Abstract: Positive-working imageable elements are prepared by providing a first layer and second layers onto a substrate. Both layers include the same or different radiation absorbing compounds dispersed within different polymeric binders. After both layers are dried, they are heat treated at from about 40 to about 90° C. for at least 4 hours under conditions that inhibit the removal of moisture from the dried first and second layers. This method of preparation provides elements with improved imaging speed and good shelf life.

Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.

Abstract: A resist exposure system and a method of forming a pattern on a resist are provided and include an exposure source, a photoresist composition, and a mask positioned therebetween. The resist composition comprises a first photoresist X and a second photoresist Y. The first photoresist X absorbs at a higher wavelength than the second photoresist Y. The second photoresist Y has a lower glass transitional temperature than the first photoresist X.

Abstract: A positive-working imageable element comprises inner and outer layers and an infrared radiation absorbing compound such as an IR absorbing dye. The inner layer includes a first polymeric material. The ink receptive outer layer includes a second polymeric binder comprising pendant carboxy groups that provides improved chemical resistance to the imageable element and reduced residue from development.

Abstract: A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or —SO2—; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a f

Abstract: A positive type colored photosensitive resin composition containing an alkali-soluble copolymer resin which comprises repeating units derived from styrene and repeating units derived from hydroxystyrene, a ratio (molar ratio) of the latter repeating units to the former repeating units is from 1:0.7 to 1:20 and has a polystyrene-converted weight average molecular weight of 6,000 to 15,000.

Abstract: By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.

Abstract: A positive-working imageable element comprises inner and outer layers and a radiation absorbing compound such as an IR absorbing dye. The inner layer includes a first polymeric material. The ink receptive outer layer includes a second polymeric binder comprising a polymer backbone and an —X—C(?T)—NR—S(?O)2— moiety that is attached to the polymer backbone, wherein —X— is an oxy or —NR?— group, T is O or S, R and R? are independently hydrogen, halo, or an alkyl group having 1 to 6 carbon atoms. After thermal imaging, the element can be developed using an alkaline developer. Use of the particular second polymeric binder reduces sludging in the developer. Its dissolution rate in the developer is slow enough to resist developer attack in the non-imaged areas of the outer layer but rapid enough for the second polymeric binder to be quickly loosened from imaged areas and kept suspended or dissolved for a considerable time.

Abstract: A positive-working resist composition comprising (A1) a resin containing a repeating unit represented by the specific general formula, wherein the resin increases the solubility in an alkali developing solution by the action of an acid.

Abstract: A positive-working imageable element comprises inner and outer layers and a radiation absorbing compound such as an IR absorbing dye. The inner layer includes a polymeric material that is removable using an alkaline developer. An ink receptive outer layer is not removable using an alkaline developer before its exposure to imaging radiation. The outer layer includes a polymer binder having pendant epoxy groups that are substantially unreacted during exposure.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Abstract: The present invention relates to an image forming material having, on a substrate, an image forming layer that includes at least (A) a novolac type phenolic resin containing phenol as a structural unit, (B) a photo-thermal converting agent, and (C) a specific ammonium compound or a specific onium salt.

Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 ?m.

Abstract: An intermediate layer composition having a silicon-containing polymer(A) having a specific structure and a pattern-forming process using the same.

Abstract: A positive resist composition satisfying all of high sensitivity, high resolution, good pattern profile, good line edge roughness and good in-vacuum PED characteristics, is provided, the positive resist composition comprising: (A) a resin containing a repeating unit having a specific styrene skeleton, which is insoluble or hardly soluble in an alkali developer and becomes soluble in an alkali developer under the action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; and (C) an organic basic compound, and a pattern formation method using the positive resist composition.

Abstract: A radiation-sensitive composition includes a radically polymerizable component that comprises carboxy groups, an initiator composition to generate radicals, and a polymeric binder comprising poly(alkylene oxide) segments and optionally pendant cyano groups. This composition can be used to prepare imageable elements such as negative-working, on-press developable printing plate precursors.

Abstract: The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group

Abstract: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R? are as defined in the specification of the invention.

Abstract: A compound including a polymeric chain, an acid labile group attached to the polymeric chain, and at least one hydrophilic group attached to the acid labile group is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.

Abstract: The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Abstract: The present invention provides a positive resist composition comprising (A) at least one resin selected from the group consisting of {circle around (1)} resin which is itself insoluble or poorly soluble in an alkali aqueous solution but cause a chemical change by the action of an acid to become soluble in an alkali aqueous solution with a proviso that the resin is not novolak resin and {circle around (2)} alkali-soluble resin, (B) novolak resin containing protective group which can be dissociated by the action of an acid and (C) an acid generator.

Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C., and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

Abstract: Resist compositions comprising basic compounds having a benzimidazole skeleton and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.

Abstract: Resist compositions comprising basic compounds having an imidazole skeleton and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.

Abstract: The positive type photosensitive composition of the present invention comprises a polymer compound (A) having, in a side chain thereof, a polymerizable group or a cross-linkable group, and an infrared absorbent (B). Preferably, the polymerizable group or cross-linkable group is incorporated into molecules of the polymer compound (A) through a structural unit having this group in a side chain thereof. Specifically, the structural unit is preferably a structural unit having any one of structures represented by the following general formulae (1) to (4): wherein A, B, X each independently represents a single bond, an oxygen atom, a sulfur atom or the like; L and M each independently represent a bivalent organic group; R1 to R12 represents a hydrogen atom or a monovalent organic group; R13 to R24 each independently represents a monovalent organic group; and Y represents an oxygen atom, a sulfur atom, or a phenylene group which may have a substituent.

Abstract: The present invention provides a sulfonate of the formula (I?): wherein Q1, Q2, Q3, Q4 and Q5 each independently represent hydrogen, alkyl having 1 to 16 carbon atoms, alkoxy having 1 to 16 carbon atoms, or electron attractive group, with the proviso that at least one of Q1, Q2, Q3, Q4 and Q5 represents alkyl having 3 to 16 carbon atoms or alkoxy having 3 to 16 carbon atoms, and at least one of Q1, Q2, Q3, Q4 and Q5 is electron attractive group; and A?+ represents a counter ion of the formula (IIa), (IIb), (IIc) or (IId) which are identified in the specification.

Abstract: Novel ester compounds having formula (1) wherein A1 is a polymerizable functional group having a double bond, A2 is furandiyl, tetrahydrofurandiyl or oxanorbornanediyl, R1 and R2 each are a monovalent hydrocarbon group, or R1 and R2 may bond together to form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent hydrocarbon group which may contain a hetero atom are polymerizable into polymers. Resist compositions comprising the polymers are sensitive to high-energy radiation, have an improved sensitivity, resolution, and etching resistance, and lend themselves to micropatterning with electron beams or deep-UV rays.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: The present invention provide a chemically amplified positive resist composition comprising a resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution and becomes soluble in an alkali aqueous solution by the action of an acid; an acid generator; and a compound of the formula (C-1) wherein R1 and R2 each independently represents a hydrogen or an alkyl having 1 to 4 carbon atoms, R3, R4 and R5 each independently represents a hydrogen or a hydroxyl.

Abstract: Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.

Abstract: This invention relates to a photo-polymerization type photosensitive electrode paste composition for a plasma display panel that is capable of preventing a bubble from occurring on an electrode surface during an electrode paste printing process and a damage of an electrode pattern caused by adhesive strength reduction, and a method of fabricating the electrode using the same. A photo-polymerization type photo-sensitive electrode paste composition for a PDP according to the present invention includes a binder polymer for increasing viscosity; at least one of a multi-functional monomer and a multi-functional oligomer that are combined in the shape of chain in reaction to a radical; metal powder; a frit glass for gluing the metal powder; and a photo-initiator and solvent for generating the radical in reaction to a light.

Abstract: A chemically amplified resist composition which comprises a base resin reacting in the presence of an acid, a photo acid generator generating an acid upon exposure, and a compound having the combination of an acetal moiety and a site which is eliminated by an acid in its molecule, or which comprises a base resin, which is a copolymer having the combination of an acetal moiety and a site eliminated by an acid in one repeating unit and reacts in the presence of an acid, and a photo acid generator generating an acid upon exposure.

Abstract: A heat resistant negative working photosensitive composition that comprises (a) one or more polybenzoxazole precursor polymers (I): ?wherein x is an integer from about 10 to about 1000, y is an integer from 0 to about 900 and (x+y) is about less then 1000; Ar1 is a tetravalent aromatic group, a tetravalent heterocyclic group, or mixtures thereof; Ar2 is a divalent aromatic, a divalent heterocyclic, a divalent alicyclic, or a divalent aliphatic group that may contain silicon; Ar3 is a divalent aromatic group, a divalent aliphatic group, a divalent heterocyclic group, or mixtures thereof; Ar4 is Ar1 (OH)2 or Ar2; G is a monovalent organic group a carbonyl, carbonyloxy or sulfonyl group; (b) one or more photo-active compounds which release acid upon irradiation (PAGs); (c) one or more latent crosslinkers each of which contains at least two ˜N—(CH2OR)n units (n=1 or 2, wherein R is a linear or branched C1–C8 alkyl group); (d) at least one solvent, and (e) at least one dissolution rate modifier, with

Abstract: A photoresist contains a polymer that has no silicon-containing groups. Consequently, no expulsion of silicon-containing compounds in gaseous form occurs on exposure to short-wave radiation. The polymer is obtained by terpolymerization of a first comonomer having a group cleavable under acid catalysis, a second comonomer having an anchor group, and a monounsaturated hydrocarbon, in which individual carbon atoms of the carbon skeleton may also be replaced by oxygen, as a third comonomer. The polymer has a low glass transition temperature, and the photoresist therefore has a good layer quality on film formation and good structurability.

Abstract: A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.

Abstract: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

Abstract: There is provided a fluorine-containing copolymer having an aliphatic monocyclic structure in the polymer trunk chain which has a number average molecular weight of from 500 to 1,000,000 and is represented by the formula (Ma): -(M1)-(M2a)-(N)—??(Ma) in which the structural unit M1 is a structural unit derived from an ethylenic monomer having 2 or 3 carbon atoms and at least one fluorine atom, the structural unit M2a is at least one structural unit which introduces an aliphatic monocyclic structure in the polymer trunk chain and is represented by the formula (a): wherein R1 is at least one hydrocarbon group selected from the group consisting of a divalent hydrocarbon group having 1 to 8 carbon atoms and constituting a ring which may be further substituted with a hydrocarbon group or a fluorine-containing alkyl group and a divalent hydrocarbon group having ether bond which has the sum of carbon atoms and oxygen atoms of 2 to 8, constitutes a ring and may be further substituted with a hydrocarbon group o

Abstract: The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.

Abstract: The invention relates to a photoresist composition comprising a polymeric binder; a photoactive component; and at least one dissolution inhibitor comprising a paraffinic or cycloparaffinic compound containing at least one functional group having the structure —C(Rf)(Rf?)OR wherein Rf and Rf? are the same or different fluoroalkyl groups of from one or taken together are (CF2)a wherein a is an integer ranging from 2 to about 10 and R is a hydrogen atom or an acid labile protecting group. Typically, the dissolution inhibitor has an absorption coefficient of less than about 4.0 ?m at a wavelength of 157 nm.

Abstract: A photosensitive conductive composition including a silver powder having an X-ray diffraction pattern in which a half width of a silver (111) peak is at least about 0.15°, an organic binder, a photopolymerizable monomer, a photopolymerization initiator and a lead-free glass.

Abstract: 1. A copolymer having recurring units of the following formulas (1), (2), and (3), wherein R1, R4, R5, and R6 are a hydrogen atom or a methyl group, R2, R3, and R7 represent a monovalent organic group, k is 1 or 2, 1 is 0–4, n is 1–3, m is 0–3, R8 is a substituted methyl group, 1-substituted ethyl group, 1-branched alkyl group, triorganosilyl group, triorganogermyl group, alkoxycarbonyl group, acyl group, or cyclic acid-dissociable group, with two or more R8 groups being the same or different, q is 1–3, and p is 0–3, the copolymer having a GPC average molecular weight of 3,000–100,000. The composition is useful as a polymer component for a radiation-sensitive resin composition suitable as a chemically-amplified resist.

Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.

Abstract: A positive resist composition of the present invention achieving significant performance improvements in high energy-beam lithography, which comprises a phenolic polymer having a property of being insoluble or hardly soluble in an aqueous alkali solution and becoming soluble in an aqueous alkali solution by the action of an acid, in which the phenolic polymer includes a repeating unit containing at least one selected from the group consisting of an acetal-protected phenolic hydroxyl group, a ketal-protected phenolic hydroxyl group, a tertiary ester-protected carboxyl group and a tetrahydropyranyl-protected carboxyl group; and a compound having a phenacylsulfonium structure and capable of generating an acid upon irradiation with one of actinic rays and radiation.

Abstract: A positive resist composition comprising (A) a resin that increases solubility in a developing solution by the action of an acid and comprises (a) a repeating unit containing a group that is decomposed by the action of an acid to become alkali-soluble, (b) a repeating unit containing an alicyclic lactone structure, (c) a repeating unit containing an alicyclic structure substituted with a hydroxy group and (d) a methacrylic acid repeating unit, wherein an amount of the methacrylic acid repeating unit is from 5 to 18% by mole based on the total repeating units of the resin, and (B) a compound that generates an acid upon irradiation of an actinic ray or radiation.

Abstract: In a resist composition comprising a base resin which is a high molecular weight structure free from an aromatic substituent group, a photoacid generator, and a solvent, the photoacid generator is a one capable of generating a perfluoroalkyl ether sulfonic acid. The resist composition has many advantages including excellent resolution, minimized size difference between isolated and densely packed patterns, and minimized line edge roughness.

Abstract: The disclosed invention relates to novel norbornene-type monomers containing pendent lactone or sultone groups. The invention also relates to norbornene-type polymers and copolymers comprising one or more repeating units represented by the formula: and containing pendent lactone or sultone groups. These polymers and copolymers are useful in making photoimagable materials. The photoimagable materials are particularly suitable for use in photoresist compositions useful in 193 and 157 nm photolithography.

Abstract: A chemical amplification type resist composition comprising a specific sulfonyldiazomethane containing long-chain alkoxyl groups has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

Abstract: A laser-engravable flexographic printing element comprising an elastomeric, relief-forming, laser-engravable, thermally and/or photochemically crosslinkable layer comprising, as binder, at least 5% by weight of syndiotactic 1,2-polybutadiene having a content of 1,2-linked butadiene units of from 80 to 100%, a degree of crystallinity of from 5 to 30% and a mean molecular weight of from 20,000 to 300,000 g/mol on a flexible, dimensionally stable support. The elastomeric, relief-forming, laser-engravable layer preferably comprises: (a) from 50 to 99.9% by weight of one or more binders as component A consisting of (a1) from 5 to 100% by weight of syndiotactic 1,2-polybutadiene having a content of 1,2-linked butadiene units of from 80 to 100%, a degree of crystallinity of from 5 to 30% and a mean molecular weight of from 20,000 to 300,000 g/mol as component A1, and (a2) from 0 to 95% by weight of further binders as component A2, (b) from 0.