Abstract: In one embodiment, a semiconductor device includes a first chip including a substrate, a first plug on the substrate, and a first pad on the first plug, and a second chip including a second plug and a second pad under the second plug. The second chip includes an electrode layer electrically connected to the second plug, a charge storage layer provided on a side face of the electrode layer via a first insulator, and a semiconductor layer provided on a side face of the charge storage layer via a second insulator. The first and second pads are bonded with each other, and the first and second plugs are disposed so that at least a portion of the first plug and at least a portion of the second plug do not overlap with each other in a first direction that is perpendicular to a surface of the substrate.

Abstract: A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform one or more stress-free shape measurements on a first wafer, a second wafer, and a post-bonding pair of the first and second wafers. The wafer shape metrology system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements from the wafer shape sub-system; predict overlay between one or more features on the first wafer and the second wafer based on the stress-free shape measurements of the first wafer, the second wafer, and the post-bonding pair of the first wafer and the second wafer; and provide a feedback adjustment to one or more process tools based on the predicted overlay. Additionally, feedforward and feedback adjustments may be provided to one or more process tools.

Abstract: In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

Abstract: Aspects include a hybrid socket dynamic warp indicator for socket connector systems and methods of using the same to measure the warpage of a printed circuit board assembly. The method can include providing a printed circuit board having a plurality of pads and a socket. A warp indicator having a plurality of solder joint connections and a resistor array is electrically coupled to the printed circuit board to build a printed circuit board assembly. The printed circuit board assembly is subjected to a thermal event. A resistance across the resistor array is measured after the thermal event. A number of separations between one or more pads of the printed circuit board and one or more solder joint connections of the warp indicator is determined based on a change in the resistance. A defective warpage condition for the socket is determined based on the number of separations.

Abstract: In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

Abstract: A computer processor includes an on-chip network and a plurality of tiles. Each tile includes an input circuit to receive a voltage signal from the network, and a crossbar array, including at least one neuron. The neuron includes first and second bit lines, a programmable resistor connecting the voltage signal to the first bit line, and a comparator to receive inputs from the two bit lines and to output a voltage, when a bypass condition is not active. Each tile includes a programming circuit to set a resistance value of the resistor, a pass-through circuit to provide the voltage signal to an input circuit of a first additional tile, when a pass-through condition is active, a bypass circuit to provide values of the bit lines to a second additional tile, when the bypass condition is active; and at least one output circuit to provide an output signal to the network.

Abstract: A semiconductor memory device includes a memory and a memory controller configured to control the memory. The memory controller includes a normal operation control part and a repair part. The normal operation control part is configured to control a normal operation of the memory and includes a plurality of storage spaces used while the normal operation is controlled. The repair part is configured to control a repair operation of the memory and stores faulty addresses detected while the repair operation is controlled into the plurality of storage spaces included in the normal operation control part.

Abstract: A method for manufacturing an electronic device includes the following steps. A substrate including a main region and a peripheral region is provided. A seed layer is formed on the substrate. A circuit structure layer is formed on the seed layer, and the circuit structure layer has a plurality of chip connection structures disposed on the main region and a plurality of test circuit structures disposed on the peripheral region. The chip connection structures and the test circuit structures are physically separated from each other, and the chip connection structures and the test circuit structures are electrically connected through the seed layer. A circuit test process is performed and includes applying a predetermined voltage to the test circuit structures to test the chip connection structures. A test result is obtained to determine whether a chip is electrically connected to the chip connection structures.

Abstract: A semiconductor substrate has a back face and a front face and includes a semiconductor well that is electrically isolated from the semiconductor substrate. A device is configured to detect a thinning of the semiconductor substrate from the back face. The device includes at least one trench that extends within the semiconductor well between two peripheral locations from the front face down to a location situated at a distance from a bottom of the semiconductor well. The trench is electrically isolated from the semiconductor well. A detection circuit is configured to measure a physical quantity representative of well electrical resistance between two contact areas respectively situated on either side of the at least one first trench.

Abstract: A first radio frequency scan of a plurality of electronic circuit devices fixed to a structural component of a physical structure can be initiated. Data can be received from each electronic circuit device that is scanned, the data received from each electronic circuit device indicating a first measured electrical impedance of a respective conductor connected to the electronic circuit device and an identifier assigned to the electronic circuit device. For each of the plurality of electronic circuit devices that are scanned, the received data can be stored to a first memory. The data for the electronic circuit devices forms a baseline measurement of the electronic circuit devices to which impedance data gathered from subsequent radio frequency scans of the electronic circuit devices is compared to determine whether any of the conductors of the electronic circuit devices have deformed or broken.

Abstract: The present disclosure provides a method and a system for testing semiconductor device. The method includes the following operations. A wafer having an IC formed thereon is provided. The IC is energized by raising the voltage of the IC to a first voltage level during a first period. A stress signal is applied to the IC. The stress signal includes a plurality of sequences during a second period subsequent to the first period. Each of the sequence has a ramp-up stage and a ramp-down stage. The stress signal causes the voltage of the IC to fluctuate between a second voltage level and a third voltage level. Whether the IC complies with a test criterion is determined after applying the stress signal.

Abstract: Device and method for analyzing a probe, in particular for analyzing a symmetrical, differential probe. A ground-based test signal is provided to a main signal line, wherein the main signal line is terminated by a predetermined impedance. Furthermore, at least one additional signal line is provided, wherein a further impedance is arranged between the additional signal line and the ground. Accordingly, a differential probe may measure a differential signal between the main signal line and the additional signal line. Hence, no grounded signal is provided to the probe. This measurement of the probe can be compared with a reference signal directly acquired on the main signal line. In this way, characteristic values such as impedance and/or frequency response of the probe can be determined.

Abstract: Described is an apparatus which comprises: a first array of reliability monitors including first and second reliability monitors, wherein the first and second reliability monitors include first and second switches and first and second conductors, wherein the first and second switches are coupled to first and second conductors, respectively; and first and second comparators coupled to the first and second switches, respectively. Described is an apparatus which comprises: a conductor formed on a metal layer; a switch having a source terminal coupled to the conductor, and a drain terminal coupled to a power supply node, wherein the switch is controllable by a controller; and a comparator having a first input coupled to the power supply node and to the switch, wherein the comparator includes a second input coupled to an adjustable reference.

Abstract: Each of a plurality electronic circuit devices fixed to a structural component of a physical structure can be scanned a first time, using a radio frequency (RF) scanner to receive, from each of the plurality of electronic circuit devices, first data indicating a first measured electrical impedance of a respective conductor connected to the electronic circuit device and an identifier assigned to the electronic circuit device. For each of the plurality of electronic circuit devices, the first data indicating the first measured electrical impedance and the identifier assigned to the electronic circuit device can be stored to a first memory. The first data indicating the first measured electrical impedance and the identifier for each of the electronic devices can form a baseline measurement of the electronic circuit devices.

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Abstract: A semiconductor substrate has a back face and a front face and includes a semiconductor well that is electrically isolated from the semiconductor substrate. A device is configured to detect a thinning of the semiconductor substrate from the back face. The device includes at least one trench that extends within the semiconductor well between two peripheral locations from the front face down to a location situated at a distance from a bottom of the semiconductor well. The trench is electrically isolated from the semiconductor well. A detection circuit is configured to measure a physical quantity representative of well electrical resistance between two contact areas respectively situated on either side of the at least one first trench.

Abstract: In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.

Abstract: Improved processes for manufacturing semiconductor wafers, chips, or dies utilize in-line data obtained from non-contact electrical measurements (“NCEM”) of fill cells that contain structures configured to target/expose a variety of open-circuit, short-circuit, leakage, and/or excessive resistance failure modes. Such processes include evaluating one or more Designs of Experiments (“DOEs”), each comprised of multiple NCEM-enabled fill cells, in at least two variants, targeted to the same failure mode. Such DOEs include multiple means/steps for enabling non-contact (NC) detection of GATECNT-GATE via opens.

Abstract: Semiconductor test devices and methods for fabricating the same may be provided. The semiconductor test device may include a first thermal test flip chip cell including a first heater and a first sensor, and a test substrate formed under the first thermal test flip chip cell. The first thermal test flip chip cell may include a plurality of first bumps arranged on a bottom surface of the first thermal test flip chip cell and be configured to be electrically connected to the first heater and the first sensor. The test substrate may include a first ball array arranged on a bottom surface of the test substrate in a first direction and be configured to be electrically connected to the plurality of first bumps, which are electrically connected to the first heater and the first sensor.

Abstract: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error.

Abstract: An integrated circuit can have plural core circuits, each having a test access port that is defined in IEEE standard 1149.1. Access to and control of these ports is though a test linking module. The test access ports on an integrated circuit can be arranged in a hierarchy with one test linking module controlling access to plural secondary test linking modules and test access ports. Each secondary test linking module in turn can also control access to tertiary test linking modules and test access ports. The test linking modules can also be used for emulation.

Abstract: Functional circuits and cores of circuits are tested on integrated circuits using scan paths. Using parallel scan distributor and collector circuits for these scan paths improves test access of circuits and cores embedded within ICs and reduces the IC's power consumption during scan testing. A controller for the distributor and collector circuits includes a test control register, a test control state machine and a multiplexer. These test circuits can be connected in a hierarchy or in parallel. A conventional test access port or TAP can be modified to work with the disclosed test circuits.

Abstract: A semiconductor device includes: a combination circuit; and a scan circuit, wherein the scan circuit includes: a first scan chain in which a plurality of first flip-flops are connected in series; and a second scan chain in which a plurality of second flip-flops are connected in series. The first scan chain is configured to capture first output data of at least one of the first flip-flops of the second scan chain, and the second scan chain is configured to capture second output data of at least one of the second flip-flops of the first scan chain.

Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

Abstract: A semiconductor device, such as a semiconductor die, is disclosed including embedded temperature sensors for scanning the junction temperature, Tj, at one or more locations of the semiconductor die while the die is operating. Once a temperature of a hot spot is detected that is above a temperature specified for the die or package containing the die, the die/package may be discarded. Alternatively, the functionality of the die may be altered in a way that reduces the temperature of the hot spots.

Abstract: A radio-frequency circuit has a signal processing unit for processing a symmetrical input signal, two signal inputs for receiving the symmetrical input signal, a connection which is used as a ground point for the symmetrical signal, and a line which connects the signal inputs and has a length which essentially corresponds to an odd-numbered multiple of half the wavelength of the input signal. A method for testing a radio-frequency circuit having a signal processing unit for processing a symmetrical input signal is additionally provided.

Abstract: A technique is provided for base recognition in an integrated device is provided. A target molecule is driven into a nanopore of the integrated device. The integrated device includes a nanowire separated into a left nanowire part and a right nanowire part to form a nanogap in between, a source pad connected to the right nanowire part, a drain pad connected to the left nanowire part, and the nanopore. The source pad, the drain pad, the right nanowire part, the left nanowire part, and the nanogap together form a transistor. The nanogap is part of the nanopore. A transistor current is measured while a single base of the target molecule is in the nanogap of the nanopore, and the single base affects the transistor current. An identity of the single base is determined according to a change in the transistor current.

Abstract: In one embodiment, a semiconductor package includes a clip frame with a first clip having a first support structure, a first lever, and a first contact portion, which is disposed on a front side of the semiconductor package. The first support structure is adjacent an opposite back side of the semiconductor package. The first lever joins the first contact portion and the first support structure. A first die is disposed over the first support structure of the first clip. The first die has a first contact pad on the front side of the semiconductor package. An encapsulant material surrounds the first die and the first clip.

Abstract: A method performs electrical testing and assembly of an electronic device on a wafer and comprising a pad made in an oxide layer covered by a passivation layer. The method includes connecting the electronic device to a testing apparatus; providing said electronic device with a metallization layer extending on the passivation layer from the pad to a non-active area of said wafer. The method comprises-performing the electrical testing on wafer of the electronic device by placing a probe of on a portion of the extended metallization layer; performing the cut of said wafer, reducing the extension of the metallization layer to the edge of the electronic device; embedding the device inside a package, forming on the metallization layer an electrical connection configured to connect the metallization layer to a circuit in said package.

Abstract: Structures and methods are disclosed for evaluating the effect of a process environment variation. A structure and related method are disclosed including a plurality of electrical structures arranged in a non-collinear fashion for determining a magnitude and direction of a process environment variation in the vicinity of the plurality of electrical structures. The plurality of structures may include a first polarity FET coupled to a second polarity FET, each of the first polarity FET and the second polarity FET are coupled to a first pad and a second pad such that the structure allows independent measurement of the first polarity FET and the second polarity FET using only the first and second pads. Alternatively, the electrical structures may include resistors, diodes or ring oscillators. Appropriate measurements of each electrical structure allow a gradient field including a magnitude and direction of the effect of a process environment variation to be determined.

Abstract: It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected.

Abstract: A temperature controlled substrate support assembly used for processing a substrate in a vacuum chamber of a semiconductor processing apparatus. The substrate support assembly comprises a top plate for supporting the substrate. A base plate is disposed below the top plate wherein the base plate comprises a cavity in an upper surface of the base plate. A cover plate is disposed between the top plate and the base plate. At least one thermoelectric module is in the cavity in the upper surface of the base plate wherein the at least one thermoelectric module is in thermal contact with the top plate and the base plate, and the at least one thermoelectric module is maintained at atmospheric pressure.

Abstract: A micro-channel structure having variable depths includes a substrate and a cured layer formed on the substrate. At least first and second micro-channels are embossed in the cured layer. The first micro-channel has a bottom surface defining a first depth and the second micro-channel has a bottom surface defining a second depth different from the first depth. A cured electrical conductor is making a micro-wire is formed in each of the first and second micro-channels over their respective bottom surfaces.

Abstract: A method for fabricating an integrated circuit (IC) product and IC product formed thereby. The method includes designing an IC package having a plurality of IC connection sets, each configured to be connected to a corresponding IC selected from among a plurality of ICs, each having different functionality. Various IC products can be produced depending upon which selected IC is connected to its corresponding connection set, and the IC package can be cut during design to exclude IC connection sets corresponding to ICs that are not selected. By testing the complete IC package, a portion of the complete IC package can be fabricated, cut from the complete IC package, with significantly reduced design and testing requirements.

Abstract: A light-guiding cover structure includes a top cover unit and a light-guiding unit. The top cover unit has a plurality of receiving spaces formed therein. The light-guiding unit includes a plurality of light-guiding groups, wherein each light-guiding group includes a plurality of optical fiber cables received in the corresponding receiving space, and each optical fiber cable has two opposite ends exposed from the bottom surface of the top cover unit and respectively facing at least one light-emitting device and at least one light-sensing device that have been disposed under the top cover unit. Therefore, the optical fiber cables received in the corresponding receiving space, thus when the light-guiding cover structure is applied to the LED package chip classification system, the aspect of the LED package chip classification system can be enhanced.

Abstract: An electronic device package 100 comprising a lead frame 105 having at least one lead 110 with a notch 205. The notch includes at least one reentrant angle 210 of greater than 180 degrees and the notch is located distal to a cut end 1010 of the lead.

Abstract: A method of thin printed circuit board wet process consistency on the same carrier, and more particularly to a printed circuit board in the developing, copper plating, stripping, etching and other wet processes uses the same frame as a carrier from the beginning to the end of the wet process, such that the thin printed circuit board is conducted a continuous and automatic wet process to avoid disassembly, storage and transportation between each process. Moreover, when using the flame, the thin printed circuit board is smooth and flattening in the wet process for avoiding “water effect,” the effective area is not exposed to any mechanical members for preventing scratches, and there are point contacts between the thin printed circuit board and the frame for preventing chemical residue. Accordingly, the present invention can not only enhance the yield of the thin printed circuit board but also shorten the production time.

Abstract: Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system. The quantity and location of the sensors are optimized to have maximum sensitivity to known process variations. In general, the sensor models a behavior (e.g., aging process) of the location (e.g., functional block) in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted.

Abstract: An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is disposed on a surface of the semiconductor unit for electrical conduction. Each of the metal fingers includes a pad area for forming an electrical contact. The optoelectronic device includes a plurality of pad areas that is available for connection to a bus bar, wherein each of the metal fingers is connected to a corresponding pad area for forming an electrical contact.

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

Abstract: A semiconductor device includes: a semiconductor substrate including an active element formation face on which an active element is formed; detection electrodes detecting a remaining amount of ink by being wet in the ink; an antenna transmitting and receiving information; a storage circuit storing information relating to the ink; and a control circuit controlling the detection electrodes, the antenna, and the storage circuit.

Abstract: The present invention features a method for fabricating a lead-frame package, having a first, second, third and fourth electrically conductive structures with a pair of semiconductor dies disposed therebetween defining a stacked structure. The first and second structures are spaced-apart from and in superimposition with the first structure. A semiconductor die is disposed between the first and second structures. The semiconductor die has contacts electrically connected to the first and second structures. A part of the third structure lies in a common plane with a portion of the second structure. The third structure is coupled to the semiconductor die.

Abstract: A multilayer interconnect structure is formed by, providing a substrate (40) having thereon a first dielectric (50, 27) for supporting a multi-layer interconnection (39) having lower conductor MN (22, 23), upper conductor MN+1 (34, 35), dielectric interlayer (DIL) (68) and interconnecting via conductor VN+1/N (36, 36?). The lower conductor MN (22, 23) has a first upper surface (61) located in a recess below a second upper surface (56) of the first dielectric (50, 27). The DIL (68) is formed above the first (61) and second (56) surfaces. A cavity (1263) is etched through the DIL (68) from a desired location (122) of the upper conductor MN+1 (34), exposing the first surface (61). The cavity (1263) is filled with a further electrical conductor (80) to form the upper conductor MN+1 (34) and the connecting via conductor VN+1/N (36, 36?) making electrical contact with the first upper surface (61).

Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

Abstract: A system, method and apparatus may comprise a wafer having a plurality of spiral test structures located on the kerf of the wafer. The spiral test structure may comprise a spiral connected at either end by a capacitor to allow the spiral test structure to resonate. The spiral structures may be located on a first metal layer or on multiple metal layers. The system may further incorporate a test apparatus having a frequency transmitter and a receiver. The test apparatus may be a sensing spiral which may be placed over the spiral test structures. A controller may provide a range of frequencies to the test apparatus and receiving the resonant frequencies from the test apparatus. The resonant frequencies will be seen as reductions in signal response at the test apparatus.

Abstract: A method for manufacturing an electronic multi-chip module that involves stacking at least six tested devices to form the module. These devices may be individually tested prior to assembling the electronic module. After individually testing the devices, the devices may be stacked one on top of the other to form an electronic multi-chip module having at least six stacked devices. Other embodiments may be described and claimed.

Abstract: A pattern of conductive ink is disposed on the topside of the unsingulated integrated circuits of a wafer, and, typically after wafer probing, the pattern of conductive ink is removed. The conductive ink pattern provides an electrical pathway between bond pads on an integrated circuit and large contact pads disposed on the topside of the integrated circuit. Each of the large contact pads is much greater in area than the corresponding bond pads, and are spaced apart so that the pitch of the large contact pads is much greater than that of the bond pads. In one aspect of the present invention, the conductive ink includes a mixture of conductive particles and wafer bonding thermoset plastic. In another aspect of the present invention, the conductive ink is heated and disposed on a wafer by an ink jet printing system.

Abstract: An interposer to be mounted with an integrated circuit to be a test object is provided with a switch and a probe to detect an electric current corresponding to individual terminals of the integrated circuit. A test pattern signal is then inputted to the integrated circuit through a test substrate as a switch that is connected to a power supply terminal of the integrated circuit and that is turned off. If the integrated circuit normally operates and the current values of all the terminals of the integrated circuit are within a tolerance, the power supply terminal connected to the turned-off switch is identified as a terminal that may be removed.

Abstract: The present invention provides in-situ positioning of a sensor within each functional block, as well as at critical locations, of a semiconductor system. Sensor quantity and location is optimized for maximum sensitivity to known process variations. The sensor models a behavior of the location in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted. Based on the output, one or more functional blocks are modified to reduce semiconductor system gradation in real-time.

Abstract: A multilayer interconnect structure is formed by, providing a substrate having thereon a first dielectric for supporting a multi-layer interconnection having lower conductor MN, upper conductor MN+1, dielectric interlayer (DIL) and interconnecting via conductor VN+1/N. The lower conductor MN has a first upper surface located in a recess below a second upper surface of the first dielectric. The DIL is formed above the first and second surfaces. A cavity is etched through the DIL from a desired location of the upper conductor MN+1, exposing the first surface. The cavity is filled with a further electrical conductor to form the upper conductor MN+1 and the connecting via conductor VN+1/N making electrical contact with the first upper surface. A critical dimension between others of lower conductors MN and the via conductor VN+1/N is lengthened. Leakage current and electro-migration there-between are reduced.