Post Image Treatment To Produce Elevated Pattern Patents (Class 430/325)
  • Patent number: 10451974
    Abstract: The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, and a semiconductor device manufacturing method using the rinse composition in a photolithography method.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: October 22, 2019
    Assignee: AZ Electronic Materials (Luxembourg) S.a.r.l.
    Inventors: Kazuma Yamamoto, Yuriko Matsuura, Tomoyasu Yashima, Tatsuro Nagahara
  • Patent number: 10437146
    Abstract: A method for forming a 3D pattern structure on a 3D substrate and a device having color resist pattern is disclosed. The disclosure uses the fitting aids to apply pressure on the thin-film mask to paste on the 3D substrate. After the template device had formed, send the template device to the exposure machine, and then the high resolution photo-resist pattern is made on the 3D substrate. After a Lift-off procedure, the thin-film pattern is formed and the photo-resist is removed.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: October 8, 2019
    Inventor: Ming-An Hsu
  • Patent number: 10438822
    Abstract: A method and a device for prefixing substrates, whereby at least one substrate surface of the substrates is amorphized in at least one surface area, characterized in that the substrates are aligned and then make contact and are prefixed on the amorphized surface areas.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: October 8, 2019
    Assignee: EV Group E. Thallner GmbH
    Inventor: Friedrich Paul Lindner
  • Patent number: 10401727
    Abstract: A resist composition including a polymeric compound having 0 to 20 mol % of a structural unit containing a polar group-containing aliphatic hydrocarbon group, and an acid generator compound represented by general formula (b1-1) in which R101 represents a hydrocarbon group having at least 1 hydroxy group as a substituent; Y101 represents a single bond or a divalent linking group containing an oxygen atom; V101 represents a single bond, an alkylene group or a fluorinated alkylene group; R102 represents a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms; M?m+ represents an organic cation having a valency of m.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: September 3, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takashi Nagamine, Tsuyoshi Nakamura
  • Patent number: 10386723
    Abstract: A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive. The method further includes exposing the first layer to a radiation. The method further includes applying a developer to the exposed first layer, resulting in a pattern over the substrate, wherein the developer includes a developing chemical whose concentration in the developer is a function of time during the applying of the developer.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: August 20, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Chung-Cheng Wang
  • Patent number: 10353288
    Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: July 16, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Vineet Sharma, Sohan S. Mehta, Craig D. Higgins, Sunil K. Singh, Feng Wang
  • Patent number: 10345718
    Abstract: In a pattern forming method, a resist layer disposed on a wafer is exposed by an energy beam. A post-exposure-bake (PEB) is performed on the wafer with the exposed resist layer by using a PEB apparatus. After the PEB, the exposed resist layer is developed, thereby forming a resist pattern. The PEB apparatus includes a baking plate, and the wafer is placed on the baking plate for the PEB when a temperature of the wafer is within a predetermined temperature range.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: July 9, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Cheng Wang, Chun-Kuang Chen, Chia-Cheng Chao
  • Patent number: 10340161
    Abstract: A method and a device for prefixing substrates, whereby at least one substrate surface of the substrates is amorphized in at least one surface area, characterized in that the substrates are aligned and then make contact and are prefixed on the amorphized surface areas.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: July 2, 2019
    Assignee: EV Group E. Thallner GmbH
    Inventor: Friedrich Paul Lindner
  • Patent number: 10332751
    Abstract: A monomer, an organic layer composition including the monomer, an organic layer, and a method of forming patterns, the monomer being represented by Chemical Formula 1:
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: June 25, 2019
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Yoo-Jeong Choi, Yun-Jun Kim, Yu-Shin Park, You-Jung Park, Hyun-Ji Song
  • Patent number: 10325813
    Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, semiconductor fins extending in a first direction on the substrate, a hardmask layer on the semiconductor fins, and an isolation region surrounding the semiconductor fins and having an upper surface flush with the hardmask layer, the isolation region including a first region on a side of the semiconductor fins in the first direction and a second region on a side of the semiconductor fins in a second direction different from the first direction. The method also includes removing the hardmask layer, etching a portion of the first region above the semiconductor fins, forming a mask layer on the semiconductor fins and a remaining first region, etching the second region such that an upper surface of the remaining second region is lower than an upper surface of the semiconductor fins, and removing the mask layer.
    Type: Grant
    Filed: October 9, 2017
    Date of Patent: June 18, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Hai Yang Zhang, Fangyuan Xiao, Yan Wang
  • Patent number: 10303054
    Abstract: A photosensitive resin composition includes a binder resin, a black colorant, a photopolymerizable monomer, a photopolymerization initiator, and a solvent. The binder resin includes a first binder resin having a glass transition temperature of about ?50° C. to about 150° C. and a second binder resin having a glass transition temperature of greater than about 150° C.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: May 28, 2019
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Sang Soo Kim, Jinhee Kang, Heekyoung Kang, Chang-Hyun Kwon, Jiyun Kwon, Chanwoo Kim, Bumjin Lee, Junho Lee, Chungbeum Hong
  • Patent number: 10274847
    Abstract: A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: An-Ren Zi, Chin-Hsiang Lin, Ching-Yu Chang, Joy Cheng
  • Patent number: 10203602
    Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more resins and 2) one or more substituted isocyanurate compounds that are distinct from the 1) one or more resins.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: February 12, 2019
    Assignee: Rohm and Haas Electronic Materials Korea Ltd.
    Inventors: Eui-Hyun Ryu, Myung-Yeol Kim, EunHye Cho, Jung-June Lee, Jae Hwan Sim
  • Patent number: 10137644
    Abstract: According to one example, there in provided a system for processing three-dimensional object data representing a three-dimensional object to be generated by an additive manufacturing system. The system comprises a processor to perform a transformation on the three-dimensional object data, and to generate a plurality of slice images from the transformed three dimensional object data.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: November 27, 2018
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Alejandro Manuel de Pena, Sebastia Cortes Herms, Josep Giralt Adroher
  • Patent number: 10059821
    Abstract: A method is used to provide an electrically-conductive polyaniline pattern by providing a uniform layer of a photocurable composition on a substrate. The photocurable composition comprises a water-soluble reactive polymer comprising (a) greater than 40 mol % of recurring units comprising sulfonic acid or sulfonate groups, and (b) at least 5 mol % of recurring units comprising a pendant group capable of crosslinking via [2+2] photocycloaddition. The photocurable composition is exposed to cause crosslinking via [2+2] photocycloaddition of the (b) recurring units, thereby forming a crosslinked polymer. Any remaining water-soluble reactive polymer is removed. The crosslinked polymer is contacted with an aniline reactive composition having aniline monomer and up to 0.5 molar of an aniline oxidizing agent, thereby forming an electrically-conductive polyaniline disposed either within, on top of, or both within and on top of, the crosslinked polymer.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: August 28, 2018
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Thomas B. Brust, Anne Troxell Wyand, Grace Ann Bennett, Catherine A. Falkner
  • Patent number: 9996008
    Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.
    Type: Grant
    Filed: August 22, 2016
    Date of Patent: June 12, 2018
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Cheng-Bai Xu
  • Patent number: 9996002
    Abstract: A resist composition includes (A1) a resin which includes a structural unit represented by formula (a4), a structural unit having a cyclic carbonate and a structural unit represented by formula (I), the resin has no acid-labile group; (A2) a resin which has an acid-labile group; and an acid generator: wherein R3 represents a hydrogen atom or a methyl group, R4 represents a C1 to C24 saturated hydrocarbon group having a fluorine atom, and a methylene group contained in the saturated hydrocarbon group may be replaced by an oxygen atom or a carbonyl group, R1 represents a hydrogen atom or a methyl group, and L1 represents a single bond or a C1 to C18 divalent saturated hydrocarbon group where a methylene group may be replaced by an oxygen atom or a carbonyl group, and R2 represents a C3 to C18 alicyclic hydrocarbon group where a hydrogen atom may be replaced by a C1 to C8 aliphatic hydrocarbon group or a hydroxy group, provided that the carbon atom directly bonded to L1 has no aliphatic hydrocarbon group by
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: June 12, 2018
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Takashi Nishimura, Shota Nakano, Koji Ichikawa
  • Patent number: 9989846
    Abstract: Substrate patterning techniques herein protect against overlay misalignment. Techniques include using a combination of relief patterns in which one relief pattern includes openings filled with a particular photoresist and these openings have a width that is insufficient to enable wave propagation of electromagnetic radiation having wavelengths greater than a predetermined threshold wavelength. Accordingly, actinic radiation above a certain wavelength cannot affect the photoresist within these relatively small openings. Photoresist filled within these openings can be removed by specific developers with the openings partially uncovered, which helps ensure features and connections are fabricated as designed.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: June 5, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Anton J. deVilliers, Jeffrey Smith
  • Patent number: 9983478
    Abstract: A resist composition includes (A1) a resin which includes a structural unit represented by formula (a4), and a structural unit having an adamantane lactone group, and the resin has no acid-labile group, (A2) a resin having an acid-labile group, and an acid generator. In the formula (a4), R3 represents a hydrogen atom or a methyl group, and R4 represents a C1 to C24 saturated hydrocarbon group having a fluorine atom, and a methylene group of the saturated hydrocarbon group may be replaced by an oxygen atom or a carbonyl group.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: May 29, 2018
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Masahiko Shimada, Yuki Suzuki, Koji Ichikawa
  • Patent number: 9971081
    Abstract: A backlight unit includes LEDs, a light guide plate, a prism sheet, exiting light reflecting portions, prisms, concave lenticular lenses, and flat portions. The concave lenticular lenses are configured such that an occupancy rate of concave cylindrical lenses with respect to the second direction is higher in an area closer to a light entering surface with respect to the first direction and the occupancy rate is lower in an area farther from the light entering surface. The flat portions are formed adjacent to the concave cylindrical lenses with respect to the second direction such that an occupancy rate of flat portions with respect to the second direction is lower in an area closer to a light entering surface with respect to the first direction and the occupancy rate of the flat portions with respect to the second direction is higher in an area farther from the light entering surface.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: May 15, 2018
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Yoshinobu Hirayama, Takao Imaoku, Takeshi Ishida, Ryuzo Yuki, Shugo Yagi
  • Patent number: 9952366
    Abstract: A patterning method includes forming guide layer patterns, which are separated from each other, on a top surface of a base substrate, forming a neutral layer, which includes a random copolymer comprising first blocks or second blocks, on an entirety of the top surface of the base substrate exposed between the guide layer patterns, forming hydrophobic layer patterns which extend from top surfaces of the guide layer patterns to side surfaces of the guide layer patterns and are separated from each other, coating a block copolymer, which comprises the first blocks and the second blocks, on a top surface of the neutral layer exposed between the hydrophobic layer patterns, alternately arranging the first blocks and the second blocks by heat-treating or solvent-annealing the block copolymer, and forming block copolymer patterns by removing the first blocks or the second blocks.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: April 24, 2018
    Assignee: SAMSUNG DISPLAY CO. LTD.
    Inventors: Min Hyuck Kang, Eun Ae Kwak, Lei Xie, Moon Gyu Lee, Hyeong Gyu Jang
  • Patent number: 9915770
    Abstract: A backlight unit includes LEDs, a light guide plate, a prism sheet, exiting light reflecting portions, prisms, concave lenticular lens lenses, and flat portions. The concave lenticular lenses are configured such that an occupancy rate of concave cylindrical lenses with respect to the second direction is higher in an area closer to a light entering surface with respect to the first direction and the occupancy rate is lower in an area farther from the light entering surface. The flat portions are formed adjacent to the concave cylindrical lenses with respect to the second direction such that an occupancy rate of flat portions with respect to the second direction is lower in an area closer to a light entering surface with respect to the first direction and the occupancy rate of the flat portions with respect to the second direction is higher in an area farther from the light entering surface.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: March 13, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshinobu Hirayama, Takao Imaoku, Takeshi Ishida, Ryuzo Yuki, Shugo Yagi
  • Patent number: 9833311
    Abstract: This invention describes Ophthalmic Devices with media inserts that have nanostructured Metasurface elements upon or within them. In some embodiments passive ophthalmic devices of various kinds may be formed. Methods and devices for active ophthalmic devices based on Metasurface structures may also be formed.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: December 5, 2017
    Assignee: Johnson & Johnson Vision Care, Inc.
    Inventors: Randall B. Pugh, Frederick A. Flitsch
  • Patent number: 9818612
    Abstract: Disclosed is a method for manufacturing a semiconductor device. The method includes: a first pattern forming step of forming, on a pattern forming target film, a first film that is patterned to have a first pattern that includes lines which are aligned with each other with spaces of a predetermined interval being interposed therebetween, and include a portion separated by using a first cut mask; a step of forming a second film to cover a surface of the first film; and a second pattern forming step of forming a pattern forming target film that is patterned to have a second pattern, by separating a portion of the space of the first step using a second cut mask. The first and second cut mask includes a plurality of openings or light shielding portions that have equal shapes, respectively.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: November 14, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hidetami Yaegashi
  • Patent number: 9753369
    Abstract: Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: September 5, 2017
    Assignee: NISSAN CHEMICAL IDUSTRIES, LTD.
    Inventors: Rikimaru Sakamoto, Yasushi Sakaida, Bangching Ho
  • Patent number: 9753370
    Abstract: Multiple-pattern forming methods are provided.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: September 5, 2017
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC, Rohm and Haas Electronic Materials Korea Ltd.
    Inventors: Chang-Young Hong, Cheng-Bai Xu, Jung Woo Kim, Cong Liu, Shintaro Yamada, Lori Anne Joesten, Choong-Bong Lee, Phillip D. Hustad, James C. Taylor
  • Patent number: 9665005
    Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: May 30, 2017
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Vipul Jain, Mingqi Li, Huaxing Zhou, Jong Keun Park, Phillip D. Hustad, Jin Wuk Sung
  • Patent number: 9651863
    Abstract: The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: May 16, 2017
    Assignee: FUJIFILM Corporation
    Inventors: Hiroo Takizawa, Shuji Hirano, Natsumi Yokokawa, Wataru Nihashi
  • Patent number: 9613821
    Abstract: Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: April 4, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yool Kang, Dong-won Kim, Ju-young Kim, Tae-hoon Kim, Hye-ji Kim, Su-min Park, Hyung-rae Lee
  • Patent number: 9499513
    Abstract: Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: November 22, 2016
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: James F. Cameron, Vipul Jain, Paul J. Labeaume, Jin Wuk Sung, James W. Thackeray
  • Patent number: 9494866
    Abstract: A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: November 15, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Tsuyoshi Nakamura, Jiro Yokoya, Hiroaki Shimizu, Hideto Nito
  • Patent number: 9352073
    Abstract: A functional film that is applied to a surface of a medical apparatus or a biomaterial includes a film of Ti-doped tetrahedral amorphous carbon (ta-C:Ti film).
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: May 31, 2016
    Assignee: NIKO CORPORATION
    Inventors: Yusuke Taki, Tsukasa Kishiume
  • Patent number: 9335636
    Abstract: A photopolymer layer is formed on an organic device substrate and exposed to patterned radiation. The photopolymer layer includes a photopolymer comprising at least a first repeating unit having an acid-catalyzed, solubility-altering reactive group, wherein the total fluorine content of the photopolymer is less than 30% by weight. The pattern exposed photopolymer is contacted with a developing agent, such as a developing solution, to remove unexposed photopolymer, thereby forming a developed structure having a first pattern of exposed photopolymer covering the substrate and a complementary second pattern of uncovered substrate corresponding to the unexposed photopolymer. The developing agent comprises at least 50% by volume of a hydrofluoroether developing solvent.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: May 10, 2016
    Assignee: ORTHOGONAL, INC.
    Inventors: John Andrew DeFranco, Francis Houlihan, Charles Warren Wright, Diane Carol Freeman, Frank Xavier Byrne, Douglas Robert Robello, Sandra Rubsam, Terrence Robert O'Toole
  • Patent number: 9329482
    Abstract: A conductive pattern can be formed using a polymeric layer that contains a reactive composition that comprises a reactive polymer that is metal ion-complexing, water-soluble, and crosslinkable. This reactive polymer comprises pendant thiosulfate groups as well as metal ion-complexing and water solubilizing groups. The reactive composition can be patternwise exposed to suitable radiation to induce crosslinking within the reactive polymer. The reactive composition and reactive polymer in the non-exposed regions can be removed due to their aqueous solubility, but the exposed regions of the polymeric layer are contacted with electroless seed metal ions, which are then reduced. The resulting electroless seed metal nuclei are electrolessly plated with a suitable metal to form the desired conductive pattern. Various articles can be prepared during this process, and the product article can be incorporated into various electronic devices.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: May 3, 2016
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Mark Edward Irving, Thomas B. Brust, Grace Ann Bennett
  • Patent number: 9329282
    Abstract: The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd1-xMgxTe in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd1-xMgxTe crystal in the composition range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te; (b) providing an electrical contact means for connecting the Cd1-xMgxTe crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: May 3, 2016
    Assignee: International Crystal Laboratories
    Inventors: Robert D. Herpst, Vladimir Yakimovich
  • Patent number: 9256126
    Abstract: The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: February 9, 2016
    Assignee: IRRESISTIBLE MATERIALS LTD
    Inventors: Alex Philip Graham Robinson, Jon Andrew Preece, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang, Alexandra McClelland, Drew Athens, Xiang Xu
  • Patent number: 9256133
    Abstract: An apparatus includes at least two tanks, at least two pumps, at least one nozzle, and a chuck. The apparatus provides multiple developers with different polarities during a developing process to target portions of a latent resist profile having different polarities, and thus different solubility. This apparatus also allows a mixture of two developers to be used for the resist film developing. A polarity of the mixture is adjustable by controlling a ratio of one pump flow rate to another pump flow rate and further controlling the resist pattern profile.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: February 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Ching-Yu Chang
  • Patent number: 9209038
    Abstract: Methods for fabricating integrated circuits and for forming masks for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit includes providing a patternable structure having first and second regions and including upper and lower mandrel layers. The method etches upper mandrels from the upper mandrel layer in the first and second regions. The method includes forming first upper spacer structures having a first width adjacent upper mandrels in the first region and forming second upper spacer structures having a second width not equal to the first width adjacent upper mandrels in the second region. The method etches the lower mandrel layer using the first and second upper spacer structures as an etch mask to form lower mandrels. Further, the method includes forming spacers adjacent the lower mandrels and etching a material using the spacers as an etch mask to form variably spaced features.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: December 8, 2015
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Jason Richard Cantone, Linus Jang, Ryan Ryoung-Han Kim
  • Patent number: 9145360
    Abstract: Methods and compositions including a compound represented by formula (I): wherein n represents an integer of from 1 to 4, RHL('s) each independently represents Cl or F, and R1 represents an alkyl group having from 8 to 20 carbon atoms.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: September 29, 2015
    Assignee: FUJI XEROX CO., LTD.
    Inventors: Yuki Sasaki, Hirotaka Matsuoka, Satoshi Hiraoka, Fumiaki Mera, Yasuo Matsumura
  • Patent number: 9125315
    Abstract: To provide a method for producing a conductive film with excellent transparency and conductivity by a simple method suitable for large-area production. A method for producing a conductive film comprising a step of placing a template (B), having openings in a mesh structure running from the side that is to contact a substrate (A) through to the back side, on the surface of the substrate (A), and spreading a dispersion (D) of conductive particles (P) on the surface of the substrate (A) on which the template (B) has been placed, and drying it, thereby forming a mesh-like structure (C) of the conductive particles (P) near the points of contact between the substrate (A) and the template (B), and then removing the template (B) from the substrate (A) to form a mesh-like structure (C) of the conductive particles (P) on the surface of the substrate (A).
    Type: Grant
    Filed: January 18, 2011
    Date of Patent: September 1, 2015
    Assignees: Kyoto University, SANYO CHEMICAL INDUSTRIES, LTD., Mitsubishi Rayon Co., Ltd.
    Inventors: Ko Higashitani, Yasuhiro Tsudo, Masaki Nakayama, Shinji Kake
  • Patent number: 9122155
    Abstract: A sulfonium salt used in a resist composition which gives a pattern having a high resolution, and small roughness in the photolithography using a high energy beam as a light source, and further difficultly eluted in water in the immersion lithography, and a resist composition containing the sulfonium salt, and a patterning process using the resist composition, wherein the sulfonium salt is represented by the following general formula (1a), wherein R represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms at least one or more of the hydrogen atoms of which are substituted by a fluorine atom, R0 represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be substituted by a halogen atom, or interposed by a heteroatom.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: September 1, 2015
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaki Ohashi, Tomohiro Kobayashi, Akihiro Seki, Masayoshi Sagehashi, Masahiro Fukushima
  • Patent number: 9104106
    Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: August 11, 2015
    Assignee: LG CHEM, LTD.
    Inventors: Chan-Hyo Park, Kyung-Jun Kim, Yu-Na Kim
  • Patent number: 9104108
    Abstract: The present invention provides a holder for holding a substrate, the holder including a base to be received by a table, the base including a first surface arranged to receive the substrate to be held by the holder and a second surface opposite to the first surface, a first support provided on the second surface and arranged to surround a through hole formed in the base and configured to contact the table, a second support provided on the second surface and arranged to surround the first support and to contact the table, and a plurality of first pins provided in a region of the second surface between the second support and an outer edge of the base and arranged to contact the table.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: August 11, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Shigeo Koya
  • Patent number: 9097977
    Abstract: A method for patterning a substrate with reduced defectivity is described. Once a pattern is formed in a layer of radiation-sensitive material using lithographic techniques, the pattern formed on the substrate is post-treated. The post-treating of the pattern in the layer of radiation-sensitive material is performed to reduce a roughness of the pattern. The post-treating includes performing a treatment process on the pattern to alter a solubility of an exposed surface of the pattern, wherein the treatment process involves performing a first chemical treatment of the pattern using a liquid-phase chemical solution containing a first surfactant, or exposing said pattern to second EM radiation different than said first EM radiation. Following the treatment process, the post-treating includes hard baking the pattern, and performing a second chemical treatment of the pattern using a vapor-phase chemical solution to reduce the roughness.
    Type: Grant
    Filed: August 10, 2012
    Date of Patent: August 4, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Shinichiro Kawakami
  • Patent number: 9075312
    Abstract: Monomeric formulations appropriate for creating self-propagating polymer optical waveguides, and methods for their fabrication, are disclosed. Multiple polymer waveguides can be fabricated simultaneously into a three-dimensional micro-truss structure, while avoiding significant polymerization outside the confines of the illuminated region. The formulations described to accomplish this controlled polymerization include species containing one or more unsaturated carbon-carbon bonds capable of being free-radical polymerized in the presence of photoinitiator and either a radical inhibitor species or a solvent, or both. The radical inhibitor and/or solvent are included to minimize heat buildup and thermal decomposition of initiator. This invention enhances the versatility of the chemistry by significantly increasing the number of chemical building blocks available for micro-truss fabrication.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: July 7, 2015
    Assignee: HRL Laboratories, LLC
    Inventors: Andrew P. Nowak, Alan J. Jacobsen, Sophia S. Yang
  • Patent number: 9067402
    Abstract: A method for forming an image on a flexographic plate includes exposing a back of the flexographic plate to form a floor; providing a screened image; locating isolated dots on the screened image; exposing a front of the flexographic plate to form the image, isolated dots and scaffold dots adjacent to the isolated dots; wherein the scaffold dots do not extend to the floor; and applying a solvent to wash away the unexposed material and the scaffold dots from the flexographic plate.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: June 30, 2015
    Assignee: EASTMAN KODAK COMPANY
    Inventor: Richard R. Bielak
  • Patent number: 9045464
    Abstract: The present invention provides a quinolone compound represented by General Formula (1) or a salt thereof, wherein R1 represents a hydrogen atom, etc.; R2 represents a hydrogen atom, etc.; R3 represents a phenyl group optionally being substituted with one or more substituents, etc.; R4 represents a halogen atom; R5 represents a hydrogen atom or halogen atom; R6 represents a hydrogen atom; and R7 represents a hydroxyl group, etc. The quinolone compound have a functional improvement effect, which suppresses progression of neurological dysfunction by inhibiting the chronic progression of Parkinson's disease or protecting dopamine neurons from the disease etiology, thereby prolonging the period before first administration begins.
    Type: Grant
    Filed: January 3, 2014
    Date of Patent: June 2, 2015
    Assignee: OTSUKA PHARMACEUTICAL CO., LTD.
    Inventors: Kenji Otsubo, Yuji Ochi, Masami Nakai, Atsushi Mori
  • Patent number: 9046769
    Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: June 2, 2015
    Assignee: JSR CORPORATION
    Inventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
  • Patent number: 9046772
    Abstract: A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are a monovalent hydrocarbon group, R4 to R9 are hydrogen or a monovalent hydrocarbon group, R10 is a monovalent hydrocarbon group or fluorinated hydrocarbon group, A1 is a divalent hydrocarbon group, k1 is 0 or 1, and n1A is 0, 1 or 2. A resist composition comprising the polymer displays a high dissolution contrast during organic solvent development.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: June 2, 2015
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masayoshi Sagehashi, Koji Hasegawa, Kazuhiro Katayama
  • Publication number: 20150147698
    Abstract: A negative resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R1 is H or methyl, X is a single bond or —C(?O)—O—R4—, R2 is a single bond or C1-C4 alkylene, R3 is C2-C8 alkylene, R4 is a single bond or C1-C4 alkylene, and 0<a?1.0. The composition exhibits a high resolution due to controlled acid diffusion and forms a resist film which is unsusceptible to swell in the developer and hence to pattern collapse.
    Type: Application
    Filed: November 25, 2014
    Publication date: May 28, 2015
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masayoshi Sagehashi