Abstract: Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. Halogen-free precursors and catalysts include self-catalyzing aminosilane compounds and halogen-free organic acids. Flowable films may be used to fill pores in existing dielectric films on substrates having exposed metallization layers. The methods involve hydrolysis and condensation reactions.

Abstract: A manufacturing method of a wire including: forming a lower layer on a substrate; forming a middle layer on the lower layer; forming an upper layer on the middle layer; forming, exposing, and developing a photoresist layer on the upper layer to form a photoresist pattern; and etching the upper layer, the middle layer, and the lower layer by using the photoresist pattern as a mask to form a wire such that the upper layer covers an end of the middle layer.

Abstract: A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.

Abstract: Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.

Abstract: Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.

Abstract: A low temperature wafer bonding method and a bonded structure are provided. The method includes: providing a first substrate having a plurality of metal pads and a first dielectric layer close to the metal pads, where the metal pads and the first dielectric layer are on a top surface of the first substrate; providing a second substrate having a plurality of semiconductor pads and a second dielectric layer close to the semiconductor pads, where the semiconductor pads and the second dielectric layer are on a top surface of the second substrate; disposing at least one of the metal pads in direct contact with at least one of the semiconductor pads, and disposing the first dielectric layer in direct contact with the second dielectric layer; and bonding the metal pads with the semiconductor pads, and bonding the first dielectric layer with the second dielectric layer.

Abstract: A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side of the first wafer and a free space is etched in the isolation set. The second wafer is bonded to the isolation set. A floating structure, such as an inertia sensing device, is formed in the second wafer over the free space. In an embodiment, a surface mount pad is formed on the second side of the first wafer. Then, the floating structure is electrically coupled to the surface mount pad using a through silicon via (TSV) conductor.

Abstract: Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.

Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.

Abstract: Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Abstract: Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 ?m into the substrate. The isolating structure prevents photons and electrons originating in peripheral circuitry from reaching the active area. Where the substrate has a heavily-doped lower layer and an upper layer on it, the trench can extend through the upper layer to the lower layer. A thermal oxide can be grown on the trench walls. A liner can also be deposited on the sidewalls of each trench. A fill material having a high-extinction coefficient is then deposited over the liner. The liner can also be light absorbent so that both the liner and fill material block photons.

Abstract: In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

Abstract: First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.

Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.

Abstract: An efficient method is disclosed for increasing the breakdown voltage of an integrated circuit device that is isolated by a local oxidation of silicon (LOCOS) process. The method comprises forming a portion of a field oxide in an integrated circuit so that the field oxide has a gradual profile. The gradual profile of the field oxide reduces impact ionization in the field oxide by creating a reduced value of electric field for a given value of applied voltage. The reduction in impact ionization increases the breakdown voltage of the integrated circuit. The gradual profile is formed by using an increased thickness of pad oxide and a reduced thickness of silicon nitride during a field oxide oxidation process.

Abstract: An efficient method is disclosed for creating different field oxide profiles in a local oxidation of silicon process (LOCOS process). The method comprises (1) forming a first portion of the field oxide with a first field oxide profile (e.g., an abrupt bird's beak profile) during a field oxide oxidation process, and (2) forming a second portion of the field oxide with a second field oxide profile (e.g., a graded bird's beak profile) during the field oxide oxidation process. A graded bird's beak profile enables higher breakdown voltages. An abrupt bird's beak profile enables higher packing densities. The method gives an integrated circuit designer the flexibility to create an appropriate field oxide profile at a desired location.

Abstract: Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Abstract: A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a predetermined thickness of the semiconductor substrate using the nitride film pattern as a mask to form a trench having a vertical sidewall in a portion of the substrate predetermined to be a device isolation region, performing a plasma treatment process on the sidewall of the trench to form a plasma oxide film, forming an oxide film over the resulting structure to fill the trench, and performing a planarization process over the resulting structure.

Abstract: Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 ?m into the substrate. The isolating structure prevents photons and electrons originating in peripheral circuitry from reaching the active area. Where the substrate has a heavily-doped lower layer and an upper layer on it, the trench can extend through the upper layer to the lower layer. A thermal oxide can be grown on the trench walls. A liner can also be deposited on the sidewalls of each trench. A fill material having a high-extinction coefficient is then deposited over the liner. The liner can also be light absorbent so that both the liner and fill material block photons.

Abstract: A method of fabricating a semiconductor device includes forming a pad oxide film and a nitride film on a semiconductor substrate; exposing the semiconductor substrate by selectively etching the pad oxide film and the nitride film; forming a trench in the exposed semiconductor substrate; forming a gap-fill dielectric film in the trench; exposing an active area of the semiconductor substrate by removing the pad oxide film and the nitride film; forming an epitaxial layer including a dopant in the exposed active area; forming a gate electrode on the epitaxial layer; and forming source and drain regions in the active area beside the gate electrode. The semiconductor device can prevent surface damage of a semiconductor substrate, may occur when performing ion implantation for threshold voltage control, and does not require annealing after ion implantation.

Abstract: A method of fabricating a semiconductor device including gate dielectrics having different thicknesses may be provided. A method of fabricating a semiconductor device may include providing a substrate having a higher voltage device region and a lower voltage device region, forming an anti-oxidation layer on the substrate, and selectively removing portions of the anti-oxidation layer on the substrate. The method may also include performing a first thermal oxidization on the substrate to form a field oxide layer on the selectively removed portions of the anti-oxidation layer, removing the anti-oxidation layer disposed on the higher voltage device region, performing a second thermal oxidization on the substrate to form a central higher voltage gate oxide layer on the higher voltage device region, removing the anti-oxidation layer disposed on the lower voltage device region, and performing a third thermal oxidization on the substrate to form a lower voltage gate oxide layer on the lower voltage device region.

Abstract: A highly reliable semiconductor device that controls both defects and impurity diffusion and a method for manufacturing such a semiconductor device. An N+ embedment layer and an N-type epitaxial layer are formed on a main surface region of a P-type silicon substrate. An STI trench is formed in the N-type epitaxial layer. A thermal oxidation film is formed on the inner surface of the STI trench. The STI trench is filled with an HDP-NSG film. A deep trench is formed in the STI trench with a depth reaching the silicon substrate. A further thermal oxidation film is formed on the inner surface of the deep trench. The thermal oxidation film of the deep trench is thinner than that of the STI trench. A silicon oxidation film is also formed in the deep trench and filled with a polysilicon film.

Abstract: An efficient method for the thermal oxidation of preferably silicon semiconductor wafers using LOCOS (local oxidation of silicon) processes is described. The mechanical stresses of the wafers are to be reduced. To this end, an oxidation method is proposed that comprises providing a substrate (1) having a front side (12) to be patterned and a rear side (13). The substrate is oxidized in two steps. In a first step the rear side (13) is covered by a layer (4) that inhibits or hampers the oxidation. During a second step of the oxidation the oxidation-hampering layer (4) is no longer present. During both steps an oxide thickness is obtained on the front side (12) that is greater than an oxide thickness obtained on the rear side (13).

Abstract: An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane stresses, wherein removal of the applied pressure after deposition of the thin film modifies the in-film stress for the thin film. With the above-described arrangement, it is possible to minimize the deterioration of electric characteristics of a semiconductor device and the occurrence of defects, such as film delamination, substrate cracks, and the like.

Abstract: Provided is a method for manufacturing a semiconductor device, including a dual-stage deposition step including: a first stage for introducing tantalum penta-ethoxide containing tantalum as a material gas into a reaction chamber in which a semiconductor substrate on a surface of which a lower electrode is made of ruthenium is placed to thus form a tantalum oxide film by a vapor-phase growth method such as a chemical vapor deposition method and the following second stage for removing from the reaction chamber the material gas introduced into the reaction chamber at the first stage and a byproduct produced at the first stage by introducing a nitrogen gas, and wherein the tantalum oxide film is formed on the semiconductor substrate, by repeating the dual-stage deposition step two or more times.

Abstract: A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).

Abstract: Enhanced silicon-on-insulator transistors and methods are provided for implementing enhanced silicon-on-insulator transistors. The enhanced silicon-on-insulator (SOI) transistors include a thin buried oxide (BOX) layer under a device channel and a thick self-aligned buried oxide (BOX) region under SOI source/drain diffusions. A selective epitaxial growth is utilized in the source/drain regions to implement appropriate strain to enhance both PFET and NFET devices simultaneously.

Abstract: In a semiconductor device including a semiconductor wafer having a first main surface where a circuit element is formed, electrode pads are formed at an upper portion of the first main surface of the semiconductor wafer electrically connected with the circuit element. Index marks are formed on a second main surface of the semiconductor wafer that is opposite the first main surface. The index marks consist of line segments and indicate a direction along which the semiconductor device is to be mounted.

Abstract: In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating different types of liner oxides and thus different types of corner rounding and thus mechanical stress. Therefore, for a specified type of circuit elements, the characteristics of the corresponding isolation trenches may be tailored to achieve an optimum device performance.

Abstract: A field isolation process performed on a silicon wafer is carried out by high pressure oxidation. Using oxygen rather than water vapor as the oxidant substantially eliminates nitride inclusions via the Kooi effect. Preferred high pressure field oxidation processes simplify all CMOS flows by eliminating the need for sacrificial oxide growth and removal steps.

Abstract: A method for forming within a silicon semiconductor substrate employed within a microelectronics fabrication a silicon oxide dielectric layer. There is provided a silicon semiconductor substrate. There is formed upon the silicon semiconductor substrate a blanket silicon oxide pad oxide layer. There is then formed upon the pad oxide layer a patterned silicon nitride masking layer delineating active regions of the silicon semiconductor substrate from isolation regions. There is formed upon the isolation regions by thermal oxidation of the semiconductor silicon substrate in a dry oxidizing environment at an elevated temperature a thick silicon oxide dielectric layer employed as a field oxide (FOX) dielectric isolation layer formed through the silicon nitride patterned masking layer.

Abstract: A method of semiconductor integrated circuit fabrication. Specifically, one embodiment of the present invention discloses a method for reducing shallow trench isolation (STI) corner recess of silicon in order to reduce STI edge thinning on tunnel oxides (510) for flash memories (devices M and N). An STI process is implemented to isolate flash memory devices (devices M and N) in the semiconductor structure (200). In the STI process, a nitride layer (210) is deposited over a silicon substrate (280). An STI region (290) is formed defining STI corners (240) where a top surface (270) of the silicon substrate (280) and the STI region (290) converge. The STI region (290) is filled with an STI field oxide and planarized until reaching the nitride layer (210). A local oxidation of silicon (LOCOS) is then performed to oxidize the top surface (270) of the silicon substrate adjacent to the STI corners (240).

Abstract: In a method of forming an integrated circuit device, sidewall oxides are formed by plasma oxidation on the patterned gate. This controls encroachment beneath a dielectric layer underlying the patterned gate. The patterned gate is oxidized using in-situ O2 plasma oxidation. The presence of the sidewall oxides minimizes encroachment under the gate edge.

Abstract: A temperature control method is provided which is capable of performing quick, accurate, and error-free soaking control over all wafer areas to be thermally treated at a target temperature without requiring any skilled operator and which can be automated by using a computer. In the temperature control method of controlling a heating apparatus having at least two heating zones in such a manner that temperatures detected at predetermined locations equal a target temperature therefor, temperatures are detected at predetermined locations the number of which is larger than the number of the heating zones, and the heating apparatus is controlled in such a manner that the target temperature falls between a maximum value and a minimum value of a plurality of detected temperatures.

Abstract: A process for making a semiconductor structure, includes forming a second dielectric layer on exposed regions of an intermediate structure. The intermediate structure includes: a semiconductor substrate having the regions, a first dielectric layer on at least a first portion of the semiconductor substrate, an etch-stop layer on at least a second portion of the first dielectric layer, and spacers on at least a third portion of said semiconductor substrate. The spacers are adjacent edges of the etch-stop layer and adjacent the exposed regions.

Abstract: A highly reliable semiconductor device capable of preventing generation of a leakage current is provided. The semiconductor device comprises a silicon substrate having a main surface and including a trench formed on the main surface. The trench is defined by surfaces including a bottom surface, a side surface, continuous to the bottom surface, having first inclination with respect to the main surface, and an intermediate surface, formed between the main surface and the bottom surface, having second inclination smaller than the first inclination with respect to the main surface. The semiconductor device further comprises an n-type impurity region.

Abstract: A method for controlling temperature of a semiconductor wafer in a process chamber includes heating the chamber from a starting temperature to a stabilizing temperature at a heating rate of approximately 12 degrees Celsius per second and maintaining the chamber at the stabilizing temperature for a selected stabilization period. The chamber is then heated from the stabilizing temperature to a process temperature at a heating rate of approximately 10 degrees Celsius per second. This process temperature is maintained for a selected processing period. After the period, the chamber is cooled to an exit temperature at a selected low cooling rate.

Abstract: A process of production of a semiconductor memory device having a memory array including memory cells and a peripheral circuit on one substrate comprising the process of forming an interlayer insulating layer covering the memory array and peripheral circuit; forming the memory cells; exposing a surface of diffusion regions in the peripheral circuit after forming the memory cells; and forming a covering conductive layer on the exposed region of the diffusion regions in peripheral circuit. A semiconductor memory device produced by such a process has memory area having a good data retention due to a low junction leakage in the diffusion regions of the memory cells, whereas it has a high processing speed peripheral circuit due to a low resistance of the diffusion regions of the peripheral circuit.

Abstract: A method for forming isolation regions on a semiconductor substrate, includes partially covering the surface of the semiconductor substrate with oxidation inhabiting films, and heat-treating the portions of the semiconductor substrate which are exposed from the oxidation inhabiting films. The heat treatment consists of a wet-type heating step in a gaseous atmosphere containing oxygen and hydrogen, and a dry-type heating step in a atmosphere without hydrogen which is performed after the wet-type heating step.

Abstract: A method for estimating molecular nitrogen implantation dosage. The semiconductor wafers are first implanted with various concentration of molecular nitrogen. After implantation, the implanted wafers and a non-implanted wafer are subjected to thermal process to grow oxide layer. The thickness of oxide layer on the wafers with various implantation dosage is measured. Because implanted nitrogen on the wafers suppresses the growth of oxide layer, a suppression ratio is computed from the difference in thickness of the oxide layer between the implanted and non-implanted semiconductor wafers to stand for the thickness variation. Then, a relation between the suppression ratio and the dosages of molecular nitrogen is built. A molecular nitrogen dosage needed to grow a predetermined thickness of oxide layer on a process wafer is computed by inputting the predetermined thickness into the relation.

Abstract: There is disclosed a method of forming an isolation film in a semiconductor device, the method including the steps of: forming a silicon oxide film and a silicon nitride film in that order on a silicon substrate, using a resist pattern as a mask, etching the silicon nitride film and silicon oxide film, and forming trenches in the substrate. In the substrate, the respective trenches form a region in which isolation films are to be formed, and the region between the trenches forms an active region. In this case, each dimension is set so that a ratio W/t of width W to thickness t of the patterned silicon nitride film is 3.8 or more. Subsequently, by removing the resist pattern, subsequently using the silicon nitride film as the mask, and performing thermal oxidation at a temperature of 1050° C. to 1150° C. in an oxygen atmosphere, an isolation film is formed in the trench.

Abstract: In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below

Abstract: A process used to retard out diffusion of P type dopants from P type LDD regions, resulting in unwanted LDD series resistance increases, has been developed. The process features the formation of a nitrogen containing layer, placed between the P type LDD region and overlying silicon oxide regions, retarding the diffusion of boron from the LDD regions to the overlying silicon oxide regions, during subsequent high temperature anneals. The nitrogen containing layer, such as a thin silicon nitride layer, or a silicon oxynitride layer, formed during or after reoxidation of a P type polysilicon gate structure, is also formed in a region that also retards the out diffusion of P type dopants from the P type polysilicon gate structure.

Abstract: A method for fabricating a semiconductor structure includes growing regions of oxide on a first structure, to form bit-line regions; wherein said semiconductor structure includes a semiconducting substrate, a patterned ONO layer on said substrate, wherein said patterned ONO layer comprises regions of ONO and exposed regions of said semiconducting substrate, a patterned hard mask layer on said regions of ONO, and a patterned photoresist layer on said patterned hard mask layer.

Abstract: The invention utilizes introductions of oxygen and hydroxyl to perform an in situ steam generated process to reoxidize a conventional sidewall oxide layer and density the oxide in a shallow trench isolation. The ISSG process renders the conventional sidewall oxide layer much less stress and encroachment. The electrical property of the active regions and the isolation quality between the active regions can be assured. The ISSG process can densify the oxide in a shallow trench isolation to prevent the oxide from being lost in the following clean process.

Abstract: A first field oxidation is performed by masking an element-isolating region formation-expected region on a substrate by a first oxidation preventing film (silicon nitride film) having therein a first opening to thereby form a first field oxide film, which is then masked by a second oxidation preventing film (silicon nitride film) having a second opening with a smaller width dimension than the first opening in a second field oxidation to thereby locally form a second field oxide film at the middle of the first field oxide film.

Abstract: A method of manufacturing a semiconductor device is provided which, even if device dimensions decrease, prevents degradation in the operating characteristics of semiconductor elements which are isolated from each other by an element isolation region in a trench isolation structure. Implantation of ions (15) in a polycrystalline silicon layer (3) from above through a silicon nitride film (2) produces an ion-implanted polycrystalline silicon layer (16). Since the ions (15) are an ionic species of element which acts to enhance oxidation, the implantation of the ions (15) changes the polycrystalline silicon layer (3) into the ion-implanted polycrystalline silicon layer (16) having a higher oxidation rate. In subsequent formation of a thermal oxide film (21) on the inner wall of a trench (5), exposed part of the ion-implanted polycrystalline silicon layer (16) is also oxidized, forming relatively wide polycrystalline silicon oxide areas (21a).

Abstract: Methods of forming a field oxide region and an adjacent active area region are described. A semiconductive substrate is masked with an oxidation mask while an adjacent area of the substrate remains unmasked. The substrate is exposed to conditions effective to form a field oxide region in the adjacent area. The field oxide region has a bird's beak region which extends toward the active area. A mass of material is formed over at least a portion of the bird's beak region. In a preferred implementation, the mass of material is formed from material which is different than the material from which the oxidation mask and the field oxide region are formed. According to one aspect of the invention, the material comprises, polysilicon. In another preferred implementation, such different material comprises a spacer which is formed over at least a portion of the oxidation mask. Preferably, an undercut region is formed under the mass or spacer and subsequently filled with oxide material.

Abstract: A pad layer and a silicon nitride layer are respectively formed on a substrate. The multi-layer is then patterned to define active areas. Next, the substrate is etched to form a recessed portion. A sidewal barrier is formed on the sidewall of the recessed portion. A thermal oxidation process is performed using the silicon nitride layer and the sidewal barrier as a mask to form FOX for suppressing oxygen penetration into the substrate during the oxidation process. Therefore, the conventional bird's beak effect is reduced by the method of the present invention.

Abstract: A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen and 13% trichloroethane. Next, a wet oxidation in pyrogenic steam is performed to produce a total oxide thickness of approximately 80 Å. The oxide layer formed is ideally suited for use as a high integrity gate oxide below 100 Å. The invention is particularly useful in devices with advanced, recessed field isolation where sharp silicon edges are difficult to oxidize. For an oxide layer of more than 100 Å, a composite oxide stack is used which comprises 40-90 Å of pad oxide formed using the above novel process, and 60-200 Å of deposited oxide.