Electron Beam Imaging Patents (Class 430/296)
  • Patent number: 11560304
    Abstract: A method for functionalizing a surface of a dielectric plate that is transparent to visible light—to be able to examine the dielectric plate using optical microscopy—includes depositing a negative film on the dielectric slide. The negative film comprises a polymerizable composition that polymerizes when exposed to an electron beam. The polymerizable composition is polymerized—by exposing the negative film to the electronic beam—at a set of points representing a preset pattern. Non-polymerized portions of the polymerizable composition are dissolved—to develop the negative film—forming a set of pads of polymerized portions of the polymerizable composition. Each pad corresponds to one point of the preset pattern. A metal film is disposed on the negative film, and the developed negative film is dissolved to define holes through the metal film. Each of the holes corresponds to a base of one pad of the set of pads.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: January 24, 2023
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITÉ D'AIX-MARSEILLE
    Inventors: Kheya Sengupta, Emmanuelle Benard, Igor Ozerov, Frédéric Bedu, Hervé Dallaporta
  • Patent number: 11550222
    Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: January 10, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Tejinder Singh, Lifan Yan, Abhijit B. Mallick, Daniel Lee Diehl, Ho-yung Hwang, Jothilingam Ramalingam
  • Patent number: 11527484
    Abstract: An electronic device includes a substrate, and the substrate may include one or more layers. The one or more layers may include a dielectric material and may include one or more electrical traces. The electronic device may include a layer of conductive material, and the layer of conductive material may define a void in the conductive material. The electronic device may include a fiducial mark, and the fiducial mark may include a filler material positioned in the void defined by the conductive material. The fiducial mark may be coupled to the layer of conductive material. The filler material may have a lower reflectivity in comparison to the conductive material, for instance to provide a contrast with the conductive material.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: December 13, 2022
    Assignee: Intel Corporation
    Inventors: Jesse C. Jones, Gang Duan, Jason Gamba, Yosuke Kanaoka, Rahul N. Manepalli, Vishal Shajan
  • Patent number: 11453176
    Abstract: The present invention relates to a method for interconnecting components of a sporting good, in particular a sports shoe, and a sports shoe manufactured with such a method. The method may include (a.) forming a pattern element having at least one removable at least partially non-transparent or non-reflective portion, (b.) irradiating at least one of the first and the second component via the pattern element with heat radiation and (c.) interconnecting the irradiated first and second component.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: September 27, 2022
    Assignee: ADIDAS AG
    Inventors: Andreas Johannes Seefried, Clemens Paul Dyckmans, Maximilian Philipp Kurtz
  • Patent number: 11429023
    Abstract: A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: August 30, 2022
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke Domon, Naoya Inoue, Masaki Ohashi, Keiichi Masunaga, Masaaki Kotake
  • Patent number: 11417495
    Abstract: A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: August 16, 2022
    Assignee: NuFlare Technology, Inc.
    Inventors: Kazuhiko Inoue, Masataka Shiratsuchi, Munehiro Ogasawara
  • Patent number: 11404532
    Abstract: An integrated circuit having a fingered capacitor with multiple metal fingers formed in inverted-trapezoid-shaped trenches in a multi-layer structure having a polish stop layer over an ultra-low-K dielectric layer over a low-K dielectric layer over a dielectric cap layer. The ultra-low-K dielectric layer reduces capacitance variations between the fingers, while the polish stop layer prevents metal height variations that would otherwise result from performing CMP directly on the ultra-low-K dielectric layer. The layered structure may include another low-K dielectric layer over the polish stop layer that provides a soft landing for the CMP. The polish stop layer may be removed after the CMP polishing and another ultra-low-K dielectric layer may be formed to encapsulate the tops of the metal fingers in the ultra-low-K dielectric material.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: August 2, 2022
    Assignee: NXP B.V.
    Inventors: Chunshan Yin, Cheong Min Hong, Yu Chen
  • Patent number: 11294274
    Abstract: The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a porous pellicle frame, a mask with a patterned surface, a first thermal conductive adhesive layer that secures the pellicle membrane to the porous pellicle frame, and a second thermal conductive adhesive layer that secures the porous pellicle frame to the mask.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: April 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Amo Chen, Yun-Yue Lin, Ta-Cheng Lien, Hsin-Chang Lee, Chih-Cheng Lin, Jeng-Horng Chen
  • Patent number: 11262654
    Abstract: Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: March 1, 2022
    Assignee: Intel Corporation
    Inventors: Lauren Doyle, Marie Krysak, Patrick Theofanis, James Blackwell, Eungnak Han
  • Patent number: 11092523
    Abstract: The present invention provides methods for controllably forming a layer of amorphous ice and other amorphous solids on a substrate, and also provides cryoelectron microscopy (cryo-EM) sample preparation methods and systems that utilize in vacuo formation of amorphous ice and other solids. Formation of the amorphous solid layer can be independent of the deposition of sample molecules to be analyzed using electron microscopy, and allows for the generation of a uniformly thick layer. Optionally, mass spectrometry instruments are used to generate and purify molecules deposited on the generated amorphous solid layer. The techniques and systems described herein can deliver near ideal cryo-EM sample preparation to greatly increase resolution, sensitivity, scope, and throughput of cryo-EM protein imaging, and therefore greatly impact the field of structural biology.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: August 17, 2021
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Joshua Coon, Michael Westphall
  • Patent number: 11088337
    Abstract: In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Timothy Vasen, Marcus Johannes Henricus Van Dal, Gerben Doornbos
  • Patent number: 10981304
    Abstract: A method of nanoscale patterning is disclosed. The method comprises: mixing predetermined amounts of a first solvent and a second solvent to generate a solvent, the first solvent and the second solvent being immiscible with each other; dissolving a solute material in the solvent to generate a coating material, the solute material having solubility that is higher in the first solvent than in the second solvent; and applying the coating material onto a substrate to form a plurality of pinholes in the coating material. The formation of the plurality of pinholes is associated with suspension drops mostly comprised of the second solvent, separated from the solute material dissolved in the first solvent, in the coating material. A method of making a stamp with a nanoscale pattern is also disclosed based on the above method.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: April 20, 2021
    Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
    Inventors: Yabing Qi, Luis Katsuya Ono
  • Patent number: 10937630
    Abstract: Systems and methods are described herein for electron-beam lithography. In some aspects, a photo electron emitter and channel array assembly (PEECAA) may include a photo-electron emitting cathode having a uniform planar surface and an array of beam channels proximate to the cathode. In some cases, at least one of the cathode or the array of beam channels is removable from the PEECAA. The array of beam channels may include a grid of apertures, a plurality of beam channels, and a shared lens array including a plurality of lenses proximate to an exit of the plurality of beam channels. Individual apertures of the grid of apertures align with individual beam channels to allow electrons from the cathode to pass through the array of beam channels and the shared lens array to form a pixelated pattern, such that, upon exposure to the target, the pixelated pattern is permanently formed on the target.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: March 2, 2021
    Inventor: John Bennett
  • Patent number: 10919220
    Abstract: A technique to have precise materials deposition in the micro and nanometer scale relating to 3D printing. A microfluidic pipette and an atomic force microscopy (AFM) needle are used to position the pipette a distance from a working stage to avoid surface tension physics associated with droplet formation of pipette excreted material, “ink.” The combination provides greater control over both the amounts of placement of the ink. In practice, both the AFM needle and the pipette are lowered to a work stage (or the stage is raised to the AFM needle). The pipette excretes a pool of ink onto the stage and the AFM needle is placed into the pool. A unit of ink from the pool adheres to the AFM needle. The AFM needle then moved to a work space on the stage and deposits the ink in the work area through a predetermined printing technique. The system is capable of printing photoresist, polymers, nanomaterials, DNA, proteins, stem cells, semiconductors, metal, plastic and almost anything imaginable.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: February 16, 2021
    Assignee: CARBON DESIGN INNOVATIONS, INC.
    Inventor: Ramsey Stevens
  • Patent number: 10906332
    Abstract: A pretreatment solution for inkjet recording contains a photoacid generator that generates sulfonic acid through light exposure.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: February 2, 2021
    Assignee: KYOCERA Document Solutions Inc.
    Inventor: Katsuki Osanishi
  • Patent number: 10875252
    Abstract: The present invention relates to a method for interconnecting components of a sporting good, in particular a sports shoe, and a sports shoe manufactured with such a method. The method may include (a.) forming a pattern element having at least one removable at least partially non-transparent or non-reflective portion, (b.) irradiating at least one of the first and the second component via the pattern element with heat radiation and (c.) interconnecting the irradiated first and second component.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: December 29, 2020
    Assignee: adidas AG
    Inventors: Andreas Johannes Seefried, Clemens Paul Dyckmans, Maximilian Philipp Kurtz
  • Patent number: 10872188
    Abstract: Disclosed are mask definition tools, apparatus, methods, systems and computer program products configured to process data representing a semiconductor fabrication mask. A non-limiting example of a method includes performing a decomposition process on a full Transmission Cross Coefficient (TCC) using coherent optimal coherent systems (OCS) kernels; isolating a residual TCC that remains after some number of coherent kernels are extracted from the full TCC; and performing at least one decomposition process on the residual TCC using at least one loxicoherent system. The loxicoherent system uses a plurality of distinct non-coherent kernel functions and is a compound system containing a paired coherent system and an incoherent system that act in sequence. An output of the coherent system is input as a self-luminous quantity to the incoherent system, and the output of the incoherent system is an output of the loxicoherent system.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: December 22, 2020
    Assignee: International Business Machines Corporation
    Inventor: Alan E. Rosenbluth
  • Patent number: 10811492
    Abstract: A method of fabricating an integrated circuit includes applying photoresist to a MESA dielectric layer of a semiconductor structure, to generate a photoresist layer. The method also includes exposing the photoresist layer with a grayscale mask, to generate an exposed photoresist layer. The photoresist exposed layer includes a thick photoresist pattern in a first region, a thin photoresist pattern in a second region where a height of the thin photoresist pattern is less than half a height of the thick photoresist pattern, and a gap region between the thick photoresist pattern and the thin photoresist pattern.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: October 20, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Jeffrey Alan West, Byron Lovell Williams, John Britton Robbins
  • Patent number: 10761428
    Abstract: A method for fabricating calcite channels in a nanofluidic device is described. A photoresist layer is coated onto a top surface of a silicon nitride (SiN) substrate. After coating the photoresist layer, the photoresist layer is scanned with an electron beam in a predefined pattern. The scanned photoresist is developed to expose portions of the top surface of the SiN substrate in the predefined pattern. Calcite is deposited in the predefined pattern using atomic layer deposition (ALD) using a calcite precursor gas. Using a solvent, a remaining portion of the photoresist layer is removed to expose the deposited calcite in the predefined pattern and on the top surface of the SiN substrate, where a width of the deposited calcite is in range from 50 to 100 nanometers (nm).
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: September 1, 2020
    Assignee: Saudi Arabian Oil Company
    Inventors: Dong Kyu Cha, Mohammed Badri AlOtaibi, Ali Abdallah Al-Yousef
  • Patent number: 10748744
    Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes inputting an original set of exposure information for the area and inputting a target post-proximity effect correction (PEC) maximum dose. A local pattern density is calculated for the area of the pattern based on the original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PEC maximum dose.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: August 18, 2020
    Assignee: D2S, Inc.
    Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
  • Patent number: 10692696
    Abstract: A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: June 23, 2020
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Teunis Van De Peut, Marco Jan-Jaco Wieland
  • Patent number: 10663708
    Abstract: Coordinates of a first region extraction window, a first sample stage coordinate, a second sample stage coordinate, and a second region extraction window, including images of one sample stage and an observation target tissues of a sample when the one sample stage is respectively positioned on two microscopes are respectively obtained. Based on difference between the first sample stage coordinate and the second sample stage coordinate, the second sample stage coordinate is corrected. Based on the obtained corrected second sample stage coordinate, the second positioning unit is moved from the second non-observation position to the second observation position where the second region extraction window is located at a position corresponding to the coordinate position of the first region extraction window.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: May 26, 2020
    Assignees: NAKAMURA SANGYO GAKUEN, INTERNATIONAL SCIENCE TECHNOLOGY CO., LTD., TCK INC.
    Inventors: Shinichiro Isobe, Takaaki Kanemaru, Shin-ichi Takasu, Koji Kosaka, Takashi Oe
  • Patent number: 10659229
    Abstract: Methods, systems and devices for using charged particle beams (CPBs) to write different die-specific, non-volatile, electronically readable data to different dies on a substrate. CPBs can fully write die-specific data within the chip interconnect structure during the device fabrication process, at high resolution and within a small area, allowing one or multiple usefully-sized values to be securely written to service device functions. CPBs can write die-specific data in areas readable or unreadable through a (or any) communications bus. Die-specific data can be used for, e.g.: encryption keys; communications addresses; manufacturing information (including die identification numbers); random number generator improvements; or single, nested, or compartmentalized security codes. Die-specific data and locations for writing die-specific data can be kept in encrypted form when not being written to the substrate to conditionally or permanently prevent any knowledge of said data and locations.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: May 19, 2020
    Inventors: Michael C. Smayling, David K. Lam, Theodore A. Prescop, Kevin M. Monahan
  • Patent number: 10613441
    Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: April 7, 2020
    Assignee: The University of Manchester
    Inventors: Scott Lewis, Richard Winpenny, Stephen Yeates
  • Patent number: 10593626
    Abstract: A method including forming a dielectric layer on a contact point of an integrated circuit structure; forming a hardmask including a dielectric material on a surface of the dielectric layer; and forming at least one via in the dielectric layer to the contact point using the hardmask as a pattern. An apparatus including a circuit substrate including at least one active layer including a contact point; a dielectric layer on the at least one active layer; a hardmask including a dielectric material having a least one opening therein for an interconnect material; and an interconnect material in the at least one opening of the hardmask and through the dielectric layer to the contact point.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: March 17, 2020
    Assignee: Intel Corporation
    Inventors: Ruth A. Brain, Kevin J. Fischer, Michael A. Childs
  • Patent number: 10586682
    Abstract: In one embodiment, a method of obtaining a beam deflection shape includes using a plurality of beams to write a line pattern on a substrate by deflecting the plurality of beams, the plurality of beams being beams in the i-th row (i is an integer satisfying 1?i?m) among multiple charged-particle beams including beams of m rows and n columns (m and n are integers equal to or greater than two), the deflection being performed in such a manner that a writing area for a beam in the j-th column (j is an integer satisfying 1?j?n?1) is continuously adjacent to a writing area for a beam in the (j+1)th column, measuring a degree of unevenness of an edge of the line pattern, and obtaining a deflection shape of the beam based on the degree of unevenness.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: March 10, 2020
    Assignee: NuFlare Technology, Inc.
    Inventors: Shunsuke Isaji, Rieko Nishimura
  • Patent number: 10546698
    Abstract: A composite electrode structure and methods of making and using thereof are disclosed. The structure has a metal substrate with a metal oxide layer. The average thickness of the metal oxide layer is less than 150 nm, and comprises at least a first metal and a second metal, wherein the first metal and the second metal are different elements. A plurality of carbon nanotubes is disposed on a first surface of the metal oxide layer. At least a portion of the carbon nanotubes are disposed such that one end of the carbon nanotube is positioned at least 5 nm below the surface of the metal oxide layer.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: January 28, 2020
    Assignee: ZapGo Ltd
    Inventors: Cattien V. Nguyen, You Li, Hoang Nguyen Ly, Darrell L. Niemann, Bevan Vo, Philip A. Kraus
  • Patent number: 10520808
    Abstract: Manufacturing methods are disclosed to produce DOE, HOE and Fresnel optical elements. These methods enable low cost manufacturing with high precision. The methods include lithography, roll-to-roll imprint and UV-casting.
    Type: Grant
    Filed: November 11, 2017
    Date of Patent: December 31, 2019
    Assignees: DOCOMO Incorporated
    Inventors: Fusao Ishii, Nakanishi Mikiko, Takahashi Kazuhiko, Abrakawa Yuji, Keiichi Murakami
  • Patent number: 10520820
    Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yu Liu, Wei-Han Lai, Tzu-Yang Lin, Ming-Hui Weng, Ching-Yu Chang, Chin-Hsiang Lin
  • Patent number: 10488755
    Abstract: A pattern forming method including a step of coating a substrate with an actinic ray-sensitive or radiation-sensitive resin composition and forming an actinic ray-sensitive or radiation-sensitive film; a step of simultaneously irradiating the actinic ray-sensitive or radiation-sensitive film with a plurality of electron beams; and a step of developing the actinic ray-sensitive or radiation-sensitive film after the irradiation with electron beams is provided. The composition contains a resin (A), a photoacid generator (B), and an acid diffusion control agent (C) and a molar ratio (Qp) between the photoacid generator (B) and the acid diffusion control agent (C), which is represented by Equation (1) is 0.3 or greater.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: November 26, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Hidehiro Mochizuki, Shuji Hirano, Akira Takada
  • Patent number: 10445450
    Abstract: In one embodiment, a generating method of drawing data includes generating a pixel map that includes dose amount information on each of pixels obtained by dividing a drawing area on an object into a mesh, extracting, from the pixel map, an island-shaped pixel map which is a group of multiple pixels in which the dose amount information is not zero, determining an order of definition of the dose amount information on the pixels in the island-shaped pixel map, and generating a compressed pixel map including a size of the pixels, information indicating the order of definition, coordinates of a pixel which is first in the order of definition in the island-shaped pixel map, and the dose amount information on the pixels in the island-shaped pixel map, the dose amount information being continuously defined based on the order of definition.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: October 15, 2019
    Assignee: NuFlare Technology, Inc.
    Inventors: Shigehiro Hara, Kenichi Yasui
  • Patent number: 10393642
    Abstract: A technique related to sorting entities is provided. An inlet is configured to receive a fluid, and an outlet is configured to exit the fluid. A nanopillar array, connected to the inlet and the outlet, is configured to allow the fluid to flow from the inlet to the outlet. The nanopillar array includes nanopillars arranged to separate entities by size. The nanopillars are arranged to have a gap separating one nanopillar from another nanopillar. The gap is constructed to be in a nanoscale range.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: August 27, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Yann A. Astier, Robert L. Bruce, Joshua T. Smith, Chao Wang, Benjamin H. Wunsch
  • Patent number: 10386713
    Abstract: A method of fabricating a mask, the method including performing first optical proximity correction on first segments, obtaining a correspondence relationship between a feature of each of the first segments defined based on optical characteristics of a mask and an aperture and a bias value associated with each of the first segments, performing second optical proximity correction on second segments, and fabricating a mask based on a result of the second optical proximity correction. A feature of each of the second segments is obtained based on optical characteristics of a mask and the aperture. A bias value, that is obtained to correspond to the feature of each of the second segments based on the correspondence relationship, is allocated as an initial bias value to each of the second segments.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: August 20, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Moon-Gyu Jeong
  • Patent number: 10372031
    Abstract: A method of making microstructures, the method including: providing a first substrate, setting a photoresist layer on a surface of the first substrate; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate comprises a second substrate and a carbon nanotube composite layer located on a surface of the second substrate; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: August 6, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Yuan-Hao Jin, Dong An, Shou-Shan Fan
  • Patent number: 10359695
    Abstract: The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout, which has a plurality of main features and a plurality of space blocks. The IC method also includes calculating an optimized block dummy density ratio r0 to optimize a uniformity of pattern density (UPD), determining a target block dummy density ratio R, determining size, pitch and type of a non-printable dummy feature, generating a pattern for dummy features and adding the dummy features in the IC design layout.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: July 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jyuh-Fuh Lin, Cheng-Hung Chen, Pei-Yi Liu, Wen-Chuan Wang, Shy-Jay Lin, Burn Jeng Lin
  • Patent number: 10350548
    Abstract: Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) or other materials are processed to produce useful intermediates and products, such as energy, fuels, foods or materials. For example, systems and methods are described that can be used to treat feedstock materials, such as cellulosic and/or lignocellulosic materials, in a vault in which the walls and optionally the ceiling include discrete units. Such vaults are re-configurable.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: July 16, 2019
    Assignee: Xyleco, Inc.
    Inventors: Marshall Medoff, Thomas Craig Masterman, Robert Paradis
  • Patent number: 10338474
    Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: July 2, 2019
    Assignee: Intel Corporation
    Inventors: Shakul Tandon, Yan A. Borodovsky, Charles H. Wallace, Paul A. Nyhus
  • Patent number: 10295339
    Abstract: A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: May 21, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Kazuhisa Hasumi, Masami Ikota
  • Patent number: 10290528
    Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of real-time alignment of a wafer situated on a stage of an e-beam tool involves collecting backscattered electrons from an underlying patterned feature of the wafer while an e-beam column of the e-beam tool writes during scanning of the stage. The collecting is performed by an electron detector placed at the e-beam column bottom. The method also involves performing linear corrections of an alignment of the stage relative to the e-beam column based on the collecting.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: May 14, 2019
    Assignee: Intel Corporation
    Inventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
  • Patent number: 10290467
    Abstract: A method for fracturing or mask data preparation is disclosed in which a plurality of single-beam charged particle beam shots is used to create a plurality of multi-beam shots, where multi-beam exposure information is determined for each of the single-beam shots, and then the resulting multi-beam exposure information is used to generate a set of multi-beam shots. Additionally, a method for fracturing or mask data preparation is disclosed in which a plurality of single-beam shots is used to generate a set of multi-beam shots by calculating an image which the single-beam shots would form on a surface.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: May 14, 2019
    Assignee: D2S, Inc.
    Inventor: Akira Fujimura
  • Patent number: 10234764
    Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimizes scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: March 19, 2019
    Assignee: The University of Manchester
    Inventors: Scott Lewis, Richard Winpenny, Stephen Yeates
  • Patent number: 10216088
    Abstract: The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: February 26, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Peng Liu, Wei Zhao, Xiao-Yang Lin, Duan-Liang Zhou, Chun-Hai Zhang, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 10175578
    Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: January 8, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Naoki Inoue, Naohiro Tango, Kei Yamamoto, Michihiro Shirakawa, Akiyoshi Goto
  • Patent number: 10134562
    Abstract: A multi charged particle beam writing apparatus includes a modulation rate data calculation processing circuitry to calculate, for each pixel being a unit region, a modulation rate of a beam to a pixel concerned and each modulation rate of a beam to at least one pixel at a periphery of the pixel concerned, and a corrected-dose calculation processing circuitry to calculate, for the each pixel, a corrected dose by adding a multiplied value obtained by multiplying the modulation rate of the pixel concerned in a modulation rate map by beam dose to the pixel concerned, and a multiplied value obtained by multiplying the modulation rate of the pixel concerned which becomes one of the at least one pixel at the periphery with respect to another pixel defined for the position of the pixel concerned by a beam dose to the another pixel.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: November 20, 2018
    Assignee: NuFlare Technology, Inc.
    Inventors: Yasuo Kato, Hideo Inoue, Hiroshi Matsumoto, Ryoh Kawana
  • Patent number: 10124091
    Abstract: Disclosed are compositions including a film enriched with a radioisotope relative to its natural abundance, wherein the film has a thickness of one to ten atomic or molecular layers, decay of the radioisotope comprises emission of electrons, and a majority of the emitted electrons have an energy less than or equal to 700 electron volts (ev). Also disclosed are methods for making the compositions. The compositions can be used in microarrays, nanoarrays, microparticles, nanoparticles, power sources, sensing devices, and medical devices; they may also be used in a method of delivering low-energy electrons to a liquid, solid, molecular layer, or cell.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: November 13, 2018
    Assignee: Trustees of Tufts College
    Inventors: Charles Sykes, Alex Pronschinske, Colin Murphy
  • Patent number: 10126652
    Abstract: This disclosure provides embodiments of an approach that enforces coexistence of multiple, aligned block copolymer morphologies within a single patterning layer.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: November 13, 2018
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Charles Thomas Black, Aaron Stein, Gwen Wright, Kevin G. Yager
  • Patent number: 10109453
    Abstract: Transmission microscopy imaging systems include a mask and/or other modulator situated to encode image beams, e.g., by deflecting the image beam with respect to the mask and/or sensor. The beam is modulated/masked either before or after transmission through a sample to induce a spatially and/or temporally encoded signal by modifying any of the beam/image components including the phase/coherence, intensity, or position of the beam at the sensor. For example, a mask can be placed/translated through the beam so that several masked beams are received by a sensor during a single sensor integration time. Images associated with multiple mask displacements are then used to reconstruct a video sequence using a compressive sensing method. Another example of masked modulation involves a mechanism for phase-retrieval, whereby the beam is modulated by a set of different masks in the image plane and each masked image is recorded in the diffraction plane.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: October 23, 2018
    Assignee: Battelle Memorial Institute
    Inventors: Andrew J. Stevens, Libor Kovarik, Nigel D. Browning, Andrey V. Liyu
  • Patent number: 10095157
    Abstract: A semiconductive roller is provided which includes a roller body including a tubular inner layer of an inner layer elastic material containing a softener, and an outer layer of an outer layer elastic material provided on an outer periphery of the inner layer. The outer layer elastic material has a swelling percentage of not higher than 1% as measured when the outer layer elastic material is immersed in the softener at 100° C. for 24 hours. Thus, the semiconductive roller has proper flexibility to be substantially free from imaging failures such as white voids, image density reduction and fogging, and is less liable to cause the contamination of a photoreceptor body and the like and the associated defective image formation which may otherwise occur due to the bleeding of the softener.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: October 9, 2018
    Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Daijiro Suzuki
  • Patent number: 10074515
    Abstract: According to one aspect of the present invention, a charged particle beam lithography method includes forming, such that a shape identical to a first figure pattern obtained using a first charged particle beam having a first resolution can be obtained by superimposing a plurality of second figure patterns, said plurality of second figure patterns that have different widths and are obtained by using a second charged particle beam having a second resolution higher than the first resolution; and performing multiple writing of the plurality of second figure patterns, which are stacked, by using the second charged particle beam.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: September 11, 2018
    Assignee: NuFlare Technology, Inc.
    Inventor: Munehiro Ogasawara
  • Patent number: RE47707
    Abstract: A apparatus according to an embodiment includes a unit to generate first blocks in a writing region in which at least one of writing groups respectively using different base doses is to be written, a unit to generate second blocks for proximity effect correction, in the each of the regions of the groups, a unit to calculate an area density in each of the first blocks, a unit to perform a weighting calculation on the area density for each of the first blocks by using a base dose of a corresponding group, a unit to calculate a dose coefficient for proximity effect correction, for each of the second blocks, by using a corresponding weighted area density, and a unit to calculate a dose by using the base dose of the each of the groups and the dose coefficient of the each of the second blocks.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: November 5, 2019
    Assignee: NuFlare Technology, Inc.
    Inventors: Yasuo Kato, Jun Yashima, Akihito Anpo