Abstract: A positive photoresist composition for far ultraviolet ray exposure improved in standard developing solution suitability, good in defocus latitude depended on line pitch of a resist pattern formed and excellent in sensitivity to a light source of shorter wavelength, which comprises (i) a compound capable of generating an acid by irradiation of actinic light or radiation; and (ii) a resin containing (a) repeating units each having an alkali-soluble group protected with at least one specific group containing an alicyclic hydrocarbon structure, (b) repeating units having, for example, lactone rings, and (c) repeating units derived from (meth)acrylic acid, the content of the repeating units of (c) being from 5 mol % to 18 mol % based on the total repeating units of the resin, and the resin being decomposable by action of an acid to increase its solubility in an alkali solution.

Abstract: A photosensitive composition comprising (a) an ethylenically unsaturated double bond-containing compound, (b) a sensitizing dye and (c) a photopolymerization initiator, wherein the sensitizing dye is a phthalocyanine compound showing the maximum absorption within a range of from 750 to 1,200 nm.

Abstract: The present invention relates to a polymerizable coating composition suitable for the manufacture of printing plates developable on-press. The coating composition comprises (i) a polymerizable compound and (ii) a polymeric binder comprising polyethylene oxide segments, wherein the polymeric binder is selected from the group consisting of at least one graft copolymer comprising a main chain polymer and polyethylene oxide side chains, a block copolymer having at least one polyethylene oxide block and at least one non-polyethylene oxide block, and a combination thereof. The invention is also directed to an imageable element comprising a substrate and the polymerizable coating composition.

Abstract: A chemically amplified positive resist composition capable of giving a resist film excellent in adhesion to a substrate; excellent in various resist performance characteristics such as dry etching resistance, sensitivity and resolution; and comprising a resin (X) which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali due to an action of acid, and has a polymeric unit (a) derived from 3-hydroxy-1-adamantyl(meth)acrylate and a polymeric unit (b) derived from &bgr;-(meth)acryloyloxy-&ggr;-butyrolactone wherein the lactone ring may optionally be substituted by alkyl; and an acid generating agent (Y).

Abstract: Provided are a resist material having markedly high resolution and etching resistance of a practically usable level, and being useful for fine microfabrication; a patterning method using the resist material; and a polymer useful as a base resin for the resist material. More specifically, provided are a polymer having a weight-average molecular weight of 1,000 to 500,000, which comprises one or more repeating units selected from the group consisting of repeating units represented by formulae (1) to (3) below; and one or more repeating units of the formula (4) below; and a resist material containing the polymer.

Abstract: The pattern formation material of this invention includes a base polymer having a unit represented by the following General Formula 1: General Formula 1: wherein R0 is an alkyl group; R1 is a group that is decomposed through irradiation of light; and R3 and R4 are the same or different and selected from the group consisting of hydrogen and compounds including hydrogen and carbon.

Abstract: Provided is a photosensitive copper paste permitting the formation of a fine and thick copper pattern having high adhesion to a substrate, and having excellent preservation stability without causing gelation, and a method of forming a copper pattern, a circuit board and a ceramic multilayer substrate using the photosensitive copper paste. The photosensitive copper paste includes a mixture of an organic binder having an acid functional group, a copper powder and a photosensitive organic component. The copper powder has a surface layer having a thickness of at least 0.1 &mgr;m from the surface composed CuO as a main component. The copper powder also has an oxygen content of about 0.8% to 5% by weight.

Abstract: A positive photoresist composition comprises: a compound capable of generating an acid upon irradiation with an actinic ray or a radiation, in which the compound contains (A1) a sulfonate compound of a sulfonium, and (A2) a sulfonate compound of an N-hydroxyimide or a disulfonyldiazomethane compound; and a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developing solution, in which the resin contains a repeating unit having a specific lactone structure.

Abstract: A polymer comprising units of formula (1-1) or (1-2) and having a weight average molecular weight of 1,000 to 500,000 is provided. R1 is an acid labile group, R2 is H or straight or branched C1-4 alkyl, Z is a tetravalent C2-10 hydrocarbon group, and k=0 or 1. A resist composition comprising the polymer as a base resin has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.

Abstract: Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.

Abstract: A resist film is formed by applying, on a semiconductor substrate, a chemically amplified resist including an acid generator of an onium salt having a halogen atom both in the cation and the anion thereof. The resist film is irradiated with a F2 laser beam with a wavelength of a 157 nm band or an Ar2 laser beam with a wavelength of a 126 nm band for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern.

Abstract: A process for producing articles covered with a patterned film which can be formed by a short time of exposure and has high development sensitivity after exposure and excellent pattern accuracy and a photosensitive composition. The process comprises applying the photosensitive composition to a substrate, exposing the coating film to light in a pattern-form to polymerize exposed portions of the coating film, dissolving and removing unexposed portions. The composition comprises a metal alkoxide, a &bgr;-diketone and acrylic acid or methacrylic acid.

Abstract: There are provided a photosensitive polymer having a copolymer of alkyl vinyl ether and a resist composition containing the same. The photosensitive polymer includes a copolymer of alkyl vinyl ether and maleic anhydride, represented by the following structure: wherein X is one of a linear alkyl vinyl ether and a cyclic alkyl vinyl ether, which are respectively represented by the structures wherein y is one of the integer values 1 through 4, R1 is one of a hydrogen atom and a methyl group, R2 is a C1 to C20 hydrocarbon, and R3 is one of a hydrogen atom, a C1 to C3 alkyl group and an alkoxy group.

Abstract: A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance.

Abstract: A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.

Abstract: The present invention provides photoresist monomers, and photoresist polymers comprising the same. In one aspect of the present invention, the photoresist monomer of the present invention is dipropargyl malonic acid cyclic isopropylidene ester of the formula: Photoresist compositions comprising the photoresist polymers of the present invention have superior 157 nm wavelength transmittance, etching resistance, heat resistance and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and therefore are suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device.

Abstract: A pigment-dispersion photo-sensitive coating solution comprising a binder resin, an organic-solvent and a main pigment dispersed in the solvent, wherein the combined area of peaks detected at a relative retention ratio in the range of 0.68 to 0.72 based on a retention time of dibutyl phthalate and peaks detected at a relative retention ratio in the range of 1.06 to 1.10 based on a retention time of dibutyl phthalate is not more than 50% of the total area of all peaks when the pigment is extracted by ethyl acetate and the extracts are analyzed by high-speed liquid chromatography using dibutyl phthalate as internal standard, is provided and use of the coating solution ensures that the colored image of stable quality is formed.

Abstract: A chemically amplified positive resist composition comprising a base resin and a compound containing two to six functional groups, specifically alkenyloxy, acetal and ortho-ester groups in the molecule is suitable for forming a contact hole pattern by the thermal flow process.

Abstract: An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

Abstract: Novel norbornene fluoroacrylate copolymers are provided. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: A polymeric film which is substantially gelatin free has a polymeric film substrate and a coating layer containing a polymer having at least one or more repeating units having at least one or more pendant (—POXY) groups, wherein X and Y, which may be the same or different, are OH or OM wherein M is a cation. The polymeric film is suitable for use as a component of a printing plate.

Abstract: The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of imaage-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

Abstract: (Meth)acrylate compounds having a norbornane, bicyclo[2.2.2]octane, 7-oxanorbornane or cyclohexane ring structure and a &ggr;-butyrolactone ring structure connected together by a suitable linker are novel and useful in forming polymers having high transparency, especially at the exposure wavelength of an excimer laser.

Abstract: A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula I and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value.

Abstract: A heat-sensitive composition of the positive type comprising a polymeric binder and a solubility inhibitor, wherein the said solubility inhibitor is a hydroxylated acrylic polymer, a hydroxylated acrylic copolymer or of a derivative thereof wherein some hydroxyl groups have been esterified by a carboxylic acid or a reactive derivative thereof.

Abstract: There is provided a photosensitive resin composition comprising: a copolymer resin; a bifunctional or higher polyfunctional photopolymerizable acrylate monomer; an epoxy resin; and an initiator, the copolymer resin comprising 5 to 55% by mole of constituent units represented by formula (1) and 5 to 95% by mole of constituent units represented by formula (2), the constituent units represented by formula (1) having been partially reacted, through carboxyl groups thereof, with a (meth)acryloylalkyl isocyanate compound, the constituent units represented by formula (2) having been partially reacted, through hydroxyl groups thereof, with a (meth)acryloylalkyl isocyanate compound, the copolymer resin containing 5 to 95% by mole of (meth)acryloyl groups and having an acid value of 5 to 400 mg KOH/g and a weight average molecular weight of 10,000 to 1,000,000 as determined using polystyrene as a standard: 1

Abstract: A chemically amplified positive resist composition excellent in adhesion to a substrate, as well as good in dry-etching resistance; suitable for use in excimer laser lithography utilizing ArF, KrF or the like; and comprising a resin (X) which, per se, is insoluble in alkali but becomes soluble in alkali when subjected to an action of acid, and has a polymeric unit represented by the formula(I), a polymeric unit represented by the formula(II) and a polymeric unit represented by the formula(III): and an acid generating agent (Y).

Abstract: A substantially gelatin free polymeric film includes a coating layer of a polymer having at least one —POXY pendant group, pendant carboxyl group or capable of forming carboxyl groups and further comprises a sulphonated monomer, salt or derivative.

Abstract: Toner binder resins with low odor and excellent charging stability as toners, containing styrene-acrylic copolymers or mixtures thereof, wherein the total content of volatile components is no greater than about 1,500 ppm, the content of volatile components with benzene rings is no greater than about 1,400 ppm, and the content of volatile components with benzene rings and boiling point of below about 200° C. is no greater than about 500 ppm.

Abstract: A chemically amplified positive resist composition which is suitable for use in an exposure process utilizing an ArF excimer laser and is capable of forming a resist coat exhibiting a high hydrophillcity; is excellent in adhesion to a substrate and satisfactory in resist performance characteristics; and comprises a resin (X) which has a polymeric unit(a) derived from dihydroxy-1-adamantyl (meth)acrylate and a polymeric unit(b) derived from 2-alkyl-2-adamantyl (meth)acrylate, and which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali due to an action of acid; and an acid generating agent (Y).

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Polymers of the invention contain a hydroxyadamantyl functionality. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: The present invention provides novel photoresist monomers, and photoresist polymers comprising the same. The photoresist monomer of the present invention is selected from the group consisting of compounds of the formulas: wherein R1 to R4 and n are those defined herein. The photoresist compositions comprising the photoresist polymers of the present invention have high transparency in a deep ultraviolet light region, and also have excellent etching resistance, heat resistance, sensitivity, adhesiveness and resolution. Accordingly, the photoresist composition is suitable for lithography process using a deep ultraviolet light sources such as ArF, KrF, VUV, EUV, E-beam and X-ray for fabricating minute circuit of a high integration semiconductor device.

Abstract: In a first aspect, polymers of the invention in general comprise a photoacid-labile unit that can generate multiple anions or acidic groups such as hydroxy (particularly phenolic) preferably from a single photoacid-induced polymer deprotection reaction. In a further aspect, polymers of the invention comprise a photoacid-labile unit that generate substantially or essentially no volatile species species during a photoacid-induced deprotection reaction of the polymer to thereby avoid undesired outgassing and/or shrinkage of a resist coating layer containing a polymer of the invention. In particularly preferred aspects of the invention, polymers are provided that combine both aspects, i.e. the polymers contain blocking groups that can generate multiple anions or acid groups preferably from a single photoacid-induced polymer deprotection reaction, and those blocking groups also generate substantially no volatile species during microlithographic processing.

Abstract: A positive photosensitive composition comprises: (A) a compound generating an acid upon irradiation with one of an actinic ray and radiation; (B) a resin containing a monocyclic or polycyclic alicyclic hydrocarbon structure and increasing the solubility to an alkali developer by the action of an acid; and (C) an onium salt of carboxylic acid.

Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: 1

Abstract: A carbazole derivative of the following formula (1), 1

Abstract: A photoresist composition which includes hydroxycarborane either incorporated as a monomeric dissolution modifier or as pendent groups on a polymer backbone. The photoresist composition is particularly useful in a bilayer thin film imaging lithographic process in which ultraviolet radiation-imaging in a wavelength range of between about 365 nm and about 13 nm is employed.

Abstract: A radiation-sensitive resin composition comprising (A) a resin containing an acid-dissociable group which is insoluble or scarcely soluble in alkali and becomes alkali soluble when the acid-dissociable group dissociates, comprising the following recurring unit (I), recurring unit (II), and at least one of the recurring units (III-1) and (III-2), and (B) a photoacid generator. The radiation-sensitive resin composition is suitable for use as a chemically-amplified resist showing sensitivity to active radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser, exhibiting superior dry etching resistance without being affected by types of etching gas, having high radiation transmittance, exhibiting excellent basic characteristics as a resist such as sensitivity, resolution, and pattern shape, possessing excellent storage stability as a composition, and exhibiting sufficient adhesion to substrates.

Abstract: A photoresist polymeric compound includes a monomer unit represented by following Formula (I): 1

Abstract: Disclosed is a positive photosensitive composition capable of giving good sensitivity, resolution and resist pattern and exhibiting sufficiently high dry etching resistance on use of an exposure light source of 250 nm or less, particularly 220 nm or less, which composition comprises (A) a compound generating an acid on irradiation of an active light ray or radiation and (B) a resin having (i) at least one polycyclic-type alicyclic group, (ii) at least one ester group which decomposes by the action of an acid and increases the solubility in an alkali developer and (iii) at least one acetal group which decomposes by the action of an acid and increases the solubility in an alkali developer, or comprises (A) a compound generating an acid on irradiation of an active light ray or radiation, (C) a resin having a polycyclic-type alicyclic group and an ester group which decomposes by the action of an acid and increases the solubility in an alkali developer, and (D) a resin having a polycyclic-type alicyclic group and

Abstract: There is provided a photosensitive resin having at least three moieties in the backbone chain, two moieties of which moieties are an alicyclic group moiety and a sulfonyl moiety. The photosensitive resin has a superior solubility in solvents and a superior dry-etching resistance, and enables easy fabrication of highly integrated semiconductor devices.

Abstract: A chemically amplified positive resist composition excellent in sensitivity and resolution as well as other resist performance characteristics comprising a resin (X) which has a polymeric unit represented by the following formula (I): wherein R1 represents hydrogen or methyl, R2 and R3 represent alkyl having 1 to 4 carbon atoms, and R4 and R5 represent hydrogen, hydroxyl or alkyl, polymeric unit represented by the following formula (II): and a polymeric unit derived from unsaturated dicarboxylic acid anhydride selected from maleic anhydride and itaconic anhydride; and an acid generating agent (Y).

Abstract: A photopolymerizable composition that is cured with visible light or an infrared laser and is used as a recording layer in a negative planographic printing plate precursor. The photopolymerizable composition is cured by exposure and includes (A) a polymerizable compound that is solid at 25° C. and has at least one radical-polymerizable ethylenically unsaturated double bond in a molecule, (B) a radical polymerization initiator, (C) a binder polymer and, as required, (D) a compound generating heat by infrared exposure.

Abstract: Provided are alkenyl ether-based monomers having multi-ring structure, and photosensitive polymers and resist compositions obtained from the same.

Abstract: It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source. The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained.

Abstract: A chemically amplifying type positive resist composition suitable for use in the lithography utilizing an ArF or KrF excimer laser and excellent in the shape of profile is provided, which comprises a resin which has an alkali-soluble group protected by 2-alkyl-2-adamantyl group or 1-adamantyl-1-alkylalkyl group, and which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali by the action of an acid; and a sulfonium salt acid generating agent represented by the following formula (I): 1

Abstract: Improved resolution photoresist compositions which are capable of high resolution lithographic performance using 193 nm imaging radiation (and possibly also with other imaging radiation) are obtained by use of imaging copolymers which are improvements over known alternating copolymer-based photoresists. The copolymers are characterized by the presence of an alkyl-functionalized cyclic olefin third monomeric unit which enhances the resolution of the photoresist. The performance of the compositions may be further enhanced by the use of bulky acid-labile protecting groups on the imaging copolymer.

Abstract: A radiation-sensitive resin composition comprising: (A) an acid-dissociable group-containing resin, insoluble or scarcely soluble in alkali but becoming soluble in alkali when the acid-dissociable group dissociates, and containing recurring units with specific structures and (B) a photoacid generator of the formula (3), 1

Abstract: The invention relates to photosensitive compositions, which can be developed positively. Traditional compositions have either inadequate photosensitivity or they are not appropriate for use on the copper surfaces, for example of circuit boards, since the exposed coating sections of the composition cannot be completely removed during developing, which results in problems in subsequent plating or etching. In the photosensitive compositions according to the invention, these disadvantages cannot be observed. Various compositions are described, which contain photo acid generators and a polymer resin with side groups, which can split acid, said polymer resin being formed by polymerizing at least three different acrylate- or methacrylate-monomers.