Abstract: A method of dividing an adhesive film for die bonding which is bonded to the rear surface of a wafer having devices in a plurality of areas sectioned by dividing lines formed in a lattice pattern on the front surface, into pieces corresponding to the devices, comprising the steps of putting the adhesive film side of the wafer on the front surface of a dicing tape mounted on an annular frame; cutting the wafer whose adhesive film side has been put on the dicing tape into devices along the dividing lines and cutting the adhesive film incompletely in such a way that an uncut portion is caused to remain; and expanding the dicing tape after the cutting step to divide the adhesive film into pieces corresponding to the devices.

Abstract: A laser processing method including a first step of forming a first groove and a second step of forming a second groove on the workpiece. In the first step, the laser beam is intermittently applied to the first street except the intersections between the first street and the second street, thereby forming a discontinuous groove as the first groove in such a manner that each intersection is not grooved. In the second step, the laser beam is continuously applied to the second street, thereby forming a continuous groove as the second groove intersecting the first groove in such a manner that each intersection is grooved by the second groove. In the second step, heat generated at a portion immediately before each intersection is passed through the intersection to be dissipated forward, thereby suppressing overheating at this portion.

Abstract: A method of manufacturing a device includes: a laser beam-machined groove forming step of irradiating a wafer with a laser beam from the back side of the wafer along planned dividing lines so as to form laser beam-machined grooves along the planned dividing lines; an etching step of etching a back-side surface of the wafer having been subjected to the laser beam-machined groove forming step, so as to remove denatured layers formed at processed surfaces of the laser beam-machined grooves; an adhesive film attaching step of attaching an adhesive film to the back-side surface of the wafer having been subjected to the etching step, and adhering the adhesive film side of the wafer to a surface of a dicing tape; and an adhesive film rupturing step of expanding the dicing tape so as to rupture the adhesive film along individual devices.

Abstract: In a laser beam processing method, when a laser beam is emitted along a second predetermined dividing line to form a second groove intersecting a first groove previously formed, the power output of the laser beam is allowed to be a first power output in a first interval, that is, until the second predetermined dividing line reaches a position immediately before the first groove. In a second interval from the position close to the first groove to the first groove reached by the second predetermined dividing line, the power output of the laser beam is set to a second power output lower than the first power output. Thus, overheat on the periphery of the second interval can be suppressed.

Abstract: An alignment method of a laser beam processing machine comprising a chuck table, a laser beam application means having a condenser for applying a laser beam to the workpiece held on the chuck table, an image pick-up means for picking up an image of the workpiece held on the chuck table and a control means having a memory for storing the specifications of the workpiece, the method comprising the steps of storing the design coordinates of a processing position set based on the mark indicating the crystal orientation of a wafer and alignment marks; picking up an image of the periphery of the wafer with the image pick-up means and locating the mark indicating the crystal orientation of the wafer at a predetermined position; positioning the design coordinate position of each of the alignment marks set based on the mark indicating the crystal orientation of the wafer right below the condenser and applying a laser beam from the condenser so as to remove the insulating film in the alignment mark areas; and picking up

Abstract: AlxInyGa1-x-yN(0?x?1; 0?x?1; 0?x+y?1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN(0?x?1; 0?y?1; 0?x+y?1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the closed loop network defect accumulating region H, growing epitaxial upper layers B selectively on the low defect density regions ZY, harmonizing outlines and insides of device chips composed of the upper layers B with the defect accumulating region H and the low defect density regions ZY respectively, forming upper electrodes on the upper layers B or not forming the electrodes, dissolving bottom parts of the upper layers B by laser irradiation or mechanical bombardment, and separating the upper layer parts B as device chips C from each other and from the substrate S. Chip-separation is done instantly by the high power laser irradiation or mechanical shock without cutting the substrate S.

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate, along streets for sectioning the plurality of devices, comprising a first trip blocking groove forming step for activating a first laser beam application means to form a blocking groove for dividing the laminate along a street of the wafer while moving the chuck table in a first direction in the processing-feed direction; a second trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street next to the street which has undergone the first trip blocking groove forming step and also to form a dividing groove along the blocking groove formed by the first trip blocking groove forming step while moving the chuck table in a second direction in the processing-feed direction; and a first trip blocking groove and

Abstract: A semiconductor device includes a substrate, a seal layer which seals a semiconductor element formed on the substrate, wherein a side surface of the seal layer is positioned inside of a side surface of the substrate.

Abstract: Processed traces are formed on at least a part of intended cutting lines A along which a wafer (10) where a nitride semiconductor lamination portion (6) is formed on a GaN based substrate (1) is divided into chips, by irradiating with a laser beam LB having a wavelength which is longer than the band gap wavelength of the GaN based substrate 1 and an electrical field intensity which causes a multiple photons absorption, while adjusting the focal point to a constant depth d within the GaN based substrate (1) from the back surface of the wafer. After that, the wafer (10) is divided into chips along cutting starting points (12) which are formed in the vicinity of the processed traces by hitting with an impact. As a result, the wafer can be easily divided into chips, and in particular, end faces of a resonator can be formed with cleavage planes when an LD is formed.

Abstract: A method, system and scan lens for use therein are provided for high-speed, laser-based, precise laser trimming at least one electrical element along a trim path. The method includes generating a pulsed laser output with a laser, the output having one or more laser pulses at a repetition rate. A fast rise/fall time, pulse-shaped q-switched laser or an ultra-fast laser may be used. Beam shaping optics may be used to generate a flat-top beam profile. Each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration. The wavelength is short enough to produce desired short-wavelength benefits of small spot size, tight tolerance, high absorption and reduced or eliminated heat-affected zone (HAZ) along the trim path, but not so short so as to cause microcracking. In this way, resistance drift after the trimming process is reduced.

Abstract: A method and an apparatus for forming a polycrystalline layer using laser annealing for preventing damage to the peripheral region of the substrate during laser annealing. The laser annealing comprises a shadow mask structure. When crystallizing an amorphous layer by laser annealing, the shadow mask structure shields the peripheral region of the amorphous layer from laser irradiation. A method for forming a polycrystalline layer using the laser annealing apparatus is also provided in the invention.

Abstract: A cutting method for substrates includes: preparing a substrate having a predetermined circular cut line which is set thereon; chucking the substrate on a surface of a chuck table which is rotatably provided; and cutting the substrate along the predetermined circular cut line of the substrate by rotating a disc-shaped cutting blade. In the cutting, the cutting blade is disposed beforehand laterally away from a side of the substrate in a surface direction of the substrate and is disposed beforehand at a position in a thickness direction of the substrate, the position corresponding to a cut depth by the cutting blade to the substrate. Next, the cutting blade is moved relatively from the above condition toward the substrate in a tangential direction of the substrate so as to enter from an edge of the substrate to a cutting start point of the substrate.

Abstract: A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision. This laser processing method irradiates a substrate 4 with laser light L while using a rear face 21 as a laser light entrance surface and locating a light-converging point P within the substrate 4, so as to form modified regions 71, 72, 73 within the substrate 4. Here, the HC modified region 73 is formed at a position between the segmented modified region 72 closest to the rear face 21 and the rear face 21, so as to generate a fracture 24 extending along a line to cut from the HC modified region 73 to the rear face 21.

Abstract: A laser beam is applied to an intersection area of each second street of a wafer by using a dicing apparatus to thereby form a first modified layer along the intersection area. Thereafter, the wafer is divided along each first street intersecting each second street at right angles to obtain a plurality of wafer strips. Thereafter, the laser beam is applied along the remaining area of each second street other than the intersection area to form a second modified layer along the remaining area of each second street. Thereafter, an external force is applied to each wafer strip in which the first and second modified layers have been formed along each second street, thereby dividing each wafer strip along each second street to obtain a plurality of devices.

Abstract: A laser processing method which can securely prevent particles from attaching to chips obtained by cutting a planar object is provided. When applying a stress to an object to be processed 1 through an expandable tape 23, forming materials of the object 1 (the object 1 formed with molten processed regions 13, semiconductor chips 25 obtained by cutting the object 1, particles produced from cut sections of the semiconductor chips 25, and the like) are irradiated with soft x-rays. As a consequence, the particles produced from the cut sections of the semiconductor chips 25 obtained by cutting the object 1 fall on the expandable tape 23 without dispersing randomly. This can securely prevent the particles from attaching to the semiconductor chips 25 obtained by cutting the object 1.

Abstract: A method of separating a semiconductor substrate having an implementation member attached thereon includes a dividing process for at least the implementation member on the semiconductor substrate along a separation line, a placing process for film member on a same side as the implementation member, a forming process area by irradiating a laser beam from at least one of a first side of the semiconductor substrate having the implementation member and a second side that is an opposite side of the first side of the semiconductor substrate along the separation line with a focusing point of the laser beam aligned with a substance in the semiconductor substrate and severing/removing at least one semiconductor chip at the separation line from the semiconductor substrate.

Abstract: A method of dividing a wafer along a plurality of first dividing lines and a plurality of second dividing lines intersecting with the first dividing lines on the surface of the wafer. The method includes an internal deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer along both the first dividing lines and the second dividing lines by applying a laser beam along the first dividing lines and the second dividing lines. It also includes an intersection deteriorated layer forming step for forming a deteriorated layer thicker than the deteriorated layer formed in the internal deteriorated layer forming step by applying a laser beam to intersection areas between the first and second dividing lines. Thereafter, a dividing step divides the wafer into individual chips along the first and second dividing lines by exertion of external force to the wafer.

Abstract: Method of inhibiting metal diffusion arising from laser dicing is provided. The method includes dividing a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the method exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment includes a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch may be performed on the chip.

Abstract: A method of forming a backside protection film includes forming a first coating layer on a first heterogeneous film, the first coating layer being at a C-stage state, forming a second coating layer on a second heterogeneous film, the second coating layer being at a B-stage state, separating the first coating layer from the first heterogeneous film, and attaching the first coating layer to the second coating layer, the second coating layer being between the second heterogeneous film and the first coating layer, and each of the first and second heterogeneous films being formed by coating a first material layer with a second material.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Abstract: First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.

Abstract: A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface and test metal patterns which are formed on the streets, having a metal pattern breaking step for forming a break line in the test metal patterns by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set near the test metal patterns; a deteriorated layer forming step for forming a deteriorated layer along the streets above the break lines in the inside of the wafer by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position above the break lines in the inside of the wafer; and a dividing step.

Abstract: Disclosed herein is a laser processing method for a wafer having a plurality of regions defined by streets, with the regions having a plurality of devices formed therein. The method irradiates the wafer with a laser beam along the streets, thereby forming laser processed grooves along the streets. It includes a processed groove formation step of irradiating the wafer while positioning the beam's focus spot on an irradiation surface of the wafer, thereby forming the laser processed grooves; and a processed groove finishing step of irradiating the wafer along the laser processed grooves formed by the processed groove formation step, while positioning the focus spot beyond the bottom of the laser processed grooves, thereby finishing both sides of the laser processed grooves.

Abstract: A method of carrying out laser processing on a wafer having a plurality of parallel streets on the front surface along the streets, comprising the steps of: carrying out a first laser processing step of carrying out laser processing along streets formed in one half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on one side in the indexing-feed direction of the wafer right below a condenser and an indexing-feed step for positioning a street adjacent to the street which has undergone the laser beam application step on the wafer right below the condenser sequentially; and carrying out a second laser processing step of carrying out laser processing along streets formed in the other half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on the other side in the indexing-feed direction of the wafer which has undergone the fi

Abstract: A method of dividing a wafer includes: a denatured layer forming step of forming a denatured layer in the inside of the wafer along streets; a first feeding step in which the whole area of the wafer's back-side surface is suction held, and the wafer is mounted on a support base of a tape adhering unit, with the wafer's back-side surface on the upper side; a dicing tape adhering step of adhering a dicing tape to the wafer's back-side surface and an annular frame; a wafer reversing step of reversing the wafer and the annular frame face side back; a second feeding step of feeding said wafer and said annular frame to a tape expanding unit whole holding them by suction; a protective tape peeling step of peeling off a protective tape adhered to the wafer's face-side surface; and a wafer dividing step of expanding the dicing tape so as to divide the wafer along the streets along which the denatured layer has been formed.

Abstract: A method of manufacturing a semiconductor device by which a wafer with devices formed in a plurality of regions demarcated by a plurality of streets formed in a grid pattern in the face-side surface of the wafer is divided along the streets into individual devices, and an adhesive film for die bonding is attached to the back-side surface of each of the devices. The adhesive film is attached to the back-side surface of the wafer divided into individual devices by exposing cut grooves formed along the streets by a dicing-before-grinding method, and thereafter the adhesive film is irradiated with a laser beam along the cut grooves through the cut grooves from the side of a protective tape adhered to the face-side surface of the wafer, so as to fusion-cut the adhesive film along the cut grooves.

Abstract: One air gap structure is disposed so as to circle around the outer wall of a seal ring in a loop by arranging, within first insulating films located in a chip outer area corresponding to an outer area of the seal ring, air gaps into a line in parallel to the seal ring, which air gaps are hermetically-closed holes that are provided respectively in wiring layers other than portions corresponding to a global wiring layer and are extended in the thickness direction of first insulating films. When a crack occurs at a chip peripheral edge due to dicing or the like, the advancing direction thereof is changed by the air gaps to an upward direction, thereafter the crack advances toward the uppermost position in the chip outer area along the extending direction of the one air gap structure, so that the crack cannot reach the seal ring.

Abstract: A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 ?m to 525 ?m. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 ?m to 525 ?m, whereby particles are hard to occur.

Abstract: In a method for laterally dividing a semiconductor wafer (1), a growth substrate (2) is provided, onto which is grown a semiconductor layer sequence (3) comprising a layer provided as a separating layer (4) and at least one functional semiconductor layer (5) which succeeds the separating layer (4) in the growth direction. Afterward, ions are implanted into the separating layer (4) through the functional semiconductor layer (5), and the semiconductor wafer is divided along the separating layer (4), a part (1a) of the semiconductor wafer (1) which contains the growth substrate (2) being separated.

Abstract: AlxInyGa1-x-yN (0?x?1; 0?x?1; 0?x+y?1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN (0?x?1; 0?y?1; 0?x+y?1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the closed loop network defect accumulating region H, growing epitaxial upper layers B selectively on the low defect density regions ZY, harmonizing outlines and insides of device chips composed of the upper layers B with the defect accumulating region H and the low defect density regions ZY respectively, forming upper electrodes on the upper layers B or not forming the electrodes, dissolving bottom parts of the upper layers B by laser irradiation or mechanical bombardment, and separating the upper layer parts B as device chips C from each other and from the substrate S.

Abstract: A wafer laser processing method for forming a deteriorated layer along streets in the inside of a wafer having streets formed in a lattice pattern on the front surface, the method comprising: an undulation area deteriorated layer forming step for applying a laser beam along the streets to the undulating area of the wafer without activating the focal point position adjustment means to form a deteriorated layer along the streets in the inside of the undulating area of the wafer; and a stable holding area deteriorated layer forming step for applying a laser beam along the streets to a stable holding area other than the undulating area of the wafer while the focal point position adjustment means is controlled based on a detection signal from the height position detection means to form a deteriorated layer along the streets in the inside of the stable holding area of the wafer.

Abstract: An object cutting method which can reliably remove particles remaining on cut sections of chips is provided. An expandable tape 23 is electrically charged in a state where a plurality of semiconductor chips 25 obtained by cutting a planar object to be processed along a line to cut are separated from each other on the expandable tape 23. This electric action causes particles remaining on cut sections of the semiconductor chips 25 to eject therefrom even when a molten processed region is formed in the cut sections Therefore, particles remaining on the cut sections of the chips 25 can reliably be removed.

Abstract: A device such as an MEMS device is fabricated by cutting a laminate of a semiconductor substrate and a glass substrate. Grooves are formed in the glass substrate, and the semiconductor substrate and the glass substrate are laminated together such that the groove faces the semiconductor substrate. The laminated substrates are irradiated with a laser along the groove from the side of the glass substrate. In this way, the laminate is cut into elements.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device, which is flexible and superiority in physical strength. As a method for manufacturing a semiconductor device, an element layer including a plurality of integrated circuits is formed over one surface of a substrate; a hole having curvature is formed in part of one surface side of the substrate; the substrate is thinned (for example, the other surface of the substrate is ground and polished); and the substrate is cut off so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed; whereby a laminated body including an integrated circuit is formed. Further, a thickness of the substrate, which is polished, is 2 ?m or more and 50 ?m or less.

Abstract: A laser processing method is provided, which, when cutting an object to be processed comprising a substrate and a multilayer part, formed on a front face of the substrate, including a functional device, can cut the multilayer part with a high precision in particular. In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

Abstract: A method of dividing a wafer having devices formed in a plurality of areas sectioned by a plurality of dividing lines, into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer by applying a laser beam of a wavelength having permeability for the wafer along the dividing lines; a wafer supporting step for putting the rear surface of the wafer on the surface of an adhesive tape which is mounted on an annular frame and whose adhesive strength is reduced by applying ultraviolet radiation thereto; and a chips-spacing forming step for reducing the adhesive strength of the adhesive tape and shrinking a shrink area between the inner periphery of the annular frame and the area to which the wafer has been affixed, of the adhesive tape by applying ultraviolet radiation to the adhesive tape to which the wafer has been affixed so as to divide the wafer into individual chips along the dividing lines where the deteriorated layer has been formed and widen th

Abstract: A method for dicing a wafer including first and second layers is provided. A front surface of the first layer contacts a backside surface of the second layer. The method includes: forming a sealing film on the second layer; cutting the first layer from a backside surface along with a cutting line to form a notch; removing the sealing film; irradiating a laser beam on the front surface of the second layer along with the cutting line to form a reforming region in the second layer by a multi photon absorption effect; and dividing the wafer along with the cutting line from the reforming region as a starting point of dividing.

Abstract: A method of manufacturing a functional film by which a functional film formed on a film formation substrate can be easily peeled from the film formation substrate. The method includes the steps of: (a) forming an electromagnetic wave absorbing layer on a substrate by using a material which absorbs an electromagnetic wave to generate heat; (b) forming a separation layer on the electromagnetic wave absorbing layer by using an inorganic material which is decomposed to generate a gas by being heated; (c) forming a layer to be peeled containing a functional film; and (d) applying the electromagnetic wave toward the electromagnetic wave absorbing layer so as to peel the layer to be peeled from the substrate or reduce bonding strength between the layer to be peeled and the substrate.

Abstract: Process for producing a multilayer structure that includes, within the depth thereof, a separating layer, including: producing an initial multilayer structure comprising a base substrate, a surface substrate and, between the base substrate and the surface substrate, an absorbent layer that can absorb a light power flux in at least one zone and a liquefiable intermediate layer that includes, in at least one zone, impurities having a coefficient of segregation relative to the material constituting this intermediate layer of less than unity; and in subjecting, for a defined time and in the form of at least one pulse, said initial structure to said light power flux, this flux being regulated so as to liquefy at least one portion of said intermediate layer under the effect of the propagation of the thermal energy, in such a way that it results, thanks to the initial presence of said impurities, in a modification of at least one characteristic and/or of at least one property of said intermediate layer arising from

Abstract: A device such as an MEMS device is fabricated by cutting a laminate of a semiconductor substrate and a glass substrate. Grooves are formed in the glass substrate, and the semiconductor substrate and the glass substrate are laminated together such that the groove faces the semiconductor substrate. The laminated substrates are irradiated with a laser along the groove from the side of the glass substrate to cut the laminate into elements.

Abstract: A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles provided at a first implant angle generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature.

Abstract: The present invention relates to a method of cutting PCB module using a laser. The method includes steps of: providing a coverlay film, the coverlay film including at least one opening defined therein; attaching the coverlay film onto the PCB module such that the through holes of the PCB module are covered by the coverlay film and the laser cutting area thereof is exposed via the at least one opening; applying a laser beam to the exposed laser cutting area of the PCB module to cutt the PCB module; and removing the coverlay film. A high positioning precision of the PCB module and better cutting result can be obtained.

Abstract: A system predicts die loss for a semiconductor wafer by using a method referred to as universal in-line metric (UILM). A wafer inspection tool detects defects on the wafer and identifies the defects by various defect types. The UILM method applies to various ways of classification of the defect types and takes into account the impact of each defect type on the die loss.

Abstract: According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

Abstract: A wafer working method is provided which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking up the wafer. The wafer working method comprises: a first machining step of grinding a reverse side of a wafer W and then polishing the reverse side of the wafer thus ground to a thickness T2 which is larger than a finally worked wafer thickness T1 by 50 ?m to 150 ?m; a modified region forming step of irradiating laser light to the wafer thus subjected to the first machining to form a modified region inside the wafer; and a second machining step of grinding the reverse side of the wafer thus formed with the modified region and then polishing the reverse side of the wafer thus ground to the finally worked wafer thickness T1.

Abstract: A wafer working method is provided which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking up the wafer. The wafer working method comprises: a first machining step of grinding a reverse side of a wafer W and then polishing the reverse side of the wafer thus ground to a thickness T2 which is larger than a finally worked wafer thickness T1; a modified region forming step of irradiating laser light to a region of the wafer thus subjected to the first machining which lies inwardly of a modification-free zone measuring 0.1 mm to 10 mm from a periphery of the wafer, to form a modified region inside the wafer; and a second machining step of grinding the reverse side of the wafer thus formed with the modified region and then polishing the reverse side of the wafer thus ground to the finally worked wafer thickness T1.

Abstract: A laser processing apparatus comprising a chuck table, laser beam irradiation means for irradiating a workpiece held on the chuck table with a laser beam, and processing feed means for processing-feeding the chuck table and the laser beam irradiation means relative to each other. The laser beam irradiation means includes first laser beam irradiation means for throwing a first pulsed laser beam having a wavelength in the intermediate-infrared radiation region, and second laser beam irradiation means for throwing a second pulsed laser beam having a wavelength in the ultraviolet radiation region. The first laser beam irradiation means and the second laser beam irradiation means are set such that at least a part, in the processing feed direction, of the focus spot of the second pulsed laser beam overlaps the focus spot of the first pulsed laser beam.

Abstract: A laser beam machining method for a wafer, wherein an operation of irradiating the inside of a wafer with a laser beam L along each of planned dividing lines is repeated a plural number of times from a position proximate to a back-side surface of the wafer toward a face-side surface of the wafer so that a plurality of composite layers each including a denatured layer and a cracked layer extending from the denatured layer toward the face-side surface are formed stepwise at intervals (first laser beam irradiation step). Subsequently, each of some of non-cracked layers between the composite layers is irradiated with the laser beam L so as to extend the cracked layer of a given one of the composite layers and to cause the cracked layer to reach the denatured layer of the composite layer which is adjacent to the given one composite layer. The denatured layers and the cracked layers which are sufficient for enabling the wafer to be split are formed by a reduced number of laser beam irradiation operations.

Abstract: A laser-based method and system for processing targeted surface material and article produced thereby are provided. The system processes the targeted surface material within a region of a workpiece while avoiding undesirable changes to adjacent non-targeted material. The system includes a primary laser subsystem including a primary laser source for generating a pulsed laser output including at least one pulse having a wavelength and a pulse width less than 1 ns. A delivery subsystem irradiates the targeted surface material of the workpiece with the pulsed laser output including the at least one pulse to texture the targeted surface material. The pulsed laser output has sufficient total fluence to initiate ablation within at least a portion of the targeted surface material and the pulse width is short enough such that the region and the non-targeted material surrounding the material are substantially free of slag.