Abstract: A selenium photoconductor has a charge transport layer and a charge generation layer formed on a conductive substrate. Both the charge generation layer and the charge transport layer are made from a selenium-arsenic alloy, with the charge generation layer having a concentration of arsenic greater than the concentration of arsenic in the charge transport layer. This concentration distribution results in a photoconductor having excellent charge-generation efficiency and mobility. In an alternate embodiment, a halogen is doped into the charge generation layer and charge transport layer. The resulting photoconductor is useful in large-scale, high speed printing operations.

Abstract: A method for producing a multilayer plate for X-ray imaging is disclosed. As the first step in the method, there is provided a plate of a substrate. Then, there is deposited on this substrate a thin film of amorphous arsenic triselenide by thermal evaporation under reduced pressure, followed by condensation on the substrate. A thick photoconductive film of doped amorphous selenium is then deposited by evaporation and condensation on the thin layer of amorphous arsenic triselenide. This thick photoconductive film can also be deposited directly onto the substrate. Then, a thin film of alkali doped selenium is deposited onto the thick photoconductive layer by evaporation or co-evaporation and condensation, and a conducting biasing electrode is formed on top of this alkali doped film.

Abstract: A photosensitive material for use in electric photography, which comprises in sequence a conductive substrate; a carrier transport layer consisting of a selenium/arsenic alloy; a carrier generation layer consisting of a selenium/tellurium alloy; and an overcoat layer consisting of a selenium/arsenic alloy; wherein carrier injection preventive layers consisting of a selenium/arsenic/sulfur alloy are inserted between the conductive substrate and the carrier transport layer, and between the carrier generation layer and the overcoat layer, or between the carrier generation layer and the overcoat layer, or between both.

Abstract: A method for vacuum depositing a selenium-arsenic coating on a substrate to form a photoreceptor by evaporating selenium with an arsenic concentration of 0.1 to 0.6 percent by weight and discontinuing the evaporation when the weight of the selenium alloy remaining is 2-10 percent of the original weight.

Abstract: A selenium alloy electrophotographic imaging member having an optically transparent NESA coated substrate. An x-ray image is formed from the side of the photoreceptor opposite the transparent substrate and then is scanned from the back side through the transparent substrate with a fine beam of light, the position of which is precisely monitored. The ensuing discharge from the light beam is detected by a non-contacting x-ray transparent electrode located on the outer side of the photoreceptor, away from the substrate, which reads the discharge signal through capacitive coupling, pixel by pixel, according to the position of the light beam, to form a high resolution raster pattern digital readout of the image.

Abstract: An electrophotographic photoreceptor is disclosed, comprising an electroconductive support having a light-sensitive layer containing a charge generating substance and a charge transporting substance, wherein said charge transporting substance is a 1,4-benzodithiafulvene derivative represented by formula (I): ##STR1## wherein R.sup.1 represents a lower alkyl group, a benzyl group, a naphthyl group, or a phenyl group which may contain a substituent; R.sup.2 represents a phenyl group which may contain a substituent or an N-alkyl-substituted carbazole group; R.sup.3 represents a hydrogen atom or a phenyl group which may contain a substituent; R.sup.4 represents a hydrogen atom, a lower alkyl group, a hydroxyl group, or an alkoxy group or an aryloxy group represented by OR.sup.5 ; R.sup.5 represents a lower alkyl group, a benzyl group, or a phenyl group which may contain a substituent; and n represents an integer of 0 or 1.

Abstract: Disclosed is a process which comprises providing an alloy of selenium, preparing powdered particles of the alloy with an average particle diameter of less than 300 microns, placing the powdered particles into a container and tumbling the container, and subsequently removing the powdered particles from the container and compressing the powdered particles into pellets.

Abstract: The a-selenium-tellurium photosensitive member according to the present invention comprises an electric charge injection preventive layer, an a-selenium-tellurium mixed vacuum evaporation layer of 0.03-0.2 .mu.m thick having tellurium concentration within the range of 20-50 wt % with uniform concentration on the deposited surface, and an electric charge transport layer, and these three layers are sequentially laminated on a transparent electrode layer. Thus, a-selenium-tellurium layer is formed in thin film, and thermal excitation carrier and injection carrier can be reduced to very low level even when tellurium concentration is increased. The increase of dark current is not very high. Panchromatic property can be provided in visible light region, and the sensitivity can be improved even in short wavelength region.

Abstract: An electrophotographic image-forming member which comprises a substrate for electrophotography and a light receiving layer being disposed on said substrate, said light receiving layer comprising a photoconductive layer formed of a non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared adsorption spectrum.The light receiving layer may further comprise a charge injection inhibition layer or/and a surface layer.

Abstract: An electrophotographic photoreceptor having a light-sensitive layer formed on an electrically conductive substrate is disclosed, which contains at least a layer chiefly made of a germanium-containing amorphous carbon as a light-sensitive layer or an anti-reflection layer.

Abstract: An electrophotogrpahic printer having a photoconductor with an As.sub.2-x Se.sub.3+x (0<x<0.5) overcoat layer and a carrier generation layer comprising a Se-Te alloy containing about 42% by weight of tellurium is provided in which the charge-removing light has a wavelength shorter then 680 nm, and the time interval between the removal of charge and the re-electrification is in excess of 400 msec, thus minimizing the potential drop at the surface of the photoconductor.

Abstract: The present invention provides a seleniumn electrophotographic photoreceptor comprising a laminate of a conductive base, a carrier transportaion layer consisting of amorphous selenium or an amorphous Se-Te alloy, a carrier generation layer consisting of an amorphous Se-Te alloy containing 20 to 50 wt % of Te, and an overcoat layer composed of two layers consisting of Se-As alloys having different arsenic concentrations and different thickenesses. In one embodiment of the invention, the lower overcoat layer contains 2-10% by weight arsenic while the upper overcoat layer contains 10-30% by weight arsenic. In another embodiment of the invention, the thickness of the upper overcoat layer is greater than that of the lower overcoat layer but not more than 8 .mu.m.

Abstract: An electrophotographic photoreceptor is disclosed, which comprises an electrically conductive substrate having thereon a photosensitive layer comprising a resin binder in which the following two kinds of charge generating materials are dispersed: (i) selenium or an alloy of selenium and (ii) a phthalocyanine derivative represented by the formula: ##STR1## wherein M represents AlCl, Mg, VO, InCl or H.sub.2. The electrophotographic photoreceptor exhibits a broad spectral sensitivity extending from the visible to the infrared regions of the spectrum and, therefore, can be suited for printers which utilize such light sources as semiconductor lasers, light emitting diodes, etc.

Abstract: An electrophotographic photoreceptor is provided comprising, in sequence:a) a conductive base;b) a carrier transport layer;c) a carrier generation layer comprising a selenium alloy;d) a carrier injection regulating layer having a band gap energy greater than that of the carrier generation layer and comprising selenium and up to about 10 weight % arsenic;e) a thermal expansion relieving layer comprising aresenic and selenium; andf) a surface protective layer comprising arsenic and selenium in an atomic ratio of approximately 2 to 3;wherein the arsenic concentration in the thermal expansion relieving layer gradually increases from a concentration substantially equal to that of the carrier injection regulating layer on a face of the thermal expansion relieving layer adjacent to the carrier injection regulating layer to a concentration substantially equal to that of the surface protective layer on an opposite face of the thermal expansion relieving layer adjacent to the surface protective layer.

Abstract: The present invention relates to a semiconductor element and a method of forming the same and various kinds of article in which said element is used.Any material selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and SiF.sub.4, and GeH.sub.4 or GeF.sub.4, are used as raw material gases. H.sub.2 is used as a diluent gas if necessary. A photochemical gas phase vapor deposition method is used, at a pressure of 0.1 to 20 Torr, an optical intensity of 10 to 1,000 mW/cm.sup.2, and a substrate temperature of 50.degree. to 250.degree. C. A semiconductor element formed of a -SiGe:H film having superior photoelectric conductivity, a method of forming a semiconductor element film containing Ge added thereto and having high long wave length-sensitivity and superior film quality can be provided.

Abstract: A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

Abstract: A photosensitive member for electrophotography which comprises a conductive substrate and a photoconductive layer which is composed of an amorphous silicon layer and an amorphous silicon germanium layer containing a specific amount of hydrogen and/or halogen respectively, and being prepared by electron cyclotron resonance method respectively, which is useful for xerographic systems.

Abstract: A photosensitive member for electrophotography which comprises a conductive substrate and a photoconductive layer, the photoconductive layer being an amorphous silicon germanium containing hydrogen and/or a halogen at a specific amount, deposited by electron cyclotron resonance method, which is useful for image formation apparatus such as a laser printer.

Abstract: An improved electrophotographic photoreceptor of a function separation type for long wavelength light is provided which comprises an As.sub.2 Se.sub.3 carrier transport layer, a 30 to 50 wt % Te-Se alloy carrier generation layer and an As.sub.2 Se.sub.3 surface protective layer and an outer layer of a transparent insulating material.

Abstract: An electrophotographic photoreceptor comprising a support, a charge blocking layer, a first photoconductive layer composed of at least amorphous silicon, a second photoconductive layer composed of at least boron-containing amorphous silicon, a surface layer composed of at least nitrogenated amorphous silicon, the surface layer having an interface for contacting the second photoconductive layer, the surface layer including a lower region corresponding to an area not greater than approximately 100 .ANG. away from the interface, the lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, the nitrogen ratio of the lower region and the boron content of the second photoconductive layer corresponding to the relation B.gtoreq.10.sup.(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.

Abstract: There is provided an improved light receiving member comprising a substrate and a light receiving layer formed by laminating a first layer having photoconductivity which is constituted with an amorphous material containing silicon atoms as the main constituent atoms and germanium atoms, and a second layer constituted with an amorphous material containing silicon atoms, carbon atoms and an element for controlling the conductivity. The germanium atoms contained in the first layer is in the state of being unevenly distributed in the entire layer region or in the partial layer region adjacent to the substrate. The first layer may contain one or more kinds selected from an element for controlling the conductivity, oxygen atoms and nitrogen atoms in the entire layer region or in the partial layer region.

Abstract: Compounds having the formula (MX.sub.3).sub.n M'X.sub.4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorous, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula YJX.sub.

Abstract: An improved photosensitive member for use in electrophotography which is characterized by having a substrate and a photoconductive layer comprising a carbonic film, the nucleus of which matrix being carbon atom, which contains 30 atomic % or less of hydrogen atom and at least one selected from the elements of Group III and Group V of the Periodic Table, and which has an optical band gap of more than 1.5 eV and an electrical conductivity of 10.sup.-11 .OMEGA..sup.-1 cm.sup.-1 or less.It is always and substantially stable regardless of the changes in use environments and it enables to make highly resolved images with a clear half-tone which are highly dense and quality at high speed.

Abstract: A Photosensitive member of the present invention comprises an electrically conductive substrate, a photoconductive layer and an overcoat layer.The photoconductive layer comprises selenium-arsenic alloy layer, or selenium layer and selenium-tellurium layer formed in this order. The overcoat layer comprises amorphous carbon containing hydrogen and contains elements in Group V of the periodic table.The overcoat layer may contain at least one or more elements selected from the group consisting of oxygen, nitrogen, chalcogen, halogen and elements in Group III and IV of the periodic table in addition to elements in Group V of the periodic table.The photosensitive member of this construction is harmless and excellent in electrophotographic characteristics inclusive of durability and surface hardness.

Abstract: A photosensitive member of the present invention comprises an electrically conductive substrate, a photoconductive layer and an overcoat layer.The photoconductive layer comprises selenium-arsenic alloy layer, or selenium layer and selenium-tellurium layer formed in this order. The overcoat layer comprises amorphous carbon containing hydrogen and contains at least one or more elements selected from the group consisting of chalcogen and elements in Group III and IV of the periodic table.The photosensitive member of this construction is harmless and excellent in electrophotographic characteristics inclusive of durability and surface hardness.

Abstract: The present invention provides a photosensitive body of Se-based function separation type to be used in electrophotographic equipment which employs long wavelength light for writing. Such a body exhibits outstanding abrasion resistance and heat resistance without sacrificing good electrical properties. This is accomplished by interposing an intermediate layer of As-Se alloy between the surface protective layer and the chargeable layer. The intermediate layer contains As in an increasing concentration gradient across the section of the layer from the chargeable layer to the surface protective layer. This graded As concentration causes the coefficient of thermal expansion to gradually decrease across the intermediate layer section in the direction from the chargeable layer to the surface protective layer.

Abstract: A photosensitive material for electrophotography is provided, which comprises in sequence an electroconductive substrate, a carrier transport layer composed of a selenium-arsenic alloy, a carrier generation layer composed of a selenium-tellurium alloy and a surface coating layer composed of a selenium-arsenic alloy. The present invention further relates to a photosensitive material having a carrier transport layer that is doped with iodine as well.

Abstract: A layered photoresponsive imaging member comprised of a supporting substrate; an amorphous photoconductive layer and a hole transport layer dispersed in a resinous binder, which layer is formulated from a solution mixture; and wherein the photoconductive layer is prepared by a process which comprises dissolving an inorganic photoconductive component in a solvent, removing the suspended particles therefrom, depositing the resulting solution on the supporting substrate, and subsequently heating the aforementioned member.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: An electrophotographic image forming member comprises a substrate and a photoconductive layer overlying the substrate and composed of a hydrogenated amorphous silicon containing 0.001-1000 atomic ppm of carbon as an impurity based on silicon.

Abstract: There is provided an improved light receiving member comprising a substrate and a light receiving layer formed by laminating a first layer having photoconductivity which is constituted with an amorphous material containing silicon atoms as the main constituent atoms, and a second layer constituted with an amorphous material containing silicon atoms as the main constituent atoms and carbons atoms, the first layer containing an element for controlling the conductivity in unevenly distributed state, the second layer containing an element for controlling the conductivity in uniformly distributed state. The first layer may contain germanium atoms in an uniformly distributed state in the entire layer region or in the partial layer region adjacent to the substrate.

Abstract: A photoreceptor for electrophotography which comprises an electroconductive substrate and a photoconductive layer formed thereon, said photoconductive layer essentially consisting of a thin film of amorphous silicon alloy containing at least one of hydrogen and fluorine and having the formula: a-Si.sub.1-m X.sub.m :Y wherein X is C, N or O, Y is at least one of H and F and m is a number of not less than zero and less than one, m being gradually decreased from the top surface of the photoconductive layer to the middle part of the photoconductive layer and gradually increased from the middle part of the photoconductive layer to the interface of the photoconductive layer with the electroconductive substrate in the direction of thickness, said photoreceptor having good electric charging property and photoconductivity characteristics.

Abstract: A photosensitive member of the present invention comprises an electrically conductive substrate, a photoconductive layer and an overcoat layer.The photoconductive layer comprises selenium-arsenic alloy layer, or selenium layer and selenium-tellurium layer formed in this order. The overcoat layer comprises amorphous carbon containing hydrogen and contains a kind of atom selected from the group consisting of halogen, oxygen and nitrogen.The photosensitive member of this construction is harmless and excellent in electrophotographic characteristics inclusive of durability and surface hardness.

Abstract: The present invention uses a developing agent with a Vickers hardness of 3 or more for image forming steps. Therefore, the image forming method according to the present invention can prevent a developing agent from adhering to the surface of an image carrier in a short period of time by the repetition of image forming steps.

Abstract: A photoresponsive imaging member comprised of a supporting substrate; a barrier layer of hydrogenated amorphous silicon with dopants therein; a photoconductive layer of hydrogenated amorphous silicon; a first overcoating layer of nonstoichiometric silicon nitride; and a second overcoating layer of a silicone-silica hybrid polymer.

Abstract: The invention disclosed relates to a photosensitive member with an amorphous silicon photoconductive layer. On the photoconductive layer, an insulating layer including amorphous silicon, carbon and oxygen is formed. The amount of carbon is 5 to 65 atomic % and less than 10 atomic % for oxygen if both carbon and oxygen are included uniformly throughout the layer. An amorphous silicon barrier layer containing either oxygen and boron or oxygen and carbon may be formed between the substrate and the photoconductive layer.

Abstract: There is provided a light receiving member which comprises a support and a light receiving layer having a photosensitive layer composed of amorphous material containing silicon atoms and at least either germanium atoms or tin atoms and a surface layer, said surface layer being of multi-layered structure having at least an abrasion-resistant layer at the outermost side and a reflection preventive layer in the inside, and said support having a surface provided with irregularities composed of spherical dimples. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.

Abstract: A process for producing a photoconductive member comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compunds selected from the group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.k (B)wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol.

Abstract: An imaging member comprised of a supporting substrate, a p,n multijunction photogenerating layer comprised of from about 8 to about 100 alternating layers of components selected from the group consisting of hydrogenated amorphous silicon, hydrogenated amorphous germanium, and alloys of hydrogenated amorphous silicon and hydrogenated amorphous germanium; and a charge transporting layer.

Abstract: An arsenic-selenium photoreceptor is provided wherein said photoreceptor is characterized by a gradient concentration of arsenic increasing from the bottom surface to the top surface of the photoreceptor such that the arsenic concentration is about 5 wt. % at a depth of about 5 to 10 microns from the top surface of the photoreceptor and is about 30 to 40 wt. % at the top surface of the photoreceptor.

Abstract: Disclosed for incorporation in imaging members are novel aromatic ether compositions of the formula R--X--R.sub.1, wherein R and R.sub.1 are independently selected from arylamino and substituted arylamino groups, and X is selected from the group consisting of oxygen, sulfur, selenium, and tellurium. Also disclosed are photoresponsive imaging devices containing a photogenerating layer and in contact therewith a hole transport layer comprised of the aromatic ethers illustrated herein.

Abstract: A composite photosensitive element for use in electrophotography which comprises an electrically conductive substrate and a first photoconductive layer and second photoconductive layer laminated on said substrate in the order named, said first photoconductive layer being a Se-As vapordeposited layer or a Se-Te-As vapordeposited layer, said second photoconductive layer being a multilayer type one comprising a charge transport layer and a charge carrier generating layer consisting essentially of azo pigment in the order named from the surface and a process of forming images using same.

Abstract: A photosensitive member which comprises a photoconductive layer and an insulating layer located on the photoconductive layer, the photoconductive layer including amorphous silicon and the insulating layer including amorphous silicon, carbon, oxygen and fluorine. The photoconductive layer has a higher resistivity than the photosensitive member. A barrier layer may be located beneath the photoconductive layer, the barrier layer including either amorphous silicon, oxygen and a Group III impurity or amorphous silicon, carbon and oxygen.

Abstract: An electrophotographic photosensitive member, which is used for electrophotography, has a high dark resistivity and a high durability and achieves high charge acceptability and retentivity, the electrophotographic photosensitive member comprising a substrate, a photoconductive layer, a barrier layer provided between the substrate and the photoconductive layer for substantially inhibiting injection of carriers from the substrate to the photoconductive layer, and a covering layer provided on the photoconductive layer, wherein the layers are formed of amorphous hydrogenated silicon carbide doped with impurities.

Abstract: An electrophotographic imaging member is disclosed consisting essentially of a supporting substrate, a charge transport layer substantially free of arsenic and tellurium and consisting essentially of selenium and a halogen selected from the group consisting of from about 4 parts per million by weight to about 13 parts per million by weight of chlorine and from about 8 parts per million by weight to about 25 parts per million by weight of iodine and a photoconductive charge generator layer comprising selenium, from about 5 percent to about 20 percent by weight tellurium, from about 0.1 percent to about 4 percent by weight arsenic, and a halogen selected from the group consisting of up to about 70 parts per million by weight of chlorine and up to about 140 parts per million by weight of iodine, one surface of the charge generator layer being in operative electrical contact with the charge transport layer and the other surface of the charge generator layer being exposed to the ambient atmosphere.

Abstract: A photosensitive material for use in electrophotography having a chargeability improved by incorporating 1 to 500 ppm As oxide in a Se-As (As: 20 to 40% by weight) system photosensitive layer.

Abstract: A photoconductive member having a substrate for photoconductive member and a light-receiving layer having photoconductivity provided on said substrate is prepared in which the light-receiving layer comprises from the side of said substrate a first layer (I) constituted of an amorphous material containing silicon atoms, a second layer (II) constituted of an amorphous material containing silicon atoms and germanium atoms and a third layer (III) constituted of an amorphous material containing silicon atoms and carbon atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the germanium atoms being distributed non-uniformly in the layer thickness direction in the light receiving layer and nitrogen atoms being contained in the light receiving layer.

Abstract: An electrophotographic imaging member is described comprising a substrate, a charge transport layer, a thin continuous interface layer consisting essentially of halogen doped selenium, and at least one selenium-tellurium alloy photoconductive charge generating layer. This electrophotographic imaging member may contain other layers such as a thin protective overcoating layer suitable for Carlson type imaging processes. An electrophotographic imaging process employing this electrophotographic imaging member is also described.

Abstract: A photosensitive material for electrophotography is provided, which comprises in sequence an electroconductive substrate, a carrier transport layer composed of a selenium-arsenic alloy, a carrier generation layer composed of a selenium-tellurium alloy and a surface coating layer composed of a selenium-arsenic alloy. The present invention further relates to a photosensitive material having a carrier transport layer that is doped with iodine as well.