Abstract: The present invention is a resist composition, including: a resin (A) having: a repeating unit represented by the general formula (p-1); a repeating unit represented by the general formula (a-1); and a repeating unit represented by the general formula (b-1); a resin (B) having: a repeating unit represented by the general formula (p-2); a repeating unit represented by the general formula (a-1); and a repeating unit represented by the general formula (b-1); and a solvent (D), wherein a content of the resin (A) contained in the resist composition is smaller than a content of the resin (B). This provides a resist composition that reduces roughness and size uniformity of a hole pattern with high resolution exceeding that of conventional resist materials even with a high exposure-dose region, that has good pattern shape after exposure, and that has excellent etching resistance.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition has an excellent resolution and is capable of forming a pattern having suppressed defects. A resist film, a pattern forming method, and a method for manufacturing an electronic device employing the actinic ray- or radiation-sensitive resin composition are provided. The actinic ray- or radiation-sensitive resin composition includes a resin whose polarity increases through decomposition by an action of an acid, and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin whose polarity increases through decomposition by an action of an acid includes one or more selected from repeating units represented by Formulae (1) to (5), and the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more of a compound (I) or a compound (II).

Abstract: The present invention relates to a photoresist composition comprising a polymer(s), a photo acid generator(s), a (C) compound(s) comprising unit EO and unit PO, and a solvent(s). And the present invention relates to a method for manufacturing a photoresist coating, etched photoresist coating, and etched Si containing layer(s). And the present invention relates to a method for a a manufacturing a device.

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition, comprising: preparing an intermediate solution which includes a photoacid generator and a solvent; and mixing the intermediate solution with at least a resin to prepare an actinic ray-sensitive or radiation-sensitive resin composition having a viscosity of 10 mPa·s or more.

Abstract: A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having an acid labile group of aromatic group-containing cyclic secondary or tertiary ester type as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

Abstract: The disclosed subject matter relates to resist compositions that include: (A) an acetal functionalized acrylic polymer component comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7); (B) a tert-alkyl functionalized acrylic polymer component comprising repeat units selected from ones having structure (1a), (2a), (3a), (4a), (5a), (6a), and (7a); (C) a phenolic resin component comprising a Novolak-based resin; (D) a photo acid generator (PAG) component and (E) a solvent component where the resist compositions does not include a diazonaphthoquinone (DNQ) component.

Abstract: A light emitting element according to an embodiment includes a first electrode, a second electrode overlapping the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron transport region disposed between the emission layer and the second electrode, wherein the electron transport region includes a thermal acid generator (TAG). A method of manufacturing a light emitting element is also provided.

Abstract: An extreme ultraviolet (EUV) photosensitive polymer includes a first repeating unit represented by Chemical Formula 1. (in Chemical Formula 1, R1 is a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a C6 to C18 aryl group, a haloaryl group, a C7 to C18 arylalkyl group, a C7 to C18 alkylaryl group, or a C6 to C18 haloaryl group, and R2 is a direct bond, a C1 to C10 alkylene group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, a C6 to C18 aryl group, a C7 to C18 arylalkyl group, or a C7 to C18 alkylaryl group).

Abstract: An image projection system is provided. The system can be used for performing lithography. The system includes a deuterium light source, a converging lens coupled to the deuterium light source. The system includes an aperture configured to provide image tiling disposed adjacent to the converging lens. The system includes a movable stage disposed adjacent to the aperture. A method of fabricating an optical device is provided. The method includes depositing a resist over a substrate and determining an exposure pattern for the optical device. The method includes exposing a portion of the resist with a light beam based on the determined exposure pattern. Exposing the portion of the resist includes directing the light beam from a deuterium light source to the substrate and developing the resist.

Abstract: Disclosed are a carboxylate represented by formula (I), a carboxylic acid generator and a resist composition: wherein L1 and L2 each represent a single bond or a hydrocarbon group which may have a substituent, —CH2— included in the hydrocarbon group may be replaced by —O—, —S—, —SO2— or —CO—, Ar1 represents an aromatic hydrocarbon group or a heterocyclic aromatic hydrocarbon group, R3 represents *—O—R10, *—O—CO—R10, etc., R10 represents an acid-labile group, R4 represents a halogen atom, a haloalkyl group or a hydrocarbon group, the hydrocarbon group may have a substituent, —CH2— included in the haloalkyl group and the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—, m4 represents an integer of 0 to 8, and Z+ represents an organic cation.

Abstract: In a first aspect, a polymer composition includes 0.5 to 99 mol % of a hydroxystyrene repeat unit, 0.5 to 99 mol % of a sulfonated photoacid generator repeat unit and 0.5 to 99 mol % of an acid labile repeat unit. In a second aspect, a photoresist composition includes the polymer composition of the first aspect.

Abstract: A photosensitive resin composition comprising (A) a polyimide precursor having a polymerizable unsaturated bond; (B) a polymerizable monomer; (C) a photopolymerization initiator; and (D) an ultraviolet absorber.

Abstract: A method for reducing resist consumption (RRC) is provided. The method includes treating a surface of a substrate using a RRC composition and forming a photoresist layer comprising a metal-containing material on the RRC composition treated surface. The RRC composition includes a solvent and an acid or a base. The solvent has a dispersion parameter between 10 and 25. The acid has an acid dissociation constant between ?20 and 6.8. The base having an acid dissociation constant between 7.2 and 45.

Abstract: Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C?CSiR?3)3, R?R?ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R?R? (R?O) CSnL3 or R?R? (N?C) CSnZ3.

Abstract: A carboxylate represented by formula (I), a resin comprising a structural unit derived from the carboxylate represented by formula (I), a resit composition comprising the carboxylate represented by formula (I) or a resin comprising a structural unit derived from the carboxylate represented by formula (I).

Abstract: A method of forming a pattern, the method comprising: providing a photoresist underlayer over a substrate; forming a photoresist layer over the photoresist underlayer; patterning the photoresist layer; and transferring a pattern from the patterned photoresist layer to the photoresist underlayer; wherein the photoresist underlayer is formed from a composition comprising a solvent and a compound represented by Formula 1 or a polymer having a repeating unit represented by Formula 2 wherein in Formulae 1 and 2: Ar1 and Ar2 independently represent an aromatic group; and Y1, Y2, X1, X2, X3, T1, T2, Z1, and Z2 are as defined.

Abstract: A carboxylate represented by formula (I), a resin comprising a structural unit derived from the carboxylate represented by formula (I), a resist composition comprising the carboxylate represented by formula (I) or a resin comprising a structural unit derived from the carboxylate represented by formula (I).

Abstract: Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, and a resist composition comprising the same: wherein R1 and R2 each represent a hydroxy group, *—O—R10, *—O-L10-CO—O—R10; L10 represents an alkanediyl group; R10 represents an acid-labile group; R4, R5, R7 and R8 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A1 and A2 each represent a hydrocarbon group, the hydrocarbon group may have a substituent, and —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4, 1?m1+m7?5, 0?m2+m8?5; and Al? represents an organic anion.

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.

Abstract: A photosensitive resin composition contains: a polymer (A) having a terminal group represented by Formula (a1) and a repeating structural unit represented by Formula (a2); a crosslinking agent (B); and a photocation generator (C). Y represents a reactive group that reacts with the crosslinking agent (B) by action of a cation generated from the photocation generator (C) upon light irradiation; each X independently represents an oxygen atom, a sulfur atom, an ester bond, an amide bond, or —SO2—; R1 represents a divalent hydrocarbon group or a divalent group in which a functional group other than the reactive group and heterocycles is introduced into the divalent hydrocarbon group; and R2 represents a divalent hydrocarbon group, a divalent group in which a functional group other than the reactive group and heterocycles is introduced into the divalent hydrocarbon group, or a heterocycle-containing group that does not have the reactive group.

Abstract: A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

Abstract: There is described herein a method for fabricating a tunnel junction. The method comprises coating a substrate with an inorganic resist layer and forming support pillars in the resist layer; fabricating a mask on the resist layer from a first inorganic material, the mask having at least one opening; removing the resist layer from beneath the mask, leaving behind the support pillars supporting the mask above the substrate; performing shadow evaporation on the substrate through the at least one opening of the mask to form the tunnel junction on the substrate; and removing the mask and the support pillars from the substrate.

Abstract: Embodiments of the present application disclose a method of processing a photoresist layer, a method of manufacturing a display panel, and a display panel. By performing two exposure processes and one development process on a negative photoresist layer, an undercut structure can be obtained, effectively simplifying a process of manufacturing the undercut structure, thereby improving the production efficiency.

Abstract: Provided is a resin that exhibits high resist performance because a poorly soluble component with respect to a resist solvent is reduced, and a production method for the resin. Disclosed is a photoresist resin containing an acrylic resin, in which when the photoresist resin is dissolved in propylene glycol monomethyl ether acetate in such a way that a resin solid content concentration is 5 wt %, a polystyrene equivalent turbidity measured using a method described in “Drinking Water Testing Methods” of Japan Water Works Association of 2003, Ministry of Health, Labor and Welfare Ordinance No. 261 of Japan is 30 or less.

Abstract: To provide a novel polymer capable of reducing sublimate during film formation and a composition comprising the same. The polymer (A) according to the present invention comprises at least one structural unit selected from the group consisting of Unit (a), Unit (b), Unit (c) and Unit (d) having certain structures, wherein, na, nb, nc and nd, which are the numbers of repetition respectively of Units (a), (b), (c) and (d), satisfy the following formulae: na+nb>0, nc?0 and nd?0.

Abstract: The present application provides a method of processing a substrate. The method of processing the substrate includes steps of forming a photosensitive layer on the substrate; performing a first exposure process to expose the photosensitive layer to actinic radiation through a first mask; performing a first developing process to remove portions of the photosensitive layer exposed to the actinic radiation and form an intermediate pattern; performing a second exposure process to expose the intermediate pattern to the actinic radiation through a second mask; performing a second developing process to remove portions of the intermediate pattern shielded from the actinic radiation and form a target pattern; and performing an etching process to remove portions of the substrate exposed by the target pattern.

Abstract: A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure; X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).

Abstract: Developer compositions are described based on blends of solvents, in which the developers are particularly effective for EUV patterning using organometallic based patterning compositions. Methods for use of these developing compositions are described. The blends of solvents can be selected based on Hansen solubility parameters. Generally, one solvent has low polarity as express by the sum of ?P+?H, and a second solvent component of the developer has a higher value of ?P+?H. Corresponding solvent compositions are described.

Abstract: A photoresist underlayer composition, comprising: a first polymer comprising a crosslinkable group; a second polymer comprising: a first repeating unit comprising a repeating unit comprising a photoacid generator, and a second repeating unit comprising a hydroxy-substituted C1-30 alkyl group, a hydroxy-substituted C3-30 cycloalkyl group, or a hydroxy-substituted C6-30 aryl group; an acid catalyst; and a solvent.

Abstract: A cup includes a flow passage forming member forming a first exhaust passage, a scattered substance collection passage configured to collect a scattered substance from a substrate, and a second exhaust passage in sequence as going upwards; a joint exhaust passage connected to each of the first exhaust passage, the scattered substance collection passage, and the second exhaust passage; a first annular member included in the flow passage forming member, the scattered substance collection passage and the first exhaust passage being formed above and below the first annular member, respectively; and a communication hole provided in the flow passage forming member to allow the scattered substance collection passage and the joint exhaust passage to communicate with each other such that a pressure loss of the communication hole is large as compared to a pressure loss in a gap formed between the first annular member and the substrate.

Abstract: A method is described for stabilizing organometallic coating interfaces through the use of multilayer structures that incorporate an underlayer coating. The underlayer is composed of an organic polymer that has crosslinking and adhesion-promoting functional groups. The underlayer composition may include photoacid generators. Multilayer structures for patterning are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo hydroxo compositions, which are placed over a polymer underlayer.

Abstract: Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

Abstract: A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

Abstract: A method of removing a photoresist, a laminate, a method of forming a metallic pattern, a polyimide resin, and a stripper are provided. The method of removing the photoresist includes forming a release layer on a substrate, the release layer having a first surface and a second surface opposite to each other, wherein the first surface of the release layer is in contact with the substrate; forming a photoresist layer on the second surface of the release layer; and removing the release layer and the photoresist layer. The release layer is formed by a polyimide resin. The polyimide resin is obtained by performing a polymerization of tetracarboxylic dianhydrides, diamines, and phenolamines. The diamines include hydroxyfluorinated diamines, benzoic acid diamines, and aminotetramethyldisiloxanes.

Abstract: An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.

Abstract: The present disclosure provides an insulating layer for a multilayer printed circuit board, a multilayer printed circuit board including the same, and a method for fabricating the same. The insulating layer of the present disclosure includes a polymer resin layer containing a melamine derivative, and thus may have excellent adhesion to a patterned metal layer.

Abstract: The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a solubility in a developer, which changes by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation; and an acid diffusion control agent, in which a molecular weight of the acid diffusion control agent is 420 or more, and a distance Ra between a Hansen solubility parameter of the acid diffusion control agent and a Hansen solubility parameter of the air satisfies 15?Ra?45.

Abstract: A method for manufacturing a semiconductor device includes steps of forming a first photoresist film on a semiconductor substrate, and forming a second photoresist film having a higher acidity than the first photoresist film on the first photoresist film, forming an opening for exposing a surface of the semiconductor substrate by patterning the first photoresist film and the second photoresist film, applying a shrink material to an upper surface of the second photoresist film and an inside of the opening, and reacting the shrink material and the second photoresist film in the inside of the opening by heat-treating the first photoresist film, the second photoresist film and the shrink material, and removing an unreacted shrink material that do not react with the second photoresist film from the upper surface of the second photoresist film and the inside of the opening.

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.

Abstract: The present disclosure relates to a method for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material. A laser beam is directed at a tunable mask. At least one emergent beam is collected from a plurality of emergent beams emerging from the tunable mask. The at least one emergent beam is collimated to create a collimated beam. Each emergent beam from the tunable mask has a plurality of beam lets of varying or identical intensity, and each beam let emerges from a unique subsection or region of the tunable mask. The collimated beam is focused into a laser beam which is projected as an image plane onto or within the photopolymer resist material, such that the same optical path length is created between the tunable mask and the focused image plane for all optical frequencies of the focused laser beam.

Abstract: A negative photosensitive resin composition including: an alkali-soluble resin containing at least one structure selected from a polyimide structure, a polyamide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof, a polymer compound having a structural unit formed by cyclopolymerization, a compound that generates an acid by light, and a heat crosslinking agent.

Abstract: A positive photosensitive resin composition including: an alkali-soluble resin containing at least one structure selected from a polyimide structure, a polyamide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof, a polymer compound having a structural unit formed by cyclopolymerization, and a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution.

Abstract: Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

Abstract: Disclosed are resist compositions and semiconductor device fabrication methods wing the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.

Abstract: To provide a negative photosensitive resin composition which exhibits satisfactory resolution even when shifts occur in focus depth, and which has satisfactory adhesion to a mold resin and exhibits a low dielectric constant; a method for producing a polyimide using the photosensitive resin composition; a method for producing a cured relief pattern; and a semiconductor device including the cured relief pattern. Disclosed is a negative photosensitive resin composition including a polyimide precursor having a structure represented by general formula (A1), (B) a photopolymerization initiator, and (C) a solvent.

Abstract: A resist composition includes a novolak resin in which a hydroxy group is substituted with a group represented by formula (3), an acid generator, a quencher, and a solvent: wherein, in formula (3), Ra10 represents a hydrocarbon group having 1 to 20 carbon atoms (e.g., a chain hydrocarbon group such as an alkyl group, an alkenyl group and an alkynyl group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, groups formed by combining these groups, etc.) and * represents a bond.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern thus formed has excellent LER and collapse suppressing ability. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a compound that generates an acid upon irradiation with actinic rays or radiation, and a resin whose polarity increases by the action of an acid, in which the resin includes a repeating unit represented by General Formula (B-1), and a content of the repeating unit represented by General Formula (B-1) is 5% to 70% by mass with respect to all the repeating units in the resin.