Abstract: Some embodiments of the invention provide methods that can create large area complex patterns for nanoimprint molds without or with very litter of the use of the charged beam or photon beam direct-writing of nanostructures. Some embodiments of the invention use (i) Fourier nanoimprint patterning (FNP), (ii) edge-guided nanopatterning (EGN), and (iii) nanostructure self-perfection, and their combinations.

Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer comprises a fluorine-containing polymer, a crosslinker and a photoactive compound.

Abstract: A method for producing a printing plate, containing: an exposure step of forming a relief by the exposure of a photosensitive resin composition; and a developing step of performing development by attaching or adsorbing the photosensitive resin composition of an unexposed portion in the exposure step to a development medium, wherein a storage elastic modulus of the photosensitive resin composition of the unexposed portion at a development temperature of the developing step is 100 Pa or more and 4000 Pa or less, and the development medium is a wiper having an elastic recovery rate of 30% or more and 99% or less.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first cap layer on the MTJ, forming a first inter-metal dielectric (IMD) layer on the first cap layer, forming a second cap layer on the first cap layer and the first IMD layer, forming a second IMD layer on the first cap layer, the first IMD layer, and the second cap layer, and then planarizing the first cap layer, the first IMD layer, the second cap layer, and the second IMD layer.

Abstract: In one embodiment, a multi charged particle beam writing method includes forming a multi charged particle beam with which a substrate serving as a writing target is irradiated, deflecting the multi charged particle beam to a position with a predetermined deflection offset added so that deflection voltages respectively applied to a plurality of electrodes of an electrostatic positioning deflector does not include a state where all the deflection voltages are zero, and irradiating the substrate with the multi charged particle beam. A positive common voltage is added to the deflection voltages which are applied to the respective electrodes of the electrostatic positioning deflector.

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

Abstract: A method of processing a substrate that includes: depositing a photoresist layer over the substrate; performing a cyclic direct-write lithographic process using a direct-write lithography tool, the cyclic direct-write lithographic process including a plurality of cycles, each of the plurality of cycles including: exposing the photoresist layer to a patterned actinic radiation without using a photomask, defining one of a plurality of coupon regions, where the plurality of coupon regions are configured to generate a plurality of test samples on the substrate for evaluating process conditions of a fabrication process; exposing the one of the plurality of coupon regions; and performing the fabrication process on the one of the plurality of coupon regions.

Abstract: An electronic component includes a capacitor element, an inductor element connected electrically to the capacitor element, and an interlayer-insulation layer between the capacitor and inductor elements. The interlayer-insulation layer has a first principal surface, a second principal surface, and a via hole through the interlayer-insulation layer between the first and second principal surfaces. The capacitor element is at a side of the second principal surface of the interlayer-insulation layer and includes a first electrode layer, a second electrode layer, and a dielectric layer interposed between the first electrode layer and the second electrode layer. The inductor element is at a side of the first principal surface of the interlayer-insulation layer and includes an inductor wire that has an inductor portion disposed on the first principal surface and also has a via portion through the via hole to connect the inductor portion to the second electrode layer.

Abstract: The invention relates to a random copolymer of structure (A) comprising, a carboxylic acid bearing repeat of structure (I), a 4-vinylbenzocyclobutene derived repeat unit of structure of structure (II), a styrenic repeat unit of structure (III), an alkyl acrylate or alkyl 2-methylenealkanoate derived repeat unit of structure (IV), a hydroxy functionalized alkyl acrylate or alkyl 2-methylenealkanoate derived repeat unit of structure (V), and two end groups as shown in structure (A) one of which is H and the other is a methyl moiety substituted with Rr, Rr1 and Rr2, wherein Rr1, is a C-1 to C-8 alkyl, Rr2 is selected from a C-1 to C-8 alkyl, a C-1 to C-8 alkylene hydroxy moiety (-alkylene-OH), a C-1-C-8 alkylenecarboxylic acid moiety (-alkylene-CO2H), or a benzylic alcohol comprising moiety of structure (B), Rr is a cyano moiety (—CN) or a carbonylalkyl moiety (—C(?O)—Ri), wherein Ri is a C-1 to C-8 alkyl or an aryl moiety.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (P) of which a solubility in a developer changes by an action of an acid; a compound (A) that has a group (a) having a polarity which changes through decomposition by an action of an acid, and generates an acid (ac1) upon irradiation with actinic rays or radiation; a compound (B) that generates an acid (ac2) having a higher pKa than the acid (ac1) generated from the compound (A), upon irradiation with actinic rays or radiation; and a basic compound (C).

Abstract: A method for patterning a substrate involves depositing a layer of resist material on a surface of the substrate, lithographically patterning (electron beam exposing and then developing) the layer of the resist material to form a patterned resist layer having a pattern multi-faceted microscale structures with a depth profile that varies over an area of the layer of resist material, and using the patterned resist layer in an etching step to transfer the pattern of multi-faceted microscale structures from the patterned resist layer to the substrate.

Abstract: Photoresist compositions may include a photosensitive polymer including a first repeating unit of Chemical Formula 1; a photoacid generator (PAG); and a solvent.

Abstract: In one aspect, amphiphilic block copolymers are described herein comprising a first block and a second block, the second block including monomer having a side chain comprising a heteroaryl moiety, wherein the second block is more hydrophobic than the first block. In some embodiments, the heteroaryl moiety is a five-membered ring or six membered ring. Amphiphilic block copolymers described herein, in some embodiments, can be used to form micellar compositions for solubilizing and delivering water insoluble pharmaceutical and/or therapeutic agents.

Abstract: A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes generating a first virtual layout by placing and routing standard cells using a virtual netlist, searching first duplicate pattern regions in the first virtual layout and choosing one of them as a first representative pattern region, performing an OPC operation on the first representative pattern region to obtain a first OPC result, generating an actual layout by placing and routing standard cells using an actual netlist, performing an OPC operation on the actual layout, and forming a photoresist pattern on a substrate using a photomask manufactured based on the actual layout, to which the OPC operation is applied.

Abstract: A method for manufacturing a low-angle blazed grating on a semiconductor or silicon substrate, includes spin-coating the substrate with resist layer or hydrogen or polysilsesquioxane, being 100-1000 nm or few hundred nanometers thick, applying grayscale irradiation lithography exposure to the resist layer, generating a dose modulated pattern therein, varying in response to absorbed energy density from irradiation lithography exposure. The coated, irradiated substrate is developed in solution, such as TMAH or NaOH, enabling a blazed profile having structures of thickness-dependent diffusion barriers or SiO2, with 0-1000 nm height to emerge. Thermal oxidation in oxygen atmosphere at elevated temperature with the developed substrate, converts the upper silicon substrate layer into SiO2 to a depth depending on the thickness of the pattern in the resist layer above. Hydrofluoric acid fluid removes the SiO2, creating low-angle low-roughness blazed grating structure on silicon substrate.

Abstract: A positive resist composition comprises a base polymer comprising repeat units (a) derived from a triple bond-containing maleimide compound and repeat units (b) adapted to increase solubility in an alkaline developer under the action of acid. A pattern of good profile with a high resolution, reduced edge roughness, and reduced size variations is formed therefrom.

Abstract: An apparatus for exposure of a relief precursor having a first side and an opposite second side includes a light source to expose the relief precursor during relative movement between the light source and the relief plate precursor; a moving means to cause a first relative movement between the light source and the relief precursor to expose the first side of the relief precursor, to cause a second relative movement between the light source and the relief precursor to expose the second side of the relief precursor, and to move the light source between a first position and a second position. The first and second positions are on opposite sides of a plane of the relief precursor. At least one of the first and the second relative movement is a reciprocating movement.

Abstract: An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A method, apparatus, and system for processing a material stack. A hydrogen silsesquioxane layer is deposited on the material stack. A diffusion barrier layer is deposited on the hydrogen silsesquioxane layer to form a bilayer. The diffusion barrier layer comprises a material having a thickness that increases an amount of time before the hydrogen silsesquioxane layer ages to change a dose in an electron beam needed to expose the hydrogen silsesquioxane layer for a selected feature geometry with a desired width. The electron beam is directed through a surface of the bilayer to form an exposed portion of the bilayer. The electron beam applies the dose that is selected based on a pattern density of features for the material stack to have a desired level of exposure of the hydrogen silsesquioxane layer for the selected feature geometry. The hydrogen silsesquioxane layer is developed. The exposed portion remains on material stack.

Abstract: A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed. Specific details of Chemical Formula 1 are as defined in the specification.

Abstract: A system and method for providing and programming a programmable inductor is provided. The structure of the programmable inductor includes multiple turns, with programmable interconnects incorporated at various points around the turns to provide a desired isolation of the turns during programming. In an embodiment the programming may be controlled using the size of the vias, the number of vias, or the shapes of the interconnects.

Abstract: A method for producing an ion-exchange resin having a water content of 5% by weight or less, a method for producing a lithography coating film forming-composition using the ion-exchange resin, and a method for washing the ion-exchange resin. The methods include the step of passing an organic solvent having a water content of 150 ppm or less through an ion-exchange resin precursor having a water content of 40% by weight or more, where a dehydration efficiency defined by the following equation is 5 or more: Dehydration efficiency=Dehydration rate (%)/[Weight of the organic solvent used per unit weight of the ion-exchange resin precursor (kg/kg)×Washing time (h)].

Abstract: In a first aspect, a polymer composition includes a first polymer derived from a soluble polymer composition having an imide group and a Tg reducing compound having an amine group. The first polymer has a glass transition temperature that is lower than a second polymer derived from the same soluble polymer composition, but without a Tg reducing compound having an amine group. In a second aspect, a coating solution includes a soluble polymer having an imide group and a Tg reducing compound having an amine moiety that can be an amine or a first masked amine that can be converted to an amine, wherein the first masked amine can be chemically converted, thermally converted, photo-converted or dissociated.

Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

Abstract: An object of the present invention is to provide a resist pattern forming method that has excellent pattern forming properties and generates few residues and a semiconductor chip manufacturing method. The resist pattern forming method according to an embodiment of the present invention has a step A of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing a photoacid generator and a resin whose polarity is increased by the action of an acid, a step B of exposing the film, step C of developing the exposed film by using an alkali developer, a step D of washing the developed film by using water, and a step E of washing the film washed in the step D by using a chemical liquid containing an alcohol-based solvent, in which the alkali developer contains a quaternary ammonium salt.

Abstract: A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.

Abstract: An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.

Abstract: A method for producing an optical element includes: forming a resist layer on a main surface of a substrate; forming a pattern region in the resist layer; forming a groove; forming a dielectric layer covering the pattern region; and forming an optical functional portion. The pattern region is formed in the resist layer. The groove is formed in a portion corresponding to a periphery of the pattern region as viewed in a direction orthogonal to the main surface. A dielectric is deposited to form the dielectric layer. After the dielectric layer covering the pattern region is formed, the resist layer is removed to form the optical functional portion at a position where the pattern region is disposed on the main surface. The optical functional portion is made of the dielectric.

Abstract: A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.

Abstract: Integrated circuit structures having differentiated interconnect lines in a same dielectric layer, and methods of fabricating integrated circuit structures having differentiated interconnect lines in a same dielectric layer, are described. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A plurality of conductive interconnect lines is in the ILD layer. The plurality of conductive interconnect lines includes a first interconnect line having a first height, and a second interconnect line immediately laterally adjacent to but spaced apart from the first interconnect line, the second interconnect line having a second height less than the first height.

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Abstract: Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a Si—SiC member provided on or above the bonding layer.

Abstract: A multi-beam apparatus for multi-beam inspection with an improved source conversion unit providing more beamlets with high electric safety, mechanical availability and mechanical stabilization has been disclosed. The source-conversion unit comprises an image-forming element array having a plurality of image-forming elements, an aberration compensator array having a plurality of micro-compensators, and a pre-bending element array with a plurality of pre-bending micro-deflectors. In each of the arrays, adjacent elements are placed in different layers, and one element may comprise two or more sub-elements placed in different layers. The sub-elements of a micro-compensator may have different functions such as micro-lens and micro-stigmators.

Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.

Abstract: In some implementations, a vertical-cavity surface-emitting laser (VCSEL) array may comprise a plurality of channels, a plurality of traces, and a plurality of emitters. A channel, of the plurality of channels, may include a set of emitters, of the plurality of emitters, arranged in a row of emitters. The channel may include a trace, of the plurality of traces, that has a trace width that is tapered along a length of the trace. Numerous other aspects are provided.

Abstract: Provided is a copolymer that can be favorably used as a main chain scission-type positive resist that has excellent heat resistance and that can form a resist pattern having excellent resolution and clarity. The copolymer includes a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II), and has a molecular weight distribution of 1.7 or less. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R1 is an alkyl group, R2 is an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R2 is present, each R2 may be the same or different.

Abstract: In embodiments of a digital lithography system, physical design data prepared at a data prep server in a hierarchical data structure. A leaf node comprises a repeater nod, comprising a bitmap image and a plurality of locations at which the bitmap appears in a physical design. At an EYE server, a repeater node bitmap is adjusted based upon, for example, spatial light modulator rotational adjustment and substrate distortion. The adjusted repeater node and the plurality of locations in which the adjusted repeater appears is compared to the repeater of the data prep server and its plurality of locations. In further embodiments, a rasterizer generates a checksum of bitmap to be printed to a substrate, from the EYE server bitmap. The checksum is compared to a checksum of the EYE server bitmap.

Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising the steps of: measuring a tilt of the sample, correcting an orientation of the sample based on the tilt, and scanning the sample.

Abstract: An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.

Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.

Abstract: The present invention relates to a composition containing a compound (A) represented by the following general formula (I) and a compound having two or more polymerizable functional groups (B) in a molecule (except for compound (A)), wherein a mass ratio ((A)/(B)) of the compound (A) to the compound having two or more polymerizable functional groups (B) in a multi-molecule is 30/70 to 50/50: wherein, R1 and R2 each independently represent any one selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an aryl group, and an aralkyl group; R3 represents any one selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an aryl group, and an aralkyl group; R4 represents any one selected from the group consisting of a (meth)acryloyl group, a styryl group, and an alkenyl group having 2 to 6 carbon atoms; and n represents any integer of 1 to 5.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A system and method for providing and programming a programmable inductor is provided. The structure of the programmable inductor includes multiple turns, with programmable interconnects incorporated at various points around the turns to provide a desired isolation of the turns during programming. In an embodiment the programming may be controlled using the size of the vias, the number of vias, or the shapes of the interconnects.

Abstract: The present invention discloses a triphenylsulfonium salt compound as shown in the general formula (I), wherein R1 represents an electron-withdrawing group and R2 represents an amplification group. Said compound shows significantly enhanced solubility and photosensitivity compared with unsubstituted triphenylsulfonium salts, and has significantly advantageous performance compared with prior art improved substitutes.