Abstract: The present invention provides for a photoresist composition comprising a mixture of two different copolymers.

Abstract: A positive resist composition comprises (A) a resin comprising specific repeating units and coming to have enhanced solubility in an alkaline developing solution by the action of an acid and (B) a compound generating an acid by the action of actinic rays or a radiation.

Abstract: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

Abstract: The present invention provides image-forming compositions and photosensitive lithographic plates which are excellent in sensitivity to infrared radiation, latitude of development, treatable area in m2, and printing durability. Specifically, the present invention provides an image-forming composition comprising (A) a polymeric compound obtainable by the addition reaction of a resinous polymer having one or more phenolic hydroxyl groups with a silane coupling agent of the following general formula (1) or (2), (B) an acid generator, (C) an infrared absorber, and (D) an alkali-soluble resin, and a photosensitive lithographic plate having this image-forming composition applied onto a substrate.

Abstract: A positive resist composition comprising (A) a resin that increases solubility in a developing solution by the action of an acid and comprises (a) a repeating unit containing a group that is decomposed by the action of an acid to become alkali-soluble, (b) a repeating unit containing an alicyclic lactone structure, (c) a repeating unit containing an alicyclic structure substituted with a hydroxy group and (d) a methacrylic acid repeating unit, wherein an amount of the methacrylic acid repeating unit is from 5 to 18% by mole based on the total repeating units of the resin, and (B) a compound that generates an acid upon irradiation of an actinic ray or radiation.

Abstract: A positive resist composition of the present invention achieving significant performance improvements in high energy-beam lithography, which comprises a phenolic polymer having a property of being insoluble or hardly soluble in an aqueous alkali solution and becoming soluble in an aqueous alkali solution by the action of an acid, in which the phenolic polymer includes a repeating unit containing at least one selected from the group consisting of an acetal-protected phenolic hydroxyl group, a ketal-protected phenolic hydroxyl group, a tertiary ester-protected carboxyl group and a tetrahydropyranyl-protected carboxyl group; and a compound having a phenacylsulfonium structure and capable of generating an acid upon irradiation with one of actinic rays and radiation.

Abstract: A photosensitive conductive composition including a silver powder having an X-ray diffraction pattern in which a half width of a silver (111) peak is at least about 0.15°, an organic binder, a photopolymerizable monomer, a photopolymerization initiator and a lead-free glass.

Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.

Abstract: 1. A copolymer having recurring units of the following formulas (1), (2), and (3), wherein R1, R4, R5, and R6 are a hydrogen atom or a methyl group, R2, R3, and R7 represent a monovalent organic group, k is 1 or 2, 1 is 0–4, n is 1–3, m is 0–3, R8 is a substituted methyl group, 1-substituted ethyl group, 1-branched alkyl group, triorganosilyl group, triorganogermyl group, alkoxycarbonyl group, acyl group, or cyclic acid-dissociable group, with two or more R8 groups being the same or different, q is 1–3, and p is 0–3, the copolymer having a GPC average molecular weight of 3,000–100,000. The composition is useful as a polymer component for a radiation-sensitive resin composition suitable as a chemically-amplified resist.

Abstract: The disclosed invention relates to novel norbornene-type monomers containing pendent lactone or sultone groups. The invention also relates to norbornene-type polymers and copolymers comprising one or more repeating units represented by the formula: and containing pendent lactone or sultone groups. These polymers and copolymers are useful in making photoimagable materials. The photoimagable materials are particularly suitable for use in photoresist compositions useful in 193 and 157 nm photolithography.

Abstract: A stimulus sensitive composition containing a compound capable of generating an acid or a radical on receipt of an external stimulus, the compound being represented by the following formula (I): wherein Y represents a group having a bridged cyclic structure; R1 and R2 each independently represent a hydrogen atom, an alkyl group or an aryl group; R1 and R2 may be taken together to form a ring; Y1 and Y2 each independently represent an alkyl group or an aryl group; Y1 and Y2 may be taken together to form a ring; and X? represents a non-nucleophilic anion.

Abstract: An alkali-soluble resin having a polyaromatic group and a photosensitive composition comprising the alkali-soluble resin. The alkali-soluble resin comprises the following recurring units: wherein each of R1, R2, and R3, independently, is H or CH3; R4 is a substituted or unsubstituted polyaromatic derivative containing carbon and optionally containing one or more heteroatoms of oxygen, nitrogen and sulfur; X is alkyl, benzyl, or hydroxyl; each of n1 and n2, independently, is an integer of 0–8; and a, b, and c are integers when a and c respectively are not zero.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.

Abstract: Imageable elements, useful as on press developable lithographic printing plate precursors, are disclosed. The elements comprise an imageable layer over a substrate and an one or more adhesion promoting ingredients. The imageable layer comprises a polymerizable compound and a polymeric binder. The adhesion promoting ingredients are titanium chelate and/or co-polymers of a monomer having a polethylene oxide side chain with a monomer having either an acidic group or an anhydride group that has been ring opened to form an acidic group or groups.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) includes a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: Photoresist polymers and photoresist compositions containing the same are disclosed. A negative photoresist composition containing a photoresist polymer comprising a repeating unit represented by Formula 4 prevents collapse of patterns when photoresist patterns of less than 50 nm are formed. Accordingly, the disclosed negative photoresist composition is very effective for a photolithography process using EUV (Extreme Ultraviolet, 13 nm) light source. wherein R1, R2, R3, R4, R5, R6, R7, a, b and c are as defined in the description.

Abstract: A planographic printing plate precursor including: a support; and an image recording layer which is disposed on the support and contains a binder polymer, a polymerization initiator, a polymerizable compound, and an IR absorber. Upon exposure with a laser beam, an exposed portion of the image recording layer in the vicinity of the surface of the image recording layer is cured, and an exposed portion of the image recording layer in the vicinity of an interface between the image recording layer and the support is not cured. A developing rate of an unexposed portion of the image recording layer by an alkaline developer having a pH of 10 to 13.5 is preferably 100 nm/sec or more, and a permeation rate of the alkaline developer to an exposed portion of the image recording layer is preferably 100 nF/sec or less.

Abstract: A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a multihydroxy-containing additive; and a resist polymer comprising a first repeating unit from a first monomer. The resist polymer may also comprise a second repeating unit from a second monomer, wherein the second monomer has an aqueous base soluble moiety. The multihydroxy-containing additive has the structure Q-(OH)m, where Q may include at least one alicycic group and m may be any integer between 2 and 6. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a product that is insoluble in a developer solution.

Abstract: A radiation-sensitive resin composition comprising: (A) a resin comprising a hydroxyl group or carboxyl group, of which the hydrogen atom has been replaced by an acid-dissociable group possessing an alkali dissolution controlling capability, the resin increasing the solubility in an alkaline aqueous solution when the acid-dissociable group dissociates, and a photoacid generator comprising (B-1) a sulfonium salt represented by 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium perfluoro-n-octanesulfonate and 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate and (B-2) a sulfonium salt represented by triphenylsulfonium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition useful as a novel chemically amplified resist exhibiting excellent sensitivity and resolution to deep ultraviolet rays typified by an ArF excimer laser, superior pattern shape-forming capability, and the like.

Abstract: A resist composition comprising a base polymer having sulfone or sulfonate units introduced therein is sensitive to high-energy radiation below 300 nm, is endowed with excellent adherence to substrates while maintaining transparency, and is suited for lithographic microprocessing.

Abstract: A positive image recording material applicable to infrared laser comprising a support whereon is formed a photosensitive/heatsensitive layer containing (A) an alkali-soluble resin, (B) a photothermal conversion substance, and (C) at least one compound selected from a group of compounds defined by the formulae (I), (II), (III), and (IV) exhibiting improved solubility to an alkaline developer following exposure with an infrared laser wherein the substituent groups of the formulae (I) to (IV) are specified in the specification for this invention.

Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

Abstract: A polymer comprising recurring units having a partial structure of formula (1) wherein R1 is a single bond or alkylene or fluoroalkylene, R2 and R3 are H or alkyl or fluoroalkyl, at least one of R2 and R3 contains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance

Abstract: A positive photoresist composition comprises a radiations sensitive acid generator, and a polymer that may include a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, and a second repeating unit, which may include a pendant acid-labile moiety. The positive photoresist composition may also comprise at least one of a solvent, a quencher, and a surfactant. A patterned photoresist layer, made of the positive photoresist composition, may be formed on a substrate, the positive photoresist layer may be exposed to a pattern of imaging radiation, a portion of the positive photoresist layer that is exposed to the pattern of imaging radiation may be removed to reveal a correspondingly patterned substrate for subsequent processing in the manufacture of a semiconductor device.

Abstract: The present invention provides a positive-working, thermally imageable element generally comprising a multi-layered imageable coating. The invention provides an imageable element comprising a substrate, an ink-receptive top layer, and an underlayer, the underlayer including a specific copolymer described herein. The copolymer can be a polymer comprising constitutional units derived from: a) a monomer having a cyclic urea group; b) a monomer comprising an N-substituted maleimide; c) a (meth)acrylamide or (meth)acrylate monomer; and d) a (meth)acrylic acid or vinyl benzoic acid monomer. In another embodiment, the copolymer can be a polymer comprising constitutional units derived from: a) a monomer having a cyclic urea group; b) a (meth)acrylic acid or vinyl benzoic acid monomer; c) and a (meth)acrylonitrile monomer. The imageable element may be used to prepare a lithographic printing plate that is resistant to press chemistry and can optionally be baked to increase press runlength.

Abstract: Thermally imageable elements comprising a masking layer and a substrate are disclosed. The masking layer contains a sulfated polymer or a mixture of sulfated polymers and absorbs both infrared and ultraviolet radiation. When the masking layer is on the substrate, the imageable element may be imaged and developed to form a photomask. When the imageable element additionally comprises a photosensitive layer, the masking layer may be imaged and developed to form an integral photomask. The imageable elements that comprise a photosensitive layer are useful as flexographic printing plate precursors.

Abstract: The present invention provides new high resolution nanocomposite resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite negative resists comprising a photoacid generating component, a styrene component, and an optional polyhedral oligosilsequioxane component are provided. Negative resists of this invention may also contain an optional methacrylate component. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Abstract: A photoresist composition having (A) at least two polymers selected from the group consisting of: (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: —C(Rf)(Rf?)OH wherein Rf and Rf? are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10;(d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole or CX2?CY2 where X=F or CF3 and Y=H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2?CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; and (B) at least

Abstract: A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and, and an acid generator: Chemical Formula 1: wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; and R2 is a protecting group released by an acid.

Abstract: The present invention provides a presensitized plate useful for preparing a lithographic printing plate, which comprises a substrate provided thereon with a light-sensitive layer containing a fluoro-aliphatic group-containing copolymer prepared by copolymerizing at least (A) a fluoroalkyl(meth)acrylate represented by the general formula (I) and (B) a polyoxyalkylene group-containing ethylenic unsaturated monomer. By such a presensitized plate, a lithographic printing plate is provided with a light-sensitive layer whose uniformity and solubility or dispersibility in a developer are improved and which has an ability of forming high contrast images without entraining any reduction of the sensitivity.

Abstract: A photosensitive composition of the present invention has excellent sensitivity and pattern profile, which comprises an acid generator having a specific structure.

Abstract: A polymeric compound for photoresist of the present invention includes a monomer unit having 2,6-dioxabicyclo[3.3.0]octane skeleton in the structure. The monomer unit having 2,6-dioxabicyclo[3.3.0]octane skeleton includes a monomer unit represented by the following Formula (I): wherein R is a hydrogen atom or a methyl group. The polymeric compound for photoresist may include a monomer unit having 2,6-dioxabicyclo[3.3.0]octane skeleton, a monomer unit having a group of adhesion to substrate, and a monomer unit having an acid-eliminating group. The polymeric compound for photoresist of the present invention exhibits not only adhesion to substrate, acid-eliminating property and resistance to dry-etching but also has well-balanced solubility in solvents for photoresist and alkali-soluble property.

Abstract: A photosensitive resin composition for color filters comprises (A) an alkali-soluble resin; (B) a photopolymerizable monomer; (C) a photoinitiator; (D) an organic solvent; and (E) a pigment; wherein said alkali-soluble resin (A) is formed by polymerizing at least one monomer (a-1), which dipole moment is below 1.5D and having at least one aromatic functional group and at least one copolymerizable monomer (a-2) other than said monomer (a-1), wherein the content of oligomer having a molecular weight below 1,000 of said alkali-soluble resin (A) is less than 0.6 wt %, based on the photosensitive resin composition except solvent(D), which remains less residue on an unexposed portion(s) of the substrate and the black matrix at the time of development, and provides color pixels having excellent heat resistance and chemical resistance, further provides LCD having lower electric resistance of the ITO electrode.

Abstract: The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.

Abstract: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

Abstract: Thermally imageable elements comprising a masking layer and a substrate are disclosed. The masking layer contains a sulfobetaine and/or a carboxybetaine containing co-polymer or a mixture of a sulfobetaine and/or a carboxybetaine containing co-polymers and absorbs both infrared and ultraviolet radiation. When the masking layer is on the substrate, the imageable element may be imaged and developed to form a photomask. When the imageable element additionally comprises a photosensitive layer, the masking layer may be imaged and developed to form an integral photomask. The imageable elements that comprise a photosensitive layer are useful as flexographic printing plate precursors.

Abstract: A positive photoresist with uniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract: The present invention relates to new polymers that contain photoacid-labile groups that comprise arylalkyl groups. Particularly preferred are polymers having a benzylic carbon directly linked to an ester oxygen. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: The present invention pertains to photoimaging and the use of photoresists (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The present invention also pertains to novel hydroxy ester-containing polymer compositions that are useful as base resins in resists and potentially in many other applications.

Abstract: An imaging member, such as a negative-working printing plate or on-press cylinder, has an imaging layer comprised of a thermally sensitive compound and a photothermal conversion material. The thermally sensitive compound comprises a heat-activatable bisulfite adduct and can be a polymer or a small molecule compound. In the imaging member, the thermally sensitive compound reacts to provide increased hydrophobicity in areas exposed to energy that provides or generates heat. The imaging layer is considered “switchable” and can be used to provide a lithographic printing image without traditional alkaline wet processing.

Abstract: A positive photoresist composition comprising: (A) an oxime sulfonate compound represented by the specific formula, (B) a resin comprising repeating units including a group represented by the specific formula and which increases the solubility in an alkaline developing solution by the action of an acid, and (C) a fluoroaliphatic-group-containing polymeric compound containing repeating units derived from a monomer represented by the specific formula.

Abstract: Multilayer, thermally imageable elements useful as lithographic printing plate precursors are disclosed. The imageable elements comprise a substrate, an underlayer over the substrate, an underlayer over the substrate, and a top layer over the underlayer. The top layer contains a co-polymer that alkylene glycol side chains, polyalkylene glycol side chains, side chains that have silyl groups substituted with three alkoxy and/or phenoxy groups, and/or side chains that have alkyl ammonium side chains. The imageable elements have excellent resistance to press room chemicals.

Abstract: A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The negative photoresist composition comprises a radiation sensitive acid generator, a first polymer containing an alkoxymethyl amido group and a hydroxy-containing second polymer. The first and second polymers may also have a repeating unit having an aqueous base soluble moiety. The first and second polymers undergo acid catalyzed crosslinking upon exposure of the acid to radiation, producing a product that is insoluble in an aqueous alkaline developer solution.

Abstract: The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Abstract: Imageable elements useful as lithographic printing plate precursors are disclosed. The element comprises an imageable layer over a support. The imageable layer contains a photothermal conversion material and a polymeric binder that comprises a polymer backbone with sulfobetaine- and/or carboxybetaine-containing side chains. The imageable elements do not require processing in a developer. They can be thermally imaged and immediately treated with fountain solution and ink without a development step.

Abstract: A radiation-sensitive resin composition comprising (A) a resin which comprises at least one recurring unit (I-1), (I-2), or (I-3), and a recurring unit (II), and is insoluble or scarcely soluble in alkali, but becomes alkali soluble by action of an acid, (B) a photoacid generator, and (C) a polycyclic compound.

Abstract: A ternary copolymer comprising units of ?-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of ?-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Abstract: A sulfonate of the formula (I): wherein Q1, Q2, Q3, Q4 and Q5 each independently represents a certain substituent, and A+ represents a counter ion, with the proviso that at least one of Q1, Q2, Q3, Q4 and Q5 is a group of the formula (II) wherein R1 and R2 each independently an alkyl having 1 to 12 carbon atoms or the like; and a chemical amplification type positive resist composition comprising the sulfate of the formula (I) and a resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid.

Abstract: Novel silicon-containing polymers are provided comprising recurring units having a POSS pendant and units which improve alkali solubility under the action of an acid. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of up to 300 nm and improved resistance to oxygen plasma etching.