Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): 1

Abstract: A positive photoresist composition comprises (A) a resin containing a specific repeating structural unit such as norbornene structure, the resin being capable of increasing the solution velocity in an alkali developer by the action of acid; and (B) a compound capable of generating an acid by irradiation with one of an actinic ray and radiation.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: The present invention relates to a radiation sensitive photoresist composition comprising a photoacid initiator and a polycyclic polymer comprising repeating units that contain pendant acid labile groups. Upon exposure to an imaging radiation source the photoacid initiator generates an acid which cleaves the pendant acid labile groups effecting a polarity change in the polymer. The polymer is rendered soluble in an aqueous base in the areas exposed to the imaging source.

Abstract: A radiation-sensitive resin composition comprising: (A) a resin comprising a hydroxyl group or carboxyl group, of which the hydrogen atom has been replaced by an acid-dissociable group possessing an alkali dissolution controlling capability, the resin increasing the solubility in an alkaline aqueous solution when the acid-dissociable group dissociates, and a photoacid generator comprising (B-1) a sulfonium salt represented by 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium perfluoro-n-octanesulfonate and 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate and (B-2) a sulfonium salt represented by triphenylsulfonium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition useful as a novel chemically amplified resist exhibiting excellent sensitivity and resolution to deep ultraviolet rays typified by an ArF excimer laser, superior pattern shape-forming capability, and the like.

Abstract: Polymerizable silicon-containing compounds of formula (1) wherein R1 is hydrogen, halogen or monovalent organic group are polymerized into polymers. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity and resolution at a wavelength of less than 300 nm, and high resistance to oxygen plasma etching, and thus lends itself to micropatterning for the fabrication of VLSIs.

Abstract: The invention provides a stereolithographic resin composition including a photo-curable component, a resin having a function of causing a reversible, quick sol-gel phase transition based on temperature change, and a filler, and a stereolithographic method using the resin composition.

Abstract: Provided are alkenyl ether-based monomers having multi-ring structure, and photosensitive polymers and resist compositions obtained from the same. The photosensitive polymer includes a monomer unit represented by the following formula: wherein R4 and R5 are independently -H or -CH3, and R4 are independently -H, -OH or a alkyl group having 1-20 carbon atoms.

Abstract: There is provided a positive type resist composition comprising (A) a resin component with only units derived from an acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent component, wherein the resin component (A) is a copolymer comprising (al) a structural unit derived from an acrylate ester comprising, as an acid dissociable dissolution inhibiting group on a side chain, a polycyclic dissolution inhibiting group which is eliminated more easily than a 2-methyl-2-adamantyl group, (a2) a structural unit derived from an acrylate ester comprising a lactone containing polycyclic group on a side chain, and (a3) a structural unit derived from an acrylate ester comprising a hydroxyl group containing polycyclic group on a side chain; as well as a resist pattern formation method using such a composition.

Abstract: There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3).

Abstract: A presensitized plate for preparing a lithographic printing plate comprises a substrate provided thereon with a light-sensitive layer containing a fluoro-aliphatic group-containing copolymer prepared by copolymerizing at least (A) an addition polymerizable monomer having, on a side chain, a fluoro-aliphatic group in which hydrogen atoms are replaced with fluorine atoms and (B) a (meth)acrylate having an ester chain represented by a specific general formula. The use of the foregoing specific fluorine atom-containing polymer permits the formation of a light-sensitive layer having uniform surface condition without causing abnormality in the surface quality due to the foaming phenomenon observed during the production and also permits the production of a positive light-sensitive resin composition having excellent solubility and dispersibility in a developer.

Abstract: There is provided a resist composition containing a photosensitive resin and used in photolithography, said photosensitive resin having a transmittance of 40% or more for a light having a wavelength of 157 nm in applying to a thickness of 0.1 &mgr;m. The composition has a characteristic that it allows easy formation of a fine pattern having a good profile, particularly at a wavelength for exposure with an F2 excimer laser.

Abstract: A mixture curable thermally and with actinic radiation, comprising

Abstract: The present invention provides a presensitized plate useful for preparing a lithographic printing plate, which comprises a substrate provided thereon with a light-sensitive layer containing a fluoro-aliphatic group-containing copolymer prepared by copolymerizing at least (A) a fluoroalkyl(meth)acrylate represented by the general formula (I) and (B) a polyoxyalkylene group-containing ethylenic unsaturated monomer. By such a presensitized plate, a lithographic printing plate is provided with a light-sensitive layer whose uniformity and solubility or dispersibility in a developer are improved and which has an ability of forming high contrast images without entraining any reduction of the sensitivity.

Abstract: A chemically amplified photoresist composition comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) as photosensitive acid donor, at least one compound of the formula Ia, Ib, Ic, IIb or IIc wherein R1 is for example C1-Calkyl, C3-C30cycloalkyl, C1-C5haloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, C6-C12bicycloalkenyl, phenyl, naphthyl, anthracyl, phenanthryl, or is a heteroaryl radical; all of which are unsubstituted or substituted; optionally some of the substituents form 5- or 6-membered rings with further substituents on the phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl ring or with one of the carbon atoms of the phenyl, naphtyl, anthracyl, phenanthryl, or heteroaryl ring; R′1 is for example C1-C12alkylene, C3-C30cycloalkylene, phenylene, naphtylene, diphenylene, or oxydiphenylene, wherein these radicals are unsubstituted or substituted; A and B for example are a direct bond; Ar1 and Ar2 independently

Abstract: A radiation-sensitive resin composition comprising (A) a resin comprising at least two recurring units of the formulas (1)-(6) in the total amount of 5-70 mol %, but each in the amount of 1-49 mol %, the resin being insoluble or scarcely soluble in alkali, but becoming easily soluble in alkali by the action of an acid, and (B) a photoacid generator.

Abstract: The present invention discloses a chemical amplified photoresist composition including a polymer having a repeated unit of the formula (II), wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The chemical amplified photoresist composition of the present invention can be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light sources, and exhibit excellent resolution, figures and photosensitivity.

Abstract: A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

Abstract: A photosensitive monomer including a methylene butyrolactone derivative represented by the following formula: wherein R1 is a hydrogen atom or alkyl group, R2 is an acid-labile group, X is a hydrogen atom, or substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and Y is a substituted or unsubstitued alkyl group or alicyclic hydrocarbon group having 1 to 20 carbon atoms.

Abstract: In a positive-working chemically amplified radiation sensitive resin composition with high sensitivity and high resolution comprising an alkali-insoluble or slightly alkali-soluble resin protected with an acid-labile protecting group and an acid generating compound upon irradiation with radiation, a difference of resolution line widths of isolated and dense patterns in a circuit pattern, in which an isolated pattern and a dense pattern are mixed, can be reduced by using a resin having activation energy (&Dgr;E) to make the protecting group cleaved of 25 Kcal/mole or higher as the alkali-insoluble or slightly alkali-soluble resin protected with an acid-labile protecting group, and a mixture of a compound generating a carboxylic acid upon irradiation with radiation and a compound generating a sulfonic acid upon irradiation with radiation as the acid generator.

Abstract: Sulfonyldiazomethane compounds containing a long-chain alkyl- or alkoxy-naphthyl group are novel and useful as photoacid generators. Chemical amplification type resist compositions comprising the same are suited for microfabrication because of many advantages including improved resolution, improved focus latitude, and minimized line width variation or shape degradation even on long-term PED.

Abstract: A radiation-sensitive resin composition including (A) a resin containing an alicyclic skeleton in its backbone, and (B) a radiation-sensitive acid-generating agent, is provided. This composition is excellent in transparency with respect to radiation and dry etching resistance, and can give a photoresist pattern excellent in adhesion to substrates, sensitivity, resolution, and developability.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: The present invention provides a photosensitive lithographic printing plate which displays superior ink receptivity and superior film strength of the photosensitive layer (image area). The photosensitive lithographic printing plate is produced by providing, on top of a support, a photosensitive composition comprising a fluororesin having a fluoro aliphatic group of 3 to 20 carbon atoms in which at least two of three terminal hydrogen atoms are substituted for fluorine atoms, and an ethylene based unsaturated group, as well as a negative photosensitive compound.

Abstract: Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic and at least one ethylenically unsaturated compound contains at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component.

Abstract: An antireflective coating composition including a polyester and/or a polyurethane; and a crosslinker selected from the group consisting of tetraamidomethyl ethers.

Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.

Abstract: The present invention provides an initiator system including an infrared-absorbing compound that exhibits an electronic transition band in the near-infrared region, an initiator, and a metallocene compound. Upon exposure to infrared radiation, the initiator system is capable of producing radicals sufficient to initiate a photopolymerization reaction. Suitable infrared-absorbing compounds include indocyanine dyes, for example. Trihalomethyl triazine compounds and onium compounds are suitable initiators. Suitable metallocene compounds include ferrocenes and titanocenes. The present invention also provides an infrared-sensitive composition including an ethylenically unsaturated polymerizable component, an infrared-absorbing compound that exhibits an electronic transition band in the near-infrared region, an initiator, and a metallocene compound. The infrared-sensitive composition provides improved photospeed and sensitivity in some embodiments.

Abstract: A chemical amplification type positive resist composition comprising:

Abstract: A resist composition includes a photosensitive polymer having a lactone in its backbone.

Abstract: A photosensitive polymer including a copolymer of an acrylate or methacrylate monomer having a group indicated by the following formula (I), a comonomer selected from a maleic anhydride monomer and a cyclic vinyl ether monomer, and a resist composition including the same. In the formula, R1, R2, R3, and R4 are independently a hydrogen atom, a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, a benzyl group, a phenoxy group, or —M(R′)3, M is Si, Ge, Sn, or OSi, and each R′ independently is a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, or a phenoxy group.

Abstract: A polymer comprising recurring units of formula (1) and/or (2) wherein R1 and R2 are H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents; R3 and R4 are H, C1-15 alkyl or alkoxy or C2-15, alkoxyalkyl which may have halogen substituents, and R3 and R4 may together bond with the carbon atom to form an aliphatic ring, or R3 and R4, taken together, may be an oxygen atom; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1 and R2 are H or C1-15 alkyl, R1 and R2, taken together, may form a ring; R3 is H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents, not all R1, R2 and R3 are hydrogen; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.

Abstract: The invention provides a polymer comprising recurring units containing bridged aliphatic rings in the backbone and having a hydroxyl, acyloxy or alkoxylcarbonyloxy group as well as a lactone structure bonded through a spacer, the polymer having a weight average molecular weight of 1,000-500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula 1

Abstract: A resist composition has a polymer containing a carboxyl group with a protective group at a side chain of a monomer unit, the polymer being insoluble to basic aqueous solution and becoming soluble to basic aqueous solution when the protective group of the carboxyl group is eliminated from the side chain, the protective group of the carboxyl group being represented by: where R is a hydrogen atom or a single-bonded hydrocarbon group, n is an integer 1 to 4, and R is bonded to a position other than the ester bonded position.

Abstract: This invention relates to a photo-polymerization type photosensitive electrode paste composition for a plasma display panel that is capable of preventing a bubble from occurring on an electrode surface during an electrode paste printing process and a damage of an electrode pattern caused by adhesive strength reduction, and a method of fabricating the electrode using the same.

Abstract: A photosensitive polymer having hydrophobic and hydrophilic portions homogenously distributed therein and a resist composition comprising the photosensitive polymer.

Abstract: The present invention relates to a novel styrene-anhydride copolymer containing amido group, which comprises the following repeating units (I) and (II): wherein R represents a residue of (meth)acrylate monomer containing hydroxyl group; R1 and R2 are the same or different and each represents a C1-6 alkyl group, or R1 and R2 are taken together with the nitrogen atom to which they attach to form a 5- to 6-member heterocyclic group containing nitrogen. The present invention also relates to process for producing the above copolymer and to the use of the copolymer as a photo resist in an alkaline soluble development of an irradiative reaction and as a solder resistant photo resist in printed circuit boards.

Abstract: A resist composition comprising a binder resin and a radiation-sensitive compound. The binder resin is an alkali-soluble resin or becomes alkali-soluble resin by the action of the radiation-sensitive compound after irradiation, and has a polymerization unit represented by the following formula (I): wherein, R1 represents a fluoroalkyl group having 1 to 12 carbon atoms and having at least one fluorine atom, and R2 represents hydrogen atom or an acyl group having 2 to 5 carbon atoms.

Abstract: The present invention provides a copolymer comprising repeating units derived from (A) at least one fluoroalkyl (meth) acrylate represented by the following general formula (I) or (II): 1

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.

Abstract: A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride.

Abstract: A photosensitive laminate includes a substrate and a resist layer 500 to 5800 angstroms thick formed on the substrate. A composition for the resist layer includes (A) a compound which generates an acid upon irradiation with radioactive ray, (B) an alkali-soluble novolak resin, and (C) a compound having at least one acid-decomposable dissolution-inhibiting group, and the dissolution-inhibiting group is decomposable by action of an acid generated from the ingredient (A) to yield an organic carboxylic acid. This photosensitive laminate is sequentially subjected to selective exposure to KrF excimer laser light or to light having a short wavelength equal to or less than that of F2 laser, post-exposure baking, and developing with an alkali to yield a resist pattern.

Abstract: Photoresist compositions, which can attain high-accuracy etching without causing separation and flexible printed wiring boards prepared with the photoresist compositions are disclosed. In order to etch a polyimide precursor layer on a conductive circuit, a photoresist composition comprising a photopolymerizable organic material (A), a water-soluble resin (B) and an amino-group-containing resin (C) is applied on the surface of the polyimide precursor layer to form a photoresist layer. Then, the photoresist layer is patterned by a photolithographic process. The polyimide precursor layer is etched and the pattern of the photoresist layer is transferred to the polyimide precursor layer. The amino-group-containing resin (C) in the photoresist layer is combined with an acid anhydride in the polyimide precursor layer to attain good adhesion and high-accuracy etching without causing separation of the photoresist layer.

Abstract: A photosensitive polymer includes a copolymer containing adamantylalkyl vinyl ether, and a resist composition includes the photosensitive polymer.

Abstract: A chemically amplified positive resist composition is provided which is excellent in sensitivity and resolution; and comprises a resin (X) which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali by the action of acid, and has a polymeric unit (a) derived from an alicyclic unsaturated carboxylic acid ester in which a carboxylic acid ester group represented by the formula (I): wherein R1 represents an alkyl having 1 to 4 carbon atoms, R represents an alicyclic hydrocarbon residue which may be optionally substituted with a group selected from hydroxyl and oxo, and R2 represents an alkyl having 1 to 4 carbon atoms, or R and R2, together with carbon atoms to which R2 and R are bonded, form a ring, is bonded to an alicyclic hydrocarbon having a polymerizable carbon-carbon double bond in its ring; and a polymeric unit (b) derived from maleic anhydride; and an acid-generating agent (Y).

Abstract: The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.