Abstract: The inventive concept provides a method for processing data generated at a substrate treating. The method includes dividing the data according to each process of the substrate treating; and converting the divided data to a same size. In an embodiment, converting the divided data t a same size comprises converting the divided data to the same size using an ID convolution.

Abstract: An extended optical pulse stretcher is provided that combines confocal pulse stretchers in combination to produce, for example, 4 reflections, 4 reflections, 12 reflections, and 12 reflections per optical circuit configuration. The inclusion of the combination of different mirror separations and delay path lengths can result in very long pulse stretching, long optical delays, and minimal efficiency losses. Also, in the extended optical pulse stretcher, at least a beam splitter can be positioned relative to the center of curvature of the mirrors to “flatten” each of the circuits to enable the beam to propagate in the same plane (e.g., parallel to the floor). Also, the curvatures and sizes of the individual mirrors can be designed to position the beam splitter closer to one of the banks of mirrors to allow the optical pulse stretchers to properly fit in an allocated location in a laser system.

Abstract: The collapsed pattern recovering method is a method for recovering a collapsed pattern which is a pattern formed on a front surface of a substrate, and the method includes a reactive gas supplying step which supplies to the front surface of the substrate a reactive gas that can react with a product existing on the front surface. The reactive gas supplying step includes a hydrogen fluoride vapor supplying step which supplies vapor that contains hydrogen fluoride to the front surface of the substrate. The collapsed pattern recovering method further includes a substrate heating step which heats the substrate in parallel with the hydrogen fluoride vapor supplying step.

Abstract: Methods of forming optical devices using nanoimprint lithography and etch processes are provided. In one embodiment, a method is provided that includes depositing a first resist layer on a substrate, the substrate having a hardmask disposed thereon, imprinting a first resist portion of the first resist layer with a first single-height stamp, etching the first resist portion of the first resist layer, etching a first hardmask portion of the hardmask corresponding to the first resist portion of the first resist layer, removing the first resist layer and depositing a second resist layer, imprinting a second resist portion of the second resist layer with a second single-height stamp, etching the second resist portion of the second resist layer, and etching a second hardmask portion of the hardmask corresponding to the second resist portion of the second resist layer.

Abstract: An exhaust stream monitoring system for a photolithography track of an IC fabrication process comprises a reaction chamber including a housing, an inflow port and an outflow port, the housing containing a thermal plate for heating a semiconductor process wafer for a predetermined amount of time. An influent pipe coupled to the inflow port supplies a photoresist adhesion promoter in a gaseous form to the reaction chamber. An effluent pipe coupled to the outflow port is operative to remove byproducts from the reaction chamber as an exhaust stream. At least one gas sensor manifold assembly is coupled to the effluent pipe for monitoring the exhaust stream from the reaction chamber to detect presence of one or more byproducts of a reaction between the photoresist adhesion promoter and the semiconductor process wafer.

Abstract: A resist composition comprising an ammonium salt and fluorine-containing polymer offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone. The ammonium salt and fluorine-containing polymer comprises repeat units AU having an ammonium salt structure containing a carboxylic acid anion, sulfonamide anion, phenoxide anion or enolate anion of ?-diketone, the anion containing fluorine, but not iodine and bromine, and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group.

Abstract: A photosensitive composition including metal nanoparticles capped with an organic ligand, wherein the metal particles includes a metal that absorbs light in the extreme ultraviolet spectrum. A method including synthesizing metal particles including a diameter of 5 nanometers or less, wherein the metal particles includes a metal that absorbs light in the extreme ultraviolet spectrum; and capping the metal particles with an organic ligand. A method including depositing a photosensitive composition on a semiconductor substrate, wherein the photosensitive composition includes metal nanoparticles capped with an organic ligand and the nanoparticles include a metal that absorbs light in the extreme ultraviolet spectrum; exposing the photosensitive composition to light in an ultraviolet spectrum through a mask including a pattern; and transferring the mask pattern to the photosensitive composition.

Abstract: Provided is a composition for optical materials that gives optical materials which can have at least one improved property selected from among satisfactory mold releasability after polymerization and curing, unsusceptibility to separation from the mold during polymerization and curing, transparency, and low-level striae. The present invention further provides a compound represented by formula (1). The composition for optical materials comprises the compound represented by formula (1) and a compound represented by formula (2). (In formula (1), X1 and X2 represent O or S, provided that both X1 and X2 are O or that X1 is O and X2 is S.

Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

Abstract: An apparatus for receiving input radiation and broadening a frequency range of the input radiation to provide broadband output radiation. The apparatus includes a chamber, a fiber, a gas generating apparatus, and a radical generating apparatus. The fiber includes a hollow core configured to guide radiation propagating through the fiber, the hollow core in fluid communication with the chamber. The gas generating apparatus is configured to provide a gas within the chamber. The radical generating apparatus is configured to provide free radicals within the chamber to reduce contaminants in the gas. The apparatus may be included in a radiation source.

Abstract: Described are methods and apparatus for the inspection of cured layers of an object during the fabrication of the object using a 3D printing system. A just-printed layer may be inspected by pressing the layer against a pressure-sensitive surface in order to collect information about the layer. For example, a tank may contain a photo-curing liquid polymer, and at its bottom are pressure sensitive elements (e.g., in a backing member or mask). An extraction plate to which the object is affixed may be adjusted so as to position a surface of the object adjacent to the pressure sensitive elements, which report a pressure distribution (e.g., by virtue of a force exerted by a localized region of the object on a localized region of the pressure sensitive elements).

Abstract: The disclosure relates generally to a method of changing an optical state of an electrochromic film. The electrochromic film may have a plurality of optical states. The method may include selecting a desired state of the plurality of optical states; injecting electric charges into the electrochromic film; monitoring an amount of the electric charges injected into the electrochromic film; and stopping injecting the electric charges when the electric charges reaches a pre-set amount corresponding to the desired state.

Abstract: A method includes: producing a light beam made up of pulses having a wavelength in the deep ultraviolet range, each pulse having a first temporal coherence defined by a first temporal coherence length and each pulse being defined by a pulse duration; for one or more pulses, modulating the optical phase over the pulse duration of the pulse to produce a modified pulse having a second temporal coherence defined by a second temporal coherence length that is less than the first temporal coherence length of the pulse; forming a light beam of pulses at least from the modified pulses; and directing the formed light beam of pulses toward a substrate within a lithography exposure apparatus.

Abstract: A resist composition comprising a base polymer and a quencher in the form of a salt of a cyclic ammonium cation with a carboxylate, sulfonamide, halogenated phenoxide or halide anion offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: The present disclosure relates to a liquid crystal display (LCD) system. The system in one example has a light source for generating unpolarized light, and an LCD screen arranged in a path of transmittance of the unpolarized light. First and second wire grid polarizers are arranged adjacent to the LCD screen and each have a plurality of nano-scale wires, with the first and second wire grid polarizers have differing polarizations. A pitch of each of the nano-scale wires is no larger than one-third a wavelength of the unpolarized light from the light source. The wire grid polarizers create, in connection with operation of the LCD screen, a 2D light mask suitable for initiating the polymerization of an optically curable material.

Abstract: A method of manufacturing a thin film is provided. The method includes providing a plurality of crystalline cathodic electrochromic particles comprising an alkali metal oxide material, size-reducing the crystalline cathodic electrochromic particles by grinding to produce crystalline cathodic electrochromic nanostructures, providing a substrate, and coating the crystalline cathodic electrochromic nanostructures onto the substrate to produce a thin film, wherein the thin film is an electrochromic thin film.

Abstract: This disclosure relates to a production method of a display substrate, a display substrate, and a display apparatus. This production method comprises steps of: forming a thin film for a pixel defining layer used to define a light-emitting area of each sub-pixel on a base substrate; forming nanoparticles in a preset area of the thin film for the pixel defining layer, wherein the preset area is an area corresponding to a place between adjacent sub-pixels; and performing patterning treatment on the thin film for the pixel defining layer formed with the nanoparticles, with a material in the preset area being retained, to form a pattern of the pixel defining layer.

Abstract: A photomask including a photomask body having a surface on which a mask pattern is formed and to be scanned and subjected to pattern transfer to a resist through a lens assembly including a connecting portion and a non-connecting portion. The mask pattern has a first region subjected to the pattern transfer at the connecting portion of the lens assembly and a second region subjected to the pattern transfer at the non-connecting portion. The mask pattern has, in at least one of the first and second regions, a corrected line width which is adjusted by calculation such that the resist is to have a target line width as designed. The corrected line width has a stepwise change in at least one of a scanning direction and a direction orthogonal to the scanning direction. The stepwise change is made by including a correction component based on a random number.

Abstract: A microscope directs light through an excitation objective to generate a lattice light sheet (LLS) within a sample. A detection objective collects signal light from the sample in response to the LLS and images the collected light onto a detector. Second and third light beams are imaged onto focal planes of the excitation objective and detection objective, respectively. One or more wavefront detectors determine wavefronts of light emitted from the sample and through the excitation objective in response to the imaged second light beam and emitted from the sample through the detection objective in response to the imaged third light beam. A wavefront of the first light beam is modified to reduce a sample-induced aberration of the LLS within the sample, and a wavefront of the signal light emitted from the sample is modified to reduce a sample-induced aberration of the signal light at the detector.

Abstract: A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.

Abstract: In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer resin to more closely match a surface energy of an underlying material in order to help fill gaps between structures. The surface energy of the polymer resin may be modified by either using a surface energy modifying group or else by using an inorganic structure.

Abstract: In accordance with some aspects of the present disclosure, a maskless interferometric lithography system for fabricating a three-dimensional (3D) photonic crystal using a multiple two-beam-exposures is disclosed. The system can comprise an illumination system comprising an optical arrangement operable to receive radiation from a radiation source and provide three or more tilted two-beam interference pattern exposures to be combined into a three-dimensional pattern; and a substrate operable to be supported by a substrate table, wherein the substrate comprises a photoresist formed on a top surface of the substrate and operable to receive the three-dimensional pattern and wherein means are provided to adjust the position of the substrate in all six mechanical degrees of freedom.

Abstract: A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films.

Abstract: Disclosed are systems and methods for achieving sub-diffraction limit resolutions in lithography. In one embodiment, a lithography system is disclosed. The system includes, a first light source, configured to generate excitation laser beams; a second light source, configured to generate depletion laser beams; one or more scattering mediums configured to receive one or more of the excitation laser beams and depletion laser beams and scramble the laser beams; one or more wave-front shaping modules, configured to receive the scrambled laser beams, descramble the laser beams and generate one or more focused laser beams; a numerical aperture device configured to receive the one or more focused laser beams and generate a focused point on a substrate.

Abstract: A method of optimizing a lithographic process for semiconductor fabrication includes determining that a semiconductor wafer experienced a photoresist exposure delay. At least one operating parameter of a post exposure baking process is adjusted based on the semiconductor wafer having experienced the photoresist exposure delay. The post exposure baking process is performed on the semiconductor wafer utilizing the adjusted at least one operating parameter.

Abstract: An EUV lithography apparatus may include a light source, an EUV mask and a carbon-based optical filter. The light source may generate an EUV light. The EUV mask may be configured to apply the EUV light to a photoresist film on a substrate. The carbon-based optical filter may filter a light having an OoB wavelength in the EUV light. Thus, the EUV light may not include the light having the OoB wavelength to decrease an error of a photoresist pattern formed using the EUV light.

Abstract: The disclosure features systems and methods that include: exposing a biological sample to an ion beam that is incident on the sample at a first angle to a plane of the sample by translating a position of the ion beam on the sample in a first direction relative to a projection of a direction of incidence of the ion beam on the sample; after each translation of the ion beam in the first direction, adjusting a focal length of an ion source that generates the ion beam; and measuring and analyzing secondary ions generated from the sample by the ion beam after adjustment of the focal length to determine mass spectral information for the sample, where the sample is labeled with one or more mass tags and the mass spectral information includes populations of the mass tags at locations of the sample.

Abstract: A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region which forms part of an electrical connection to the second load terminal.

Abstract: Systems for the production of graphene oxide sheets are provided. The systems include electro-deposition and spray deposition techniques. The graphene oxide sheets may be used as pre-cursors for the formation of porous graphene network (PGN) anodes and lithiated porous graphene (Li-PGN) cathodes. The method of making PGN electrodes includes thermally reducing a pre-cursor sheet of graphene oxide to provide a PGN anode and exposing the sheet to lithium or a lithium-containing compound to produce a Li-PGN cathode. The Li-PGN cathode and PGN anode may be combined with an electrolyte to provide an “all-carbon” battery that is useful in various applications, such as automotive applications.

Abstract: A vapor deposition mask includes a metal mask and a resin mask having an opening. An inner wall surface for composing the opening has an inflection point in a thicknesswise cross section of the resin mask. When an intersection of a first surface, not facing the metal mask, of the resin mask and the inner wall surface is set to be a first intersection, an intersection of a second surface, facing the metal mask, of the resin mask and the inner wall surface is set to be a second intersection, and there is set a first inflection point first positioned from the first intersection toward the second intersection, an angle formed by a line connecting the first intersection and the first inflection point and the first surface is larger than an angle formed by a line connecting the first inflection point and the second intersection and the second surface.

Abstract: In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.

Abstract: A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.

Abstract: Imaging of complex, non-stationary three dimensional (3D) flow velocities is achieved by encoding depth into color. A flow volume 22 is illuminated with a continuum 40 of light planes 42 whereby each depth corresponds to a respective light plane 14 having a specific wavelength of light. A diffractive component 46 in the camera 24 optics, which records the trajectories of illuminated particles 20 within the flow volume 22, ensures that all light planes 42 are in focus simultaneously. The setup permits a user to track 3D trajectories of particles 20 within the flow volume 22 by combining two dimensional (2D) spatial and one dimensional (1D) color information. For reconstruction, an image formation model for recovering stationary 3D particle positions is provided. 3D velocity estimation is achieved with a variant of a 3D optical flow approach that accounts for both physical constraints as well as the color (rainbow) image formation model.

Abstract: The present disclosure provides a method for forming patterns in a semiconductor device. The method includes providing a substrate and a patterning-target layer over the substrate; patterning the patterning-target layer to form a main pattern; forming a middle layer over the patterning-target layer and a hard mask layer over the middle layer; patterning the hard mask layer to form a first cut pattern; patterning the hard mask layer to form a second cut pattern, a combined cut pattern being formed in the hard mask layer as a union of the first cut pattern and the second cut pattern; transferring the combined cut pattern to the middle layer; etching the patterning-target layer using the middle layer as an etching mask to form a final pattern in the patterning-target layer. In some embodiments, the final pattern includes the main pattern subtracting an intersection portion between main pattern and the combined cut pattern.

Abstract: A method and apparatus for making a three-dimensional object by solidifying a photohardenable material are shown and described. A photohardening inhibitor is admitted into a surface of a photohardenable material through a flexible film to create a “dead zone” where little or no solidification occurs. The dead zone prevents the exposed surface of the photohardenable material from solidifying in contact with the film. The inhibitor causes the film to deform along the build axis, thereby creating a non-planar interface between the photohardednable material and the film. A method is provided to compensate the three-dimensional object data based on the deformation of the film.

Abstract: A template substrate includes a pedestal portion on a first surface of a substrate. The template substrate defines an opening region provided in a second surface opposite to the first surface of the substrate. The opening region includes an opening end on a second surface side of the opening region corresponding to the second surface and a bottom surface on a first surface side of the opening region corresponding to the first surface. An area of the opening end is different from an area of the bottom surface.

Abstract: A method of manufacturing a substrate of a display device is provided. The method includes: providing a substrate body; coating a photoresist layer on the substrate body; exposing the photoresist layer by using a plurality lenses of an exposure machine through a mask, wherein the mask includes a light incident region and a light overlap region, the light overlap region includes a transparent zone and a non-transparent zone, and the light incident region includes a transparent zone and a non-transparent zone, and wherein an area of each transparent zone of the light overlap region is larger or smaller than an area of each transparent zone of the light incident region; and developing the photoresist layer after exposing to obtain a photoresist pattern. The embodiment of the disclosure also provides a mask applied to the method.

Abstract: In one instance, a method of manufacturing an integrated circuit includes a method for dicing a semiconductor wafer that includes disposing the semiconductor wafer on a moveable cutting table, cutting the semiconductor wafer, and ejecting a clearing fluid across an exposed side of the semiconductor wafer, with full coverage across the semiconductor wafer, at least during the cutting of the semiconductor wafer. The ejecting clearing fluid is ejected to form a layer or membrane of fluid that clears or reduces other fluids from the exposed side or surface of the semiconductor wafer. Other aspects are presented.

Abstract: An OLED packaging method is provided, in which a first outer bound confinement layer is first formed and then, a first organic layer is formed on the first inorganic layer in an area enclosed by the first outer bound confinement layer so that facilities for forming the first organic layer can be diversified and an organic material used to form the first organic layer is not subjected to constraint in respect of viscosity thereof, whereby using an organic material with a reduced viscosity allows for better homogeneity of the first organic layer, the thickness reduced, and thus helping reduce a curving radius of the OLED package structure to realize rollable displaying with a reduced curving radius. Further, the first outer bound confinement layer helps block external moisture and oxygen from corroding the first organic layer in a sideway direction.

Abstract: An imprint lithography method of configuring an optical layer includes selecting one or more parameters of a nanolayer to be applied to a substrate for changing an effective refractive index of the substrate and imprinting the nanolayer on the substrate to change the effective refractive index of the substrate such that a relative amount of light transmittable through the substrate is changed by a selected amount.

Abstract: Embodiments described herein provide a method shifting mask pattern data during a digital lithography process to reduce line waviness of an exposed pattern. The method includes providing a mask pattern data having a plurality of exposure polygons to a processing unit of a digital lithography system. The processing unit has a plurality of image projection systems that receive the mask pattern data. Each image projection system corresponds to a portion of a plurality of portions of a substrate and receives an exposure polygon corresponding to the portion. The substrate is scanned under the plurality of image projection systems and pluralities of shots are projected to the plurality of portions while shifting the mask pattern data. Each shot of the pluralities of shots is inside the exposure polygon corresponding to the portion.

Abstract: A pellicle composition for a photomask, a pellicle for a photomask, the pellicle for a photomask being formed from the pellicle composition, a method of forming the pellicle, a reticle including the pellicle, and an exposure apparatus for lithography including the reticle are provided. The pellicle composition includes: at least one selected from graphene quantum dots and a graphene quantum dot precursor, the graphene quantum dots having a size of about 50 nm or less; and a solvent.

Abstract: A method of optimizing a lithographic process for semiconductor fabrication includes determining that a semiconductor wafer experienced a photoresist exposure delay. At least one operating parameter of a post exposure baking process is adjusted based on the semiconductor wafer having experienced the photoresist exposure delay. The post exposure baking process is performed on the semiconductor wafer utilizing the adjusted at least one operating parameter.

Abstract: A thermally expandable sheet includes: a first thermally expansive layer that is formed on one side of a base and contains a first thermally expandable material and a first binder, the first thermally expansive layer having a first ratio of the first thermally expandable material with respect to the first binder; and a second thermally expansive layer that is formed on the first thermally expansive layer and contains a second thermally expandable material and a second binder, the second thermally expansive layer having a second ratio of the second thermally expandable material with respect to the second binder, wherein the second ratio is lower than the first ratio.

Abstract: A thermally expandable sheet includes: a first thermally expansive layer that is formed on one side of a base and contains a first thermally expandable material and a first binder, the first thermally expansive layer having a first ratio of the first thermally expandable material with respect to the first binder; and a second thermally expansive layer that is formed on the first thermally expansive layer and contains a second thermally expandable material and a second binder, the second thermally expansive layer having a second ratio of the second thermally expandable material with respect to the second binder, wherein the first ratio is lower than the second ratio.

Abstract: A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.

Abstract: Various embodiments provide a method of detaching semiconductor material from a carrier, wherein the method comprises providing a carrier having attached thereto a layer of semiconductor material, wherein the layer comprises an edge portion; and guiding an air stream onto the edge portion of the layer of semiconductor material.

Abstract: An apparatus for forming a three-dimensional image, the apparatus including a cartridge that stores ink which a printing head discharges and which has a photothermal conversion property; a conveying unit that conveys a thermally expandable material so as to pass the thermally expandable material through a first position where the printing head faces and so as to form an image on the thermally expandable material with the ink discharged by the printing head; and a light irradiating unit that emits light toward a second position which is in a downstream side from the first position in a conveying path of the conveying unit, so as to perform photothermal conversion. The cartridge is disposed at a position which deviates from an extending line of an irradiation path of the light irradiation unit.

Abstract: One aspect relates to a composite, including a ceramic body having a first layer surface and a second layer surface and at least one cermet conductor that electrically connects the surfaces. The composite includes a first layer with the first layer surface, a first ceramic, a first hole and a first cermet element in the first hole, a second layer with the second layer surface, a second ceramic, a second hole and a second cermet element in the second hole, and an intermediate layer that is located between the first and the second layer. The intermediate layer includes an intermediate layer ceramic, an intermediate hole and one intermediate cermet element in the intermediate hole. A projection of the cross-section of the first hole and a projection of the cross section of the second hole onto a plane Px,y are arranged offset to each other.

Abstract: A data transmission method of transmitting data of log information recorded in log data of a manufacturing apparatus to an external device includes: storing correspondence information between information of a first identifier and information of a second identifier, the first identifier being an identifier used to identify a thing about a process performed by the manufacturing apparatus and being shared by the manufacturing apparatus and the external device, the second identifier being an identifier used to identify a thing about a process performed by the manufacturing apparatus and being used by the manufacturing apparatus; and obtaining, based on the correspondence information, information of the first identifier corresponding to information of the second identifier recorded in log information, and transmitting data of the log information to which the obtained information of the first identifier has been added. The storing and the obtaining are executed by an information processing device.