Processing Feature Prior To Imaging Patents (Class 430/327)
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Patent number: 8241841Abstract: The present invention provides a process for producing a surface-modified layer system comprising a substrate (2) and a self-assembled monolayer (SAM) (1) anchored to its surface. The SAM (1) is comprised by aryl or rigid alicyclic moiety species. The process comprises providing a polymorphic SAM (1) anchored to the substrate (2), and thermally treating (4) the SAM to change from a first to a second structural form thereof. The invention also provides a thermolithographic form of process in which the thermal treatment (4) is used to transfer a pattern (3) to the SAM (1), which is then developed.Type: GrantFiled: March 24, 2005Date of Patent: August 14, 2012Assignee: The University Court of the University of St. AndrewsInventors: Manfred Buck, Piotr Cyganik
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Patent number: 8211619Abstract: The present invention provides: a positive photosensitive composition that yields an insulation layer superior not only in high transparency, but also in heat resistance enduring a temperature during the production of a substrate, solvent resistance, and anti-aging property as a permanent resist; a positive permanent resist utilizing the positive photosensitive composition; and a method for producing the positive permanent resist. The present invention provides: a positive photosensitive composition containing (A) a curable silicone resin having a silanol group, which resin has a structure obtained by a reaction between one or more cyclic siloxane compounds represented by the following general formula (1): and one or more arylalkoxysilane compounds represented by the following general formula (2): (B) diazonaphthoquinones, and (C) a solvent; a positive permanent resist using the positive photosensitive composition; and a method for producing the positive permanent resist.Type: GrantFiled: November 12, 2008Date of Patent: July 3, 2012Assignee: Adeka CorporationInventors: Hiroshi Morita, Hiromi Sato, Atsushi Kobayashi, Jinichi Omi, Seiichi Saito
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Patent number: 8206893Abstract: Novel, developer-soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a multi-functional acid reacted with a multi-functional vinyl ether to form a branched polymer or oligomer. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light and post-exposure baking, the cured polymers/oligomers will decrosslink and depolymerize, rendering the layer soluble in typical photoresist developing solutions (e.g., alkaline developers).Type: GrantFiled: October 30, 2008Date of Patent: June 26, 2012Assignee: Brewer Science Inc.Inventors: Hao Xu, Ramil-Marcelo L. Mercado, Douglas J. Guerrero, Jim D. Meador
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Patent number: 8192922Abstract: A method of optical fabrication comprises coating a substrate with a photocuring material, controlling the application of light to the photocuring material so as to control the intensity and pattern of the light both in-plane and out of plane, and developing the photocuring material.Type: GrantFiled: October 3, 2006Date of Patent: June 5, 2012Assignee: Carnegie Mellon UniversityInventors: Chao-Min Cheng, Bin Li, Philip R. LeDuc
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Patent number: 8163468Abstract: Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.Type: GrantFiled: March 10, 2008Date of Patent: April 24, 2012Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Lijing Gou, Scott E. Sills, Hiroyuki Mori, Paul D. Shirley, Troy V. Gugel, Adam L. Olson
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Patent number: 8133659Abstract: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.Type: GrantFiled: January 29, 2009Date of Patent: March 13, 2012Assignee: Brewer Science Inc.Inventors: Sam X. Sun, Hao Xu, Tony D. Flaim
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Patent number: 8133644Abstract: A method of forming an image having multiple phases is disclosed herein. The method includes forming exposed and unexposed areas, the exposed areas comprising a first polymer network exhibiting first and second phases that are chemically connected and have different refractive indices, the first phase being continuous, and the second phase comprising a plurality of structures dispersed within the first phase, and the unexposed areas comprising a second polymer network comprising third and fourth phases that are chemically connected and have different refractive indices, the third phase being continuous, and the fourth phase comprising a plurality of structures dispersed within the third phase. The first and second polymer networks are chemically connected, and morphology formed by the first and second phases is different than that formed by the third and fourth phases.Type: GrantFiled: October 31, 2007Date of Patent: March 13, 2012Assignee: 3M Innovative Properties CompanyInventors: Mieczyslaw H. Mazurek, Raymond P. Johnston, John E. Potts, Marc D. Radcliffe, Kevin R. Schaffer, Audrey A. Sherman, Wendi J. Winkler
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Patent number: 8129101Abstract: A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.Type: GrantFiled: March 6, 2009Date of Patent: March 6, 2012Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
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Patent number: 8124327Abstract: The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.Type: GrantFiled: June 4, 2010Date of Patent: February 28, 2012Assignee: International Business Machines CorporationInventors: Gregory Breyta, Daniel Paul Sanders, Hoa D. Truong
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Patent number: 8124323Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.Type: GrantFiled: September 25, 2007Date of Patent: February 28, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Tzu Lu, Keui Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu
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Patent number: 8124319Abstract: A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.Type: GrantFiled: April 12, 2010Date of Patent: February 28, 2012Assignee: Nanya Technology Corp.Inventors: Pei-Lin Huang, Chun-Yen Huang, Yi-Ming Wang
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Patent number: 8110336Abstract: A resin comprising a structural unit represented by the formula (I): wherein Q1 and Q2 represent a fluorine atom etc., U represents a C1-C20 divalent hydrocarbon group in which one or more —CH2— may be replaced by —O— etc., X1 represents —O—CO— etc., and A+ represents an organic counter ion.Type: GrantFiled: September 18, 2009Date of Patent: February 7, 2012Assignee: Sumitomo Chemical Company, LimitedInventors: Ichiki Takemoto, Nobuo Ando
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Patent number: 8105738Abstract: Disclosed is a developing method that performs a developing for forming a second resist pattern after forming and exposing a resist film on a surface of a substrate on which a first resist pattern is formed. The method includes a first process for developing the substrate for a first time period t1 in the state where the substrate stops, and a second process for developing the substrate for a second time period while rotating the substrate. The time ratio of first time period and second time period is adjusted so that a critical dimension of the first resist pattern is equal to a first predetermined value, and a total time of first time period and second time period is adjusted so that a critical dimension of the second resist pattern is equal to a second predetermined value.Type: GrantFiled: April 28, 2011Date of Patent: January 31, 2012Assignee: Tokyo Electron LimitedInventor: Kousuke Yoshihara
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Patent number: 8105758Abstract: A maskless lithography system and method to expose a pattern on a wafer by propagating a photon beam through a waveguide on a substrate in a plane parallel to a top surface of the wafer.Type: GrantFiled: July 11, 2007Date of Patent: January 31, 2012Assignee: Massachusetts Institute of TechnologyInventors: Tymon Barwicz, Milos Popovic
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Patent number: 8088565Abstract: An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.Type: GrantFiled: March 29, 2010Date of Patent: January 3, 2012Assignee: Panasonic CorporationInventors: Masayuki Endo, Masaru Sasago
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Patent number: 8084193Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer.Type: GrantFiled: July 12, 2008Date of Patent: December 27, 2011Assignee: International Business Machines CorporationInventors: Joy Cheng, Dario L Goldfarb, David R Medeiros, Daniel P Sanders, Dirk Pfeifer, Libor Vylicky
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Patent number: 8080364Abstract: After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.Type: GrantFiled: March 27, 2009Date of Patent: December 20, 2011Assignee: Panasonic CorporationInventors: Masayuki Endo, Masaru Sasago
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Patent number: 8053174Abstract: In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.Type: GrantFiled: March 8, 2007Date of Patent: November 8, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hideaki Kuwabara
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Patent number: 8048610Abstract: A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.Type: GrantFiled: April 23, 2009Date of Patent: November 1, 2011Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Youichi Ohsawa, Jun Hatakeyama, Seiichiro Tachibana, Takeshi Kinsho
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Patent number: 8048615Abstract: There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).Type: GrantFiled: December 1, 2006Date of Patent: November 1, 2011Assignee: Nissan Chemical Industries, Ltd.Inventors: Satoshi Takei, Yusuke Horiguchi, Keisuke Hashimoto, Makoto Nakajima
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Patent number: 8039201Abstract: The present invention relates to an antireflective composition comprising a polymer, a thermal acid generator and optionally a crosslinking agent, where the polymer comprises at least one hydrophobic unit (1), at least one chromophore unit (2), at least one unit with a crosslinking site (3) and optionally a unit capable of crosslinking the polymer, where, R1 to R8 are independently selected from hydrogen and C1-C4 alkyl, W1 is a fully or partially fluorinated alkylene group, X is selected from F, H and OH; W2 comprises a chromophore group, and W3 Y comprises a crosslinking site. The invention also relates to a process for using the antireflective coating composition.Type: GrantFiled: November 21, 2007Date of Patent: October 18, 2011Assignee: AZ Electronic Materials USA Corp.Inventors: Huirong Yao, Zhong Xiang, Jian Yin, Weihong Liu
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Publication number: 20110189613Abstract: An exposure apparatus forms an immersion area by supplying a liquid onto a part of a substrate, and forms a prescribed pattern on the substrate through the liquid. A spare immersion area, which is capable of holding part of the liquid on the substrate, is formed at the outer circumference of the immersion area. It is possible to prevent the separation of the liquid, which is disposed between a lower surface of a projection optical system and a substrate surface, from the lower surface of the projection optical system in accordance with the relative movement of the projection optical system and the substrate.Type: ApplicationFiled: March 21, 2011Publication date: August 4, 2011Applicant: NIKON CORPORATIONInventors: Motokatsu Imai, Susumu Makinouchi
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Patent number: 7977037Abstract: A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.Type: GrantFiled: August 24, 2006Date of Patent: July 12, 2011Assignee: Micron Technology, Inc.Inventors: Kevin J. Torek, Todd R. Abbott, Sandra L. Tagg, Amy Weatherly
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Patent number: 7968275Abstract: A photoresist composition for immersion lithography and a method of forming a photoresist pattern using the photoresist composition are disclosed. The photoresist composition includes a photosensitive polymer including a cycloaliphatic group blocked with at least two cyclic acetal groups as a side chain, a photoacid generator and an organic solvent. The hydrophobic photoresist composition may be changed into the hydrophilic photoresist composition by an exposure process. Thus, before the exposure process, the photoresist composition may be insoluble in a liquid for the immersion lithography. After the exposure process, an exposure portion of a photoresist film formed using the photoresist composition may be effectively dissolved in a developing solution to form a uniform photoresist pattern.Type: GrantFiled: December 5, 2008Date of Patent: June 28, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Seok Han, Young-Hoon Kim, Hyo-Sun Kim
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Patent number: 7939241Abstract: The present invention relates to a novel (meth)acrylamide compound represented by the general formula (1), a (co)polymer of the (meth)acrylamide compound, and a chemically amplified photosensitive resin composition composed of the polymer and a photoacid generator. In the formula, R1 represents a hydrogen atom or a methyl group; R2 represents an acid-decomposable group; and R3 to R6 independently represent a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms.Type: GrantFiled: May 12, 2006Date of Patent: May 10, 2011Assignee: NEC CorporationInventors: Katsumi Maeda, Kaichirou Nakano
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Patent number: 7932019Abstract: Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.Type: GrantFiled: November 13, 2007Date of Patent: April 26, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Young Yoon, Hyun-Woo Kim, Chan Hwang, Yun-Kyeong Jang
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Publication number: 20110091821Abstract: A resist treatment unit for performing treatment on a resist film which has been formed on a substrate is disclosed. This resist treatment unit includes: a treatment container capable of maintaining a vacuum therein; a mounting table provided in the treatment container for mounting the substrate on which the resist film has been formed thereon; a gas supply part for jetting a mixture gas containing a first gas and a second gas which are chemically inert toward the mounting table at a predetermined flow rate; and an exhaust part capable of exhausting the treatment container to a degree of vacuum at which the mixture gas jetted from the gas supply part at the predetermined flow rate is able to be a molecular beam in the treatment container.Type: ApplicationFiled: June 10, 2009Publication date: April 21, 2011Inventor: Shinji Kobayashi
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Patent number: 7914972Abstract: An exposure method is provided in which a substrate is favorably exposed in a state with a liquid being retained in a desired condition. An upper surface (1A) of a base material (1) that is used as the substrate (P) to be exposed via the liquid has an effective region (4) coated with a photosensitive material (2), and at least part of the surface of the base material (1) is coated with a first material (3) such that the surface of the base material (1) does not come into contact with the liquid on an outside of the effective region (4).Type: GrantFiled: July 20, 2005Date of Patent: March 29, 2011Assignee: Nikon CorporationInventors: Tomoharu Fujiwara, Hiroyuki Nagasaka
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Patent number: 7910291Abstract: A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The immersion lithography process includes forming a photoresist film over an underlying layer of a semiconductor substrate; exposing the photoresist film to light without using an exposure mask; and performing an exposure process using an exposure mask. After exposure using the immersion lithography, a water mark generated from the exposure layer consumes a part of the acid of the exposure layer but the residual acid remains in the exposure layer to prevent generation of pattern defects such as T-top or pattern bridges.Type: GrantFiled: December 29, 2006Date of Patent: March 22, 2011Assignee: Hynix Semiconductor Inc.Inventors: Cheol Kyu Bok, Hyun Sook Jun, Tae Seung Eom
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Patent number: 7892723Abstract: A method for forming a patterned photoresist is provided, which is applicable to a substrate. The method includes: performing an implantation process over the substrate; next, performing a surface treatment process; then, forming a photoresist layer over the substrate; and thereafter, patterning the photoresist layer.Type: GrantFiled: November 14, 2007Date of Patent: February 22, 2011Assignee: United Microelectronics Corp.Inventor: Te-Shao Hsu
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Patent number: 7892722Abstract: A pattern forming method includes (a) a step of forming a resist film on a substrate, (b) a pre-wet step of spreading a pre-wet solution on the resist film and after a fixed time, removing the pre-wet solution, and (c) a step of subjecting the resist film on the substrate to exposure through an immersion liquid.Type: GrantFiled: May 16, 2005Date of Patent: February 22, 2011Assignee: Fujifilm CorporationInventors: Haruki Inabe, Shinichi Kanna, Hiromi Kanda
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Patent number: 7875416Abstract: A liquid-type composition for forming a photosensitive polymer complex and a method of preparing a photosensitive polymer complex containing silver nanoparticles using the same are provided. The composition for forming a photosensitive polymer complex includes a multifunctional epoxy resin, a photoacid generator, an organic solvent and a silver compound, or additionally includes a multifunctional acrylate resin and a photoinitiator, or an additive, e.g., a surfactant or a flow improver. This composition is applied, selectively exposed, and developed, thus preparing a photosensitive polymer complex, which contains silver nanoparticles uniformly dispersed and formed in the polymer pattern portion thereof through photo reduction and is therefore improved in terms of physical or chemical properties, e.g., heat resistance and wear resistance.Type: GrantFiled: June 5, 2007Date of Patent: January 25, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Jin Park, Byung Ha Park, Young Ung Ha
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Patent number: 7871211Abstract: A coating and developing system has a first processing block, a second processing block, and a transfer block interposed between the first and the second processing block. A first direct carrying means carries substrates from a carrier block to the transfer block. The transfer block distributes the substrates to respective film forming unit blocks of the first and the second processing block. Substrates on which films have been formed by the first and the second processing block are collected temporarily in the transfer block. A second direct carrying means carries the substrate collected in the transfer block from the transfer block to an interface block. Use of the first and the second processing block can improve the throughput of the coating and developing system. Since a carrying route from the carrier block to the first processing block, and a carrying route from the carrier block to the second processing block are the same, a carrying program is easy to create.Type: GrantFiled: March 28, 2008Date of Patent: January 18, 2011Assignee: Tokyo Electron LimitedInventors: Nobuaki Matsuoka, Takahiro Hashimoto, Katsuhiro Tsuchiya, Shinichi Hayashi, Yasushi Hayashida
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Patent number: 7871744Abstract: A near-field exposure apparatus includes a near-field exposure mask and a mechanism places a substrate, to be exposed, opposed to the near-field exposure mask. A mechanism performs relative alignment of the near-field exposure mask and the substrate to be exposed. A mechanism closely contacts the near-field exposure mask and the substrate to be exposed, with each other. A mechanism projects exposure light to the near-field exposure mask, and a soft X-ray irradiating device removes static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed such that the near-field exposure mask is located between the soft X-ray irradiating device and the substrate to be exposed.Type: GrantFiled: October 10, 2007Date of Patent: January 18, 2011Assignee: Canon Kabushiki KaishaInventors: Yasuhisa Inao, Toshiki Ito, Natsuhiko Mizutani
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Patent number: 7862987Abstract: An electrical structure and method of forming. The method comprises providing a substrate structure. A first layer comprising a first photosensitive material having a first polarity is formed over and in contact with the substrate structure. A second layer comprising photosensitive material having a second polarity is formed over and in contact with the first layer. The first polarity comprises an opposite polarity as the second polarity. Portions of the first and second layers are simultaneously exposed to a photo exposure light source. The portions of the first and second layers are developed such that structures are formed.Type: GrantFiled: November 20, 2007Date of Patent: January 4, 2011Assignee: International Business Machines CorporationInventors: Timothy Harrison Daubenspeck, Jeffrey Peter Gambino, Christopher David Muzzy, Wolfgang Sauter
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Patent number: 7858288Abstract: A fluorine-containing polymeric compound obtained by polymerizing only polymerizable monomers represented by general formula (c1-0) shown below: wherein R1 represents a hydrogen atom or a methyl group; R2 represents an aliphatic hydrocarbon group substituted with fluorine atoms, or a group in which a plurality of aliphatic hydrocarbon groups which may be substituted with fluorine atoms are bonded through a linking group containing a hetero atom, with the proviso that at least one of the plurality of aliphatic hydrocarbon groups which may be substituted with fluorine atoms is an aliphatic hydrocarbon group substituted with fluorine atoms.Type: GrantFiled: April 24, 2008Date of Patent: December 28, 2010Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventor: Makiko Irie
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Patent number: 7846638Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.Type: GrantFiled: November 2, 2007Date of Patent: December 7, 2010Assignee: Nissan Chemical Industries, Ltd.Inventors: Takahiro Kishioka, Ken-ichi Mizusawa, Tomoyuki Enomoto, Rikimaru Sakamoto, Keisuke Nakayama, Yasuo Kawamura
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Patent number: 7833912Abstract: According to an aspect of the present invention, there is provided a semiconductor device including a semiconductor substrate which includes a number of chip areas, a processed film which is formed on the semiconductor substrate, and a ring-shaped pattern which is formed on the processed film and along a peripheral portion of the semiconductor substrate.Type: GrantFiled: April 27, 2007Date of Patent: November 16, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Takayo Kobayashi, Tomohiro Oki
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Patent number: 7824846Abstract: A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular region having a first outer perimeter proximate to a perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate, the actinic radiation gradually decreasing in intensity from the first outer perimeter to the first inner perimeter; and developing the exposed first annular region of the photoresist layer to form a tapered profile in a second annular region of the photoresist layer, the second annular region having a second perimeter proximate to the perimeter of the substrate and a second inner perimeter away from the substrate perimeter, the profile gradually increasing in thickness from the second outer perimeter to the second inner perimeter.Type: GrantFiled: September 19, 2007Date of Patent: November 2, 2010Assignee: International Business Machines CorporationInventor: Colin J. Brodsky
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Patent number: 7824837Abstract: The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent, and optionally, a photoacid generator and/or an acid and/or a thermal acid generator. The invention further relates to a process for using such a composition.Type: GrantFiled: October 22, 2007Date of Patent: November 2, 2010Assignee: AZ Electronic Materials USA Corp.Inventors: Hengpeng Wu, Mark O. Neisser, Shuji S Ding-Lee, Aritaka Hishida, Joseph E. Oberlander, Medhat E. Toukhy
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Patent number: 7807335Abstract: A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.Type: GrantFiled: June 3, 2005Date of Patent: October 5, 2010Assignee: International Business Machines CorporationInventors: Daniel A. Corliss, Dario Gil, Dario Leonardo Goldfarb, Steven John Holmes, David Vaclav Horak, Kurt Rudolf Kimmel, Karen Elizabeth Petrillo, Dmitriy Shneyder
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Patent number: 7794922Abstract: A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.Type: GrantFiled: May 11, 2006Date of Patent: September 14, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Shinichi Ito, Kentaro Matsunaga, Daisuke Kawamura, Yasunobu Onishi
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Patent number: 7794923Abstract: A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.Type: GrantFiled: January 18, 2007Date of Patent: September 14, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Eishi Shiobara, Kentaro Matsunaga, Daisuke Kawamura, Tomoyuki Takeishi, Kei Hayasaki, Shinichi Ito
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Patent number: 7794924Abstract: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.Type: GrantFiled: September 14, 2007Date of Patent: September 14, 2010Assignee: Tokyo Electron LimitedInventors: Yuko Ono, Junichi Kitano
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Patent number: 7781141Abstract: The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.Type: GrantFiled: July 1, 2005Date of Patent: August 24, 2010Assignee: Rohm and Haas Electronic Materials LLCInventors: Michael K. Gallagher, Gerald B. Wayton, Gregory P. Prokopowicz, Stewart A. Robertson
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Patent number: 7781157Abstract: The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.Type: GrantFiled: July 28, 2006Date of Patent: August 24, 2010Assignee: International Business Machines CorporationInventors: Gregory Breyta, Daniel Paul Sanders, Hoa D. Truong
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Patent number: 7759052Abstract: A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.Type: GrantFiled: June 9, 2008Date of Patent: July 20, 2010Assignee: Hynix Semiconductor Inc.Inventors: Jae Chang Jung, Sung Koo Lee
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Patent number: 7759050Abstract: Provided is a laminated body comprising a substrate to be ground and a support, where the substrate may be ground to a very small (thin) thickness and can then be separated from the support without damaging the substrate. One embodiment is a laminated body comprising a substrate to be ground, a curable silicone adhesive layer in contact with the substrate to be ground, a photothermal conversion layer comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the adhesive layer, the laminated body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.Type: GrantFiled: December 17, 2008Date of Patent: July 20, 2010Assignee: 3M Innovative Properties CompanyInventors: Carl R. Kessel, Larry D. Boardman, Richard J. Webb
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Patent number: 7749689Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.Type: GrantFiled: March 25, 2008Date of Patent: July 6, 2010Assignee: Lam Research CorporationInventors: David Hemker, Fred C. Redeker, John Boyd, John M. de Larios, Michael Ravkin, Mikhail Korolik
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Patent number: 7745093Abstract: In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.Type: GrantFiled: April 8, 2005Date of Patent: June 29, 2010Inventors: Takeshi Nishibe, Sung Eun Hong, Yusuke Takano, Tetsuo Okayasu