Processing Feature Prior To Imaging Patents (Class 430/327)
  • Patent number: 9393737
    Abstract: Disclosed is a resin mold for nanoimprinting, which has a resin layer having fine depressions and protrusions formed on the surface, wherein the resin layer is formed from 1 to 49 parts by weight of a silicone-based macromonomer and/or a fluorine-based macromonomer and 99 to 51 parts by weight of at least one polymerizable monomer selected from the group consisting of a (meth)acrylic monomer, a styrene-based monomer, an epoxy-based monomer, an olefin-based monomer and a polycarbonate-based resin-forming monomer. The silicone-based macromonomer and/or the fluorine-based macromonomer has a molecular weight of 600 to 10000 and has, at an end of molecule, a reactive group copolymerizable with the polymerizable monomer, and when the reactive group is copolymerized with the polymerizable group, silicone-based units or fluorine-based units that constitute the macromonomer form side chains on a trunk polymer formed from the polymerizable monomer and the macromonomer.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: July 19, 2016
    Assignee: Soken Chemical & Engineering Co., Ltd.
    Inventors: Satoshi Uehara, Takahide Mizawa
  • Patent number: 9250529
    Abstract: The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.
    Type: Grant
    Filed: July 8, 2012
    Date of Patent: February 2, 2016
    Assignee: International Business Machines Corporation
    Inventors: Hiroshi Ito, Daniel Paul Sanders, Linda Karin Sundberg
  • Patent number: 8993201
    Abstract: Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: March 31, 2015
    Assignee: Asahi Glass Company, Limited
    Inventors: Masaki Mikami, Mitsuhiko Komakine, Yoshiaki Ikuta
  • Patent number: 8980724
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: March 17, 2015
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Patent number: 8895229
    Abstract: A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: November 25, 2014
    Assignee: JSR Corporation
    Inventors: Yukio Nishimura, Norihiko Sugie, Hiromitsu Nakashima, Norihiro Natsume, Daita Kouno
  • Patent number: 8877425
    Abstract: A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.
    Type: Grant
    Filed: October 20, 2011
    Date of Patent: November 4, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Yuta Kanno, Makoto Nakajima, Tomoko Misaki, Motonobu Matsuyama, Masayuki Haraguchi
  • Patent number: 8859194
    Abstract: A polymer compound and a resist protective film composition for an immersion lithography process including the same.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: October 14, 2014
    Assignee: Dongjin Semichem Co., Ltd.
    Inventors: Man Ho Han, Jong Kyoung Park, Hyun Jin Kim, Jae Hyun Kim
  • Publication number: 20140272728
    Abstract: A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventor: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
  • Patent number: 8828493
    Abstract: Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: September 9, 2014
    Assignee: International Business Machines Corporation
    Inventors: Joy Cheng, William D. Hinsberg, Charles Thomas Rettner, Daniel Paul Sanders
  • Patent number: 8821978
    Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: September 2, 2014
    Assignee: International Business Machines Corporation
    Inventors: Joy Cheng, William D. Hinsberg, Ho-Cheol Kim, Young-Hye Na, Daniel Paul Sanders, Linda Karin Sundberg, Hoa D. Truong, Gregory Michael Wallraff, Atsuko Ito
  • Patent number: 8822128
    Abstract: The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: September 2, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Motoaki Iwabuchi, Tsutomu Ogihara
  • Patent number: 8815496
    Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: August 26, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiao-Tzu Lu, Kuei Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu
  • Patent number: 8773636
    Abstract: Technologies are generally described for methods, systems, and structures that include patterns formed by optical lithography. In some example methods, a photoresist layer is applied to a substrate, and a grapheme layer can be applied to the photoresist layer. Light can be applied through a mask to the graphene layer, where the mask includes a pattern. The light can form the pattern on the graphene layer such that the pattern forms on the photoresist layer.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: July 8, 2014
    Assignee: Empire Technology Development, LLC
    Inventors: Thomas A. Yager, Seth Adrian Miller
  • Patent number: 8735049
    Abstract: A method of making a relief printing element in a liquid photopolymer platemaking process is described. The method comprises the steps of: (a) selectively exposing the liquid photopolymer to actinic radiation through a negative to crosslink and cure portions of the liquid photopolymer; and (b) reclaiming uncured portions of the liquid photopolymer to be reused in the platemaking process. The step of reclaiming uncured portions of the liquid photopolymer comprises (i) heating the printing element to decrease the viscosity of the uncured liquid photopolymer; and (ii) removing uncured liquid photopolymer from the surface of the relief image printing element so that recovery of uncured liquid photopolymer from the surface of the relief image printing element is enhanced.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: May 27, 2014
    Inventor: Ryan W. Vest
  • Patent number: 8728706
    Abstract: A radiation-sensitive resin composition includes a first polymer including an acid-labile group, an acid generator to generate an acid upon exposure to radiation, and a second polymer including a fluorine atom and a functional group shown by a general formula (x). The second polymer has a fluorine atom content higher than a fluorine atom content of the first polymer. R1 represents an alkali-labile group. A represents an oxygen atom, —NR?—, —CO—O—# or —SO2—O—##, wherein the oxygen atom represented by A is not an oxygen atom bonded directly to an aromatic ring, a carbonyl group, or a sulfoxyl group, R? represents a hydrogen atom or an alkali-labile group, and “#” and “##” indicates a bonding hand bonded to R1.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: May 20, 2014
    Assignee: JSR Corporation
    Inventors: Yuusuke Asano, Mitsuo Satou, Hiromitsu Nakashima, Kazuki Kasahara, Yoshifumi Oizumi, Masafumi Hori, Takanori Kawakami, Yasuhiko Matsuda, Kazuo Nakahara
  • Patent number: 8709908
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: April 29, 2014
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Patent number: 8697344
    Abstract: A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: April 15, 2014
    Assignee: JSR Corporation
    Inventors: Daita Kouno, Norihiko Sugie, Gouji Wakamatsu, Norihiro Natsume, Yukio Nishimura, Makoto Sugiura
  • Patent number: 8623589
    Abstract: The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, where Y is selected from an carboxylate anion or sulfonate anion, R1, R2, and R3 are independently selected from unsubstituted C1-C8 alkyl, substituted C1-C8 alkyl, aryl and arylene-hydroxyl; X1, X2, and X3 are independently selected from direct valence bond and C1-C8 alkylene group, and, n=1, 2 or 3. The invention further relates to a process for using the composition.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: January 7, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Takanori Kudo, Alberto Dioses, Edward Ng, Srinivasan Chakrapani, Munirathna Padmanaban
  • Patent number: 8563229
    Abstract: Spacers are formed by pitch multiplication and a layer of negative photoresist is deposited on and over the spacers to form additional mask features. The deposited negative photoresist layer is patterned, thereby removing photoresist from between the spacers in some areas. During patterning, it is not necessary to direct light to the areas where negative photoresist removal is desired, and the clean removal of the negative photoresist from between the spacers is facilitated. The pattern defined by the spacers and the patterned negative photoresist is transferred to one or more underlying masking layers before being transferred to a substrate.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: October 22, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Luan C. Tran
  • Patent number: 8541165
    Abstract: A resin film forming method for forming a resin film on a substrate includes forming an intermediate layer on the substrate which includes an inorganic composition as a main component to chemically bond the resin film to be formed on the substrate to the substrate, carrying out a treatment on the substrate to remove an edge of the intermediate layer from an edge of the substrate, forming the resin film on the substrate by spin coating, chemically bonding the resin film to the substrate and hardening the resin film, and removing an edge of the resin film from the edge of the substrate by applying vibrations to the hardened resin film.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: September 24, 2013
    Assignee: Fujitsu Limited
    Inventor: Tomomi Sato
  • Patent number: 8524442
    Abstract: A combined laminating and exposing apparatus for exposing a photosensitive printing blank to actinic radiation in a printing plate manufacturing system and a method of using the same are disclosed. The photosensitive printing blank comprises a backing layer, at least one photocurable layer disposed on the backing layer, and a laser ablatable mask layer disposed on the at least one photocurable layer, wherein the laser ablatable mask layer is laser ablated to create an in situ negative in the laser ablatable mask layer. The exposing apparatus comprises: (a) a laminating apparatus for laminating an oxygen barrier layer to a top of the laser ablated mask layer; (b) a conveyor; (c) a first exposing device for imagewise exposing the at least one photocurable layer to actinic radiation, and (d) a second exposing device for exposing the at least one photocurable layer to actinic radiation through the backing layer.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: September 3, 2013
    Inventors: David A. Recchia, Kyle P. Baldwin, Timothy Gotsick
  • Patent number: 8465903
    Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: June 18, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Timothy W. Weidman, Timothy Michaelson, Paul Deaton, Nitin K. Ingle, Abhijit Basu Mallick, Amit Chatterjee
  • Patent number: 8460857
    Abstract: In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: June 11, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideaki Kuwabara
  • Patent number: 8460856
    Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: June 11, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiao-Wei Yeh, Jen-Chieh Shih, Jian-Hong Chen
  • Patent number: 8440387
    Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: May 14, 2013
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip Brock, Daniel P. Sanders, Linda K. Sundberg
  • Patent number: 8426112
    Abstract: There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): where X1 is a group of Formula (2), Formula (3), Formula (4) or Formula (4-1): and a solvent. The polymer may contain, besides the partial structure of Formula (1), a partial structure of Formula (5): (R1)a(R3)bSi(O—)4?(a+b)??Formula (5) and/or a partial structure of Formula (6): [(R4)cSi(O—)3?c]2Y??Formula (6).
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: April 23, 2013
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Makoto Nakajima, Wataru Shibayama, Yuta Kanno
  • Patent number: 8415083
    Abstract: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: April 9, 2013
    Assignee: Brewer Science Inc.
    Inventors: Sam X. Sun, Hao Xu, Tony D. Flaim
  • Patent number: 8415088
    Abstract: A method for forming a material layer with an anti-reflective layer as the top surface. The method comprises steps of providing a material layer and performing an ion implantation process to change a plurality of physical properties of a portion of the material layer near a top surface of the material layer so as to covert the portion of the material layer into an anti-reflective layer.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: April 9, 2013
    Assignee: MACRONIX International Co., Ltd.
    Inventor: Yu-Lin Yen
  • Patent number: 8394576
    Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: March 12, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiao-Tzu Lu, Kuei Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu
  • Patent number: 8329387
    Abstract: The present invention relates to an antireflective coating composition comprising a novel polymer without an aromatic chromophore, where the polymer comprises a structural unit derived from an aminoplast and a structural unit derived from a diol, triol, dithiol, trithiol, other polyols, diacid, triacid, other polyacids, diimide or mixture thereof, where the diol, dithiol, triol, trithiol, diacid, triacid, diimide, diamide or imide-amide optionally contain one or more nitrogen and/or sulfur atoms or contain one or more alkene groups. The invention also relates to the novel polymer and a process for using the novel antireflective coating composition in a lithographic process.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: December 11, 2012
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Huirong Yao, Guanyang Lin, Jian Yin, Hengpeng Wu, Mark Neisser, Ralph Dammel
  • Patent number: 8323875
    Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: December 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bon Won Koo, Joon Yong Park, Jung Seok Hahn, Joo Young Kim, Kook Min Han, Sang Yoon Lee
  • Patent number: 8323880
    Abstract: Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). In the formula, R1 and R3 independently represent a methyl group, and R2 represents an alkyl group having 12-18 carbon atoms.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: December 4, 2012
    Assignee: Kanto Kagaku Kabushiki Kaisha
    Inventors: Yutaka Murakami, Norio Ishikawa, Taku Murata, Kenji Saito, Ryosuke Araki
  • Patent number: 8283112
    Abstract: A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: October 9, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Kevin J. Torek, Todd R. Abbott, Sandra Tagg, Amy Weatherly
  • Patent number: 8278026
    Abstract: A method for improving the efficiency of the electron-beam exposure is provided, comprising: step 1) coating a positive photoresist on a wafer to be processed, and performing a pre-baking; step 2) separating pattern data, optically exposing a group of relatively large patterns, and then performing a post-baking; step 3) developing the positive photoresist; step 4) performing a plasma fluorination; step 5) performing a baking to solidify the photoresist; step 6) coating a negative electron-beam resist and performing a pre-baking; step 7) electron-beam exposing a group of fine patterns; step 8) performing a post-baking; and step 9) developing the negative electron-beam resist, so that the fabrication of the patterns is finished. According to the invention, it is possible to save 30-60% of the exposure time. Thus, the exposure efficiency is significantly improved, and the cost is greatly reduced. Further, the method is totally compatible with the CMOS processes, without the need of any special equipments.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: October 2, 2012
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Qiuxia Xu, Gaobo Xu
  • Patent number: 8241841
    Abstract: The present invention provides a process for producing a surface-modified layer system comprising a substrate (2) and a self-assembled monolayer (SAM) (1) anchored to its surface. The SAM (1) is comprised by aryl or rigid alicyclic moiety species. The process comprises providing a polymorphic SAM (1) anchored to the substrate (2), and thermally treating (4) the SAM to change from a first to a second structural form thereof. The invention also provides a thermolithographic form of process in which the thermal treatment (4) is used to transfer a pattern (3) to the SAM (1), which is then developed.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: August 14, 2012
    Assignee: The University Court of the University of St. Andrews
    Inventors: Manfred Buck, Piotr Cyganik
  • Patent number: 8211619
    Abstract: The present invention provides: a positive photosensitive composition that yields an insulation layer superior not only in high transparency, but also in heat resistance enduring a temperature during the production of a substrate, solvent resistance, and anti-aging property as a permanent resist; a positive permanent resist utilizing the positive photosensitive composition; and a method for producing the positive permanent resist. The present invention provides: a positive photosensitive composition containing (A) a curable silicone resin having a silanol group, which resin has a structure obtained by a reaction between one or more cyclic siloxane compounds represented by the following general formula (1): and one or more arylalkoxysilane compounds represented by the following general formula (2): (B) diazonaphthoquinones, and (C) a solvent; a positive permanent resist using the positive photosensitive composition; and a method for producing the positive permanent resist.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: July 3, 2012
    Assignee: Adeka Corporation
    Inventors: Hiroshi Morita, Hiromi Sato, Atsushi Kobayashi, Jinichi Omi, Seiichi Saito
  • Patent number: 8206893
    Abstract: Novel, developer-soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a multi-functional acid reacted with a multi-functional vinyl ether to form a branched polymer or oligomer. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light and post-exposure baking, the cured polymers/oligomers will decrosslink and depolymerize, rendering the layer soluble in typical photoresist developing solutions (e.g., alkaline developers).
    Type: Grant
    Filed: October 30, 2008
    Date of Patent: June 26, 2012
    Assignee: Brewer Science Inc.
    Inventors: Hao Xu, Ramil-Marcelo L. Mercado, Douglas J. Guerrero, Jim D. Meador
  • Patent number: 8192922
    Abstract: A method of optical fabrication comprises coating a substrate with a photocuring material, controlling the application of light to the photocuring material so as to control the intensity and pattern of the light both in-plane and out of plane, and developing the photocuring material.
    Type: Grant
    Filed: October 3, 2006
    Date of Patent: June 5, 2012
    Assignee: Carnegie Mellon University
    Inventors: Chao-Min Cheng, Bin Li, Philip R. LeDuc
  • Patent number: 8163468
    Abstract: Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: April 24, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Yoshiki Hishiro, Lijing Gou, Scott E. Sills, Hiroyuki Mori, Paul D. Shirley, Troy V. Gugel, Adam L. Olson
  • Patent number: 8133659
    Abstract: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.
    Type: Grant
    Filed: January 29, 2009
    Date of Patent: March 13, 2012
    Assignee: Brewer Science Inc.
    Inventors: Sam X. Sun, Hao Xu, Tony D. Flaim
  • Patent number: 8133644
    Abstract: A method of forming an image having multiple phases is disclosed herein. The method includes forming exposed and unexposed areas, the exposed areas comprising a first polymer network exhibiting first and second phases that are chemically connected and have different refractive indices, the first phase being continuous, and the second phase comprising a plurality of structures dispersed within the first phase, and the unexposed areas comprising a second polymer network comprising third and fourth phases that are chemically connected and have different refractive indices, the third phase being continuous, and the fourth phase comprising a plurality of structures dispersed within the third phase. The first and second polymer networks are chemically connected, and morphology formed by the first and second phases is different than that formed by the third and fourth phases.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: March 13, 2012
    Assignee: 3M Innovative Properties Company
    Inventors: Mieczyslaw H. Mazurek, Raymond P. Johnston, John E. Potts, Marc D. Radcliffe, Kevin R. Schaffer, Audrey A. Sherman, Wendi J. Winkler
  • Patent number: 8129101
    Abstract: A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: March 6, 2012
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
  • Patent number: 8124319
    Abstract: A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.
    Type: Grant
    Filed: April 12, 2010
    Date of Patent: February 28, 2012
    Assignee: Nanya Technology Corp.
    Inventors: Pei-Lin Huang, Chun-Yen Huang, Yi-Ming Wang
  • Patent number: 8124327
    Abstract: The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: February 28, 2012
    Assignee: International Business Machines Corporation
    Inventors: Gregory Breyta, Daniel Paul Sanders, Hoa D. Truong
  • Patent number: 8124323
    Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.
    Type: Grant
    Filed: September 25, 2007
    Date of Patent: February 28, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiao-Tzu Lu, Keui Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu
  • Patent number: 8110336
    Abstract: A resin comprising a structural unit represented by the formula (I): wherein Q1 and Q2 represent a fluorine atom etc., U represents a C1-C20 divalent hydrocarbon group in which one or more —CH2— may be replaced by —O— etc., X1 represents —O—CO— etc., and A+ represents an organic counter ion.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: February 7, 2012
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Ichiki Takemoto, Nobuo Ando
  • Patent number: 8105738
    Abstract: Disclosed is a developing method that performs a developing for forming a second resist pattern after forming and exposing a resist film on a surface of a substrate on which a first resist pattern is formed. The method includes a first process for developing the substrate for a first time period t1 in the state where the substrate stops, and a second process for developing the substrate for a second time period while rotating the substrate. The time ratio of first time period and second time period is adjusted so that a critical dimension of the first resist pattern is equal to a first predetermined value, and a total time of first time period and second time period is adjusted so that a critical dimension of the second resist pattern is equal to a second predetermined value.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: January 31, 2012
    Assignee: Tokyo Electron Limited
    Inventor: Kousuke Yoshihara
  • Patent number: 8105758
    Abstract: A maskless lithography system and method to expose a pattern on a wafer by propagating a photon beam through a waveguide on a substrate in a plane parallel to a top surface of the wafer.
    Type: Grant
    Filed: July 11, 2007
    Date of Patent: January 31, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Tymon Barwicz, Milos Popovic
  • Patent number: 8088565
    Abstract: An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: January 3, 2012
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endo, Masaru Sasago
  • Patent number: 8084193
    Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer.
    Type: Grant
    Filed: July 12, 2008
    Date of Patent: December 27, 2011
    Assignee: International Business Machines Corporation
    Inventors: Joy Cheng, Dario L Goldfarb, David R Medeiros, Daniel P Sanders, Dirk Pfeifer, Libor Vylicky