Electron Beam Imaging Patents (Class 430/296)
  • Patent number: 10811492
    Abstract: A method of fabricating an integrated circuit includes applying photoresist to a MESA dielectric layer of a semiconductor structure, to generate a photoresist layer. The method also includes exposing the photoresist layer with a grayscale mask, to generate an exposed photoresist layer. The photoresist exposed layer includes a thick photoresist pattern in a first region, a thin photoresist pattern in a second region where a height of the thin photoresist pattern is less than half a height of the thick photoresist pattern, and a gap region between the thick photoresist pattern and the thin photoresist pattern.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: October 20, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Jeffrey Alan West, Byron Lovell Williams, John Britton Robbins
  • Patent number: 10761428
    Abstract: A method for fabricating calcite channels in a nanofluidic device is described. A photoresist layer is coated onto a top surface of a silicon nitride (SiN) substrate. After coating the photoresist layer, the photoresist layer is scanned with an electron beam in a predefined pattern. The scanned photoresist is developed to expose portions of the top surface of the SiN substrate in the predefined pattern. Calcite is deposited in the predefined pattern using atomic layer deposition (ALD) using a calcite precursor gas. Using a solvent, a remaining portion of the photoresist layer is removed to expose the deposited calcite in the predefined pattern and on the top surface of the SiN substrate, where a width of the deposited calcite is in range from 50 to 100 nanometers (nm).
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: September 1, 2020
    Assignee: Saudi Arabian Oil Company
    Inventors: Dong Kyu Cha, Mohammed Badri AlOtaibi, Ali Abdallah Al-Yousef
  • Patent number: 10748744
    Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes inputting an original set of exposure information for the area and inputting a target post-proximity effect correction (PEC) maximum dose. A local pattern density is calculated for the area of the pattern based on the original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PEC maximum dose.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: August 18, 2020
    Assignee: D2S, Inc.
    Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
  • Patent number: 10692696
    Abstract: A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: June 23, 2020
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Teunis Van De Peut, Marco Jan-Jaco Wieland
  • Patent number: 10663708
    Abstract: Coordinates of a first region extraction window, a first sample stage coordinate, a second sample stage coordinate, and a second region extraction window, including images of one sample stage and an observation target tissues of a sample when the one sample stage is respectively positioned on two microscopes are respectively obtained. Based on difference between the first sample stage coordinate and the second sample stage coordinate, the second sample stage coordinate is corrected. Based on the obtained corrected second sample stage coordinate, the second positioning unit is moved from the second non-observation position to the second observation position where the second region extraction window is located at a position corresponding to the coordinate position of the first region extraction window.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: May 26, 2020
    Assignees: NAKAMURA SANGYO GAKUEN, INTERNATIONAL SCIENCE TECHNOLOGY CO., LTD., TCK INC.
    Inventors: Shinichiro Isobe, Takaaki Kanemaru, Shin-ichi Takasu, Koji Kosaka, Takashi Oe
  • Patent number: 10659229
    Abstract: Methods, systems and devices for using charged particle beams (CPBs) to write different die-specific, non-volatile, electronically readable data to different dies on a substrate. CPBs can fully write die-specific data within the chip interconnect structure during the device fabrication process, at high resolution and within a small area, allowing one or multiple usefully-sized values to be securely written to service device functions. CPBs can write die-specific data in areas readable or unreadable through a (or any) communications bus. Die-specific data can be used for, e.g.: encryption keys; communications addresses; manufacturing information (including die identification numbers); random number generator improvements; or single, nested, or compartmentalized security codes. Die-specific data and locations for writing die-specific data can be kept in encrypted form when not being written to the substrate to conditionally or permanently prevent any knowledge of said data and locations.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: May 19, 2020
    Inventors: Michael C. Smayling, David K. Lam, Theodore A. Prescop, Kevin M. Monahan
  • Patent number: 10613441
    Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: April 7, 2020
    Assignee: The University of Manchester
    Inventors: Scott Lewis, Richard Winpenny, Stephen Yeates
  • Patent number: 10593626
    Abstract: A method including forming a dielectric layer on a contact point of an integrated circuit structure; forming a hardmask including a dielectric material on a surface of the dielectric layer; and forming at least one via in the dielectric layer to the contact point using the hardmask as a pattern. An apparatus including a circuit substrate including at least one active layer including a contact point; a dielectric layer on the at least one active layer; a hardmask including a dielectric material having a least one opening therein for an interconnect material; and an interconnect material in the at least one opening of the hardmask and through the dielectric layer to the contact point.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: March 17, 2020
    Assignee: Intel Corporation
    Inventors: Ruth A. Brain, Kevin J. Fischer, Michael A. Childs
  • Patent number: 10586682
    Abstract: In one embodiment, a method of obtaining a beam deflection shape includes using a plurality of beams to write a line pattern on a substrate by deflecting the plurality of beams, the plurality of beams being beams in the i-th row (i is an integer satisfying 1?i?m) among multiple charged-particle beams including beams of m rows and n columns (m and n are integers equal to or greater than two), the deflection being performed in such a manner that a writing area for a beam in the j-th column (j is an integer satisfying 1?j?n?1) is continuously adjacent to a writing area for a beam in the (j+1)th column, measuring a degree of unevenness of an edge of the line pattern, and obtaining a deflection shape of the beam based on the degree of unevenness.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: March 10, 2020
    Assignee: NuFlare Technology, Inc.
    Inventors: Shunsuke Isaji, Rieko Nishimura
  • Patent number: 10546698
    Abstract: A composite electrode structure and methods of making and using thereof are disclosed. The structure has a metal substrate with a metal oxide layer. The average thickness of the metal oxide layer is less than 150 nm, and comprises at least a first metal and a second metal, wherein the first metal and the second metal are different elements. A plurality of carbon nanotubes is disposed on a first surface of the metal oxide layer. At least a portion of the carbon nanotubes are disposed such that one end of the carbon nanotube is positioned at least 5 nm below the surface of the metal oxide layer.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: January 28, 2020
    Assignee: ZapGo Ltd
    Inventors: Cattien V. Nguyen, You Li, Hoang Nguyen Ly, Darrell L. Niemann, Bevan Vo, Philip A. Kraus
  • Patent number: 10520808
    Abstract: Manufacturing methods are disclosed to produce DOE, HOE and Fresnel optical elements. These methods enable low cost manufacturing with high precision. The methods include lithography, roll-to-roll imprint and UV-casting.
    Type: Grant
    Filed: November 11, 2017
    Date of Patent: December 31, 2019
    Assignees: DOCOMO Incorporated
    Inventors: Fusao Ishii, Nakanishi Mikiko, Takahashi Kazuhiko, Abrakawa Yuji, Keiichi Murakami
  • Patent number: 10520820
    Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yu Liu, Wei-Han Lai, Tzu-Yang Lin, Ming-Hui Weng, Ching-Yu Chang, Chin-Hsiang Lin
  • Patent number: 10488755
    Abstract: A pattern forming method including a step of coating a substrate with an actinic ray-sensitive or radiation-sensitive resin composition and forming an actinic ray-sensitive or radiation-sensitive film; a step of simultaneously irradiating the actinic ray-sensitive or radiation-sensitive film with a plurality of electron beams; and a step of developing the actinic ray-sensitive or radiation-sensitive film after the irradiation with electron beams is provided. The composition contains a resin (A), a photoacid generator (B), and an acid diffusion control agent (C) and a molar ratio (Qp) between the photoacid generator (B) and the acid diffusion control agent (C), which is represented by Equation (1) is 0.3 or greater.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: November 26, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Hidehiro Mochizuki, Shuji Hirano, Akira Takada
  • Patent number: 10445450
    Abstract: In one embodiment, a generating method of drawing data includes generating a pixel map that includes dose amount information on each of pixels obtained by dividing a drawing area on an object into a mesh, extracting, from the pixel map, an island-shaped pixel map which is a group of multiple pixels in which the dose amount information is not zero, determining an order of definition of the dose amount information on the pixels in the island-shaped pixel map, and generating a compressed pixel map including a size of the pixels, information indicating the order of definition, coordinates of a pixel which is first in the order of definition in the island-shaped pixel map, and the dose amount information on the pixels in the island-shaped pixel map, the dose amount information being continuously defined based on the order of definition.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: October 15, 2019
    Assignee: NuFlare Technology, Inc.
    Inventors: Shigehiro Hara, Kenichi Yasui
  • Patent number: 10393642
    Abstract: A technique related to sorting entities is provided. An inlet is configured to receive a fluid, and an outlet is configured to exit the fluid. A nanopillar array, connected to the inlet and the outlet, is configured to allow the fluid to flow from the inlet to the outlet. The nanopillar array includes nanopillars arranged to separate entities by size. The nanopillars are arranged to have a gap separating one nanopillar from another nanopillar. The gap is constructed to be in a nanoscale range.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: August 27, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Yann A. Astier, Robert L. Bruce, Joshua T. Smith, Chao Wang, Benjamin H. Wunsch
  • Patent number: 10386713
    Abstract: A method of fabricating a mask, the method including performing first optical proximity correction on first segments, obtaining a correspondence relationship between a feature of each of the first segments defined based on optical characteristics of a mask and an aperture and a bias value associated with each of the first segments, performing second optical proximity correction on second segments, and fabricating a mask based on a result of the second optical proximity correction. A feature of each of the second segments is obtained based on optical characteristics of a mask and the aperture. A bias value, that is obtained to correspond to the feature of each of the second segments based on the correspondence relationship, is allocated as an initial bias value to each of the second segments.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: August 20, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Moon-Gyu Jeong
  • Patent number: 10372031
    Abstract: A method of making microstructures, the method including: providing a first substrate, setting a photoresist layer on a surface of the first substrate; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate comprises a second substrate and a carbon nanotube composite layer located on a surface of the second substrate; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: August 6, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Yuan-Hao Jin, Dong An, Shou-Shan Fan
  • Patent number: 10359695
    Abstract: The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout, which has a plurality of main features and a plurality of space blocks. The IC method also includes calculating an optimized block dummy density ratio r0 to optimize a uniformity of pattern density (UPD), determining a target block dummy density ratio R, determining size, pitch and type of a non-printable dummy feature, generating a pattern for dummy features and adding the dummy features in the IC design layout.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: July 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jyuh-Fuh Lin, Cheng-Hung Chen, Pei-Yi Liu, Wen-Chuan Wang, Shy-Jay Lin, Burn Jeng Lin
  • Patent number: 10350548
    Abstract: Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) or other materials are processed to produce useful intermediates and products, such as energy, fuels, foods or materials. For example, systems and methods are described that can be used to treat feedstock materials, such as cellulosic and/or lignocellulosic materials, in a vault in which the walls and optionally the ceiling include discrete units. Such vaults are re-configurable.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: July 16, 2019
    Assignee: Xyleco, Inc.
    Inventors: Marshall Medoff, Thomas Craig Masterman, Robert Paradis
  • Patent number: 10338474
    Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: July 2, 2019
    Assignee: Intel Corporation
    Inventors: Shakul Tandon, Yan A. Borodovsky, Charles H. Wallace, Paul A. Nyhus
  • Patent number: 10295339
    Abstract: A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: May 21, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Kazuhisa Hasumi, Masami Ikota
  • Patent number: 10290467
    Abstract: A method for fracturing or mask data preparation is disclosed in which a plurality of single-beam charged particle beam shots is used to create a plurality of multi-beam shots, where multi-beam exposure information is determined for each of the single-beam shots, and then the resulting multi-beam exposure information is used to generate a set of multi-beam shots. Additionally, a method for fracturing or mask data preparation is disclosed in which a plurality of single-beam shots is used to generate a set of multi-beam shots by calculating an image which the single-beam shots would form on a surface.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: May 14, 2019
    Assignee: D2S, Inc.
    Inventor: Akira Fujimura
  • Patent number: 10290528
    Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of real-time alignment of a wafer situated on a stage of an e-beam tool involves collecting backscattered electrons from an underlying patterned feature of the wafer while an e-beam column of the e-beam tool writes during scanning of the stage. The collecting is performed by an electron detector placed at the e-beam column bottom. The method also involves performing linear corrections of an alignment of the stage relative to the e-beam column based on the collecting.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: May 14, 2019
    Assignee: Intel Corporation
    Inventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
  • Patent number: 10234764
    Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimizes scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: March 19, 2019
    Assignee: The University of Manchester
    Inventors: Scott Lewis, Richard Winpenny, Stephen Yeates
  • Patent number: 10216088
    Abstract: The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: February 26, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Peng Liu, Wei Zhao, Xiao-Yang Lin, Duan-Liang Zhou, Chun-Hai Zhang, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 10175578
    Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: January 8, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Naoki Inoue, Naohiro Tango, Kei Yamamoto, Michihiro Shirakawa, Akiyoshi Goto
  • Patent number: 10134562
    Abstract: A multi charged particle beam writing apparatus includes a modulation rate data calculation processing circuitry to calculate, for each pixel being a unit region, a modulation rate of a beam to a pixel concerned and each modulation rate of a beam to at least one pixel at a periphery of the pixel concerned, and a corrected-dose calculation processing circuitry to calculate, for the each pixel, a corrected dose by adding a multiplied value obtained by multiplying the modulation rate of the pixel concerned in a modulation rate map by beam dose to the pixel concerned, and a multiplied value obtained by multiplying the modulation rate of the pixel concerned which becomes one of the at least one pixel at the periphery with respect to another pixel defined for the position of the pixel concerned by a beam dose to the another pixel.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: November 20, 2018
    Assignee: NuFlare Technology, Inc.
    Inventors: Yasuo Kato, Hideo Inoue, Hiroshi Matsumoto, Ryoh Kawana
  • Patent number: 10126652
    Abstract: This disclosure provides embodiments of an approach that enforces coexistence of multiple, aligned block copolymer morphologies within a single patterning layer.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: November 13, 2018
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Charles Thomas Black, Aaron Stein, Gwen Wright, Kevin G. Yager
  • Patent number: 10124091
    Abstract: Disclosed are compositions including a film enriched with a radioisotope relative to its natural abundance, wherein the film has a thickness of one to ten atomic or molecular layers, decay of the radioisotope comprises emission of electrons, and a majority of the emitted electrons have an energy less than or equal to 700 electron volts (ev). Also disclosed are methods for making the compositions. The compositions can be used in microarrays, nanoarrays, microparticles, nanoparticles, power sources, sensing devices, and medical devices; they may also be used in a method of delivering low-energy electrons to a liquid, solid, molecular layer, or cell.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: November 13, 2018
    Assignee: Trustees of Tufts College
    Inventors: Charles Sykes, Alex Pronschinske, Colin Murphy
  • Patent number: 10109453
    Abstract: Transmission microscopy imaging systems include a mask and/or other modulator situated to encode image beams, e.g., by deflecting the image beam with respect to the mask and/or sensor. The beam is modulated/masked either before or after transmission through a sample to induce a spatially and/or temporally encoded signal by modifying any of the beam/image components including the phase/coherence, intensity, or position of the beam at the sensor. For example, a mask can be placed/translated through the beam so that several masked beams are received by a sensor during a single sensor integration time. Images associated with multiple mask displacements are then used to reconstruct a video sequence using a compressive sensing method. Another example of masked modulation involves a mechanism for phase-retrieval, whereby the beam is modulated by a set of different masks in the image plane and each masked image is recorded in the diffraction plane.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: October 23, 2018
    Assignee: Battelle Memorial Institute
    Inventors: Andrew J. Stevens, Libor Kovarik, Nigel D. Browning, Andrey V. Liyu
  • Patent number: 10095157
    Abstract: A semiconductive roller is provided which includes a roller body including a tubular inner layer of an inner layer elastic material containing a softener, and an outer layer of an outer layer elastic material provided on an outer periphery of the inner layer. The outer layer elastic material has a swelling percentage of not higher than 1% as measured when the outer layer elastic material is immersed in the softener at 100° C. for 24 hours. Thus, the semiconductive roller has proper flexibility to be substantially free from imaging failures such as white voids, image density reduction and fogging, and is less liable to cause the contamination of a photoreceptor body and the like and the associated defective image formation which may otherwise occur due to the bleeding of the softener.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: October 9, 2018
    Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Daijiro Suzuki
  • Patent number: 10074515
    Abstract: According to one aspect of the present invention, a charged particle beam lithography method includes forming, such that a shape identical to a first figure pattern obtained using a first charged particle beam having a first resolution can be obtained by superimposing a plurality of second figure patterns, said plurality of second figure patterns that have different widths and are obtained by using a second charged particle beam having a second resolution higher than the first resolution; and performing multiple writing of the plurality of second figure patterns, which are stacked, by using the second charged particle beam.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: September 11, 2018
    Assignee: NuFlare Technology, Inc.
    Inventor: Munehiro Ogasawara
  • Patent number: 10042263
    Abstract: Cantilevers, SPM tips and nanomachining tools are created in the plane of wafers to obtain new and high performance parts. The method produces more parts for any given wafer, then conventional methods and allows every part on any given wafer to be different from any other, permitting great freedom in new SPM and nanomachining techniques and product development.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: August 7, 2018
    Inventor: Victor B. Kley
  • Patent number: 10042258
    Abstract: This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: August 7, 2018
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Noriaki Fujitani, Takafumi Endo, Rikimaru Sakamoto
  • Patent number: 10032603
    Abstract: A charged particle beam lithography apparatus according to an embodiment includes: a pattern-writing-data data storage processing circuitry configured to store pattern writing data in association with pattern attribute information; a shot dividing processing circuitry configured to divide the pattern writing data into shot data in association with the pattern attribute information; an indicator data storage processing circuitry configured to store an indicator for determining correction section regions to be merged on calculation in an approximation calculation of heat transfers, the indicator being associated with the pattern attribute information; a pattern writing schedule creator configured to create a pattern writing schedule based on the shot data; an approximation-calculation-method determining processing circuitry configured to determine an approximation calculation method of the heat transfers from other shots written before a shot to be written, the shot being associated with the shot data to be wri
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: July 24, 2018
    Assignee: NuFlare Technology, Inc.
    Inventors: Noriaki Nakayamada, Mizuna Suganuma
  • Patent number: 9989864
    Abstract: A measurement method including using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: June 5, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Johannes Jacobus Matheus Baselmans, Wilhelmus Petrus De Boeij
  • Patent number: 9971247
    Abstract: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.
    Type: Grant
    Filed: August 19, 2016
    Date of Patent: May 15, 2018
    Assignees: OSAKA UNIVERSITY, TOKYO ELECTRON LIMITED, JSR CORPORATION
    Inventors: Hisashi Nakagawa, Takehiko Naruoka, Tomoki Nagai, Seiichi Tagawa, Akihiro Oshima, Seiji Nagahara
  • Patent number: 9952511
    Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: April 24, 2018
    Assignee: Intel Corporation
    Inventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
  • Patent number: 9939729
    Abstract: A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: April 10, 2018
    Assignee: JSR CORPORATION
    Inventors: Hisashi Nakagawa, Takehiko Naruoka, Tomoki Nagai
  • Patent number: 9891519
    Abstract: A computer implemented method of fracturing free form target design into elementary shots for defined roughness of the contour comprises determining a first set of shots which pave the target design and determining a second set of shots to fill the gaps. The dose levels of overlapping shots in the first or second sets of shots are determined so the compounded dose is adequate to the resist threshold, considering the proximity effect of the actual imprint of shots on the insulated target. A dose geometry modulation is applied and rounded shot prints are produced by shots not circular that may overlap. The degree of overlap is determined as a function of desired optimization of fit criteria between a printed contour and the contour of the desired pattern. Placements and dimensions of the shots are determined by a plurality of fit criteria between printed contour and contour of the desired pattern.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: February 13, 2018
    Assignee: Aselta Nanographics
    Inventors: Serdar Manakli, Luc Martin
  • Patent number: 9874812
    Abstract: Methods of forming a hardmask material film are provided.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: January 23, 2018
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Myeong-koo Kim, Nae-ry Yu, Won-ki Lee, Hyun-woo Kim, Song-se Yi, Min-soo Kim, Jae-yeol Baek, Hyun-ji Song
  • Patent number: 9868119
    Abstract: A technique related to sorting entities is provided. An inlet is configured to receive a fluid, and an outlet is configured to exit the fluid. A nanopillar array, connected to the inlet and the outlet, is configured to allow the fluid to flow from the inlet to the outlet. The nanopillar array includes nanopillars arranged to separate entities by size. The nanopillars are arranged to have a gap separating one nanopillar from another nanopillar. The gap is constructed to be in a nanoscale range.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: January 16, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Yann A. Astier, Robert L. Bruce, Joshua T. Smith, Chao Wang, Benjamin H. Wunsch
  • Patent number: 9852885
    Abstract: A charged particle beam writing method includes acquiring a pair of a reference dose and a backscatter coefficient for proximity effect correction using a first settling time, acquiring a first relation between a temperature rise amount and a critical dimension variation amount using a second settling time shorter than the first settling time, the backscatter coefficient and the reference dose acquired, calculating a temperature correction parameter depending on a temperature rise amount, for correcting a dose, by using the first relation, and a second relation on a dose and a pattern critical dimension in a case of using the first settling time, calculating a beam irradiation dose by the reference dose and a dose coefficient obtained from the backscatter coefficient of the pair acquired, and the temperature correction parameter, and writing a pattern with a beam based on the dose calculated using the second settling time.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: December 26, 2017
    Assignee: NuFlare Technology, Inc.
    Inventors: Mizuna Suganuma, Noriaki Nakayamada
  • Patent number: 9810988
    Abstract: The objective of this invention is to provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape; and also to provide a pattern formation method employing that composition is described. The means for solving this objective is a composition for forming a topcoat layer, comprising a solvent and a fullerene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: November 7, 2017
    Assignee: AZ Electronic Material (Luxembourg) S.ár.l.
    Inventors: Xiaowei Wang, Masato Suzuki, Tetsuo Okayasu, Georg Pawlowski
  • Patent number: 9773520
    Abstract: The embodiments disclose a method of using a trimmed imprinted resist and chemical contrast pattern to guide a directed self-assembly (DSA) of a predetermined lamellar block copolymer (BCP), creating chromium (Cr) lamellar guiding lines using the BCP and DSA in a dry Cr lift-off process and etching the Cr lamellar guiding line patterns into a substrate to fabricate the imprint template.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: September 26, 2017
    Assignee: Seagate Technology LLC
    Inventors: XiaoMin Yang, Shuaigang Xiao, Yautzong Hsu, HongYing Wang, Kim Y. Lee
  • Patent number: 9754761
    Abstract: An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: September 5, 2017
    Assignee: KLA-Tencor Corporation
    Inventors: Hong Xiao, Christopher Maher
  • Patent number: 9726983
    Abstract: The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: August 8, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Patent number: 9715169
    Abstract: A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: July 25, 2017
    Assignee: D2S, Inc.
    Inventor: Akira Fujimura
  • Patent number: 9694545
    Abstract: A purge station assembly for use in an additive manufacturing system, which includes a purge station having a base bracket, a slide mount slidably engaged with the base bracket, and a contact head configured to clean a nozzle tip of a print head. The purge station assembly also includes a mechanism, such as a cable line, operably attached to the slide mount that allows an operator to mechanically move the slide mount relative to the base bracket from a location that is remote from the purge station.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: July 4, 2017
    Assignee: Stratasys, Inc.
    Inventors: Robert Skubic, Logan R. Kiene, Joel E. Farley, Benjamin L. Braton, James Flannigan, Joel Ostby
  • Patent number: RE47707
    Abstract: A apparatus according to an embodiment includes a unit to generate first blocks in a writing region in which at least one of writing groups respectively using different base doses is to be written, a unit to generate second blocks for proximity effect correction, in the each of the regions of the groups, a unit to calculate an area density in each of the first blocks, a unit to perform a weighting calculation on the area density for each of the first blocks by using a base dose of a corresponding group, a unit to calculate a dose coefficient for proximity effect correction, for each of the second blocks, by using a corresponding weighted area density, and a unit to calculate a dose by using the base dose of the each of the groups and the dose coefficient of the each of the second blocks.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: November 5, 2019
    Assignee: NuFlare Technology, Inc.
    Inventors: Yasuo Kato, Jun Yashima, Akihito Anpo