Optical Characteristic Sensed Patents (Class 438/16)
  • Patent number: 10269846
    Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: April 23, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Dajiang Yang
  • Patent number: 10222321
    Abstract: A measurement method for a laminate substrate is provided. The laminate substrate has: a base substrate; an absorption layer; and a measurement-target layer in this order. The measurement-target layer has a single measurement-target monolayer or a plurality of measurement-target monolayers. The method includes: emitting incident light including light with a wavelength shorter than a threshold wavelength from a side on which the measurement-target layer is positioned, and measuring reflected light and acquiring mutually independent 2n (n is a layer count of the measurement-target monolayers included in the measurement-target layer and is an integer equal to one or larger) or more reflected light-related values for wavelengths equal to the threshold wavelength or shorter; and calculating values related to the measurement-target monolayers for each measurement-target monolayer included in the measurement-target layer using the 2n or more reflected light-related values.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: March 5, 2019
    Inventors: Taiki Yamamoto, Taketsugu Yamamoto, Kenji Kasahara
  • Patent number: 9972384
    Abstract: An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: May 15, 2018
    Assignee: SK hynix Inc.
    Inventors: Sook-Joo Kim, Jae-Geun Oh, Keum-Bum Lee, Hyung-Suk Lee
  • Patent number: 9871060
    Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer. The third semiconductor is provided between the first semiconductor layer and the second semiconductor layer. A first transistor includes a first gate electrode and a first amorphous semiconductor layer. The first gate electrode and the first amorphous semiconductor layer overlap in a first direction. The first direction is from the first semiconductor layer toward the second semiconductor layer. The first gate electrode is provided between the second semiconductor layer and the first amorphous semiconductor layer.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: January 16, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Nobuyoshi Saito, Tomio Ono, Shigeya Kimura, Jumpei Tajima, Kentaro Miura, Shintaro Nakano, Yuya Maeda
  • Patent number: 9785059
    Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: October 10, 2017
    Inventors: Boaz Brill, Moshe Finarov, David Scheiner
  • Patent number: 9776280
    Abstract: A laser welding method is capable of easily restraining poor welding when spatters adhere to a protective glass of an optical system. The laser welding method includes a step of calculating a decrease-amount of the laser power before laser welding is performed by irradiating a welding portion of a workpiece with the laser beam having a predetermined power. The step of calculating the decrease-amount includes irradiating the welding portion with an inspecting laser beam having a power smaller than the predetermined power, receiving a return beam of the inspecting laser beam, measuring an intensity of the return beam, and comparing the intensity of the return beam with a standard intensity to calculate an amount of decrease in power of the inspecting laser beam at the welding portion.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: October 3, 2017
    Inventors: Shuhei Ogura, Kazuyuki Ogusu, Jyunichiro Makino, Hiroaki Kishi, Kousuke Tsuji
  • Patent number: 9711421
    Abstract: Improved processes for manufacturing wafers, chips, or dies utilize in-line data obtained from non-contact electrical measurements (“NCEM”) of fill cells that contain structures configured to target/expose a variety of open-circuit, short-circuit, leakage, or excessive resistance failure modes, including GATE-snake-open and/or GATE-snake-resistance failure modes. Such processes may involve evaluating Designs of Experiments (“DOEs”), comprised of multiple NCEM-enabled fill cells, in at least two variants, all targeted to the same failure mode(s).
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: July 18, 2017
    Assignee: PDF Solutions, Inc.
    Inventors: Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De, Kelvin Doong, Hans Eisenmann, Timothy Fiscus, Jonathan Haigh, Christopher Hess, John Kibarian, Sherry Lee, Marci Liao, Sheng-Che Lin, Hideki Matsuhashi, Kimon Michaels, Conor O'Sullivan, Markus Rauscher, Vyacheslav Rovner, Andrzej Strojwas, Marcin Strojwas, Carl Taylor, Rakesh Vallishayee, Larg Weiland, Nobuharu Yokoyama
  • Patent number: 9711360
    Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: July 18, 2017
    Inventors: Ziqing Duan, Kwangduk Douglas Lee, Abdul Aziz Khaja, Amit Kumar Bansal, Bok Hoen Kim, Prashant Kumar Kulshreshtha
  • Patent number: 9698041
    Abstract: Substrate temperature control apparatus including optical fiber temperature control are described. Substrate temperature control apparatus includes a base, a thermal contact member proximate to the base, and a plurality of optical fibers adapted to provide light-based heating extending laterally between the base and thermal contact member. Substrate temperature control systems and electronic device processing systems and methods including optical fiber temperature control are described, as are numerous other aspects.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: July 4, 2017
    Inventors: Matthew Busche, Wendell Boyd, Jr., Vijay D. Parkhe, Michael R. Rice, Leon Volfovski
  • Patent number: 9690211
    Abstract: The present invention provides an exposure system including a light source and a carrier which are arranged opposite to each other. The carrier is used for placing a to-be-exposed film, and the to-be-exposed film is to be exposed to light emitted from the light source. The exposure system further includes a thickness measurement unit and a light intensity adjustment unit which are electrically connected to each other. The thickness measurement unit is used for measuring thicknesses of different regions of the to-be-exposed film, and the light intensity adjustment unit is used for adjusting exposure-light intensities of different regions of the to-be-exposed film according to the thicknesses of corresponding regions of the to-be-exposed film measured by the thickness measurement unit.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: June 27, 2017
    Inventors: Dawei Shi, Jian Guo
  • Patent number: 9659249
    Abstract: Technical solutions are described for forming a semiconductor device for a crosspoint array that implements a pre-programmed neural network. An example method includes sequentially depositing a semiconducting layer, a top insulating layer, and a shunting layer onto a base insulating layer. The method further includes etching selective portions of the top insulating layer corresponding to resistance values associated with weights of the crossbar that implements the neural network.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: May 23, 2017
    Inventor: Matthew W. Copel
  • Patent number: 9634269
    Abstract: The present invention provides a conductive flexible substrate and a manufacture method thereof and an OLED display device and a manufacture method thereof. The conductive flexible substrate comprises a flexible substrate (1), mesh conductive lines (2) located on the flexible substrate (1) and embossing from a surface of one side of the flexible substrate (1), and a conductive layer (3) filling among the mesh conductive lines (2); a surface of one side of the flexible substrate (1) away from the mesh conductive lines (2) and the conductive layer (3) is flat. The conductive flexible substrate is capable of promoting the conductivity of the flexible substrate, and applying the conductive flexible substrate to an OLED display device can solve the issue of low conductivity of anodes in the OLED display device.
    Type: Grant
    Filed: February 8, 2015
    Date of Patent: April 25, 2017
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventors: Qinghua Zou, Yifan Wang, Taipi Wu
  • Patent number: 9627282
    Abstract: A method of manufacturing a semiconductor device includes: forming lower-layer wirings for a transistor, a circuit element and a plurality of contact pads on a substrate independently of each other; forming a first feed layer over an entire surface of the substrate on which the lower-layer wirings are formed; patterning the first feed layer to form a test pattern connecting terminals of the transistor to the separate contact pads independently of the circuit element; making a test on the transistor in a stand-alone state by using the contact pad and the test pattern; and after the test, connecting the transistor and the circuit element to form a circuit.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: April 18, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tasuku Sumino, Takayuki Hisaka, Takahiro Nakamoto
  • Patent number: 9589086
    Abstract: A method for measuring a surface structure of a chip or a wafer is provided that includes obtaining an image of the surface structure of the chip, and then performing an image extraction on the image to convert the extracted image into a first circuit design file. A standard image is selected to convert into a second circuit design file, and then the standard image and at least one target in the image are compared to obtain a difference therebetween. According to the difference, at least one data of the surface structure may be made, wherein the data is selected from one of line edge roughness (LER), line width roughness (LWR), contact edge roughness (CER), critical dimension (CD), bias, 3 sigma, maximum, minimum, etc. and repeating defect.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: March 7, 2017
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Tuung Luoh, Hsiang-Chou Liao, Ling-Wuu Yang, Ta-Hone Yang, Kuang-Chao Chen
  • Patent number: 9588289
    Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: March 7, 2017
    Assignee: International Business Machines Corporation
    Inventors: Yann A. N. Astier, Ning Li, Devendra K. Sadana, Joshua T. Smith, William T. Spratt
  • Patent number: 9536762
    Abstract: A thermal processing apparatus is provided in accordance with some embodiments. The thermal processing apparatus includes a heating source for transmitting incident radiation to a work piece having a circuit pattern formed on a front surface; a radiation sensor configured to receive light radiated from the front surface of the work piece; and a controller coupled to the radiation sensor, the controller being designed to control the heating source to reduce temperature variation of the work piece.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: January 3, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun Hsiung Tsai, Kei-Wei Chen
  • Patent number: 9406822
    Abstract: A process for the production of an optoelectronic device, such as a photovoltaic cell or a light emitting diode is disclosed. The process comprises providing a substrate having a conductive coating on at least one surface, the conductive coating having an initial roughness and at least one or more spikes, and applying a functional component to the coated surface of the substrate. The surface of the substrate having the conductive coating has been subjected to a polishing step using at least one brush to reduce the height of the spikes inherent to the conductive coating and to give the conductive coating a final roughness. By reducing the spikes there is less potential for the optoelectronic device to suffer from electrical shunts which reduce the efficiency of the device.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: August 2, 2016
    Assignee: Pilkington Group Limited
    Inventors: David Lawrence Bamber, Paul David Warren, Troy Darrell Manning, Neil McSporran, Paul Arthur Holmes
  • Patent number: 9267898
    Abstract: An optical inspection apparatus is provided which suppresses the influence of quantum noise including: light irradiator which irradiates a sample with light; reference light emitter which emits reference light; light interference unit which generates interfering light through interference between transmitted light, scattered light, or reflected light from the sample irradiated with light by the light irradiator, and the reference light emitted by the reference light emitter; light detector which detects the interfering light generated by the light interference unit; defect identifier which identifies the presence or absence of a defect based on a detection signal obtained by the light detector detecting the interfering light; and light convertor which converts at least the state of the transmitted, scattered, or reflected light from the sample, the state of the reference light emitted by the reference light emitter, or the state of the interfering light generated by the light interference unit.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: February 23, 2016
    Assignee: HITACHI, LTD.
    Inventors: Kenji Nakahira, Toshifumi Honda, Toshihiko Nakata
  • Patent number: 9255789
    Abstract: Methods for measuring a thickness of an object including acquiring at least one of a wavelength domain spectrum for an amplitude ratio (?) and a phase difference (?) of reflected light from a film material, converting the wavelength domain spectrum into a 1/wavelength domain spectrum, acquiring a resulting spectrum by performing fast fourier transform (FFT) on the 1/wavelength domain spectrum, and measuring a thickness of the film material from the resulting spectrum may be provided.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: February 9, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-Ik Park, Il-Hwan Nam, Kwan-Woo Ryu
  • Patent number: 9250196
    Abstract: There are provided a susceptor having a recessed wafer mounting section, in which a semiconductor wafer is mounted and which is configured to include a circular bottom portion and a side wall portion, on an upper surface, a reaction chamber in which the susceptor is provided, an imaging unit that is provided above the reaction chamber and images the semiconductor wafer and the wafer mounting section, and an image analysis unit that analyzes the deviation of the semiconductor wafer from the wafer mounting section on the basis of an image captured by the imaging unit.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: February 2, 2016
    Assignee: Epicrew Corporation
    Inventors: Akira Okabe, Masanori Tanoguchi, Junichi Tomizawa
  • Patent number: 9245809
    Abstract: The present invention generally relates to methods measuring pinhole determination. In one aspect, a method of measuring pinholes in a stack, such as a TFT stack, is provided. The method can include forming an active layer on a deposition surface of a substrate, forming a dielectric layer over the active layer, delivering an etchant to at least the dielectric layer, to etch both the dielectric layer and any pinholes formed therein and optically measuring the pinhole density of the etched dielectric layer using the active layer.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: January 26, 2016
    Inventors: Dong-Kil Yim, Tae Kyung Won, Seon-Mee Cho
  • Patent number: 9240359
    Abstract: Embodiments of the present disclosure provide methods for forming stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips using precise photoresist trimming process endpoint control. In one example, a method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, directing an optical signal to a surface of the patterned photoresist layer while trimming the patterned photoresist layer, collecting a return reflected optical signal reflected from the photoresist layer, and determining a trimming endpoint by analyzing the return optical signal reflected from the photoresist layer.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: January 19, 2016
    Inventor: Lei Lian
  • Patent number: 9228114
    Abstract: A composition for chemical mechanical polishing includes a plurality of particles and a plurality of abrasive particles. Each of the plurality of particles includes a body and a functional group. The body is configured to transfer energy of an incident light into a plasmonic wave. The functional group is configured to bind onto a metal containing layer.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: January 5, 2016
    Inventors: Chung-Liang Cheng, Yen-Yu Chen, Chang-Sheng Lee, Wei Zhang
  • Patent number: 9201027
    Abstract: Evaluating a semiconductor wafer may include recording a first intensity of a reflection of an X-ray beam onto a test area on a substrate of the semiconductor wafer at a detector as the X-ray beam is projected substantially perpendicular to a length of expected, periodic structures in the test area and at an angle defined between the X-ray beam and a surface of the test area. Second intensities may be recorded of the reflection of the X-ray beam onto the test area as the X-ray beam is projected onto the test area at increments from the angle. Intensity peaks in the recordings of the first and second intensities are identified and, based on positions of the intensity peaks relative to the test area, a peak spacing between the plurality of expected, periodic structures is determined indicative of pitch walking or epitaxial merge.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: December 1, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Kriteshwar K. Kohli, Patrick E. Lindo, Anita Madan, Teresa L. Pinto
  • Patent number: 9166075
    Abstract: A solar cell includes a silicon substrate, an aluminum electrode that collects electricity from the rear surface of the silicon substrate, and a silver electrode that extracts output from the aluminum electrode. The aluminum electrode includes an opening formed on the rear surface of the silicon substrate. On a side of the opening is formed a notch that recesses parallel to the direction in which principal stress acts in a plane of the silicon substrate. The silver electrode covers at least the opening and the notch of the aluminum electrode.
    Type: Grant
    Filed: June 27, 2006
    Date of Patent: October 20, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventors: Daisuke Echizenya, Hiroo Sakamoto, Shiro Takada, Hiroaki Morikawa, Hisashi Tominaga
  • Patent number: 9165844
    Abstract: The invention relates to a method for examining a wire-sawn silicon substrate for a solar cell. The method includes irradiating the silicon substrate with an infrared radiation, detecting the infrared radiation transmitted through the silicon substrate, and analyzing the detected infrared radiation for characterizing the crystal orientation of the silicon substrate. The invention in addition relates to a device for carrying out such a method, and a method for manufacturing a solar cell.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: October 20, 2015
    Inventors: Alexander Fulle, Andreas Krause, Lamine Sylla
  • Patent number: 9159599
    Abstract: Apparatus for chemically etching a workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: October 13, 2015
    Assignee: SPTS Technologies Limited
    Inventors: Oliver Ansell, Anthony Barrass, Paul Bennett, David Tossell
  • Patent number: 9153617
    Abstract: An embodiment is an imaging apparatus including a plurality of unit cells. The imaging apparatus includes a first conductive member electrically connected to gates of the plurality of first transfer transistors, a second conductive member electrically connected to gates of the plurality of second transfer transistors, a third conductive member disposed adjacently to the first conductive member in a same wiring layer as the first conductive member and electrically connected to a plurality of nodes each included in respective one of the plurality of unit cells, and a fourth conductive member disposed adjacently to the second conductive member in a same wiring layer as the second conductive member. An opposing length of the first conductive member and the third conductive member is longer than an opposing length of the second conductive member and the fourth conductive member.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: October 6, 2015
    Inventors: Kotaro Abukawa, Itsutaku Sano
  • Patent number: 9134362
    Abstract: Disclosed is a method for automatically sorting LEDs (light emitting diode) according to electrostatic resistance and a system using the same. The system includes a transport carrier for laying LEDs and passing LEDs through an electrostatic discharging zone, a lightening evaluating zone, and a sorting zone in sequence. An electrostatic discharging device discharges an electrostatic power to the LED in the electrostatic discharging zone. Furthermore, a lighting device inputs a lightening power to the LED in the lightening evaluating zone. Moreover, an evaluating device in the evaluating zone generates an evaluating signal to a sorting device in the sorting zone according to the lighting condition of the LED for allowing the sorting device to sort LEDs according to electrostatic resistance. Thereby the reliability both for the failure rate and the detection rate can be raised.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: September 15, 2015
    Assignee: Taiwan Power Testing Technology Co., Ltd.
    Inventor: Yu-Chiang Lin
  • Patent number: 9123584
    Abstract: A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: September 1, 2015
    Assignee: FIRST SOLAR, INC
    Inventors: Arnold Allenic, Stephan Paul George, II, Sreenivas Jayaraman, Oleh Petro Karpenko, Chong Lim
  • Patent number: 9111810
    Abstract: A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: August 18, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hideki Kitagawa, Shinya Tanaka, Hajime Imai, Atsuhito Murai, Mitsunori Imade, Tetsuo Kikuchi, Kazunori Morimoto, Junya Shimada, Jun Nishimura
  • Patent number: 9105751
    Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
    Type: Grant
    Filed: November 11, 2011
    Date of Patent: August 11, 2015
    Inventors: David L. Harame, Anthony K. Stamper
  • Patent number: 9048782
    Abstract: Provided is a method for evaluating a solar cell incorporated into a solar module. A PL evaluation step is performed. The PL evaluation step is a step for evaluating the solar cell to be evaluated among a plurality of solar cells (10) by illuminating the solar cell (10) with light from a light source (20) and detecting the intensity of photoluminescent light (L2) emitted by the solar cell (10). The light is irradiated while a light-blocking member (21) is provided between the solar module (1) and the light source (20) so that light from the light source (20) is not incident on portions of the solar module other than the solar cell (10) to be evaluated.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: June 2, 2015
    Inventor: Toshiaki Baba
  • Patent number: 9048397
    Abstract: A method of disposing a phosphor material on an LED such that the LED emits white light and adjusting the quantity of phosphor material such that the white light meets a color target. A formulated procedure is used to determine the adjustment required, and includes a correlation between a change in position of a color of an LED on a CIE diagram and a known quantity of phosphor material added to the LED.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: June 2, 2015
    Assignee: Carsem (M) SDN. BHD.
    Inventors: Edmund Sales Cabatbat, Lily Khor, Ho Tuck Ming
  • Patent number: 9036897
    Abstract: A computer readable storage medium is provided, storing a computer-executable program for causing a computer to determine at least one of mask pattern and exposure condition of an exposure apparatus having an illumination optical system for illuminating a mask with light from a light source and a projection optical system for projecting the mask pattern onto a substrate. The program causes the computer to perform calculation of an image of a pattern on an object plane of the projection optical system using information about lateral shift of an image caused by the exposure apparatus, and determination of at least one of the exposure condition and the mask pattern based on a calculation result.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: May 19, 2015
    Inventors: Hiroyuki Ishii, Yuichi Gyoda, Koji Mikami, Kouichirou Tsujita
  • Publication number: 20150125971
    Abstract: A polishing apparatus capable of monitoring an accurate progress of polishing is disclosed. The polishing apparatus includes: a polishing table for supporting a polishing pad; a table motor configured to rotate the polishing table; a top ring configured to press a substrate against the polishing pad to polish the substrate; a dresser configured to dress the polishing pad while oscillating on the polishing pad during polishing of the substrate; a filtering device configured to remove a vibration component, having a frequency corresponding to an oscillation period of the dresser, from an output current signal of the table motor; and a polishing monitoring device configured to monitor a progress of polishing of the substrate based on the output current signal from which the vibration component has been removed.
    Type: Application
    Filed: October 29, 2014
    Publication date: May 7, 2015
    Inventors: Taro TAKAHASHI, Yuta SUZUKI
  • Patent number: 9023665
    Abstract: An apparatus and method of manufacturing a light emitting diode (LED) device, and more particularly, an apparatus and method of manufacturing an LED device by dispensing a fluorescent solution prepared by mixing a fluorescent material with a liquid synthetic resin, onto an LED chip. An apparatus and method of manufacturing an LED device, whereby an appropriate amount of fluorescent solution simultaneously in consideration of several factors, such as characteristics of an LED chip and viscosity of the fluorescent solution may be dispensed onto the LED chip, is provided. An apparatus and method of manufacturing an LED device, whereby an appropriate amount of fluorescent solution may be calculated actively in consideration of viscosity of the fluorescent solution, a change in characteristics of an LED chip, or the like, and the appropriate amount of fluorescent solution may be dispensed onto the LED chip, is provided.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: May 5, 2015
    Assignee: Protec Co., Ltd.
    Inventor: Seung Min Hong
  • Patent number: 9023668
    Abstract: A method for producing a substrate having an irregular concave and convex surface for scattering light includes: manufacturing a substrate having the irregular concave and convex surface; irradiating the concave and convex surface of the manufactured substrate with inspection light from a direction oblique to a normal direction and detecting returning light of the inspection light returned from the concave and convex surface by a light-receiving element provided in the normal direction of the concave and convex surface; and judging unevenness of luminance of the concave and convex surface by an image processing device based on light intensity of the returning light received. An organic EL element which includes a diffraction-grating substrate having an irregular concave and convex surface is produced with a high throughput.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: May 5, 2015
    Assignee: JX Nippon Oil & Energy Corporation
    Inventors: Yusuke Sato, Suzushi Nishimura
  • Publication number: 20150118767
    Abstract: A method of manufacturing an EL display device having a light emitting part, in which a plurality of pixels are arrayed, and a thin-film transistor array device to control light emission of the light emitting part, includes a luminance measurement step of obtaining luminance data of pixel, with the light emitting part being lit. The luminance measurement step includes a first luminance measurement step and a second luminance measurement step. In the first luminance measurement step, a first imaging apparatus obtains luminance data by measuring light emission of the each pixel. The first apparatus has a resolution corresponding to that of the pixels of the light emitting part. In the second luminance measurement step after the first step, a second imaging apparatus measures light emission of a plurality of the pixels to correct the luminance data of the each pixel obtained in the first luminance measurement step. The second imaging apparatus is lower in resolution than the first imaging apparatus.
    Type: Application
    Filed: December 30, 2014
    Publication date: April 30, 2015
    Inventors: Kazushi SUGIYAMA, Miki FUKUSHIMA, Yuki IMAI, Yasunori NEGORO
  • Patent number: 9018023
    Abstract: An efficient method of detecting defects in metal patterns on the surface of wafers. Embodiments include forming a metal pattern on each of a plurality of wafers, polishing each wafer, and analyzing the surface of the metal pattern on each polished wafer for the presence of defects in the metal pattern by analyzing an optical across-wafer endpoint signal, generated at the endpoint of polishing. Embodiments include determining the location of defects in the metal pattern by determining the position of non-uniformities in the optical-across-wafer endpoint signal.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: April 28, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Mike Schlicker
  • Patent number: 9018081
    Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
    Type: Grant
    Filed: November 23, 2013
    Date of Patent: April 28, 2015
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Mark Albert Crowder, Changqing Zhan, Paul J. Schuele
  • Publication number: 20150111319
    Abstract: Disclosed are a method and system for eliminating yellow ring phenomenon occurring on the white light emitting diode (LED) based on a blue light chip exciting yellow phosphor powders and having a packaging surface enclosing thereon. Lightspot images are repeatedly acquired outside the white LED, and then each analyzed to see if the yellow ring still exists on a lightspot. If yes, a further atomization process is performed on the packaging surface of white LED, until the acquired and analyzed image shows no yellow ring exists. A lightspot-by-lightspot basis is used in the yellow ring elimination task. In the image analysis, a look up table may be provided in advanced or established at the same time simultaneously with the yellow ring elimination task. The atomization performed on the lightspot may also consider a width issue.
    Type: Application
    Filed: October 22, 2013
    Publication date: April 23, 2015
    Inventors: Ching-Ching Yang, Hsin-Yi Tsai, Yi-Ju Chen, Kuo-Cheng Huang
  • Publication number: 20150104889
    Abstract: A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.
    Type: Application
    Filed: December 22, 2014
    Publication date: April 16, 2015
    Inventors: Takahiko KATO, Hiroshi NAKANO, Haruo AKAHOSHI, Yuuji TAKADA, Yoshimi SUDO, Tetsuo FUJIWARA, Itaru KANNO, Tomoryo SHONO, Yukinori HIROSE
  • Patent number: 9006003
    Abstract: A method of detecting bitmap failure associated with physical coordinates is provided. In the method, data of wafer mapping inspection are obtained first, and the data include images of defects in each of layers within a wafer and a plurality of physical coordinates of the defects. Thereafter, a bitmap failure detection is performed to obtain digital coordinates of failure bits within the wafer. The digital coordinates are converted into a plurality of physical locations, and the physical locations are overlapped with the physical coordinates so as to rapidly obtain correlations between the failure bits and the defects.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: April 14, 2015
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Tuung Luoh, Chi-Min Chen, Ling-Wuu Yang, Ta-Hone Yang, Kuang-Chao Chen
  • Patent number: 9005999
    Abstract: Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
    Type: Grant
    Filed: June 30, 2012
    Date of Patent: April 14, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Kun Xu, Jimin Zhang, David H. Mai, Stephen Jew, Shih-Haur Walters Shen, Zhihong Wang, Thomas H. Osterheld, Wen-Chiang Tu, Gary Ka Ho Lam, Tomohiko Kitajima
  • Patent number: 8993353
    Abstract: In resin coating, carrying a light-passing member test-coated with a resin on a light-passing member carrying unit; making a light source placed above the light-passing member carrying unit emit excitation light exciting the fluorescent substance; measuring light emission characteristics of the light by irradiating the excitation light emitted from the light source unit from above to the resin coated onto the light-passing member and receiving the light that the resin emits from below the light-passing member by a light emission characteristic measurement unit; obtaining a deviation between a measurement result of the light emission characteristic measurement unit and a prescribed light emission characteristic; and deriving the appropriate resin coating quantity of the resin to be coated onto the LED element as what is used for practical production based on the deviation.
    Type: Grant
    Filed: May 30, 2012
    Date of Patent: March 31, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventor: Masaru Nonomura
  • Patent number: 8992721
    Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: March 31, 2015
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Akira Kagoshima, Daisuke Shiraishi, Satomi Inoue, Shigeru Nakamoto, Shoji Ikuhara, Toshihiro Morisawa
  • Patent number: 8987010
    Abstract: Systems and methods are provided for developing usable chip images in order to detect and screen defects or anomalies in a manufacturing environment. More specifically, a method is provided for manufacturing at least one wafer or chip. The method includes obtaining image data of the at least one wafer or chip. The method further includes correcting the image data to remove normal variation within the image data. The method further includes comparing the corrected image data to image data for at least one other wafer or chip to determine whether the corrected image data for the at least one wafer or chip shows a defect or anomaly beyond that of the normal variation. The method further includes placing the at least one wafer or chip into a category of fabrication based on the comparison.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Stephen P. Ayotte, Nicholas G. Clore, Andrew H. Norfleet, Jared P. Yanofsky
  • Patent number: 8987009
    Abstract: A method for tracking an interposer die of a stacked silicon interconnect technology (SSIT) product includes forming a plurality of dummy components on the interposer die, and modifying one or more of the plurality of dummy components on the interposer die to form a unique identifier for the interposer die. An apparatus for a stacked silicon interconnect technology (SSIT) product includes an interposer die, and a plurality of dummy components at the interposer die. One or more of the plurality of dummy components is modifiable to form a unique identifier for the interposer die.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: March 24, 2015
    Assignee: Xilinx, Inc.
    Inventors: Cinti X. Chen, Myongseob Kim, Xiao-Yu Li, Mohsen H. Mardi
  • Patent number: 8978494
    Abstract: A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP densityRADIUSMAX, a minimum value of the COP density is set as COP densityRADIUSMIN, a value computed by “(COP densityRADIUSMAX?COP densityRADIUSMIN/COP densityRADIUSMAX” is compared to a predetermined set value, and a non-crystal-induced COP and a crystal-induced COP are distinguished from each other based on a clear criterion, thereby determining the COP generation factor. Therefore, a rejected wafer in which a determination of the crystal-induced COP is made despite being the non-crystal-induced COP can be relieved, so that a wafer production yield can be enhanced.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: March 17, 2015
    Assignee: Sumco Corporation
    Inventor: Shuichi Inami