Abstract: A wafer-cutting process includes first cutting a semiconductive wafer along a first path at a given first cutting intensity including cutting across an intersection. The process also includes second cutting the semiconductive wafer along a second path at a given second cutting intensity. The second cutting intensity is diminished during crossing the intersection and resumed to the given cutting intensity after crossing the intersection.

Abstract: A laser processing method which can securely prevent particles from attaching to chips obtained by cutting a planar object is provided. When applying a stress to an object to be processed 1 through an expandable tape 23, forming materials of the object 1 (the object 1 formed with molten processed regions 13, semiconductor chips 25 obtained by cutting the object 1, particles produced from cut sections of the semiconductor chips 25, and the like) are irradiated with soft x-rays. As a consequence, the particles produced from the cut sections of the semiconductor chips 25 obtained by cutting the object 1 fall on the expandable tape 23 without dispersing randomly. This can securely prevent the particles from attaching to the semiconductor chips 25 obtained by cutting the object 1.

Abstract: A laser processing method for a gallium arsenide wafer of radiating a laser beam along streets formed in lattice on a surface of a gallium arsenide substrate, and cutting-off the gallium arsenide wafer along the streets includes a wafer supporting step for sticking a rear surface of the gallium arsenide substrate on a protective member, a debris shielding coating step for coating the surface of the gallium arsenide substrate with a debris shielding film, a laser-processed trench forming step for radiating a laser beam along the streets from the debris shielding film side to the gallium arsenide substrate, thereby forming laser-processed trenches each not reaching the rear surface, and a cutting-off step for radiating the laser beam along the laser-processed trenches to the gallium arsenide substrate, thereby forming cutting-off trenches each reaching the rear surface.

Abstract: A method of fabricating a memory cell comprises forming a plurality of doped semiconductor layers on a carrier substrate. The method further comprises forming a plurality of digit lines separated by an insulating material. The digit lines are arrayed over the doped semiconductor layers. The method further comprises etching a plurality of trenches into the doped semiconductor layers. The method further comprises depositing an insulating material into the plurality of trenches to form a plurality of electrically isolated transistor pillars. The method further comprises bonding at least a portion of the structure formed on the carrier substrate to a host substrate. The method further comprises separating the carrier substrate from the host substrate.

Abstract: A substrate is diced using a program-controlled pulsed laser beam apparatus having an associated memory for storing a laser cutting strategy file. The file contains selected combinations of pulse rate Deltat, pulse energy density E and pulse spatial overlap to machine a single layer or different types of material in different layers of the substrate while restricting damage to the layers and maximising machining rate to produce die having predetermined die strength and yield. The file also contains data relating to the number of scans necessary using a selected combination to cut through a corresponding layer. The substrate is diced using the selected combinations. Gas handling equipment for inert or active gas may be provided for preventing or inducing chemical reactions at the substrate prior to, during or after dicing.

Abstract: Reduction of damage to a semiconductor device due to a marking process while inhibiting deterioration of a mark can not be achieved in conventional processes for manufacturing semiconductor devices. A process for manufacturing the semiconductor device 100 involves irradiating the marking film 21 with an energy beam through the transparent protective film 31 after the protective film 31 is formed, and such irradiation causes a chemical modification of the material of the marking film 21 to create the marks. According to the above-described process for manufacturing the semiconductor device 100, the region for the marking or the upper surface of the marking film 21 is sheathed by the protective film 31, so that a damage to the semiconductor chip 11 due to the generations of dust, exothermic heat, gas, stress or the like during the marking operation can be reduced. This allows achieving the process for manufacturing the semiconductor device 100 that provides a manufacture of better quality of the marks.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid

Abstract: Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate. In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate.

Abstract: An adhesive sheet for laser dicing is used for dicing a workpiece into individual chips by light absorption ablation of laser beam and has at least an adhesive layer on one side of a base material which has a surface opposite to the adhesive layer having no convex parts of width (W) of 20 mm or less and height (h) of 1 ?m or more, or no concave parts of width (W) of 20 mm or less and depth (d) of 1 ?m or more.

Abstract: An object is to provide a semiconductor chip manufacturing method capable of removing test patterns in a higher efficiency in simple steps, while a general-purpose characteristic can be secured. In a method in which a semiconductor wafer 1 having integrated circuits 3 formed in a plurality of chip regions and test patterns 4 formed in scribe lines 2a is divided by a plasma etching process so as to manufacture individual semiconductor chips, laser light 5a is irradiated from the side of a circuit forming plane 1a so as to remove the test patterns 4; and thereafter, under such a condition that a circuit protection seat 6 is adhered onto a circuit forming plane 1a, a rear plane of the circuit forming plane 1a is mechanically thinned; a mask-purpose seat is adhered onto the rear plane 1b of the semiconductor wafer 1 after the plane thinning process; and then, a plasma dicing-purpose mask is work-processed by irradiating laser light.

Abstract: A wafer laser processing method for forming a groove in a wafer having a plurality of areas which are sectioned by streets formed in a lattice pattern on the front surface of a substrate, a device being formed in each of the plurality of areas, and an insulating film being formed on the surfaces of the devices, by applying a pulse laser beam along the streets, the method comprising a heating step for applying a first pulse laser beam set to an output for preheating the insulating film so as to soften it to the insulating film and a processing step for applying a second pulse laser beam set to an output for processing the insulating film and the substrate to the spot position of the first pulse laser beam applied in the heating step, the heating step and the processing step being carried out along the streets alternately.

Abstract: After a film layer 6 formed from a die attach film 4 and a UV tape 5 has been provided as a mask on a semiconductor wafer 1, boundary trenches 7 for partitioning semiconductor elements 2 formed on a circuit pattern formation surface 1a are formed in the film layer 6, thereby making a surface 1c of a semiconductor wafer 1 exposed. The exposed surface 1c of the semiconductor wafer 1 in the boundary trenches 7 is etched by means of plasma of a fluorine-based gas, and the semiconductor wafer 1 is sliced into semiconductor chips 1? along the boundary trenches 7.

Abstract: In a manufacturing process of a semiconductor device, a manufacturing technique of a semiconductor device by which a lithography step that uses a photoresist is simplified is provided. A manufacturing cost is reduced and throughput is improved. An irradiation object is formed over a substrate by sequentially stacking a first material layer and a second material layer. The irradiation object is irradiated with a first laser beam that is absorbed by the first material layer and a second laser beam that is absorbed by the second material layer so that the laser beams overlap. A part or all of the region irradiated with an overlap part of the laser beams is ablated to form an opening.

Abstract: A method for cutting a substrate is disclosed which uses a femtosecond laser capable of preventing thermal expansion and generation of shock waves from occurring around a region where a cutting process is carried out when the femtosecond laser is used to cut the substrate, thereby being capable of achieving a reduction in costs. The method includes the steps of arranging the substrate on a stage, and irradiating a femtosecond laser to a predetermined portion of the substrate arranged on the stage, thereby cutting the substrate along the predetermined substrate portion.

Abstract: A method for positioning a dicing line includes the steps of: bonding an adhesive tape on a semiconductor layer of a wafer; detecting an image of the wafer by an imaging device on the basis of a light transmitted through the wafer; and determining the dicing line of the wafer on the basis of a position of an image of a marker, which is disposed on the semiconductor layer of the wafer. The image of the marker is obtained by image recognition from the detected image of the wafer.

Abstract: A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate.

Abstract: A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.

Abstract: A laser beam is applied to an interior of a wafer through a top surface to form modified areas in a plurality of layers of modified area groups. Intervals of the modified areas in one of the layers of modified area groups differ from intervals of the modified areas in another one of the layers of the modified area groups, which is closer to the top surface of the wafer in comparison to the one of the layers of the modified area groups.

Abstract: An object to be processed can be cut highly accurately along a line to cut. An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

Abstract: A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2; an electrode pad 5 formed along the edge of the semiconductor chip area 2; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32, the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.

Abstract: The present invention discloses a laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

Abstract: In a semiconductor substrate 1, a plurality of semiconductor elements 2 having diaphragm structures are formed in the form of cells in the longitudinal direction and the lateral direction, and V-grooves 3 are formed by anisotropic etching continuously on only division lines 4 parallel formed in one direction, out of the division lines 4 which are orthogonal to each other and divide the respective semiconductor elements 2 individually.

Abstract: A laser processing method which can securely prevent particles from attaching to chips obtained by cutting a planar object is provided. When applying a stress to an object to be processed 1 through an expandable tape 23, forming materials of the object 1 (the object 1 formed with molten processed regions 13, semiconductor chips 25 obtained by cutting the object 1, particles produced from cut sections of the semiconductor chips 25, and the like) are irradiated with soft x-rays. As a consequence, the particles produced from the cut sections of the semiconductor chips 25 obtained by cutting the object 1 fall on the expandable tape 23 without dispersing randomly. This can securely prevent the particles from attaching to the semiconductor chips 25 obtained by cutting the object 1.

Abstract: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

Abstract: A dividing method for an optical device wafer includes a protective plate adhering step of releasably adhering the surface of an optical device wafer to the surface of a protective plate, a reverse face grinding step of grinding the reverse face of the optical device wafer, a dicing tape sticking step of sticking the reverse face of the optical device wafer on the surface of a dicing tape, a protective plate grinding step of grinding the reverse face of the protective plate adhered to the optical device wafer stuck on the dicing tape so as to have a predetermined thickness, a laser working step of irradiating a laser beam upon the protective plate along the streets formed on the optical device wafer to carry out laser working, which forms break starting points along the streets, for the protective plate, and a wafer dividing step of applying external force to the protective plate to break the protective plate along the break starting points to break the optical device wafer along the streets thereby to divide

Abstract: The present invention relates to a method for processing with a laser beam and cleaning electronic components, wherein at least one new boundary surface is formed on an electronic component with the laser beam. The invention also relates to a device for processing and cleaning electronic components, comprising at least: a laser source for generating a laser beam, and at least one carrier for supporting an assembly of unseparated electronic components, wherein the carrier and the laser beam are displaceable relative to each other.

Abstract: An embodiment is a method and apparatus to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern.

Abstract: A semiconductor wafer includes a plurality of predetermined separation lines extending from an upper surface to a bottom surface; and a semiconductor substrate including a plurality of chip regions segmented by the predetermined separation lines. Tensile stress is applied to regions of the semiconductor substrate provided with the predetermined separation lines.

Abstract: A method of dividing a wafer having a plurality of areas defined by the plurality of streets formed in a lattice on the front surface, devices formed in the defined areas and an adhesive film for die bonding on the rear surface and put on a dicing tape affixed to an annular frame along the streets, the method comprising the steps of: forming a groove along the streets in the wafer by applying a first laser beam whose elliptic focal spot has a ratio of the long axis of the short axis of 15 to 20:1 along the streets formed on the wafer; and dividing the adhesive film along the grooves by applying a second laser beam whose elliptical focal spot has a ratio of the long axis to the short axis of 60 to 70:1 to the adhesive film through the grooves formed by the wafer dividing step.

Abstract: In a stealth dicing process for a semiconductor device with a low dielectric constant layer, the occurrence of poor appearance such as a defective shape or discoloration in the layer is reduced or prevented as follows. A low dielectric constant layer is formed in an interlayer insulating layer formed on the main surface of a semiconductor wafer. A laser beam is focused on the inside of the wafer from the reverse side of the wafer in order to form modified regions selectively. Each modified region is formed in a way to contact, or partially get into, the low dielectric constant layer. In this formation process, the semiconductor wafer is cooled by a cooling element. This reduces or prevents discoloration of the low dielectric constant layer which might occur due to the heat of a laser beam.

Abstract: An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.

Abstract: A semiconductor device including a plurality of circuit regions formed in a semiconductor substrate and a scribe region formed around the circuit regions for separating the respective circuit regions, the scribe region having a plurality of laminated interlayer films including a plurality of metal films and an optically-transparent insulation film formed between and on the plurality of metal films, wherein a first metal film included in a first upper interlayer film of the plurality of interlayer films is positionally offset in a vertical direction to a second metal film included in a second lower interlayer film under the first interlayer film.

Abstract: The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck in a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the chuck; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Abstract: A method for forming a median crack and an apparatus for forming a median crack are provided, where the formation of a deep, straight median crack is possible, and an excellent broken surface of a brittle substrate can be gained as a result of breaking.

Abstract: A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates though a portion of said metal support that remains where the first divining groove is formed.

Abstract: A process applied to grinding, dicing, and/or stacking semiconductors is disclosed. One of its features is that after transparent material is stuck on its active surface, a semiconductor is ground from another surface thereof to become thinner, then take advantage of transparency of the transparent material to cut the transparent material and the semiconductor, to obtain at least one smaller semiconductor unit such as die or chip. Another feature is that the transparent material remains sticking to the active surface of the die by an adhesion layer until the die is attached to a carrier or another die, and then the transparent material and the adhesion layer are removed by taking advantage of a function of the adhesion layer: receiving a ray to lose adhesion between it and the active surface. Preferably the ray reaches the adhesion layer via the transparent material stuck on the active surface of the die.

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate having a front surface where a circuit pattern is formed and a back surface opposite to the front surface, reading information of the circuit pattern formed at the front surface of the substrate over the back surface through the substrate by an image pickup member, forming a cutting part at the back surface of the substrate, grinding the back surface to form a portion of the cutting part as a dicing line, attaching an expanding tape to the back surface where the dicing line is formed, and expanding the expanding tape to separate the substrate into a plurality of chips along the dicing line.

Abstract: A laser processing method by which an object to be processed can be cut with a high precision is provided. The laser processing method of the present invention irradiates a planar object to be processed 1 with laser light L while locating a light-converging point P within the object 1. Initially, a first modified region 71 to become a start point for cutting is formed along a first line to cut 5a in the object 1. Subsequently, along a second line to cut 5b intersecting the line to cut 5a, a second modified region 72 to become a start point for cutting is formed so as to intersect at least a part of the modified region 71. Then, a fourth modified region 73 to become a start point for cutting is formed along the line to cut 5b. Thereafter, between the modified region 71 and an entrance face 1a of the object 1 where the laser light L is incident, a third modified region 74 to become a start point for cutting is formed along the line to cut 5a so as to intersect at least a part of the modified region 73.

Abstract: A method of laser machining a feature in a substrate includes machining the substrate with a pulsed laser along a scan line so that the successive pulses 81 at the substrate do not overlap but are either contiguous or spaced apart. Pulses 82, 83, 84 in respective succeeding scans of the laser along the scan line, are offset with respect to the starting point of pulses 81, 82, 83 in a previous scan so that multiple successive laser scans provide machining to a required depth while successively smoothing edges, 91, 92, 93, 94 of the feature with each pass.

Abstract: The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Abstract: The inventive production method of a compound semiconductor light-emitting device (LED)s wafer comprises a step of forming a protective film on the top and/or bottom surface of a compound semiconductor LEDs wafer, where the devices being regularly and periodically arranged with separation zones being disposed; a step of forming separation grooves by means of laser processing in the separation zones of the surface on which the protective film is formed, while a gas is blown onto a laser-irradiated portion; and a step of removing at least a portion of the protective film, which steps are performed in the above sequence.

Abstract: The present invention is to provide a semiconductor laser device manufacturing method for realizing highly reliable semiconductor laser devices. The semiconductor laser device manufacturing method includes: cutting a wafer into bar-shaped wafers by scanning an electron beam on the front side of the wafer on which a semiconductor laser structure has been formed so as to cause cracks which trigger the cutting of the wafer; and depositing front and back coating films on the end faces, which have been newly exposed by the cutting of the wafer, of the cut wafers. In the method the cut wafers are transferred in a non-ambient atmosphere at a time between the cutting of the wafer and the depositing of the end face coating films.

Abstract: An integrated circuit package system that includes: providing a substrate with a protective coating; attaching a labeling film to a support member in a separate process; joining the protective coating and the labeling film; and dicing the substrate, the protective coating, and the labeling film to form the integrated circuit package system.

Abstract: Disclosed herein is a method of dividing a wafer having a plurality of streets which are formed in a lattice pattern on the front surface and having devices which are formed in a plurality of areas sectioned by the plurality of streets into individual devices along the streets. The method includes applying a laser beam of a wavelength having permeability for the wafer along the streets to form a deteriorated layer along the streets in the inside of the wafer; forming a groove in areas corresponding to the streets from the rear side of the wafer; and exerting external force to the wafer where the deteriorated layer and the groove have been formed along the streets to divide the wafer into individual devices along the streets.

Abstract: A method for breaking an adhesive film mounted on the back of a wafer having a plurality of streets formed in a lattice pattern on the face of the wafer, and having devices formed in a plurality of regions demarcated by the plurality of streets, the devices being divided individually, is adapted to break the adhesive film along the outer peripheral edges of the individual devices, with the adhesive film being stuck to the surface of a dicing tape mounted on an annular frame. The method comprises: a laser processing step of projecting a laser beam with a pulse width of 100 picoseconds or less onto the adhesive film through gaps between the individually divided devices to form deteriorated layers in the adhesive film along the outer peripheral edges of the individual devices; and an adhesive film breaking step of exerting external force on the adhesive film having the deteriorated layers formed therein, to break the adhesive film along the deteriorated layers.

Abstract: A method for manufacturing a vertical light-emitting diode is described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.

Abstract: A method of dividing a wafer having a plurality of streets, which are formed in a lattice pattern on the front surface, and having devices, which are formed in a plurality of areas sectioned by the plurality of streets, into individual devices along the streets, comprising: a protective member-affixing step for affixing a protective member for protecting devices onto the front surface of the wafer; a deteriorated layer-forming step for applying a laser beam of a wavelength having permeability for the wafer from the rear surface side of the wafer along the streets to form a deteriorated layer along the streets in an area where it does not reach the final thickness of each device from the front surface of the wafer and the rear surface of the wafer in the inside of the wafer; a groove-forming step for cutting areas corresponding to the streets from the rear surface side of the wafer where the deteriorated layer has been formed along the streets to form a groove reaching the deteriorated layer; a dividing the wa

Abstract: Methods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.