Abstract: A resist composition comprising an ammonium salt and fluorine-containing polymer comprising repeat units AU having an ammonium salt structure of an iodized or brominated phenol compound and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.

Abstract: A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, which contains a resin component (A1) exhibiting changed solubility in a developing solution under action of acid, the resin component (A1) has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents a cyclic acid dissociable group, q represents an integer in a range of 0 to 3, and n represents an integer of 1 or more, provided that n?q×2+4 is satisfied

Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group having 1 to 6 carbon atoms which may have a halogen, hydrogen or halogen atom, R2 and R3 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, R4 represents a fluorine atom, an alkyl fluoride group having 1 to 6 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—, R5 represents a hydrogen atom, an alkylcarbonyl group having 2 to 6 carbon atoms or an acid-labile group, m2 represents an integer of 1 to 4, m4 represents an integer of 0 to 3, and m5 represents 1 or 2, in which 2?m2+m4+m5?5.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, and a resist composition including the same: wherein R1, R2 and R3 each represent a hydroxy group, *—O—R10, *—O—CO—O—R10, etc.; L10 represents an alkanediyl group; R10 represents an acid-labile group; R4, R5, R6, R7, R8 and R9 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A1, A2 and A3 each represent a hydrocarbon group which may have a substituent, and —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—; m1 represents an integer of 1 to 5, m2, m3, m8 and m9 represent an integer of 0 to 5, m4 to m7 represent an integer of 0 to 4, 1?m1+m7?5, 0?m2+m8?5, 0?m3+m9?5; and AI? represents an organic anion.

Abstract: The present invention relates to a homopolymer, copolymer, block copolymer, and statistical copolymer comprising plural polyol monomeric units. The polyol monomeric units being acrylated and acylated or acetalized. The acrylated and acylated or acetalized polyol monomeric units have an average degree of acrylation which is 1 or more, but less than the number of the hydroxyl groups of the polyol and have an average degree of acylation or acetalization which is 1 or more, but less than the number of the hydroxyl groups of the polyol. The present invention also relates to a method of making the homopolymers, copolymers, block copolymers, and statistical copolymers, and using them in various applications, such as asphalt rubber modifiers, adhesives, or an additive in a fracking fluid for oil fracking.

Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom; L1 represents a single bond or —CO—O*; R3 represents an alkyl group, and —CH2— included in the group may be replaced by —O— or —CO; R4 represents a fluorine atom, an alkyl fluoride group or an alkyl group, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—; R5 represents a hydrogen atom, an alkylcarbonyl group or an acid-labile group; m2 and m3 represent an integer of 1 to 3, m4 represents an integer of 0 to 2, and m5 represents 1 or 2, in which 3?m2+m3+m4+m5?5.

Abstract: An optical filter, a sensor device including the optical filter, and a method of fabricating the optical filter are provided. The optical filter includes one or more dielectric layers and one or more metal layers stacked in alternation. The metal layers are intrinsically protected by the dielectric layers. In particular, the metal layers have tapered edges that are protectively covered by one or more of the dielectric layers.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

Abstract: The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

Abstract: A resist composition containing a resin component (A1) having a constitutional unit derived from a compound represented by General Formula (a01-1).

Abstract: A method and apparatus for forming a resist pattern may be provided. In the method for forming a resist pattern, a resist layer may be formed on a base layer, an electric field may be applied to the resist layer in a thickness direction of the resist layer, and a portion of the resist layer may be exposed with extreme ultraviolet (EUV) light while applying the electric field. A lithography apparatus for performing the method of forming a resist pattern may include at least an exposure part and an electric field forming part. The exposure part may be configured to expose a portion of the resist layer with extreme ultraviolet (EUV) light. The electric field forming part may be configured to apply an electric field to the resist layer.

Abstract: Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Abstract: A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.

Abstract: A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2).

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

Abstract: In this work is presented a method for fabrication of high-aspect ratio structures through spalling effect. The spalling is achieved through lithography, etching and sputtering processes, thus providing the flexibility to position the spalled structures according to the application requirements. This method has been successfully demonstrated for metal-oxides and metals. The width of the fabricated structures is dependent on the thickness of the film deposited by sputtering, where structures as small as 20 nm in width have been obtained.

Abstract: A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R12 and R13 each independently represents a chain hydrocarbon group, or R12 and R13 are mutually bonded to form a cyclic group

Abstract: A black photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin, (B) carbon black, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved reliability with respect to adhesion and crack resistance, resolution and flexibility while maintaining satisfactory light shielding properties.

Abstract: The present specification relates to a binder resin, a photosensitive resin composition, an insulating film and a semiconductor device.

Abstract: Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator: wherein, in formula (I), R1 represents a halogen atom or an alkyl fluoride group having 1 to 6 carbon atoms, m1 represents an integer of 1 to 5, and when m1 is 2 or more, a plurality of R1 may be the same or different from each other.

Abstract: A patterning method includes providing a photosensitive composition on a material layer. The photosensitive composition includes one part by weight of a photo sensitive compound, 1.5 to 8 parts by weight of a resin, and 10 to 40 parts by weight of a diluent. The photosensitive compound has a chemical structure of The patterning method further includes removing the diluent in the photosensitive composition to form a photoresist layer, exposing the photoresist layer, and removing an exposed part of the photoresist layer to expose a part of the material layer.

Abstract: Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator, the resin having an acid-labile group including at least one selected from the group consisting of a structural unit represented by formula (a1-1) and a structural unit represented by formula (a1-2):

Abstract: This disclosure relates to functionalized polyhedral oligomeric silsesquioxanes (POSS) and polymeric membranes containing the functionalized POSS. This disclosure also relates to methods of using the membranes for natural gas liquid recovery, such as removal and recovery of C3+ hydrocarbons from natural gas.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

Abstract: A resist composition that generates an acid upon exposure is soluble in a developing solution, and is changed by action of an acid. The resist composition contains a resin component having solubility in a developing solution, which is changed by action of an acid, and has a constitutional unit represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a single bond or a linking group; Ax represents a sulfonyl group or a sulfoxide group; and Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group.

Abstract: The present disclosure provides a filter device and a photoresist coating system, and the filter device includes: a liquid storage tank, configured to hold photoresist to be filtered; a stirring structure, including a stirring tank and a stirring assembly at least partially received in the stirring tank; a first pipeline, one end of the first pipeline communicates with the liquid storage tank, and the other end of the first pipeline communicates with the stirring tank; a first filter assembly, provided on the first pipeline and located between the liquid storage tank and the stirring tank; a first pressure detection assembly, provided on the first pipeline and configured to detect a pressure of the photoresist in the first pipeline; and a second pipeline, one end of the second pipeline communicates with the stirring tank, and the other end of the second pipeline communicates with the coating device.

Abstract: The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 ?/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.

Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

Abstract: The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).

Abstract: Provided is a compound that can be used as a base resin for a photosensitive resin composition. The photosensitive resin can form a fine pattern and can achieve high resolution without impairing mechanical strength and solubility. The compound is represented by the general formula (1): wherein Z represents a linear, branched or cyclic divalent hydrocarbon group having 2 to 30 carbon atoms; X1 to X3 represent any of —CO2—, —CONRX1—, —O—, —NRX1—, —S—, —SO2—, —SO3— and —SO2NRX1— and may be the same as or different from each other, provided that RX1 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms; Ar represents a divalent aromatic group having 2 to 30 carbon atoms; L1 and L2 independently represent a divalent hydrocarbon group having 1 to 30 carbon atoms; and x and y are each independently 0 or 1.

Abstract: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,

Abstract: Provided are a photosensitive resin composition in which warping of a cured film after curing is decreased and lithographic properties in a case of forming a pattern are excellent, a cured film, a laminate, a method for producing a cured film, and a semiconductor device. The photosensitive resin composition includes a polyimide precursor including a repeating unit including a biphenyl structure and a photopolymerization initiator having an oxime structure capable of generating an aryl radical by being irradiated with light.

Abstract: The present application provides a photoresist, a display panel, and a display device. The photoresist is with a photosensitive polymerizable compound, wherein under irradiation of light of a first wavelength, the photosensitive polymerizable compound behaves as a hydrophilic polymerizable compound, and under irradiation of light of a second wavelength, the photosensitive polymerizable compound behaves as a hydrophobic polymerizable compound.

Abstract: A photosensitive resin composition is provided comprising 100 pbw of a polyimide silicone containing a primary alcoholic hydroxyl group, a crosslinker, a photoacid generator, a polyfunctional epoxy compound, 1-70 pbw of a filler having an average particle size of 0.01-20.0 ?m, and 0.01-30 pbw of a colorant. The resin composition is colored and photosensitive and cures into a product having an improved modulus.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by General Formula (1). In General Formula (1), X represents a sulfur atom or an iodine atom. m represents 1 or 2, in a case where X is a sulfur atom, m is 2, and in a case where X is an iodine atom, m is 1. R1's each independently represent an alkyl group or alkenyl group which may include a heteroatom, an aromatic heterocyclic group, or an aromatic hydrocarbon ring group. Further, in a case where m is 2, two R1's may be bonded to each other to form a ring. R2 represents a divalent linking group. R3 represents a divalent linking group having no aromatic group. Y? represents an anionic moiety. The pKa of the compound represented by General Formula (1) as Y? is protonated is ?2.0 to 1.5.

Abstract: New stabilizers for solutions of choline hydroxide and related quaternary trialkylalkanolamines are disclosed. The stabilizers are alkyl hydroxylamines, hydrazines, hydrazides, or derivates thereof, including compounds containing more than one such functionality. The new stabilizers are effective at concentrations less than about 1000 ppm, and choline hydroxide solutions stabilized with the compounds described herein typically have Gardner Color change less than about 2.0 after six months at reasonable temperatures.

Abstract: Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.

Abstract: Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: An immersion upper layer film-forming composition includes [A] a polymer component that includes a polymer (A1), and [B] a solvent, the polymer (A1) including a structural unit (I) that includes a group represented by the following formula (i). The structural unit (I) is preferably a structural unit (I-1) represented by the following formula (1). The polymer component [A] preferably further includes a structural unit (II-1) represented by the following formula (2), the structural unit (II-1) being included in the polymer (A1) or a polymer other than the polymer (A1). The polymer component [A] preferably further includes a structural unit (III) that includes a carboxyl group, the structural unit (III) being included in the polymer (A1) or a polymer other than the polymer (A1).

Abstract: Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.

Abstract: There is provided a resist underlayer film forming composition that is used in a lithography process for the production of semiconductor devices and that can be developed with an alkaline developer for photoresists, and a method of forming a photoresist pattern by using the resist underlayer film forming composition. The resist underlayer film forming composition used in a lithography process for a production of a semiconductor device comprising: an alkali-soluble resin (a); a polynuclear phenol (b); a compound (c) having at least two vinylether groups; and a photoacid generator (d). The alkali-soluble resin (a) may be a polymer containing a unit structure having a carboxyl group, and the polynuclear phenol (b) may be a compound having 2 to 30 phenolic hydroxyl groups in the molecule.

Abstract: An immersion upper layer film-forming composition includes [A] a polymer component that includes a polymer (A1), and [B] a solvent, the polymer (A1) including a structural unit (I) that includes a group represented by the following formula (i). The structural unit (I) is preferably a structural unit (I-1) represented by the following formula (1). The polymer component [A] preferably further includes a structural unit (II-1) represented by the following formula (2), the structural unit (II-1) being included in the polymer (A1) or a polymer other than the polymer (A1). The polymer component [A] preferably further includes a structural unit (III) that includes a carboxyl group, the structural unit (III) being included in the polymer (A1) or a polymer other than the polymer (A1).

Abstract: Using a resist composition which exhibits decreased solubility in an organic solvent upon exposure, patterning is conducted by a negative-tone development using a developing solution containing an organic solvent to form a first resist pattern on the substrate, wherein the first resist pattern is composed of a plurality of exposed portions. Then, a pattern reversing composition containing an organic solvent which does not dissolve the first resist pattern is applied to the substrate on which the first resist pattern has been formed, to form a pattern reversing film. Next, the first resist pattern is removed and patterning of the pattern reversing film is conducted by an alkali developing to form a reversed pattern in which the image of the first resist pattern is reversed.

Abstract: A chemically amplified positive resist composition is provided comprising a substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, a poly(meth)acrylate polymer having Mw of 1,000-500,000, and an acid generator in a solvent. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

Abstract: There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

Abstract: A sensor for the in vivo detection of glucose comprises: components of an assay for glucose, a readout of which is a detectable optical signal which can be interrogated transcutaneously by external optical means when the sensor is implanted in vivo; and a shell of biodegradable material encapsulating the assay components while allowing analyte to contact the assay components, wherein the biodegradable material comprises a co-polymer having hydrophobic and hydrophilic units. A method of preparing such a sensor preferably comprises coacervation, solvent evaporation and/or extraction, spray drying, spray coating, spray chilling, rotary disk atomisation, fluid bed coating, coextrusion and/or pan coating. A method of detecting glucose using such a sensor suitably comprises implantation of the sensor into the skin of a mammal, transdermal detection or measurement of glucose using external optical means and degradation of the biodegradable material.

Abstract: Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.