 and R.sub.2 do not represent hydrogen atoms at the same time; and X represents a divalent organic group.
Abstract: Photosensitive compositions comprising a polymer and a photoactive constituent, which are able to be developed with aqueous, alkaline agents exhibit good bleaching properties in the DUV range, whereby the photoactive constituent has good solubility-inhibiting properties and does not evaporate during the drying process, when the photoactive constituent comprises diazo tetronic acid or a diazo tetronic acid derivative of the following structure: ##STR1## where the residues R are the same or different and signify H, alkyl, cycloalkyl, aryl or a silicon-containing residue.
Type:
Grant
Filed:
July 20, 1990
Date of Patent:
December 15, 1992
Assignee:
Siemens Aktiengesellschaft
Inventors:
Michael Sebald, Juergen Beck, Rainer Leuschner, Recai Sezi, Hans J. Bestmann
Abstract: Resist containing novolak prepared by condensating halogenated phenol represented by the following formula (III) and one or more phenol derivatives selected from the group consisting of cresol, xylenol, tet-butylphenol and propenylphenol, with a carbonyl compound ##STR1## wherein R.sub.3 is an halogen atom selected from the group consisting of F, Cl, and Br. If the resist is used as a positive-type one, it further contains a photo-sensitive agent, and R.sub.3 in the formula (III) is either F or Br. If the resist is used as a negative-type one, it further contains a photosensitive agent and/or a sensitizer, and R.sub.3 in the formula (III) is either Cl or Br.
Type:
Grant
Filed:
March 29, 1990
Date of Patent:
December 8, 1992
Assignee:
Kabushiki Kaisha Toshiba
Inventors:
Toru Ushirogouchi, Tsukasa Tada, Akitoshi Kumagae
Abstract: Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.
Abstract: Disclosed herein is a positive resist composition comprising an alkali-soluble phenolic resin and the quinonediazide sulfonate of at least one phenolic compound selected from vinylphenol compounds and isopropenylphenol compounds as a photosensitive agent. It is suitable for use in minute processing.
Abstract: The invention provides an aqueous electrodeposition coating composition for a positive working resist and an image-forming method using the same. The coating composition is very stable under storage conditions and is capable of resulting in a positive working resist which is specifically useful in the preparation of a printed circuit board with mini-via-holes.
Type:
Grant
Filed:
July 9, 1991
Date of Patent:
November 24, 1992
Assignee:
Nippon Paint Co., Ltd.
Inventors:
Mamoru Seio, Takeshi Ikeda, Kanji Nishijima, Katsukiyo Ishikawa
Abstract: A compound of the general formula I ##STR1## in which D denotes a 1,2-naphthoquinone-2-diazide-4-sulfonyl or - 5-sulfonyl radical,R.sup.1 denotes an alkylene group andR.sup.2 denotes a hydrogen atom, an alkyl group or a group R.sup.1 --OH,or of the general formula II ##STR2## in which X denotes an alkylene group, an arylene group or a group of the formulaNH--Y--NH,wherein Y is an alkylene group or an arylene group,R.sup.3 denotes an alkylene group, which may be interrupted by ether oxygen atoms,n is a number from 1 to 40 andm is a number from 0 to 50,the ratio m:(m+n) being from 0:100 to 95:100 and R.sup.1 and D having the above-indicated meaning, are disclosed. The compounds may be used in positive-working photosenitive materials for the production of printing plates and photoresists. Compounds according to formula II do not require an addition of polymeric binders.
Type:
Grant
Filed:
June 29, 1989
Date of Patent:
November 10, 1992
Assignee:
Hoechst Aktiengesellschaft
Inventors:
Wolfgang Zahn, Gerhard Buhr, Hartmut Steppan
Abstract: The invention relates to new mixed ester photosensitive compounds and photosensitizer compositions comprised thereof. The photosensitive compounds and photosensitizer compositions are prepared by condensing phenolic compounds with a 1,2-naphthoquinonediazide-4-sulfonic acid halide and an organic acid halide in specific ratios. Photoresist compositions comprising the photosensitive compounds and photosensitizer compositions are also disclosed. The photosensitizer compositions exhibit excellent solution stability and resistance to precipitation when formulated in alkali-soluble resin photoresist compositions. The photoresist compositions have improved shelf life.
Type:
Grant
Filed:
May 9, 1991
Date of Patent:
November 10, 1992
Assignee:
Hoechst Celanese Corporation
Inventors:
Robert E. Potvin, Jonas O. St. Alban, Chester J. Sobodacha
Abstract: An .alpha.-diazoacetoacetic acid ester derived from cholic acid, deoxycholic acid, lithocholic acid or a derivative thereof is effective as a sensitizer in a photosensitive resin composition containing an alkali-soluble resin to form a resist for lithography using KrF excimer laser.
Abstract: Present invention provides a photosensitive and high energy beam sensitive resin composition which may be used as a resist material for forming both of the positive and negative patterns. The resin composition comprises: a substituted polysiloxane having the main polysiloxane chain and a substituent hydrophilic group or groups; and a solvent for the substituted polysiloxane. The substituted polysiloxane used in preferred embodiments of the invention are produced by acylating polysiloxanes including polydiphenylsiloxane and polyphenylsilsesquioxane to introduce acyl groups, followed by oxidation of the thus introduced acyl groups to convert them into carboxyl groups or by reducing the thus introduced acyl groups to convert them into alpha-hydroxyalkyl groups. The acyl, carboxyl or alpha-hydroxyalkyl groups are further substituted to obtain substituted polysiloxanes which are soluble in an aqueous alkali.
Type:
Grant
Filed:
August 29, 1990
Date of Patent:
October 27, 1992
Assignee:
Nippon Telegraph and Telephone Corporation
Abstract: Polymers comprising perfluoroalkyl groups, reproduction layers containing these polymers and use thereof for waterless offset printing. The novel perfluoroalkyl group-containing polymers comprise polymers or polycondensates and have, in each case as substituents on different carbon atoms of benzene rings, phenolic OH groups and perfluoroalkyl groups which are optionally attached through intermediate members. In particular, at least 10% of the polymer units carry perfluoroalkyl groups. These polymers are either formed by condensation of substituted phenols (e.g., 4-hydroxybenzoic acid-perfluoroalkyl ester) with an aldehyde, a ketone, or a reactive bismethylene compound or by reacting polymers containing phenolic OH groups (e.g., hydroxypolystyrene) or polycondensates containing reactive OH groups (e.g., phenol-formaldehyde resins) with a perfluoroalkyl group-containing compound (e.g., 2,2-dihydroperfluorodecanoic acid chloride).
Abstract: A positive type photoresist composition comprising at least one light-sensitive material, as defined herein, and an alkali-soluble novolak resin, has a high resolving power, particularly when used in semiconductor devices, accurately reproduces mask dimensions over a wide photomask line width range, from a resist pattern in a cross-sectional form having a high aspect ratio in a pattern having a line width of no greater than 1 .mu.m, has a wide developing latitude and excellent heat resistance.
Abstract: Process for producing dimer-free phenolic polymers, particularly novolak polymers produced from cresol mixtures, and photoresist compositions containing such dimer-free novolak polymers. The process comprises reacting phenolic polymers containing phenolic dimers with a capping agent, such as a silylating agent, to cap all of the phenolic hydroxy groups. This reduces the distillation temperature of the capped dimers and renders the capped polymer stable at such distillation temperature. The capped dimers are distilled off, and finally the phenolic polymer is uncapped. Dimer-free novolaks produce scum-free developed photoresist images.
Abstract: A photoactive compound having formula (I): ##STR1## wherein R is selected from the group consisting of hydrogen or a lower alkyl group having 1-4 carbon atoms and each D is individually selected from the group consisting of a hydrogen or photoactive o-quinonediazide sulfonyl group; subject to the proviso that at least two of the four D's in formula (I) are photoactive o-naphthoquinonediazide sulfonyl moieties.
Abstract: A developer composition for presensitized plates for use in making lithographic printing plates comprises water, an alkali silicate and at least one compound having at least one aryl group, at least one oxyalkylene group and at least one sulfate ester group or sulfonic acid group. The composition is excellent in developing stability and processability. It is less foamable and seldom generates deposits even when it is deteriorated. Moreover, the composition makes it possible to develop both positive- and negative-working PS plates.
Abstract: A positive photoresist composition containing (i) a quinone diazide polymer formed by reacting a cresol-formaldehyde novolac resin and an o-quinonediazide compound, and (ii) a sulfonamide development enhancement agent.
Abstract: The invention provides a method for producing a positive working photosensitive element with increased photospeed which comprises coating a formulation containing at least one novolak or polyvinyl phenol resin, at least one o-quinone diazide and a propylene glycol alkyl ether acetate on a substrate, drying, exposing to imaging energy and developing.
Abstract: A light-sensitive mixture is disclosed which contains a 1,2-naphthoquinone-2-diazide-sulfonic acid ester and a binder. A reproduction material produced with this mixture is also disclosed. The naphthoquinone-diazide-sulfonic acid ester is a compound of the general formula I ##STR1## in which D is a 1,2-naphthoquinone-2-diazide-4-sulfonyl or 1,2-naphthoquinone-2-diazide-5-sulfonyl radical,R.sub.1 is hydrogen or an -OD group, andR.sub.2 is alkyl or substituted or unsubstituted aryl, preferably alkyl having 1 to 10 carbon atoms or substituted or unsubstituted phenyl.The light-sensitive mixture is highly photosensitive, has good overdevelopment resistance and is resistant to fountain solutions and petroleum hydrocarbons.
Abstract: A light-sensitive composition comprising:(a) a polysiloxane compound having at least 1 mol % of a structural unit derived from a product of a thermal cycloaddition reaction between a compound of formula (I), (II), (III) or (IV) and a compound of formula (V), (VI), (VII) or (VIII), and(b) an orthoquinonediazide compound.
Abstract: A photosensitive composition is described, wherein it comprises a high-molecular compound having sulfonamide group to be insoluble in water, but soluble in an aqueous alkaline solution and a positive working photosensitive compound. The photosensitive composition is excellent in coatability and in developability when the composition is used for photosensitive lithographic printing plates.
Abstract: A positive-type photosensitive electrodeposition coating composition comprising(A) a photosensitive compound having a molecular weight of less than 6,000 and containing at least one modified quinonediazidesulfone units represented by the following formula (I) ##STR1## wherein R.sub.1 represents ##STR2## R.sub.2 represents a hydrogen atom, an alkyl group, a cycloalkyl group or an alkyl ether group, andR.sub.3 represents an alkylene group, a cycloalkylene group or an alkylene ether group,in the molecule and(B) an acrylic resin having a salt-forming group.
Abstract: Process for producing dimer-free phenolic polymers, particularly novolak polymers produced from cresol mixtures, and photoresist compositions containing such dimer-free novolak polymers. The process comprises reacting phenolic polymers containing phenolic dimers with a capping agent, such as a silylating agent, to cap all of the phenolic hydroxy groups. This reduces the distillation temperature of the capped dimers and renders the capped polymer stable at such distillation temperature. The capped dimers are distilled off, and finally the phenolic polymer is uncapped. Dimer-free novolaks produce scum-free developed photoresist images.
Abstract: A positive resist composition comprising an alkali-soluble resin, a quinone diazide compound and a specific hydroxyl group-containing compound can improve sensitivity without deterioration of heat resistance and film thickness retention.
Abstract: A positive-working photoresist composition is disclosed comprising an alkali-soluble resin and a 1,2-naphthoquinonediazido group-containing compound, and further contains at least one light absorber selected from the group consisting of the azo compounds represented by the following formulae (I), (II), (III), (IV), (V) and (VI) in a proportion of from about 0.1 to about 10% by weight based on the total solid content of the photoresist composition, and is useful for forming a fine pattern of excellent quality even on a substrate with unevenness or high reflectivity: ##STR1## wherein R.sub.1 represents a hydrogen atom or a lower alkyl group; and X represents a sulfur atom or an oxygen atom; ##STR2## wherein R.sub.2 represents a hydroxyl group or a di(lower alkyl)amino group; R.sub.3 and R.sub.4 each represents a hydrogen atom or a carboxyl group, provided that at least one of R.sub.3 and R.sub.4 represents a carboxyl group; and R.sub.
Abstract: Novolak resins are provided which are the condensation product of (a) a phenol, phenol derivative, or mixtures thereof, and (b) a mixture of formaldehyde or a formaldehyde precursor and an aromatic aldehyde. When the aromatic aldehyde is a monohydroxy aromatic aldehyde, the novolak resin is especially useful in positive photoresist formulations.
Type:
Grant
Filed:
November 16, 1990
Date of Patent:
July 14, 1992
Assignee:
Morton International, Inc.
Inventors:
Richard M. Lazarus, Randall Kautz, Sunit S. Dixit
Abstract: This invention is directed to novel photoresist processes and compositions having high resolution novalac resins, high resolution photoactive components with several diazoquinone groups per molecule, and solvents having a high solvency power, better safety, improved photospeed, higher contrast and equivalent cast film thickness from lower percent solids formulations.
Type:
Grant
Filed:
January 23, 1991
Date of Patent:
July 7, 1992
Assignee:
Shipley Company Inc.
Inventors:
Michael K. Templeton, Anthony Zampini, Peter Trefonas, III, James C. Woodbrey, David C. Madoux, Brian K. Daniels
Abstract: A photoresist that utilizes a copolymer of a phenol and a cyclic alcohol having increased optical transmission properties relative to photoresists using fully aromatic phenolic resins. Preferred binders are hydrogenated novolak resins and hydrogenated polyvinyl phenol resins.
Type:
Grant
Filed:
May 22, 1989
Date of Patent:
July 7, 1992
Assignee:
Shiply Company Inc.
Inventors:
James Thackeray, George W. Orsula, Roger Sinta
Abstract: A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I) or (II): ##STR1## wherein a, c and d are the same or different and a number of 0 to 3, provided that when a is 0 or 3, b is a number of 0 to 3 or when a is 1 or 2, b is 0, 1 or 2, and a+b and c+d are not less than 2; R and R' are the same or different and an alkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.
Type:
Grant
Filed:
July 18, 1989
Date of Patent:
June 23, 1992
Assignee:
Sumitomo Chemical Co., Ltd.
Inventors:
Yasunori Uetani, Makoto Hanabata, Hirotoshi Nakanishi, Koji Kuwana, Fumio Oi
Abstract: A photosensitive composition having increased contrast and selectivity, useful in forming high resolution patterns. The composition comprises a phenolic resin, a diazoquinone compound and an aromatic fused polycyclic sulfonic or carboxylic acid, in the form of the free acid and/or an ammonium salt and/or an acid halide, the cation component of the ammonium salt having the formula ##STR1## wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4, each represent hydrogen, C.sub.1 -C.sub.4 -alkyl or C.sub.1 -C.sub.4 -hydroxyalkyl.In forming a negative pattern, the composition is coated on a substrate and exposed imagewise to ultraviolet radiation, thereafter treated with a silicon compound, whereby the silicon compound is selectively absorbed into the irradiated portions and the nonirradiated portions are then removed by dry etching.
Type:
Grant
Filed:
March 8, 1991
Date of Patent:
May 26, 1992
Assignee:
U C B S.A.
Inventors:
Bruno Roland, Jan Vandendriessche, Catherine Jakus