Abstract: According to one exemplary embodiment, a programmable poly fuse includes a P type resistive poly segment forming a P-N junction with an adjacent N type resistive poly segment. The programmable poly fuse further includes a P side silicided poly line contiguous with the P type resistive poly segment and coupled to a P side terminal of the poly fuse. The programmable poly fuse further includes an N side silicided poly line contiguous with the N type resistive poly segment and coupled to an N side terminal of the poly fuse. During a normal operating mode, a voltage less than or equal to approximately 2.5 volts is applied to the N side terminal of the programmable poly fuse. A voltage higher than approximately 3.5 volts is required at the N side terminal of the poly fuse to break down the P-N junction.

Abstract: The present disclosure provides methods and apparatus for sensor element isolation in a backside illuminated image sensor. In one embodiment, a method of fabricating a semiconductor device includes providing a sensor layer having a frontside surface and a backside surface, forming a plurality of frontside trenches in the frontside surface of the sensor layer, and implanting oxygen into the sensor layer through the plurality of frontside trenches. The method further includes annealing the implanted oxygen to form a plurality of first silicon oxide blocks in the sensor layer, wherein each first silicon oxide block is disposed substantially adjacent a respective frontside trench to form an isolation feature. A semiconductor device fabricated by such a method is also disclosed.

Abstract: An enhanced shallow trench isolation method for fabricating radiation tolerant integrated circuit devices is disclosed. A layer of pad oxide is first deposited on a semiconductor substrate. A layer of pad nitride is then deposited on the pad oxide layer. A trench is defined within the semiconductor substrate by selectively etching the pad nitride layer, the pad oxide layer, and the semiconductor substrate. Boron ions are then implanted into both the bottom and along the sidewalls of the trench. Subsequently, a trench plug is formed within the trench by depositing an insulating material into the trench and by removing an excess portion of the insulating material. A p-well is implanted to a depth just below the depth of the bottom of the trench. This helps to keep the threshold voltage of the IC device below the trench at a high level, and thereby keep post-radiation leakage low. Then, an electrically neutral species is implanted into the wafer.

Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Abstract: A method of forming an integrated circuit structure includes providing a semiconductor substrate; and forming a first and a second MOS device. The first MOS device includes a first active region in the semiconductor substrate; and a first gate over the first active region. The second MOS device includes a second active region in the semiconductor substrate; and a second gate over the second active region. The method further include forming a dielectric region between the first and the second active regions, wherein the dielectric region has an inherent stress; and implanting the dielectric region to form a stress-released region in the dielectric region, wherein source and drain regions of the first and the second MOS devices are not implanted during the step of implanting.

Abstract: Some embodiments include methods of forming isolation structures. A semiconductor base may be provided to have a crystalline semiconductor material projection between a pair of openings. SOD material (such as, for example, polysilazane) may be flowed within said openings to fill the openings. After the openings are filled with the SOD material, one or more dopant species may be implanted into the projection to amorphize the crystalline semiconductor material within an upper portion of said projection. The SOD material may then be annealed at a temperature of at least about 400° C. to form isolation structures. Some embodiments include semiconductor constructions that include a semiconductor material base having a projection between a pair of openings. The projection may have an upper region over a lower region, with the upper region being at least 75% amorphous, and with the lower region being entirely crystalline.

Abstract: A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.

Abstract: A semiconductor device includes CMP dummy tiles (36) that are converted to active tiles by forming well regions (42) at a top surface of the dummy tiles, forming silicide (52) on top of the well regions, and forming a metal interconnect structure (72, 82) in contact with the silicided well tie regions for electrically connecting the dummy tiles to a predetermined supply voltage to provide latch-up protection.

Abstract: A method for preparing a shallow trench isolation structure with the stress of its isolation oxide being tuned by ion implantation comprises: step a: forming a protective layer on a semiconductor substrate; step b: forming trenches for isolating PMOS active regions and NMOS active regions on the semiconductor substrate and the protective layer; step c: forming a filling material layer in the trenches, so that the trenches are fully filled with the filling material layer to form shallow trench isolation structures. The advantageous is that, as for a device where a HARP process is applied to its shallow trench isolation, the stress in the STI can be tuned so as to be changed from tensile stress into compressive stress by performing ion implantation to the STI around the PMOS, therefore the stress state of the PMOS channel region may be changed and the performance thereof is improved.

Abstract: A semiconductor cell includes first trenches defining fin type active regions within the semiconductor substrate and adjacent to each other, second trenches disposed at one side and the other side of the first trenches, adjacent to the first trench and including fin type active regions, a first oxide layer formed on each of surfaces of the first trenches, and a second oxide layer formed on each of surfaces of the second trenches and having a thicker thickness than the first oxide layer. Although the critical dimension of the fin is increased, the gate drivability can be improved.

Abstract: A method and circuits for implementing a temporary disable function at indeterminate times of circuitry to be protected in a semiconductor chip, such as in an integrated circuit or a system on a chip (SOC) by modulating threshold voltage shifts of a timing sensitive circuit, and a design structure on which the subject circuit resides are provided. The timing sensitive circuit is designed to be sensitive to threshold-voltage shifts and is placed over an independently voltage controlled silicon region. Upon startup, the independently voltage controlled silicon region is grounded, and then is left floating. Each time a hack attempt or predefined functional oddity is detected, charge is applied onto the independently voltage controlled silicon region. After a defined charge has accumulated, the device threshold voltages in the timing sensitive circuit above the independently voltage controlled silicon region are modulated causing the timing-sensitive circuit to fail.

Abstract: A method and an eFuse circuit for implementing with enhanced eFuse blow operation without requiring a separate high current and high voltage supply to blow the eFuse, and a design structure on which the subject circuit resides are provided. The eFuse circuit includes an eFuse connected to a field effect transistor (FET) operatively controlled during a sense mode and a blow mode for sensing and blowing the eFuse. The eFuse circuit is placed over an independently voltage controlled silicon region. During a sense mode, the independently voltage controlled silicon region is grounded providing an increased threshold voltage of the FET. During a blow mode, the independently voltage controlled silicon region is charged to a voltage supply potential. The threshold voltage of the FET is reduced by the charged independently voltage controlled silicon region for providing enhanced FET blow function.

Abstract: A method of forming a non-planar transistor is provided. A substrate is provided. The substrate has a plurality of isolation regions to be formed and a plurality of fin regions to be formed. A first etching process is performed to form a plurality of first trenches having a first depth in the substrate within the isolation regions. At least a doping region is formed in the substrate within the fin regions. A second etching process is performed to deepen the first depth to a second depth and a plurality of fin structures are formed in the substrate within the fin regions. Lastly, a gate is formed on the fin structures.

Abstract: A description is given of a method for producing isolation trenches (32, 34) with different sidewall dopings on a silicon-based substrate wafer for use in the trench-isolated smart power technology. In this case, a first trench (32) having a first width and a second trench (34) having a second width which is greater than the first width are formed using a hard mask (30). The sidewalls of the first and second trenches are doped in accordance with a first doping type in order to produce sidewalls having a first doping. A material layer (50, 51, 60, 61) is deposited with a thickness determined so as to fill the first trench (32) completely up to and beyond the hard mask and to maintain the gap (34a) in the second trench (34). By means of isotropic etching the material layer is removed from the second trench, but residual material of the material layer is maintained in the first trench.

Abstract: A semiconductor device includes an insulating layer and an undoped polysilicon layer that are stacked over a semiconductor substrate. The semiconductor substrate is exposed by removing the portions of the undoped polysilicon layer and the insulating layer. The trenches are formed by etching the exposed semiconductor substrate. Isolation layers are formed in the trenches, and a doped polysilicon layer is formed by implanting impurities into the undoped polysilicon layer.

Abstract: Disclosed is a semiconductor structure for producing a handle wafer contact in trench insulated SOI discs which may be used as a deep contact (7, 6, 30?) to the handle wafer (1) of a thick SOI disc as well as for a trench insulation (40). Therein, the same method steps are used for both structures which are used as deep contact to the handle wafer of the thick SOI disc as well as trench insulation.

Abstract: There are provided a semiconductor device and a method of forming the same. The semiconductor device may include a semiconductor substrate including a digital circuit region and an analog circuit region, a device isolation layer on the boundary between the digital circuit region and the analog circuit region, a conductive region adjacent to the side surface and the bottom surface of the isolation layer, and a ground pad which is electrically connected to the conductive region and to which a ground voltage is applied.

Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.

Abstract: The embodiments described provide methods and structures for doping oxide in the STIs with carbon to make etch rate in the narrow and wide structures equal and also to make corners of wide STIs strong. Such carbon doping can be performed by ion beam (ion implant) or by plasma doping. The hard mask layer can be used to protect the silicon underneath from doping. By using the doping mechanism, the even surface topography of silicon and STI enables patterning of gate structures and ILD0 gapfill for advanced processing technology.

Abstract: A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate. Then, on the wafer, a trench to become a scribing line is formed with a crystal face exposed so as to form a side wall of the trench. On that side wall, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to dice a collector electrode, formed on the p collector region, together with the p collector region.

Abstract: A superjunction semiconductor device is provided having at least one column of a first conductivity type and at least one column of a second conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface. The at least one column of the second conductivity type has a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface. A termination structure is proximate the second sidewall surface of the at least one column of the second conductivity type. The termination structure includes a layer of dielectric of an effective thickness and consumes about 0% of the surface area of the first main surface. Methods for manufacturing superjunction semiconductor devices and for preventing surface breakdown are also provided.

Abstract: Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.

Abstract: An integrated circuit and a production method is disclosed. One embodiment forms reverse-current complexes in a semiconductor well, so that the charge carriers, forming a damaging reverse current, cannot flow into the substrate.

Abstract: A method of forming a semiconductor device includes defining a first type region and a second type region in a substrate, t separated by one or more inter-well STI structures; etching and filling, in at least one of the first type region and the second type region, one or more intra-well STI structures for isolating semiconductor devices formed within a same polarity well, wherein the one or more inter-well STI structures are formed at a substantially same depth with respect to the one or more intra-well STI structures; implanting, a main well region, wherein a bottom of the main well region is disposed above a bottom of the one or more inter-well and intra-well STI features; and implanting, one or more deep well regions that couple main well regions, wherein the one or more deep well regions are spaced away from the one or more inter-well STI structures.

Abstract: The invention relates to a method of manufacturing integrated circuits and in particular to the step of forming shallow trench isolation (STI) zones. The method according to the present invention leads to electronic devices and to integrated circuits having reduced narrow width effect and edge leakage. This is achieved by performing an extra implantation step near the edge of the STI zone, after formation of the STI zones.

Abstract: A method includes providing a substrate with at least one semiconducting layer. The method also includes forming a plurality of isolation barriers within the at least one semiconducting layer, thereby forming a plurality of device islands. The method further includes inserting a plurality of electronic devices into a portion of the at least one semiconducting layer such that each electronic device is substantially isolated from each other electronic device by the device islands.

Abstract: A method of manufacturing a Three Dimensional (3D) semiconductor memory device can be provided by forming at least one trench in a plate stack structure to divide the plate stack structure into a plurality of sub-plate stack structures between forming a plurality of vertical active patterns in the plate stack structure and forming pads of a stepped structure from the plate stack structure.

Abstract: A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a conformal deposition method to fill a dielectric material into the opening; performing a first treatment on the dielectric material, wherein the first treatment provides an energy high enough for breaking bonds in the dielectric material; and performing a steam anneal on the dielectric material.

Abstract: A method of forming a semiconductor structure is provided. The method includes providing a semiconductor substrate with a substrate region. The method also includes forming a pad oxide layer overlying the substrate region. The method additionally includes forming a stop layer overlying the pad oxide layer. Furthermore, the method includes patterning the stop layer and the pad oxide layer to expose a portion of the substrate region. In addition, the method includes forming a trench within an exposed portion of the substrate region, the trench having sidewalls and a bottom and a height. Also, the method includes depositing alternating layers of oxide and silicon nitride to at least fill the trench, the oxide being deposited by an HDP-CVD process. The method additionally includes performing a planarization process to remove a portion of the silicon nitride and oxide layers. In addition, the method includes removing the pad oxide and stop layers.

Abstract: The present invention relates to methods for forming microelectronic structures in a semiconductor substrate. The method includes selectively removing dielectric material to expose a portion of an oxide overlying a semiconductor substrate. Insulating material may be formed substantially conformably over the oxide and remaining portions of the dielectric material. Spacers may be formed from the insulating material. An isolation trench etch follows the spacer etch. An optional thermal oxidation of the surfaces in the isolation trench may be performed, which may optionally be followed by doping of the bottom of the isolation trench to further isolate neighboring active regions on either side of the isolation trench. A conformal material may be formed substantially conformably over the spacer, over the remaining portions of the dielectric material, and substantially filling the isolation trench. Planarization of the conformal material may follow.

Abstract: Techniques for forming devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an oxide. Cavities may be formed in the oxide and filled with a conductive material, such a doped polysilicon. Vertical junctions are formed between the polysilicon and the exposed substrate at the trench edges such that during a thermal cycle, the doped polysilicon will out-diffuse doping elements into the adjacent single crystal silicon advantageously forming a diode extension having desirable properties.

Abstract: A superjunction semiconductor device is provided having at least one column of a first conductivity type and at least one column of a second conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface. The at least one column of the second conductivity type has a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface. A termination structure is proximate the second sidewall surface of the at least one column of the second conductivity type. The termination structure includes a layer of dielectric of an effective thickness and consumes about 0% of the surface area of the first main surface. Methods for manufacturing superjunction semiconductor devices and for preventing surface breakdown are also provided.

Abstract: A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer.

Abstract: A method of forming an integrated circuit structure includes providing a semiconductor substrate; and forming a first and a second MOS device. The first MOS device includes a first active region in the semiconductor substrate; and a first gate over the first active region. The second MOS device includes a second active region in the semiconductor substrate; and a second gate over the second active region. The method further include forming a dielectric region between the first and the second active regions, wherein the dielectric region has an inherent stress; and implanting the dielectric region to form a stress-released region in the dielectric region, wherein source and drain regions of the first and the second MOS devices are not implanted during the step of implanting.

Abstract: The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm?3 to 5×1020 cm?3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

Abstract: A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

Abstract: A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.

Abstract: A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.

Abstract: A method of manufacturing a semiconductor device includes: forming first conductive layer on semiconductor substrate; forming a magnetic film on the first conductive layer; forming second conductive layer on the magnetic film; forming a first mask layer on the second conductive layer; patterning the second conductive layer; patterning the magnetic film; forming a first insulating film on the first conductive layer to cover side surfaces of the patterned second conductive layer and the patterned magnetic film; forming a second mask layer on the first insulating film to cover the patterned second conductive layer, the patterned magnetic film, and the first insulating film; patterning the first insulating film; patterning the first conductive layer; forming a second insulating film on the semiconductor substrate to cover the patterned second conductive layer, the patterned magnetic film, and the patterned first conductive layer; and forming a third insulating film on the second insulating film.

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed on an active region of a substrate. An exposed portion of the substrate is removed to form a trench in the substrate. A preliminary first insulation layer is formed on a bottom and sidewalls of the trench and the mask pattern. A plasma treatment is performed on the preliminary first insulation layer using fluorine-containing plasma to form a first insulation layer including fluorine. A second insulation layer is formed on the first insulation layer to fill the trench. A thickness of a gate insulation layer adjacent to an upper edge of the trench may be selectively increased, and generation of leakage current may be reduced.

Abstract: A method for fabricating an integrated circuit is provided. The method includes providing a substrate having an active region and an opening in the substrate adjacent to the active region. The opening is filled with a dielectric material so as to provide an isolation region in the substrate. A transistor is also formed in the active region and a pre-metal dielectric layer formed over the substrate and transistor. At least one of the dielectric layer in isolation region or the pre-metal dielectric layer includes a stressed O3 TEOS oxide having a stress retaining dopant, wherein the concentration of the stress retaining dopant is sufficient to retard stress degradation of the O3 TEOS oxide.

Abstract: A channel stop region is formed immediately under an STI, and thereafter, an ion implantation is performed with conditions in which an impurity is doped into an upper layer portion of an active region, and at the same time, the impurity is also doped into immediately under another STI, and a channel dose region is formed at the upper layer portion of the active region, and another channel stop region is formed immediately under the STI.

Abstract: Provided are a method of fabricating a semiconductor device and an electronic system. The method of fabricating a semiconductor device includes forming a well impurity region, a lower impurity region and an upper impurity region in a semiconductor substrate. The lower impurity region has a different conductivity type than a conductivity type of the well impurity region, the upper impurity region has a different conductivity type than the conductivity type of the lower impurity region, and the upper impurity region has a same conductivity type as the conductivity type of the well impurity region and has a higher impurity concentration than an impurity concentration of the well impurity region.

Abstract: A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

Abstract: This invention discloses semiconductor device that includes a top region and a bottom region with an intermediate region disposed between said top region and said bottom region with a controllable current path traversing through the intermediate region. The semiconductor device further includes a trench with padded with insulation layer on sidewalls extended from the top region through the intermediate region toward the bottom region wherein the trench includes randomly and substantially uniformly distributed nano-nodules as charge-islands in contact with a drain region below the trench for electrically coupling with the intermediate region for continuously and uniformly distributing a voltage drop through the current path.

Abstract: A semiconductor device having a core device with a high-k gate dielectric and an I/O device with a silicon dioxide or other non-high-k gate dielectric, and a method of fabricating such a device. A core well and an I/O well are created in a semiconductor substrate and separated by an isolation structure. An I/O device is formed over the I/O well and has a silicon dioxide or a low-k gate dielectric. A resistor may be formed on an isolation structure adjacent to the core well. A core-well device such as a transistor is formed over the core well, and has a high-k gate dielectric. In some embodiments, a p-type I/O well and an n-type I/O well are created. In a preferred embodiment, the I/O device or devices are formed prior to forming the core device and protected with a sacrificial layer until the core device is fabricated.

Abstract: An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed extending from the top surface into the substrate. The trench has sidewalls and a bottom surface. A liner oxide layer is formed on the sidewalls and the bottom surface. The liner oxide layer is treated in a plasma environment comprises at least one of NF3, F2, and BF2. The trench is filled with a dielectric layer.

Abstract: A method for fabricating a semiconductor device is disclosed. The method includes forming a first oxide film, a nitride film, and a second oxide film on a semiconductor substrate in succession, etching the second oxide film and the nitride film to form a second oxide film pattern and a nitride film pattern, exposing a portion of the first oxide film, performing at least one nitrogen implantation into the semiconductor substrate to form a nitrogen injection region under the exposed portion of the first oxide film, forming a third oxide film over the second oxide film pattern, the nitride film pattern, and the semiconductor substrate, forming a trench that is deeper than the nitrogen ion injection region by etching the semiconductor substrate using the second oxide film pattern as a mask, and filling the trench with an oxide film to form a device isolating film.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed. A method for manufacturing a semiconductor device includes forming a trench for defining an active region over a semiconductor substrate, forming a doped region by implanting impurities into the trench, forming an oxide film in the trench by performing an oxidation process, forming a nitride film at inner sidewalls of the trench, and forming a device isolation film in the trench.