Abstract: A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.

Abstract: A continuous-atmosphere high-temperature furnace apparatus comprises a high-temperature furnace section, a mechanism for continuously supplying substrates or samples to the high-temperature furnace section, and a mechanism for continuously discharging treated substrates or samples from the high-temperature furnace section. Gas is exhausted from the high-temperature furnace section and ambient gas is supplied thereto for reaction to produce carbon materials and various other nanomaterials or to burn and graphitize the nanomaterials. The substrates or samples are sequentially moved for heat treatment, thereby improving the work efficiency of the high-temperature furnace.

Abstract: The apparatus for the continuous catalytic removal of binder from metallic and/or ceramic shaped bodies produced by powder injection molding, which comprises a binder removal furnace through which the shaped bodies pass in a transport direction and are brought to a suitable process temperature, a feed facility for introduction of a process gas which is required for binder removal and comprises a reactant, at least one facility for the introduction of a protective gas into a reaction space of the binder removal furnace and a flare to burn the gaseous reaction products obtained in binder removal, wherein one or more devices which lead to a flow of the process gas directed transversely to the transport direction in the apparatus are present.

Abstract: One aspect of the present invention provides a continuous heat treatment furnace in which an atmosphere-control gas is introduced to a heating chamber 1 having a heating zone 1a, metal tubes are continuously charged along an axial direction from a furnace entrance 2a, and the metal tube subjected to a heat treatment is taken out from a furnace exit 2b. The continuous heat treatment furnace includes a front chamber 4 which has a preheating zone 3 on an entrance side of the heating chamber and seal curtains 5a and 5b which are located on an entrance side and an exit side of the front chamber. Another aspect of the present invention provides a metal tube subjected to the heat treatment using the continuous heat treatment furnace, and yet another aspect of the present invention provides a heat treatment method for performing the heat treatment using the heat treatment furnace.

Abstract: The combustor for solid particulate fuels is particularly well suited for burning shelled corn, but is also capable of burning other solid particulate fuels as desired, with no modification required for their use. The combustor includes a rotary agitator extending across the combustor chamber or “burning pot,” with the agitator having a plurality of radial arms. Combustion air passes through the hollow agitator shaft outwardly through the hollow arms, the arms distributing combustion air into the fuel mass as the arms rotate therethrough to produce more efficient combustion of the fuel and thereby reduce coagulation of partially burned corn on the internal surfaces of the combustor. The opposed walls of the combustor include at least one pivotally mounted wall, with the angle of that wall being adjustable to adjust the ash dispersal gap between the pivoting wall and the opposite wall.

Abstract: A milled materials processor consists of a self contained, stationary or fully mobile thermal process plant for the thermal processing of 100% recycled asphalt pavement into new hot mix paving material. Mobile units are designed for transportation by vehicle to a job site and rapid arrangement. For example, the milled materials processing unit at the standard legal load or non-permit load size and configuration processes approximately 25 tons per hour of pre-sized recycled asphalt pavement materials, approximately 50,000 lbs gross, having up to 3% moisture content. Larger unit sizes are available in transportable configurations of 10? wide×54? long, and 12? wide×62? long. Alternatively, units are designed and erected as stationary modular systems for higher tonnage capacities from approximately 200 tons per hour to approximately 400 tons per hour and higher.

Abstract: When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that holds the first jig and is mounted on a heat treatment boat is adopted as a heat treatment boat of a vertical heat treatment furnace, the stress concentrated during the heat treatment on a particular portion of the semiconductor substrate can be reduced; in the case of a semiconductor substrate large in the tare stress and having an outer shape of 300 mm being heat treated, or even in the case of the heat treatment being carried out under very high temperature conditions, the slips can be suppressed from occurring. The present invention can be widely applied as a stable heat treatment method of semiconductor substrates.

Abstract: A method and an apparatus for the thermal treatment of metallic workpieces with which gas quenching can be obtained that is low in distortion, even for workpieces with an undulating shape or workpieces that are projectingly stackable are provided. In accordance with the method, after being heated the workpieces are cooled in a quenching chamber with a quenching gas, whereby the quenching gas is intentionally caused to flow around the workpieces by means of guide channels that have a closed lateral surface and that enclose the workpieces along the direction of flow of the quenching gas. The apparatus comprises a quenching chamber in which the workpieces can be cooled with a quenching gas, and wherein guide channels are provided to ensure that the quenching gas flows around the workpieces, the guide channels having a closed lateral surface and enclosing the workpieces along the direction of flow of the quenching gas.

Abstract: The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.

Abstract: Exhaust pressure in an exhaust system 15 that evacuates a processing furnace 2 is determined as absolute pressure by using a differential manometer 23, which measures the exhaust pressure as differential pressure, and a barometer, which measures atmospheric pressure as absolute pressure. An opening of a pressure regulating valve 25 is adjusted based on the absolute exhaust pressure thus determined so that pressure in the processing furnace 2 is regulated.

Abstract: The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.

Abstract: An annealing apparatus includes a gas tight hollow main body, a conveying apparatus and a gas grid. A heating apparatus and a cooling apparatus are installed at an inlet and an outlet of the main body, respectively. The gas grid is installed between the inlet and the outlet to blow the protecting gas into the main body, so as to form a gas screen. The conveying apparatus extends to the inlet and the outlet to convey process material such as heat pipe. Thereby, an open, non-pressure differential environment is established for performing annealing on the process material.

Abstract: A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Abstract: A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Abstract: An apparatus and corresponding method for heating a wafer during processing. The apparatus includes a process chamber enclosing a processing tube defining a processing area. The processing tube includes a first wall and a second wall which define a hollow cavity or passageway therebetween. The second wall includes a plurality of holes or outlets formed thereon which allow environmental communication between the hollow cavity and the processing area. The apparatus also includes a plurality of resistive heating elements positioned adjacent to the processing tube. A thermal energy output from the resistive heating elements is configured to heat a gas flowing through the hollow cavity. The gas flowing through the hollow cavity exits the hollow cavity through the plurality of holes and convectively change the temperature of the wafer disposed in the processing tube.

Abstract: In a firing furnace of plasma display panel, gas distribution piping and gas exhaust piping each have a circular cross section and a uniform diameter along the longitudinal direction of those pipings. The gas distribution piping has a plurality of circular openings formed in a side face thereof and the openings are constructed such that the opening becomes larger in a stepwise fashion in a direction from both end portions to the central portion of the gas distribution piping. Furthermore, the gas exhaust piping has a plurality of elliptic openings formed in a side face thereof and the openings are constructed such that the opening becomes larger in a stepwise fashion in a direction from both end portions to the central portion of the gas exhaust piping.

Abstract: A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Abstract: The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

Abstract: The invention relates to an arrangement and method for heating gases in a gas circulation duct in connection with continuously operated sintering. In the sintering furnace, hot gas is fed in from above the belt in order to sinter the material located on the belt, and part of the gas circulation duct is formed as a burning zone, a burner ring, where the gas is heated. The burner ring comprises at least one burner unit directed inwardly from the circumference of the gas circulation duct.

Abstract: A baking oven for producing baked molded bodies has a baking line that extends along a plane from an input station to an output station. The baking molds are each formed of a bottom baking plate and a top baking plate that is set down onto the top surface of the lower baking plate. The baking molds are transported through the baking line by a lower conveyor that carries the lower mold halves. An upper conveyor above the baking line transports the upper mold halves through their path of revolution above the plane of the baking line with the plates suspended and substantially horizontally aligned and with the baking surfaces always facing down. At the beginning of the baking line, the upper conveyor sets the top baking plates, which are substantially horizontally aligned, down onto the bottom baking plates for forming the baking molds, and at the end of the baking line, it lifts them from the bottom baking plates for opening the baking molds.

Abstract: A method and an apparatus for transporting substrates in all organic light emitting diode (OLED) process is disclosed, which has a transferring chamber provided for transporting substrates between processing modules and the atmosphere condition therein is able to be adjusted to be the same as the processing module by an atmosphere conditioner unit. According to the present invention, the substrates are not contaminated by moisture and the process operation and the factory layout are more flexible. Moreover, the OLED yield is improved.

Abstract: A heating processing chamber has a plate for holding a wafer and a heater heating the plate portion. The plate portion is composed of a plurality of divided plates separated from each other, and thereby the plate is hard to break even through a drastic change in temperature, thus making it possible to increase the durability of the plate.

Abstract: A novel batch-type kiln and a method of use thereof are provided. The kiln comprises a kiln body and a heating chamber disposed within the kiln body, which has a heater disposed therein. A table is disposed at the bottom of the heating chamber, the table having a peripheral portion and an upper surface for supporting an object to be treated. The peripheral portion of the table and a portion of the kiln body define a gap therebetween. This gap forms a gas-introducing path for introducing a gas into the heating chamber. The batch-type kiln is capable of preventing accumulation of a binder component in the gap between the table and the kiln wall.

Abstract: A method of controlling a furnace pressure for preventing air from intruding to a heating furnace, a method of stable operation during low combustion load of heat regenerating burners and a method of measuring concentration of an atmospheric gas in a heating furnace are proposed.

Abstract: A combustion apparatus and process for improved flue gas recirculation wherein the recirculation line penetrates into an exhaust duct, such as the exhaust stack for capturing and directing a portion of said flue gas through the recirculation line which is connected to an air fan inlet which provides induction of the flue gas into the combustion unit. The portion of the recirculation line that extends into the exhaust stack is preferably aerodynamically configured to capture a portion of a flue gas stream without detrimental impedance of the gas flow.

Abstract: This invention provides a heat treatment equipment for an object to be treated capable of removing the desorption gas effectively, and of ensuring the equality of the temperature in the plane of the object to be treated by controlling preferably the turbulent airflow inside the heat treatment chamber. More specifically, this invention provides a heat treatment equipment for an object to be treated comprising a heat treatment chamber 104 having an opening and closing shutter 110 for carrying the object to be treated on the side thereof, an exhaust air way 113 formed along the periphery of the heat treatment chamber 104 including the opening and closing shutter 110 and an exhaust hole 101 for exhausting in the heat treatment chamber 104 from the exhaust air way 113 through the opening and closing shutter 110.

Abstract: The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

Abstract: The multiconveyor convection oven comprises a baking chamber, at least two spaced-apart conveyors mounted transversally one over the other in the baking chamber, a heating chamber behind the baking chamber. A convection system is provided for allowing a circulation of the air from the baking chamber to the heating chamber and back to the baking chamber to cook the food. The convection system comprises air return passages providing a fluid communication between the baking chamber and the heating chamber, a blower housing extending vertically outside the heating chamber on a side thereof, at least two centrifugal blower chambers, one for each conveyor, mounted one over the other within the blower housing. Each centrifugal blower chamber has an air inlet in fluid communication with the heating chamber for drawing air from the baking chamber and an air outlet for throwing back heated air at high pressure.

Abstract: The present invention provides an apparatus for diffusing an impurity into a semiconductor wafer comprising: a diffusion furnace tubs which has a longitudinal center axis extending along a vertical direction and the diffusion tube having at least a gas injector vertically extending in a vicinity of an inner wall of the diffusion furnace tube and the gas injector having a single vertical alignment of a plurality of gas injection nozzles for blowing an impurity gas toward the longitudinal center axis in a first horizontal direction; and a wafer holder for holding at least one semiconductor wafer, the wafer holder being provided in the diffusion furnace tube so that the wafer holder rotates around a rotational axis extending along the vertical axis, whereby the at least one semiconductor wafer rotates around the rotational axis so as to keep a normal of the at least one semiconductor wafer directed in a diametrically outward direction from the rotational center axis.

Abstract: A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part.

Abstract: A system (10) is disclosed for cleaning a vertical furnace (12) pedestal (34) and cap (36) including at least one inlet conduit (40) in fluid communication with a pressurized cleaning medium source (46). The system also includes at least one exhaust conduit (42) in fluid communication with a negative pressure source (48). A boat assembly (30) may be positioned such that the at least one conduit (40) is operable to direct cleaning medium at the boat assembly (30) to dislodge contaminate particles associated with the boat assembly. The exhaust outlet (42) then evacuates the cleaning medium and any dislodged contaminate particles. The system may operate automatically within a closed processing environment and after each process cycle.

Abstract: The invention relates to a method and an apparatus for drying or heat-treating substances or products at a pressure other than atmospheric pressure. The invention relates furthermore to banana chips dried by means of this method and banana powder produced therefrom. For drying or heat-treating, the products to be treated are loaded in transport receptacles which are subsequently charged via charging lock chambers into a treatment chamber and discharged therefrom via discharging lock chambers. For drying or heat treating, at least one microwave source is provided in the treatment chamber. Furthermore, an infrared heating source may be provided. After heat-treating or drying, a resting period may be scheduled. More particularly for this purpose, a vertically-oriented conveying system is provided in the treatment chamber when a longish resting period is involved. The transport receptacle is configured dished and my comprise nets on which the products are applied.

Abstract: A vertical furnace equipped with self-positioning gas injectors for processing wafers and a method for mounting self-positioning gas injectors in the furnace are disclosed. The vertical furnace is constructed by a cylindrical-shaped tube fabricated of quartz having a cavity therein for positioning of a wafer boat; a mounting ring positioning inside the cavity and for mounting the gas injectors thereon; and a plurality of gas injectors each formed in a “L” configuration with a stopper formed on a bottom of the horizontal portions of the gas injectors such that each of the stoppers is formed at a different location and fits only one slot opening formed on the mounting ring.

Abstract: A system for melting and delivering glass to a work area such as spinners for making fiberglass includes a melter with heaters so arranged that the “hot spot” in the molten glass is located away from the walls and corrosion sensitive parts so that the various elements of the melter wear out at substantially the same time. The system is further provided with a dual exhaust arrangement when the melter, conditioner and forehearth are located on the same floor of the plant, the first exhaust being at the juncture of the melter and conditioner, and the second being an alternating replacement for one of the heating/cooling orifices and mechanisms in the conditioner, so as to effectively limit the amount of corrosive volatiles reaching the forehearth.

Abstract: An object of the present invention is to heat a substrate at a uniform temperature all over its surface. The heat processing apparatus of the present invention comprises: a hot plate for putting the substrate on or near its surface; a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface; a surrounding member for surrounding a space between the hot plate and the ceiling; gas flow generation means for generating a gas flow in the space from a circumference of the hot plate to a center of the ceiling; and a temperature control mechanism for controlling a regional temperature of the first region. The temperature control mechanism controls the regional temperature in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate.

Abstract: A modular furnace is fabricated from at least one module having a frame, a removable cover mounted to the frame, exterior cover panels on the frame, and an insulated case fastened to the interior of the module. A conveyor assembly extends through the module. A plurality of process zones, such as heating and cooling zones, are disposed within the module. Field replaceable universal blower assemblies are associated with each process zone. The motor shaft in each blower assembly is provided with a sealed bearing in the motor housing. Insulation within each module is held in place by gas permeable fabric covering large vent openings in cover panels to allow oxygen to diffuse out of the insulation rapidly upon start up.

Abstract: The present invention relates to a reflow furnace for heating a carried circuit module to perform reflow soldering. The reflow furnace has a nozzle 60 for performing an operation of spraying the inert gas on a soldering portion for the circuit module carried into the furnace while the nozzle is moved, maintaining high mounting reliability and high productivity, even if apertures of the carrying inlet and the carrying outlet are large.

Abstract: A continuous pusher furnace includes a product carrier assembly incorporating a traveling gas barrier. The product carrier assembly comprises a plate disposed to receive product thereon and a gas barrier extending upwardly from the plate. The perimeter of the gas barrier is sized and configured to fit within a vestibule between heating chambers in the furnace with a clearance gap with the vestibule selected to increase a gas flow velocity through the vestibule sufficient to overcome a gas diffusion velocity through the vestibule in a direction opposite to the gas flow. In this manner, gas is unable to diffuse into an upstream heating chamber. In an alternative embodiment, an exhaust outlet may also be provided in the vestibule or chamber to exhaust gas from upstream and downstream heating chambers from the furnace.

Abstract: An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.

Abstract: A purge chamber for providing a controlled atmosphere for the treatment of materials comprises a housing within which materials to be treated may be passed through and subjected to a cross-flow of purging gas entering and exiting through a multiplicity of inlets and outlets positioned along the length of the housing. Exiting gas may be recycled and re-entered in combination with fresh gas. In practice, materials to be treated may be conveyed through the chamber while the atmosphere surrounding the materials is continuously exchanged. Flapper doors, spanning the width of the chamber, are positioned along the path of travel of the materials being treated to direct the cross-flow of purging gas and prevent the entry of unwanted gases.

Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.

Abstract: The invention relates to a method of applying heat treatment to a workpiece by means of at least one heat transfer liquid having a boiling point at a given value.

Abstract: An oven comprises a housing provided with heating means, as well as an endless conveyor belt on which products to be heated can be accommodated and can be transported through the housing between an entrance to and exit from said housing, which conveyor belt is guided in the housing helically around each of two drums, which conveyor belt is guided in the housing helically around each of two drums, which are arranged in the housing such that they can be driven about their vertical axis, and is guided straight between two helical paths. The conveyor belt is supported, over at least one of the straight guided paths, by support means that can be moved in the same direction as the conveyor belt.

Abstract: A hot plate unit includes a cover. The cover includes an inner wall and an outlet. There is provided immediately under the outlet a plate having a ventilation hole. The distance between the plate and a main surface is identical to the distance between the main surface and the internal wall face. The hot plate unit has an displacement control valve for restricting displacement at a level in the range from at least 0.1 L/min to at most 1 L/min.

Abstract: A novel batch-type kiln and a method of use thereof are provided. The kiln comprises a kiln body and a heating chamber disposed within the kiln body, which has a heater disposed therein. A table is disposed at the bottom of the heating chamber, the table having a peripheral portion and an upper surface for supporting an object to be treated. The peripheral portion of the table and a portion of the kiln body define a gap therebetween. This gap forms a gas-introducing path for introducing a gas into the heating chamber. The batch-type kiln is capable of preventing accumulation of a binder component in the gap between the table and the kiln wall.

Abstract: The process tube of a vertical heat-treating apparatus for semiconductor wafers has a port at the bottom to be opened and closed by a lid. A sealing mechanism is arranged to seal the connecting portion between the flange of the port and the flange of the lid. The flanges are provided with annular mirror surfaces on the inner side, which face and contact each other to form an inner seal. The flanges are also provided with annular counter surfaces on the outer side, which face each other with a gap therebetween. A metal sheet member is arranged in the gap such that an outer seal is formed by the metal sheet member and the counter surfaces. The metal sheet member has sheets vacuum-stuck onto the counter surfaces, respectively. A buffer space is formed between the inner and outer seals, and is vacuum-exhausted by an exhaust unit.

Abstract: A tube for use in a thermal processing furnace. The tube comprises an elongated cylindrical tube having an inner surface with a plurality of dimples disposed thereon. In one preferred version of the invention, the dimples are formed as an integral part of the inner surface of the cylindrical tube. In another aspect of the invention, the dimpled furnace tube is incorporated into a thermal processing furnace. In this aspect of the invention, the furnace includes a furnace tube having an inner surface describing an elongated cylindrical heated chamber for receiving and processing a plurality of axially aligned spaced apart semiconductor wafers. The inner surface has a plurality of dimples disposed thereon. The furnace further includes an inlet for introducing reactant and/or inert gases into one end of the cylindrical chamber to flow axially within the chamber by the wafers and an outlet for removing the gases from the cylindrical chamber.

Abstract: A continuous furnace for baking ceramic molded parts has a heating area (14), a baking area (16) and a cooling area (18). At least one smoke gas duct (22) extends from the heating area (14) into a combustion chamber (24) and at least one hot air duct (28) leads back from the combustion chamber (24) to the heating area (14). Hot air loaded with binder fractions is extracted from the heating area at one or several spots. The combustion gases are then led into a combustion chamber where they are burned, so that a largely purified hot air may then be led back to the heating area.

Abstract: The oven of the present invention is a low profile, dual .[.conveyer.]. .Iadd.conveyor .Iaddend.oven including an oven cabinet, two closely spaced .[.conveyers.]. .Iadd.conveyors .Iaddend.and an air heating and circulation system. The .[.conveyers.]. .Iadd.conveyors .Iaddend.and the oven cabinet are adapted so that the .[.conveyers.]. .Iadd.conveyors .Iaddend.can be easily removed .[.from the.]. from the front or side of the oven cabinet. The oven cabinet houses the .[.conveyers.]. .Iadd.conveyors.Iaddend., ducts and manifolds which all can be easily removed for cleaning or other maintenance. Each of the .[.conveyers.]. .Iadd.conveyors .Iaddend.include separately controlled drive motors capable of driving .[.the.]. each of .[.conveyers.]. .Iadd.conveyors .Iaddend.at different speeds and in different directions.

Abstract: A convection muffle furnace for brazing and/or annealing a workpiece includes a muffle having towers formed integrally therewith and being mounted movable relative to a top wall of a furnace. Circulation fans are mounted in the towers so as to move along with the muffle during its expansion and contraction for producing forced convection heat transfer.