Abstract: An intermediate transfer member that is used for electrophotographic image formation, includes carbon nanotubes and ferroelectric fillers in a base material layer containing a resin material as a principal component.

Abstract: There is disclosed a fuser member that includes a substrate layer and a surface layer disposed on the substrate layer. The surface layer includes a fluoropolymer having dispersed therein fluorinated graphene particles. A method of manufacturing a fuser member is also provided.

Abstract: The present teachings provide an intermediate transfer member which includes a substrate layer and a surface layer disposed on the substrate layer. The surface layer includes a plurality of core-shell particles wherein the core is a conductive particle and the shell is a fluoroplastic dispersed in a fluoroelastomer.

Abstract: A rotatable electrical connector has a pair of wiring boards. Each wiring board supports two (or more) concentric conductors that have substantially smooth coplanar surfaces. The coplanar surfaces of the concentric conductors on each wiring board define a contact plane. To provide electrical contact between the two wiring boards, each wiring board is positioned perpendicular to an axis of rotation and is supported so that the respective contact planes of the first and second wiring boards are parallel. A resilient member, such as a spring, urges the wiring boards together to establish electrical contact between the respective surfaces of corresponding conductors on the two wiring boards. The above-described wiring boards are included in a circuit module that also includes a printed circuit board, or other electrical component, sandwiched between a pair of the wiring boards.

Abstract: A rotatable electrical connector has a pair of wiring boards. Each wiring board supports two (or more) concentric conductors that have substantially smooth coplanar surfaces. The coplanar surfaces of the concentric conductors on each wiring board define a contact plane. To provide electrical contact between the two wiring boards, each wiring board is positioned perpendicular to an axis of rotation and is supported so that the respective contact planes of the first and second wiring boards are parallel. A resilient member, such as a spring, urges the wiring boards together to establish electrical contact between the respective surfaces of corresponding conductors on the two wiring boards. The above-described wiring boards are included in a circuit module that also includes a printed circuit board, or other electrical component, sandwiched between a pair of the wiring boards.

Abstract: A method for producing a multilayer plate for X-ray imaging is disclosed. As the first step in the method, there is provided a plate of a substrate. Then, there is deposited on this substrate a thin film of amorphous arsenic triselenide by thermal evaporation under reduced pressure, followed by condensation on the substrate. A thick photoconductive film of doped amorphous selenium is then deposited by evaporation and condensation on the thin layer of amorphous arsenic triselenide. This thick photoconductive film can also be deposited directly onto the substrate. Then, a thin film of alkali doped selenium is deposited onto the thick photoconductive layer by evaporation or co-evaporation and condensation, and a conducting biasing electrode is formed on top of this alkali doped film.

Abstract: There is disclosed a photoconductor for use in an electrophotographic apparatus. The photoconductor includes a conductive substrate and a photoconductive layer formed on the conductive substrate. The photoconductive layer includes an As.sub.2 Se.sub.3 alloy containing 36% to 40% by weight of As and doped with 1,000 to 20,000 parts per million of iodine. A method of manufacturing a photoconductor is also disclosed, which includes forming a photoconductive layer by vapor deposition on a conductive substrate and thermally treating the photoconductive layer at a temperature between 100 and 200 degrees Celsius for a period between 30 and 80 minutes. Advantageously, the photoconductor of the present invention is able to provide high quality images at high printing speeds.

Abstract: A first selenium-arsenic layer of a photoconductor, deposited on a conductive substrate, has a thickness and arsenic concentration effective to preserve an electrically charged surface potential in darkness and to transport carriers generated on exposure to light. The first layer is between 20 to 70 .mu.m thick. A second amorphous selenium-arsenic alloy layer, formed on the first layer, generates carriers on exposure to light. The surface roughness, Rmax., of the conductive substrate is less than or equal to 0.5 .mu.m. The first layer, or both of the photoconductive layers, are doped with iodine. When both layers contain iodine, the iodine content of the second layer is equal to or less than that of the first layer. The thickness of the second layer is between 5 to 30 .mu.m. The arsenic content of the amorphous selenium-arsenic alloy of the second layer is equal to or greater than that in the first layer. After deposition of the first and second layers, the photoconductor is heat treated at between 100.

Abstract: A photosensitive material for use in electric photography, which comprises in sequence a conductive substrate; a carrier transport layer consisting of a selenium/arsenic alloy; a carrier generation layer consisting of a selenium/tellurium alloy; and an overcoat layer consisting of a selenium/arsenic alloy; wherein carrier injection preventive layers consisting of a selenium/arsenic/sulfur alloy are inserted between the conductive substrate and the carrier transport layer, and between the carrier generation layer and the overcoat layer, or between the carrier generation layer and the overcoat layer, or between both.

Abstract: Disclosed is a process which comprises providing an alloy of selenium, preparing powdered particles of the alloy with an average particle diameter of less than 300 microns, placing the powdered particles into a container and tumbling the container, and subsequently removing the powdered particles from the container and compressing the powdered particles into pellets.

Abstract: New inverse multiactive electrophotographic elements comprise, in order:an electrically conductive layer;a charge-transport layer;a first charge-generation layer containing a charge-generation material and a charge-transport material; anda second charge-generation layer containing a charge-generation material and a charge-transport material different from and less susceptible to positive-surface-charge injection than the charge-transport material of the first charge-generation layer.

Abstract: The disclosed substance has a general chemical formula of Y.sub.3-x --Ba.sub.x Cu.sub.y --O.sub.z, x being 0 to 1, y being 3 to 6, and z being 6 to 12. At a temperature below 90.degree.-95.degree. K., the disclosed substance shows superconductive photoconductivity or even both superconductivity, either real or potential, and photoconductivity in response to incident exciting light in a wavelength range of 420 to 640 nm. The substance is produced by heating a mixture of starting material therefor at 750.degree.-1,050.degree. C. for 1-10 hours so as to cause solid phase reaction, cooling gradually, shaping under pressure, sintering at 670.degree.-1,050.degree. C., and cooling either quickly at a rate of 2,000.degree.-900.degree. C./sec or slowly at a rate of 150.degree.-200.degree. C./hour.

Abstract: A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

Abstract: An electrophotographic photoreceptor is disclosed, which comprises an electrically conductive substrate having thereon a photosensitive layer comprising a resin binder in which the following two kinds of charge generating materials are dispersed: (i) selenium or an alloy of selenium and (ii) a phthalocyanine derivative represented by the formula: ##STR1## wherein M represents AlCl, Mg, VO, InCl or H.sub.2. The electrophotographic photoreceptor exhibits a broad spectral sensitivity extending from the visible to the infrared regions of the spectrum and, therefore, can be suited for printers which utilize such light sources as semiconductor lasers, light emitting diodes, etc.

Abstract: A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

Abstract: A photosensitive member for electrophotography which comprises a conductive substrate and a photoconductive layer which is composed of an amorphous silicon layer and an amorphous silicon germanium layer containing a specific amount of hydrogen and/or halogen respectively, and being prepared by electron cyclotron resonance method respectively, which is useful for xerographic systems.

Abstract: A photosensitive material for use in electronic photography having a photosensitive layer principally comprises an amorphous selenium-arsenic alloy, the alloy having present therein crystalline arsenic trioxide in the form of arsenolite and claudetite. The charging ability of the photosensitive material is improved by controlling the ratio of relative absorbance peak intensity in the infrared spectrum of arsenolite to claudetite to be at least 0.5.

Abstract: An amorphous silicon function separation type electrophotographic photoreceptor is disclosed having thin layers, wherein an intermediate layer provides the photoreceptor with high surface potential and low residual potential for positive and negative charging. The intermediate layer lies between a large band gap a-Si alloy transport layer and an a-Si:H photosensitive layer.

Abstract: Compounds having the formula (MX.sub.3).sub.n M'X.sub.4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorous, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula YJX.sub.

Abstract: A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer.

Abstract: A layered photoresponsive imaging member comprised of a supporting substrate; an amorphous photoconductive layer and a hole transport layer dispersed in a resinous binder, which layer is formulated from a solution mixture; and wherein the photoconductive layer is prepared by a process which comprises dissolving an inorganic photoconductive component in a solvent, removing the suspended particles therefrom, depositing the resulting solution on the supporting substrate, and subsequently heating the aforementioned member.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: An electrophotographic imaging member comprising providing a conductive substrate, an alloy layer comprising selenium doped with arsenic having a thickness of between about 100 micrometers and about 400 micrometers, the alloy layer comprising between about 0.3 percent and about 2 percent by weight arsenic at the surface of the alloy layer facing away from the conductive substrate and comprising crystalline selenium having a thickness of from about 0.01 micrometer to about 1 micrometer contiguous to the conductive substrate, and a thin protective overcoating layer on the alloy layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine. This photoreceptor is prepared by providing a conductive substrate, cleaning the substrate, heating an alloy comprising selenium and from about 0.

Abstract: A planar electrophotographic imaging member comprising a magnetically attractable, electrically conductive layer, a thin aluminum layer, an aluminum oxide blocking layer and at least one x-ray photoconductive selenium alloy insulating layer. This planar electrophotographic imaging member may be fabricated by providing a planar substrate comprising a magnetically attractible, electrically conductive layer and a thin aluminum layer bearing an aluminum oxide blocking layer, mounting the substrate on a magnetic support member, the blocking layer facing away from the magnetic support member, and applying at least one x-ray photoconductive insulating layer to the blocking layer. The planar electrophotographic imaging member may be overcoated while the substrate remains mounted on the magnetic support member.

Abstract: An imaging member comprised of a supporting substrate, a barrier layer of hydrogenated amorphous silicon nitride with dopants, a hydrogenated amorphous silicon photoconducting layer, and in contact therewith a top overcoating layer of nonstoichiometric silicon nitride.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: An imaging member comprised of a supporting substrate, a p,n multijunction photogenerating layer comprised of from about 8 to about 100 alternating layers of components selected from the group consisting of hydrogenated amorphous silicon, hydrogenated amorphous germanium, and alloys of hydrogenated amorphous silicon and hydrogenated amorphous germanium; and a charge transporting layer.

Abstract: An electrophotographic recording material, composed of an electrically conductive substrate; a first layer provided on the electrically conductive substrate and composed of an amorphous selenium-tellurium alloy containing form 0.05 to 15 weight % tellurium; a second layer disposed on the first layer and composed of an amorphous selenium-tellurium alloy containing from 15 to 60 weight % tellurium; and a third layer provided on the second layer and composed of an amorphous alloy of selenium and from 0.05 to 5 weight % of one arsenic or tellurium. The electrophotographic recording material is particularly useful in an electrophotographic recording system which includes an infrared radiation means, such as an infrared solid state laser.

Abstract: A composite photosensitive element for use in electrophotography which comprises an electrically conductive substrate and a first photoconductive layer and second photoconductive layer laminated on said substrate in the order named, said first photoconductive layer being a Se-As vapordeposited layer or a Se-Te-As vapordeposited layer, said second photoconductive layer being a multilayer type one comprising a charge transport layer and a charge carrier generating layer consisting essentially of azo pigment in the order named from the surface and a process of forming images using same.

Abstract: Disclosed is an improved process for the preparation of a stable colloidal dispersion of a selenium tellurium alloy, which comprises providing a solution with a polymer therein; adding to the solution a selenium ester and a tellurium ester; and subsequently subjecting the resulting mixture to a reduction reaction by adding thereto a reducing agent whereby there is generated selenium tellurium particles of a diameter of from about 0.01 micron to about 0.3 micron in solution.

Abstract: The electrophotographic element comprising mounting on an electrically conductive substrate a Se-Te-Cl alloy system photoconductive layer which contains Te in the range of 6 to 12 wt. % of Se, Cl in the range of 10 to 30 ppm of the total amount of Se and Te and O.sub.2 as impurity 10 ppm or less of the whole alloy, is superior especially in temperature and light fatigue characteristics.

Abstract: A vapor-deposited film of selenium or selenium alloy as a photoreceptor for electrophotography comprises selenium or a selenium alloy and phosphorus contained therein in an amount of not less the 0.5 ppm and adjusted to attain a desired contrast potential. The selenium alloy is selected from Se-Te, Se-As, Se-Bi, and Se-Sb alloys. The film is produced either by adding phosphorus to stock selenium or selenium alloy and then vacuum-depositing the phosphorus-containing selenium or selenium alloy or by simultaneously vapor-depositing selenium or selenium alloy and elemental phosphorus or a phosphorus compound.

Abstract: An electrophotographic imaging member is described comprising a substrate, a layer comprising an amorphous hole injecting material selected from the group consisting of halogen doped selenium, gold, silver, platinum and carbon black, the halogen doped selenium consisting essentially of selenium and between about 200 parts per million and about 2,000 parts per million by weight halogen, and at least one thermal hole generating selenium alloy photoconductive layer. This electrophotographic imaging member may contain other layers such as a hole transport layer, a layer between the hole transport layer and thermal hole generating selenium alloy photoconductive layer, and a thin protective overcoating layer suitable for Carlson type imaging processes. An electrophotographic imaging process employing this electrophotographic imaging member is also described.

Abstract: An electrophotographic imaging member is described comprising a substrate, a charge transport layer, a thin continuous interface layer consisting essentially of halogen doped selenium, and at least one selenium-tellurium alloy photoconductive charge generating layer. This electrophotographic imaging member may contain other layers such as a thin protective overcoating layer suitable for Carlson type imaging processes. An electrophotographic imaging process employing this electrophotographic imaging member is also described.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys and devices. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous devices containing silicone and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, said first and second layer regions being provided successively from the side of said support.

Abstract: The recording material comprises a metallic base, for example, of aluminum, a twenty to sixty .mu.m thick layer of selenium with a content of tellurium ranging between 5 and 30 percent by wt. and a layer of selenium having a thickness ranging between 0.5 and 3 .mu.m arranged thereon containing 0.5 to 5 percent by wt. of arsenic. Instead of the layer of selenium containing arsenic, there may also be provided a layer of arsenic-triselenside. Preferably, the content of tellurium in the selenium layer containing tellurium, increases either step-by-step or continuously from the metallic base up to the layer of selenium containing arsenic. The electrophotographic recording material has a sensitivity within the region from 600 to 850 nanometers, the surface is stabilized against corona effects, and the material has a good residual potential behavior.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms of an element belonging to the group III of the periodic table as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness, said first layer region existing internally below the surface of said amorphous layer.

Abstract: The metal substrate of an electrophotographic member is provided with a selenium-tellurium alloy layer containing 5-30% tellurium, 10-5,000 ppm of a metallic element of the fifth main group, and 10-100 ppm of a halogen. A preferred embodiment contains 15% tellurium, 40 ppm arsenic, and 40 ppm chlorine. The addition of the metallic element of the fifth main group to the selenium-tellurium alloy results in a stabilization of charging potentials in multicycle operation.If the metal substrate is an aluminum drum, the electrophotographic member can be used as a copying drum in high-speed copiers.

Abstract: A process for preparing a selenium alloy highly resistant to the development of persistant bulk space charge during prolonged, electrophotographic cycling comprising heating a mixture comprising selenium, arsenic and chlorine to a temperature between about 290.degree. C. and about 330.degree. C. to form a molten mixture, agitating the molten mixture to blend the components therein, discontinuing or substantially discontinuing all agitation of the mixture to achieve a quiescent state for the mixture, raising the temperature of the mixture to at least about 420.degree. C. for at least about 30 minutes and cooling the mixture until it becomes a solid.

Abstract: This invention is generally directed to an inorganic overcoated photoresponsive device comprised of a substrate, a layer of electron trapping material, this layer being comprised of halogen doped selenium, halogen doped arsenic selenium alloys, and mixtures thereof; a hole transport layer in operative contact with the electron trapping layer, this layer being comprised of a halogen doped selenium arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.

Abstract: This invention is directed generally to a layered inorganic photoresponsive device, this device being comprised of a substrate, or supporting base, containing on its surface a layer of hole injecting material comprised of gold, a hole transport layer in operative contact with the hole injecting layer, the transport layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage of selenium present is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present is from about 0.5 percent to 0.1 percent, the percentage of halogen present ranges from about 10 parts per million to 200 parts per million, followed by a charge generating material overcoated on the transport layer, this material being comprised of inorganic photoconductive substances, and as an optional layer a layer of insulating organic resin overlaying the charge generating layer. The transport and generating layers can also be comprised of one composite layer.

Abstract: An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, the photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in the photosensitive layer, with the concentration of tellurium substantially uniform or increasing in the direction toward the surface of the photosensitive layer and the ratio of the concentration of tellurium near the electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 or more:100.

Abstract: An electrophotographic plate comprising a conductive substrate, a photoconductive-insulative layer overlaying the substrate and a transparent, electrically active, organic, electron transport layer overlaying the photoconductive-insulative layer in which the photoconductive layer comprises a Se--Te or Se--As mixture in the range of 90-97.5 atomic percent Se or 60-97.5 atomic percent, respectively, and wherein the thicknesses of the photoconductive layer and transport overlayer range between 40 to 100 micrometers and 1 to 5 micrometers, respectively.

Abstract: An imaging member comprising a charge generation layer comprising a layer of photoconductive material and a contiguous charge transport layer of a charge transport material dissolved in a polymer of the following structure: ##STR1## wherein R', R", R'" and R"" are independently selected from the group consisting of alkyl and alkylene groups having from 1 to 12 carbon atoms, there being no more than 1 alkylene group present, x is from 4 to 5, y is from 0 to 1, n is a whole number and said polymer has a molecular weight ranging from about 1500 to about 120,000, said transport layer being substantially nonabsorbing in the spectral region at which the photoconductive layer generates and injects photogenerated holes, but is capable of supporting the injection of photogenerated holes from said photoconductive layer and transporting said holes through said charge transport layer.

Abstract: An electrophotographic photosensitive member having an amorphous deposition layer as a photoconductive layer, in which the amorphous deposition layer is formed by gradual increase in a substrate temperature during deposition of the photoconductive material.

Abstract: A photoreceptor of electrophotography having a flexibility and a sensitivity to electromagnetic wavelengths of a wide range extending as far as the red color region of the spectrum of light rays is produced by forming a layer of a halogen-doped Se-S alloy on a substrate and further forming on said layer a halogen-doped Se-Te alloy layer. The Se-S alloy contains sulfur in a weight ratio of 0.1 to 0.35 to the Se-S alloy. The Se-Te alloy contains tellurium in a weight ratio of 0.05 to 0.35 to the Se-Te alloy.

Abstract: A photosensitive material for electrophotography is provided, which comprises in sequence an electroconductive substrate, a carrier transport layer composed of a selenium-arsenic alloy, a carrier generation layer composed of a selenium-tellurium alloy and a surface coating layer composed of a selenium-arsenic alloy. The present invention further relates to a photosensitive material having a carrier transport layer that is doped with iodine as well.