Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer.

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR?)5?x(OH)2+x(?3-O) with 0?x<2; R=branched or cycloalkyl with 1 to 31 carbon atoms; R??H or alkyl with 1 to 20 carbon atoms. Three carboxylato ligands are bridging, and two OH ligands are bridging. The remaining two carboxylato ligands are in non-bridging configurations, and the non-bridging carboxylato ligands are exchangeable in solution. Solutions of these clusters are suitable for forming radiation sensitive coatings that can be used to pattern nanometer scale structures. The radiation sensitive coatings are particularly suitable for EUV patterning.

Abstract: A method for forming a surface-relief grating with a desired spatial variation of duty cycle in a layer of photoresist includes: providing a first mask bearing a high-resolution grating of linear features, arranging the first mask at a first distance from a substrate, providing a second mask bearing a variable-transmission grating of opaque and transparent linear features that has a designed spatial variation of duty cycle, arranging the second mask at a distance before the first mask such that the linear features of the variable-transmission grating are orthogonal to the linear features of the high-resolution grating, illuminating the second mask while varying the first distance according to displacement Talbot lithography and also displacing the second mask at an angle to its linear features such that there is substantially no component of modulation with the period of the variable-transmission grating in the energy density distribution that exposes the photoresist.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The photoresist underlayer includes a polymer, including a main polymer chain having pendant target groups, and pendant organic groups or photoacid generator groups. The main polymer chain is a polystyrene, a polyhydroxystyrene, a polyacrylate, a polymethylacrylate, a polymethylmethacrylate, a polyacrylic acid, a polyvinyl ester, a polymaleic ester, a poly(methacrylonitrile), or a poly(methacrylamide). Pendant target groups are selected from the group consisting of a substituted or unsubstituted: C2-C30 diol group, C1-C30 aldehyde group, and C3-C30 ketone group. Pendant organic groups are C3-C30 aliphatic or aromatic groups having at least one photosensitive functional group, and pendant photoacid generator groups are C3-C50 substituted aliphatic or aromatic groups. A photoresist layer is formed over the photoresist underlayer.

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Abstract: In a method of manufacturing a semiconductor device, a hydrophobic solvent as a gas is directed to flow over a bevel region of a wafer. A layer of the hydrophobic solvent is deposited on an upper bevel of the bevel region on top surface of the wafer and on a lower bevel of the bevel region on bottom surface of the wafer. A metal-containing photo resist layer is disposed on an internal region of the top surface of the wafer enclosed by the bevel region. During a subsequent processing operation, a photo resist material of the metal-containing photo resist layer is blocked off inside the top surface of the wafer by the layer of the hydrophobic solvent.

Abstract: A method for forming a semiconductor device includes receiving a substrate having a first opening and a second opening formed thereon, wherein the first opening has a first width, and the second opening has a second width less than the first width; forming a protecting layer to cover the first opening and expose the second opening; performing a wet etching to widen the second opening with an etchant, wherein the second opening has a third width after the performing of the wet etching, and the third width of the second opening is substantially equal to the first width of the first opening; and performing a photolithography to transfer the first opening and the second opening to a target layer.

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Abstract: A polymer comprising recurring units having a multiple bond-containing acid labile group, recurring units having a phenolic hydroxyl group, and recurring units adapted to generate an acid upon exposure is used to formulate a resist composition, which exhibits a high sensitivity, low LWR and improved CDU when processed by lithography using EUV of wavelength 13.5 nm.

Abstract: The present invention is a resist material containing: (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.

Abstract: Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

Abstract: Two-stage bake photoresists with releasable quenchers for fabricating back end of line (BEOL) interconnects are described. In an example, a photolyzable composition includes an acid-deprotectable photoresist material having substantial transparency at a wavelength, a photo-acid-generating (PAG) component having substantial transparency at the wavelength, and a base-generating component having substantial absorptivity at the wavelength.

Abstract: A lower resist (2) is applied on a semiconductor substrate (1). An upper resist (3) is applied on the lower resist (2). A first opening (4) is formed in the upper resist (3) by exposure and development and the lower resist (2) is dissolved with a developer upon the development to form a second opening (5) having a width wider than that of the first opening (4) below the first opening (4) so that a resist pattern (6) in a shape of an eave having an undercut is formed. Baking is performed to thermally shrink the upper resist (3) to bent an eave portion (7) of the upper resist (3) upward. After the baking, a metal film (8) is formed on the resist pattern (6) and on the semiconductor substrate (1) exposed at the second opening (5). The resist pattern (6) and the metal film (8) is removed on the resist pattern (6) and the metal film (8) is left on the semiconductor substrate (1) as an electrode (9).

Abstract: A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ?O, —S—, —P—, —PO2, —C(?O)SH, —C(?O)OH, —C(?O)O—, —O—, —N—, —C(?O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

Abstract: A resin composition that has excellent flux activity, flexibility and storage stability and that is suitable for a pre-applied underfill material is provided. The resin composition contains a compound (A) having a phenolic hydroxy group, a metal ion trapping agent (B) and a radical polymerizable compound (C).

Abstract: A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.

Abstract: Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.

Abstract: A positive photosensitive resin composition comprises a resin, a diazonaphthoquinone compound and a solvent. The resin comprises a combination of any one or more of polyamic acid, polyamic ester and polyimide of a segment shown in the following structure; . The resin film formed by the positive photosensitive resin composition is applied to a semiconductor passivation film, a semiconductor element protective film, an insulating layer of an organic electroluminescent element, a flat film of a thin film transistor (TFT) substrate, a wiring protective insulating film of a circuit board and a flat film for displays and solid camera elements. The photosensitive resin film formed by the positive photosensitive resin composition has the characteristics of low shrinking rate and excellent heat resistance and resolving power, and has good application effect in electronic elements.

Abstract: Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a microcavity structure layer and a light emitting structure layer that are stacked, a reflective electrode being disposed in the microcavity structure layer, a groove being disposed on a surface of the microcavity structure layer, the light emitting structure layer including a first electrode disposed in the groove, and the first electrode being connected to the reflective electrode.

Abstract: A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.

Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a sulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and improved CDU, and forms a pattern of good profile after exposure and development.

Abstract: The present invention discloses a photosensitive composition, comprising polyvinyl acetate (0% saponified) having a styryl type nitrogen-containing heterocyclic groups such as a styrylpyridinium or/and styrylquinolinium that possesses high UV light energy sensitivity with a small photosensitive group content, high solid content, high water resistance, and very sharp imaging characteristics and produced therefrom photosensitive compositions such as a photo-resist, photolithographic plates, screen printing stencil emulsion and film, and abrasion resistant photosensitive emulsion and film, and other photosensitive compositions being used for commercial and industrial applications.

Abstract: A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.

Abstract: A salt represented by formula (I), a generator and a resist composition: wherein R1 and R2 each independently represent an iodine atom, a fluorine atom or an alkyl fluoride group having 1 to 6 carbon atoms; R4, R5, R7 and R8 each independently represent a halogen atom, a hydroxy group, a haloalkyl group having 1 to 12 carbon atoms or an alkyl group having 1 to 12 carbon atoms, —CH2— included in the haloalkyl group and the alkyl group may be replaced by —O—, —CO—, —S— or —SO2—; X1 and X2 each independently represent an oxygen atom or a sulfur atom; m1 represents 1 to 5, m2 and m8 represent 0 to 5, and m4, m5 and m7 represent an integer of 0 to 4, in which 1?m1+m7?5, 0?m2+m8?5; and AI? represents an organic anion.

Abstract: A resist composition comprising an ammonium salt and fluorine-containing polymer comprising repeat units AU having an ammonium salt structure of an iodized or brominated phenol compound and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.

Abstract: A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, which contains a resin component (A1) exhibiting changed solubility in a developing solution under action of acid, the resin component (A1) has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents a cyclic acid dissociable group, q represents an integer in a range of 0 to 3, and n represents an integer of 1 or more, provided that n?q×2+4 is satisfied

Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group having 1 to 6 carbon atoms which may have a halogen, hydrogen or halogen atom, R2 and R3 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, R4 represents a fluorine atom, an alkyl fluoride group having 1 to 6 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—, R5 represents a hydrogen atom, an alkylcarbonyl group having 2 to 6 carbon atoms or an acid-labile group, m2 represents an integer of 1 to 4, m4 represents an integer of 0 to 3, and m5 represents 1 or 2, in which 2?m2+m4+m5?5.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, and a resist composition including the same: wherein R1, R2 and R3 each represent a hydroxy group, *—O—R10, *—O—CO—O—R10, etc.; L10 represents an alkanediyl group; R10 represents an acid-labile group; R4, R5, R6, R7, R8 and R9 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A1, A2 and A3 each represent a hydrocarbon group which may have a substituent, and —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—; m1 represents an integer of 1 to 5, m2, m3, m8 and m9 represent an integer of 0 to 5, m4 to m7 represent an integer of 0 to 4, 1?m1+m7?5, 0?m2+m8?5, 0?m3+m9?5; and AI? represents an organic anion.

Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom; L1 represents a single bond or —CO—O*; R3 represents an alkyl group, and —CH2— included in the group may be replaced by —O— or —CO; R4 represents a fluorine atom, an alkyl fluoride group or an alkyl group, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—; R5 represents a hydrogen atom, an alkylcarbonyl group or an acid-labile group; m2 and m3 represent an integer of 1 to 3, m4 represents an integer of 0 to 2, and m5 represents 1 or 2, in which 3?m2+m3+m4+m5?5.

Abstract: The present invention relates to a homopolymer, copolymer, block copolymer, and statistical copolymer comprising plural polyol monomeric units. The polyol monomeric units being acrylated and acylated or acetalized. The acrylated and acylated or acetalized polyol monomeric units have an average degree of acrylation which is 1 or more, but less than the number of the hydroxyl groups of the polyol and have an average degree of acylation or acetalization which is 1 or more, but less than the number of the hydroxyl groups of the polyol. The present invention also relates to a method of making the homopolymers, copolymers, block copolymers, and statistical copolymers, and using them in various applications, such as asphalt rubber modifiers, adhesives, or an additive in a fracking fluid for oil fracking.

Abstract: An optical filter, a sensor device including the optical filter, and a method of fabricating the optical filter are provided. The optical filter includes one or more dielectric layers and one or more metal layers stacked in alternation. The metal layers are intrinsically protected by the dielectric layers. In particular, the metal layers have tapered edges that are protectively covered by one or more of the dielectric layers.

Abstract: The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

Abstract: A resist composition containing a resin component (A1) having a constitutional unit derived from a compound represented by General Formula (a01-1).

Abstract: A method and apparatus for forming a resist pattern may be provided. In the method for forming a resist pattern, a resist layer may be formed on a base layer, an electric field may be applied to the resist layer in a thickness direction of the resist layer, and a portion of the resist layer may be exposed with extreme ultraviolet (EUV) light while applying the electric field. A lithography apparatus for performing the method of forming a resist pattern may include at least an exposure part and an electric field forming part. The exposure part may be configured to expose a portion of the resist layer with extreme ultraviolet (EUV) light. The electric field forming part may be configured to apply an electric field to the resist layer.

Abstract: Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Abstract: A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.

Abstract: A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2).

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

Abstract: In this work is presented a method for fabrication of high-aspect ratio structures through spalling effect. The spalling is achieved through lithography, etching and sputtering processes, thus providing the flexibility to position the spalled structures according to the application requirements. This method has been successfully demonstrated for metal-oxides and metals. The width of the fabricated structures is dependent on the thickness of the film deposited by sputtering, where structures as small as 20 nm in width have been obtained.

Abstract: A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R12 and R13 each independently represents a chain hydrocarbon group, or R12 and R13 are mutually bonded to form a cyclic group

Abstract: A black photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin, (B) carbon black, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved reliability with respect to adhesion and crack resistance, resolution and flexibility while maintaining satisfactory light shielding properties.

Abstract: The present specification relates to a binder resin, a photosensitive resin composition, an insulating film and a semiconductor device.

Abstract: Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator: wherein, in formula (I), R1 represents a halogen atom or an alkyl fluoride group having 1 to 6 carbon atoms, m1 represents an integer of 1 to 5, and when m1 is 2 or more, a plurality of R1 may be the same or different from each other.

Abstract: Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator, the resin having an acid-labile group including at least one selected from the group consisting of a structural unit represented by formula (a1-1) and a structural unit represented by formula (a1-2):

Abstract: A patterning method includes providing a photosensitive composition on a material layer. The photosensitive composition includes one part by weight of a photo sensitive compound, 1.5 to 8 parts by weight of a resin, and 10 to 40 parts by weight of a diluent. The photosensitive compound has a chemical structure of The patterning method further includes removing the diluent in the photosensitive composition to form a photoresist layer, exposing the photoresist layer, and removing an exposed part of the photoresist layer to expose a part of the material layer.

Abstract: This disclosure relates to functionalized polyhedral oligomeric silsesquioxanes (POSS) and polymeric membranes containing the functionalized POSS. This disclosure also relates to methods of using the membranes for natural gas liquid recovery, such as removal and recovery of C3+ hydrocarbons from natural gas.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.